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Journal articles on the topic 'Quantum heterostructures'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Давыдова, З. "МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS." EurasianUnionScientists 6, no. 12(81) (January 18, 2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1163.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]

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2

Давыдова, З. "MODELING AND CALCULATION OF THE PHOTOLUMINESCENCE SPECTRUM OF A HETEROSTRUCTURE WITH A QUANTUM WELL BY THE EXAMPLE OF ALGaAS / GaAS." EurasianUnionScientists 6, no. 12(81) (January 18, 2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1172.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]

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3

Бабичев, А. В., А. С. Курочкин, Е. С. Колодезный, А. В. Филимонов, А. А. Усикова, В. Н. Неведомский, А. Г. Гладышев, et al. "Гетероструктуры одночастотных и двухчастотных квантово-каскадных лазеров." Физика и техника полупроводников 52, no. 6 (2018): 597. http://dx.doi.org/10.21883/ftp.2018.06.45922.8751.

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AbstractThe results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade lasers are reported. The heterostructure for a dual-frequency quantum-cascade laser includes cascades emitting at wavelengths of 9.6 and 7.6 μm. On the basis of the suggested heterostructure, it is possible to develop a quantum-cascade laser operating at a difference frequency of 8 THz. The heterostructures for the quantum-cascade laser are grown using molecularbeam epitaxy. The methods of X-ray diffraction and emission electron microscopy are used to study the structural properties of the fabricated heterostructures. Good agreement between the specified and realized thicknesses of the epitaxial layers and a high uniformity of the chemical composition and thicknesses of the epitaxial layers over the area of the heterostructure is demonstrated. A stripe-structured quantum-cascade laser is fabricated; its generation at a wavelength of 9.6 μm is demonstrated.

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4

Глинский, Г. Ф. "Простой численный метод определения энергетического спектра носителей заряда в полупроводниковых гетероструктурах." Письма в журнал технической физики 44, no. 6 (2018): 17. http://dx.doi.org/10.21883/pjtf.2018.06.45763.17113.

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AbstractA simple numerical method for determining the energy spectrum and wave functions of charge carriers in semiconductor heterostructures (quantum wells, wires, dots, and superlattices) is proposed that employs the effective mass approximation in the general case of multiband kp Hamiltonian corresponding to the Γ point of the Brillouin zone. The method is based on the Fourier transform for structures with periodic potential. For single heterostructures, this periodicity is introduced artificially. In the framework of the proposed approach, the effective matrix Hamiltonian of a heterostructure can be written in two unitarily-equivalent a - and k -representations. As an example, single-band kp models of a heterostructure with one parabolic, triangular, or rectangular quantum well are considered and the influence of interfacial kp corrections on the behavior of envelope functions at sharp heteroboundaries is studied.

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5

Iliash, S. A. "Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 1 (April 8, 2016): 75–78. http://dx.doi.org/10.15407/spqeo19.01.075.

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6

Chang, Leroy L., and Leo Esaki. "Semiconductor Quantum Heterostructures." Physics Today 45, no. 10 (October 1992): 36–43. http://dx.doi.org/10.1063/1.881342.

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7

Boschker, H., and J. Mannhart. "Quantum-Matter Heterostructures." Annual Review of Condensed Matter Physics 8, no. 1 (March 31, 2017): 145–64. http://dx.doi.org/10.1146/annurev-conmatphys-031016-025404.

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8

Wu, Jiazhen, Fucai Liu, Masato Sasase, Koichiro Ienaga, Yukiko Obata, Ryu Yukawa, Koji Horiba, et al. "Natural van der Waals heterostructural single crystals with both magnetic and topological properties." Science Advances 5, no. 11 (November 2019): eaax9989. http://dx.doi.org/10.1126/sciadv.aax9989.

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Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

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9

Малевская, А. В., Н. А. Калюжный, С. А. Минтаиров, Р. А. Салий, Д. А. Малевский, М. В. Нахимович, В. Р. Ларионов, П. В. Покровский, М. З. Шварц, and В. М. Андреев. "Высокоэффективные (EQE=37.5%) инфракрасные (850 нм) светодиоды с брэгговским и зеркальным отражателями." Физика и техника полупроводников 55, no. 12 (2021): 1218. http://dx.doi.org/10.21883/ftp.2021.12.51709.9711.

