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Journal articles on the topic 'Quantum nanostructures'

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Author: Grafiati

Published: 9 March 2023

Last updated: 11 March 2023

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1

Aseev, Aleksander Leonidovich, Alexander Vasilevich Latyshev, and Anatoliy Vasilevich Dvurechenskii. "Semiconductor Nanostructures for Modern Electronics." Solid State Phenomena 310 (September 2020): 65–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.65.

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Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light-emitting devices, sensors and photovoltaic cells. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing of energy band structure, quantization of energy spectrum of a charge carrier and a pronounced spin-related phenomena. Superposition of quantum states and formation of entangled states of photons offers new opportunities for the realization of quantum bits, development of nanoscale systems for quantum cryptography and quantum computing. Advanced growth techniques such as molecular beam epitaxy and chemical vapour epitaxy, atomic layer deposition as well as optical, electron and probe nanolithography for nanostructure fabrication have been widely used. Nanostructure characterization is performed using nanometer resolution tools including high-resolution, reflection and scanning electron microscopy as well as scanning tunneling and atomic force microscopy. Quantum properties of semiconductor nanostructures have been evaluated from precise electrical and optical measurements. Modern concepts of various semiconductor devices in electronics and photonics including single-photon emitters, memory elements, photodetectors and highly sensitive biosensors are developed very intensively. The perspectives of nanostructured materials for the creation of a new generation of universal memory and neuromorphic computing elements are under lively discussion. This paper is devoted to a brief description of current achievements in the investigation and modeling of single-electron and single-photon phenomena in semiconductor nanostructures, as well as in the fabrication of a new generation of elements for micro-, nano, optoelectronics and quantum devices.

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2

Afshar, Elham N., Georgi Xosrovashvili, Rasoul Rouhi, and Nima E. Gorji. "Review on the application of nanostructure materials in solar cells." Modern Physics Letters B 29, no. 21 (August 10, 2015): 1550118. http://dx.doi.org/10.1142/s0217984915501183.

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In recent years, nanostructure materials have opened a promising route to future of the renewable sources, especially in the solar cells. This paper considers the advantages of nanostructure materials in improving the performance and stability of the solar cell structures. These structures have been employed for various performance/energy conversion enhancement strategies. Here, we have investigated four types of nanostructures applied in solar cells, where all of them are named as quantum solar cells. We have also discussed recent development of quantum dot nanoparticles and carbon nanotubes enabling quantum solar cells to be competitive with the conventional solar cells. Furthermore, the advantages, disadvantages and industrializing challenges of nanostructured solar cells have been investigated.

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3

Poempool, Thanavorn, Zon, Suwit Kiravittaya, Suwat Sopitpan, Supachok Thainoi, Songphol Kanjanachuchai, Somchai Ratanathamaphan, and Somsak Panyakeow. "GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties." MRS Advances 1, no. 23 (December 10, 2015): 1677–82. http://dx.doi.org/10.1557/adv.2015.6.

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ABSTRACTGaSb/GaAs and InSb/GaAs material systems can create type-II quantum nanostructures which provide interesting electronic and optical properties such as having long carrier life time, low carriers-recombination rate, and emitting/absorbing low photon energy. These characteristics of type-II nanostructures can be applied for infrared or gas detection devices, for memory devices and even for novel intermediate band solar cells. In contrast, lattice mismatches of GaSb/GaAs and InSb/GaAs material system are 7.8% and 14.6%, respectively, which need some specific molecular beam epitaxial (MBE) growth conditions for quantum nanostructure formation via Stranski–Krastanov growth mode.In this paper, the growth of self-assembled GaSb and InSb quantum nanostructures on (001) GaAs substrate by using MBE was reported. The surface morphology of these two quantum nanostructures and their optical properties were characterized by atomic force microscopy and photoluminescence (PL). The experimental results were compared between these two quantum nanostructures. Due to the lattice mismatch in each material system and the difference in sticking coefficient of Ga- and In-atoms during epitaxial growth, we obtain GaSb/GaAs quantum dots (QDs) with a density ∼1010 dots/cm2 and InSb/GaAs QDs with a density of ∼108 dots/cm2. The facet analysis of individual quantum nanostructure in each material system reveals that GaSb/GaAs QD has a dome-like shape with nearly isotropic property while InSb QDs form a rectangular-like shape with elongation along [110]-direction showing a strong anisotropic property.Low temperature PL spectra from capped GaSb and InSb quantum nanostructures show the energy peaks at 1.08-1.11 and 1.16-1.17 eV, respectively. The variations of PL peaks as a function of both temperature and excitation power are investigated. PL peak shows clear blue shift when excitation power is increased. This work manifests a possibility to use both GaSb and InSb quantum nanostructures for nanoelectronic and nanophotonic applications.

