Journal articles: 'Quantum devices'

1

Datta, S. "Quantum devices." Superlattices and Microstructures 6, no. 1 (January 1989): 83–93. http://dx.doi.org/10.1016/0749-6036(89)90100-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Kouwenhoven, L. "Quantum Devices." Science 279, no. 5357 (March 13, 1998): 1649–50. http://dx.doi.org/10.1126/science.279.5357.1649.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Kosina, Hans, and Siegfried Selberherr. "Device Simulation Demands of Upcoming Microelectronics Devices." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 115–36. http://dx.doi.org/10.1142/s0129156406003576.

Full text

Abstract:

An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer's perspective and an outlook on future research directions is given.

APA, Harvard, Vancouver, ISO, and other styles

4

MILLER, D. A. B. "QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES." International Journal of High Speed Electronics and Systems 01, no. 01 (March 1990): 19–46. http://dx.doi.org/10.1142/s0129156490000034.

Full text

Abstract:

Quantum well semiconductor structures allow small, fast, efficient optoelectronic devices such as optical modulators and switches. These are capable of logic themselves and have good potential for integration with electronic integrated circuits for parallel high speed interconnections. Devices can be made both in waveguides and two-dimensional parallel arrays. Working arrays of optical logic and memory devices have been demonstrated, to sizes as large as 2 048 elements, all externally accessible in parallel with free-space optics. This article gives an overview of the physics underlying the operation of such devices, and describes the principles of several of the device types, including self-electrooptic effect devices (SEEDs).

APA, Harvard, Vancouver, ISO, and other styles

5

Cahay, M., and S. Bandyopadhyay. "Semiconductor quantum devices." IEEE Potentials 12, no. 1 (February 1993): 18–23. http://dx.doi.org/10.1109/45.207169.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Sakaki, Hiroyuki. "Quantum microstructure devices." Solid State Communications 92, no. 1-2 (October 1994): 119–27. http://dx.doi.org/10.1016/0038-1098(94)90865-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Liu, H. C. "New quantum devices." Physica E: Low-dimensional Systems and Nanostructures 8, no. 2 (August 2000): 170–73. http://dx.doi.org/10.1016/s1386-9477(00)00135-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Luryi, Serge. "Quantum capacitance devices." Applied Physics Letters 52, no. 6 (February 8, 1988): 501–3. http://dx.doi.org/10.1063/1.99649.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Capasso, Federico, and Supriyo Datta. "Quantum Electron Devices." Physics Today 43, no. 2 (February 1990): 74–82. http://dx.doi.org/10.1063/1.881226.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Spagnolo, Michele, Joshua Morris, Simone Piacentini, Michael Antesberger, Francesco Massa, Andrea Crespi, Francesco Ceccarelli, Roberto Osellame, and Philip Walther. "Experimental photonic quantum memristor." Nature Photonics 16, no. 4 (March 24, 2022): 318–23. http://dx.doi.org/10.1038/s41566-022-00973-5.

Full text

Abstract:

AbstractMemristive devices are a class of physical systems with history-dependent dynamics characterized by signature hysteresis loops in their input–output relations. In the past few decades, memristive devices have attracted enormous interest in electronics. This is because memristive dynamics is very pervasive in nanoscale devices, and has potentially groundbreaking applications ranging from energy-efficient memories to physical neural networks and neuromorphic computing platforms. Recently, the concept of a quantum memristor was introduced by a few proposals, all of which face limited technological practicality. Here we propose and experimentally demonstrate a novel quantum-optical memristor (based on integrated photonics) that acts on single-photon states. We fully characterize the memristive dynamics of our device and tomographically reconstruct its quantum output state. Finally, we propose a possible application of our device in the framework of quantum machine learning through a scheme of quantum reservoir computing, which we apply to classical and quantum learning tasks. Our simulations show promising results, and may break new ground towards the use of quantum memristors in quantum neuromorphic architectures.

