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Relevant bibliographies by topics / Porous Silicon Nanowires

Academic literature on the topic 'Porous Silicon Nanowires'

Author: Grafiati

Published: 14 March 2023

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Dissertations / Theses
Book chapters
Conference papers

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Journal articles on the topic "Porous Silicon Nanowires"

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Weidemann, Stefan, Maximilian Kockert, Dirk Wallacher, Manfred Ramsteiner, Anna Mogilatenko, Klaus Rademann, and Saskia F. Fischer. "Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms." Journal of Nanomaterials 2015 (2015): 1–11. http://dx.doi.org/10.1155/2015/672305.

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Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi bulk=520 cm−1 →λSi nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

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Qu, Yongquan, Hailong Zhou, and Xiangfeng Duan. "Porous silicon nanowires." Nanoscale 3, no. 10 (2011): 4060. http://dx.doi.org/10.1039/c1nr10668f.

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BALAKRISHNAN, S., V. KRIPESH, and SER CHOONG CHONG. "FABRICATION OF SELF-ORGANIZED METAL NANOWIRE ARRAY USING POROUS ALUMINA TEMPLATE FOR OFF-CHIP INTERCONNECTS." International Journal of Nanoscience 05, no. 04n05 (August 2006): 453–58. http://dx.doi.org/10.1142/s0219581x06004620.

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Porous anodic alumina formation on silicon substrate is an example of a nanostructured porous array that is well-suited as a template for growing metallic nanowires. Commercial silicon wafer deposited with aluminum is used as substrate. Prior to anodization, the aluminum film is cleaned with mixture of acids solution to remove its native oxide growth. Anodization of aluminum film on silicon wafer is performed in oxalic acid solution to generate uniform and self-organized nanoporous alumina film. The pores are in the range of 60 nm diameter and pore density is about 9 × 109/ cm 2. The nanoporous alumina template is filled with nickel nanowires by wet electrodeposition process. After nanowire is grown on silicon wafer, the alumina template is etched and the as grown nickel nanowire forest is patterned using laser pruning method. The crystallinity pattern of the as grown nickel naowire forest is characterized using X-ray diffraction technique.

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Gentsar, P. O., A. V. Stronski, L. A. Karachevtseva, and V. F. Onyshchenko. "Optical Properties of Monocrystalline Silicon Nanowires." Physics and Chemistry of Solid State 22, no. 3 (August 31, 2021): 453–59. http://dx.doi.org/10.15330/pcss.22.3.453-459.

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The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.

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Vlad, Alexandru, Arava Leela Mohana Reddy, Anakha Ajayan, Neelam Singh, Jean-François Gohy, Sorin Melinte, and Pulickel M. Ajayan. "Roll up nanowire battery from silicon chips." Proceedings of the National Academy of Sciences 109, no. 38 (September 4, 2012): 15168–73. http://dx.doi.org/10.1073/pnas.1208638109.

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Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltrate-peel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li+ gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electrically interconnected copper nanoshells are conformally deposited around the silicon nanowires to stabilize the electrodes over extended cycles and provide efficient current collection. Using the above developed process we demonstrate an operational full cell 3.4 V lithium-polymer silicon nanowire (LIPOSIL) battery which is mechanically flexible and scalable to large dimensions.

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Kim, P. SG, Y. H. Tang, T. K. Sham, and S. T. Lee. "Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation." Canadian Journal of Chemistry 85, no. 10 (October 1, 2007): 695–701. http://dx.doi.org/10.1139/v07-054.

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We report a Si K-edge X-ray absorption fine structures (XAFS) study of silicon monoxide (SiO), the starting material for silicon nanowire preparation, its silicon nanowires, and the residue after the preparation of the starting material. The silicon nanowires were condensed onto three different substrates, (i) the wall of the furnace quartz tube, (ii) a porous silicon substrate, and (iii) a Si(100) silicon wafer. It was found that the Si K-edge XAFS of SiO exhibits identifiable spectral features characteristic of Si in 0 and 4 oxidation states as well as in intermediate oxidation states, while the SiO residue primarily shows features of Si(0) and Si(4). The XAFS suggest that SiO is not exactly a simple mixture of Si and SiO2. The silicon nanowires produced by the process exhibit morphology and luminescence property variations that depend on the nature of the substrate. X-ray excited optical luminescence (XEOL) at the O K-edge suggests an efficient energy transfer to the optical decay channel. The results and their implications are discussed.Key words: silicon nanowires, thermal evaporation, silicon monoxide, X-ray absorption fine structures, X-ray excited optical luminescence.

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Qu, Yongquan, Xing Zhong, Yujing Li, Lei Liao, Yu Huang, and Xiangfeng Duan. "Photocatalytic properties of porous silicon nanowires." Journal of Materials Chemistry 20, no. 18 (2010): 3590. http://dx.doi.org/10.1039/c0jm00493f.

