Relevant bibliographies by topics / Q-MMIC

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  1. Journal articles

Academic literature on the topic 'Q-MMIC'

Author: Grafiati
Published: 8 September 2023

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Journal articles on the topic "Q-MMIC"

1

Chi, J. C. L., J. A. Lester, Y. Hwang, P. D. Chow, and M. Y. Huang. "A 1-W high-efficiency Q-band MMIC power amplifier." IEEE Microwave and Guided Wave Letters 5, no. 1 (1995): 21–23. http://dx.doi.org/10.1109/75.382372.

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2

Kim, Mun-Ho, Jung-Gil Yang, and Kyoung-Hoon Yang. "High-Performance Q-Band MMIC Phase Shifters Using InGaAs PIN Diodes." Journal of electromagnetic engineering and science 9, no. 3 (2009): 159–63. http://dx.doi.org/10.5515/jkiees.2009.9.3.159.

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3

Yu, M., R. H. Walden, A. E. Schmitz, and M. Lui. "Ka/Q-band doubly balanced MMIC mixers with low LO power." IEEE Microwave and Guided Wave Letters 10, no. 10 (2000): 424–26. http://dx.doi.org/10.1109/75.877233.

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4

Ryu, Keun-Kwan, and Sung-Chan Kim. "A Design of MMIC Mixer for I/Q Demodulator of Non-contact Near Field Microwave Probing System." Journal of the Korean Institute of Information and Communication Engineering 16, no. 5 (2012): 1023–28. http://dx.doi.org/10.6109/jkiice.2012.16.5.1023.

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5

Resca, Davide, Rafael Cignani, Corrado Florian, Andrea Biondi, and Francesco Scappaviva. "A Q/Ku-K band MMIC double-balanced subharmonic diode ring mixer for satellite communications in GaAs pHEMT technology." International Journal of Microwave and Wireless Technologies 7, no. 2 (2014): 107–13. http://dx.doi.org/10.1017/s1759078714000695.

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Abstract:
A MMIC double-balanced subharmonic diode ring mixer was designed for broadband satellite communications exploiting a GaAs pHEMT process. The circuit implements the frequency conversion from Q (43.5–50 GHz) to Ku-K band (17–21.5 GHz). Besides the RF, LO, and IF baluns, the MMIC integrates a buffer amplifier for the local oscillator signal, which is designed between X and Ku bands (11–16.5 GHz), due to the subharmonic operation. The mixer measured conversion loss is between 8 and 12 dB along the bandwidth, with an LO power of 9 dBm. The input p1 dB and IP3 are 2 and 15 dBm, respectively. The balanced structure ensures an LO and 2 × LO leakages at the IF port lower than −25 and −35 dBm, respectively. Other spurious remain below −67 dBc. The chip dimensions are 2.4 × 2.4 mm2.
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6

Lam, W., M. Matloubian, A. Kurdoghlian, et al. "High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications." IEEE Microwave and Guided Wave Letters 3, no. 11 (1993): 420–22. http://dx.doi.org/10.1109/75.248519.

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7

Dan, An, Rhee Eung-Ho, Rhee Jin-Koo, and Kim Sam-Dong. "Design and fabrication of a wideband MMIC Low-Noise Amplifier using Q-matching." Journal of the Korean Physical Society 37, no. 6 (2000): 837. http://dx.doi.org/10.3938/jkps.37.837.

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8

Youngwoo Kwon, Kyungjin Kim, E. A. Sovero, and D. S. Deakin. "Watt-level Ka- and Q-band MMIC power amplifiers operating at low voltages." IEEE Transactions on Microwave Theory and Techniques 48, no. 6 (2000): 891–97. http://dx.doi.org/10.1109/22.846714.

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9

Xu, Zhengbin, Jie Xu, Yinjie Cui, Jian Guo, and Cheng Qian. "A low-cost W-band SPDT switch with Q-MMIC concept using quartz substrate." Journal of Electromagnetic Waves and Applications 32, no. 4 (2017): 428–38. http://dx.doi.org/10.1080/09205071.2017.1394915.

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10

Kim, M., J. G. Yang, and K. Yang. "Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes." Electronics Letters 46, no. 3 (2010): 219. http://dx.doi.org/10.1049/el.2010.2007.

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