APA, Harvard, Vancouver, ISO, and other styles

11

Li Gu, Li Gu, Zhiyong Tan Zhiyong Tan, Qingzhao Wu Qingzhao Wu, Chang Wang Chang Wang, and Juncheng Cao Juncheng Cao. "20 Mbps wireless communication demonstration using terahertz quantum devices." Chinese Optics Letters 13, no. 8 (2015): 081402–81404. http://dx.doi.org/10.3788/col201513.081402.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Song, Chao, Jing Cui, H. Wang, J. Hao, H. Feng, and Ying Li. "Quantum computation with universal error mitigation on a superconducting quantum processor." Science Advances 5, no. 9 (September 2019): eaaw5686. http://dx.doi.org/10.1126/sciadv.aaw5686.

Full text

Abstract:

Medium-scale quantum devices that integrate about hundreds of physical qubits are likely to be developed in the near future. However, these devices will lack the resources for realizing quantum fault tolerance. Therefore, the main challenge of exploring the advantage of quantum computation is to minimize the impact of device and control imperfections without complete logical encoding. Quantum error mitigation is a solution satisfying the requirement. Here, we demonstrate an error mitigation protocol based on gate set tomography and quasi-probability decomposition. One- and two-qubit circuits are tested on a superconducting device, and computation errors are successfully suppressed. Because this protocol is universal for digital quantum computers and algorithms computing expected values, our results suggest that error mitigation can be an essential component of near-future quantum computation.

APA, Harvard, Vancouver, ISO, and other styles

13

Wallquist, M., K. Hammerer, P. Rabl, M. Lukin, and P. Zoller. "Hybrid quantum devices and quantum engineering." Physica Scripta T137 (December 2009): 014001. http://dx.doi.org/10.1088/0031-8949/2009/t137/014001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Lingalugari, Murali, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots." International Journal of High Speed Electronics and Systems 24, no. 03n04 (September 2015): 1550003. http://dx.doi.org/10.1142/s0129156415500032.

Full text

Abstract:

In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.

APA, Harvard, Vancouver, ISO, and other styles

15

Mohan, S., J. P. Sun, P. Mazumder, and G. I. Haddad. "Device and circuit simulation of quantum electronic devices." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 14, no. 6 (June 1995): 653–62. http://dx.doi.org/10.1109/43.387727.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Shi, Wenbo, and Robert Malaney. "Entanglement of Signal Paths via Noisy Superconducting Quantum Devices." Entropy 25, no. 1 (January 12, 2023): 153. http://dx.doi.org/10.3390/e25010153.

Full text

Abstract:

Quantum routers will provide for important functionality in emerging quantum networks, and the deployment of quantum routing in real networks will initially be realized on low-complexity (few-qubit) noisy quantum devices. A true working quantum router will represent a new application for quantum entanglement—the coherent superposition of multiple communication paths traversed by the same quantum signal. Most end-user benefits of this application are yet to be discovered, but a few important use-cases are now known. In this work, we investigate the deployment of quantum routing on low-complexity superconducting quantum devices. In such devices, we verify the quantum nature of the routing process as well as the preservation of the routed quantum signal. We also implement quantum random access memory, a key application of quantum routing, on these same devices. Our experiments then embed a five-qubit quantum error-correcting code within the router, outlining the pathway for error-corrected quantum routing. We detail the importance of the qubit-coupling map for a superconducting quantum device that hopes to act as a quantum router, and experimentally verify that optimizing the number of controlled-X gates decreases hardware errors that impact routing performance. Our results indicate that near-term realization of quantum routing using noisy superconducting quantum devices within real-world quantum networks is possible.

APA, Harvard, Vancouver, ISO, and other styles

17

WASHBURN, S. "SOME CONSEQUENCES OF CHAOS FOR QUANTUM DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 209–22. http://dx.doi.org/10.1142/s0129156498000105.

