Journal articles: 'Plasma treatment, PECVD, plasma deposition, biocompatibility'

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Teske, Michael, Sabine Illner, Jana Markhoff, Niels Grabow, and Stefan Oschatz. "Ultrathin fibre coatings on nanofibrous nonwovens by plasma enhanced chemical vapor deposition." Current Directions in Biomedical Engineering 7, no. 2 (October 1, 2021): 535–38. http://dx.doi.org/10.1515/cdbme-2021-2136.

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Abstract For the generation of tailor-made polymer coatings on nanofibrous nonwovens plasma enhanced chemical vapor (PECVD) is a promising process, even for complex geometries. The plasma coatings can greatly improve their suitability for biomedical applications by optimising biocompatibility to the local needs, especially for cardiovascular disease treatments. Therein, wound healing and endothelialisation are important steps which are connected by a complex interaction. The monomers allylamine and hexamethyldisiloxane, as well as different process conditions were studied for the coating of nanofibrous thermoplastic silicone polycarbonate polyurethane (TSPCU) nonwovens. Aim of this study was to investigate the feasibility of plasma polymer coating under preservation of the nanofibrous morphological structure. Beside characterization of the nonwoven, biological evaluation with endothelial and fibroblast cells was performed. The prepared nonwoven samples support the feasibility of plasma coating under preservation of the nanofibrous structure. Also, different effects of the surfaces in contact with fibroblasts and endothelial cells could be observed.

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Terriza, Antonia, Jose I. Vilches-Pérez, Emilio de la Orden, Francisco Yubero, Juan L. Gonzalez-Caballero, Agustin R. González-Elipe, José Vilches, and Mercedes Salido. "Osteoconductive Potential of Barrier NanoSiO2PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition." BioMed Research International 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/253590.

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The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2nanolayer were identified in our model. The novedous SiO2deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes.

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Fares, Chaker, Randy Elhassani, Jessica Partain, Shu-Min Hsu, Valentin Craciun, Fan Ren, and Josephine F. Esquivel-Upshaw. "Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics." Materials 13, no. 10 (May 21, 2020): 2375. http://dx.doi.org/10.3390/ma13102375.

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To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N2 plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N2 plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N2 plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC’s chemical durability. By combining N2 plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO2 layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N2 plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.

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Cho, Cha, and Kim. "Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator." Materials 12, no. 23 (November 29, 2019): 3968. http://dx.doi.org/10.3390/ma12233968.

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The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen–plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD.

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Enisherlova, Kira L., Lev A. Seidman, Ella M. Temper, and Yuliy A. Kontsevoy. "Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures." Modern Electronic Materials 7, no. 2 (June 30, 2021): 63–71. http://dx.doi.org/10.3897/j.moem.7.2.73293.

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The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.

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Baheti, Wufanbieke, Ming Xin Li, Fu Guo Wang, Jin Ge Song, Long Hua Xu, and Bin Liu. "The Biocompatibility of Ti Alloy Improved by Nitrogen-Doped Diamond-Like Carbon Films." Applied Mechanics and Materials 711 (December 2014): 250–54. http://dx.doi.org/10.4028/www.scientific.net/amm.711.250.

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The nitrogen-doped diamond-like carbon film was prepared on Ti6Al4V alloy by using plasma enhanced chemical vapor deposition (PECVD) technique,and its biocompatibility was studied.The surface morphology,chemical composition and contact angle were measured by scanning electron microscope (SEM),X-ray photoelectron spectroscopy(XPS),Raman Spectrometer and contact angle measuring device. Finally, the proliferation rate and cellular morphology of 3T3-E1 osteoblast cells on different sample surfaces were tested and Image J software was used to statistically analyze the count of the adhered cells. The results showed that cell adhesion and proliferation were significantly (P<0.05) increased on nitrogen-doped diamond-like carbon films , which illustrated that N doping improved the biocompatibility of DLC films. This finding has potential clinical application value to modify titanium alloy for new bone formation.

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Lei, Jin Song, Yin Sheng Zou, and Zhao Qiang Zhang. "Influence of p/i Interface Treatment on the Flexible Thin Film Solar Cells for Application in Building Integrated Photovoltaics." Advanced Materials Research 287-290 (July 2011): 1259–62. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1259.

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Nip type flexible a-Si solar cells for application in building integrated photovoltaics (BIPV) were deposited by plasma enhanced chemical vapor deposition (PECVD) method. In order to improve the efficiency and stability of the device, p-type microcrystalline silicon (μc-Si:H) film was used as the window layers. H plasma treatment was applied on the p/i interface and nucleation layer was introduced to enhance the deposition of p-type μc-Si:H film on the surface of a-Si:H. Results suggest that with the application of H plasma treatment and the nucleation layer introduction, high quality p-type μc-Si:H film and high efficiency flexible solar cells were obtained.

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Zarchi, Meysam, Sharokh Ahangarani, and Maryam Zare Sanjari. "The role of PECVD hard coatings on the performance of industrial tools." Metallurgical and Materials Engineering 20, no. 1 (March 31, 2014): 15–22. http://dx.doi.org/10.5937/metmateng1401015z.

