Relevant bibliographies by topics / Porous silicon

Academic literature on the topic 'Porous silicon'

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Published: 4 June 2021
Last updated: 31 July 2024

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Journal articles on the topic "Porous silicon"

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Syari’ati, Ali, and Veinardi Suendo. "Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon." Materials Science Forum 737 (January 2013): 60–66. http://dx.doi.org/10.4028/www.scientific.net/msf.737.60.

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Porous silicon (p-Si) is a well-known silicon based material that can emit visible light at room temperature. The radiative recombination that originated from quantum confinement effect shows photoluminescence (PL) in red, while the defect on silicon oxide at the surface of p-Si shows in blue-green region. Porous silicon can be synthesized through two methods; wet-etching and electrochemical anodization using hydrofluoric acid as the main electrolyte. The electrochemical anodization is more favorable due to faster etching rate at the surface than the conventional wet-etching method. The objective of this research is to show that both of porous silicons can be synthesized using the same main electrolyte but by varying the reaction environment during anodization/etching process. Here, we shows the wet-etching method that enhanced by polarization concentration will produce porous silicon with silicon oxide defects by means blue-green emission, while direct electrochemical anodization will produce samples that emit red PL signal. The effect of introducing KOH into the electrolyte was also studied in the case of enhanced-wet-etching method. Surface morphology of porous silicon and their photoluminescence were observed by Scanning Electron Microscope and PL spectroscopy, respectively.
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KOSHIDA, Nobuyoshi, Hideki KOYAMA, and Yoshiyuki SUDA. "Porous Silicon." Hyomen Kagaku 14, no. 2 (1993): 85–89. http://dx.doi.org/10.1380/jsssj.14.85.

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Hamilton, B. "Porous silicon." Semiconductor Science and Technology 10, no. 9 (September 1, 1995): 1187–207. http://dx.doi.org/10.1088/0268-1242/10/9/001.

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Olenych, I. B. "Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates." Semiconductor Physics Quantum Electronics and Optoelectronics 15, no. 4 (December 12, 2012): 382–85. http://dx.doi.org/10.15407/spqeo15.04.382.

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Olenych, I. B., L. S. Monastyrskyi, and B. P. Koman. "Electrical Properties of Silicon-Oxide Heterostructures on the Basis of Porous Silicon." Ukrainian Journal of Physics 62, no. 2 (February 2017): 166–71. http://dx.doi.org/10.15407/ujpe62.02.0166.

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Kim, K. B., A. S. Lenshin, F. M. Chyragov, and S. I. Niftaliev. "FORMATION OF NANOSTRUCTURED TIN OXIDE FILM ON POROUS SILICON." Azerbaijan Chemical Journal, no. 3 (September 19, 2023): 83–89. http://dx.doi.org/10.32737/0005-2531-2023-3-83-89.

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Porous silicon is actively used in the fabrication of sensors and detectors because of its large specific surface area, which is an important characteristic for gas adsorption. To improve the operating parameters of the sensors and increase the stability of operation, a film of tin oxide was deposited on the substrate of porous silicon by vacuum-thermal evaporation. The choice of tin is due to its wide forbidden zone, low cost, and high sensitivity. Porous silicon was obtained by the electrochemical anodization of single-crystalline silicon KEF (100). The data on morphology, composition and optical properties of the initial sample of porous silicon and the sample with deposited tin have been obtained by scanning electron microscopy, infrared and photoluminescence spectroscopy. It was found that the chemical tin deposition on porous silicon leads to the formation of composite structure, which significantly prevents further oxidation of the porous layer during storage, and to the shift of the luminescence band maximum
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Suhail, Abdulla M. "Carbon nanotubes -porous silicon high sensitivity infrared detector." International Journal of Scientific Research 2, no. 1 (June 1, 2012): 209–10. http://dx.doi.org/10.15373/22778179/jan2013/74.

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Lavallard, P., and R. A. Suris. "Silicon needles in porous silicon." Thin Solid Films 276, no. 1-2 (April 1996): 293–95. http://dx.doi.org/10.1016/0040-6090(95)08100-3.

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Pavesi, L., R. Chierchia, P. Bellutti, A. Lui, F. Fuso, M. Labardi, L. Pardi, et al. "Light emitting porous silicon diode based on a silicon/porous silicon heterojunction." Journal of Applied Physics 86, no. 11 (December 1999): 6474–82. http://dx.doi.org/10.1063/1.371711.

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Karlash, A. Yu. "Impedance spectroscopy of composites based on porous silicon and silica aerogel for sensor applications." Functional Materials 20, no. 1 (March 25, 2013): 68–74. http://dx.doi.org/10.15407/fm20.01.068.

