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Journal articles on the topic 'Porous silicon'

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Author: Grafiati

Published: 4 June 2021

Last updated: 31 July 2024

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1

Syari’ati, Ali, and Veinardi Suendo. "Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon." Materials Science Forum 737 (January 2013): 60–66. http://dx.doi.org/10.4028/www.scientific.net/msf.737.60.

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Porous silicon (p-Si) is a well-known silicon based material that can emit visible light at room temperature. The radiative recombination that originated from quantum confinement effect shows photoluminescence (PL) in red, while the defect on silicon oxide at the surface of p-Si shows in blue-green region. Porous silicon can be synthesized through two methods; wet-etching and electrochemical anodization using hydrofluoric acid as the main electrolyte. The electrochemical anodization is more favorable due to faster etching rate at the surface than the conventional wet-etching method. The objective of this research is to show that both of porous silicons can be synthesized using the same main electrolyte but by varying the reaction environment during anodization/etching process. Here, we shows the wet-etching method that enhanced by polarization concentration will produce porous silicon with silicon oxide defects by means blue-green emission, while direct electrochemical anodization will produce samples that emit red PL signal. The effect of introducing KOH into the electrolyte was also studied in the case of enhanced-wet-etching method. Surface morphology of porous silicon and their photoluminescence were observed by Scanning Electron Microscope and PL spectroscopy, respectively.

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2

KOSHIDA, Nobuyoshi, Hideki KOYAMA, and Yoshiyuki SUDA. "Porous Silicon." Hyomen Kagaku 14, no. 2 (1993): 85–89. http://dx.doi.org/10.1380/jsssj.14.85.

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3

Hamilton, B. "Porous silicon." Semiconductor Science and Technology 10, no. 9 (September 1, 1995): 1187–207. http://dx.doi.org/10.1088/0268-1242/10/9/001.

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4

Olenych, I. B. "Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates." Semiconductor Physics Quantum Electronics and Optoelectronics 15, no. 4 (December 12, 2012): 382–85. http://dx.doi.org/10.15407/spqeo15.04.382.

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5

Olenych, I. B., L. S. Monastyrskyi, and B. P. Koman. "Electrical Properties of Silicon-Oxide Heterostructures on the Basis of Porous Silicon." Ukrainian Journal of Physics 62, no. 2 (February 2017): 166–71. http://dx.doi.org/10.15407/ujpe62.02.0166.

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6

Kim, K. B., A. S. Lenshin, F. M. Chyragov, and S. I. Niftaliev. "FORMATION OF NANOSTRUCTURED TIN OXIDE FILM ON POROUS SILICON." Azerbaijan Chemical Journal, no. 3 (September 19, 2023): 83–89. http://dx.doi.org/10.32737/0005-2531-2023-3-83-89.

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Porous silicon is actively used in the fabrication of sensors and detectors because of its large specific surface area, which is an important characteristic for gas adsorption. To improve the operating parameters of the sensors and increase the stability of operation, a film of tin oxide was deposited on the substrate of porous silicon by vacuum-thermal evaporation. The choice of tin is due to its wide forbidden zone, low cost, and high sensitivity. Porous silicon was obtained by the electrochemical anodization of single-crystalline silicon KEF (100). The data on morphology, composition and optical properties of the initial sample of porous silicon and the sample with deposited tin have been obtained by scanning electron microscopy, infrared and photoluminescence spectroscopy. It was found that the chemical tin deposition on porous silicon leads to the formation of composite structure, which significantly prevents further oxidation of the porous layer during storage, and to the shift of the luminescence band maximum

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7

Suhail, Abdulla M. "Carbon nanotubes -porous silicon high sensitivity infrared detector." International Journal of Scientific Research 2, no. 1 (June 1, 2012): 209–10. http://dx.doi.org/10.15373/22778179/jan2013/74.

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8

Lavallard, P., and R. A. Suris. "Silicon needles in porous silicon." Thin Solid Films 276, no. 1-2 (April 1996): 293–95. http://dx.doi.org/10.1016/0040-6090(95)08100-3.