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The advantages of the application of hard coatings, which are well knownfor cutting tools, are to a much lesser extent explored for casting, extrusion, molding and forming tools. Increasing the lifetime of these tools is an important task in surface engineering because of complex loading conditionsand often complicated tool geometry. The plasma-enhanced chemical vapor deposition (PECVD) technique is well suited to deposit hard coatings onto large dies and moulds. The aim of this study was to discuss deposition processes suitable for coating of the often large three-dimensional molds and dies used in metal forming. Furthermore, results obtained using different hard coatings in industrial applications for several case studies like aluminum pressure die-casting; plastics injection molding and sheet metal forming are presented and discussed. For best coating performance, a careful optimization of both substrate pretreatment and coating deposition is necessary. The plasma-enhanced chemical vapor deposition (PECVD) technique shows advantages for these applications because of the high flexibility in pre-treatment using chemical etching and plasma-nitriding, because of its ability to coat large complexly shaped tools and because of the possibility of deposition of low-chlorine containing low-friction coatings.

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Tatoulian, Michael, Enrico Gallino, R. Jafari, Farzaneh Arefi-Khonsari, L. Tatoulian, Jean Pascal Borra, François Lewis, and D. Mantovani. "Plasma and Electrospray Deposition to Improve the Biocompatibility of Stents." Materials Science Forum 539-543 (March 2007): 529–34. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.529.

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Metallic Intravascular stents are medical devices used to scaffold a biological lumen, mostly diseased arteries, after balloon angioplasty. They are commonly made of 316L stainless steel or Nitinol, two alloys containing Nickel, an element classified as potentially toxic and carcinogenic. Although they are largely implanted, the long-term safety of such metallic elements is still controversial, since the corrosion processes may lead to the release of several metallic ions. In order to avoid the metallic ion release in the body and to improve the biocompatibility of metallic stents with their biological environments, polymer coatings have been deposited by two different technologies, i.e. plasma surface modifications and Electrospraying. The role of the polymer coating is then to encapsulate the stainless steel device, and to favour the chemical grafting of Phosphorylcholine, a molecule known for its hemocompatible properties.1 In this talk, the state of the art on low pressure and atmospheric pressure plasmas for deposition of organic coatings will be given and we will present the advantages and drawbacks of each process. Then, we will present an original technology that combine a Dielectric Barrier Discharge and an electrospraying system to deposit well-defined Polyacrylic acid and Polyallylamine films. The advantage of such system is the possibility to limit the extent of the monomer fragmentation and to give rise to rapid deposition of a highly functionalised plasma polymer layer, and also the possibility to cover three dimensional objects, such as stents. Thus, the theory of EHDA technology will be explained: special attention has been paid to define the Electrospray parameters (Voltage, flow of precursor, nozzle-substrate distance…) which control the size distribution of the charged droplets and as a consequence, the structure of the film coating. The film coatings have been analysed with XPS and by ATR. Moreover, special attention will be paid on the stability of the coating which is related to both spraying conditions as well as to the preliminary plasma treatment. The potentiality and the features of the EHDA process will be then presented.

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JIANG, JIN, and SUK JAE CHUNG. "HYDROGEN-FREE DIAMOND-LIKE CARBON DEPOSITED BY A LAYER-BY-LAYER TECHNIQUE USING PECVD." International Journal of Modern Physics B 14, no. 02n03 (January 30, 2000): 154–66. http://dx.doi.org/10.1142/s0217979200000157.

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We developed a hydrogen-free diamond like carbon (DLC) film by a novel deposition technique of a layer-by-layer technique using plasma enhanced chemical vapor deposition (PECVD) in which a repeated deposition of a thin DLC layer and subsequently CF 4 plasma treatment on its surface have been carried out. The electrical, optical and structural properties of the DLC films deposited depend on the CF 4 plasma exposure time. The hydrogen content is less than 1 at % when the CF4 plasma exposure time is 140s. Its emission current is much higher and stability is much improved compared with conventional DLC.N-type, hydrogen-free DLC could be obtained by N ion doping N2 gas-phase doping in the CF 4 plasma. The optimum [ N 2][ CH 4] flow rate was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V /μ. The nitrogen gas-phase doped hydrogen-free DLC coating on Mo tip field emitter arrays (FEAs) increased the electron emission current from 160μ A to 1.52 mA and improved the stability in electron emission current.

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Chen, Yi-Ming, Chien-Hung Wu, Kow-Ming Chang, Yu-Xin Zhang, Ni Xu, Tsung-Ying Yu, and Albert Chin. "Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4110–13. http://dx.doi.org/10.1166/jnn.2020.17556.

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Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

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Zhang, Zhi Qiu, Wen Fang Yang, Zhen Ya Gu, and Rui Ting Huo. "PVDF Films with Superhydrophobic Surface Fabricated by Plasma-Enhanced Chemical Vapor Deposition." Advanced Materials Research 79-82 (August 2009): 1451–54. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.1451.

