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Relevant bibliographies by topics / Quantum heterostructures

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Academic literature on the topic 'Quantum heterostructures'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Quantum heterostructures"

1

Давыдова, З. "МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS." EurasianUnionScientists 6, no. 12(81) (January 18, 2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1163.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]

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Давыдова, З. "MODELING AND CALCULATION OF THE PHOTOLUMINESCENCE SPECTRUM OF A HETEROSTRUCTURE WITH A QUANTUM WELL BY THE EXAMPLE OF ALGaAS / GaAS." EurasianUnionScientists 6, no. 12(81) (January 18, 2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1172.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]

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3

Бабичев, А. В., А. С. Курочкин, Е. С. Колодезный, А. В. Филимонов, А. А. Усикова, В. Н. Неведомский, А. Г. Гладышев, et al. "Гетероструктуры одночастотных и двухчастотных квантово-каскадных лазеров." Физика и техника полупроводников 52, no. 6 (2018): 597. http://dx.doi.org/10.21883/ftp.2018.06.45922.8751.

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AbstractThe results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade lasers are reported. The heterostructure for a dual-frequency quantum-cascade laser includes cascades emitting at wavelengths of 9.6 and 7.6 μm. On the basis of the suggested heterostructure, it is possible to develop a quantum-cascade laser operating at a difference frequency of 8 THz. The heterostructures for the quantum-cascade laser are grown using molecularbeam epitaxy. The methods of X-ray diffraction and emission electron microscopy are used to study the structural properties of the fabricated heterostructures. Good agreement between the specified and realized thicknesses of the epitaxial layers and a high uniformity of the chemical composition and thicknesses of the epitaxial layers over the area of the heterostructure is demonstrated. A stripe-structured quantum-cascade laser is fabricated; its generation at a wavelength of 9.6 μm is demonstrated.

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Глинский, Г. Ф. "Простой численный метод определения энергетического спектра носителей заряда в полупроводниковых гетероструктурах." Письма в журнал технической физики 44, no. 6 (2018): 17. http://dx.doi.org/10.21883/pjtf.2018.06.45763.17113.

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AbstractA simple numerical method for determining the energy spectrum and wave functions of charge carriers in semiconductor heterostructures (quantum wells, wires, dots, and superlattices) is proposed that employs the effective mass approximation in the general case of multiband kp Hamiltonian corresponding to the Γ point of the Brillouin zone. The method is based on the Fourier transform for structures with periodic potential. For single heterostructures, this periodicity is introduced artificially. In the framework of the proposed approach, the effective matrix Hamiltonian of a heterostructure can be written in two unitarily-equivalent a - and k -representations. As an example, single-band kp models of a heterostructure with one parabolic, triangular, or rectangular quantum well are considered and the influence of interfacial kp corrections on the behavior of envelope functions at sharp heteroboundaries is studied.

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5

Iliash, S. A. "Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 1 (April 8, 2016): 75–78. http://dx.doi.org/10.15407/spqeo19.01.075.

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6

Chang, Leroy L., and Leo Esaki. "Semiconductor Quantum Heterostructures." Physics Today 45, no. 10 (October 1992): 36–43. http://dx.doi.org/10.1063/1.881342.

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7

Boschker, H., and J. Mannhart. "Quantum-Matter Heterostructures." Annual Review of Condensed Matter Physics 8, no. 1 (March 31, 2017): 145–64. http://dx.doi.org/10.1146/annurev-conmatphys-031016-025404.

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8

Wu, Jiazhen, Fucai Liu, Masato Sasase, Koichiro Ienaga, Yukiko Obata, Ryu Yukawa, Koji Horiba, et al. "Natural van der Waals heterostructural single crystals with both magnetic and topological properties." Science Advances 5, no. 11 (November 2019): eaax9989. http://dx.doi.org/10.1126/sciadv.aax9989.

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Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

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Малевская, А. В., Н. А. Калюжный, С. А. Минтаиров, Р. А. Салий, Д. А. Малевский, М. В. Нахимович, В. Р. Ларионов, П. В. Покровский, М. З. Шварц, and В. М. Андреев. "Высокоэффективные (EQE=37.5%) инфракрасные (850 нм) светодиоды с брэгговским и зеркальным отражателями." Физика и техника полупроводников 55, no. 12 (2021): 1218. http://dx.doi.org/10.21883/ftp.2021.12.51709.9711.

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Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm2 have been fabricated.