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Dissertations / Theses on the topic "Porous silicon"

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Karlsson, Linda. "Biomolecular interactions with porous silicon /." Linköping : Univ, 2003. http://www.bibl.liu.se/liupubl/disp/disp2003/tek804s.pdf.

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Wielgosz, R. I. "Electrochemical studies of porous silicon." Thesis, University of Bath, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296302.

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Boswell, Emily. "Field emission from porous silicon." Thesis, University of Oxford, 1997. http://ora.ox.ac.uk/objects/uuid:a4344196-7fc2-4713-b47b-85920b137759.

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Vacuum microelectronic (VME) devices are of interest for the development of flat-screen displays and microwave devices. In many cases, their operation depends on the field emission of electrons from micron-sized cathodes (semiconductor or metal), into a vacuum. Major challenges to be met before these devices can be fully exploited include obtaining - low operating voltages, high maximum emission currents, uniform emission characteristics, and long-term emission stability. The research in this thesis concerns the production of silicon field emitters and the improvement of their emission properties by the process of anodisation. Anodisation was carried out for short times, in order to form a very thin layer of porous silicon (PS) at the surface of both p and p+-type silicon emitters. The aim in doing this was to form a high density of asperities over the surface of the emitters. It was the intention that these asperities, rather than the "macroscopic" apex of the emitter, would control emission. This was the first work of its kind to be carried out. Transmission electron microscopy was used to characterise the morphology of p and p+-type silicon emitters before and after anodisation. Both the structure and arrangement of the surface fibrils, the thickness of the PS layers at the apex and nature of PS cross-sections were studied. The morphology was correlated to subsequent field emission measurements. Field emission characteristics, before and after anodisation, were obtained using a scanning electron microscope adapted for field emission measurements, and a field emission microscope. Extensive measurements showed that, following anodisation, there was substantial improvement in emission behaviour. After anodisation, the following was found to be true: i) The starting voltage was reduced by up to 50% (with p+
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Koker, Lynne. "Photoelectrochemical formation of porous silicon." Thesis, University of Birmingham, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368290.

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Zheng, Wan Hua. "Photoluminescence study of porous silicon." HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/138.

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Ngan, Mei Lun. "Photoluminescence excitation of porous silicon." HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/139.

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DEMONTIS, VALERIA. "Porous Silicon applications in biotechnology." Doctoral thesis, Università degli Studi di Cagliari, 2007. http://hdl.handle.net/11584/266040.

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Biotechnology is a field in great expansion and the continuous boost for obtaining smaller and more efficient devices stimulates the increase of interest from the research community. Nanostructured materials, and among them porous silicon (PS), appear to be good candidates for coupling with biological molecules because of their peculiar characteristics. In the case of porous silicon, the most noticeable are the very large specific area, which allows the loading of large amounts of biological material in a very small volume, and the possibility to easily tailor the pore size and morphology as function of the kind of molecules to be introduced. Besides, the proven biocompatibility and non toxicity of PS allow the development of electronic devices to be directly implanted into living organisms without risk of rejection. In this thesis we mainly focus our attention on the fabrication and characterization of a porous silicon-based potentiometric biosensor for triglycerides analysis, made of a lipase immobilized on a mesoporous Si matrix. Prototypes, realized on 1 x 1 cm n+-type silicon wafers, show a very high enzymatic activity. Moreover the properties of these biosensors have been shown to be stable in a several months time interval, clearly showing their advantages with respect to traditional triglycerides detection systems. The Michaelis Menten curve is obtained to demonstrate the absence of diffusion problems. Potentiometric measurements are also shown.
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Mabrook, Mohammed Fadhil. "Fabrication and characterisation of porous silicon." Thesis, Sheffield Hallam University, 2000. http://shura.shu.ac.uk/19990/.