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4

Chen, Hongjun, and Lianzhou Wang. "Nanostructure sensitization of transition metal oxides for visible-light photocatalysis." Beilstein Journal of Nanotechnology 5 (May 23, 2014): 696–710. http://dx.doi.org/10.3762/bjnano.5.82.

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To better utilize the sunlight for efficient solar energy conversion, the research on visible-light active photocatalysts has recently attracted a lot of interest. The photosensitization of transition metal oxides is a promising approach for achieving effective visible-light photocatalysis. This review article primarily discusses the recent progress in the realm of a variety of nanostructured photosensitizers such as quantum dots, plasmonic metal nanostructures, and carbon nanostructures for coupling with wide-bandgap transition metal oxides to design better visible-light active photocatalysts. The underlying mechanisms of the composite photocatalysts, e.g., the light-induced charge separation and the subsequent visible-light photocatalytic reaction processes in environmental remediation and solar fuel generation fields, are also introduced. A brief outlook on the nanostructure photosensitization is also given.

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5

Paul, Neelima, Ezzeldin Metwalli, Yuan Yao, Matthias Schwartzkopf, Shun Yu, Stephan V. Roth, Peter Müller-Buschbaum, and Amitesh Paul. "Templating growth of gold nanostructures with a CdSe quantum dot array." Nanoscale 7, no. 21 (2015): 9703–14. http://dx.doi.org/10.1039/c5nr01121c.

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The controlled gold sputtering on quantum dot arrays forms gold nanostructures exclusively on top of quantum dots by self-assembly. A real time observation of the gold nanostructure growth is enabled with grazing incidence small-angle X-ray scattering (GISAXS).

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6

Vysikaylo, P. I. "Quantum Size Effects Arising from Nanocomposites Physical Doping with Nanostructures Having High Electron Affinit." Herald of the Bauman Moscow State Technical University. Series Natural Sciences, no. 3 (96) (June 2021): 150–75. http://dx.doi.org/10.18698/1812-3368-2021-3-150-175.

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This article considers main problems in application of nanostructured materials in high technologies. Theoretical development and experimental verification of methods for creating and studying the properties of physically doped materials with spatially inhomogeneous structure on micro and nanometer scale are proposed. Results of studying 11 quantum size effects exposed to nanocomposites physical doping with nanostructures with high electron affinity are presented. Theoretical and available experimental data were compared in regard to creation of nanostructured materials, including those with increased strength and wear resistance, inhomogeneous at the nanoscale and physically doped with nanostructures, i.e., quantum traps for free electrons. Solving these problems makes it possible to create new nanostructured materials, investigate their varying physical properties, design, manufacture and operate devices and instruments with new technical and functional capabilities, including those used in the nuclear industry. Nanocrystalline structures, as well as composite multiphase materials and coatings properties could be controlled by changing concentrations of the free carbon nanostructures there. It was found out that carbon nanostructures in the composite material significantly improve impact strength, microhardness, luminescence characteristics, temperature resistance and conductivity up to 10 orders of magnitude, and expand the range of such components’ possible applications in comparison with pure materials, for example, copper, aluminum, transition metal carbides, luminophores, semiconductors (thermoelectric) and silicone (siloxane, polysiloxane, organosilicon) compounds

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7

Prevenslik, Thomas. "Unphysical Heat Transfer by Molecular Dynamics." Applied Mechanics and Materials 184-185 (June 2012): 1446–50. http://dx.doi.org/10.4028/www.scientific.net/amm.184-185.1446.

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Molecular Dynamics (MD) simulations based on classical statistical mechanics allow the atom to have thermal heat capacity. Quantum mechanics (QM) differs in that the heat capacity of atoms in submicron nanostructures vanishes. Nevertheless, MD simulations of heat transfer in discrete nanostructures are routlinely performed and abound in the literature. Not only are discrete MD sumultions invalid by QM, but give unphysical results, e.g., thermal conducitvity in nanofluids is found to exceed standard mixing rules while in solid metal films depends on thickness. QM explains the unphysical results by negating the heat capacity of atoms in discrete nanostructures, thereby precluding the usual conservation of absorbed electromagnetic (EM) energy by an increase in temperature. Instead, the absorbed EM energy is conserved by QED inducing the creation of non-thermal EM radiation inside the nanostructure that by the photoelectric effect creates charge in the nanostructure, or is emitted to the surroundings. QED stands for quantum electrodynamics. Unphysical results occur because the QED induced radiation is not included in the nanoscale heat balance, but if included the physical results for discrete nanostructures are found. Examples of unphysical MD simulatons are presented.

