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Author: Grafiati

Published: 7 September 2023

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1

Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.

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Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.

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2

Zhang, X. H., Soo Jin Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, S. F. Yu, and X. W. Sun. "Fabrication and Optical Properties of ZnO Quantum Dots." Advanced Materials Research 31 (November 2007): 71–73. http://dx.doi.org/10.4028/www.scientific.net/amr.31.71.

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Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and timeintegrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.

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3

Yazicioglu, Deniz, Sebastian Gutsch, and Margit Zacharias. "(Invited) Size Controlled Silicon Quantum Dots: Understanding Basic Properties and Electronic Applications." ECS Meeting Abstracts MA2022-01, no. 20 (July 7, 2022): 1077. http://dx.doi.org/10.1149/ma2022-01201077mtgabs.

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The fabrication of SiOx/SiO2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots. The layered-arranged Si quantum dots represent a model system to systematically study the photonic and electronic properties of indirect gap quantum dots prepared in a CMOS compatible way. Hence, the model system is used to understand the interplay of absorption and recombination, the carrier kinetics and the electronic transport properties for matrix embedded Si quantum dots. The interplay of radiative and non-radiative recombination will be discussed for high quantum yield. Doping of Si quantum dots and the respective quantification is at the limit of the respective high resolution techniques but clearly show the effect of self-purification. The effect of an externally applied electric field on exciton separation and carrier transport will be discussed..

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4

Zhang, X. H., S. J. Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, S. P. Lau, and S. F. Yu. "Exciton radiative lifetime in ZnO quantum dots embedded in SiOx matrix." Applied Physics Letters 88, no. 22 (May 29, 2006): 221903. http://dx.doi.org/10.1063/1.2207848.

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5

Huang, Jie, Jian Liang Jiang, and Abdelkader Sabeur. "Application of Finite Difference Method in Modeling Quantum Dot Superlattice Silicon Tandem Solar Cell." Advanced Materials Research 898 (February 2014): 249–52. http://dx.doi.org/10.4028/www.scientific.net/amr.898.249.

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In this paper we propose an effective method to model quantum dot superlattice silicon tandem solar cell. The Schrödinger equation is solved through finite difference method (FDM) to calculate energy band of three-dimensional silicon quantum dots embedded in the matrix of SiO2 and Si3N4.We simulate the quantum dot superlattice as regularly spaced array of equally sized cubic dots in respective matrix. For simplicity, we consider only one period of the structure in calculation. From the result, the effects of matrix material, dot size and inter-dot distance on the bandgap are obtained.

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6

Kuryliuk, Vasyl, Andriy Nadtochiy, Oleg Korotchenkov, Chin-Chi Wang, and Pei-Wen Li. "A model for predicting the thermal conductivity of SiO2–Ge nanoparticle composites." Physical Chemistry Chemical Physics 17, no. 20 (2015): 13429–41. http://dx.doi.org/10.1039/c5cp00129c.

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A simple and time consuming theoretical model that predicts the thermal conductivity of SiO₂ layers with embedded Ge quantum dots is proposed. It takes into account the structural relaxation in the SiO₂ matrix, deviation in mass density of the dots compared to the surrounding matrix and strains associated with the dots.

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7

Yi, Dong Kee. "Synthesis and Applications of Crack-Free SiO2 Monolith Containing CdSe/ZnS Quantum Dots as Passive Lighting Sources." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4538–42. http://dx.doi.org/10.1166/jnn.2008.ic46.

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A reverse microemulsion technique has been used to synthesize quantum dot nanocomposites within a SiO2 surface coating. With this approach, the unique optical properties of the CdSe/ZnS quantum dots were preserved. CdSe/ZnS/SiO2 nanoparticles were homogeneously distributed in a tetramethyl orthosilicate ethanol solution and gelation process was initiated within a 10 min, and was left over night at room temperature and dried fully to achieve a solid SiO2 monolith. The resulting monolith was transparent and fluorescent under ultraviolet (UV) lamp. Moreover the monolith produced was crack-free. Further studies on the photo stability of the monolith were performed using a high power UV LED device. Remarkably, quantum dots in the SiO2 monolith showed better photo stability compared with those dispersed in a polymer matrix.