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Lotus effect is well-known to be governed by chemical properties and nanotextures of the surfaces. In this paper, a method with two-steps treatment technology was applied to develop the superhydrophobic polyvinylidene fruoride(PVDF) membrane with the property of anti-contamination and self-cleaning. First, the PVDF membrane was treated by oxygen plasma so as to get the reactive groups. Second, this film was deposited by perfluoroalkylethyl acrylate precursor/Ar gas via plasma-enhanced chemical vapor deposition (PECVD). The modified film surface exhibited ultra water-repellent ability, showing that the water contact angles was larger than 150 °and the dynamic contact angles was usually lower than 5°.

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Muster, Dominique, Makram Hage-Ali, Kyong-Tschong Rie, Thomas Stucky, Alain Cornet, and Didier Mainard. "Plasma Deposition, Plasma Coating, and Ion Implantation to Improve Metallic Implants and Prostheses." MRS Bulletin 25, no. 1 (January 2000): 25–32. http://dx.doi.org/10.1557/s0883769400064988.

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In spite of the success of surgical implants such as artificial hip joints, the materials used to make them are not always quite up to the job. Even stainless steel and titanium alloys can break under the enormous stress on load-bearing joints and corrode in the salty environment of the body. Deposits of inorganic salts can scratch weight-bearing surfaces, making artificial joints stiff and awkward. As a result, the lifetime of an implant is, at most, 10–15 years.Metallurgists and engineers often treat the surfaces of metal parts to improve their properties. The use of advanced surface-treatment techniques such as glow-discharge ion implantation, plasma deposition, and plasma coating can significantly improve the strength, hardness, and corrosion resistance of metal implants. At the same time, these methods should also improve the biocompati-bility of the implanted devices.Cobalt-based alloys are widely used for joint replacements. However, other compounds, such as titanium alloys, have excellent potential biocompatibility and interesting but imperfect mechanical properties. Stainless steel, namely 316L, has a good price-to-mechanical-properties ratio, but has the lowest corrosion resistance of the most commonly used metallic biomaterials.

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LEI, Q. S., H. X. XU, and J. P. XU. "DEVELOPMENT OF HIGHLY CONDUCTIVE P-TYPE MICROCRYSTALLINE SILICON FILMS FOR N–I–P FLEXIBLE SOLAR CELLS APPLICATION." International Journal of Modern Physics B 24, no. 28 (November 10, 2010): 5527–38. http://dx.doi.org/10.1142/s0217979210056931.

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In this paper, we reported highly conductive p-type microcrystalline silicon (μc- Si:H ) films deposited on amorphous silicon (a- Si:H ) surface by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) technique. Hydrogen plasma treatment of amorphous silicon surface and nucleation layers were introduced prior to μc- Si:H films deposition. The film properties were investigated by using Raman spectra, scanning electron microscope (SEM), optical transmission and reflection, as well as dark conductivity measurements. The influence of plasma treatment and nucleation layer on the growth and properties of the thin p-type μc- Si:H films was studied. It is demonstrated that the hydrogen plasma treatment of a- Si:H films gives rise to the deposition of μc- Si:H on the a- Si:H surface. Also, the growth and properties of the μc- Si:H films are strongly dependent on the nucleation layer. The dark conductivity (σd) and crystalline fraction increase with the plasma treatment time and attain high values at about 600 s. A p-type μc- Si:H film with conductivity of 0.0875 Scm-1 at a thickness of 30 nm was obtained. The film was introduced as window layers for flexible solar cells. An efficiency of about 7.15% was obtained.

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Kapica, Ryszard, Justyna Markiewicz, Ewa Tyczkowska-Sieroń, Maciej Fronczak, Jacek Balcerzak, Jan Sielski, and Jacek Tyczkowski. "Artificial Superhydrophobic and Antifungal Surface on Goose Down by Cold Plasma Treatment." Coatings 10, no. 9 (September 20, 2020): 904. http://dx.doi.org/10.3390/coatings10090904.

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Plasma treatment, especially cold plasma generated under low pressure, is currently the subject of many studies. An important area using this technique is the deposition of thin layers (films) on the surfaces of different types of materials, e.g., textiles, polymers, metals. In this study, the goose down was coated with a thin layer, in a two-step plasma modification process, to create an artificial superhydrophobic surface similar to that observed on lotus leaves. This layer also exhibited antifungal properties. Two types of precursors for plasma enhanced chemical vapor deposition (PECVD) were applied: hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN). The changes in the contact angle, surface morphology, chemical structure, and composition in terms of the applied precursors and modification conditions were investigated based on goniometry (CA), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy in attenuated total reflectance mode (FTIR-ATR), and X-ray photoelectron spectroscopy (XPS). The microbiological analyses were also performed using various fungal strains. The obtained results showed that the surface of the goose down became superhydrophobic after the plasma process, with contact angles as high as 161° ± 2°, and revealed a very high resistance to fungi.

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Januś, M., K. Kyzioł, S. Kluska, J. Konefał-Góral, A. Małek, and S. Jonas. "Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings." Archives of Metallurgy and Materials 60, no. 2 (June 1, 2015): 909–14. http://dx.doi.org/10.1515/amm-2015-0228.

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Abstract Plasma Assisted Chemical Vapour Deposition (PA CVD) method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy) and improving of the wear resistance (in the case of PEEK substrate).