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8

Douhan, Rahaf, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko, and Kristina Khomyakova. "Recent Advances in Si-Compatible Nanostructured Photodetectors." Technologies 11, no. 1 (January 24, 2023): 17. http://dx.doi.org/10.3390/technologies11010017.

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In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies.

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9

Henini, Mohamed. "Quantum dot nanostructures." Materials Today 5, no. 6 (June 2002): 48–53. http://dx.doi.org/10.1016/s1369-7021(02)00639-9.

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10

Piryatinski, Yuri P., Markiian B. Malynovskyi, Maryna M. Sevryukova, Anatoli B. Verbitsky, Olga A. Kapush, Aleksey G. Rozhin, and Petro M. Lutsyk. "Mixing of Excitons in Nanostructures Based on a Perylene Dye with CdTe Quantum Dots." Materials 16, no. 2 (January 6, 2023): 552. http://dx.doi.org/10.3390/ma16020552.

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Semiconductor quantum dots of the A2B6 group and organic semiconductors have been widely studied and applied in optoelectronics. This study aims to combine CdTe quantum dots and perylene-based dye molecules into advanced nanostructure system targeting to improve their functional properties. In such systems, new electronic states, a mixture of Wannier–Mott excitons with charge-transfer excitons, have appeared at the interface of CdTe quantum dots and the perylene dye. The nature of such new states has been analyzed by absorption and photoluminescence spectroscopy with picosecond time resolution. Furthermore, aggregation of perylene dye on the CdTe has been elucidated, and contribution of Förster resonant energy transfer has been observed between aggregated forms of the dye and CdTe quantum dots in the hybrid CdTe-perylene nanostructures. The studied nanostructures have strongly quenched emission of quantum dots enabling potential application of such systems in dissociative sensing.

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11

Bagraev N. T., Kukushkin S. A., Osipov A. V., Klyachkin L. E., Malyarenko A. M., and Khromov V. S. "Terahertz emission from silicon carbide nanostructures." Semiconductors 56, no. 13 (2022): 2050. http://dx.doi.org/10.21883/sc.2022.13.53897.9709.

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For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain- source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation. Keywords: silicon carbide on silicon, terahertz emission, electroluminescence, nanostructure, quantum Faraday effect.

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12

Ding, Y. H., V. Hongpinyo, Hery S. Djie, and Boon S. Ooi. "Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures." Advanced Materials Research 31 (November 2007): 182–84. http://dx.doi.org/10.4028/www.scientific.net/amr.31.182.

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Nano-scale spatial wavelength engineering of quantum nanostructures using nitrogen ion-implantation induced intermixing has been developed for tuning the bandgap of quantum-well, quantum-dash-in-well, and quantum-dot nanostructures. High performance bandgap-tuned quantum-well and quantum-dash lasers fabricated using this technique has been demonstrated.

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13

Vladimirova, Yulia V., and Victor N. Zadkov. "Quantum Optics in Nanostructures." Nanomaterials 11, no. 8 (July 26, 2021): 1919. http://dx.doi.org/10.3390/nano11081919.

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This review is devoted to the study of effects of quantum optics in nanostructures. The mechanisms by which the rates of radiative and nonradiative decay are modified are considered in the model of a two-level quantum emitter (QE) near a plasmonic nanoparticle (NP). The distributions of the intensity and polarization of the near field around an NP are analyzed, which substantially depend on the polarization of the external field and parameters of plasmon resonances of the NP. The effects of quantum optics in the system NP + QE plus external laser field are analyzed—modification of the resonance fluorescence spectrum of a QE in the near field, bunching/antibunching phenomena, quantum statistics of photons in the spectrum, formation of squeezed states of light, and quantum entangled states in these systems.

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14

Gupta, N., G. F. Alapatt, R. Podila, R. Singh, and K. F. Poole. "Prospects of Nanostructure-Based Solar Cells for Manufacturing Future Generations of Photovoltaic Modules." International Journal of Photoenergy 2009 (2009): 1–13. http://dx.doi.org/10.1155/2009/154059.