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8

Samanta, Arup, and Debajyoti Das. "Effect of RF power on the formation and size evolution of nC-Si quantum dots in an amorphous SiOx matrix." Journal of Materials Chemistry 21, no. 20 (2011): 7452. http://dx.doi.org/10.1039/c1jm10443h.

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9

Xu, C. S., Y. C. Liu, R. Mu, C. Muntele, and D. Ila. "Structural and optical properties of GaAs quantum dots formed in SiO2 matrix." Materials Letters 61, no. 14-15 (June 2007): 2875–78. http://dx.doi.org/10.1016/j.matlet.2007.01.073.

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10

Slunjski, R., P. Dubček, N. Radić, S. Bernstorff, and B. Pivac. "Structure and transport properties of Ge quantum dots in a SiO2 matrix." Journal of Physics D: Applied Physics 48, no. 23 (May 14, 2015): 235301. http://dx.doi.org/10.1088/0022-3727/48/23/235301.

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11

Park, Youngbin, Shinho Kim, Jihyun Moon, Jung Chul Lee, and Yangdo Kim. "Investigation of Bonding Characteristics Between Si Quantum Dots and a SiO2 Matrix." Journal of Nanoscience and Nanotechnology 12, no. 2 (February 1, 2012): 1444–47. http://dx.doi.org/10.1166/jnn.2012.4676.

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12

PANCHAL, A. K., D. K. RAI, M. MATHEW, and C. S. SOLANKI. "SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW." Nano 04, no. 05 (October 2009): 265–79. http://dx.doi.org/10.1142/s1793292009001770.

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This paper reviews research works carried out on silicon quantum dots ( Si -QDs) embedded in the silicon nitride ( SiN x) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN x as a dielectric compared to silicon dioxide ( SiO 2) for Si -QDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal–insulator–semiconductor (MIS) structure, with their electrical characterization like capacitance–voltage (C–V) and current–voltage (I–V) measurements are presented.

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13

Chakdar, Dipankar, Abubakkar Siddik, Nikita Ghosh, Gautam Gope, and Prabir Kumar Haldar. "Enhancement of Luminescence Behaviour of Colloidal ZnO Quantum Dots Coated with SiO2 Irradiated by Ni+7 Ion." Advanced Science, Engineering and Medicine 12, no. 2 (February 1, 2020): 278–83. http://dx.doi.org/10.1166/asem.2020.2497.

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ZnO quantum dots of average size 10 nm are embedded in a matrix (polyvinyl alcohol (PVA)) following chemical route. They are irradiated by 100 MeV Ni7+ ion beam with fluences 1 × 1011, 3 × 1011, 1 × 1012 and 3 × 1012 ions/cm2. The optical absorption edge of irradiated quantum dots reveal negligible red shift with an increase in fluences with respect to that of unirradiated (virgin) ones. This fact clearly indicates no significant change in particle diameter under ion irradiation and is confirmed by high resolution transmission electron microscopy (TEM). AFM study also reveals the r.m.s surface roughness of the particles. It has also been observed that irradiated quantum dots produce similar type of photo luminescence and electroluminescence like virgin samples but the emission intensity increases remarkably after irradiation due to creation of large numbers oxygen vacancies by the ion beam.

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14

Tong, Wanzhe, Dong Fang, Chongxi Bao, Songlin Tan, Yichun Liu, Fengxian Li, Xin You, et al. "Enhancing mechanical properties of copper matrix composite by adding SiO2 quantum dots reinforcement." Vacuum 195 (January 2022): 110682. http://dx.doi.org/10.1016/j.vacuum.2021.110682.

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15

Aliberti, P., S. K. Shrestha, R. Teuscher, B. Zhang, M. A. Green, and G. J. Conibeer. "Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications." Solar Energy Materials and Solar Cells 94, no. 11 (November 2010): 1936–41. http://dx.doi.org/10.1016/j.solmat.2010.06.024.

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16

Maikhuri, Deepti, S. P. Purohit, and K. C. Mathur. "Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix." AIP Advances 2, no. 1 (March 2012): 012160. http://dx.doi.org/10.1063/1.3693405.

