Journal articles on the topic 'Power semiconductor diodes'
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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
Full textBumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.
Full textLiu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.
Full textLi, Zai Jin, Yi Qu, Te Li, Peng Lu, Bao Xue Bo, Guo Jun Liu, and Xiao Hui Ma. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.
Full textAl-Rawashdeh, Ayman Yasseen, Mikhail Pavlovich Dunayev, Khalaf Y. Alzyoud, and Sarfaroz U. Dovudov. "Calculation of power losses in a frequency inverter." International Journal of Power Electronics and Drive Systems (IJPEDS) 15, no. 3 (September 1, 2024): 1331. http://dx.doi.org/10.11591/ijpeds.v15.i3.pp1331-1338.
Full textShurenkov, V. V. "On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes." Advanced Materials Research 1016 (August 2014): 521–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1016.521.
Full textSu, Xinran. "The Retrospect and Prospect of GaN-Based Schottky Diode." Journal of Physics: Conference Series 2381, no. 1 (December 1, 2022): 012119. http://dx.doi.org/10.1088/1742-6596/2381/1/012119.
Full textZemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.
Full textOstapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov, and Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures." Inventions 7, no. 4 (October 18, 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
Full textKolesnikov, Maksim, M. Kharchenko, V. Dorohov, and Konstantin Zolnikov. "Application of semiconductor electronics products in extreme conditions." Modeling of systems and processes 16, no. 1 (March 29, 2023): 46–56. http://dx.doi.org/10.12737/2219-0767-2023-16-1-46-56.
Full textGrekhov, Igor' V., and Gennadii A. Mesyats. "Nanosecond semiconductor diodes for pulsed power switching." Physics-Uspekhi 48, no. 7 (July 31, 2005): 703–12. http://dx.doi.org/10.1070/pu2005v048n07abeh002471.
Full textGrehov, Igor' V., and Gennadii A. Mesyats. "Nanosecond semiconductor diodes for pulsed power switching." Uspekhi Fizicheskih Nauk 175, no. 7 (2005): 735. http://dx.doi.org/10.3367/ufnr.0175.200507c.0735.
Full textAlatise, Olayiwola, Arkadeep Deb, Erfan Bashar, Jose Ortiz Gonzalez, Saeed Jahdi, and Walid Issa. "A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability." Energies 16, no. 11 (May 28, 2023): 4380. http://dx.doi.org/10.3390/en16114380.
Full textPlesca, Adrian, and Lucian Mihet-Popa. "Thermal Analysis of Power Rectifiers in Steady-State Conditions." Energies 13, no. 8 (April 15, 2020): 1942. http://dx.doi.org/10.3390/en13081942.
Full textZemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization." WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (June 30, 2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.
Full textKarushkin, M. F. "Frequency multipliers on semiconductor diode structures." Технология и конструирование в электронной аппаратуре, no. 3 (2018): 22–37. http://dx.doi.org/10.15222/tkea2018.3.22.
Full textMecke, R. "Multilevel inverter with active clamping diodes for energy efficiency improvement." Renewable Energy and Power Quality Journal 20 (September 2022): 138–42. http://dx.doi.org/10.24084/repqj20.245.
Full textIvanov A.S., Pavelyev D.G., Obolensky S.V., and Obolenskaya E.S. "Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier." Technical Physics 92, no. 13 (2022): 2071. http://dx.doi.org/10.21883/tp.2022.13.52223.133-21.
Full textKitabatake, M., J. Sameshima, Osamu Ishiyama, K. Tamura, H. Ohshima, N. Sigiyama, Y. Yamashita, T. Tanaka, J. Senzaki, and H. Matsuhata. "The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films." Materials Science Forum 740-742 (January 2013): 451–54. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.451.
Full textSharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi, and N. Ummal Salmaan. "Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics." International Journal of Polymer Science 2022 (September 13, 2022): 1–10. http://dx.doi.org/10.1155/2022/8331886.
Full textHarada, T., S. Ito, and A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation." Science Advances 5, no. 10 (October 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.