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GRESHNOV, A. A., E. N. KOLESNIKOVA, and G. G. ZEGRYA. "SPECTRUM OF CARRIERS AND OPTICAL PROPERTIES OF 2D HETEROSTRUCTURES IN TILTED MAGNETIC FIELD." International Journal of Nanoscience 02, no. 06 (December 2003): 401–9. http://dx.doi.org/10.1142/s0219581x03001498.

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The structure and features of spatially-confined states in the presence of a tilted magnetic field are theoretically investigated. The electron states in single- and double-quantum wells are described using the variational method. It is shown that the finite ratio of magnetic length to the width of heterostructure could not be neglected in the strong tilted magnetic field. The electronic structure of broken-gap heterostructures is considered similar to the case of usual double-quantum-well with the high narrow barrier. It is shown that tilted magnetic field can eliminate the strong coupling between two degenerated electron states or those of the electron and hole. The existence of such an effect is in accordance with cyclotron resonance studies of InAs / GaSb heterostructures.

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Dissertations / Theses on the topic "Quantum heterostructures"

1

Ko, D. Y. K. "Quantum tunnelling in heterostructures." Thesis, University of Exeter, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384673.

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Martin, Robert W. "Quantum magnetotransport in strained layer heterostructures." Thesis, University of Oxford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315751.

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Dhillon, S. S. "Terahertz intersubband electroluminescence from quantum cascade heterostructures." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598519.

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Mid-infrared quantum cascade lasers (QCLs) have been extensively developed since their realisation in 1994, with a spectral range covered from 3.4μm (88THz) to 24μm (12.5THz). This is a direct result of advances in molecular beam epitaxy and band-structure engineering. QCLs are fabricated from multi-quantum well semiconductor heterostructures in which an appropriate engineering of the thickness and composition of the semiconductor layers adjusts the intersubband transition energies, offering considerable design flexibility of the band profile. By application of a suitable electric field and stacking together successive active regions, each injected electron cascades through the device, generating a number of photons. QCLs have shown considerable advances in performance with high powers and room temperature operation demonstrated. Extension of this quantum cascade scheme to the far-infrared, or terahertz (THz) range, is now being investigated, where the lack of sources remains acute. Specifically, operation is sought at energies smaller than the characteristic LO phonon energy of the semiconductor material, where currently no lasing has been shown (<36meV, 9 THz). The dynamics of this spectral range, however, are considerably different to those in the mid-infrared. LO phonon emission is effectively forbidden for subband spacings less than the phonon energy but increases in electron-electron scattering are expected to dominate. Although THz electroluminescence has been shown from cascade structures, systematic investigations into key parameters have not been reported. This dissertation reports a comprehensive study of THz electroluminescence from n-type A1GaAs/GaAs quantum cascade emitters as a basis for understanding the radiative and scattering mechanisms that occur in this spectral range, forming the foundations of the development of a THz semiconductor laser. The electroluminescence was correlated thoroughly with band structure calculations, along with the structural and electrical properties of the samples. The many features observed in the far-infrared were characterised, with the intersubband peaks investigated extensively to confirm their origin.

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Smith, Ainsley H. "Quantum confined states in cylindrical nanowire heterostructures." DigitalCommons@Robert W. Woodruff Library, Atlanta University Center, 2007. http://digitalcommons.auctr.edu/dissertations/2364.

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We present an investigation of quantum confinement effects in nanowire heterostructures through the use of an effective-mass model with a band-offset induced potential barrier. The characteristic size of microelectronics is rapidly approaching the nanometer scale and because of this, nanostructure based devices in the field of nanomaterial research is continually being emphasized. The quantum confinement effect exhibited by the nanowire is the most interesting in one-dimensional nanostructures. Potential applications for the nanowire include its use in the fabrication of high performance devices such as the p — n junction diode, the p-channel or n-channel coaxial gated field effect transistor, and the complimentary field effect transistors, to name a few. In the fabrication of such devices, a doping process is used in order to supply free carriers. This process involves introducing doped impurities which unfortunately causes difficulties. These difficulties are characterized by a marked decrease in the mobility of the aforementioned carriers and include the scattering of the free carriers. To remedy these problems a novel doping mechanism has been proposed. It involves the use of a radial heterojunction in a core-shell nanowire where it has been suggested that one can dope impurities in the shell and inject free carriers to the core or vice versa. This separation of free carriers reduces their scattering rate and improves their mobility, both preferred properties for high-speed devices. A better understanding of the heterojunction under strong cylindrical confinement is important to guide the future fabrication of nanowire-based high-speed devices. In order to achieve this, the question as to whether the band offset evolves with the size of the nanowire needs to be addressed. The inquiry into the relationship between band offset evolution and nanowire size led us to employ an effective-mass model with a band-offset induced potential barrier to study the band structure of carriers in cylindrical core-shell and core-multishell nanowires. Quantum confined states and band alignment effects are found to be dependent upon the height of the potential barrier, the core-shell radius ratio, and the diameter of the quantum wire. The subband charge densities are studied for clarifying the quantum confinement. By numerically solving the effective-mass model we were able to provide an interpretation of experimental observations on carrier accumulation and one-dimensional ballistic transport in Ge-Si core-shell nanowire heterostructures. The model serves as the continuum limit to the first-principles simulation approach.

