Relevant bibliographies by topics / Polarization photodetectors / Journal articles

Journal articles on the topic 'Polarization photodetectors'

To see the other types of publications on this topic, follow the link: Polarization photodetectors.
Author: Grafiati
Published: 8 June 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Polarization photodetectors.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Grahn, Holger T. "Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors." MRS Bulletin 34, no. 5 (May 2009): 341–47. http://dx.doi.org/10.1557/mrs2009.97.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractThis article reviews the optical polarization properties of unstrained and strained GaN films with a nonpolar orientation. In unstrained a -plane GaN films, the A exciton becomes completely linearly polarized perpendicular to the c-axis, whereas the B and C excitons are only partially polarized. In m -plane or a -plane GaN films under anisotropic in-plane compressive strain, all three interband transitions between the three uppermost valence bands and the conduction band can become linearly polarized for sufficiently large strain values. The complete linear polarization can be directly observed in reflection, transmission, or photoreflectance by a polarization-dependent energy gap. This complete linear polarization can be used to realize polarization-sensitive photodetectors in the ultraviolet spectral range, which do not need a polarization filter in front of the photodetector. By combining a polarization filter and photodetector or two photodetectors from the same material with their c-axes oriented perpendicular to each other, a narrowband photodetection configuration can be achieved in the ultraviolet spectral range with a band width below 8 nm. Since both realizations are also polarization sensitive, a configuration with four photodetectors is necessary to achieve narrow-band sensitivity regardless of the polarization state of the incident light. At the same time, the configuration with four photodetectors allows for the determination of the absolute angle of polarization.
2

Das, K., S. Mukherjee, S. Manna, S. K. Ray, and A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity." Nanoscale 6, no. 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>104 A W−1) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.
3

Hou, Yaonan, Menno Kappers, Chaoyuan Jin, and Rachel Oliver. "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN." Applied Physics Letters 120, no. 20 (May 16, 2022): 202101. http://dx.doi.org/10.1063/5.0094454.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
We report a GaN based metal–semiconductor–metal (MSM) infrared photodetector enabled with azimuthally distributed sub-wavelength gratings fabricated on one of the working electrodes. Under illumination, hot electron transfer is introduced by the plasmonic resonance in the infrared waveband formed at the interface of Au/GaN. Without the help of using any external optical polarizers, the device is able to detect radial polarization vortices in the form of photocurrents with a prescribed response spectrum. The detector exhibits a 10%–90% rise and fall time of 0.9 ms under modulated light, much faster than that of conventional ultraviolet GaN MSM photodetectors based on the band edge absorption. This work provides a viable way to measure spatially variant polarization beams with a compact plasmonic photodetectors fabricated from wide bandgap semiconductors.
4

Li, Jinzhao, Junyu Li, Shudao Zhou, and Fei Yi. "Metasurface Photodetectors." Micromachines 12, no. 12 (December 20, 2021): 1584. http://dx.doi.org/10.3390/mi12121584.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Photodetectors are the essential building blocks of a wide range of optical systems. Typical photodetectors only convert the intensity of light electrical output signals, leaving other electromagnetic parameters, such as the frequencies, phases, and polarization states unresolved. Metasurfaces are arrays of subwavelength structures that can manipulate the amplitude, phase, frequency, and polarization state of light. When combined with photodetectors, metasurfaces can enhance the light-matter interaction at the pixel level and also enable the detector pixels to resolve more electromagnetic parameters. In this paper, we review recent research efforts in merging metasurfaces with photodetectors towards improved detection performances and advanced detection schemes. The impacts of merging metasurfaces with photodetectors, on the architecture of optical systems, and potential applications are also discussed.
5

Zheng, Dingshan, Hailu Wang, Ruoling Chen, Long Li, Jiaxiang Guo, Yue Gu, Muhammad M. Zubair, et al. "High-detectivity tin disulfide nanowire photodetectors with manipulation of localized ferroelectric polarization field." Nanophotonics 10, no. 18 (November 3, 2021): 4637–44. http://dx.doi.org/10.1515/nanoph-2021-0480.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS2 NWs and then fabricated SnS2 NW photodetectors with a ferroelectric polymer side-gate. The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS2 NW photodetectors. The photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 105 and a high responsivity of 2.1 × 105 A W−1. Compared with devices without polarization depletion, the detectivity of polarization-depleted photodetectors is improved by at least two orders of magnitude, and the highest detectivity is 1.3 × 1016 Jones. Further, the rise and fall time are 56 and 91 ms respectively, which are about tens of times faster than those without polarization depletion. The device also shows a good spectral response from ultraviolet to near-infrared. This study demonstrates that ferroelectric materials can enhance optoelectronic properties of low-dimensional semiconductors for high-performance photodetectors.
6

Wang, Xingang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, and Zhongming Wei. "Polarization sensitive photodetector based on quasi-1D ZrSe3." Journal of Semiconductors 43, no. 10 (October 1, 2022): 102001. http://dx.doi.org/10.1088/1674-4926/43/10/102001.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract The in-plane anisotropy of transition metal trichalcogenides (MX3) has a significant impact on the molding of materials and MX3 is a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional (1D) semiconductors, ZrSe3, are systematically investigated through experiments and theoretical studies. The ZrSe3-based photodetector shows impressive wide spectral response from ultraviolet (UV) to near infrared (NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W-1 and detectivity of ~106 at 532 nm. Moreover, the dichroic ratio of ZrSe3-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSe3 has potential in optoelectronic applications and polarization detectors.
7