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9

Pavesi, L., R. Chierchia, P. Bellutti, A. Lui, F. Fuso, M. Labardi, L. Pardi, et al. "Light emitting porous silicon diode based on a silicon/porous silicon heterojunction." Journal of Applied Physics 86, no. 11 (December 1999): 6474–82. http://dx.doi.org/10.1063/1.371711.

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10

Karlash, A. Yu. "Impedance spectroscopy of composites based on porous silicon and silica aerogel for sensor applications." Functional Materials 20, no. 1 (March 25, 2013): 68–74. http://dx.doi.org/10.15407/fm20.01.068.

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11

NATARAJAN, B., V. RAMAKRISHNAN, V. VASU, and S. RAMAMURTHY. "EFFECT OF CHLORINATION ON PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON." International Journal of Nanoscience 06, no. 01 (February 2007): 17–22. http://dx.doi.org/10.1142/s0219581x07004249.

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The surface passivation of porous silicon plays a significant role in emission efficiency of the material. Photoluminescence (PL) studies were carried out for p-type porous silicon and chlorinated porous silicon to understand the effect of surface passivation on porous silicon. Visible photoluminescence was observed at 625 nm for both porous silicon and chlorinated porous silicon. The whole sample exhibits a PL band at red region and intensity decreased in chlorinated porous silicon. This paper presents an analytical solution that covers contributions from the components of silicon tetra chloride interface, silicon backbone, and voids using a serial–parallel capacitance method. Simulation study indicates that there is a good correlation between theory and observed PL.

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12

Lee, Bong Ju, Sung Gi Kim, and Hong Lae Sohn. "Optically Encoded Smart Dust from DBR Porous Silicon." Key Engineering Materials 321-323 (October 2006): 53–56. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.53.

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Distributed Bragg reflector (DBR) porous silicons exhibiting unique reflectivity were successfully obtained by an electrochemical etching of silicon wafer using square wave currents. Optically encoded smart dust which retained optical reflectivity was obtained from DBR porous silicon film in organic solution by using ultra-sono method. The size of optically encoded smart dust was measured by field emission scanning electron micrograph (FESEM) and was about 500 nm to few microns depending on the duration of sonication. Investigation for the optical characteristics of smart dust revealed that smart dust could be useful for application such as chemical sensor for detecting organic vapors.

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13

Bilik, T. Yu. "Surface morphology of microstructured porous silicon." Electronics and Communications 16, no. 3 (March 28, 2011): 49–54. http://dx.doi.org/10.20535/2312-1807.2011.16.3.264283.

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In the paper surface morphology and pore structure of stain etched porous silicon layers depending on wafer type and characteristics are analysed. SEM-microphotography shows that pore’s geometry correlate with defects density on the wafer surface. In the case of high quantity of defects (low-resistance or matt wafers) pores are 10µm long and 100 nm width. On polished and high-resistance wafers pores have circular shape with diameter up to 1 µm. Thickness of porous layer depends on etching time

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14

Omar, Khalid, and Khaldun A. Salman. "Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)." Journal of Nano Research 46 (March 2017): 45–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.46.45.

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Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crystallite sizes for the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers were 20.57 and 17.45 nm at 20 and 30 min, respectively, due to the increase in broadening of the full width at half maximum. Photoluminescence peaks for porous silicon layers based on crystalline silicon n-type (100) and (111) wafers increased with growing porosity and a great blue shift in luminescence. The minimum effective coefficient of reflection was obtained from porous silicon layers based on the crystalline silicon n-type (100) wafer compared with n-type (111) wafer and as-grown at different etching times. Porous silicon layers based on the crystalline silicon n-type (100) wafer at 20 min etching time exhibited excellent light trapping at wavelengths ranging from 400 to 1000 nm. Thus, fabricated crystalline silicon solar cells based on porous silicon (100) anti-reflection coating layers achieved the highest efficiency at 15.50% compared to porous silicon (111) anti-reflection coating layers. The efficiency is characterized applying I-V characterization system under 100 mW/cm2 illumination conditions.