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17

Panigrahi, Shrabani, Ashok Bera, and Durga Basak. "Ordered dispersion of ZnO quantum dots in SiO2 matrix and its strong emission properties." Journal of Colloid and Interface Science 353, no. 1 (January 2011): 30–38. http://dx.doi.org/10.1016/j.jcis.2010.09.055.

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18

Sharma, Prashant K., Ranu K. Dutta, Manvendra Kumar, Prashant K. Singh, and Avinash C. Pandey. "Luminescence studies and formation mechanism of symmetrically dispersed ZnO quantum dots embedded in SiO2 matrix." Journal of Luminescence 129, no. 6 (June 2009): 605–10. http://dx.doi.org/10.1016/j.jlumin.2009.01.004.

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19

Tsang, W. M., V. Stolojan, B. J. Sealy, S. P. Wong, and S. R. P. Silva. "Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation." Ultramicroscopy 107, no. 9 (September 2007): 819–24. http://dx.doi.org/10.1016/j.ultramic.2007.02.013.

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20

Knaup, Jan M., Márton Vörös, Peter Déak, Adam Gali, Thomas Frauenheim, and Efthimios Kaxiras. "Annealing simulations to determine the matrix interface structure of SiC quantum dots embedded in SiO2." physica status solidi (c) 7, no. 2 (February 2010): 407–10. http://dx.doi.org/10.1002/pssc.200982428.

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21

Chu, Tien Dung, and Hoang Nam Nguyen. "Synthesis and Characteristics of Multifunctional Magneto-luminescent Nanoparticles by an Ultrasonic Wave-assisted Stӧber Method." Journal of Physical Science 32, no. 3 (November 25, 2021): 75–87. http://dx.doi.org/10.21315/jps2021.32.3.6.

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Multifunctional magneto-luminescent nanoparticles (NPs) were synthesised by an ultrasonic wave-assisted Stöber method. The multifunctional NPs are composed of magnetic NPs (Fe3O4) and photoluminescent quantum dots (QDs) (ZnS:Mn) in amorphous silica (SiO2) matrix, which was confirmed by X-ray diffraction, Raman scattering spectroscopy, and transmission electron microscopy (TEM). The multifunctional NPs have high saturation magnetisation at room temperature simultaneously with strong photoluminescence (PL) in visible light, which is promising for biomedical applications.

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22

Chen, Xiaobo, and Peizhi Yang. "Preparation of B-doped Si quantum dots embedded in SiNx films for Si quantum dot solar cells." International Journal of Modern Physics B 32, no. 02 (January 16, 2018): 1850003. http://dx.doi.org/10.1142/s0217979218500030.

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Silicon quantum dots (Si-QDs) embedded B-doped SiN[Formula: see text] films were fabricated by magnetron co-sputtering. The effects of B content on the structural, optical and electrical properties of the films were studied. The study found that the amount of B dopant has no significant effect on the crystallization characteristics of the films. B atoms may be doped in the Si-QDs or exist in the silicon nitride or the interface between Si-QDs and the matrix. PL intensity increases with increasing B content, but increases at first and then decreases. The conductivity as a function of the dopant concentration increases at first from a value of 2.71 × 10[Formula: see text] S/cm to 5.83 × 10[Formula: see text] S/cm until 0.9 at.% and then decreases. By employing B-doped Si-QDs films, Si-QDs/c-Si heterojunction solar cells were fabricated and the effect of B doping concentration on the photovoltaic properties was studied. It was found that, with the increase of B doping amount, the photovoltaic performance is improved, when the B doping amount is 0.9 at.%, the efficiency reaches the highest value of 4.26%.

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23

Zatsepin, A. F., and D. Yu Biryukov. "Temperature dependence of photoluminescence of semiconductor quantum dots upon indirect excitation in a SiO2 dielectric matrix." Physics of the Solid State 57, no. 8 (August 2015): 1601–6. http://dx.doi.org/10.1134/s1063783415080363.

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24

Vörös, Márton, Adam Gali, Efthimios Kaxiras, Thomas Frauenheim, and Jan M. Knaup. "Identification of defects at the interface between 3C-SiC quantum dots and a SiO2 embedding matrix." physica status solidi (b) 249, no. 2 (December 23, 2011): 360–67. http://dx.doi.org/10.1002/pssb.201100527.