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Gosar, Žiga, Janez Kovač, Denis Đonlagić, Simon Pevec, Gregor Primc, Ita Junkar, Alenka Vesel, and Rok Zaplotnik. "PECVD of Hexamethyldisiloxane Coatings Using Extremely Asymmetric Capacitive RF Discharge." Materials 13, no. 9 (May 6, 2020): 2147. http://dx.doi.org/10.3390/ma13092147.

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An extremely asymmetric low-pressure discharge was used to study the composition of thin films prepared by PECVD using HMDSO as a precursor. The metallic chamber was grounded, while the powered electrode was connected to an RF generator. The ratio between the surface area of the powered and grounded electrode was about 0.03. Plasma and thin films were characterised by optical spectroscopy and XPS depth profiling, respectively. Dense luminous plasma expanded about 1 cm from the powered electrode while a visually uniform diffusing plasma of low luminosity occupied the entire volume of the discharge chamber. Experiments were performed at HMDSO partial pressure of 10 Pa and various oxygen partial pressures. At low discharge power and small oxygen concentration, a rather uniform film was deposited at different treatment times up to a minute. In these conditions, the film composition depended on both parameters. At high powers and oxygen partial pressures, the films exhibited rather unusual behaviour since the depletion of carbon was observed at prolonged deposition times. The results were explained by spontaneous changing of plasma parameters, which was in turn explained by the formation of dust in the gas phase and corresponding interaction of plasma radicals with dust particles.

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Kim, Byoung-June, Young-Cheol Kim, Dong-Kak Lee, and Jung-Joong Lee. "The effect of NH3 plasma pre-treatment on the properties of TiN coatings produced by plasma-enhanced chemical vapor deposition (PECVD)." Surface and Coatings Technology 111, no. 1 (January 1999): 56–61. http://dx.doi.org/10.1016/s0257-8972(98)00707-5.

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Vesel, Alenka. "Deposition of Chitosan on Plasma-Treated Polymers—A Review." Polymers 15, no. 5 (February 23, 2023): 1109. http://dx.doi.org/10.3390/polym15051109.

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Materials for biomedical applications often need to be coated to enhance their performance, such as their biocompatibility, antibacterial, antioxidant, and anti-inflammatory properties, or to assist the regeneration process and influence cell adhesion. Among naturally available substances, chitosan meets the above criteria. Most synthetic polymer materials do not enable the immobilization of the chitosan film. Therefore, their surface should be altered to ensure the interaction between the surface functional groups and the amino or hydroxyl groups in the chitosan chain. Plasma treatment can provide an effective solution to this problem. This work aims to review plasma methods for surface modification of polymers for improved chitosan immobilization. The obtained surface finish is explained in view of the different mechanisms involved in treating polymers with reactive plasma species. The reviewed literature showed that researchers usually use two different approaches: direct immobilization of chitosan on the plasma-treated surface or indirect immobilization by additional chemistry and coupling agents, which are also reviewed. Although plasma treatment leads to remarkably improved surface wettability, this was not the case for chitosan-coated samples, where a wide range of wettability was reported ranging from almost superhydrophilic to hydrophobic, which may have a negative effect on the formation of chitosan-based hydrogels.

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Zhang, Hua, Guo Ran Hua, and Hong Cheng. "Pulsed Laser Crystallization of Silicon Films Deposited by PECVD." Advanced Materials Research 486 (March 2012): 432–36. http://dx.doi.org/10.4028/www.scientific.net/amr.486.432.

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Pulsed laser was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon (a-Si:H) films deposited on Si wafer. The amorphous films were deposited on (111) Si wafers by plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a low frequency Nd:YAG laser. The crystallinity modifications induced by the laser treatment were evidenced by X-ray diffraction and atomic force microscope (AFM). The influence of laser frequency on the crystallization degree was analyzed in detail. The better crystallinity was obtained at the laser frequency of 10Hz.

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Ermakova, Evgeniya, Alexey Kolodin, Anastasiya Fedorenko, Irina Yushina, Vladimir Shayapov, Eugene Maksimovskiy, and Marina Kosinova. "Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture." Coatings 13, no. 2 (January 30, 2023): 310. http://dx.doi.org/10.3390/coatings13020310.

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PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions.

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Zhao, Qing Nan, Wen Hui Yuan, Hong Yu Liang, Wei Yuan Wang, Pu Lei Yang, and Yu Hong Dong. "Stability of AZO Thin Films under the Environment of Hydrogen Plasma." Advanced Materials Research 194-196 (February 2011): 2334–39. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2334.

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The textured thin films of Aluminum-doped zinc oxide (AZO), prepared on glass substrates by magnetron sputtering, were treated under the environment of hydrogen plasma in plasma enhanced chemical vapor deposition (PECVD) chamber for different time. The structure and properties of the thin films before and after the treatment were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis –NIR spectrometer. The results obtained showed that, after the treatment, the crystal structure of the films was not obviously changed, the roughness of the films was reduced, the carrier concentration and Hall mobility of the films increased to a certain saturated level with the treatment time, and the conductivity of the films increased. The transmittance and optical band gap of the AZO films was not affected by plasma treatment.

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Bulkin, Pavel, Patrick Chapon, Dmitri Daineka, Guili Zhao, and Nataliya Kundikova. "PECVD SiNx Thin Films for Protecting Highly Reflective Silver Mirrors: Are They Better Than ALD AlOx Films?" Coatings 11, no. 7 (June 26, 2021): 771. http://dx.doi.org/10.3390/coatings11070771.