Full text

Abstract:

The consequences of quantum behavior of charge carriers in devices, while entertaining, is detrimental to the device performance. Chaos leads to unmanageable and unpredictable response in different devices to the same drive and bias inputs.

APA, Harvard, Vancouver, ISO, and other styles

18

VASILESKA, D., H. R. KHAN, S. S. AHMED, C. RINGHOFER, and C. HEITZINGER. "QUANTUM AND COULOMB EFFECTS IN NANODEVICES." International Journal of Nanoscience 04, no. 03 (June 2005): 305–61. http://dx.doi.org/10.1142/s0219581x05003164.

Full text

Abstract:

In state-of-the-art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this paper, we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantum-mechanical size quantization effects. We also demonstrate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the presence of unintentional dopant atoms at random locations within the channel.

APA, Harvard, Vancouver, ISO, and other styles

19

Hien, Dinh Sy. "Development of Quantum Simulator for Emerging Nanoelectronics Devices." ISRN Nanotechnology 2012 (August 28, 2012): 1–10. http://dx.doi.org/10.5402/2012/617214.

Full text

Abstract:

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.

APA, Harvard, Vancouver, ISO, and other styles

20

Tsuchiya, Hideaki, Brian Winstead, and Umberto Ravaioli. "Quantum Potential Approaches for Nano-scale Device Simulation." VLSI Design 13, no. 1-4 (January 1, 2001): 335–40. http://dx.doi.org/10.1155/2001/73145.

Full text

Abstract:

With the progress of integrated technology, the feature size of experimental electron devices have already been scaled down deeply into the sub–0.1 μm region. For such ultra-small devices, it is increasingly important to take quantum mechanical effects into account for device simulation. In this paper, we present a new approach for quantum modeling, applicable to multi-dimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum effects such as tunneling and quantum confinement effects can be incorporated in the standard Monte Carlo techniques.

APA, Harvard, Vancouver, ISO, and other styles

21

Beattie, Neil S., Guillaume Zoppi, Ian Farrer, Patrick See, Robert W. Miles, and David A. Ritchie. "Investigation of Quantum Dot Solar Cell Device Performance." MRS Proceedings 1551 (2013): 137–42. http://dx.doi.org/10.1557/opl.2013.959.

Full text

Abstract:

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.

APA, Harvard, Vancouver, ISO, and other styles

22

Li, Rui-Hao, Jun-Yang Liu, and Wen-Jing Hong. "Regulation strategies based on quantum interference in electrical transport of single-molecule devices." Acta Physica Sinica 71, no. 6 (2022): 067303. http://dx.doi.org/10.7498/aps.71.20211819.

Full text

Abstract:

The quantum interference effect in single-molecule devices is a phenomenon in which electrons are coherently transported through different frontier molecular orbitals with multiple energy levels, and the interference will occur between different energy levels. This phenomenon results in the increase or decrease of the probability of electron transmission in the electrical transport of the single-molecule device, and it is manifested in the experiment when the conductance value of the single-molecule device increases or decreases. In recent years, the use of quantum interference effects to control the electron transport in single-molecule device has proved to be an effective method, such as single-molecule switches, single-molecule thermoelectric devices, and single-molecule spintronic devices. In this work, we introduce the related theories of quantum interference effects, early experimental observations, and their regulatory role in single-molecule devices.

APA, Harvard, Vancouver, ISO, and other styles

23

Mannhart, Jochen. "Beyond Superconductivity." Journal of Superconductivity and Novel Magnetism 33, no. 1 (September 12, 2019): 249–51. http://dx.doi.org/10.1007/s10948-019-05286-3.

Full text

Abstract:

Abstract We present a novel device concept that utilizes the fascinating transition regime between quantum mechanics and classical physics. The devices operate by using a small number of individual quantum mechanical collapse events to interrupt the unitary evolution of quantum states represented by wave packets. Exceeding the constraints of the unitary evolution of quantum mechanics given by Schrödinger’s equation and of classical Hamiltonian physics, these devices display a surprising behavior.