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15

Qu, Yongquan, Hailong Zhou, and Xiangfeng Duan. "Porous silicon nanowires." Nanoscale 3, no. 10 (2011): 4060. http://dx.doi.org/10.1039/c1nr10668f.

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16

ZURER, PAMELA. "POROUS SILICON BIOSENSOR." Chemical & Engineering News 75, no. 37 (September 15, 1997): 7. http://dx.doi.org/10.1021/cen-v075n037.p007.

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17

Searson, P. C. "Porous silicon membranes." Applied Physics Letters 59, no. 7 (August 12, 1991): 832–33. http://dx.doi.org/10.1063/1.105250.

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18

Lérondel, G., G. Amato, A. Parisini, and L. Boarino. "Porous silicon nanocracking." Materials Science and Engineering: B 69-70 (January 2000): 161–66. http://dx.doi.org/10.1016/s0921-5107(99)00245-7.

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19

Pavesi, L., C. Mazzoleni, R. Guardini, M. Cazzanelli, V. Pellegrini, and A. Tredicucci. "Porous-silicon microcavities." Il Nuovo Cimento D 18, no. 10 (October 1996): 1213–23. http://dx.doi.org/10.1007/bf02464699.

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20

Frohnhoff, Stephan, and Michael G. Berger. "Porous silicon superlattices." Advanced Materials 6, no. 12 (December 1994): 963–65. http://dx.doi.org/10.1002/adma.19940061214.

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21

Martínez-Duart, José M., Vitaly P. Parkhutik, Ricardo Guerrero-Lemus, and José D. Moreno. "Electroluminescent porous silicon." Advanced Materials 7, no. 2 (February 1995): 226–28. http://dx.doi.org/10.1002/adma.19950070228.

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22

Mimura, H., T. Matsumoto, and Y. Kanemitsu. "Light emitting devices using porous silicon and porous silicon carbide." Solid-State Electronics 40, no. 1-8 (January 1996): 501–4. http://dx.doi.org/10.1016/0038-1101(95)00278-2.

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23

Naderi, N., and M. R. Hashim. "Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates." Journal of Alloys and Compounds 552 (March 2013): 356–62. http://dx.doi.org/10.1016/j.jallcom.2012.11.085.

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24

ZHAO, YUE, DONG-SHENG LI, WEN-BIN SANG, DE-REN YANG, and MIN-HUA JIANG. "PHOTOLUMINESCENCE, COMPOSITION AND MICROSTRUCTURE OF POROUS SILICON PREPARED BY DIFFERENT SUBSTRATES." Modern Physics Letters B 22, no. 12 (May 20, 2008): 1211–20. http://dx.doi.org/10.1142/s0217984908015280.

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In this paper, the microstructure of porous silicon was discussed by scanning electron microscopy and Raman spectra. The compositions of the samples were studied by X-ray diffraction and electron diffraction. The luminescent properties of porous silicon were explored by the PL measurements. The results showed that the structure of the top porous silicon prepared by epitaxial silicon consists of meso-pores and that of the underlying porous silicon consists of macro-pores. Furthermore, the structure of porous silicon prepared by heavily doped silicon is made of nano-pores. The composition of porous silicon consists of the single-crystal phase, poly-crystal phase and amorphous-crystal phase, respectively. In addition, the luminescence of porous silicon may come from the defects on the silicon-rod surface and in Si complexes including siloxene, Si oxide and Si hydrides, and may not be related to amorphous phase and nano-phase.

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25

Eswar, Kevin Alvin, F. S. Husairi, Azlinda Ab Aziz, Mohamad Rusop, and Saifollah Abdullah. "Photoluminescence Spectra of ZnO Thin Film Composed Nanoparticles on Silicon and Porous Silicon." Advanced Materials Research 832 (November 2013): 843–47. http://dx.doi.org/10.4028/www.scientific.net/amr.832.843.

