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Published: 4 June 2021
Last updated: 1 February 2022

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1

Kimmerle, Achim, Philip Rothhardt, Andreas Wolf, and Ronald A. Sinton. "Increased Reliability for J0-analysis by QSSPC." Energy Procedia 55 (2014): 101–6. http://dx.doi.org/10.1016/j.egypro.2014.08.087.

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2

Jung, Yujin, Kwan Hong Min, Soohyun Bae, Yoonmook Kang, Donghwan Kim, and Hae-Seok Lee. "Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer." Energies 13, no. 21 (November 5, 2020): 5783. http://dx.doi.org/10.3390/en13215783.

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In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the Pmax point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.
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3

Robertson, J. G., P. A. Shaver, J. Surdej, and J. P. Swings. "Spectroscopy of the QSSOs Q0118–031 A, B, C⋆." Monthly Notices of the Royal Astronomical Society 219, no. 2 (March 1986): 403–16. http://dx.doi.org/10.1093/mnras/219.2.403.

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4

Narlikar, Jayant V. "An Alternative Cosmology: The QSSC." Symposium - International Astronomical Union 183 (1999): 277–85. http://dx.doi.org/10.1017/s0074180900132942.

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This review begins with a brief survey of the observational constraints on the standard big bang cosmology, pointing out that the various limits leave a very narrow window in the parameter space of plausible models. There is thus a strong case for alternative cosmologies. The rest of the review concentrates on one alternative, the quasi steady state cosmology (QSSC) and summarises the recent work on this model. This includes, the theoretical formulation and simple exact solutions of the basic equations, their relationship to observations, the stability of solutions and the toy model for understanding the growth of structures in the universe.
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5

Bali, Raj. "The quasi-steady-state cosmology in a radiation-dominated phase." Modern Physics Letters A 34, no. 32 (October 10, 2019): 1950262. http://dx.doi.org/10.1142/s0217732319502626.

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Analytical solutions for radiation-dominated phase of Quasi-Steady-State Cosmology (QSSC) in Friedmann–Robertson–Walker models are obtained. We find that matter density is positive in all the cases [Formula: see text]. The nature of Hubble parameter (H) in [Formula: see text] is discussed. The deceleration parameter [Formula: see text] is marginally less than zero indicating accelerating universe. The scale factor [Formula: see text] is graphically shown with time. The model represents oscillating universe between the above-mentioned limits. Because of the bounce in QSSC, the maximum density phase is still matter-dominated. The models represent singularity-free model. We also find that the models have event horizon i.e. no observer beyond the proper distance [Formula: see text] can communicate each other in FRW models for radiation-dominated phase in the frame work of QSSC. The FRW models are special classes of Bianchi type I, V, IX spacetimes with zero, negative and positive curvatures, respectively. Initially i.e. at [Formula: see text], the models represent steady model. We have tried to show how a good fit can be obtained to the observations in the framework of QSSC during radiation-dominated phase. The present model is free from singularity, particle horizon and provides a natural explanation for the flatness problem. Therefore, our model is superior to other models.
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6

Sunarto, Andang, Jumat Sulaiman, and Azali Saudi. "Caputo’s Implicit Solution of Space-Fractional Diffusion Equations by QSSOR Iteration." Advanced Science Letters 24, no. 3 (March 1, 2018): 1927–31. http://dx.doi.org/10.1166/asl.2018.11190.

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7

VISHWAKARMA, R. G., and J. V. NARLIKAR. "QSSC RE-EXAMINED FOR THE NEWLY DISCOVERED SNeIa." International Journal of Modern Physics D 14, no. 02 (February 2005): 345–54. http://dx.doi.org/10.1142/s0218271805006547.

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We examine the possible consistency of the quasi-steady state model with the newly discovered SNe Ia . The model assumes the existence of metallic dust ejected from the SNe explosions, which extinguishes light travelling over long distances. We find that the model shows a reasonable fit to the data, which improves if one take account of the weak gravitational lensing effect of the SNe which have been observed on the brighter side.
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8

Alibubin, M. U., A. Sunarto, and J. Sulaiman. "Quarter-sweep Nonlocal Discretization Scheme with QSSOR Iteration for Nonlinear Two-point Boundary Value Problems." Journal of Physics: Conference Series 710 (April 2016): 012023. http://dx.doi.org/10.1088/1742-6596/710/1/012023.