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25

Nicoara, Adrian Ionut, Mihai Eftimie, Mihail Elisa, Ileana Cristina Vasiliu, Cristina Bartha, Monica Enculescu, Mihaela Filipescu, et al. "Nanostructured PbS-Doped Inorganic Film Synthesized by Sol-Gel Route." Nanomaterials 12, no. 17 (August 30, 2022): 3006. http://dx.doi.org/10.3390/nano12173006.

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IV-VI semiconductor quantum dots embedded into an inorganic matrix represent nanostructured composite materials with potential application in temperature sensor systems. This study explores the optical, structural, and morphological properties of a novel PbS quantum dots (QDs)-doped inorganic thin film belonging to the Al2O3-SiO2-P2O5 system. The film was synthesized by the sol-gel method, spin coating technique, starting from a precursor solution deposited on a glass substrate in a multilayer process, followed by drying of each deposited layer. Crystalline PbS QDs embedded in the inorganic vitreous host matrix formed a nanocomposite material. Specific investigations such as X-ray diffraction (XRD), optical absorbance in the ultraviolet (UV)-visible (Vis)-near infrared (NIR) domain, NIR luminescence, Raman spectroscopy, scanning electron microscopy–energy dispersive X-ray (SEM-EDX), and atomic force microscopy (AFM) were used to obtain a comprehensive characterization of the deposited film. The dimensions of the PbS nanocrystallite phase were corroborated by XRD, SEM-EDX, and AFM results. The luminescence band from 1400 nm follows the luminescence peak of the precursor solution and that of the dopant solution. The emission of the PbS-doped film in the NIR domain is a premise for potential application in temperature sensing systems.

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26

Mangold, H. Moritz, Helmut Karl, and Hubert J. Krenner. "Site-Selective Ion Beam Synthesis and Optical Properties of Individual CdSe Nanocrystal Quantum Dots in a SiO2 Matrix." ACS Applied Materials & Interfaces 6, no. 3 (January 27, 2014): 1339–44. http://dx.doi.org/10.1021/am404227x.

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27

Di, D., I. Perez-Wurfl, G. Conibeer, and M. A. Green. "Formation and photoluminescence of Si quantum dots in SiO2/Si3N4 hybrid matrix for all-Si tandem solar cells." Solar Energy Materials and Solar Cells 94, no. 12 (December 2010): 2238–43. http://dx.doi.org/10.1016/j.solmat.2010.07.018.

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28

Podkolodnaya, Yuliya A., Alina A. Kokorina, Tatiana S. Ponomaryova, Olga A. Goryacheva, Daniil D. Drozd, Mikhail S. Khitrov, Lingting Huang, Zhichao Yu, Dianping Tang, and Irina Yu Goryacheva. "Luminescent Composite Carbon/SiO2 Structures: Synthesis and Applications." Biosensors 12, no. 6 (June 6, 2022): 392. http://dx.doi.org/10.3390/bios12060392.

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Luminescent carbon nanostructures (CNSs) have attracted great interest from the scientific community due to their photoluminescent properties, structural features, low toxicity, and a great variety of possible applications. Unfortunately, a few problems hinder their further development. These include the difficulties of separating a mixture of nanostructures after synthesis and the dependence of their properties on the environment and the aggregate state. The application of a silica matrix to obtain luminescent composite particles minimizes these problems and improves optical properties, reduces photoluminescence quenching, and leads to wider applications. We describe two methods for the formation of silica composites containing CNSs: inclusion of CNSs into silica particles and their grafting onto the silica surface. Moreover, we present approaches to the synthesis of multifunctional particles. They combine the unique properties of silica and fluorescent CNSs, as well as magnetic, photosensitizing, and luminescent properties via the combination of functional nanoparticles such as iron oxide nanoparticles, titanium dioxide nanoparticles, quantum dots (QDs), and gold nanoclusters (AuNCs). Lastly, we discuss the advantages and challenges of these structures and their applications. The novelty of this review involves the detailed description of the approaches for the silica application as a matrix for the CNSs. This will support researchers in solving fundamental and applied problems of this type of carbon-based nanoobjects.