Jestl, M., A. Köck, W. Beinstingl, and E. Gornik. "Polarization- and wavelength-selective photodetectors." Journal of the Optical Society of America A 5, no. 9 (September 1, 1988): 1581. http://dx.doi.org/10.1364/josaa.5.001581.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Hainey, Mel F., Takaaki Mano, Takeshi Kasaya, Tetsuyuki Ochiai, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto, et al. "Systematic studies for improving device performance of quantum well infrared stripe photodetectors." Nanophotonics 9, no. 10 (July 4, 2020): 3373–84. http://dx.doi.org/10.1515/nanoph-2020-0095.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractThe integration of quantum well infrared photodetectors with plasmonic cavities has allowed for demonstration of sensitive photodetectors in the mid-infrared up to room-temperature operating conditions. However, clear guidelines for optimizing device structure for these detectors have not been developed. Using simple stripe cavity detectors as a model system, we clarify the fundamental factors that improve photodetector performance. By etching semiconductor material between the stripes, the cavity resonance wavelength was expected to blue-shift, and the electric field was predicted to strongly increase, resulting in higher responsivity than unetched stripe detectors. Contrary to our predictions, etched stripe detectors showed lower responsivities, indicating surface effects at the sidewalls and reduced absorption. Nevertheless, etching led to higher detectivity due to significantly reduced detector dark current. These results suggest that etched structures are the superior photodetector design, and that appropriate sidewall surface treatments could further improve device performance. Finally, through polarization and incidence angle dependence measurements of the stripe detectors, we clarify how the design of previously demonstrated wired patch antennas led to improved device performance. These results are widely applicable for cavity designs over a broad range of wavelengths within the infrared, and can serve as a roadmap for improving next-generation infrared photodetectors.
9

Gao, Xing, Xin Song, Shan Zhang, Xinxiang Yang, Pei Han, Liwen Zhang, Chunxiao Lu, Xihong Hao, and Yong Li. "A Self-Powered Broadband Photodetector with High Photocurrent Based on Ferroelectric Thin Film Using Energy Band Structure Design." Crystals 14, no. 1 (January 13, 2024): 79. http://dx.doi.org/10.3390/cryst14010079.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Self-powered photodetectors have the advantages of high sensitivity, sustainability, and small size and have become a research hotspot in advanced optoelectronic systems. However, the low output photocurrent density seriously hinders the practical application of ferroelectric self-powered photodetectors. Herein, the high-efficiency photoelectric detection performance of the Bi1-xHoxFeO3 ferroelectric self-powered photodetector is realized by doping Ho. The responsivity (R) and detectivity (D*) can reach 0.0159 A/W and 1.94 × 1011 Jones under monochromatic light with a wavelength of 900 nm. Meanwhile, the R and D* can reach 0.022 A/W and 2.65 × 1011 Jones under sunlight. These excellent photodetection performances are attributed to the high short-circuit current density (Jsc). When the Ho content is 6%, the output photocurrent reaches up to 0.81 mA/cm2. The systematic structure and photo-electric characteristic analysis suggest that the decrease in the band gap leads to the generation of a larger photocurrent while the ferroelectric polarization is reduced slightly. This work provides a new way to obtain high-performance self-powered photodetectors.
10

Luo, Ming‐Cheng, Fang‐Fang Ren, Nikita Gagrani, Kai Qiu, Qianjin Wang, Le Yu, Jiandong Ye, et al. "Polarization‐Independent Indium Phosphide Nanowire Photodetectors." Advanced Optical Materials 8, no. 17 (June 8, 2020): 2000514. http://dx.doi.org/10.1002/adom.202000514.

Full text
APA, Harvard, Vancouver, ISO, and other styles
11

Ki, Yu Geun, Hyeon Woo Jeon, and Soo Jin Kim. "Design of Metasurface-Based Photodetector with High-Quality Factor." Electronics 13, no. 4 (February 13, 2024): 753. http://dx.doi.org/10.3390/electronics13040753.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
The ability of fine-tuning wavelengths in a high-Q resonance has been applied to various optical applications, particularly that of the development of nanoscaled, ultrathin photodetectors that realize next-generation optical sensors. However, designing a nanopatterned surface in a photodetector to induce intriguing optical effects inevitably deteriorates the electrical properties due to the increased roughness and defects, which cause the significant recombination of the photogenerated carriers. Moreover, light absorption in a semiconductor fundamentally decreases the Q factor of a resonance and ultimately limits the spectral sharpness. Thus, there is a trade-off between the applications of nano-optics for the fine control of wavelengths and the matured photodetector platform for electrical stability. In this work, we propose an alternative type of optical design for a photodetector by effectively decoupling the functionality of nano-optics for high-Q resonances and the electrical properties of semiconductors for the extraction of efficient photocarriers. By optimally balancing the loss of scattered radiation in a high-Q resonance and the loss of absorption in a semiconductor, we achieve a nano-optics-based photodetector with high-Q absorption and polarization sensing without a significant deterioration in the electrical properties. We believe that the suggested design rule can be effectively applied for the realization of emerging nanoscaled photodetectors for various applications of next-generation optical sensors.
12

Zhang, Fen, Zhangxun Mo, Danyang Wang, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, and Mianzeng Zhong. "Ultrasensitive and broad-spectrum polarization sensitive photodetector based on individual Bi2Te0.6S2.4 nanobelt." Applied Physics Letters 121, no. 19 (November 7, 2022): 191102. http://dx.doi.org/10.1063/5.0117128.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Polarimetric photodetectors with broadband and fast response have important applications in the military and civilian fields. Alloying of semiconductors is a good strategy to regulate its electronic band structure which broadens the photoresponse range of the corresponding optoelectronic devices. In this work, we designed and grew the high-quality Bi2Te0.6S2.4 alloy via controllable chemical vapor transport. The as-prepared Bi2Te0.6S2.4 nanobelts were designed to work as the active layer in photodetectors. The individual Bi2Te0.6S2.4 nanobelt based photodetector exhibits excellent photoresponse properties in a broadband range from solar-blind ultraviolet-C (254 nm) to near-infrared (1064 nm) with a good responsivity of 340 mA/W, a specific detectivity of 2.3 × 109 Jones, and extremely low dark current (1.1 pA). The photodetectors also exhibit a fast response speed of about 1 μs which comes from the direct transition of carriers in Bi2Te0.6S2.4 confirmed by the Ohmic contact between Bi2Te0.6S2.4 and electrodes. Furthermore, it is worth noting that the Bi2Te0.6S2.4 nanobelts have high polarization sensitivity in the broadband ranges from 266 to 1064 nm with the maximum dichroic ratio of 2.94 at 808 nm. Our results provide a simple Bi based semiconductor system for high performance multifunctional optoelectronics and electronics compared with conventional Bi based chalcogenides.
13

Tan, Dezhi, Wenjin Zhang, Xiaofan Wang, Sandhaya Koirala, Yuhei Miyauchi, and Kazunari Matsuda. "Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance." Nanoscale 9, no. 34 (2017): 12425–31. http://dx.doi.org/10.1039/c7nr03040a.