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Protection of silver surface from corrosion is an important topic, as this metal is highly susceptible to damage by atomic oxygen, halogenated, acidic and sulfur-containing molecules. Protective coatings need to be efficient at relatively small thicknesses, transparent and must not affect the surface in any detrimental way, during the deposition or over its lifetime. We compare PECVD-deposited SiNx films to efficiency of ALD-deposited AlOx films as protectors of front surface silver mirrors against damage by oxygen plasma. Films of different thickness were deposited at room temperature and exposed to O2 ECR-plasma for various durations. Results were analyzed with optical and SEM microscopy, pulsed GD-OES, spectroscopic ellipsometry and spectrophotometry on reflection. Studies indicate that both films provide protection after certain minimal thickness. While this critical thickness seems to be smaller for SiNx films during short plasma exposures, longer plasma treatment reveals that the local defects in PECVD-deposited films (most likely due to erosion of some regions of the film and pinholes) steadily multiply with time of treatment and lead to slow drop of reflectance of SiNx-protected mirrors, whereas we showed before that ALD-deposited AlOx films reliably protect silver surface during long plasma exposures.

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Uvarov A. V., Sharov V. A., Kudryashov D. A., and Gudovskikh A. S. "Impact of silicon wafer surface treatment on the morphology of GaP layers produced by plasma enhanced atomic layer deposition." Semiconductors 56, no. 2 (2022): 160. http://dx.doi.org/10.21883/sc.2022.02.53701.9748.

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Investigations of atomic-layer deposition of GaP layers on Si substrates with different orientations and with different preliminary surface treatment have been carried out. The deposition of GaP was carried out by the method of plasma enhanced atomic-layer deposition using in situ treatment in argon plasma. It was shown that at the initial stage of the growth of GaP layers on precisely oriented (100) Si substrates and with misorientation, two-dimensional growth occurs both after chemical and plasma surface treatment. Upon growth on (111) substrates, after plasma treatment of the surface, a transition to three-dimensional growth is observed, at which the size of islands reaches 30-40 nm. The smallest root-mean-square roughness of the surface of the growing GaP layers (<0.1 nm) was achieved for (100) substrates with a misorientation of 4o. The GaP layers grown on (100) substrates had a roughness of ~0.1 nm, and on substrates with the (111) orientation --- 0.12 nm. It was found that the surface treatment of Si substrates with the (100) orientation in hydrogen plasma leads to a slight increase in the surface roughness of growing GaP layers (0.12-0.14 nm), which is associated with the effect of inhomogeneous etching of silicon in hydrogen plasma. When treating the (100) silicon surface in argon plasma, the surface roughness does not change significantly in comparison with the chemical surface treatment. On the surface of substrates with preliminary deposition of an epitaxial Si layer with a thickness of 4 nm, the morphology of GaP layers is the same as in the case of using hydrogen plasma. Keywords: PECVD, ALD, silicon, gallium phosphide

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Kluska, Stanisława, Elżbieta Pamuła, Stanisława Jonas, and Zbigniew Grzesik. "Surface Modification of Polyetheretherketone by Helium/nitrogen and Nitrous Oxide Plasma Enhanced Chemical Vapour Deposition." High Temperature Materials and Processes 33, no. 2 (April 1, 2014): 147–53. http://dx.doi.org/10.1515/htmp-2013-0022.

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AbstractThe surface of the polyetheretherketone (PEEK) samples was modified by the plasma enhanced chemical vapor deposition (PECVD) in the mixture of He and N2 as well as in the N2O atmosphere. Morphological characterization of the PEEK as well as its surface roughness, chemical structure, and surface free energy were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and sessile drop technique, respectively. The highest increase in the polar component of the total surface energy was observed for PEEK modified by He+N2 plasma, which correlated with significant increase in the concentration of oxygen and nitrogen-containing chemical functionalities as revealed by XPS. For PEEK submitted to N2O plasma treatment significant changes in surface topography and increase in roughness were observed, but changes in surface chemistry and surface free energy were mild.

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Rho, Keonho, Chan Park, Khurshed Alam, Dongyun Kim, Min-Kyung Ji, Hyun-Pil Lim, and Hoonsung Cho. "Biological Effects of Plasma-Based Graphene Oxide Deposition on Titanium." Journal of Nanomaterials 2019 (November 3, 2019): 1–7. http://dx.doi.org/10.1155/2019/9124989.

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This study was performed to investigate the effects of argon plasma treatment under atmospheric pressure at room temperature on the cytotoxicity and antimicrobial effects of the graphene oxide layer on titanium. Plasma treatment of the graphene oxide coating on a nonthermal atmospheric-pressure plasma device was performed. Raman spectrum analysis confirmed that graphene oxide was successfully coated on the surface and AFM analysis confirmed that this coating affected the surface roughness. X-ray photoelectron spectroscopy (XPS), Alizarin Red S staining for cell differentiation, and Raman and atomic force microscopy (AFM) analyses were performed for the deposited surface. The MTT (3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) assay was performed to confirm the biocompatibility of the plasma-treated and bare titanium specimens. The biofilm formation test using Streptococcus mutans (S. mutans) was performed to examine potential antimicrobial effects. XPS analysis showed that with increasing plasma coating time, the carbon content of the surface decreased while that of oxygen increased. Alizarin Red S staining showed that the cell differentiation was promoted by the deposition of the graphene oxide. The graphene oxide on Ti significantly affected an osteoblast cell differentiation for bone growth, and no significant differences in antimicrobial effects were observed.