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ZnO thin film was successfully deposited on different substrate by sol-gel spin coating. Zinc acetate dihydrates, diethanolamine and isopropyl were used as starting material, stabilizer and solvent respectively. Two different substrate used in this work are p-type silicon wafer and porous silicon. Porous silicon was prepared by electrochemical etching. In order to study the surface morphology, field emission scanning electron microscopy (FESEM) was employed. It is found that, ZnO thin film was composed by ZnO nanoparticles. The averages size ZnO nanoparticle is 23.5 nm on silicon and 17.76 nm on porous silicon. Based on Atomic Force Microscopy (AFM) topology analysis, surface of ZnO thin films on porous silicon was rougher compared to ZnO thin films on silicon due to substrate surface effect. Photoluminescence spectra shows two peaks are appear for ZnO thin film on silicon and three peaks are appear for ZnO thin film on porous silicon. PL spectra peaks of ZnO thin film on silicon are correspond to ZnO and ZnO native defects while peaks of PL spectra on porous silicon are corresponds to ZnO, ZnO native defects and porous silicon.

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26

Ibrahim, Isam M. "The effect of current density on the structures and photoluminescence of n-type porous silicon." Iraqi Journal of Physics (IJP) 15, no. 34 (January 8, 2019): 15–28. http://dx.doi.org/10.30723/ijp.v15i34.116.

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Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased and FESEM showed that a homogeneous pattern and confirms the formation of uniform porous silicon. The chemical bonding and structure were investigated by using Fourier transformation infrared spectroscopy (FTIR). The band gap of the samples obtained from photoluminescence (PL). These results showed that the band gap of porous silicon increase with increasing porosity.

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27

Hurbo, A. D., A. V. Klimenka, and V. P. Bondarenko. "FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON." Doklady BGUIR, no. 6 (October 3, 2019): 31–37. http://dx.doi.org/10.35596/1729-7648-2019-124-6-31-37.

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Porous silicon layers were formed on a p-type silicon wafers by electrochemical anodisation. Dependencies of thickness and porosity of porous silicon layers as well as effective valence of silicon dissolution versus anodizing time and current density were obtained and analysed. A mathematical model for growth of layers of porous silicon was developed.

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28

ZHAO, YUE, DONGSHENG LI, WENBIN SANG, DEREN YANG, and MINHUA JIANG. "STUDY OF OPTICAL PROPERTIES OF POROUS SILICON PRODUCED BY METAL-AID." Modern Physics Letters B 21, no. 29 (December 20, 2007): 1989–97. http://dx.doi.org/10.1142/s0217984907014401.

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We presented fluorescence spectra and cathode-luminescence spectra of as-prepared porous silicon under different preparation conditions. The luminescence of porous silicon may be related to the luminescent centers on porous silicon surface. The luminescent efficiency depended on the porosity of porous silicon, which further depended on the oxidative level of porous silicon with metal assistance. Under back illumination, the higher the oxidative degree of the metal is, the higher is the porosity and the luminescent efficiency of porous silicon. But under front illumination, the results exhibited an opposite tendency, which can be explained by the formation theory of PS.

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29

Huang, Yuan Ming, Qing Lan Ma, and Bao Gai Zhai. "Development of Porous Silicon Based Visible Light Photodetectors." Key Engineering Materials 538 (January 2013): 341–44. http://dx.doi.org/10.4028/www.scientific.net/kem.538.341.

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Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

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30

Astrova, E. V., A. A. Lebedev, A. D. Remenyuk, V. Yu Rud', and Yu V. Rud'. "Photosensitivity of silicon–porous silicon heterostructures." Thin Solid Films 297, no. 1-2 (April 1997): 129–31. http://dx.doi.org/10.1016/s0040-6090(96)09531-4.

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31

Astrova, E. V., A. A. Lebedev, A. D. Remenyuk, Yu V. Rud’, and V. Yu Rud’. "Photosensitivity of porous silicon-silicon heterostructures." Semiconductors 31, no. 2 (February 1997): 121–23. http://dx.doi.org/10.1134/1.1187137.