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Torresani, Patrick. "Hole quantum spintronics in strained germanium heterostructures." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY040/document.

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Le travail exposé dans cette thèse de doctorat présente des expériences à basse température dans le domaine de la spintronique quantique sur des hétérostructures à base de germanium. Tout d’abord, les avantages attendus du germaniumpour la spintronique quantique sont exposés, en particulier la faible interaction hyperfine et le fort couplage spin-orbite théoriquement prédits dans le Ge. Dans un second chapitre, la théorie des boites quantiques et systèmes à double boite sont détaillés, en se focalisant sur les concepts nécessaires à la compréhension des expériences décrites plus tard, c’est-à-dire les effets de charge dans les boites quantiques et double boites, ainsi que le blocage de spin de Pauli. Le troisième chapitre s’intéresse à l’interaction spin-orbite. Son origine ainsi que ses effets sur les diagrammes d’énergie de bande sont discutés. Ce chapitre se concentre ensuite sur les conséquences de l’interaction spin-orbite spécifiques aux gaz bidimensionnels de trous dans des hétérostructures de germanium, c’est-à-dire l’interaction spin-orbite Rashba, le mécanisme de relaxation de spin D’Yakonov-Perel ainsi que l’antilocalisation faible.Le chapitre quatre présente des mesures effectuées sur des nanofils coeur coquillede Ge/Si. Dans ces nanofils une boite quantique se forme naturellement et celui-ci est étudié. Un système à double boite quantiques est ensuite formé par utilisation de grilles électrostatiques, révélant ainsi du blocage de spin de Pauli.Dans le cinquième chapitre sont détaillés des mesures demagneto-conductance de gas de trous bidimensionnels dans des hétérostructures de Ge/SiGe contraints dont le puit quantique se situe à la surface. Ces mesuresmontrent de l’antilocalisation faible. Les temps de transport caractéristiques sont extraits ainsi que l’énergie de séparation des trous 2D par ajustement de courbe de la correction à la conductivité due à l’antilocalisation. De plus, les mesures montrent une suppression de l’antilocalisation par un champ magnétique parallèle au puit quantique. Cet effet est attribué à la rugosité de surface ainsi qu’à l’occupation virtuelle de sous-bandes inoccupées.Finalement, le chapitre six présente des mesures de quantisation de la conductancedans des hétérostructures de Ge/SiGe contraints dont le puit quantique est enterré. Tout d’abord, l’hétérostructure est caractérisée grâce à des mesures de magneto-conductance dans une barre de Hall. Ensuite, un second échantillon dessiné spécialement pour la réalisation de points de contact quantiques est mesuré. Celui-ci montre des marches de conductance. La dépendance en champ magnétique de ces marches est mesurée, permettant ainsi une extraction du facteur gyromagnétique de trous lourds dans du germanium
This thesis focuses on low temperature experiments in germaniumbased heterostructure in the scope of quantumspintronic. First, theoretical advantages of Ge for quantum spintronic are detailed, specifically the low hyperfine interaction and strong spin orbit coupling expected in Ge. In a second chapter, the theory behind quantum dots and double dots systems is explained, focusing on the aspects necessary to understand the experiments described thereafter, that is to say charging effects in quantum dots and double dots and Pauli spin blockade. The third chapter focuses on spin orbit interaction. Its origin and its effect on energy band diagrams are detailed. This chapter then focuses on consequences of the spin orbit interaction specific to two dimensional germaniumheterostructure, that is to say Rashba spin orbit interaction, D’Yakonov Perel spin relaxation mechanism and weak antilocalization.In the fourth chapter are depicted experiments in Ge/Si core shell nanowires. In these nanowire, a quantumdot formnaturally due to contact Schottky barriers and is studied. By the use of electrostatic gates, a double dot system is formed and Pauli spin blockade is revealed.The fifth chapter reports magneto-transport measurements of a two-dimensional holegas in a strained Ge/SiGe heterostructure with the quantum well laying at the surface, revealing weak antilocalization. By fitting quantumcorrection to magneto-conductivity characteristic transport times and spin splitting energy of 2D holes are extracted. Additionally, suppression of weak antilocalization by amagnetic field parallel to the quantum well is reported and this effect is attributed to surface roughness and virtual occupation of unoccupied subbands.Finally, chapter number six reportsmeasurements of quantization of conductance in strained Ge/SiGe heterostructure with a buried quantumwell. First the heterostructure is characterized by means ofmagneto-conductance measurements in a Hall bar device. Then another device engineered specifically as a quantum point contact is measured and displays steps of conductance. Magnetic field dependance of these steps is measured and an estimation of the g-factor for heavy holes in germanium is extracted