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A systematic study has been made of the electrical conduction processes through electrically etched porous silicon (PS) films sandwiched between two metal electrodes. The PS layers were formed by anodisation of p-type silicon wafers in a hydrofluoric (HF) acid solution. The effect of fabrication conditions on the structural and electrical properties of PS have been investigated. The thickness of PS layers was found to depend on the anodisation time, whereas porosity was regarded to be controlled by the current density and HF acid concentration. The dark current-voltage I(V) characteristics at fixed temperature and the variation of current as a function of temperature have been established. The characteristics for all devices, regardless the metal contact, show a rectifying behaviour with ideality factor close to unity. It was found that PS films fabricated from p-type silicon substrates behave like n-type silicon due to the depletion of electronic holes. The results suggest that a pn heterojunction between PS and p-Si is responsible for the rectifying behaviour. A value of 0.7 eV was obtained for the barrier height at the interface between PS and p-Si at room temperature. The barrier height was found to increase with rising temperature. Recombination conduction process was found to be dominant at low temperatures as the activation energy did not exceed 0.22 eV. At high temperatures, thermionic emission diffusion process was found to be responsible for the current transport in the PS structures. A band model was proposed for metal/PS/p-Si/metal structures in order to explain the observed characteristics. A.c. dark current measurements revealed that the a.c. conductivity varies as ws where w is the angular frequency and s' is an index which depends on temperature and having a value less than unity. A.c. activation energy was interpreted in terms of hopping conduction at low temperatures (less than 200 K) and diffusion transport of charge carriers through PS layers at higher temperatures. Measurements of capacitance as a function of frequency and temperature showed a decrease with increasing frequency and increase with increasing temperature. The photoconduction behaviour of PS was characterised by high dark resistivity, a clear photosensitivity for visible light, and a bias voltage dependence of the spectral response.
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Squire, E. K. "Light emitting microstructures in porous silicon." Thesis, University of Bath, 1999. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285287.

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Gao, Wei. "Oxidation of nitride-bonded silicon carbide (NBSC) and hot rod silicon carbide with coatings." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366751.

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Books on the topic "Porous silicon"

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Chuan, Feng Zhe, and Tsu Raphael, eds. Porous silicon. Singapore: World Scientific, 1994.

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Stiebahl, Korinna Christine. Porous anodised silicon. Birmingham: University of Birmingham, 1991.

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T, Canham Leigh, and INSPEC (Information service), eds. Properties of porous silicon. London: INSPEC, 1997.

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T, Canham Leigh, and INSPEC, eds. Properties of porous silicon. London: INSPEC, 1987.

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Canham, Leigh, ed. Handbook of Porous Silicon. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-04508-5.

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Sailor, Michael J. Porous Silicon in Practice. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527641901.

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Santos, Hélder A. Porous silicon for biomedical applications. Amsterdam: Elsevier/WP Woodhead Publishing, Woodhead Publishing is an imprint of Elsevier, 2014.

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Gardelis, S. Light emission from porous silicon. Manchester: UMIST, 1993.

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Vial, Jean-Claude, and Jacques Derrien, eds. Porous Silicon Science and Technology. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9.

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Koker, Lynne. Photoelectrochemical formation of porous silicon. Birmingham: University of Birmingham, 2001.

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Book chapters on the topic "Porous silicon"

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Bettotti, Paolo. "Porous Silicon." In Springer Handbook of Nanomaterials, 883–902. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-20595-8_24.

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Ossicini, Stefano, Lorenzo Pavesi, and Francesco Priolo. "Porous Silicon." In Springer Tracts in Modern Physics, 75–122. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-44877-8_3.

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Shearer, Cameron. "Porous Silicon." In Encyclopedia of Membranes, 1–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-40872-4_1391-3.

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Korotcenkov, Ghenadii. "Porous Silicon." In Handbook of Humidity Measurement, 109–37. Boca Raton : CRC Press, Taylor & Francis Group, 2018-[2020]: CRC Press, 2020. http://dx.doi.org/10.1201/9781351056502-7.

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Canham, Leigh. "Porous Silicon Formation by Porous Silica Reduction." In Handbook of Porous Silicon, 1–8. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04508-5_8-1.

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Canham, Leigh. "Porous Silicon Formation by Porous Silica Reduction." In Handbook of Porous Silicon, 1–12. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-04508-5_8-2.

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Canham, Leigh. "Porous Silicon Formation by Porous Silica Reduction." In Handbook of Porous Silicon, 85–92. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05744-6_8.

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Canham, Leigh. "Porous Silicon Formation by Porous Silica Reduction." In Handbook of Porous Silicon, 99–109. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_8.

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Ayvazyan, Gagik. "Crystalline and Porous Silicon." In Black Silicon, 1–49. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-48687-6_1.

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Sailor, Michael J. "Porous Silicon Nanoparticles." In Handbook of Porous Silicon, 1–11. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-04508-5_103-1.

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Conference papers on the topic "Porous silicon"

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Canham, L. "Porous silicon." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cwk2.

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Tsuo, Y. S., P. Menna, J. R. Pitts, K. R. Jantzen, S. E. Asher, M. M. Al-Jassim, and T. F. Ciszek. "Porous silicon gettering." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564043.

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Lee, Ming K., K. R. Peng, and C. H. Chu. "Porous silicon photodetector." In Measurement Technology and Intelligent Instruments, edited by Li Zhu. SPIE, 1993. http://dx.doi.org/10.1117/12.156352.