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32

Gagarina A.Yu., Bogoslovskaya L.S., Spivak Yu. M., Novikova K.N., Kuznetsov A., and Moshnikov V.A. "Synthesis of arrays nanostructured porous silicon wires in electron conductivity type silicon with crystallographic orientation (111)." Technical Physics 68, no. 2 (2023): 254. http://dx.doi.org/10.21883/tp.2023.02.55481.109-22.

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The method of modified metal-assisted electrochemical etching was proposed and arrays of nanostructured porous silicon wires on n-type monocrystalline silicon substrate with crystallographic orientation (111) were obtained. The influence of the electrolyte composition at the second stage of obtaining on the morphology of silicon wires by scanning electron microscopy methods was revealed. The phase composition of porous silicon wires was controlled by Raman spectroscopy. Keywords: Porous silicon,porous Silicon nanowires, MACE, Nanomaterials, Raman spectroscopy.

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33

Lee, Chi Yuan, Shuo Jen Lee, Ching Liang Dai, and Chih Wei Chuang. "Application of Porous Silicon on the Gas Diffusion Layer of Micro Fuel Cells." Key Engineering Materials 364-366 (December 2007): 849–54. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.849.

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This investigation utilizes porous silicon as the gas diffusion layer (GDL) in a micro fuel cell. Pt catalyst is deposited on the surface of, and inside the porous silicon, to improve the performance of a fuel cell, and the Pt metal that remains on the rib is used to form a micro thermal sensor in a single lithographic process. Porous silicon with Pt catalyst replaces traditional GDL, and the relationships between porosity and pore diameter, and the performance of the fuel cell are discussed. In this work, electrochemical etching technology is employed to form porous silicon to replace the gas diffusion layer of a fuel cell. This work focuses on porous silicon with dimensions of tens of micrometers. Porous silicon was applied to the gas diffusion layer of a micro fuel cell. Boron-doped 20 '-cm n-type (100)-oriented doubly polished silicon wafer was used on both sides. The process is performed to etch a fuel channel on one side of a silicon wafer, and then electrochemical etching was adopted to form porous silicon on the other side to fabricate one silicon wafer that combines porous silicon with a fuel channel on a silicon wafer to minimize a fuel cell. The principles on which the method is based, the details of fabrication flows, the set-up and the experimental results are all presented.

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34

Amjad Hussein Jassem. "Effect of photo chemical etching and electro chemical etching on the topography of porous silicon wafers surfaces." Tikrit Journal of Pure Science 24, no. 4 (August 4, 2019): 52–56. http://dx.doi.org/10.25130/tjps.v24i4.399.

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In This research we study the effect of photo chemical etching and electrochemical etching on topography of porous silicon surfaces, the results showed that photo chemical etching produced roughness silicon layer which can have thickness be less of porous silicon layer which is produced by electro chemical etching When all the wafers have same etching time and hydrofluoric solution (HF) concentration, the wafers have same resistance (10 Ω.cm). Also the results showed the roughness of porous silicon layers produced by electro chemical method which is bigger than the roughness of porous silicon layers produced by photo chemical method and the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by electro chemical method (1.55(µm) ((0.99(µm)) and ((1.21(µm) respectively), the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by photo chemical method 0.63)) nm -1.55)) (µm) ),so the (84.9 (nm)- and (3.94(nm) respectively . This is reinforces because of using the electro chemical to etching the wafer surf ace of bulk silicon and changing it to roughness silicon surface be share in success of many practicalities.

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35

Tomaa, Ghasaq Ali, and Alaa Jabbar Ghazai. "The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films." Iraqi Journal of Physics (IJP) 19, no. 50 (September 1, 2021): 77–83. http://dx.doi.org/10.30723/ijp.v19i50.665.

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Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.