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29

Mikhaylov, A. N., D. I. Tetelbaum, V. A. Burdov, O. N. Gorshkov, A. I. Belov, D. A. Kambarov, V. A. Belyakov, V. K. Vasiliev, A. I. Kovalev, and D. M. Gaponova. "Effect of Ion Doping with Donor and Acceptor Impurities on Intensity and Lifetime of Photoluminescence from SiO2 Films with Silicon Quantum Dots." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 780–88. http://dx.doi.org/10.1166/jnn.2008.a067.

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Doping with donor and acceptor impurities is an effective way to control light emission originated from quantum-size effect in Si nanocrystals. Combined measurements of photoluminescence intensity and kinetics give valuable information on mechanisms of the doping influence. Phosphorus, boron, and nitrogen were introduced by ion implantation into Si+-implanted thermal SiO2 films either before or after synthesis of Si nanocrystals performed at Si excess of about 10 at.% and annealing temperatures of 1000 and 1100 °C. After the implantation of the impurity ions the samples were finally annealed at 1000 °C. It is found that, independently of ion kind, the ion irradiation (the first stage of the doping process) completely quenches the photoluminescence related to Si nanocrystals (peak at around 750 nm) and modifies visible luminescence of oxygen-deficient centers in the oxide matrix. The doping with phosphorus increases significantly intensity of the 750 nm photoluminescence excited by a pulse 337 nm laser for the annealing temperature of 1000 °C, while introduction of boron and nitrogen atoms reduces this emission for all the regimes used. In general, the effective lifetimes (ranging from 4 to 40 μs) of the 750 nm photoluminescence correlate with the photoluminescence intensity. Several factors such as radiation damage, influence of impurities on the nanocrystals formation, carrier-impurity interaction are discussed. The photoluminescence decay is dominated by the non-radiative processes due to formation or passivation of dangling bonds, whereas the intensity of photoluminescence (for excitation pulses much shorter than the photoluminescence decay) is mainly determined by the radiative lifetime. The influence of phosphorus doping on radiative recombination in Si quantum dots is analyzed theoretically.

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30

Dallali, Lobna, Sihem Jaziri, Jamal el Haskouri, Pedro Amorós, and Juan Martínez-Pastor. "Energy of excitons and acceptor–exciton complexes to explain the origin of ultraviolet photoluminescence in ZnO quantum dots embedded in a SiO2 matrix." Solid State Communications 151, no. 11 (June 2011): 822–25. http://dx.doi.org/10.1016/j.ssc.2011.03.024.

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31

Lingalugari, Murali, Evan Heller, Barath Parthasarathy, John Chandy, and Faquir Jain. "Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840006. http://dx.doi.org/10.1142/s0129156418400062.

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This paper presents an approach to enhance floating gate quantum dot nonvolatile random access memory (QDNVRAM) cells in terms of higher-speed and lower-voltage Erase not possible with conventional floating gate nonvolatile memories. It is achieved by directly accessing the floating gate layer with a Ge quantum dot access channel via an additional drain (D2) during the Erase and/or Write operation. Quantum mechanical simulations in GeOx-cladded Ge quantum dot layers functioning as the floating gate as well access channel to facilitate Erase and Write are presented. Experimental data on fabricated long channel nonvolatile random access memory cell with SiOx-cladded Si dots is presented. Quantum simulations show lower voltage operation for GeOx-cladded Ge QD floating gate than SiOx-cladded Si dots. The Erase time is orders of magnitude faster than flash and is comparable to competing NVRAMs.

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32

Makaino, Akinori, Yuta Tanaka, and Koichi Yamaguchi. "Molecular beam deposition of high-density InAs quantum dots on SiOx films." Japanese Journal of Applied Physics 58, SD (May 16, 2019): SDDF07. http://dx.doi.org/10.7567/1347-4065/ab0def.

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Baran, M., L. Khomenkova, N. Korsunska, T. Stara, M. Sheinkman, Y. Goldstein, J. Jedrzejewski, and E. Savir. "Investigation of aging process of Si–SiOx structures with silicon quantum dots." Journal of Applied Physics 98, no. 11 (December 2005): 113515. http://dx.doi.org/10.1063/1.2134887.