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Lee, SeungYeon, Daniel Wratkowski, and Jeong-Hyun Cho. "Patterning Anodic Porous Alumina with Resist Developers for Patterned Nanowire Formation." MRS Proceedings 1785 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.566.

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ABSTRACTFormation of patterned metal and semiconductor (e.g. silicon) nanowires is achieved using anodic aluminum oxide (AAO) templates with porous structures of different heights resulting from an initial step difference made by etching the aluminum (Al) thin film with a photoresist developer prior to the anodization process. This approach allows for the growth of vertically aligned nanowire arrays on a metal substrate, instead of an oriented semiconductor substrate, using an electroplating or a chemical vapor deposition (CVD) process. The vertically aligned metal and semiconductor nanowires defined on a metal substrate could be applied to the realization of vertical 3D transistors, field emission devices, or nano-micro sensors for biological applications.

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Zhuang, Yanli, Tiesong Lin, Peng He, Panpan Lin, Limin Dong, Ziwei Liu, Leiming Wang, Shuo Tian, and Xinxin Jin. "The Formation Process and Strengthening Mechanism of SiC Nanowires in a Carbon-Coated Porous BN/Si3N4 Ceramic Joint." Materials 15, no. 4 (February 9, 2022): 1289. http://dx.doi.org/10.3390/ma15041289.

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Porous BN/Si3N4 ceramics carbon-coated by carbon coating were joined with SiCo38 (wt. %) filler. The formation process and strengthening mechanism of silicon carbide nanowires to the joint were analyzed in detail. The outcome manifests that there is no distinct phase change in the porous BN/Si3N4 ceramic without carbon-coated joint. The highest joint strength was obtained at 1320 °C (~38 MPa). However, a larger number of silicon carbide nanowires were generated in the carbon-coated joints. The highest joint strength of the carbon-coated joint was ~89 MPa at 1340 °C. Specifically, silicon carbide nanowires were formed by the reaction of the carbon coated on the porous BN/Si3N4 ceramic with the SiCo38 filler via the Vapor-Liquid-Solid (VLS) method and established a bridge in the joint. It grows on the β-SiC (111) crystal plane and the interplanar spacing is 0.254 nm. It has a bamboo-like shape with a resemblance to alloy balls on the ends, and its surface is coated with SiO2. The improved carbon-coated porous BN/Si3N4 joint strength is possibly ascribed to the bridging of nanowires in the joint.

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Kononina A. V., Balakshin Yu. V., Gonchar K.A., Bozhev I.V., Shemukhin A.A., and Chernysh V.S. "Amorphization of silicon nanowires upon irradiation with argon ions." Technical Physics Letters 48, no. 1 (2022): 53. http://dx.doi.org/10.21883/tpl.2022.01.52470.18989.

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The irradiation of silicon nanowires with Ar+ ions with the energy of 250 keV and fluences of 1013 to 1016 cm-2 was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films. Keywords: silicon nanowires, Raman spectroscopy, defect formation.

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Dissertations / Theses on the topic "Porous Silicon Nanowires"

1

Manoharan, Gowtham. "Confined growth of carbon nanotubes and silicon nanowires in lateral porous alumina templates." Phd thesis, Ecole Polytechnique X, 2009. http://pastel.archives-ouvertes.fr/pastel-00005283.

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Ming, Tingsen [Verfasser], Benjamin [Gutachter] Dietzek, and Sanjay [Gutachter] Mathur. "Porous silicon nanowires for hydrogen generation : mechanism and photocatalytic studies / Tingsen Ming ; Gutachter: Benjamin Dietzek, Sanjay Mathur." Jena : Friedrich-Schiller-Universität Jena, 2020. http://d-nb.info/1207320161/34.

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Lefeuvre, Emmanuel. "Organized growth of semiconducting one-dimensional nanostructures in vertical porus templates for the fabrication of field effect transistors." Palaiseau, Ecole polytechnique, 2012. https://pastel.archives-ouvertes.fr/pastel-01063869.

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Chiappini, Dottore Ciro. "Porous silicon nanoneedles for intracellular delivery of small interfering RNA." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-2671.