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36

Feng, David Jui-Yang, Hung-Yin Lin, James L. Thomas, Hsing-Yu Wang, Chien-Yu Lin, Chen-Yuan Chen, Kai-Hsi Liu, and Mei-Hwa Lee. "Supercritical Carbon Dioxide Treatment of Porous Silicon Increases Biocompatibility with Cardiomyocytes." International Journal of Molecular Sciences 22, no. 19 (October 2, 2021): 10709. http://dx.doi.org/10.3390/ijms221910709.

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Porous silicon is of current interest for cardiac tissue engineering applications. While porous silicon is considered to be a biocompatible material, it is important to assess whether post-etching surface treatments can further improve biocompatibility and perhaps modify cellular behavior in desirable ways. In this work, porous silicon was formed by electrochemically etching with hydrofluoric acid, and was then treated with oxygen plasma or supercritical carbon dioxide (scCO2). These processes yielded porous silicon with a thickness of around 4 μm. The different post-etch treatments gave surfaces that differed greatly in hydrophilicity: oxygen plasma-treated porous silicon had a highly hydrophilic surface, while scCO2 gave a more hydrophobic surface. The viabilities of H9c2 cardiomyocytes grown on etched surfaces with and without these two post-etch treatments was examined; viability was found to be highest on porous silicon treated with scCO2. Most significantly, the expression of some key genes in the angiogenesis pathway was strongly elevated in cells grown on the scCO2-treated porous silicon, compared to cells grown on the untreated or plasma-treated porous silicon. In addition, the expression of several apoptosis genes were suppressed, relative to the untreated or plasma-treated surfaces.

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37

Jassem, Amjad Hussein. "Effect of photo chemical etching and electro chemical etching on the topography of porous silicon wafers surfaces." Tikrit Journal of Pure Science 24, no. 4 (August 4, 2019): 52. http://dx.doi.org/10.25130/j.v24i4.845.

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In This research we study the effect of photo chemical etching and electrochemical etching on topography of porous silicon surfaces, the results showed that photo chemical etching produced roughness silicon layer which can have thickness be less of porous silicon layer which is produced by electro chemical etching When all the wafers have same etching time and hydrofluoric solution (HF) concentration, the wafers have same resistance (10 Ω.cm). Also the results showed the roughness of porous silicon layers produced by electro chemical method which is bigger than the roughness of porous silicon layers produced by photo chemical method and the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by electro chemical method (1.55(µm) ((0.99(µm)) and ((1.21(µm) respectively), the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by photo chemical method 0.63)) nm -1.55)) (µm) ),so the (84.9 (nm)- and (3.94(nm) respectively . This is reinforces because of using the electro chemical to etching the wafer surf ace of bulk silicon and changing it to roughness silicon surface be share in success of many practicalities. http://dx.doi.org/10.25130/tjps.24.2019.072

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38

Lenshin, Alexander S., Kseniya B. Kim, Boris L. Agapov, Vladimir M. Kashkarov, Anatoly N. Lukin, and Sabukhi I. Niftaliyev. "Structure and composition of a composite of porous silicon with deposited copper." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 25, no. 3 (July 7, 2023): 359–66. http://dx.doi.org/10.17308/kcmf.2023.25/11259.

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Porous silicon is a promising nanomaterial for optoelectronics and sensorics, as it has a large specific surface area and is photoluminescent under visible light. The deposition of copper particles on the surface of porous silicon will greatly expand the range of applications of the resulting nanocomposites. Copper was chosen due to its low electrical resistivity and high resistance to electromigration compared to other metals. The purpose of this research was to study changes in the structure and composition of porous silicon after the chemical deposition of copper. Porous silicon was obtained by the anodisation of monocrystalline silicon wafers KEF (100) (electronic-grade phosphorus-doped silicon) with an electrical resistivity of 0.2 Ohm·cm. An HF solution in isopropyl alcohol with the addition of H2O2 solution was used to etch the silicon wafers. The porosity of the samples was about 70 %. The porous silicon samples were immersed in copper sulphate solution (CuSO4·5H2O) for 7 days. We used scanning electron microscopy, IR spectroscopy, and ultrasoft X-ray emission spectroscopy to obtain data on the morphology and composition of the initial sample and the sample with deposited copper. The chemical deposition of copper on porous silicon showed a significant distortion of the pore shape as well as the formation of large cavities inside the porous layer. However, in the lower part the pore morphology remained the same as in the original sample. It was found that the chemical deposition of copper on porous silicon leads to copper penetrating into the porous layer, the formation of a composite structure, and it prevents the oxidation of the porous layer during storage. Thus, it was demonstrated that the chemical deposition of copper on a porous silicon surface leads to visible changes in the surface morphology and composition. Therefore, it should have a significant impact on the catalytic, electrical, and optical properties of the material.