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We present a comprehensive review on prospects for one-, two-, or three-dimensional nanostructure-based solar cells for manufacturing the future generation of photovoltaic (PV) modules. Reducing heat dissipation and utilizing the unabsorbed part of the solar spectrum are the key driving forces for the development of nanostructure-based solar cells. Unrealistic assumptions involved in theoretical work and the tendency of stretching observed experimental results are the primary reasons why quantum phenomena-based nanostructures solar cells are unlikely to play a significant role in the manufacturing of future generations of PV modules. Similar to the invention of phase shift masks (to beat the conventional diffraction limit of optical lithography) clever design concepts need to be invented to take advantage of quantum-based nanostructures. Silicon-based PV manufacturing will continue to provide sustained growth of the PV industry.

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15

Rahman, Md Aziz Ar, Shukui Zhang, and Hani E. Elsayed-Ali. "Quantum efficiency enhancement in simulated nanostructured negative electron affinity GaAs photocathodes." Journal of Applied Physics 133, no. 2 (January 14, 2023): 023105. http://dx.doi.org/10.1063/5.0130884.

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Nanostructured negative electron affinity GaAs photocathodes for a polarized electron source are studied using finite difference time domain optical simulation. The structures studied are nanosquare columns, truncated nanocones, and truncated nanopyramids. Mie-type resonances in the 700–800 nm waveband, suitable for generation of polarized electrons, are identified. At resonance wavelengths, the nanostructures can absorb up to 99% of the incident light. For nanosquare columns and truncated nanocones, the maximum quantum efficiency (QE) at 780 nm obtained from simulation is 27%, whereas for simulated nanopyramids, the QE is ∼21%. The high photocathode quantum efficiency is due to the shift of Mie resonance toward the longer wavelength, leading to increased light absorption. The field profile distribution shows the excitation of dipole and quadrupole modes within the nanostructures at resonant frequencies. This leads to enhanced photoabsorption and photoelectron generation closer to emission surfaces than for a flat photocathode. The enhanced photoabsorption and reduced electron transport distance for the nanostructured photocathode enhance its QE compared to that for the flat surface wafer.

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16

Bocko, Jozef, and Pavol Lengvarský. "Application of Finite Element Method for Analysis of Nanostructures." Acta Mechanica et Automatica 11, no. 2 (June 1, 2017): 116–20. http://dx.doi.org/10.1515/ama-2017-0018.

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AbstractThe paper deals with application of the finite element method in modelling and simulation of nanostructures. The finite element model is based on beam elements with stiffness properties gained from the quantum mechanics and nonlinear spring elements with force-displacement relation are gained from Morse potential. Several basic mechanical properties of structures are computed by homogenization of nanostructure, e.g. Young's modulus, Poisson's ratio. The problems connecting with geometrical parameters of nanostructures are considered and their influences to resulting homogenized quantities are mentioned.

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17

Prevenslik, Thomas. "Validity of Molecular Dynamics Heat Transfer by Quantum Mechanics." Advanced Materials Research 829 (November 2013): 803–7. http://dx.doi.org/10.4028/www.scientific.net/amr.829.803.

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MD is commonly used in computational physics to determine the atomic response of nanostructures. MD stands for molecular dynamics. With theoretical basis in statistical mechanics, MD relates the thermal energy of the atom to its momentum by the equipartition theorem. Momenta of atoms are derived by solving Newtons equations with inter-atomic forces derived by Lennard-Jones or L-J potentials. MD implicitly assumes the atom always has heat capacity as otherwise the momenta of the atoms cannot be related to their temperature. In bulk materials, the continuum is simulated by imposing PBC on an ensemble of atoms, the atoms always having heat capacity. PBC stands for periodic boundary conditions. MD simulations of the bulk are therefore valid because atoms in the bulk do indeed have heat capacity. Nanostructures differ. Unlike the continuum, the atom confined in discrete submicron structures is precluded by QM from having the heat capacity necessary to conserve absorbed EM energy by an increase in temperature. QM stands for quantum mechanics and EM for electromagnetic. Quantum corrections of MD solutions that would show the heat capacity of nanostructures vanishes are not performed. What this means is the MD simulations of discrete nanostructures published in the literature not only have no physical meaning, but are knowingly invalid by QM. In the alternative, conservation of absorbed EM energy is proposed to proceed by the creation of QED induced non-thermal EM radiation at the TIR frequency of the nanostructure. QED stands for quantum electrodynamics and TIR for total internal reflection. QED radiation creates excitons (holon and electron pairs) that upon recombination produce EM radiation that charges the nanostructure or is lost to the surroundings a consequence only possible by QM as charge is not created in statistical mechanics. Valid and invalid MD simulations from the literature are illustrated with nanofluids and nanocars, respectively. Finally, valid and invalid MD solutions for the stiffening of NWs in tensile tests are presented to illustrate the unphysical findings if QM is ignored at the nanoscale. NW stands for nanowire.