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Harrison, Paul Anthony. "Resonant tunnelling and luminescence in coupled quantum wells." Thesis, University of Nottingham, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.363933.

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Wee, Siew Fong. "Interdiffusion of semiconductor alloy heterostructures." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/844156/.

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This thesis is concerned with a quantitative study of intermixing in GaAs/AlGaAs and ZnSe/ZnCdSe single quantum well semiconductor structures. In this study, a method of iterative isothermal anneals and photoluminescence used to characterize this phenomenon has enabled the evolution of the diffusion coefficients for the interdiffusion process with anneal time to be followed. The blue-shift emissions arising from this method are predicted by a model based on Fick's law of diffusion. This model is developed in an attempt to relate the energy shift that is observed experimentally to the diffusion length. The mixing is modelled using an error function expression to solve the diffusion equation so as to describe the variation in well shape which is attributed to compositional disordering induced during thermal processing. Using this approach, where evidence of intermixing was monitored, the emission would be expected to shift measurably. Data has been taken to cover a wide temperature range to establish values for the activation energy EA. From this data, it has been found that the diffusion coefficients at various temperatures are thermally activated with an energy of 3.6 +/- 0.2 eV in GaAs/AlGaAs. The data is compared with the available literature data taken under a wide range of experimental conditions. We show that despite the range of activation energies quoted in the literature all the data appears to be consistent with a single activation energy. Departures from the 'mean' value are ascribed to experimental uncertainties in determining the diffusion coefficients for example, to fluctuations in the composition of the material, to techniques used, or to a wide range of perturbations. Photoluminescence observations on ZnSe/ZnCdSe show that an improvement in the optical quality of these quantum well structures was found for anneals at temperatures (~500°C). A value of EA = 2.9 +/- 0.3 eV was derived from the experiments for the interdiffusion process over a 250 K temperature range and four decades of interdiffusion coefficient. The interdiffusion process of both these systems was inferred to be Fickian with no dependence on alloy composition or strain.

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Chung, Sung-Yong. "Si/SiGe heterostructures materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors /." Columbus, Ohio : Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1132244278.

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9

Malins, David Brendan. "Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures /." St Andrews, 2007. http://hdl.handle.net/10023/404.

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Malins, David B. "Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures." Thesis, University of St Andrews, 2008. http://hdl.handle.net/10023/404.