Full textИванов, А. С., Д. Г. Павельев, С. В. Оболенский, and Е. С. Оболенская. "Радиационная стойкость источника субтерагерцового излучения из гетеродина на генераторе на диоде Ганна и умножителя на полупроводниковой сверхрешетке." Журнал технической физики 91, no. 10 (2021): 1501. http://dx.doi.org/10.21883/jtf.2021.10.51362.133-21.
Full textZakutayev, Andriy. "(Invited) Ga2O3 Semiconductor Devices for High-Temperature Operation." ECS Meeting Abstracts MA2024-01, no. 32 (August 9, 2024): 1558. http://dx.doi.org/10.1149/ma2024-01321558mtgabs.
Full textShenai, Krishna, and Abhiroop Chattopadhyay. "Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes." IEEE Transactions on Electron Devices 62, no. 2 (February 2015): 359–65. http://dx.doi.org/10.1109/ted.2014.2371775.
Full textKim, Junghun, and Kwangsoo Kim. "4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance." Energies 13, no. 18 (September 4, 2020): 4602. http://dx.doi.org/10.3390/en13184602.
Full textSticklus, Jan, Peter Adam Hoeher, and Martin Hieronymi. "Experimental Characterization of Single-Color Power LEDs Used as Photodetectors." Sensors 20, no. 18 (September 11, 2020): 5200. http://dx.doi.org/10.3390/s20185200.
Full textNakayama, Koji, Takeharu Kuroiwa, and Hiroshi Yamaguchi. "13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters." Japanese Journal of Applied Physics 61, no. 1 (December 22, 2021): 014001. http://dx.doi.org/10.35848/1347-4065/ac3725.
Full textDuyen-Thi Nguyen, Khanh Nguyen, Duc-Minh Truong, and Huy-Binh Do. "Electrical Properties of GaN/Ga2O3 P-N Junction Diodes: A TCAD Study." Journal of Technical Education Science 19, SI03 (August 28, 2024): 7–12. http://dx.doi.org/10.54644/jte.2024.1481.
Full textLau, Wai Shing. "Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1323. http://dx.doi.org/10.1149/ma2022-01311323mtgabs.
Full textDas, Mrinal K., David Grider, Scott Leslie, Ravi Raju, Michael Schutten, and Allen Hefner. "10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies." Materials Science Forum 717-720 (May 2012): 1225–28. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1225.
Full textMajdoul, Radouane, Abelwahed Touati, Abderrahmane Ouchatti, Abderrahim Taouni, and Elhassane Abdelmounim. "A nine-switch nine-level converter new topology with optimal modulation control." International Journal of Power Electronics and Drive Systems (IJPEDS) 12, no. 2 (June 1, 2021): 932. http://dx.doi.org/10.11591/ijpeds.v12.i2.pp932-942.
Full textIvanov, Pavel A., and Igor V. Grekhov. "Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode." Materials Science Forum 740-742 (January 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.
Full textLAUDATU, OVIDIU-DORIN, DRAGOS NICULAE, MIHAI IORDACHE, MARIA-LAVINIA BOBARU, and MARILENA STĂNCULESCU. "EXPERIMENTAL ANALYSIS OF POWER SEMICONDUCTOR ELEMENTS USED IN FLYBACK CONVERTERS." REVUE ROUMAINE DES SCIENCES TECHNIQUES — SÉRIE ÉLECTROTECHNIQUE ET ÉNERGÉTIQUE 69, no. 1 (April 4, 2024): 67–72. http://dx.doi.org/10.59277/rrst-ee.2024.1.12.
Full textLeppänen, J., G. Ross, V. Vuorinen, J. Ingman, J. Jormanainen, and M. Paulasto-Kröckel. "A humidity-induced novel failure mechanism in power semiconductor diodes." Microelectronics Reliability 123 (August 2021): 114207. http://dx.doi.org/10.1016/j.microrel.2021.114207.
Full textMATSUMOTO, Mitsuhiro, and Takashi YABE. "GaAs/AlGaAs High-Power Semiconductor Laser Diodes for Optical Disks." Review of Laser Engineering 24, no. 3 (1996): 380–87. http://dx.doi.org/10.2184/lsj.24.380.