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18

Alhalaili, Badriyah, Ahmad Al-Duweesh, Ileana Nicoleta Popescu, Ruxandra Vidu, Luige Vladareanu, and M. Saif Islam. "Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications." Sensors 22, no. 5 (March 6, 2022): 2048. http://dx.doi.org/10.3390/s22052048.

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Interest in the synthesis and fabrication of gallium oxide (Ga2O3) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their unique properties, i.e., higher surface-to-volume ratio and quantum effects, these nanostructures can significantly enhance the sensitivity of detection. In this work, two Ga2O3 nanostructured films with different nanowire densities and sizes obtained by thermal oxidation of Ga on quartz, in the presence and absence of Ag catalyst, were investigated. The electrical properties influenced by the density of Ga2O3 nanowires (NWs) were analyzed to define the configuration of UV detection. The electrical measurements were performed on two different electric contacts and were located at distances of 1 and 3 mm. Factors affecting the detection performance of Ga2O3 NWs film, such as the distance between metal contacts (1 and 3 mm apart), voltages (5–20 V) and transient photocurrents were discussed in relation to the composition and nanostructure of the Ga2O3 NWs film.

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19

Dev, B. N. "Quantum phenomena in nanostructures." Journal of Physics: Conference Series 1718 (January 2021): 012003. http://dx.doi.org/10.1088/1742-6596/1718/1/012003.

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20

Mitin, Vladimir V., Dmitry I. Sementsov, and Nizami Z. Vagidov. "Quantum mechanics for nanostructures." MRS Bulletin 37, no. 5 (May 2012): 531. http://dx.doi.org/10.1557/mrs.2012.113.

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21

Ipatova, I. P., A. Yu Maslov, and O. V. Proshina. "Polaron in quantum nanostructures." Surface Science 507-510 (June 2002): 598–602. http://dx.doi.org/10.1016/s0039-6028(02)01321-3.

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22

Bellessa, J., F. Carcenac, A. Izrael, H. Launois, and D. Mailly. "Nanostructures for quantum physics." Microelectronic Engineering 6, no. 1-4 (December 1987): 175–80. http://dx.doi.org/10.1016/0167-9317(87)90034-7.

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23

Houver, S., A. Lebreton, T. A. S. Pereira, G. Xu, R. Colombelli, I. Kundu, L. H. Li, et al. "Giant optical nonlinearity interferences in quantum structures." Science Advances 5, no. 10 (October 2019): eaaw7554. http://dx.doi.org/10.1126/sciadv.aaw7554.

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Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures. These resonant nonlinearities continually attract attention, particularly in newly discovered materials. However, they are frequently not as heightened as currently predicted, limiting their exploitation in nanostructured nonlinear optics. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant destructive, as well as constructive, interference effects in complex systems. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband nonlinearities, we show that these giant interferences are a result of an unexpected interplay of the second-order nonlinear contributions of multiple light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of nanostructures, this advanced framework can be used as a novel, sensitive tool to elucidate the band structure properties of complex materials.

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Bagraev N. T., Kukushkin S. A., Osipov A. V., Klyachkin L. E., Malyarenko A. M., and Khromov V. S. "Registration of terahertz irradiation with silicon carbide nanostructures." Semiconductors 55, no. 14 (2022): 2157. http://dx.doi.org/10.21883/sc.2022.14.53862.9620.

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The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz irradiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value. Keywords: silicon carbide on silicon, terahertz irradiation, nanostructure, electrically-detected EPR, quantum Faraday effect.

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Wei, Biao, Haijun Zhou, Guangxiang Li, and Bin Tang. "Numerical study on all-optical modulation characteristics of quantum cascade lasers." Beilstein Journal of Nanotechnology 13 (September 23, 2022): 1011–19. http://dx.doi.org/10.3762/bjnano.13.88.

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To explain the phenomenon of all-optical modulation of quantum cascade laser (QCL), and explore the physics in QCL’s gain medium which consists of multiple of dielectric nanostructures with high refractive index under light injection, we modified the 1½-period model to calculate values of electron population and lifetime in each subband which is separated by the nanostructures, optical gain, current and number of photons in the cavity of a mid-infrared QCL modulated with near-infrared optical injection. The results were consistent with an experiment, where the injected light increases the electron population and lifetime, but does not affect the optical gain obviously. Our study can be helpful for optimizing its use and dielectric nanostructure design.