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9

Wang, Xi, Mattias Juhl, Malcolm Abbott, Ziv Hameiri, Yu Yao, and Alison Lennon. "Use of QSSPC and QSSPL to Monitor Recombination Processes in P-type Silicon Solar Cells." Energy Procedia 55 (2014): 169–78. http://dx.doi.org/10.1016/j.egypro.2014.08.110.

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10

BOUZNIF, ZOUHIER, AHMED ZARROUG, ZIED BEN HAMED, LOTFI DERBALI, and HATEM EZZAOUIA. "PASSIVATION OF CRYSTALLINE SILICON ON POROUS SILICON SURFACE TREATED BY ERBIUM OXIDES (Er2O3) FOR ENHANCEMENT THE PHOTOVOLTAIC PROPERTIES." Surface Review and Letters 25, no. 05 (July 2018): 1850099. http://dx.doi.org/10.1142/s0218625x18500993.

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The aim of this paper is to study the effect of erbium oxide (Er2O3) on porous silicon (PS) wafers used for photovoltaic application. An immersion of PS wafers in Er2O3 solution can be used to enhance light trapping and form an efficient surface by passivation process. PS was prepared by the stain-etching method and doped by Er species. In fact, the topography was investigated by the scanning electron microscope (SEM). In addition, the spectral behaviors of the reflectivity and the photoluminescence were discussed. The dependence of minority carrier lifetime was evaluated by means of the Quasi-Steady-State Photoconductance technique (QSSPC). Besides, an enhancement in lifetime was observed. A framework is provided for estimating an efficiency improvement in studied films which will help to guide the development of improved energy-efficient.
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11

Deckers, Jan, Maarten Debucquoy, Ivan Gordon, Robert Mertens, and Jef Poortmans. "Avoiding Parasitic Current Flow Through Point Contacts in Test Structures for QSSPC Contact Recombination Current Measurements." IEEE Journal of Photovoltaics 5, no. 1 (January 2015): 276–81. http://dx.doi.org/10.1109/jphotov.2014.2359731.

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12

Sunarto, A., P. Agarwal, J. V. L. Chew, H. Justine, and J. Sulaiman. "QSSOR and cubic non-polynomial spline method for the solution of two-point boundary value problems." Journal of Physics: Conference Series 2000, no. 1 (August 1, 2021): 012007. http://dx.doi.org/10.1088/1742-6596/2000/1/012007.

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13

Vermang, Bart, Aude Rothschild, Karine Kenis, Kurt Wostyn, Twan Bearda, A. Racz, X. Loozen, et al. "Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3." Solid State Phenomena 187 (April 2012): 357–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.357.

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Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.
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14

Park, HyunJung, Soo Min Kim, Sujeong Jeong, Seung Hyun Shin, Hyomin Park, Yoonmook Kang, Hae-Seok Lee, and Donghwan Kim. "Lifetime Analysis for Comparing POCl3 Diffused Emitter Doping Characteristics in p-Type Silicon Solar Cells Using QSSPC." Journal of Nanoscience and Nanotechnology 17, no. 7 (July 1, 2017): 4914–19. http://dx.doi.org/10.1166/jnn.2017.14276.

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15

El Amrani, A., R. Si-Kaddour, M. Maoudj, and C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface." Materials Science-Poland 37, no. 3 (September 1, 2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.

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AbstractThe SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.
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16

Boo, Hyunpil, Jong-Han Lee, Min Gu Kang, KyungDong Lee, Seongtak Kim, Hae Chul Hwang, Wook Jung Hwang, et al. "Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/921908.

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P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘Cfor 30∼90 min for activation. Boron emitters were activated at1000∘Cor higher, while phosphorus emitters were activated at950∘C. QSSPC measurements show that the impliedVocof boron emitters increases about 15 mV and theJ01decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the impliedVocdecreases from 622 mV to 560 mV and theJ01increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency andVoc, especially (Δηabs=+0.4%) for backside emitter solar cells.
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17

Boucheham, Abdelghani, Djoudi Bouhafs, Nabil Khelifati, and Baya Palahouane. "Low Temperature Annealing Effect on Electrical Properties of Multicrystalline Silicon Wafers for Photovoltaic Application." Applied Mechanics and Materials 548-549 (April 2014): 349–53. http://dx.doi.org/10.4028/www.scientific.net/amm.548-549.349.