Full text
APA, Harvard, Vancouver, ISO, and other styles
14

Onat, B. M., and M. S. Unlu. "Polarization sensing with resonant cavity enhanced photodetectors." IEEE Journal of Selected Topics in Quantum Electronics 2, no. 1 (April 1996): 135–40. http://dx.doi.org/10.1109/2944.541883.

Full text
APA, Harvard, Vancouver, ISO, and other styles
15

Li, Lu, Long Jin, Yunxi Zhou, Junze Li, Jiaqi Ma, Shuai Wang, Wancai Li, and Dehui Li. "Filterless Polarization‐Sensitive 2D Perovskite Narrowband Photodetectors." Advanced Optical Materials 7, no. 23 (September 16, 2019): 1900988. http://dx.doi.org/10.1002/adom.201900988.

Full text
APA, Harvard, Vancouver, ISO, and other styles
16

Yan, Yong, Jie Li, Hengyi Li, Shasha Li, Zhongwei Li, Wei Gao, Yurong Jiang, Xiaohui Song, Congxin Xia, and Jingbo Li. "Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors." Applied Physics Letters 122, no. 4 (January 23, 2023): 043505. http://dx.doi.org/10.1063/5.0133326.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
The two-dimensional heterostructure is a promising research direction in photodetection. However, developing a good photodetector with high responsivity and fast speed is still challenging. Herein, we fabricate a high-performance self-powered broadband (355–1064 nm) photodetector based on a near-broken-gap GeSe/SnS2/InSe heterostructure, where SnS2 is used as a potential hole barrier layer. The device shows an ultrahigh open-circuit voltage (VOC) of 0.57 V, a high power-dependent responsivity of 1.87 A W−1 at 355 nm, and a fast response time of 8 μs in the self-powered mode. Based on the near-broken band alignment, the InSe layer with high electron mobility can efficiently collect the photogenerated electrons from the GeSe layer to improve conversion efficiency. Furthermore, the unipolar hole barrier at the interface can inhibit the Langevin recombination resulting in VOC enhancement. Notably, the anisotropy ratio of photocurrent in our device is also enhanced to ∼3.5, which is higher than GeSe photodetectors and other anisotropic devices counterparts. This work provides an opportunity for the realization of the high-sensitivity polarization-sensitive broadband photodetector.
17

Guskov, Andrey, Sergey Lavrov, and Rinat Galiev. "Polarization Sensitive Photodetectors Based on Two-Dimensional WSe2." Nanomaterials 12, no. 11 (May 29, 2022): 1854. http://dx.doi.org/10.3390/nano12111854.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
In this work we show the possibility of imparting polarization-sensitive properties to two-dimensional films of graphene-like semiconductors, using WSe2 as an example, by the application of ordered silver triangular nanoprisms. In addition, such nanoprisms made it possible to increase the optical sensitivity of optical detectors created on two-dimensional films by a factor of five due to surface plasmon resonance. The peculiarities of the surface plasmon resonance were shown by theoretical modeling, and the optimal conditions of its occurrence were determined. This article demonstrates an effective approach to creating spectrally selective, polarization-sensitive detectors based on two-dimensional graphene-like semiconductors.
18

Park, Hyunsung, and Kenneth B. Crozier. "Elliptical silicon nanowire photodetectors for polarization-resolved imaging." Optics Express 23, no. 6 (March 10, 2015): 7209. http://dx.doi.org/10.1364/oe.23.007209.

Full text
APA, Harvard, Vancouver, ISO, and other styles
19

Chen, C. J., K. K. Choi, L. Rokhinson, W. H. Chang, and D. C. Tsui. "Corrugated quantum well infrared photodetectors for polarization detection." Applied Physics Letters 74, no. 6 (February 8, 1999): 862–64. http://dx.doi.org/10.1063/1.123391.

Full text
APA, Harvard, Vancouver, ISO, and other styles
20

Antoni, Thomas, Alexandru Nedelcu, Xavier Marcadet, Hugues Facoetti, and Vincent Berger. "High contrast polarization sensitive quantum well infrared photodetectors." Applied Physics Letters 90, no. 20 (May 14, 2007): 201107. http://dx.doi.org/10.1063/1.2739408.

Full text
APA, Harvard, Vancouver, ISO, and other styles
21

Chai, Ruiqing, Yunfeng Chen, Mi Zhong, Huai Yang, Faguang Yan, Meng Peng, Yujia Sun, et al. "Non-layered ZnSb nanoplates for room temperature infrared polarized photodetectors." Journal of Materials Chemistry C 8, no. 19 (2020): 6388–95. http://dx.doi.org/10.1039/d0tc00755b.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Non-layered 2D ZnSb nanoplates are successfully synthesized to fabricate infrared polarized photodetectors, exhibiting, high responsivity, fast photoresponse speed, great stability, high anisotropic conductivity and linear polarization sensitivity.
22

Feng, Pu, Sixiang Zhao, Congcong Dang, Sixian He, Ming Li, Liancheng Zhao, and Liming Gao. "Improving the photoresponse performance of monolayer MoS2 photodetector via local flexoelectric effect." Nanotechnology 33, no. 25 (April 1, 2022): 255204. http://dx.doi.org/10.1088/1361-6528/ac5da1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract Strain engineering is an effective means of modulating the optical and electrical properties of two-dimensional materials. The flexoelectric effect caused by inhomogeneous strain exists in most dielectric materials, which breaks the limit of the materials’ non-centrosymmetric structure for piezoelectric effect. However, there is a lack of understanding of the impact on optoelectronic behaviour of monolayer MoS2 photodetector via local flexoelectric effect triggered by biaxial strain. In this paper, we develop a probe tip (Pt)-MoS2-Au asymmetric Schottky barrier photodetector based on conductive atomic force microscopy to investigate the impact of flexoelectric effect on the photoresponse performance. Consequently, when the probe force increases from 24 nN to 720 nN, the photocurrent, responsivity and detectivity increase 28.5 times, 29.6 times and 5.3 times at forward bias under 365 nm light illumination, respectively. These results indicate that local flexoelectric effect plays a critical role to improve the photoresponse performance of photodetector. Our approach suggests a new route to improve the performance of photodetectors by introducing local flexoelectric polarization field, offering the potential for the application of strain modulated photoelectric devices.
23

Li, Shuaishuai, Tao Wang, Xiaoshuang Chen, Wei Lu, Yiqun Xie, and Yibin Hu. "Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current." Nanoscale 10, no. 16 (2018): 7694–701. http://dx.doi.org/10.1039/c8nr00484f.