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Zhang, Bo, Wenxu Xie, and Yong Xiang. "Development and Prospect of Nanoarchitectured Solar Cells." International Journal of Photoenergy 2015 (2015): 1–11. http://dx.doi.org/10.1155/2015/382389.

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This paper gives an overview of the development and prospect of nanotechnologies utilized in the solar cell applications. Even though it is not clearly pointed out, nanostructures indeed have been used in the fabrication of conventional solar cells for a long time. However, in those circumstances, only very limited benefits of nanostructures have been used to improve cell performance. During the last decade, the development of the photovoltaic device theory and nanofabrication technology enables studies of more complex nanostructured solar cells with higher conversion efficiency and lower production cost. The fundamental principles and important features of these advanced solar cell designs are systematically reviewed and summarized in this paper, with a focus on the function and role of nanostructures and the key factors affecting device performance. Among various nanostructures, special attention is given to those relying on quantum effect.

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Freik, D. M., I. K. Yurchyshyn, V. Yu Potyak, and V. M. Chobaniuk. "Quantum-Size Oscillation Effects of Thermoelectric Parameters in Lead Chalcogenides Nanostructures." Ukrainian Journal of Physics 59, no. 2 (February 2014): 167–71. http://dx.doi.org/10.15407/ujpe59.02.0167.

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Jewasuwan, W., S. Panyakeow, and S. Ratanathammaphan. "The Formation of InP Ring-Shape Nanostructures on In_0.49Ga_0.51P Grown by Droplet Epitaxy." Advanced Materials Research 31 (November 2007): 158–60. http://dx.doi.org/10.4028/www.scientific.net/amr.31.158.

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We report on the fabrication of self-assembled InP ring-shape nanostructures on In0.49Ga0.51P by droplet molecular-beam epitaxy. The dependency of InP ring-shape nanostructural properties on substrate temperature and indium deposition rate is investigated by ex situ atomic force microscope (AFM). The nano-craters are formed when indium deposition at 120°C while the ring shape quantum-dot molecules are formed when indium deposition at 150°C or higher. The size, density and pattern of InP ring-shape nanostructures strongly depend on substrate temperature and indium deposition rate during indium deposition.

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Mahler, Günter, and Rainer Wawer. "Quantum Networks: Dynamics of Open Nanostructures." VLSI Design 8, no. 1-4 (January 1, 1998): 191–96. http://dx.doi.org/10.1155/1998/28384.

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The superposition principle makes quantum networks behave very differently from their classical counterparts: We discuss how local and non-local coherence are generated and how these may affect the function of composite systems. Numerical examples concern quantum trajectories, quantum noise and quantum parallelism.

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Tadyszak, Krzysztof, Andrzej Musiał, Adam Ostrowski, and Jacek K. Wychowaniec. "Unraveling Origins of EPR Spectrum in Graphene Oxide Quantum Dots." Nanomaterials 10, no. 4 (April 21, 2020): 798. http://dx.doi.org/10.3390/nano10040798.

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Carbon nanostructures are utilized in a plethora of applications ranging from biomedicine to electronics. Particularly interesting are carbon nanostructured quantum dots that can be simultaneously used for bimodal therapies with both targeting and imaging capabilities. Here, magnetic and optical properties of graphene oxide quantum dots (GOQDs) prepared by the top-down technique from graphene oxide and obtained using the Hummers’ method were studied. Graphene oxide was ultra-sonicated, boiled in HNO3, ultra-centrifuged, and finally filtrated, reaching a mean flake size of ~30 nm with quantum dot properties. Flake size distributions were obtained from scanning electron microscopy (SEM) images after consecutive preparation steps. Energy-dispersive X-ray (EDX) confirmed that GOQDs were still oxidized after the fabrication procedure. Magnetic and photoluminescence measurements performed on the obtained GOQDs revealed their paramagnetic behavior and broad range optical photoluminescence around 500 nm, with magnetic moments of 2.41 µB. Finally, electron paramagnetic resonance (EPR) was used to separate the unforeseen contributions and typically not taken into account metal contaminations, and radicals from carbon defects. This study contributes to a better understanding of magnetic properties of carbon nanostructures, which could in the future be used for the design of multimodal imaging agents.

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Bakhsh, Allah, Iftikhar Hussain Gul, Ashari Maqsood, Shang Hsuan Wu, Ching Hsiang Chan, and Yia Chung Chang. "Effect of High Substrate Temperature on Morphology, Structural and Optical Properties of CdZnS Nanostructures." Materials Science Forum 886 (March 2017): 24–31. http://dx.doi.org/10.4028/www.scientific.net/msf.886.24.