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Das, Debajyoti, and Arup Samanta. "Size effect on electronic transport in nC–Si/SiOx core/shell quantum dots." Materials Research Bulletin 47, no. 11 (November 2012): 3625–29. http://dx.doi.org/10.1016/j.materresbull.2012.06.051.

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35

Kumar, Sandeep, and Laxmi Kishore Sagar. "CdSe quantum dots in a columnar matrix." Chemical Communications 47, no. 44 (2011): 12182. http://dx.doi.org/10.1039/c1cc15633k.

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36

Sonawane, R. S., S. D. Naik, S. K. Apte, M. V. Kulkarni, and B. B. Kale. "CdS/CdSSe quantum dots in glass matrix." Bulletin of Materials Science 31, no. 3 (June 2008): 495–99. http://dx.doi.org/10.1007/s12034-008-0077-2.

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37

Kondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate." MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.

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ABSTRACTQuantum dot gate (QDG) field-effect transistors (FET) have shown three-state transfer characteristics. Quantum dot channel (QDC) field-effect transistors (FET) have exhibited fourstate ID-VG characteristics. This project aims at studying the effect of incorporating cladded quantum dot layers in the gate region of QDC-FET. Four-state characteristics are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot superlattice (QDSL) channel. QDSL is formed by an array of cladded quantum dots (such as SiOx-Si and GeOx-Ge). Multi-state FETs are needed in multi-valued logic (MVL) that can reduce the number of gates and transistors in digital circuits. The fabricated device showed the four-state characteristic (OFF, ‘I1’, ‘I2’, ON).

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38

Khan, Madihah, Alyxandra Thiessen, I. Teng Cheong, Sarah Milliken, and Jonathan G. C. Veinot. "Investigation of Silicon Nanoparticle-Polystyrene Hybrids." Alberta Academic Review 2, no. 2 (September 15, 2019): 49–50. http://dx.doi.org/10.29173/aar60.

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Current LED lights are created with quantum dots made of metals like selenium, tellurium, and cadmium which can be toxic. Silicon is used as a non-toxic substance and is the second most abundant element in the earth's crust. When silicon is prepared at a nanometer size, unique luminesce optical properties emerge that can be tuned using sized surface chemistry. Therefore, silicon nanoparticles can be used as an alternative emitter for LED lights. To produce hydride-terminated silicon nanoparticles we must synthesize the particles. Hydrogen silsesquioxane (HSQ) is processed at 1100 °C for one hour causing Si to cluster and form a SiO2 matrix, also known as the composite. The composite is then manually crushed in ethanol. The solution is further ground using glass beads, then filtered to get the composite powder. The final step is the HF etching. The hydride-terminated particles are then functionalized using three different methods to synthesize silicon nanoparticle-polystyrene hybrids, which determine the magnitude of luminosity and the quality of the hybrids. We spin coat each method and results were analyzed. Method 1 uses heat to functionalize hydride-terminated silicon nanoparticles with styrene. This process also causes styrene to attach to styrene to form a polystyrene chain. Method 1 gave a homogeneous mixture which yielded a consistent, bright and homogenous film. In method 2, dodecyl-terminated silicon nanoparticles are mixed with premade polystyrene. While this method gave better control of the amount of silicon nanoparticles inside the polymer hybrid, a homogeneous mixture was not created due to the different structures of polystyrene and dodecyl chains. Method 3 has dodecyl-terminated silicon with in-situ styrene polymerization. It generated a homogeneous mixture. The in-situ polymerization stabilizes the particles, allowing for brighter luminescence. Because of the stability and lower molecular weight, the mixture was easier to dissolve. We concluded that the different methods resulted in different polymer molecular weights and this created distinct properties between the polymer hybrids when spin-coating.

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39

Ding, Kaining, Urs Aeberhard, Oleksandr Astakhov, Uwe Breuer, Maryam Beigmohamadi, Stephan Suckow, Birger Berghoff, et al. "Defect passivation by hydrogen reincorporation for silicon quantum dots in SiC/SiOx hetero-superlattice." Journal of Non-Crystalline Solids 358, no. 17 (September 2012): 2145–49. http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.092.