Full text
APA, Harvard, Vancouver, ISO, and other styles
24

Poduri, Shripriya, Mitra Dutta, and Michael Stroscio. "Photoluminescence Characterization of Cadmium Sulphide (CdS) Nanowires for Polarization Studies." Applied Physics Research 9, no. 6 (November 10, 2017): 26. http://dx.doi.org/10.5539/apr.v9n6p26.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
In this paper, the polarizing properties for CdS nanowire arrays were explored for their potential use in the design of nanowire based polarizers and optical switches. These free standing cadmium sulphide (CdS) nanowires were grown in anodized aluminum oxide (AAO) template via dc electrodeposition. Raman and photoluminescence (PL) measurements were investigated for parallel and perpendicular polarization with two orientations of the sample having light propagating parallel to the nanowire axis in one orientation and light propagating perpendicular to the nanowire axis in other orientation. Polarization-sensitive measurements show strong polarization anisotropy in the photoluminescence (PL) intensity measurements observed in parallel and perpendicular orientation to the long axis of a nanowire. The measured PL ratio, ρ, for parallel to perpendicular orientation was around 0.80- 0.85 which shows strong polarization anisotropy for the grown CdS nanowires. Strong peaks of A1 (TO) at 235 cm-1, E2 mode at 255 cm-1 along with 1 LO (longitudinal optical) at 303 cm-1, 2 LO peak at 604 cm-1 of the CdS nanowires were seen with different polarizations for Raman spectral studies. These polarization studies show that these dc electrodeposited grown CdS nanowire arrays are well suited for uses in polarization-based nanoscale devices such as in optical switches, and high performance photodetectors.
25

Al-Zuhairi, Omar, Ahmad Shuhaimi, Nafarizal Nayan, Adreen Azman, Anas Kamarudzaman, Omar Alobaidi, Mustafa Ghanim, Estabraq T. Abdullah, and Yong Zhu. "Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review." Coatings 12, no. 2 (February 18, 2022): 275. http://dx.doi.org/10.3390/coatings12020275.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.
26

Chu, Feihong, Mingyan Chen, Yin Wang, Yiqun Xie, Beiyun Liu, Yanhan Yang, Xingtao An, and Yongzhe Zhang. "A highly polarization sensitive antimonene photodetector with a broadband photoresponse and strong anisotropy." Journal of Materials Chemistry C 6, no. 10 (2018): 2509–14. http://dx.doi.org/10.1039/c7tc05488b.

Full text
APA, Harvard, Vancouver, ISO, and other styles
27

Lee, Hanleem, and Young Tea Chun. "Ferroelectric Induced UV Light-Responsive Memory Devices with Low Dark Current." Electronics 10, no. 16 (August 7, 2021): 1897. http://dx.doi.org/10.3390/electronics10161897.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
We developed solution-processed hybrid photodetectors with a poly (9-vinylcarbazole)/zinc oxide nanoparticle photoactive layer and a poly (vinylidene fluoride-co-trifluoroethylene) ferroelectric copolymer buffer layer on flexible plastic substrates. The presence of a ferroelectric-poling interface layer significantly enhanced the charge transfer and responsivity of the photodetectors under ultraviolet (UV, 365 nm) light exposure. The responsivity of the device reached 250 mA/W at a reverse bias of 5 V and incident light intensity of 27.5 μW/cm2. This responsivity was four times higher than that of a device without the ferroelectric copolymer layer (64 mA/W) under the same conditions. The response time of the device to incident UV light also improved from 322 to 34 ms with the addition of the ferroelectric copolymer layer. In addition, the flexible device exhibited a stable performance in an air environment up to a maximum strain of 0.3 under bending stress. Finally, a UV-light-responsive memory device was successfully fabricated by using the developed hybrid photodetector and liquid crystals. This device showed a colour change from white to black upon UV illumination, and the on-state of the device was maintained for 30 s without light exposure owing to the polarization of poly (vinylidene fluoride-co-trifluoroethylene).
28

Yang, Lian-hong, Kang-rong Lai, Bao-hua Zhang, Xiao-ling Fu, Jun-jun Wang, and Wei Wei. "Polarization enhanced photoresponse of AlGaN p-i-n photodetectors." physica status solidi (a) 212, no. 3 (January 12, 2015): 698–702. http://dx.doi.org/10.1002/pssa.201431506.

Full text
APA, Harvard, Vancouver, ISO, and other styles
29

Mondal, Shubham, Ding Wang, Ping Wang, Yuanpeng Wu, Mingtao Hu, Yixin Xiao, Subhajit Mohanty, Tao Ma, Elaheh Ahmadi, and Zetian Mi. "Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN." APL Materials 10, no. 12 (December 1, 2022): 121101. http://dx.doi.org/10.1063/5.0122943.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
The efficient photoelectric conversion based on the ferroelectric property of a material has attracted widespread attention in advanced optoelectronic systems. Such an electrically reconfigurable photovoltaic effect offers a unique opportunity for the development of self-powered ultraviolet (UV) photodetectors for a broad range of applications from the military to human health and the environment. To date, however, the low performance metrics of such photodetectors have hindered their integration with existing platforms. By exploring the unique optoelectronic properties of an ultrawide bandgap nitride ferroelectric (ScAlN), we demonstrate, for the first time, polarization dependent high-performance self-powered deep UV photodetectors. The responsivity at 193 nm illumination reached up to a maximum of 15 mA/W with a detectivity of 1.2 × 1011 Jones at an extremely low illumination intensity of 0.12 mW/cm2. Furthermore, the photodetectors exhibit wake-up free and reconfigurable photo-response, and fast and stable switching response time (<0.06 s) with excellent rejection to UV-A and visible illumination. The significant findings related to the growth, fabrication, and characterization reported in this work construct a viable route to realize unprecedentedly high performance self-powered ferroelectric UV photodetectors toward energy-efficient applications.
30