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One-dimensional CdZnS nanostructures have been synthesized through the sublimation. Effect of high substrate temperature on morphology, structural and optical properties of these nanostructures has been studied. X-Ray diffraction peak intensity, lattice parameters, crystallite size decreased with an increase in substrate temperature. The morphology changed with the increase in the substrate temperature. Raman Spectroscopy confirmed the existence of constituent elements in CdZnS solid solution and an increase of Zn concentration with the rise in substrate temperature. The nanostructures exhibited strong photoluminescence emission in the green light region with a substrate temperature-dependent blue shift of 53 meV in emission energy. The Stoke’s shift energy raised from 45 meV to 302 meV as the substrate temperature increased from 510 °C to 550 °C. The stoichiometric deviancies, crystallite size, and quantum confinement effects resulted into an increase in the optical band gap from 2.4 eV to 2.71 eV. The results showed that CdZnS nanostructures could be potential candidates for nanostructure based optoelectronics and photovoltaic devices.

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Panyakeow, Somsak. "Quantum Nanostructures by Droplet Epitaxy." Engineering Journal 13, no. 1 (February 18, 2009): 51–56. http://dx.doi.org/10.4186/ej.2009.13.1.51.

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Barabanenkov, Yuri N., Sergej A. Nikitov, and Mikhail Yu Barabanenkov. "Quantum fluctuations in magnetic nanostructures." Uspekhi Fizicheskih Nauk 189, no. 01 (July 2018): 85–94. http://dx.doi.org/10.3367/ufnr.2018.07.038405.

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Wang, J. S., J. Wang, and J. T. Lü. "Quantum thermal transport in nanostructures." European Physical Journal B 62, no. 4 (April 2008): 381–404. http://dx.doi.org/10.1140/epjb/e2008-00195-8.

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Chakraborty, Tapash, and Vadim M. Apalkov. "Quantum cascade transitions in nanostructures." Advances in Physics 52, no. 5 (July 2003): 455–521. http://dx.doi.org/10.1080/0001873031000119619.

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Antoniou, I., E. Karpov, and G. Pronko. "Non-locality and quantum nanostructures." Chaos, Solitons & Fractals 17, no. 2-3 (July 2003): 277–81. http://dx.doi.org/10.1016/s0960-0779(02)00352-1.

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Pigorsch, Carsten, Wilfried Klix, and Roland Stenzel. "Quantum wire splitting in nanostructures." Microelectronic Engineering 43-44 (August 1998): 325–33. http://dx.doi.org/10.1016/s0167-9317(98)00181-6.

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Grabecki, G., J. Wróbel, P. Zagrajek, K. Fronc, M. Aleszkiewicz, T. Dietl, E. Papis, et al. "Quantum nanostructures of paraelectric PbTe." Physica E: Low-dimensional Systems and Nanostructures 35, no. 2 (December 2006): 332–37. http://dx.doi.org/10.1016/j.physe.2006.08.022.

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Zozoulenko, I. V., and K. F. Berggren. "Quantum Transport in Open Nanostructures." VLSI Design 8, no. 1-4 (January 1, 1998): 179–84. http://dx.doi.org/10.1155/1998/24813.

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Electron transport was studied in an open square quantum dot with a dimension typical for current experiments. A numerical analysis of the probability density distribution inside the dot was performed which enabled us to unambiguously map the resonant states which dominate the conductance of the structure. It was shown that, despite of the presence of dot openings, transport through the dot is effectively mediated by just a few (or even a single) eigenstates of the corresponding closed structure. In a single-mode regime in the leads, the broadening of the resonant levels is typically smaller than the mean energy level spacing, Δ. On the contrary, in the many-mode regime this broadening typically exceeds Δ and has an irregular, essentially non-Lorentzian, character. It was demonstrated that in the latter case eigenlevel spacing statistics of the corresponding closed system are not relevant to the averaged transport properties of the dot. This conclusion seems to have a number of experimental as well as numerical verifications.

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Kamli, Ali, and Smail Bougouffa. "Controlling quantum interference in nanostructures." Physica E: Low-dimensional Systems and Nanostructures 17 (April 2003): 449–50. http://dx.doi.org/10.1016/s1386-9477(02)00832-9.

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DOH, Yong-Joo, and Jinhee KIM. "Quantum Transport Phenomena in Nanostructures." Physics and High Technology 20, no. 10 (October 31, 2011): 21. http://dx.doi.org/10.3938/phit.20.042.

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Barabanenkov, Yu N., S. A. Nikitov, and M. Yu Barabanenkov. "Quantum fluctuations in magnetic nanostructures." Physics-Uspekhi 62, no. 1 (January 31, 2019): 82–91. http://dx.doi.org/10.3367/ufne.2018.07.038405.