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Demina, Tatiana S., Mikhail S. Piskarev, Aisylu V. Birdibekova, Nadezhda N. Veryasova, Anastasia I. Shpichka, Nastasia V. Kosheleva, Andrey K. Gatin, et al. "Effective and Easy Techniques of Collagen Deposition onto Polylactide Films: DC-Discharge Plasma Treatment vs. Chemical Entrapment." Polymers 14, no. 22 (November 12, 2022): 4886. http://dx.doi.org/10.3390/polym14224886.

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Enhancement of cell adhesion and growth on surface of the biodegradable materials is one of the important tasks in development of materials for regenerative medicine. This work focuses on comparison of various methods of collagen coating deposition onto polylactide films, aiming to increase their biocompatibility with human mesenchymal stromal cells. The collagen deposition was realized using either preliminary plasma treatment of the polylactide films or pre-swelling in solvent mixture. These techniques were compared in terms of the effect on the surface’s chemical structure, morphology, hydrophilicity and ability to support adhesion and growth of human mesenchymal stromal cells.

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Xu, Hua, Jing-Dong Liu, Wei Cai, Min Li, Miao Xu, Hong Tao, Jian-Hua Zou, and Jun-Biao Peng. "Effect of N 2O treatment on performance of back channel etched metal oxide thin film transistors." Acta Physica Sinica 71, no. 5 (2022): 058503. http://dx.doi.org/10.7498/aps.71.20211350.

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In this paper, the rare earth element praseodymium-doped indium tin zinc oxide semiconductor is used as the channel layer of the thin film transistor, and the aluminum oxide-based wet back channel etched thin film transistor is successfully prepared. The effect of N 2O plasma treatment on the back-channel interface of thin film transistor is studied, and the effect of treatment power and time on device performance are studied in detail. The results show that the good device performance can be obtained under certain power and time treatment, and the prepared device has good thermal stability of positive bias and negative bias under light conditions. The results from high-resolution transmission electron microscopy show that the amorphous structure of the metal oxide semiconductor material can effectively resist the wet etchant, and that no obvious component segregation phenomenon is found. Further, X-ray photoelectric spectroscopy tests show that N 2O plasma treatment can form an oxygen-rich, low-carrier-concentration interface layer at the interface. On the one hand, it can effectively resist the damage of the back channel caused by the plasma of plasma enhanced chemical vapor deposition (PECVD), and on the other hand, it acts as a passivation body of hydrogen from PECVD plasma, suppressing the generation of low-level donor state of hydrogen. This study provides an important reference for low-cost, high-efficiency thin film transistor performance optimization methods.

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Kagilik, Ahmed. "Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing." Solar Energy and Sustainable Development Journal 3, no. 1 (December 31, 2014): 38–50. http://dx.doi.org/10.51646/jsesd.v3i1.87.

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As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass (PSG) layer removal using Trifuormethane /Sulfur Hexafuoride (CHF 3/SF6) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. T e dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer f lm which is formed during the PSG etching using both oxygen and hydrogen gases.By applying an additional cleaning step, the polymer film is deposited on the silicon wafer surface after PSG etching is eliminated. T e effect of different plasma cleaning conditions on solar cell performance is investigated. Af er optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6 % absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O2/H2 post cleaning treatment

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Poonthong, Wittawat, Narong Mungkung, Somchai Arunrungrusmi, Toshifumi Yuji, and Youl-Moon Sung. "High Performance of IZO Coated on PET Substrate for Electroluminescence Device Using Oxygen Plasma Treatment." International Journal of Photoenergy 2021 (June 11, 2021): 1–9. http://dx.doi.org/10.1155/2021/8889002.

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Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity ( 2.83 × 10 − 3 Ω · cm ), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration ( 4.93 × 10 21 c m − 3 ) and hall mobility (42.12 cm2/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m2 and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.

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Song, Jeom Sik, Sukmin Lee, Seong Hee Jung, Gook Chan Cha, and Mu Seong Mun. "Improved biocompatibility of parylene-C films prepared by chemical vapor deposition and the subsequent plasma treatment." Journal of Applied Polymer Science 112, no. 6 (June 15, 2009): 3677–85. http://dx.doi.org/10.1002/app.29774.

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Xu, Liyun, Yuling Lai, Liu Liu, Lili Yang, Ying Guo, Xijiang Chang, Jianjun Shi, Ruiyun Zhang, and Jianyong Yu. "The Effect of Plasma Electron Temperature on the Surface Properties of Super-Hydrophobic Cotton Fabrics." Coatings 10, no. 2 (February 10, 2020): 160. http://dx.doi.org/10.3390/coatings10020160.