Wu, Wenhao, Yu Yu, Wei Liu, and Xinliang Zhang. "Fully integrated CMOS-compatible polarization analyzer." Nanophotonics 8, no. 3 (January 31, 2019): 467–74. http://dx.doi.org/10.1515/nanoph-2018-0205.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractPolarization measurement has been widely used in material characterization, medical diagnosis and remote sensing. However, existing commercial polarization analyzers are either bulky schemes or operate in non-real time. Recently, various polarization analyzers have been reported using metal metasurface structures, which require elaborate fabrication and additional detection devices. In this paper, a compact and fully integrated silicon polarization analyzer with a photonic crystal-like metastructure for polarization manipulation and four subsequent on-chip photodetectors for light-current conversion is proposed and demonstrated. The input polarization state can be retrieved instantly by calculating four output photocurrents. The proposed polarization analyzer is complementary metal oxide semiconductor-compatible, making it possible for mass production and easy integration with other silicon-based devices monolithically. Experimental verification is also performed for comparison with a commercial polarization analyzer, and deviations of the measured polarization angle are <±1.2%.
31

Wenger, Tobias, Richard Muller, Cory J. Hill, Anita Fisher, David Z. Ting, Daniel Wilson, Sarath D. Gunapala, and Alexander Soibel. "Infrared nBn detectors monolithically integrated with metasurface-based optical concentrators." Applied Physics Letters 121, no. 18 (October 31, 2022): 181109. http://dx.doi.org/10.1063/5.0121643.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
We demonstrate InAsSb-based infrared photodetectors monolithically integrated with metasurface lenses (metalenses) that act as optical concentrators. The metalenses are fabricated on the backside of a gallium antimonide substrate, and the photodetectors are fabricated on the frontside of the same substrate. The metalenses enhance the detector responsivity up to 10-fold and detectors retain the same detectivity at temperatures up to 40 K higher. Detectors integrated with metalenses exhibit detectivities greater than [Formula: see text] at [Formula: see text] μm up to room temperature. Our metasurface-based optical concentrators are based on circular subwavelength nanoposts, which renders their performance polarization independent.
32

Mo, Zhangxun, Fen Zhang, Danyang Wang, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, and Mianzeng Zhong. "Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire." Applied Physics Letters 120, no. 20 (May 16, 2022): 201105. http://dx.doi.org/10.1063/5.0093115.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range of the corresponding optoelectronic devices. In addition, building a Schottky diode and improving the crystal quality of the channel semiconductor can improve the photoresponse speed of the optoelectronic device. Here, we report the design and preparation of Bi1.85In0.15S3 nanowires by a facile chemical vapor transport method. The individual Bi1.85In0.15S3 nanowire photodetectors realize excellent photoresponse in a broadband range from solar-blind deep ultraviolet (266 nm) to near-infrared (830 nm), and the obtained maximum external photoresponsivity of 95.99 A/W and detectivity of about [Formula: see text] Jones at 638 nm. Furthermore, the photodetectors also exhibit the ultrafast photoresponse speed with the rise time of 190 ns and the fall time of 180 ns, owing to the high crystal quality and the Schottky contacts between the Au electrodes and nanowires. In addition, the photoresponse of photodetectors is polarization angle sensitive in a broadband range from 266 to 808 nm, and the obtained maximum dichroic ratio is 3.54 at 808 nm, which results from the structural anisotropy of the Bi1.85In0.15S3 crystal. These performances are superior to the reported Bi2S3, In2S3, and other Bi or In sulfide nanowire photodetectors. The results render (BixIn1−x)2S3 photodetectors have significant application potentials in multifunctional optoelectronics and electronics.
33

Wang, Danyang, Feiping Zhao, Fen Zhang, Zhangxun Mo, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, and Mianzeng Zhong. "Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution." Applied Physics Letters 121, no. 6 (August 8, 2022): 061104. http://dx.doi.org/10.1063/5.0102450.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Topological insulators are considered as one of the preferred materials for high-performance optoelectronic devices due to their small bulk bandgaps and ultra-high carrier mobility. However, the existence of their unique Dirac like surface states makes the corresponding optoelectronic devices to have high dark current, and the logic circuit cannot be turned off effectively. Opening the surface state gap by element doping is an effective means to achieve high performance of devices. Here, we design and prepare single crystal Bi2Se2.15S0.85 nanowires by a facile iodine-assisted chemical vapor transport method and a fabricated individual Bi2Se2.15S0.85 nanowire based photodetector. The devices exhibit remarkable photoresponse over the broadband wavelength ranging from ultraviolet C (275 nm) to near-infrared (1310 nm) with the low dark current of 10−12 A. They show superior optoelectrical properties with an ultrafast response speed of 170 ns, detectivity of 9.35 × 1011 Jones, a competitive responsivity of 1.31 A/W, and superb stability to keep great photoresponse for at least one year, which are superior to the reported photodetectors. Additionally, benefiting from the anisotropic crystal structure of Bi2Se2.15S0.85, the devices also display good polarization detection performance in a wide spectral range from 266 nm to 1064 nm with a dichroic ratio of 1.81 at 360 nm.
34

Li, Ying, Zhifeng Shi, Lintao Wang, Yancheng Chen, Wenqing Liang, Di Wu, Xinjian Li, Yu Zhang, Chongxin Shan, and Xiaosheng Fang. "Solution-processed one-dimensional CsCu2I3 nanowires for polarization-sensitive and flexible ultraviolet photodetectors." Materials Horizons 7, no. 6 (2020): 1613–22. http://dx.doi.org/10.1039/d0mh00250j.