APA, Harvard, Vancouver, ISO, and other styles

24

Roberts, J., I. E. Bagci, M. A. M. Zawawi, J. Sexton, N. Hulbert, Y. J. Noori, C. S. Woodhead, et al. "Atomic-scale Authentication with Resonant Tunneling Diodes." MRS Advances 1, no. 22 (2016): 1625–29. http://dx.doi.org/10.1557/adv.2016.156.

Full text

Abstract:

ABSTRACTThe room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

APA, Harvard, Vancouver, ISO, and other styles

25

ZHao, Hong-Quan, and Seiya Kasai. "WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure." Journal of Nanomaterials 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/726860.

Full text

Abstract:

One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG) were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG) regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD-) based arithmetic logic unit (ALU) is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabrication method as that of the quantum devices and basic circuits. This BDD-based ALU circuit worked correctly at room temperature. Since these quantum devices and circuits are basic units of the BDD ALU combinational circuit, the possibility of integrating these quantum devices and basic quantum circuits into the BDD-based quantum circuit with more complicated structures was discussed. We are prospecting the realization of quantum BDD combinational circuitries with very small of energy consumption and very high density of integration.

APA, Harvard, Vancouver, ISO, and other styles

26

Neidhard, H., and L. Wilhelm. "A New Model of Quantum Dot Light Emitting-Absorbing Devices." Zurnal matematiceskoj fiziki, analiza, geometrii 10, no. 3 (September 25, 2014): 350–85. http://dx.doi.org/10.15407/mag10.03.350.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Vetlugin, Anton N., Cesare Soci, and Nikolay I. Zheludev. "Modeling quantum light interference on a quantum computer." Applied Physics Letters 121, no. 10 (September 5, 2022): 104001. http://dx.doi.org/10.1063/5.0103361.

Full text

Abstract:

Modeling of photonic devices traditionally involves solving the equations of light–matter interaction and light propagation. Here, we demonstrate an alternative modeling methodology by reproducing the optical device functionality using a quantum computer. As an illustration, we simulate the quantum interference of light on a thin absorbing film. Such interference can lead to either perfect absorption or total transmission of light through the film, the phenomena attracting attention for data processing applications in classical and quantum information networks. We map the behavior of the photon in the interference experiment to the evolution of a quantum state of transmon, a superconducting charge qubit of the IBM quantum computer. Details of the real optical experiment are flawlessly reproduced on the quantum computer. We argue that the superiority of this methodology shall be apparent in modeling complex multi-photon optical phenomena and devices.

APA, Harvard, Vancouver, ISO, and other styles

28

Ferry, D. K., and J. R. Barker. "Open Problems in Quantum Simulation in Ultra-Submicron Devices." VLSI Design 8, no. 1-4 (January 1, 1998): 165–72. http://dx.doi.org/10.1155/1998/20250.

Full text

Abstract:

Quantum transport is becoming more significant as device size shrinks. For example, as device sizes are scaled below 0.1 μm, the number of impurities becomes quite small, so that they are no longer homogeneously distributed throughout the device volume and the carriers are localized into quantum boxes, in that self-energy corrections produced by locally high carrier densities will lead to quantum dot formation. This leads to the need to discuss transport through an array of such quantum structures. Here, we discuss several issues which must be considered in treating the transport through such devices.

APA, Harvard, Vancouver, ISO, and other styles

29

TSU, RAPHAEL. "ROOM TEMPERATURE SILICON QUANTUM DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 145–63. http://dx.doi.org/10.1142/s0129156498000087.