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The aim of this work is to study the low temperature annealing effect on the electrical properties of p-type multicrystalline silicon grown by Heat Exchanger Method (HEM).The minority carrier lifetime variation, the transition metal elements behavior, the sheet resistivity and the interstitial oxygen concentration after different temperatures annealing under N2ambient were investigated using quasi-steady state photoconductance technique (QSSPC), secondary ion mass spectroscopy (SIMS), four-probe measurement and Fourier transform infrared spectrometer (FTIR), respectively. The obtained results indicate in the temperature range of 300°C to 700°C that the effective lifetime increases and reaches its maximum values of 28 μs at 500 °C and decreasing to 6 μs at 700 °C. This amelioration is due probably to metallic impurities internal gettering in the extended defects and in the oxygen precipitates as observed on SIMS profiles and the FTIR spectra. From 300 °C to 500 °C the sheet resistivity values rest unchanged at 30 Ω.cm-2and rises significantly to reach 45 Ω.cm-2for T> 500 °C.
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18

Hofmann, M., S. Kambor, C. Schmidt, D. Grambole, J. Rentsch, S. W. Glunz, and R. Preu. "PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells." Advances in OptoElectronics 2008 (June 4, 2008): 1–10. http://dx.doi.org/10.1155/2008/485467.

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A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) and below 30 cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.
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19

Goverde, H., B. Vermang, A. Morato, J. John, J. Horzel, G. Meneghesso, and J. Poortmans. "Al2O3 Surface Passivation Characterized on Hydrophobic and Hydrophilic c-Si by a Combination of QSSPC, CV, XPS and FTIR." Energy Procedia 27 (2012): 355–60. http://dx.doi.org/10.1016/j.egypro.2012.07.076.

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20

Deckers, Jan, Maarten Debucquoy, Robert Mertens, and Jef Poortmans. "Out-of-plane Excess Carrier Density Variations in Point Contact Lattice-based test Structures for QSSPC Contact Recombination Current Measurements." Energy Procedia 77 (August 2015): 36–42. http://dx.doi.org/10.1016/j.egypro.2015.07.007.

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21

Angermann, Heike, Klaus Wolke, Christiane Gottschalk, Anamaria Moldovan, Maurizio Roczen, Jens Fittkau, Martin Zimmer, and Jochen Rentsch. "Surface Charge and Interface State Density on Silicon Substrates after Ozone Based Wet-Chemical Oxidation and Hydrogen-Termination." Solid State Phenomena 195 (December 2012): 314–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.314.

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For more than 20 years, the application of ozone dissolved in pure deionised water (DIW-O3) has been investigated for wafer-cleaning and resist stripping applications in the semiconductor industry [, , ]. To reduce chemical consumption and disposal costs as well as to improve cleaning efficiency, DIW-O3 is used in semiconductor wet cleaning processes as an alternative to traditional sulphuric acid peroxide (H2SO4/H2O2) [] and RCA [] cleans. Silicon solar cell fabrication includes multiple wet cleaning steps involving large amounts of chemicals. In Si substrate manufacturing the wet-chemical oxidation of substrate surface is used mainly for three purposes: (i) the removal of surface contamination and surface micro-roughness by different cleaning and smoothing procedures in H2O2 containing solutions (RCA I and RCA II) [5], in H2SO4/H2O2 [4], (ii) the preparation of hydrophilic surfaces for subsequent layer deposition [,] and (iii) the fabrication of thin oxide layers []. Chemical consumption could be reduced by replacing some of these chemicals with a mixture of pure deionised water with dissolved ozone for cleaning and surface conditioning. The kinetics of wet-chemical oxidation in DIW-O3 were recently investigated by ellipsometrical measurements of oxide thicknesses (ox>) [3,6,7], by SPV-measurements [7,], by contact angle measurements as well as by quasi-steady-state photo conductance (QSSPC) measurements [7].
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22

Wang, Yulan, Zhixia Yang, and Xiaomei Yang. "Kernel-Free Quadratic Surface Minimax Probability Machine for a Binary Classification Problem." Symmetry 13, no. 8 (July 28, 2021): 1378. http://dx.doi.org/10.3390/sym13081378.

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In this paper, we propose a novel binary classification method called the kernel-free quadratic surface minimax probability machine (QSMPM), that makes use of the kernel-free techniques of the quadratic surface support vector machine (QSSVM) and inherits the advantage of the minimax probability machine (MPM) without any parameters. Specifically, it attempts to find a quadratic hypersurface that separates two classes of samples with maximum probability. However, the optimization problem derived directly was too difficult to solve. Therefore, a nonlinear transformation was introduced to change the quadratic function involved into a linear function. Through such processing, our optimization problem finally became a second-order cone programming problem, which was solved efficiently by an alternate iteration method. It should be pointed out that our method is both kernel-free and parameter-free, making it easy to use. In addition, the quadratic hypersurface obtained by our method was allowed to be any general form of quadratic hypersurface. It has better interpretability than the methods with the kernel function. Finally, in order to demonstrate the geometric interpretation of our QSMPM, five artificial datasets were implemented, including showing the ability to obtain a linear separating hyperplane. Furthermore, numerical experiments on benchmark datasets confirmed that the proposed method had better accuracy and less CPU time than corresponding methods.
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23

Wang, Xi, Mattias Juhl, and Alison Lennon. "Injection-dependent Carrier Lifetime Analysis of Recombination Due to Boron-Oxygen Complexes in Wafers Passivated with Different Dielectrics by QSSPL and QSSPC." Energy Procedia 92 (August 2016): 265–73. http://dx.doi.org/10.1016/j.egypro.2016.07.074.

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24

MAOUDJ, M., D. BOUHAFS, N. BOUROUBA, A. EL AMRANI, R. BOUFNIK, M. BEROUAKEN, and A. HAMIDA-FERHAT. "INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz–SILICON WAFER." Surface Review and Letters 25, no. 07 (October 2018): 1950007. http://dx.doi.org/10.1142/s0218625x19500070.

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The chemical etching of the surface of silicon wafers is a critical step in the manufacturing process of all semiconductor devices. In this contribution, we investigate the effect of alkaline etching on minority carrier lifetime and interface-states density ([Formula: see text] of silicon wafers intended to be used as solar cell substrates. After alkali treatment, the surface morphology was analyzed using scanning electron microscopy (SEM) and UV-visible-NIR optical spectroscopy. Besides and as electrical characterizations, the minority charge carrier lifetime ([Formula: see text] was measured by the Quasi-Steady State Photoconductance technique (QSSPC), and the Electrochemical Impedance Spectroscopy was used to evaluate [Formula: see text]. These results were correlated with the surface recombination velocity (SRV) calculated by fitting the experimental data to the theory. The results of characterization showed a lower SRV and a higher apparent lifetime ([Formula: see text] obtained with 23[Formula: see text]wt.% KOH etching as compared to those obtained with 30[Formula: see text]wt.% NaOH; viz. 825[Formula: see text]cm[Formula: see text] against 1500[Formula: see text]cm.s[Formula: see text] and 32[Formula: see text][Formula: see text]s against 23[Formula: see text][Formula: see text]s, respectively. These findings were corroborated by [Formula: see text] measurements which gave [Formula: see text][Formula: see text]ev[Formula: see text]cm[Formula: see text] for KOH treatment and [Formula: see text][Formula: see text]ev[Formula: see text]cm[Formula: see text] for NaOH treatment.
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Almeida, Anna Alice Figueirêdo de, Mara Behlau, and José Roberto Leite. "Correlação entre ansiedade e performance comunicativa." Revista da Sociedade Brasileira de Fonoaudiologia 16, no. 4 (December 2011): 384–89. http://dx.doi.org/10.1590/s1516-80342011000400004.