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Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm2 have been fabricated.

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10

GRESHNOV, A. A., E. N. KOLESNIKOVA, and G. G. ZEGRYA. "SPECTRUM OF CARRIERS AND OPTICAL PROPERTIES OF 2D HETEROSTRUCTURES IN TILTED MAGNETIC FIELD." International Journal of Nanoscience 02, no. 06 (December 2003): 401–9. http://dx.doi.org/10.1142/s0219581x03001498.

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The structure and features of spatially-confined states in the presence of a tilted magnetic field are theoretically investigated. The electron states in single- and double-quantum wells are described using the variational method. It is shown that the finite ratio of magnetic length to the width of heterostructure could not be neglected in the strong tilted magnetic field. The electronic structure of broken-gap heterostructures is considered similar to the case of usual double-quantum-well with the high narrow barrier. It is shown that tilted magnetic field can eliminate the strong coupling between two degenerated electron states or those of the electron and hole. The existence of such an effect is in accordance with cyclotron resonance studies of InAs / GaSb heterostructures.

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11

Jiang, Tianhao, Chaoqun Shang, Qingguo Meng, Mingliang Jin, Hua Liao, Ming Li, Zhihong Chen, Mingzhe Yuan, Xin Wang, and Guofu Zhou. "The Ternary Heterostructures of BiOBr/Ultrathin g-C3N4/Black Phosphorous Quantum Dot Composites for Photodegradation of Tetracycline." Polymers 10, no. 10 (October 9, 2018): 1118. http://dx.doi.org/10.3390/polym10101118.

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Herein, we synthesized BiOBr/ultrathin g-C3N4/ternary heterostructures modified with black phosphorous quantum dots using a simple water bath heating and sonication method. The ternary heterostructure was then used for the photocatalytic degradation of tetracycline in visible light, with an efficiency as high as 92% after 3 h of irradiation. Thus, the photodegradation efficiency is greatly improved compared to that of ultrathin g-C3N4, BiOBr, and black phosphorous quantum dots alone. The synthesized ternary heterostructure improves the charge separation efficiency, thus increasing the photodegradation efficiency. This work provides a new and efficient method for the degradation of antibiotics in the environment.

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12

He, Ke, and Qi-Kun Xue. "Quantum anomalous Hall heterostructures." National Science Review 6, no. 2 (December 22, 2018): 202–4. http://dx.doi.org/10.1093/nsr/nwy157.

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13

Klimovskaya, A. I., Yu A. Driga, E. G. Gule, and O. O. Pikaruk. "Superradiance in quantum heterostructures." Semiconductors 37, no. 6 (June 2003): 681–85. http://dx.doi.org/10.1134/1.1582535.

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14

Dey, Moumita, and Santanu K. Maiti. "Selective spin transport through a quantum heterostructure: Transfer matrix method." International Journal of Modern Physics B 30, no. 25 (September 28, 2016): 1650184. http://dx.doi.org/10.1142/s0217979216501848.

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In the present work, we propose that a one-dimensional quantum heterostructure composed of magnetic and non-magnetic (NM) atomic sites can be utilized as a spin filter for a wide range of applied bias voltage. A simple tight-binding framework is given to describe the conducting junction where the heterostructure is coupled to two semi-infinite one-dimensional NM electrodes. Based on transfer matrix method, all the calculations are performed numerically which describe two-terminal spin-dependent transmission probability along with junction current through the wire. Our detailed analysis may provide fundamental aspects of selective spin transport phenomena in one-dimensional heterostructures at nanoscale level.

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15

Семакова, А. А., Н. Л. Баженов, К. Д. Мынбаев, А. В. Черняев, С. С. Кижаев, and Н. Д. Стоянов. "Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K." Физика и техника полупроводников 55, no. 6 (2021): 502. http://dx.doi.org/10.21883/ftp.2021.06.50917.9622.

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The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

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16

Уточкин, В. В., В. Я. Алёшкин, А. А. Дубинов, В. И. Гавриленко, Н. С. Куликов, М. А. Фадеев, В. В. Румянцев, Н. Н. Михайлов, С. А. Дворецкий, and С. В. Морозов. "Исследование пороговой энергии оже-рекомбинации в волноводных структурах с квантовыми ямами HgTe/Cd-=SUB=-0.7-=/SUB=-Hg-=SUB=-0.3-=/SUB=-Te в области 14 мкм." Физика и техника полупроводников 53, no. 9 (2019): 1178. http://dx.doi.org/10.21883/ftp.2019.09.48120.03.

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AbstractStimulated emission from a heterostructure with Hg_0 . 903Cd_0 . 097Te/Cd_0 . 7Hg_0 . 3Te quantum wells, placed in a waveguide layer of wide-gap CdHgTe, is obtained at wavelengths of 14–11 μm and a temperatures of 18–80 K. The threshold Auger recombination energy is calculated for a set of heterostructures with quantum wells of pure HgTe with a band gap of 90 meV (wavelength 14 μm). The possibility of fabricating lasers operating at 14 μm and working temperatures higher than that of liquid nitrogen is demonstrated.

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17

Рочас, С. С., И. И. Новиков, А. Г. Гладышев, Е. С. Колодезный, А. В. Бабичев, В. В. Андрюшкин, В. Н. Неведомский, et al. "Влияние параметров короткопериодной сверхрешетки InGaAs/InGaAlAs на эффективность фотолюминесценции." Письма в журнал технической физики 46, no. 22 (2020): 27. http://dx.doi.org/10.21883/pjtf.2020.22.50304.18421.

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The results of the study of heterostructures based on short-period InGaAs/InGaAlAs superlattices fabricated by molecular beam epitaxy on an InP substrate with the aim of using them as active regions for vertical-cavity surface emitting lasers of the 1.3 μm spectral range are studied. Photoluminescence and X-ray diffraction studies of the fabricated heterostructures are carried out. It was shown that a change in the ratio of the quantum well thickness and the barrier layer thickness of the superlattice allows one to controllably shift the position of the photoluminescence peak and to provide the heterostructure parameters necessary to achieve lasing at a wavelength of 1.3 μm, while the photoluminescence efficiency remains practically unchanged.

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18

Dvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, and Alexander Mudryi. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.

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New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

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19

Малевская, А. В., Н. А. Калюжный, Д. А. Малевский, С. А. Минтаиров, А. М. Надточий, М. В. Нахимович, Ф. Ю. Солдатенков, М. З. Шварц, and В. М. Андреев. "Инфракрасные (850 нм) светодиоды с множественными квантовыми ямами InGaAs и "тыльным" отражателем." Физика и техника полупроводников 55, no. 8 (2021): 699. http://dx.doi.org/10.21883/ftp.2021.08.51143.9665.

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Investigation of IR light emitting diodes (wavelength 850 nm) based on heterostructures AlGaAs/GaAs with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate GaAs and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92-93% has been achieved. Light-emitting diodes with the external quantum efficiency of 28.5% have been fabricated.

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20

York, M. C. A., F. Proulx, D. P. Masson, A. Jaouad, B. Bouzazi, R. Arès, V. Aimez, and S. Fafard. "Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers Based on a Vertical Epitaxial Heterostructure Architecture." MRS Advances 1, no. 14 (2016): 881–90. http://dx.doi.org/10.1557/adv.2016.9.

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ABSTRACTThin GaAs photovoltaic heterostructures are grown by MOCVD with various p-GaAs base thicknesses. The total n/p absorbing thickness is varied systematically. Output voltages up to ∼1.155V were obtained for individual n/p junctions at an average illumination intensity of ∼8W/cm2. Novel phototransducer devices are then achieved with a vertical epitaxial heterostructure architecture, monolithically integrating 5 or more such thin n/p junctions. Around the design wavelength, the stacked heterostructure design is yielding an optimal external quantum efficiency approaching unity divided by the number of junctions. The modeled and measured conversion efficiencies are exceeding 60%. The photocarrier extraction properties are simulated for different junction thicknesses using a model based on a 3-dimensional (3D) radially-symmetric TCAD implementation of the heterostructures. The study clearly demonstrates that for such thin n/p junctions the photocarrier extraction can still be efficient due to the operation at reduced current densities and higher voltages in heterostructures enhancing electrical power extraction. With the supplementary add-on of a window layer with a reduced sheet resistance for the stacked structure, we demonstrate the possible efficient operation of phototransducers for optical inputs exceeding 150 W/cm2, even for the case of devices designed without gridlines.