Full text

Abstract:

Quantum mechanical devices utilize the wave nature of electrons for their operations whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure. Some of the issues such as the tunneling time, the reduction of the dielectric constant and the drastic increase in the binding energy of dopants are discussed. Lacking an appropriate barrier for silicon, the majority of quantum devices are fabricated with compound semiconductors. In the past several years, certain schemes appeared, such as the resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix, and the superlattice barrier for silicon consisting of several periods of Si/O. There appears some doubt about the tunneling nature of the former, and the possiblity of dielectric breakdowns. This article aims to show that dielectric breakdowns can occur under fabrication conditions without using a controlled forming process. The latter results in epitaxially grown silicon beyond the superlattice barrier region, free of stacking fault defects, and thus is potentially important for silicon based quantum devices as well as serving as an SOI (silicon on insulator), without ion-implantation damage and oxygen inclusion. The replacement of SOI by the epitaxially grown Si/O superlattice barrier should promote the effort in high speed and low power MOSFET devices.

APA, Harvard, Vancouver, ISO, and other styles

30

CHIARELLO, F., M. G. CASTELLANO, R. LEONI, G. TORRIOLI, C. COSMELLI, and P. CARELLI. "JOSEPHSON DEVICES FOR QUANTUM COMPUTING." International Journal of Modern Physics B 17, no. 04n06 (March 10, 2003): 675–79. http://dx.doi.org/10.1142/s021797920301642x.

Full text

Abstract:

Computing tools, all based on classical logic at the moment, present intrinsic limitations that can be overcome by using quantum logic. In this direction, superconducting Josephson devices have been proved to be very suitable candidates for the realization of quantum computing tools. We present some basic elements of quantum computing, possible strategies for the implementation of quantum gates by using Josephson devices, and recent experimental results in this field.

APA, Harvard, Vancouver, ISO, and other styles

31

Li, Jin-Jin, and Ka-Di Zhu. "Quantum memory for light with a quantum dot system coupled to a nanomechanical resonator." Quantum Information and Computation 11, no. 5&6 (May 2011): 456–65. http://dx.doi.org/10.26421/qic11.5-6-7.

Full text

Abstract:

The specific features including high factor and long vibration lifetime of nanomechanical resonator (NR) in nano-optomechanical systems have stimulated research to realize some optical devices. In this work, we demonstrate theoretically that it is possible to achieve quantum memory for light on demand via a quantum dot system coupled to a nanomechanical resonator. This quantum memory for light is based on mechanically induced exciton polaritons, which makes the dark-state polariton reaccelerated and converted back into a photon pulse. Our presented device could open the door to all-optical routers for light memory devices and quantum information processing.

APA, Harvard, Vancouver, ISO, and other styles

32

Mendes, R. Vilela. "Modular quantum computing and quantum-like devices." International Journal of Quantum Information 19, no. 03 (April 2021): 2150020. http://dx.doi.org/10.1142/s0219749921500209.

Full text

Abstract:

The two essential ideas in this paper are, on the one hand, that a considerable amount of the power of quantum computation may be obtained by adding to a classical computer a few specialized quantum modules and on the other hand, that such modules may be constructed out of classical systems obeying quantum-like equations where a space coordinate is the evolution parameter (thus playing the role of time in the quantum algorithms).