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Luna-López, José Alberto, G. Garcia-Salgado, J. Carrillo-López, Dianeli E. Vázquez-Valerdi, A. Ponce-Pedraza, T. Díaz-Becerril, F. J. Flores Gracia, and A. Morales-Sánchez. "Si Nanocrystals Deposited by HFCVD." Solid State Phenomena 194 (November 2012): 204–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.194.204.

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The structural and optical properties of Si nanocrystal (Si-nc) embedded in a matrix of off-stoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapor deposition technique were studied. The films emit a wide photoluminescent spectra and the maximum peak emission shows a blue-shift as the substrate temperature (Ts) decreases. Also, a wavelength-shift of the absorption edge in transmittance spectra is observed, indicating an increase in the energy band gap. The Si-nc’s size decreased from 6.5 to 2.5 nm as Ts was reduced from 1150 to 900 °C, as measured through High Resolution Transmission Electron Microscopy analysis. A combination of mechanisms is proposed to explain the photoluminescence in the SiOx films, which involve SiOx defects and quantum confinement effects.

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Salata, O. V., P. J. Dobson, P. J. Hull, and J. L. Hutchison. "Uniform GaAs quantum dots in a polymer matrix." Applied Physics Letters 65, no. 2 (July 11, 1994): 189–91. http://dx.doi.org/10.1063/1.112667.

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Al-Nashy, B., and Amin H. Al-Khursan. "Completely inhomogeneous density-matrix theory for quantum-dots." Optical and Quantum Electronics 41, no. 14-15 (December 2009): 989–95. http://dx.doi.org/10.1007/s11082-010-9411-1.

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Ree, D. D., V. G. Mansurov, and K. S. Zhuravlev. "Photoluminescence of GaN quantum dots in AlN matrix." Microelectronic Engineering 81, no. 2-4 (August 2005): 251–54. http://dx.doi.org/10.1016/j.mee.2005.03.015.

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Jain, F., R. H. Gudlavalleti, R. Mays, B. Saman, J. Chandy, and E. Heller. "Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic." International Journal of High Speed Electronics and Systems 29, no. 01n04 (March 2020): 2040017. http://dx.doi.org/10.1142/s0129156420400170.

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Multi-state room temperature operation of SiOx-cladded Si quantum dots (QD) and GeOx-cladded Ge quantum dot channel (QDC) field-effect transistors (FETs) and spatial wavefunction switched (SWS)-FETs have been experimentally demonstrated. This paper presents simulation of cladded Si and Ge quantum dot channel (QDC) field-effect transistors at 4.2°K and milli-Kelvin temperatures. An array of thin oxide barrier/cladding (∼1nm) on quantum dots forms a quantum dot superlattice (QDSL). A gradual channel approximation model using potential and inversion layer charge density nQM, obtained by the self-consistent solution of the Schrodinger and Poisson’s equations, is shown to predict I-V characteristics up to milli-Kelvin temperatures. Physics-based equivalent circuit models do not work below 53°K. However, they may be improved by adapting parameters derived from quantum simulations. Low-temperature operation improves noise margins in QDC- and SWS-FET based multi-bit logic, which dissipates lower power and comprise of fewer device count. In addition, the role of self-assembled cladded QDs with transfer gate provides a novel pathway to implement qubit processing.

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VERMA, ABHISHEK, P. K. PANDEY, J. KUMAR, S. NAGPAL, P. K. BHATNAGAR, and P. C. MATHUR. "GROWTH DYNAMICS OF II–VI COMPOUND SEMICONDUCTOR QUANTUM DOTS EMBEDDED IN BOROSILICATE GLASS MATRIX." International Journal of Nanoscience 07, no. 02n03 (April 2008): 151–60. http://dx.doi.org/10.1142/s0219581x08005250.

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Wide bandgap II–VI semiconductor quantum dots embedded in glass matrix have shown great potential for opto-electronic device applications. The current problem is to achieve low size dispersion, high volume fraction, and better control over the size of the quantum dots in glass matrix. In this work, a modified growth method has been proposed to achieve a greater control over the size of quantum dots, to reduce their size dispersion and to increase their volume fraction. A theoretical model has been developed to quantitatively estimate the various parameters of the quantum dots. The effects of aging on various parameters of quantum dots in Semiconductor-Doped Glass (SDG) samples have also been discussed in the present work.