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The existing coating systems used for the preparation of super-hydrophobic surfaces are facing new challenges because the use of organic solvents and long-carbon-chain organic fluorine monomers is banned. In this article, the authors have proven that by using inductively coupled plasma-enhanced chemical vapor deposition (PECVD) with argon (Ar), which is a completely dry process, lauryl methacrylate (LMA) can produce a stable super-hydrophobic coating effect. The effect of electron temperature on the super-hydrophobicity of cotton fabrics is investigated in terms of water repellency, chemical composition, and surface morphology. It is found that the improvement in the hydrophobicity of cotton fabric is attributed to the deposition of alkyl and ester groups, and the formation of a micro–nano-structure on the surface of the fabric after plasma treatment. The electron temperature plays an important role in achieving the super-hydrophobicity of cotton fabrics. The plasma-enhanced coating may offer a safe and dry super-hydrophobic technique with diverse applications.

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Tupinambá, Rogerio Amaral, Cristiane Aparecida de Assis Claro, Cristiane Aparecida Pereira, Celestino José Prudente Nobrega, and Ana Paula Rosifini Alves Claro. "Bacterial adhesion on conventional and self-ligating metallic brackets after surface treatment with plasma-polymerized hexamethyldisiloxane." Dental Press Journal of Orthodontics 22, no. 4 (August 2017): 77–85. http://dx.doi.org/10.1590/2177-6709.22.4.077-085.oar.

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ABSTRACT Introduction: Plasma-polymerized film deposition was created to modify metallic orthodontic brackets surface properties in order to inhibit bacterial adhesion. Methods: Hexamethyldisiloxane (HMDSO) polymer films were deposited on conventional (n = 10) and self-ligating (n = 10) stainless steel orthodontic brackets using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) radio frequency technique. The samples were divided into two groups according to the kind of bracket and two subgroups after surface treatment. Scanning Electron Microscopy (SEM) analysis was performed to assess the presence of bacterial adhesion over samples surfaces (slot and wings region) and film layer integrity. Surface roughness was assessed by Confocal Interferometry (CI) and surface wettability, by goniometry. For bacterial adhesion analysis, samples were exposed for 72 hours to a Streptococcus mutans solution for biofilm formation. The values obtained for surface roughness were analyzed using the Mann-Whitney test while biofilm adhesion were assessed by Kruskal-Wallis and SNK test. Results: Significant statistical differences (p< 0.05) for surface roughness and bacterial adhesion reduction were observed on conventional brackets after surface treatment and between conventional and self-ligating brackets; no significant statistical differences were observed between self-ligating groups (p> 0.05). Conclusion: Plasma-polymerized film deposition was only effective on reducing surface roughness and bacterial adhesion in conventional brackets. It was also noted that conventional brackets showed lower biofilm adhesion than self-ligating brackets despite the absence of film.

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Gao, Xiaohui, Hui Guo, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng. "Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric." Micromachines 13, no. 9 (August 26, 2022): 1396. http://dx.doi.org/10.3390/mi13091396.

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In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH3 flow during the deposition of SiNx can significantly affect the performances of metal–insulator–semiconductor (MIS) HEMTs. Compared to that without using NH3 flow, the device with the optimized NH3 flow exhibited three orders of magnitude lower gate leakage current, two orders of magnitude higher ON/OF drain current ratio, and an increased breakdown field by 69%. In addition, an in situ N2 plasma surface treatment prepared prior to SiNx deposition can further improve DC performances of MIS-HEMTs to a very low gate leakage current of 10−9 mA/mm and a high ON/OFF drain current ratio up to 109 by reducing the interface state density. These results demonstrate the great potential for using PECVD-SiNx as a gate dielectric in GaN-based MIS-HEMTs.

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Bita, Bogdan, Sorin Vizireanu, Daniel Stoica, Valentin Ion, Sasa Yehia, Adrian Radu, Sorina Iftimie, and Gheorghe Dinescu. "On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition." Journal of Nanomaterials 2020 (October 1, 2020): 1–6. http://dx.doi.org/10.1155/2020/8814459.

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In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N2) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D′-band, 2D-band, and D+G-band. The average values of the electrical resistance of fabricated samples were evaluated by current-voltage characteristics acquired at room temperature, in the ranges of 0 V–0.2 V, and an increase was noticed with about 50% after the Ar/N2 postsynthesis plasma treatment compared to pristine samples. Moreover, the Hall measurements proved that the obtained CNW structures had p-type conductivity (Hall coefficient was 0.206 m3/C), and the concentration of charge carriers was 7.8×1019 cm-3, at room temperature.

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Xu, Liyun, Jiawen Deng, Ying Guo, Wei Wang, Ruiyun Zhang, and Jianyong Yu. "Fabrication of super-hydrophobic cotton fabric by low-pressure plasma-enhanced chemical vapor deposition." Textile Research Journal 89, no. 10 (June 13, 2018): 1853–62. http://dx.doi.org/10.1177/0040517518780000.