APA, Harvard, Vancouver, ISO, and other styles

33

Haken. "Fluctuations in quantum devices." Condensed Matter Physics 7, no. 3 (2004): 527. http://dx.doi.org/10.5488/cmp.7.3.527.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Smith, C. G. "Low-dimensional quantum devices." Reports on Progress in Physics 59, no. 2 (February 1, 1996): 235–82. http://dx.doi.org/10.1088/0034-4885/59/2/003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Bhattacharya, Pallab, and Zetian Mi. "Quantum-Dot Optoelectronic Devices." Proceedings of the IEEE 95, no. 9 (September 2007): 1723–40. http://dx.doi.org/10.1109/jproc.2007.900897.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Gautier, J. "Beyond CMOS: quantum devices." Microelectronic Engineering 39, no. 1-4 (December 1997): 263–72. http://dx.doi.org/10.1016/s0167-9317(97)00181-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Stroscio, Michael A. "Quantum-based electronic devices." Superlattices and Microstructures 2, no. 1 (January 1986): 45–47. http://dx.doi.org/10.1016/0749-6036(86)90152-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Kern, D. P., K. Y. Lee, S. A. Rishton, and S. J. Wind. "Nanofabrication for Quantum Devices." Japanese Journal of Applied Physics 31, Part 1, No. 12B (December 30, 1992): 4496–500. http://dx.doi.org/10.1143/jjap.31.4496.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Heinosaari, Teiko, Takayuki Miyadera, and Daniel Reitzner. "Strongly Incompatible Quantum Devices." Foundations of Physics 44, no. 1 (November 5, 2013): 34–57. http://dx.doi.org/10.1007/s10701-013-9761-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Zwiller, Valéry, Thomas Aichele, and Oliver Benson. "Quantum optics with single quantum dot devices." New Journal of Physics 6 (July 30, 2004): 96. http://dx.doi.org/10.1088/1367-2630/6/1/096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Liu, Gang, Jingyuan Han, Yi Zhou, Tao Liu, and Jian Chen. "QSLT: A Quantum-Based Lightweight Transmission Mechanism against Eavesdropping for IoT Networks." Wireless Communications and Mobile Computing 2022 (September 27, 2022): 1–13. http://dx.doi.org/10.1155/2022/4809210.

Full text

Abstract:

Quantum Key Distribution (QKD) is a promising paradigm for Internet of Things (IoT) networks against eavesdropping attacks. However, classical quantum-based mechanisms are overweight and expensive for resource-constrained IoT devices. That is, the devices need to frequently exchange with the QKD controller via an out-band quantum channel. In this paper, we propose a novel Quantum-based Secure and Lightweight Transmission (QSLT) mechanism to ease the overweight pain for IoT devices against eavesdropping. Particularly, the mechanism predistributes quantum keys into IoT devices with SIM cards. Using one of the keys, QSLT encrypts or decrypts IoT sensitive data. It is noting that an in-band key-selection method is used to negotiate the session key between two different devices. For example, on one IoT device, the in-band method inserts a key-selection field at the end of the encrypted data to indicate the key’s sequence number. After another device receives the data, QSLT extracts the key-selection field and decrypts the data with the selected quantum key stored locally. We implement the proposed mechanism and evaluate its security and transmission performances. Experimental results show that QSLT can transmit IoT data with a lower delay while guaranteeing the security performance. Besides, QSLT also decreases power usage by approximately 58.77% compared with state of the art mechanisms.

APA, Harvard, Vancouver, ISO, and other styles

42

Klimeck, Gerhard, Roger K. Lake, R. Chris Bowen, Chenjing L. Fernando, and William R. Frensley. "Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO)." VLSI Design 6, no. 1-4 (January 1, 1998): 107–10. http://dx.doi.org/10.1155/1998/43043.

Full text

Abstract:

Electron transport in quantum devices is governed by discrete quantum states due to electron confinement. A crucial requirement for the modeling of quantum devices is the the numerical identification and resolution of these quantum states. We present an algorithm utilized in our general purpose quantum device simulator (NEMO), where we locate the resonances of the system first and then generate the optimized grid used to integrate over the resonances. We find this algorithm important in the modeling of coherent transport involving ultrafine resonances and crucial for the modeling of incoherent transport.

APA, Harvard, Vancouver, ISO, and other styles

43

Sustersic, N., S. Kim, P. C. Lv, M. Coppinger, T. Troeger, and James Kolodzey. "TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 115–20. http://dx.doi.org/10.1142/s0129156407004321.