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OBJETIVO: Investigar a correlação entre ansiedade-traço, ansiedade-estado e parâmetros vocais. MÉTODOS: Participaram 24 adultos, 12 homens e 12 mulheres, com idades entre 19 e 42 anos e sem antecedentes psiquiátricos. O escore do Inventário de Ansiedade Traço-Estado (IDATE), principalmente o Ansiedade-Traço, possibilitou a divisão dos participantes em dois grupos: baixa ansiedade (BA) e alta ansiedade (AA). Foram avaliados parâmetros psicológicos (IDATE) e vocais (auto-avaliação por questionário de sinais e sintomas vocais, QSSV; protocolo de Qualidade de Vida em Voz - QVV; avaliação perceptivo-auditiva-visual do comportamento vocal com a descrição de parâmetros de voz, fala e corpo; e análise acústica). O material de fala analisado foi a emissão sustentada da vogal /a/, contagem de números e um discurso sobre momentos de maior ansiedade ao longo da vida. RESULTADOS: Quanto maior o traço de ansiedade indicado pelo IDATE, maior a evidência de ansiedade na fala encadeada e no discurso; quanto mais agudo o pitch da voz, maior o comprometimento da articulação da fala, da coordenação pneumofono-articulatória, da movimentação corporal e da expressão facial. Quanto maior o estado de ansiedade, maior a evidência de ansiedade em diversos parâmetros do discurso, com desequilíbrio na ressonância vocal, comprometimento na modulação, na articulação da fala e na expressão facial. CONCLUSÃO: O traço e o estado de ansiedade diferenciaram o comportamento comunicativo dos indivíduos, envolvendo modificações no corpo, na fala e na voz.
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Almeida, Larissa Nadjara Alves, Leonardo Wanderley Lopes, Denise Batista da Costa, Eveline Gonçalves Silva, Germana Maria Soares da Cunha, and Anna Alice Figueirêdo de Almeida. "Características vocais e emocionais de professores e não professores com baixa e alta ansiedade." Audiology - Communication Research 19, no. 2 (April 2014): 179–85. http://dx.doi.org/10.1590/s2317-64312014000200013.

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Objetivo Comparar características vocais e emocionais em grupos de professores e não professores com baixa e alta ansiedade. Métodos Participaram do estudo 93 sujeitos, de ambos os gêneros, com idades entre 18 e 59 anos, divididos em quatro grupos: professores com baixa ansiedade (PBA), professores com alta ansiedade (PAA), não professores com baixa ansiedade (NPBA) e não professores com alta ansiedade (NPAA). Os parâmetros vocais foram mensurados por meio dos instrumentos Questionário de Sinais e Sintomas Vocais (QSSV), Protocolo de Qualidade de Vida em Voz (QVV), Índice de Desvantagem Vocal (IDV), além da gravação de fala e vogal sustentada, avaliada por três fonoaudiólogos, a partir da Escala Analógico-Visual (EAV). Para avaliação dos parâmetros emocionais, utilizou-se o Self-Report Questionnaire (SRQ) e o Inventário de Ansiedade Traço-Estado (IDATE). Resultados Constatou-se que os grupos com alta ansiedade relataram sintomas indicativos de alto nível de estresse e depressão, sendo que o grupo de professores apresentou maior número de sintomas emocionais. Quanto aos parâmetros vocais, observou-se que os professores com alta ansiedade expressaram maior número de sintomas vocais, maior comprometimento da qualidade de vida em voz, maior desvio global da qualidade vocal e alto índice de desvantagem vocal, quando comparados com os demais grupos. Conclusão Os indivíduos com alta ansiedade tiveram maior comprometimento emocional, vocal e na qualidade de vida, sobretudo aqueles que têm a voz como instrumento de trabalho, os professores.
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Costa, Denise Batista da, Leonardo Wanderley Lopes, Eveline Gonçalves Silva, Germana Maria Soares da Cunha, Larissa Nadjara Alves Almeida, and Anna Alice Figueirêdo de Almeida. "Fatores de risco e emocionais na voz de professores com e sem queixas vocais." Revista CEFAC 15, no. 4 (August 2013): 1001–10. http://dx.doi.org/10.1590/s1516-18462013000400030.