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The rational and directed delivery of genetic material to the cell is a formidable tool to investigate the phenotypic effects of gene expression regulation and a promising therapeutic strategy for genetic defects. RNA interference constitutes a versatile approach to gene silencing. Despite the development of numerous strategies the transfection of small interfering RNA (siRNA) is highly dependent on cell type and conditions. Direct physical access to the intracellular compartment is a promising path for high efficiency delivery independently of cell type and conditions. Silicon nanowires grant such access with minimal toxic effects, and allow intracellular delivery of DNA when actuated by atomic force microscope. These findings reveal the potential for porous silicon nanostructures to serve as delivery vectors for nucleic acids due to their porous nature, elevated biocompatibility, and biodegradability. This dissertation illustrates the development a novel platform for efficient siRNA transfection based on an array of porous silicon nanoneedles. The synthesis of biodegradable and biocompatible porous nanowires was accomplished by a novel strategy for electroless etch of silicon that allows anisotropic etch simultaneously with porosification. An ordered array of cone shaped porous silicon nanoneedles with tunable tip size, array density and aspect ratio was obtained coupling this strategy with patterned metal deposition and selective reactive ion etch. This process also granted control over porosity, nanopore size and flexural modulus. The combination of these parameters was appropriately optimized to ensure cell penetration, maximize siRNA loading and minimize cytotoxic effects. Loading of the negatively charged siRNA molecules was optimized by applying an external electric field to the nanoneedles under appropriate voltage conditions to obtain a tenfold increase over open circuit loading, and efficient penetration of the siRNA within the porous volume of the needles. Alternative surface chemistry modification provided a means for effective siRNA loading and sustained release. siRNA transfection was achieved by either imprinting the nanoneedles array chip over a culture of MDA-MB-231 cells or allowing the cells to self-impale over the needles. The procedures allowed the needles to penetrate across the cell membrane without influencing cell proliferation. siRNA was successfully transfected and was effective at suppressing gene expression.
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Cheng, Ching-Sheng, and 鄭景升. "The characteristics of ZnO nanowires grown on porous silicon by Vapor-Liquid-Soild method." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/19513360703475641949.

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碩士
國立交通大學
光電工程所
91
We have successfully fabricated the ZnO nanowires under the optimum conditions on porous silicon (PS) substrates by vapor-liquid-solid method using chemical vapor transport and condensation system (CVTC). All the nanowires grown on PS showed a better uniformity in dimension and a high orientation in direction (002) than on silicon substrate from SEM images. From selected area electron diffraction(SAED) pattern and low temperature photoluminescence (LT-PL) measurement, ZnO nanowires showed a single crystalline structure and to have a good optical quality. At low temperature photoluminescence (LT-PL), the free and donor-bound exciton lines dominate the spectra, while with increasing temperature emission from free exciton grow rapidly and finally become the dominant line.

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Yeh, Yu-Chun, and 葉禹君. "The characteristics of ZnO nanowires grown on porous silicon by Vapor-Liquid-Soild method." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/45347x.

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碩士
國立清華大學
應用科學系所
105
In this study, the porous silicon were prepared by metal-assisted chemical etching method, and the effect of different gold coating time and etching time on the distribution of porous pores was discussed. Since gold is a catalyst for metal-assisted chemical etching, the area with gold coating will preferentially etched. In this way, the best distribution of the topography was chose for 35 seconds as the best parameter for etching. As well as the chemical vapor deposition method to grow zinc oxide nanostructures in porous silicon, therefore, the growth of zinc oxide depends on the location of porous silicon holes distribution. The etching time 3 and 5 minutes, the holes morphology is uniform. The etching time is chose here for 3 and 5 of minutes as the optimum parameter for growing zinc oxide. when the zinc oxide's growth time was 30 minutes of etching time of 3 minutes the distribution of zinc oxide nanowires the most uniform distribution, and zinc oxide nanowires average length of about 10um.The X-ray measurement showed that the zinc oxide nanowires were grown for 30 minutes in the pores having 3 minutes etching time grow in the crystal plane direction of (100), (101),(103),(110) and (002), and the crystal phase is ZnO(002) highly-preferred orientation. In the photoluminescence spectrum (PL), the zinc oxide nanowires emit light at the near-energy band gap, which is the essential luminescence of zinc oxide, and there is no light in the visible region, which means that there is no defect of zinc oxide. The Porous silicon with a etching time of 3 minutes and growth time of zinc oxide is 30 minutes had a field emission result. The available applied field size is 30 V / um, the turn-on field is 24 V / um, the maximum current density is 9x10-6 mA/cm2, and the field emission enhancement factor β is 884. In addition, the experiment can be found 99% of the zinc powder grow out of zinc oxide mostly were nanometer flower structures, , and zinc powder of 99.999% the nanowire structures were the distribution uniform. Therefore, that the purity of zinc powder will affect the morphology of zinc oxide nanostructures. Key words: zinc oxide, nanowires, porous silicon, metal-assisted chemical etching, chemical vapor deposition, field characteristics.

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Book chapters on the topic "Porous Silicon Nanowires"

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Ge, Mingyuan. "Porous Silicon Nanowires." In Handbook of Porous Silicon, 1–12. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-04508-5_113-1.

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Ge, Mingyuan. "Porous Silicon Nanowires." In Handbook of Porous Silicon, 203–14. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_113.