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The quantum confined Stark effect (QCSE) and ultrafast absorption dynamics near the bandedge have been investigated in p-i-n waveguides comprising quantum confined heterostructures grown on GaAs substrates, for emission at 1.3um. The materials are; isolated InAs/InGaAs dot-in-a-well (DWELL) quantum dots (QD), bilayer InAs quantum dots and GaInNAs multiple quantum wells (MQW). The focus was to investigate these dynamics in a planar waveguide geometry, for the purpose of large scale integration in optical systems. Initial measurements of the QCSE using photocurrent measurements showed a small shift for isolated QDs whilst a significant shift of 40nm (at 1340nm) was demonstrated for bilayer dots, comparable to that of GaInNAs MWQ (30nm at 1300nm). These are comparable to InP based quaternary multiple quantum wells used in modulator devices. With the use of a broadband continuum source the isolated quantum dots exhibit both a small QCSE (15nm at 1280nm) and minimal broadening which is desirable for saturable absorbers used in monolithic modelocked semiconductor lasers (MMSL). A robust experimental set-up was developed for characterising waveguide modulators whilst the electroabsorption and electro-refraction was calculated (dn=1.5x10â »Â³) using the Kramers-Kronig dispersion relation. Pump probe measurements were performed at room temperature using 250fs pulses from an optical parametric oscillator (OPO) on the three waveguide samples. For the isolated QDs ultrafast absorption recovery was recorded from 62ps (0V) to 700fs (-10V and the shortest times shown to be due to tunneling. Additionally we have shown good agreement of the temperature dependence of these dots and the pulse width durations from a modelocked semiconductor laser using the same material. Bilayer QDs are shown to exhibit ultrafast absorption recovery from 119ps (0V) to 5ps (-10V) offering potential for applications as modelocking elements. The GaInNAs multiple quantum wells show absorption recovery of 55ps (0V), however under applied reverse bias they exhibit long lived field screening transients. These results are explained qualitatively by the spatial separation of electrons and holes at heterobarrier interfaces.

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Books on the topic "Quantum heterostructures"

1

A, Kochelap V., and Stroscio Michael A. 1949-, eds. Quantum heterostructures: Microelectronics and optoelectronics. Cambridge: Cambridge University Press, 1999.

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Leo, Karl. Dynamics of coherent optical excitations in semiconductor heterostructures. Aachen: Verlag Shaker, 1993.

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Mandal, Arjun, and Subhananda Chakrabarti. Impact of Ion Implantation on Quantum Dot Heterostructures and Devices. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4334-5.

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Ivchenko, Eougenious L. Superlattices and Other Heterostructures: Symmetry and Optical Phenomena. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997.

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Sengupta, Saumya, and Subhananda Chakrabarti. Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-5702-1.

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Ivchenko, E. L. Superlattices and other heterostructures: Symmetry and optical phenomena. Berlin: Springer-Verlag, 1995.

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Ivchenko, E. L. Superlattices and other heterostructures: Symmetry and optical phenomena. 2nd ed. Berlin: Springer, 1997.

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Vasʹko, F. T. Ėlektronnye sostoi͡a︡nii͡a︡ i opticheskie perekhody v poluprovodnikovykh geterostrukturakh. Kiev: Nauk. dumka, 1993.

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J, Paul D., ed. Silicon quantum integrated circuits: Silicon-germanium heterostructure devices : basics and realisations. Berlin: Springer, 2005.

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Quantum Dot Heterostructures. Wiley, 1999.

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Book chapters on the topic "Quantum heterostructures"

1

Pearsall, Thomas P. "Free Electron Behavior in Semiconductor Heterostructures." In Quantum Photonics, 57–109. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55144-9_3.

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Bastard, G. "Electronic States in Semiconductor Heterostructures." In Physics and Applications of Quantum Wells and Superlattices, 21–42. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4684-5478-9_2.

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Ohno, Hideo. "Ferromagnetic III–V Semiconductors and Their Heterostructures." In Semiconductor Spintronics and Quantum Computation, 1–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-05003-3_1.

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Mendez, E. E. "Applications of Resonant Tunneling in Semiconductor Heterostructures." In Interfaces, Quantum Wells, and Superlattices, 227–42. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1045-7_13.

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Etienne, Bernard. "Electron Conduction and Quantum Phenomena in 2D Heterostructures." In Advances in Quantum Phenomena, 159–83. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1975-1_10.

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Guerrero, A. H. "Exchange Energy Interactions in Quantum Well Heterostructures." In Computational Electronics, 251–54. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_51.

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Barker, J. R., S. Collins, D. Lowe, and S. Murray. "Theory of Transient Quantum Transport in Heterostructures." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 449–52. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_100.

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Yurchenko, L. V., and V. B. Yurchenko. "Semiquantal Dynamics of Electrons in Quantum Heterostructures." In Heterostructure Epitaxy and Devices — HEAD’97, 83–86. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_12.

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Ustinov, V. M. "Semiconductor Quantum Dot Heterostructures (Growth and Applications)." In Nanostructured Films and Coatings, 41–54. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4052-2_4.

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Chang, L. L. "Materials and Physics Aspects of Quantum Heterostructures." In NATO ASI Series, 83–115. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3686-8_7.