Full text

Abstract:

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

APA, Harvard, Vancouver, ISO, and other styles

44

Abbattista, Cristoforo, Leonardo Amoruso, Samuel Burri, Edoardo Charbon, Francesco Di Lena, Augusto Garuccio, Davide Giannella, et al. "Towards Quantum 3D Imaging Devices." Applied Sciences 11, no. 14 (July 12, 2021): 6414. http://dx.doi.org/10.3390/app11146414.

Full text

Abstract:

We review the advancement of the research toward the design and implementation of quantum plenoptic cameras, radically novel 3D imaging devices that exploit both momentum–position entanglement and photon–number correlations to provide the typical refocusing and ultra-fast, scanning-free, 3D imaging capability of plenoptic devices, along with dramatically enhanced performances, unattainable in standard plenoptic cameras: diffraction-limited resolution, large depth of focus, and ultra-low noise. To further increase the volumetric resolution beyond the Rayleigh diffraction limit, and achieve the quantum limit, we are also developing dedicated protocols based on quantum Fisher information. However, for the quantum advantages of the proposed devices to be effective and appealing to end-users, two main challenges need to be tackled. First, due to the large number of frames required for correlation measurements to provide an acceptable signal-to-noise ratio, quantum plenoptic imaging (QPI) would require, if implemented with commercially available high-resolution cameras, acquisition times ranging from tens of seconds to a few minutes. Second, the elaboration of this large amount of data, in order to retrieve 3D images or refocusing 2D images, requires high-performance and time-consuming computation. To address these challenges, we are developing high-resolution single-photon avalanche photodiode (SPAD) arrays and high-performance low-level programming of ultra-fast electronics, combined with compressive sensing and quantum tomography algorithms, with the aim to reduce both the acquisition and the elaboration time by two orders of magnitude. Routes toward exploitation of the QPI devices will also be discussed.

APA, Harvard, Vancouver, ISO, and other styles

45

AMELINO-CAMELIA, GIOVANNI. "DIMENSIONFUL DEFORMATIONS OF POINCARÉ SYMMETRIES FOR A QUANTUM GRAVITY WITHOUT IDEAL OBSERVERS." Modern Physics Letters A 13, no. 16 (May 30, 1998): 1319–25. http://dx.doi.org/10.1142/s0217732398001376.

Full text

Abstract:

Quantum mechanics is revisited as the appropriate theoretical framework for the description of the outcome of experiments that rely on the use of classical devices. In particular, it is emphasized that the limitations on the measurability of (pairs of conjugate) observables encoded in the formalism of quantum mechanics reproduce faithfully the "classical-device limit" of the corresponding limitations encountered in (real or gedanken) experimental setups. It is then argued that devices cannot behave classically in quantum gravity, and that this might raise serious problems for the search of a class of experiments described by theories obtained by "applying quantum mechanics to gravity." It is also observed that using heuristic/intuitive arguments based on the absence of classical devices one is led to consider some candidate quantum gravity phenomena involving dimensionful deformations of the Poincaré symmetries.

APA, Harvard, Vancouver, ISO, and other styles

46

Baydin, Andrey, Fuyang Tay, Jichao Fan, Manukumara Manjappa, Weilu Gao, and Junichiro Kono. "Carbon Nanotube Devices for Quantum Technology." Materials 15, no. 4 (February 18, 2022): 1535. http://dx.doi.org/10.3390/ma15041535.

Full text

Abstract:

Carbon nanotubes, quintessentially one-dimensional quantum objects, possess a variety of electrical, optical, and mechanical properties that are suited for developing devices that operate on quantum mechanical principles. The states of one-dimensional electrons, excitons, and phonons in carbon nanotubes with exceptionally large quantization energies are promising for high-operating-temperature quantum devices. Here, we discuss recent progress in the development of carbon-nanotube-based devices for quantum technology, i.e., quantum mechanical strategies for revolutionizing computation, sensing, and communication. We cover fundamental properties of carbon nanotubes, their growth and purification methods, and methodologies for assembling them into architectures of ordered nanotubes that manifest macroscopic quantum properties. Most importantly, recent developments and proposals for quantum information processing devices based on individual and assembled nanotubes are reviewed.