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Rezvani, Seyed Javad, Yimin Mijiti, Federico Galdenzi, Luca Boarino, Roberto Gunnella, Augusto Marcelli, Nicola Pinto, and Andrea Di Cicco. "Structural Properties of Porous Silicon Nanowires: A Combined Characterization by Advanced Spectroscopic Techniques." In Synchrotron Radiation Science and Applications, 191–201. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-72005-6_15.

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Chen, Fei, Feiyu Li, Kaiyu Wang, Qiang Shen, and Lianmeng Zhang. "Preparation of Zirconium Phosphate Bonded Silicon Nitride Porous Ceramics Reinforced by In-Situ Reacted Silicon Nitride Nanowires." In Ceramic Transactions Series, 15–24. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118889770.ch2.

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"Porous Silicon Nanowires." In Silicon and Silicide Nanowires, 407–30. Jenny Stanford Publishing, 2016. http://dx.doi.org/10.1201/b15967-11.

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Yao, Baodian, and Ning Wang. "Structure characterization of mesostructured Silica nanowires formed in Porous Alumina membranes." In Recent Progress in Mesostructured Materials - Proceedings of the 5th International Mesostructured Materials Symposium (IMMS2006), Shanghai, P.R. China, August 5-7, 2006, 105–8. Elsevier, 2007. http://dx.doi.org/10.1016/s0167-2991(07)80276-x.

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Conference papers on the topic "Porous Silicon Nanowires"

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Antidormi, Aleandro, Diego Chiabrando, Maria Grazia Graziano, Luca Boarino, and Gianluca Piccinini. "Methodology modeling of MaE-fabricated Porous Silicon Nanowires." In 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). IEEE, 2014. http://dx.doi.org/10.1109/prime.2014.6872732.

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Abdulgafour, H. I., Z. Hassan, F. K. Yam, M. J. Jawad, Abdul Manaf Hashim, and Vijay K. Arora. "Growth of ZnO Nanowires Without Catalyst on Porous Silicon." In ENABLING SCIENCE AND NANOTECHNOLOGY: 2010 International Conference On Enabling Science And Nanotechnology Escinano2010. AIP, 2011. http://dx.doi.org/10.1063/1.3586945.

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Abdulgafour, H. I., Z. Hassan, F. K. Yam, M. J. Jawad, and N. K. Ali. "Growth of ZnO nanowires without catalyst on porous silicon." In 2010 International Conference on Enabling Science and Nanotechnology (ESciNano). IEEE, 2010. http://dx.doi.org/10.1109/escinano.2010.5700994.

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Najar, Adel, Ahmad Ali Al-Jabr, Ahmed Ben Slimane, M. A. Alsunaidi, Tien Khee Ng, Boon S. Ooi, Rachid Sougrat, and Dalaver H. Anjum. "Effective antireflection properties of porous silicon nanowires for photovoltaic applications." In 2013 18th International Conference on Digital Signal Processing (DSP). IEEE, 2013. http://dx.doi.org/10.1109/siecpc.2013.6550769.

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Hsu, W. I., S. J. Wang, W. C. Tsai, W. C. Hsu, F. S. Tsai, and H. Y. Huang. "Enhanced Visible Light and Electron Field Emission of Porous Silicon Nanowires." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.p-13-4.

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Gouda, Abdelaziz M., Nageh K. Allam, and Mohamed A. Swillam. "Facile omnidirectional black silicon based on porous and nonporous silicon nanowires for energy applications." In 2016 Photonics North (PN). IEEE, 2016. http://dx.doi.org/10.1109/pn.2016.7537973.

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Aksenov, V. P., and G. N. Mikhailova. "Photophysical ablation of porous silicon as manifestation of mezoscopic force fluctuation in nanowires." In Rome and Frascati, Italy, edited by Ivan A. Shcherbakov, Anna Giardini, Vitali I. Konov, and Vladimir I. Pustovoy. SPIE, 2005. http://dx.doi.org/10.1117/12.633673.

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Kim, K. H., E. Lefeuvre, A. Gohier, M. Chatelet, D. Pribat, B. S. Kim, and C. S. Cojocaru. "The organization of carbon nanotube and silicon nanowires using lateral-type porous anodic alumina." In SPIE NanoScience + Engineering, edited by Didier Pribat, Young-Hee Lee, and Manijeh Razeghi. SPIE, 2010. http://dx.doi.org/10.1117/12.863114.

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Ma, Shuangyun, Ming Hu, Mingda Li, Jiran Liang, and Changqing Li. "Synthesis of tungsten oxide nanowires/porous silicon composite and its sensing properties for NO2." In 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2013. http://dx.doi.org/10.1109/nano.2013.6720924.

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Xia, Yiqiu, and Si-Yang Zheng. "A mcirofluidic device of biodegradable porous silicon nanowires for size based capturing and releasing viruses." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7180956.

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