Full textKobayashi, K., and I. Mito. "High light output-power single-longitudinal-mode semiconductor laser diodes." IEEE Transactions on Electron Devices 32, no. 12 (December 1985): 2594–602. http://dx.doi.org/10.1109/t-ed.1985.22389.
Full textHenderson, I. A., and J. McGhee. "A boundary determined Auger recombination model for semiconductor power diodes." Mathematical Modelling 8 (1987): 279–82. http://dx.doi.org/10.1016/0270-0255(87)90590-2.
Full textKobayashi, K., and I. Mito. "High light output-power single-longitudinal-mode semiconductor laser diodes." Journal of Lightwave Technology 3, no. 6 (1985): 1202–10. http://dx.doi.org/10.1109/jlt.1985.1074335.
Full textUzuka, Tetsuo, and Eisuke Masada. "High Speed Rail Awaits the next Breakthrough of Power Semiconductors." Materials Science Forum 778-780 (February 2014): 1071–76. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1071.
Full textRouger, Nicolas, and Aurélien Maréchal. "Design of Diamond Power Devices: Application to Schottky Barrier Diodes." Energies 12, no. 12 (June 21, 2019): 2387. http://dx.doi.org/10.3390/en12122387.
Full textDang, Chaoqun, Anliang Lu, Heyi Wang, Hongti Zhang, and Yang Lu. "Diamond semiconductor and elastic strain engineering." Journal of Semiconductors 43, no. 2 (February 1, 2022): 021801. http://dx.doi.org/10.1088/1674-4926/43/2/021801.
Full textChughtai, M. T. "A Realization of Stabilizing the Output Light Power from a Laser Diode: A Practical Approach." Engineering, Technology & Applied Science Research 11, no. 4 (August 21, 2021): 7370–74. http://dx.doi.org/10.48084/etasr.4276.
Full textBourget, C. Michael. "An Introduction to Light-emitting Diodes." HortScience 43, no. 7 (December 2008): 1944–46. http://dx.doi.org/10.21273/hortsci.43.7.1944.
Full textAhmad, Habib, Zachary Engel, Christopher M. Matthews, Sangho Lee, and W. Alan Doolittle. "Realization of homojunction PN AlN diodes." Journal of Applied Physics 131, no. 17 (May 7, 2022): 175701. http://dx.doi.org/10.1063/5.0086314.
Full textGrgić, Ivan, Dinko Vukadinović, Mateo Bašić, and Matija Bubalo. "Calculation of Semiconductor Power Losses of a Three-Phase Quasi-Z-Source Inverter." Electronics 9, no. 10 (October 6, 2020): 1642. http://dx.doi.org/10.3390/electronics9101642.
Full textHuang, Jack Jia-Sheng, C. K. Wang, and Yu-Heng Jan. "Three Cases of Gradual Degradation Mode Analysis of Semiconductor Laser Diodes." Modern Applied Science 15, no. 6 (October 26, 2021): 27. http://dx.doi.org/10.5539/mas.v15n6p27.
Full textChimento, Filippo, Muhammad Nawaz, Niccoló Mora, and Salvatore Tomarchio. "A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators." Materials Science Forum 740-742 (January 2013): 1089–92. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1089.
Full textKarushkin, M. F. "Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 2. Stabilizing microwave parameters of synchronized generators." Технология и конструирование в электронной аппаратуре, no. 3-4 (2021): 17–29. http://dx.doi.org/10.15222/tkea2021.3-4.17.
Full textHan, Lili, Zhaowei Wang, Nikita Yu Gordeev, Mikhail V. Maximov, Xiansheng Tang, Artem A. Beckman, Grigoriy O. Kornyshov, et al. "Progress of Edge-Emitting Diode Lasers Based on Coupled-Waveguide Concept." Micromachines 14, no. 6 (June 20, 2023): 1271. http://dx.doi.org/10.3390/mi14061271.
Full textSužiedėlis, Algirdas, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Karolis Požela, and Maksimas Anbinderis. "Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures." Sensors 23, no. 3 (January 28, 2023): 1441. http://dx.doi.org/10.3390/s23031441.
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