Full text
APA, Harvard, Vancouver, ISO, and other styles
35

Perevedentsev, Aleksandr, Hadhemi Mejri, Luis A. Ruiz‐Preciado, Tomasz Marszalek, Uli Lemmer, Paul W. M. Blom, and Gerardo Hernandez‐Sosa. "Polarization‐Sensitive Photodetectors Based on Directionally Oriented Organic Bulk‐Heterojunctions." Advanced Optical Materials 10, no. 7 (February 24, 2022): 2102397. http://dx.doi.org/10.1002/adom.202102397.

Full text
APA, Harvard, Vancouver, ISO, and other styles
36

Zou, Qiushun, Yang Shen, Jian Ou-Yang, Yueli Zhang, and Chongjun Jin. "Polarization-insensitive graphene photodetectors enhanced by a broadband metamaterial absorber." Optics Express 29, no. 15 (July 15, 2021): 24255. http://dx.doi.org/10.1364/oe.433347.

Full text
APA, Harvard, Vancouver, ISO, and other styles
37

Panchenko, Evgeniy, Jasper J. Cadusch, Timothy D. James, and Ann Roberts. "Plasmonic Metasurface-Enabled Differential Photodetectors for Broadband Optical Polarization Characterization." ACS Photonics 3, no. 10 (September 20, 2016): 1833–39. http://dx.doi.org/10.1021/acsphotonics.6b00342.

Full text
APA, Harvard, Vancouver, ISO, and other styles
38

Feng, Jiangang, Xiaoxu Yan, Yun Liu, Hanfei Gao, Yuchen Wu, Bin Su, and Lei Jiang. "Crystallographically Aligned Perovskite Structures for High-Performance Polarization-Sensitive Photodetectors." Advanced Materials 29, no. 16 (February 15, 2017): 1605993. http://dx.doi.org/10.1002/adma.201605993.

Full text
APA, Harvard, Vancouver, ISO, and other styles
39

Lan, Chuntao, Haiyang Zou, Longfei Wang, Meng Zhang, Shuang Pan, Ying Ma, Yiping Qiu, Zhong Lin Wang, and Zhiqun Lin. "Revealing Electrical‐Poling‐Induced Polarization Potential in Hybrid Perovskite Photodetectors." Advanced Materials 32, no. 47 (October 21, 2020): 2005481. http://dx.doi.org/10.1002/adma.202005481.

Full text
APA, Harvard, Vancouver, ISO, and other styles
40

Zhang, Xinyuan, Lina Li, Chengmin Ji, Xitao Liu, Qing Li, Kun Zhang, Yu Peng, Maochun Hong, and Junhua Luo. "Rational design of high-quality 2D/3D perovskite heterostructure crystals for record-performance polarization-sensitive photodetection." National Science Review, March 16, 2021. http://dx.doi.org/10.1093/nsr/nwab044.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract Polarization-sensitive photodetection is central to optics applications and has been successfully demonstrated in photodetectors of two-dimensional (2D) materials, such as layered hybrid perovskites; however, achieving high polarization sensitivity in such a photodetector remains extremely challenging. Here, for the first time, we demonstrate a high-performance polarization-sensitive photodetector using single-crystalline 2D/3D perovskite heterostructure, namely, (4-AMP)(MA)2Pb3Br10/MAPbBr3 (MA = methylammonium; 4-AMP = 4-(aminomethyl)piperidinium), which exhibits ultrahigh polarization sensitivity up to 17.6 under self-driven mode. To our knowledge, such a high polarization selectivity has surpassed all of the reported perovskite-based devices, and is comparable to, or even better than, the traditional inorganic heterostructure-based photodetectors. Further studies reveal that the built-in electric field formed at the junction can spatially separate the photogenerated electrons and holes, reducing their recombination rate and thus enhancing the performance for polarization-sensitive photodetection. This work provides a new source of polarization-sensitive materials and insights into designing novel optoelectronic devices.
41

Pan, Yuan, Tao Zheng, Feng Gao, Ligan Qi, Wei Gao, Jielian Zhang, Ling Li, Kang An, Huaimin Gu, and Hongyu Chen. "High‐Performance Photoinduced Tunneling Self‐Driven Photodetector for Polarized Imaging and Polarization‐Coded Optical Communication based on Broken‐Gap ReSe2/SnSe2 van der Waals Heterojunction." Small, March 18, 2024. http://dx.doi.org/10.1002/smll.202311606.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractNovel 2D materials with low‐symmetry structures exhibit great potential applications in developing monolithic polarization‐sensitive photodetectors with small volume. However, owing to the fact that at least half of them presented a small anisotropic factor of ≈2, comprehensive performance of present polarization‐sensitive photodetectors based on 2D materials is still lower than the practical application requirements. Herein, a self‐driven photodetector with high polarization sensitivity using a broken‐gap ReSe2/SnSe2 van der Waals heterojunction (vdWH) is demonstrated. Anisotropic ratio of the photocurrent (Imax/Imin) could reach 12.26 (635 nm, 179 mW cm−2). Furthermore, after a facile combination of the ReSe2/SnSe2 device with multilayer graphene (MLG), Imax/Imin of the MLG/ReSe2/SnSe2 can be further increased up to13.27, which is 4 times more than that of pristine ReSe2 photodetector (3.1) and other 2D material photodetectors even at a bias voltage. Additionally, benefitting from the synergistic effect of unilateral depletion and photoinduced tunneling mechanism, the MLG/ReSe2/SnSe2 device exhibits a fast response speed (752/928 µs) and an ultrahigh light on/off ratio (105). More importantly, MLG/ReSe2/SnSe2 device exhibits excellent potential applications in polarized imaging and polarization‐coded optical communication with quaternary logic state without any power supply. This work provides a novel feasible avenue for constructing next‐generation smart polarization‐sensitive photodetector with low energy consumption.
42