APA, Harvard, Vancouver, ISO, and other styles

47

Scherübl, Zoltán, András Pályi, and Szabolcs Csonka. "Transport signatures of an Andreev molecule in a quantum dot–superconductor–quantum dot setup." Beilstein Journal of Nanotechnology 10 (February 6, 2019): 363–78. http://dx.doi.org/10.3762/bjnano.10.36.

Full text

Abstract:

Hybrid devices combining quantum dots with superconductors are important building blocks of conventional and topological quantum-information experiments. A requirement for the success of such experiments is to understand the various tunneling-induced non-local interaction mechanisms that are present in the devices, namely crossed Andreev reflection, elastic co-tunneling, and direct interdot tunneling. Here, we provide a theoretical study of a simple device that consists of two quantum dots and a superconductor tunnel-coupled to the dots, often called a Cooper-pair splitter. We study the three special cases where one of the three non-local mechanisms dominates, and calculate measurable ground-state properties, as well as the zero-bias and finite-bias differential conductance characterizing electron transport through this device. We describe how each non-local mechanism controls the measurable quantities, and thereby find experimental fingerprints that allow one to identify and quantify the dominant non-local mechanism using experimental data. Finally, we study the triplet blockade effect and the associated negative differential conductance in the Cooper-pair splitter, and show that they can arise regardless of the nature of the dominant non-local coupling mechanism. Our results should facilitate the characterization of hybrid devices, and their optimization for various quantum-information-related experiments and applications.

APA, Harvard, Vancouver, ISO, and other styles

48

Nation, Charlie, and Diego Porras. "Ergodicity probes: using time-fluctuations to measure the Hilbert space dimension." Quantum 3 (December 2, 2019): 207. http://dx.doi.org/10.22331/q-2019-12-02-207.

Full text

Abstract:

Quantum devices, such as quantum simulators, quantum annealers, and quantum computers, may be exploited to solve problems beyond what is tractable with classical computers. This may be achieved as the Hilbert space available to perform such `calculations' is far larger than that which may be classically simulated. In practice, however, quantum devices have imperfections, which may limit the accessibility to the whole Hilbert space. We thus determine that the dimension of the space of quantum states that are available to a quantum device is a meaningful measure of its functionality, though unfortunately this quantity cannot be directly experimentally determined. Here we outline an experimentally realisable approach to obtaining the required Hilbert space dimension of such a device to compute its time evolution, by exploiting the thermalization dynamics of a probe qubit. This is achieved by obtaining a fluctuation-dissipation theorem for high-temperature chaotic quantum systems, which facilitates the extraction of information on the Hilbert space dimension via measurements of the decay rate, and time-fluctuations.

APA, Harvard, Vancouver, ISO, and other styles

49

OSSIG, GERALD, and FERDINAND SCHÜRRER. "ELECTRON TRANSPORT IN SILICON QUANTUM WIRE DEVICES." International Journal of Nanoscience 08, no. 06 (December 2009): 515–21. http://dx.doi.org/10.1142/s0219581x09006420.

Full text

Abstract:

The simulation of the electron transport in silicon devices is usually based on a coupling of the semiclassical Boltzmann transport equation with the Poisson equation. We follow this successful approach and extend it with the effective mass Schrödinger equation leading to a Schrödinger–Poisson–Boltzmann system for the description of the electron transport in silicon quantum wire devices. Phonon-scattering is taken into account by phonon distributions in thermal equilibrium. In addition, we study the nonsteady state behavior of the electron transport in the considered device.

APA, Harvard, Vancouver, ISO, and other styles

50

DUTTA, M., M. A. STROSCIO, and K. W. KIM. "RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 281–312. http://dx.doi.org/10.1142/s0129156498000130.

Full text

Abstract:

As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'Quantum devices'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles