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Books on the topic 'Quantum heterostructures'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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1

A, Kochelap V., and Stroscio Michael A. 1949-, eds. Quantum heterostructures: Microelectronics and optoelectronics. Cambridge: Cambridge University Press, 1999.

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2

Leo, Karl. Dynamics of coherent optical excitations in semiconductor heterostructures. Aachen: Verlag Shaker, 1993.

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3

Mandal, Arjun, and Subhananda Chakrabarti. Impact of Ion Implantation on Quantum Dot Heterostructures and Devices. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4334-5.

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4

Ivchenko, Eougenious L. Superlattices and Other Heterostructures: Symmetry and Optical Phenomena. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997.

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5

Sengupta, Saumya, and Subhananda Chakrabarti. Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-5702-1.

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6

Ivchenko, E. L. Superlattices and other heterostructures: Symmetry and optical phenomena. Berlin: Springer-Verlag, 1995.

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7

Ivchenko, E. L. Superlattices and other heterostructures: Symmetry and optical phenomena. 2nd ed. Berlin: Springer, 1997.

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8

Vasʹko, F. T. Ėlektronnye sostoi͡a︡nii͡a︡ i opticheskie perekhody v poluprovodnikovykh geterostrukturakh. Kiev: Nauk. dumka, 1993.

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9

J, Paul D., ed. Silicon quantum integrated circuits: Silicon-germanium heterostructure devices : basics and realisations. Berlin: Springer, 2005.

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10

Quantum Dot Heterostructures. Wiley, 1999.

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11

G, Einspruch Norman, and Frensley William R, eds. Heterostructures and quantum devices. San Diego: Academic Press, 1994.

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12

Heterostructures and Quantum Devices. Elsevier, 1994. http://dx.doi.org/10.1016/c2009-0-21233-5.

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13

Mandal, Arjun, and Subhananda Chakrabarti. Impact of Ion Implantation on Quantum Dot Heterostructures and Devices. Springer, 2018.

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14

Mandal, Arjun, and Subhananda Chakrabarti. Impact of Ion Implantation on Quantum Dot Heterostructures and Devices. Springer, 2017.

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15

Muratov, Leonid Semenovich. Density matriz approach to intersubband electronic transitions in semiconductor heterostructures. 1994.

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16

W, Koch S., ed. Microscopic theory of semiconductors: Quantum kinetics, confinement, and lasers. Singapore: World Scientific, 1995.

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17

Shuford, Kevin L. Quantum control of charge carrier dynamics in layered semiconductor heterostructures. 2003.

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18

Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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19

Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.
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20

Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures. [Washington, DC: National Aeronautics and Space Administration, 1996.

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21

1948-, Gumbs Godfrey, Fisons/VG, and Materials Research Society. Meeting Symposium M., eds. Growth, processing, and characterization of semiconductor heterostructures: Symposium held November 29-December 2, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1994.

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22

Gumbs, Godfrey. Growth, Processing, and Characterization of Semiconductor Heterostructures: Symposium Held November 29-December 2, Boston, Massachusetts, U.S.A, V (Materials Research Society symposium proceedings). Materials Research Society, 1998.

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23

Sengupta, Saumya, and Subhananda Chakrabarti. Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures: Applications for High-performance Infrared Photodetectors. Springer, 2019.

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24

Sengupta, Saumya, and Subhananda Chakrabarti. Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures: Applications for High-performance Infrared Photodetectors. Springer, 2017.

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25

Li, Y. Y., and J. F. Jia. Topological Superconductors and Majorana Fermions. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.6.

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This article discusses recent developments relating to the so-called topological superconductors (TSCs), which have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions (MFs). It first provides a background on topological superconductivity as a novel quantum state of matter before turning to topological insulators (TIs) and superconducting heterostructures, with particular emphasis on the vortices of such materials and the Majorana mode within a vortex. It also considers proposals for realizing TSCs by proximity effects through TI/SC heterostructures as well as experimental efforts to fabricate artificial TSCs using nanowires, superconducting junctions, and ferromagnetic atomic chains on superconductors.
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26

Narlikar, A. V., and Y. Y. Fu, eds. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.

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This volume highlights engineering and related developments in the field of nanoscience and technology, with a focus on frontal application areas like silicon nanotechnologies, spintronics, quantum dots, carbon nanotubes, and protein-based devices as well as various biomolecular, clinical and medical applications. Topics include: the role of computational sciences in Si nanotechnologies and devices; few-electron quantum-dot spintronics; spintronics with metallic nanowires; Si/SiGe heterostructures in nanoelectronics; nanoionics and its device applications; and molecular electronics based on self-assembled monolayers. The volume also explores the self-assembly strategy of nanomanufacturing of hybrid devices; templated carbon nanotubes and the use of their cavities for nanomaterial synthesis; nanocatalysis; bifunctional nanomaterials for the imaging and treatment of cancer; protein-based nanodevices; bioconjugated quantum dots for tumor molecular imaging and profiling; modulation design of plasmonics for diagnostic and drug screening; theory of hydrogen storage in nanoscale materials; nanolithography using molecular films and processing; and laser applications in nanotechnology. The volume concludes with an analysis of the various risks that arise when using nanomaterials.
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27

Blamire, M. G., and J. W. A. Robinson. Superconducting Spintronics and Devices. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.14.

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This article reviews the current status of superconducting spintronics and devices, with particular emphasis on the critical issues and developments needed for their application to low-power quantum computing. It first provides an overview of conventional spintronics before discussing the rationale for superconducting spintronics. It then considers the proximity effects and Josephson junctions in superconductor-ferromagnet heterostructures, along with spin transport in the superconducting state. It also examines the issue of memory in superconducting spintronics, especially with respect to reading and writing magnetic data via superconducting states, and how to generate memory logic in such devices. Finally, it evaluates the potential application of superconductor-ferromagnetic insulator devices as thermoelectric systems in low-temperature electronic circuits.
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28

Tiwari, Sandip. Semiconductor Physics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.001.0001.

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A graduate-level text, Semiconductor physics: Principles, theory and nanoscale covers the central topics of the field, together with advanced topics related to the nanoscale and to quantum confinement, and integrates the understanding of important attributes that go beyond the conventional solid-state and statistical expositions. Topics include the behavior of electrons, phonons and photons; the energy and entropic foundations; bandstructures and their calculation; the behavior at surfaces and interfaces, including those of heterostructures and their heterojunctions; deep and shallow point perturbations; scattering and transport, including mesoscale behavior, using the evolution and dynamics of classical and quantum ensembles from a probabilistic viewpoint; energy transformations; light-matter interactions; the role of causality; the connections between the quantum and the macroscale that lead to linear responses and Onsager relationships; fluctuations and their connections to dissipation, noise and other attributes; stress and strain effects in semiconductors; properties of high permittivity dielectrics; and remote interaction processes. The final chapter discusses the special consequences of the principles to the variety of properties (consequences of selection rules, for example) under quantum-confined conditions and in monolayer semiconductor systems. The text also bring together short appendices discussing transform theorems integral to this study, the nature of random processes, oscillator strength, A and B coefficients and other topics important for understanding semiconductor behavior. The text brings the study of semiconductor physics to the same level as that of the advanced texts of solid state by focusing exclusively on the equilibrium and off-equilibrium behaviors important in semiconductors.
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29

Silicon Quantum Integrated Circuits SiliconGermanium Heterostructure Devices Nanoscience and Technology. Springer, 2010.

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30

(Editor), Robert K. Willardson, Richard A. Kiehl (Editor), T. C.L. Gerhard Sollner (Editor), Albert C. Beer (Series Editor), and Eicke R. Weber (Series Editor), eds. High Speed Heterostructure Devices, Volume 41 (Semiconductors and Semimetals). Academic Press, 1994.

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31

(Editor), Robert K. Willardson, Richard A. Kiehl (Editor), T. C.L. Gerhard Sollner (Editor), Albert C. Beer (Series Editor), and Eicke R. Weber (Series Editor), eds. High Speed Heterostructure Devices, Volume 41 (Semiconductors and Semimetals). Academic Press, 1994.

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