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21

Zhu, Rui, and Li-Juan Cui. "Quantum pumping in helimagnet heterostructures." Physics Letters A 378, no. 3 (January 2014): 280–85. http://dx.doi.org/10.1016/j.physleta.2013.11.014.

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22

Prinz, Günther M., Timm Gerber, Axel Lorke, and Martina Müller. "Quantum confinement in EuO heterostructures." Applied Physics Letters 109, no. 20 (November 14, 2016): 202401. http://dx.doi.org/10.1063/1.4966223.

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23

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Physics-Uspekhi 44, no. 12 (December 31, 2001): 1304–7. http://dx.doi.org/10.1070/pu2001v044n12abeh001057.

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24

Henini, M. "Quantum Heterostructures: Microelectronics and Optoelectronics." Microelectronics Journal 31, no. 3 (March 2000): 222. http://dx.doi.org/10.1016/s0026-2692(99)00135-4.

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25

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Uspekhi Fizicheskih Nauk 171, no. 12 (2001): 1371. http://dx.doi.org/10.3367/ufnr.0171.200112h.1371.

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26

Pikaruk, O. O. "“Multicoloured” superradiance in quantum heterostructures." Semiconductor Physics, Quantum Electronics and Optoelectronics 7, no. 2 (June 17, 2004): 168–70. http://dx.doi.org/10.15407/spqeo7.02.168.

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27

Eaves, L., T. M. Fromhold, F. W. Sheard, P. B. Wilkinson, M. Henini, N. Miura, and T. Takamasu. "Quantum chaology in semiconductor heterostructures." Physica Scripta T68 (January 1, 1996): 51–55. http://dx.doi.org/10.1088/0031-8949/1996/t68/007.

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28

Ferreira, R., and G. Bastard. "Unbound states in quantum heterostructures." Nanoscale Research Letters 1, no. 2 (September 27, 2006): 120–36. http://dx.doi.org/10.1007/s11671-006-9000-1.

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29

Scholl, S., J. Gerschütz, F. Fischer, A. Waag, K. Schüll, H. Schäfer, and G. Landwehr. "Quantum Hall effect in heterostructures." Solid State Communications 94, no. 11 (June 1995): 935–38. http://dx.doi.org/10.1016/0038-1098(95)00113-1.

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30

Weisbuch, C. "New developments in quantum heterostructures." Microelectronic Engineering 19, no. 1-4 (September 1992): 871–78. http://dx.doi.org/10.1016/0167-9317(92)90562-6.

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31

Абрамкин, Д. С., М. О. Петрушков, М. А. Путято, Б. Р. Семягин, Е. А. Емельянов, В. В. Преображенский, А. К. Гутаковский, and Т. С. Шамирзаев. "XXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Гетероструктуры с GaAs/GaP-квантовыми ямами, выращенные на Si-подложках." Физика и техника полупроводников 53, no. 9 (2019): 1167. http://dx.doi.org/10.21883/ftp.2019.09.48118.01.

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AbstractMolecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

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32

Надточий, А. М., С. А. Минтаиров, Н. А. Калюжный, М. В. Максимов, Д. А. Санников, Т. Ф. Ягафаров, and А. Е. Жуков. "Фотолюминесценция с временным разрешением наноструктур InGaAs различной квантовой размерности." Физика и техника полупроводников 53, no. 11 (2019): 1520. http://dx.doi.org/10.21883/ftp.2019.11.48448.9167.