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OBJETIVO: analisar a interferência dos fatores de riscos e emocionais na voz de professores com e sem queixa. MÉTODO: a amostra foi composta de 44 professores. Utilizou-se uma ficha com dados pessoais e profissionais, três questionários referentes aos aspectos vocais e dois questionários para dados relacionados à emoção, sobretudo ansiedade, além da coleta de voz para análise perceptivo-auditiva. Os grupos foram divididos a partir do número de sintomas relatados, estabelecendo um número de 22 voluntários no grupo de Professores Sem Queixa (PSQ) e 22 no grupo Professores Com Queixas (PCQ), sendo deste grupo, os indivíduos que relataram mais de três sintomas vocais. Os dados foram analisados estatisticamente. RESULTADOS: a média do número de sintomas descritos no QSSV foi de 5,7 (±2,8) para os PCQ e de 0,8 (±0,9) para os PSQ. Os PSQ referiram uma melhor autoavaliação vocal (p= 0,01) e os PCQ afirmaram possuir um maior comprometimento em sua voz (p= 0,001). O grupo PSQ obteve os maiores valores nos escores do QVV-Físico (p=0,0007) e QVV-Total (p= 0,0006). Os PCQ obtiveram maiores valores no IDV-Total (p=0,0003) e IDV-Orgânico (p=0,0006), e um maior comprometimento emocional, com SRQ de 5,7 (±3,9) e IDATE 42,5 (±12,7). A partir da avaliação perceptivo-auditiva, os PCQ apresentaram um desvio vocal moderado com presença de rugosidade, soprosidade e tensão na voz, enquanto os PSQ evidenciam um desvio leve em todos os parâmetros. CONCLUSÃO: os professores com queixas vocais estão expostos a mais fatores de riscos, além de relatarem mais sintomas e comprometimento vocais, bem como emocionais.
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28

Zurn, Jason D., Mandie Driskill, Sook Jung, Dorrie Main, Melinda H. Yin, Melissa C. Clark, Lailiang Cheng, et al. "A Rosaceae Family-Level Approach To Identify Loci Influencing Soluble Solids Content in Blackberry for DNA-Informed Breeding." G3: Genes|Genomes|Genetics 10, no. 10 (August 7, 2020): 3729–40. http://dx.doi.org/10.1534/g3.120.401449.

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A Rosaceae family-level candidate gene approach was used to identify genes associated with sugar content in blackberry (Rubus subgenus Rubus). Three regions conserved among apple (Malus × domestica), peach (Prunus persica), and alpine strawberry (Fragaria vesca) were identified that contained previously detected sweetness-related quantitative trait loci (QTL) in at least two of the crops. Sugar related genes from these conserved regions and 789 sugar-associated apple genes were used to identify 279 Rubus candidate transcripts. A Hyb-Seq approach was used in conjunction with PacBio sequencing to generate haplotype level sequence information of sugar-related genes for 40 cultivars with high and low soluble solids content from the University of Arkansas and USDA blackberry breeding programs. Polymorphisms were identified relative to the ‘Hillquist’ blackberry (R. argutus) and ORUS 4115-3 black raspberry (R. occidentalis) genomes and tested for their association with soluble solids content (SSC). A total of 173 alleles were identified that were significantly (α = 0.05) associated with SSC. KASP genotyping was conducted for 92 of these alleles on a validation set of blackberries from each breeding program and 48 markers were identified that were significantly associated with SSC. One QTL, qSSC-Ruh-ch1.1, identified in both breeding programs accounted for an increase of 1.5 °Brix and the polymorphisms were detected in the intron space of a sucrose synthase gene. This discovery represents the first environmentally stable sweetness QTL identified in blackberry. The approach demonstrated in this study can be used to develop breeding tools for other crops that have not yet benefited directly from the genomics revolution.
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29

Muthuvalu, Mohana Sundaram, and Jumat Sulaiman. "Solving second kind linear Fredholm integral equations via Quarter-Sweep SOR iterative method." Malaysian Journal of Fundamental and Applied Sciences 6, no. 2 (July 22, 2014). http://dx.doi.org/10.11113/mjfas.v6n2.191.

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In this paper, we consider the numerical solutions of linear Fredholm integral equations of the second kind. The Quarter-Sweep Successive Over-Relaxation (QSSOR) iterative method is applied to solve linear systems generated from discretization of the second kind linear Fredholm integral equations using quadrature method. In addition, the formulation and implementation of the proposed method to solve the problem are also presented. Numerical tests and comparisons with other existing methods are given to illustrate the effectiveness of the proposed method.
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30

Hodge, John. "QSSC model’s next step is the STOE." Intellectual Archive 8, no. 1 (March 22, 2019). http://dx.doi.org/10.32370/ia_2019_01_2.

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