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Conference papers on the topic "Quantum heterostructures"

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Makowski, Jan D., Brady D. Anderson, Wing S. Chan, Mika J. Saarinen, Christopher J. Palstrøm, and Joseph J. Talghader. "Band-Gap Tuning with Mechanical Heterostructures." In International Quantum Electronics Conference. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/iqec.2009.ituj7.

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Dvurechenskii, Anatoly, Andrew Yakimov, Aigul Zinovieva, Aleksei Nenashev, and Vladimir Zinovev. "PHYSICS PHENOMENA IN SILICON BASED QUANTUM DOT STRUCTURES FOR NANOELECTRONICS, NANOPHOTONIC AND SPINTRONIC." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1548.silicon-2020/26-29.

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Majedi, Hamed. "Nonlinear quantum photonics on graphene/silicons heterostructures." In Photonics for Quantum 2020. SPIE, 2021. http://dx.doi.org/10.1117/12.2611215.

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Adinehloo, Davoud. "Temperature-induced valley polarization in WS2 heterostructures." In Photonics for Quantum 2020. SPIE, 2021. http://dx.doi.org/10.1117/12.2611888.

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Malov, Y. A. "Heterostructures As a Quantum Optical Klistron." In EQEC'96. 1996 European Quantum Electronic Conference. IEEE, 1996. http://dx.doi.org/10.1109/eqec.1996.561643.

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Chokomakoua, J. C. "Quantum Hall Ferromagnetism In InSb Heterostructures." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994217.

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Barettin, Daniele, Matthias Auf der Maur, Alessandro Pecchia, and Aldo di Carlo. "Realistic models of quantum-dot heterostructures." In 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014). IEEE, 2014. http://dx.doi.org/10.1109/nusod.2014.6935327.

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LEDENTSOV, Nikolay N. "QUANTUM DOT HETEROSTRUCTURES FOR SEMICONDUCTOR DEVICES." In NANOCON 2019. TANGER Ltd., 2020. http://dx.doi.org/10.37904/nanocon.2019.8446.

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Zakharova, A., S. T. Yen, and K. A. Chao. "Quantum computer on InAs/GaSb heterostructures." In SPIE Proceedings, edited by Yuri I. Ozhigov. SPIE, 2003. http://dx.doi.org/10.1117/12.517922.

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Popp, Johannes, Michael Haider, Martin Franckie, Jerome Faist, and Christian Jirauschek. "Numerical Optimization of Quantum Cascade Detector Heterostructures." In 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2020. http://dx.doi.org/10.1109/nusod49422.2020.9217784.

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Reports on the topic "Quantum heterostructures"

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Davis, Robert F. Heterostructures for Increased Quantum Efficiency in Nitride LEDs. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/1177775.

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Pandey, Lakshmi N., and Thomas F. George. Intersubband Transitions in Quantum-Well Heterostructures with Delta-Doped Barriers. Fort Belvoir, VA: Defense Technical Information Center, July 1992. http://dx.doi.org/10.21236/ada252849.

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Iyer, Shanthi. Optical Studies Of GaAsSbN Alloys and Their Quantum Well Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, July 2004. http://dx.doi.org/10.21236/ada424998.

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Stockman, Mark I., Lakshmi N. Pandey, and Thomas F. George. Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, December 1990. http://dx.doi.org/10.21236/ada229959.

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Kim, Philip. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada616377.

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Nakotte, Tom. Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures. Office of Scientific and Technical Information (OSTI), April 2020. http://dx.doi.org/10.2172/1614831.

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Stockman, Mark I., Lakshmi N. Pandey, and Thomas F. George. Reply to Comment on 'Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures' by A. A. Grinberg and S. Luryi. Fort Belvoir, VA: Defense Technical Information Center, June 1991. http://dx.doi.org/10.21236/ada237468.

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Mei-Yin Chou. Quantum Monte-Carlo Study of Electron Correlation in Heterostructure Quantum Dots. Office of Scientific and Technical Information (OSTI), November 2006. http://dx.doi.org/10.2172/894945.

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Hayduk, Michael J., Mark F. Krol, and Raymond K. Boncek. Heterostructure Quantum Confined Stark Effect Electrooptic Modulators Operating at 938 nm. Fort Belvoir, VA: Defense Technical Information Center, December 1993. http://dx.doi.org/10.21236/ada279342.

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Measurements of Spin Dynamics Reveal that Shape of Excitons in Quantum Rod Heterostructures Changes with Size (Fact Sheet). Office of Scientific and Technical Information (OSTI), June 2012. http://dx.doi.org/10.2172/1045736.

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