Zhang, Xuran, Mingjin Dai, Wenjie Deng, Yongzhe Zhang, and Qi Jie Wang. "A broadband, self-powered, and polarization-sensitive PdSe2 photodetector based on asymmetric van der Waals contacts." Nanophotonics, January 11, 2023. http://dx.doi.org/10.1515/nanoph-2022-0660.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract Self-powered photodetectors with broadband and polarization-sensitive photoresponse are desirable for many important applications such as wearable electronic devices and wireless communication systems. Recently, two-dimensional (2D) materials have been demonstrated as promising candidates for self-powered photodetectors owing to their advantages in light–matter interaction, transport, electronic properties, and so on. However, their performance in speed, broadband response, and multifunction is still limited. Here, we report a PdSe2 photodetector with asymmetric van der Waals (vdWs) contacts formed by using a homojunction configuration. This device achieves a high responsivity approaching 53 mA/W, a rise/decay time of about 0.72 ms/0.24 ms, and a detectivity of more than 5.17 × 1011 Jones in the visible-near infrared regime (532–1470 nm). In addition, a linear polarization-sensitive response can be observed with an anisotropy ratio of 1.11 at 532 nm and 1.62 at 1064 nm. Furthermore, a strong anisotropic response endows this photodetector with outstanding polarization imaging capabilities, realizing a contrast-enhanced degree of linear polarization imaging. Our proposed device architecture demonstrated the great potential of PdSe2-based asymmetric vdWs contacts for high-performance photodetectors operating without any external bias.
43

Bai, Chongyang, Guangjian Wu, Jing Yang, Jianlu Wang, Yihan Liu, and Jinhua Zeng. "2D materials-based photodetectors combined with ferroelectrics." Nanotechnology, May 2, 2024. http://dx.doi.org/10.1088/1361-6528/ad4652.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current “Internet of Things” era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
44

Liu, Huawei, Chenguang Zhu, Ying Chen, Xiao Yi, Xingxia Sun, Yong Liu, Hui Wang, et al. "Polarization‐Sensitive Photodetectors Based on Highly In‐Plane Anisotropic Violet Phosphorus with Large Dichroic Ratio." Advanced Functional Materials, December 27, 2023. http://dx.doi.org/10.1002/adfm.202314838.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractAnisotropic 2D layered materials with distinctive anisotropic electronic band structures and optical response are promising for practical applications in polarization imaging and sensors. Nonetheless, many of the currently reported polarized photodetectors based on anisotropic 2D materials are constrained by the low polarization responsivity and low linear dichroism ratio. Here a high‐performance polarization‐sensitive photodetector based on the novel in‐plane anisotropy 2D violet phosphorus (VP) crystal is reported. The angle‐resolved polarized Raman spectroscopy (ARPRS) study and the anisotropic electrical transport measurements revealed the highly in‐plane anisotropy phonon vibration and electrical properties of VP crystal. The anisotropic ratio of electron mobility is calculated to be 2.7 at room temperature. Moreover, a polarization‐sensitive photodetector based on the VP nanosheet shows high photoresponsivity of up to 341 A W−1 and a linearly dichroic ratio of up to 3.9, which is much larger than most other anisotropic 2D materials. These results indicate that the anisotropic VP crystal would be suitable for polarization‐sensitive photodetectors, which leads to a promising perspective for future novel electronic and optoelectronic devices.
45

Xiong, Jingxian, Qiang Yu, Xingang Hou, Bin Liu, Sina Li, Haiqin Deng, Zixin Yang, et al. "Short‐Wave Infrared Photodetectors Based on β‐In2Se3/Te Heterojunctions for Optical Communication and Polarimetric Imaging Applications." Advanced Functional Materials, February 23, 2024. http://dx.doi.org/10.1002/adfm.202314972.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractPolarization‐sensitive infrared photodetectors have vast application prospects in imaging systems and polarization sensors due to the addition of new detection dimensions beyond wavelength and intensity. However, most polarization‐sensitive photodetectors are operated in the visible wavelength range and still encounter challenges of limited responsivity (R) and polarization ratio (PR) under short‐wave infrared illumination. To address these issues, a vertical heterostructure of β‐In2Se3‐on‐Te is reported, achieving high‐performance and polarization‐sensitive imaging sensors in the short‐wave infrared (SWIR) region. The high R (2 A/W at 1310 nm and 0.71 A/W at 1550 nm) and specific detectivity (2.14 × 109 Jones at 1310 nm and 7.3 × 108 at 1550 nm) are obtained, which surpasses most photodetectors using anisotropic 2D material in the infrared range. Considering the strong anisotropic nature of Te nanosheets, the device exhibits notable polarization sensitivity with a PR value of 4.95 under 1310 nm laser irradiation. This work proposes a multifunctional photodetector for the great applications of ASCII code transmission and polarization‐sensitive infrared imaging, offering a new opportunity for versatile angle‐resolved optoelectronics in the infrared communication band.
46

Cheng, Jiaxin, Weike Wang, Chao An, Liushun Wang, Jia Yang, Yanling Yin, Weichang Zhou, Yuehua Peng, and Dongsheng Tang. "Quasi-1D SbSeI for a high-performance near-infrared polarization-sensitive photodetector." Applied Physics Letters 124, no. 10 (March 4, 2024). http://dx.doi.org/10.1063/5.0191682.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Near-infrared photodetectors with polarization-sensitive capabilities have garnered significant attention in modern optoelectronic devices. SbSeI, one of the quasi-1D ternary V–VI–VII compounds, exhibits enormous advantages in near-infrared polarization detection due to its suitable bandgap and pronounced anisotropy. Here, SbSeI nanowires were obtained by a mechanical exfoliation method from the bulk crystals, and the photoelectric properties and anisotropy were systematically investigated. The as-fabricated photodetector exhibits a wide spectral photoresponse range from visible to near-infrared (445–980 nm), recording a responsivity of 825.0 mA/W and a specific detectivity of 6.9 × 1010 Jones. Importantly, the strong anisotropy of phonon vibrations was demonstrated via angle-resolved polarization Raman spectroscopy, and the photodetector exhibits a photocurrent dichroic ratio up to 1.69 at 980 nm. These results reveal that SbSeI is a highly in-plane anisotropic semiconductor and a promising candidate material for high-performance broadband polarization-sensitive photodetectors. Our work also sheds light on the future research interest in the group V–VI–VII semiconductors.
47

Jiang, Jingzan, Yadan Deng, Jia Li, Min Guo, Jun Sun, Xiaolong Li, Zhidong Lou, Yanbing Hou, Yufeng Hu, and Feng Teng. "Multifunctional Photodetector with Tunable Response Bandwidth and Polarization Sensitivity." Advanced Functional Materials, April 10, 2024. http://dx.doi.org/10.1002/adfm.202400175.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractMultifunctional organic photodetectors (MFOPDs) have garnered significant attention due to their remarkable potential for integrating diverse device functionalities. In contrast to previous MFOPDs that have primarily emphasized the integration of various response bands, a pioneering multifunctional photodetector is introduced based on the P3HT:PC61BM system capable of selectively responding to both wavelength and polarization. Under positive bias, the device operates in a wide‐band, polarization‐insensitive mode, achieving an external quantum efficiency (EQE) of up to 7.01 × 104%. The EQE dichroic ratio (DR) of the device remains <1.01 (at 650 nm). Conversely, under negative bias, the device transitions into a narrow‐band, polarization‐sensitive mode, achieving an EQE of up to 4.82 × 104% with a narrow full width at half maximum (FWHM) of only 25 nm at 650 nm. The EQE DR exceeds 10 in this mode, marking it as one of the highest values within the field of polarization‐sensitive organic photodetectors. This versatile operation is made possible through the strategic use of double‐sided barriers, an oriented light harvesting layer, and a charge injection narrowing (CIN) approach. This work represents a significant advancement toward the realization of multifunctional photodetectors capable of selecting response bands and polarization sensitivity.
48

Abnavi, Amin, Ribwar Ahmadi, Hamidreza Ghanbari, Mirette Fawzy, Mohammad Reza Mohammadzadeh, Fahmid Kabir, and Michael M. Adachi. "Polarization‐Sensitive and Self‐Driven Pyro‐Phototronic Photodetectors Based on MoS2‐Water Heterojunctions." Advanced Optical Materials, February 7, 2024. http://dx.doi.org/10.1002/adom.202302651.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractPolarization‐sensitive and self‐driven pyroelectric‐based photodetectors have recently gained interest due to their potential application in artificial electronic eyes, biomedical imaging, and optical switches. Here, a photodetector based on light modulation‐induced polarization and depolarization of water molecules on the surface of a 2D MoS2 crystal is reported. The MoS2‐water heterostructure photodetector serves as a self‐driven pyro‐phototronic device that converts light‐induced thermal energy to electrical signals, leading to a transient photoresponsivity as high as 24.6 mA W−1 and a specific detectivity of 2.85 × 108 Jones under 470 nm wavelength at zero bias. Due to the formation of a built‐in electric field at the MoS2‐water interface, this structure also has a high steady–state responsivity of 3.62 A W−1 and detectivity of 9.18 × 108 Jones at 3 V bias, along with a fast response time of ≈0.74 ms. Moreover, due to the rearrangement of the hydrogen bond network in the liquid water upon visible light illumination, the MoS2‐water photodetector is light polarization‐sensitive. The simple fabrication process, low cost, polarization sensitivity, and high performance of the MoS2‐water structure make it an excellent candidate for liquid‐compatible photodetectors.
49

Kim, Sungjun, Sunghun Lee, Seyong Oh, Kyeong‐Bae Lee, Je‐Jun Lee, Byeongchan Kim, Keun Heo, and Jin‐Hong Park. "Broadband Van‐der‐Waals Photodetector Driven by Ferroelectric Polarization." Small, September 7, 2023. http://dx.doi.org/10.1002/smll.202305045.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractThe potential for various future industrial applications has made broadband photodetectors beyond visible light an area of great interest. Although most 2D van‐der‐Waals (vdW) semiconductors have a relatively large energy bandgap (>1.2 eV), which limits their use in short‐wave infrared detection, they have recently been considered as a replacement for ternary alloys in high‐performance photodetectors due to their strong light‐matter interaction. In this study, a ferroelectric gating ReS2/WSe2 vdW heterojunction‐channel photodetector is presented that successfully achieves broadband light detection (>1300 nm, expandable up to 2700 nm). The staggered type‐II bandgap alignment creates an interlayer gap of 0.46 eV between the valence band maximum (VBMAX) of WSe2 and the conduction band minimum (CBMIN) of ReS2. Especially, the control of poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) ferroelectric dipole polarity for a specific wavelength allows a high photoresponsivity of up to 6.9 × 103 A W−1 and a low dark current below 0.26 nA under the laser illumination with a wavelength of 405 nm in P‐up mode. The achieved high photoresponsivity, low dark current, and full‐range near infrared (NIR) detection capability open the door for next‐generation photodetectors beyond traditional ternary alloy photodetectors.
50

Zhao, Yiman, Zhonghao Zhou, Xiaolong Liu, Ang Ren, Shiyang Ji, Yuwei Guan, Zhen Liu, et al. "Chiral 2D/Quasi‐2D Perovskite Heterojunction Nanowire Arrays for High‐Performance Full‐Stokes Polarization Detection." Advanced Optical Materials, August 11, 2023. http://dx.doi.org/10.1002/adom.202301239.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
AbstractThe realization of Stokes photodetectors accelerates the development of various modern optoelectronic applications. Chiral 2D perovskites with intrinsic chiral optical activity and superior carrier mobility are promising for next‐generation full‐Stokes polarization detection. So far, most of the chiral 2D metal‐halide perovskite‐based photodetectors suffer from limited discrimination of circularly polarized light due to the high exciton recombination rate in single‐phase perovskite, impeding the accurate measurement for Stokes parameters. Here, an on‐chip Stokes photodetector based on chiral 2D/quasi‐2D perovskite lateral heterojunction nanowire (NW) arrays with high polarization selectivity and photoresponsiveness is reported. The highly‐aligned heterojunction NW arrays not only build up a built‐in electric field for enhanced chiral discrimination, but also possess intrinsic anisotropy that enables outstanding linear polarization response. On this basis, the device exhibits reliable ability for polarization detection with a high anisotropy factor of 0.38, an outstanding polarized ratio of 1.5, and an excellent responsivity of 22.14 A W−1. These results will provide useful enlightenment for direct full‐Stokes polarization detection in optoelectronic integrated circuits.

To the bibliography