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By using time-correlated single-photon counting time-resolved photoluminescence of quantum-sized heterostructures of different dimensionality was investigated. InGaAs quantum dots, quantum well, and transitionally-dimensional structure — quantum well-dots were grown on GaAs substrates. It was observed, that photoluminescence decay strongly depends on structure dimensionality resulting in decay value of 6,7, and more than 20 ns for quantum dots, well-dots and well, respectively. As we believe localization centers in heterostructures may be responsible for such shortening of photoluminescence lifetime.

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33

Маняхин, Ф. И. "Механизм и закономерность снижения светового потока светодиодов на основе структур AlGaN/InGaN/GaN с квантовыми ямами при длительном протекании прямого тока различной плотности." Физика и техника полупроводников 52, no. 3 (2018): 378. http://dx.doi.org/10.21883/ftp.2018.03.45625.8341.

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AbstractThe mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

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34

BHATTACHARYA, PALLAB. "QUANTUM DOT SEMICONDUCTOR LASERS." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1081–107. http://dx.doi.org/10.1142/s0129156498000427.

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The formation of coherently strained islands during the growth of strained heterostructures has been exploited to form an array of quantum dots. The shape and size of the islands vary with growth parameters, but exhibit the electronic properties of zero-dimensional systems. One or multiple, vertically coupled, layers of such quantum dots can form the gain region of a separately confined heterostructure (SCH) laser. The properties of such InGaAs/GaAs self-organized quantum dot lasers are described here. The lasers exhibit temperature independent operation up to 100 K and beyond. Typical threshold currents of 200 μm long room temperature lasers vary from 6 to 20 mA. The small-signal modulation bandwidths of ridge waveguide lasers are 5–7.5 GHz at 300 K and increased to >20 GHz at 80 K. We believe that electron-hole scattering intrinsically limits the high-speed performance of these devices, in spite of differential gains as high as ~ 7× 10-14 cm2 at room temperature. Wavelength switching is demonstrated in these devices and preliminary results on long-wavelengths intersubband quantum dot light emitters are also presented.

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Kisin, Mikhail V., Mitra Dutta, and Michael A. Stroscio. "ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 939–68. http://dx.doi.org/10.1142/s0129156402001873.

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We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.

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Yakovlev, G. E., D. S. Frolov, and V. I. Zubkov. "Diagnostics of semiconductor structures by electrochemical capacitance-voltage profiling technique." Industrial laboratory. Diagnostics of materials 87, no. 1 (January 19, 2021): 35–44. http://dx.doi.org/10.26896/1028-6861-2021-87-1-35-44.

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The properties of interfaces in the heterostructures which frequently govern their operation are of particular importance for the devices containing heterostructures as active elements. Any further improving of the characteristics of semiconductor devices is impossible without a detail analysis of the processes occurring at the interfaces of heterojunctions. At the same time, the results largely depend on the purity of the starting materials and the technology of layer manufacturing. Moreover, the requirements to the composition and distribution of the impurity steadily get stringent. Therefore, the requirements regarding the methods of the impurity control and carrier distribution also become tougher both in the stage of laboratory development of the structure and in various stages of manufacturing of semiconductor devices. Electrochemical capacitance-voltage profiling is distinguished among the methods of electrical diagnostics of semiconductors by the absence of special preparation of the structures and deposition of the contacts to perform measurements, thus providing for gaining information not only about the impurity distribution but also about the distribution of free carriers. The goal of this work is to perform precise measurements of the profiles of free carrier distribution in semiconductor structures of different types, and demonstrate the measuring capabilities of a modern technique for concentration distribution diagnostics, i.e., electrochemical capacitance-voltage profiling. The method allows verification of the layer thickness in semiconductor heterostructures and provide a useful and informative feedback to technologists. To increase the resolution of the method and broad up the range of available test frequencies, a standard electrochemical profiler has been modified. Mapping data for GaAs substrate structure, the profiles of the concentration distribution of the majority charge carriers in SiC structures, GaAs structure with a p – n junction, pHEMT heterostructure, GaN heterostructure with multiple quantum wells, and in a silicon-based solar cell heterostructure are presented. The obtained results can be used to analyze the physical properties and phenomena in semiconductor devices with quantum-sized layers, as well as to improve and refine the parameters of existing electronic devices.