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Ma, Jun, Yujie Yuan, and Ping Sun. "Approaching 23% silicon heterojunction solar cells with dual-functional SiOx/MoS2 quantum dots interface layers." Solar Energy Materials and Solar Cells 227 (August 2021): 111110. http://dx.doi.org/10.1016/j.solmat.2021.111110.

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Dan’ko, V. A., S. O. Zlobin, I. Z. Indutnyi, I. P. Lisovskyy, V. G. Litovchenko, K. V. Michailovska, P. E. Shepeliavyi, and E. V. Begun. "PROPERTIES OF SI QUANTUM DOTS/SIOX POROUS FILM STRUC- TURES SYNTHESIZED USING THE HYDROFLUORIC TECHNOLOGY." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, no. 4 (March 16, 2015): 52. http://dx.doi.org/10.17073/1609-3577-2013-4-52-57.

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RUFO, SALVADOR, MITRA DUTTA, and MICHAEL A. STROSCIO. "THE INFLUENCE OF ENVIRONMENTAL EFFECTS ON THE ACOUSTIC PHONON SPECTRA IN QUANTUM-DOT HETEROSTRUCTURES." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 1147–58. http://dx.doi.org/10.1142/s0129156402001964.

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We present calculations of the acoustic phonon spectra for a variety of quantum dots and consider the cases where the quantum dots are both free-standing and embedded in a selection of different matrix materials — including semiconductors, plastic, and water. These results go beyond previous calculations for free-standing quantum dots and demonstrate that the matrix material can have a large effect on the acoustic phonon spectrum and consequently on a variety of phonon-assisted transitions in quantum-dot heterostructures.

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MASUMOTO, YASUAKI. "PERSISTENT SPECTRAL HOLE-BURNING IN SEMICONDUCTOR QUANTUM DOTS." Surface Review and Letters 03, no. 01 (February 1996): 143–50. http://dx.doi.org/10.1142/s0218625x96000292.

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The persistent spectral hole-burning (PSHB) phenomenon was observed in semiconductor quantum dots, CdSe , CuCl , and CuBr , embedded in glass and crystal. In inhomogeneously broadened exciton absorption spectra of these dots, the narrow bleaching hole and its associated structure are made by the narrowband laser excitation and are conserved for more than several hours at 2 K after the laser irradiation. The observation of the PSHB phenomenon in these four kinds of samples shows the generality of the phenomenon in semiconductor quantum dots and requires the existence of more than one ground-state configurations of the total system consisting of quantum dots and surrounding matrix. It means that not only the size distribution but also these ground-state configurations give inhomoge-neous broadening to semiconductor quantum dots. Thermally annealing and light-induced hole-filling phenomena were observed. Hole-burning and hole-filling mechanisms are discussed. Quantum dots consisting of 103–104 atoms behave like molecules or ions in matrix to give the PSHB phenomenon.

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Zhang, Jian, and Jia Wei Sheng. "Copper Quantum Dots Formation in a Borosilicate Glass." Journal of Nano Research 32 (May 2015): 66–70. http://dx.doi.org/10.4028/www.scientific.net/jnanor.32.66.

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This Borosilicate glass offers superior properties to the ordinary silicate glass. Metallic quantum dots embedded in glass are promising materials which can be used in modern optical devices. However, the introduction of metallic quantum dots into borosilicate glass has not been studied. We investigated the formation of copper quantum dots in Cu-doped borosilicate glass matrix using thermal annealing process. The reductant SnO included in borosilicate glass played an important role in the formation of the metallic quantum dots. Specifically, Cu quantum dots were formed only when SnO content reached at least 0.5 wt% after borosilicate glass was heated at 600 °C for 60min, which was evidenced by the detection of the characteristic absorption band at about 560nm originated from the surface plasmon resonance of Cu nanoparticles. The optimal concentration of SnO was found to be 1.5 wt% and the mean size for the heating-induced Cu quantum dots was calculated to be ~1.7 nm. Our data offer a simple approach to prepare the metallic quantum dots in borosilicate glass matrix and suggest a new type of metallic quantum dots for applications where superior durability, chemical and heat resistance are required.

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