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Martínez-Duart, José M., Ricardo Guerrero-Lemus, and José D. Moreno. "Luminescent porous silicon." In The 8th Latin American congress on surface science: Surfaces , vacuum, and their applications. AIP, 1996. http://dx.doi.org/10.1063/1.51108.

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Wang, Weibiao, Changchun Jin, Jinxiu Jiang, Haifeng Zhao, and Xiwu Fan. "Polycrystalline silicon porous silicon field emitter." In Photonics China '98, edited by Shou-Qian Ding and Bao Gang Wu. SPIE, 1998. http://dx.doi.org/10.1117/12.319664.

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Yao, Shuhuai, Alan M. Myers, Jonathan D. Posner, and Juan G. Santiago. "Electroosmotic Pumps Fabricated From Porous Silicon Membranes." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61350.

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Large flow rates per applied potential are obtained from electroosmotic (EO) pumps fabricated from n-type porous silicon. Porous silicon membranes have ideal geometries for EO pumping. These membranes have hexagonally packed, uniform pores with near-unity tortuosity and are well suited to maximize flow rate for a given applied voltage. The 350 μm thick membranes were passivated with a SiO2 layer and exhibit a maximum flow rate of 1.2 ml/min/cm2/V. This is 4.4 times higher than previously demonstrated silica-based frit EO pumps. LPCVD polysilicon deposition followed by wet oxidation was used to control the pore size. The impact of these coatings on the pump performance has also been characterized.
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Weiss, Sharon. "Porous Silicon Waveguide Biosensors." In 2006 IEEE LEOS Annual Meeting. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.279090.

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Balucani, M., K. Kholostov, V. Varlamava, F. Palma, M. Izzi, L. Serenelli, and M. Tucci. "Porous silicon solar cells." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388710.

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Micard, Gabriel, Yves Patrick Botchak Mouafi, and Barbara Terheiden. "Non-destructive spatially resolved characterization of porous silicon layer stacks." In SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0141239.

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El Moutaouakil, Amine, Mahmoud Al Ahmad, Abdul Kareem K. Soopy, and Adel Najar. "Porous Silicon NWs with FiTC-doped Silica Nanoparticles." In 2021 6th International Conference on Renewable Energy: Generation and Applications (ICREGA). IEEE, 2021. http://dx.doi.org/10.1109/icrega50506.2021.9388287.

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Reports on the topic "Porous silicon"

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Penczek, John, and Rosemary L. Smith. Electroluminescing Porous Silicon Device. Fort Belvoir, VA: Defense Technical Information Center, August 1995. http://dx.doi.org/10.21236/ada299433.

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Levine, Louis B., Matthew H. Ervin, and Wayne A. Churaman. Energy Harvesting from Energetic Porous Silicon. Fort Belvoir, VA: Defense Technical Information Center, July 2016. http://dx.doi.org/10.21236/ad1011610.

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Aurora, Peter. Commercially Scalable Process to Fabricate Porous Silicon. Office of Scientific and Technical Information (OSTI), September 2017. http://dx.doi.org/10.2172/1395497.

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Anderson, R., R. Muller, and C. Tobias. Investigation of porous silicon for vapor sensing. Office of Scientific and Technical Information (OSTI), October 1989. http://dx.doi.org/10.2172/5234679.

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Solanki, R. Lighting research - porous silicon phosphors. Final technical report. Office of Scientific and Technical Information (OSTI), July 1995. http://dx.doi.org/10.2172/83842.

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Syyuan Shieh. The processing and potential applications of porous silicon. Office of Scientific and Technical Information (OSTI), July 1992. http://dx.doi.org/10.2172/7253171.

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Shieh, Syyuan. The processing and potential applications of porous silicon. Office of Scientific and Technical Information (OSTI), July 1992. http://dx.doi.org/10.2172/10180756.

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Becker, Collin, Luke Currano, and Wayne Churaman. Characterization and Improvements to Porous Silicon Processing for Nanoenergetics. Fort Belvoir, VA: Defense Technical Information Center, February 2009. http://dx.doi.org/10.21236/ada494952.

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Tallant, D. R., M. J. Kelly, T. R. Guilinger, and R. L. Simpson. Porous silicon structural evolution from in-situ luminescence and Raman measurements. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/231693.

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Gupta, P., A. C. Dillon, A. S. Bracker, and S. M. George. FTIR Studies of H2O and D2O Decomposition on Porous Silicon Surfaces. Fort Belvoir, VA: Defense Technical Information Center, July 1990. http://dx.doi.org/10.21236/ada226581.

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