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Ploog, Klaus H. "Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision." Физика и техника полупроводников 52, no. 5 (2018): 513. http://dx.doi.org/10.21883/ftp.2018.05.45857.46.

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AbstractIn this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

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Jiang, Pingping, Pascal Boulet, and Marie-Christine Record. "Structure-Property Relationships of 2D Ga/In Chalcogenides." Nanomaterials 10, no. 11 (November 2, 2020): 2188. http://dx.doi.org/10.3390/nano10112188.

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Two-dimensional MX (M = Ga, In; X = S, Se, Te) homo- and heterostructures are of interest in electronics and optoelectronics. Structural, electronic and optical properties of bulk and layered MX and GaX/InX heterostructures have been investigated comprehensively using density functional theory (DFT) calculations. Based on the quantum theory of atoms in molecules, topological analyses of bond degree (BD), bond length (BL) and bond angle (BA) have been detailed for interpreting interatomic interactions, hence the structure–property relationship. The X–X BD correlates linearly with the ratio of local potential and kinetic energy, and decreases as X goes from S to Te. For van der Waals (vdW) homo- and heterostructures of GaX and InX, a cubic relationship between microscopic interatomic interaction and macroscopic electromagnetic behavior has been established firstly relating to weighted absolute BD summation and static dielectric constant. A decisive role of vdW interaction in layer-dependent properties has been identified. The GaX/InX heterostructures have bandgaps in the range 0.23–1.49 eV, absorption coefficients over 10−5 cm−1 and maximum conversion efficiency over 27%. Under strain, discordant BD evolutions are responsible for the exclusively distributed electrons and holes in sublayers of GaX/InX. Meanwhile, the interlayer BA adjustment with lattice mismatch explains the constraint-free lattice of the vdW heterostructure.

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Dibenedetto, Carlo Nazareno, Teresa Sibillano, Rosaria Brescia, Mirko Prato, Leonardo Triggiani, Cinzia Giannini, Annamaria Panniello, et al. "PbS Quantum Dots Decorating TiO2 Nanocrystals: Synthesis, Topology, and Optical Properties of the Colloidal Hybrid Architecture." Molecules 25, no. 12 (June 26, 2020): 2939. http://dx.doi.org/10.3390/molecules25122939.

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Fabrication of heterostructures by merging two or more materials in a single object. The domains at the nanoscale represent a viable strategy to purposely address materials’ properties for applications in several fields such as catalysis, biomedicine, and energy conversion. In this case, solution-phase seeded growth and the hot-injection method are ingeniously combined to fabricate TiO2/PbS heterostructures. The interest in such hybrid nanostructures arises from their absorption properties that make them advantageous candidates as solar cell materials for more efficient solar light harvesting and improved light conversion. Due to the strong lattice mismatch between TiO2 and PbS, the yield of the hybrid structure and the control over its properties are challenging. In this study, a systematic investigation of the heterostructure synthesis as a function of the experimental conditions (such as seeds’ surface chemistry, reaction temperature, and precursor concentration), its topology, structural properties, and optical properties are carried out. The morphological and chemical characterizations confirm the formation of small dots of PbS by decorating the oleylamine surface capped TiO2 nanocrystals under temperature control. Remarkably, structural characterization points out that the formation of heterostructures is accompanied by modification of the crystallinity of the TiO2 domain, which is mainly ascribed to lattice distortion. This result is also confirmed by photoluminescence spectroscopy, which shows intense emission in the visible range. This originated from self-trapped excitons, defects, and trap emissive states.

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Bhardwaj, Garima, Sandhya K., Richa Dolia, M. Abu-Samak, Shalendra Kumar, and P. A. Alvi. "A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments." Bulletin of Electrical Engineering and Informatics 7, no. 1 (March 1, 2018): 35–41. http://dx.doi.org/10.11591/eei.v7i1.872.