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39

Husairi, Fadzilah Suhaimi, S. A. M. Zobir, Mohamad Rusop, and Saifolah Abdullah. "The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method." Advanced Materials Research 686 (April 2013): 28–32. http://dx.doi.org/10.4028/www.scientific.net/amr.686.28.

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In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

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40

Husairi, F. S., S. A. M. Zobir, Mohamad Rusop Mahmood, and Saifollah Abdullah. "The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method." Advanced Materials Research 667 (March 2013): 477–81. http://dx.doi.org/10.4028/www.scientific.net/amr.667.477.

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Abstract:

In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

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41

Liu, Zhi-Yuan, Ying-Qi Shang, Hai-Chao Yu, Hong Qi, Yan Zhang, Jing Chen, and Ya-Lin Wu. "Research on micro-cavity structure processing technology based on porous silicon." Modern Physics Letters B 34, no. 29 (June 24, 2020): 2050319. http://dx.doi.org/10.1142/s0217984920503194.

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Aiming at the problem of heterogeneity of sealed cavity in silicon microstructure processing technology, the technology of preparing micro-cavity by using porous silicon sacrificial layer is proposed. The effect of current density on the preparation of porous silicon and the effect of porous silicon with different porosity on the formation of micro-cavity in the preparation process of porous silicon were studied. Different process parameters were selected for experiments and the prepared micro-cavities were tested and analyzed. According to the test results, the suitable electrochemical corrosion process parameters were selected to prepare porous silicon, and the micro-cavity was realized by changing the process parameters, which greatly increased the application fields of micro-sensors and micro-actuators.

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Huang, Yuan Ming, Qing Lan Ma, and Bao Gai Zhai. "Origin of Blue Photoluminescence from Naturally Oxidized Porous Silicon." Solid State Phenomena 181-182 (November 2011): 374–77. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.374.

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Upon the 325 nm excitation from a helium-cadmium laser, the photoluminescence (PL) from aged porous silicon was investigated with fluorescence spectroscopy. Each PL spectrum of the aged porous silicon films contained two luminescent bands, one of the luminescent bands peaked at about 466.7 nm whereas the other luminescent band peaked at about 596.1 nm. The origin of the blue PL from aged porous silicon was discussed, and our results indicated that the blue photoluminescence of porous silicon films originated from the silicon oxide itself.

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Zhang, Baoguo, Ling Tong, Lin Wu, Xiaoyu Yang, Zhiyuan Liao, Yilai Zhou, Ya Hu, and Hailiang Fang. "Preparation of porous silicon/metal composite negative electrode materials and their application in high-energy lithium batteries." Journal of Physics: Conference Series 2263, no. 1 (April 1, 2022): 012021. http://dx.doi.org/10.1088/1742-6596/2263/1/012021.

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Abstract Porous silicon/metal composites have huge specific surface area, rich pore structure, tough framework system and low SEI film formation rate, and have great application prospects in the field of high-energy lithium batteries. Porous silicon/metal composites have abundant pore structure, which can greatly alleviate the volume effect of silicon during charging and discharging. The introduction of metal can increase the conduction rate and reduce the formation rate of SEI film. However, the development of a facile and rapid method to synthesize porous silicon/metal composites remains a challenge for current research. Based on the current research progress of porous silicon/metal composites and related literatures, in this paper, the preparation methods of porous silicon/metal composites in recent years are reviewed in detail, with a focus on their applications in the field of high-energy lithium batteries. Finally, the future development direction of porous silicon/metal composites is further prospected.

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Liu, Jian, Kai Liu, Hong Sheng Wang, Fang Gao, and Rong Liao. "Preparation of Silicon Nitride Porous Ceramics." Key Engineering Materials 512-515 (June 2012): 824–27. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.824.

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A silicon nitride porous ceramics having excellent mechanical strength and dielectric properties can be employed as a wave-transparent material. The silicon nitride porous ceramic contains a plurality of silicon nitride crystal grains with pores formed in grain boundary which forms a three-dimensional network structure. The properties of the silicon nitride porous ceramics was studied , the porous ceramics was prepared by different process parameters, including the pressure of cold isostatic pressing, temperature of sintering and sintering atmosphere, etc.; A high porosity(>50%), high strength(>120MPa), low dielectric properties(ε<3.2) silicon nitride ceramic can be prepared by appropriate process parameters.

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Yang, Lei, Xueming Li, and Yinfang He. "Study on the Stability of Porous Silicon Energetic Materials." Academic Journal of Science and Technology 4, no. 1 (December 5, 2022): 89–91. http://dx.doi.org/10.54097/ajst.v4i1.3262.

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Porous silicon has been widely studied due to its high explosion characteristics, less harm to the environment and compatibility with all silicon based production processes. At present, it has been used in military, national defense and other fields. In this paper, porous silicon was prepared by electrochemical anodic oxidation. The electrolysis time was 35 min, the current density was 50 mA/cm2, and the electrolyte was HF: DMAC=5:1 (volume ratio). The effects of silane coupling agents (KH550 and KH560) and cathodic reduction treatment on the life of porous silicon were investigated. The results show that the life of porous silicon chips treated by cathodic reduction+KH560 is longer, and the morphology of porous silicon chips treated by cathodic reduction+KH560 is better.

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Liu, Lan, Yan Xue, Xiao Ming Ren, and Rui Zhen Xie. "Influence of Electrochemical Etching Parameters on Morphology of Porous Silicon." Advanced Materials Research 1055 (November 2014): 68–72. http://dx.doi.org/10.4028/www.scientific.net/amr.1055.68.

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In order to protect porous silicon from break and enhance it’s porosity and specific surface area, porous silicon is prepared with electrochemical etching method. The charateristic of porous silicon is investigated with SEM and high-speed adsorption surface area and porosity analyzer. The results show that the porous silicon prepared with the method of gradient etching and control of etching time is mechanically stable. The porosity and specfic surface area are improved.

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Savenkov G. G., Kozachuk A. I., Poberezhnaya U. M., Freiman V. M., and Zegrya G. G. "Combustion rate of powdered porous silicon with limited space." Technical Physics Letters 48, no. 2 (2022): 51. http://dx.doi.org/10.21883/tpl.2022.02.52848.18994.

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The method of determination combustion rate of powdered porous silicon with limited space is presented. The values of the combustion rates of porous silicon are close to the values of the rates of explosives. Keywords: porous silicon, combustion rate

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Brito-Neto, José G. A., Kentaro Kondo, and Masanori Hayase. "Porous Gold Structures Templated by Porous Silicon." Journal of The Electrochemical Society 155, no. 1 (2008): D78. http://dx.doi.org/10.1149/1.2804381.

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Manakov, S. M., and Ye Sagidolda. "Investigation of the physical properties of nanoscale porous silicon films." Physical Sciences and Technology 2, no. 1 (2015): 4–8. http://dx.doi.org/10.26577/2409-6121-2015-2-1-4-8.

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Hongyan Zhang, Hongyan Zhang, Rongxia Liu Rongxia Liu, Xiaoyi Lü Xiaoyi Lü, and Zhenhong Jia Zhenhong Jia. "Influence of electrolyte temperature onspectral properties of porous silicon microcavity." Chinese Optics Letters 12, s1 (2014): S12402–312403. http://dx.doi.org/10.3788/col201412.s12402.

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