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Jenkins, Jonathan K., and Shaul Mukamel. "Quantum electrodynamics of molecular nanostructures." Journal of Chemical Physics 98, no. 9 (May 1993): 7046–58. http://dx.doi.org/10.1063/1.464748.

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Bryant, Garnett W., Paul S. Julienne, and Yehuda B. Band. "Excitons in complex quantum nanostructures." Surface Science 361-362 (July 1996): 801–4. http://dx.doi.org/10.1016/0039-6028(96)00537-7.

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Zhao, Nan, Jia-Lin Zhu, R.-B. Liu, and C. P. Sun. "Quantum noise theory for quantum transport through nanostructures." New Journal of Physics 13, no. 1 (January 11, 2011): 013005. http://dx.doi.org/10.1088/1367-2630/13/1/013005.

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López-López, Máximo, Esteban Cruz-Hernández, Isaac Martínez-Velis, Juan Salvador Rojas-Ramírez, Manolo Ramirez-Lopez, and Álvaro Orlando Pulzara-Mora. "Self Assembly of semiconductor nanostructures." Respuestas 12, no. 2 (May 16, 2016): 47–51. http://dx.doi.org/10.22463/0122820x.570.

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Abstract In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) with SAQWRs by the Stransky–Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.Keywords : Quantum wires, quantum dots; selfassembly; molecular beam epitaxy.

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Ambardar, Sharad, Dang Nguyen, Grace Binder, Zachary W. Withers, and Dmitri V. Voronine. "Quantum Leap from Gold and Silver to Aluminum Nanoplasmonics for Enhanced Biomedical Applications." Applied Sciences 10, no. 12 (June 19, 2020): 4210. http://dx.doi.org/10.3390/app10124210.

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Nanotechnology has been used in many biosensing and medical applications, in the form of noble metal (gold and silver) nanoparticles and nanostructured substrates. However, the translational clinical and industrial applications still need improvements of the efficiency, selectivity, cost, toxicity, reproducibility, and morphological control at the nanoscale level. In this review, we highlight the recent progress that has been made in the replacement of expensive gold and silver metals with the less expensive aluminum. In addition to low cost, other advantages of the aluminum plasmonic nanostructures include a broad spectral range from deep UV to near IR, providing additional signal enhancement and treatment mechanisms. New synergistic treatments of bacterial infections, cancer, and coronaviruses are envisioned. Coupling with gain media and quantum optical effects improve the performance of the aluminum nanostructures beyond gold and silver.

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Ermakov, V. N., and E. A. Ponezha. "Modelling of Cold Electron Filtration in Tunnelling Nanostructures with Metallic Quantum Dot." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 42, no. 11 (December 21, 2020): 1467–80. http://dx.doi.org/10.15407/mfint.42.11.1467.

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AL-HASSANIEH, K. A., C. A. BÜSSER, and G. B. MARTINS. "ELECTRON TRANSPORT IN STRONGLY CORRELATED NANOSTRUCTURES." Modern Physics Letters B 23, no. 18 (July 20, 2009): 2193–213. http://dx.doi.org/10.1142/s0217984909020473.

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We present a short review on electron transport in strongly correlated nanostructures, quantum dots in particular. We describe briefly the main correlation effects, namely the Coulomb blockade and Kondo effect, and introduce three widely used numerical techniques to study these effects. We then give a brief summary of some more elaborate set-ups where two or more effects compete, making the transport properties very interesting to study. In particular, we report the cases of multilevel quantum dots, carbon nanotube based quantum dots, and quantum dots coupled by RKKY interaction.

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Seifert, Gotthard, Tommy Lorenz, and Jan-Ole Joswig. "Layered Nanostructures – Electronic and Mechanical Properties." MRS Proceedings 1549 (2013): 3–9. http://dx.doi.org/10.1557/opl.2013.858.

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ABSTRACTIn addition to graphene, 2D transition-metal chalcogenides as, e.g., MoS2 and WS2 nanostructures are promising materials for applications in electronics and mechanical engineering. Though the structure of these materials causes a highly inert surface with a low defect concentration, defects and edge effects can strongly influence the properties of these nanostructured materials. Therefore, a basic understanding of the interplay between electronic and mechanical properties and the influence of defects, edge states and doping is needed. We demonstrate on the basis of atomistic quantum-chemical simulations of a circular MoS2 platelet, how the mechanical deformation can vary the electronic properties and other device characteristics of such a system.

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