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In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

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Колодезный, Е. С., А. С. Курочкин, С. С. Рочас, А. В. Бабичев, И. И. Новиков, А. Г. Гладышев, Л. Я. Карачинский, А. В. Савельев, А. Ю. Егоров, and Д. В. Денисов. "Влияние легирования барьерных слоев на эффективность фотолюминесценции напряженных гетероструктур InGaAlAs/InGaAs/InP." Физика и техника полупроводников 52, no. 9 (2018): 1034. http://dx.doi.org/10.21883/ftp.2018.09.46152.8865.

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AbstractThe photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In_0.74Ga_0.26As quantum wells and δ-doped In_0.53Al_0.20Ga_0.27As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p -type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10^12 cm^–2 results in the suppression of nonradiative recombination.

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Бабичев, А. В., А. Г. Гладышев, А. С. Курочкин, Е. С. Колодезный, В. Н. Неведомский, Л. Я. Карачинский, И. И. Новиков, А. Н. Софронов, and А. Ю. Егоров. "Спонтанное и стимулированное излучение двухчастотного квантово-каскадного лазера." Физика и техника полупроводников 53, no. 3 (2019): 365. http://dx.doi.org/10.21883/ftp.2019.03.47289.9015.

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AbstractThe results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In_0.53Ga_0.47As/Al_0.48In_0.52As solid solutions on an InP substrate are presented. The heterostructures contained quantum cascades emitting at a wavelength of 9.6 μm and cascades emitting at a wavelength of 7.6 μm. The high structural quality of the fabricated heterostructures is shown. The spontaneous emission and lasing spectra are investigated and the multimodal laser generation of stripe lasers at a wavelength of 7.6 μm is demonstrated.

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Померанцев, Ю. А. "Рассеяние электронов и дырок глубокими примесями в полупроводниковых гетероструктурах с квантовыми ямами." Физика твердого тела 62, no. 10 (2020): 1601. http://dx.doi.org/10.21883/ftt.2020.10.49903.092.

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Electron and hole scattering by deep impurities in gallium arsenide heterostructures with two quantum wells under arbitrary doping profile was considered within the strongly localized potential approximation. The de-pendence of scattering rate on the carrier energy was shown to reproduce the step-like form of the density of states for size quantization subbands of the heterostructure accounting for the contribution of the overlap integral of the carrier wave functions. For hole subbands of negative effective mass the scattering rates at the subband edges have singularities common for one-dimensional systems.

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Sugiyama, Yoshinobu. "Magnetic Sensors with Quantum-well Heterostructures." IEEJ Transactions on Fundamentals and Materials 115, no. 9 (1995): 793–98. http://dx.doi.org/10.1541/ieejfms1990.115.9_793.

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Bischoff, D., M. Eich, A. Varlet, P. Simonet, H. C. Overweg, K. Ensslin, and T. Ihn. "Graphene nano-heterostructures for quantum devices." Materials Today 19, no. 7 (September 2016): 375–81. http://dx.doi.org/10.1016/j.mattod.2016.02.021.

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Kulakova, L. A., N. S. Averkiev, A. V. Lyutetskiy, and V. A. Gorelov. "Acoustoelectron interaction in quantum laser heterostructures." Semiconductors 47, no. 1 (January 2013): 135–40. http://dx.doi.org/10.1134/s1063782613010168.

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Kononenko, V. K. "Nonlinear Absorption in Quantum-Size Heterostructures." physica status solidi (b) 150, no. 2 (December 1, 1988): 695–98. http://dx.doi.org/10.1002/pssb.2221500256.

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Karunasiri, R. P. G. "Quantum devices using SiGe/Si heterostructures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 4 (July 1991): 2064. http://dx.doi.org/10.1116/1.585778.

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Kononenko, V. K., I. S. Manak, and É. R. Furunzhiev. "Gain saturation in quantum-well heterostructures." Journal of Applied Spectroscopy 64, no. 6 (November 1997): 813–17. http://dx.doi.org/10.1007/bf02678866.

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Yarema, S. V., and R. D. Vengrenovich. "Size distribution in quantum-dot heterostructures." Russian Physics Journal 49, no. 4 (April 2006): 411–19. http://dx.doi.org/10.1007/s11182-006-0119-4.

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