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In this paper, a super-hydrophobic cotton fabric was fabricated by low-pressure plasma-enhanced chemical vapor enhanced deposition (LP-PECVD) with lauryl methacrylate (LMA) as the functional monomer. Scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray photoelectron spectroscopy were used to analyze the changes of surface morphology and chemical composition of the cotton fabrics surface, respectively. A randomly wrinkled morphology was exhibited by SEM and AFM. The combination of the low surface energy film of LMA and micro-nano-scale structure resulted in the super-hydrophobicity of modified cotton fabrics. The reactive species in LMA/Ar plasma were studied by optical emission spectroscopy, and based on the results of the test, the reaction principle in the plasma reaction chamber was discussed. It was proved that the LMA film is polymerized by chemical bonds on the surface of cotton fibers. The water repellency, washing stability, water-vapor transmission, air permeability and tensile property of fabrics were also discussed. We found that a washing-stable and breathable super-hydrophobic cotton fabric can be achieved after treatment without decreasing the tensile property.

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Santhosh, Neelakandan M., Aswathy Vasudevan, Andrea Jurov, Gregor Filipič, Janez Zavašnik, and Uroš Cvelbar. "Oriented Carbon Nanostructures from Plasma Reformed Resorcinol-Formaldehyde Polymer Gels for Gas Sensor Applications." Nanomaterials 10, no. 9 (August 29, 2020): 1704. http://dx.doi.org/10.3390/nano10091704.

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Oriented carbon nanostructures (OCNs) with dominant graphitic characteristics have attracted research interest for various applications due to the excellent electrical and optical properties owing to their vertical orientation, interconnected structures, electronic properties, and large surface area. Plasma enhanced chemical vapor deposition (PECVD) is considered as a promising method for the large-scale synthesis of OCNs. Alternatively, structural reformation of natural carbon precursor or phenol-based polymers using plasma-assisted surface treatment is also considered for the fabrication of OCNs. In this work, we have demonstrated a fast technique for the synthesis of OCNs by plasma-assisted structure reformation of resorcinol-formaldehyde (RF) polymer gels using radio-frequency inductively coupled plasma (rf-ICP). A thin layer of RF polymer gel cast on a glass substrate was used as the carbon source and treated with rf plasma under different plasma discharge conditions. Argon and hydrogen gases were used in surface treatment, and the growth of carbon nanostructures at different discharge parameters was systematically examined. This study explored the influence of the gas flow rate, the plasma power, and the treatment time on the structural reformation of polymer gel to produce OCNs. Moreover, the gas-sensing properties of as-prepared OCNs towards ethanol at atmospheric conditions were also investigated.

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Camacho, Melissa Angelica C., and Henry J. Ramos. "Comparative Analysis of the Surface Functionalization and Texturization of HDPE after H₂ and O₂ Ion Plasma Immersion." Advanced Materials Research 664 (February 2013): 768–73. http://dx.doi.org/10.4028/www.scientific.net/amr.664.768.

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An in-house constructed Plasma Enhanced Chemical Vapor Deposition (PECVD) facility was used in this study to facilitate the surface chemistry improvement on High Density Polyethylene (HDPE) sheets and allow an increase in adhesion of copper thin films on HDPE sheets. The material’s wet ability and polymer-metal adhesive strength are compared before and after plasma treatment to understand the creation and rearrangement of the functional groups present on the surface of H2 and O2 ion irradiated HDPE sheets. Results showed the detection of O-H, C≡C, C═C and C-O bonds on the surface of the irradiated samples. H2 ion irradiated sheets, however, showed no surface chemical functionality changes.

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Rubanik, V. V., D. A. Bahrets, V. V. Rubanik jr., V. I. Urban, A. N. Uzhekina, and V. G. Dorodeiko. "Setting the functional properties of TiNi alloys during ion-plasma coating deposition process." Doklady of the National Academy of Sciences of Belarus 65, no. 1 (February 25, 2021): 119–28. http://dx.doi.org/10.29235/1561-8323-2021-65-1-119-128.

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The aim of the present work is to study the influence of the technological parameters of the ion-plasma treatment (IPT) on the functional properties of a TiNi shape memory alloy and its biocompatibility. The object of the study was the Ti–50.8 at. % Ni alloy, widely applied in medical devices. IPT was carried out by vacuum-arc evaporation of a titanium cathode at different values of the bias potential (0, –100, and –500 V), followed by TiN deposition. The functional properties of the TiNi alloy after IPT were investigated using differential scanning calorimetry. The biocompatible properties were evaluated using atomic emission spectrometry to measure a nickel concentration after one year holding TiN-coated TiNi samples in the 0.9 % NaCl solution. It has been determined that by setting the temperature regime of heating of Ti–50.8 at. % Ni alloy samples due to the technological parameters of the IPT process, it is possible to change the interval of realization of thermoelastic martensitic transformations, and, consequently, the temperature response of devices made of this alloy, i. e. to set the necessary functional properties. The comparative analysis of the characteristic temperatures after heat and ion-plasma treatments allow us to conclude that the proposed method for calculation of the TiNi substrate temperature is correct at IPT. The calculated temperature of the TiNi samples was ~275 °C at the zero potential, which is sufficient to shift the characteristic temperatures of the alloy. The substrate temperature during deposition was ~400 °C at a – 100 V bias and above 600 °C at a – 500 V bias, respectively. The Ni concentration in the model solution did not exceed 0.14 mg/l after one year holding, which indicates the high biocompatibility of the TiN-coated TiNi samples.

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Laourine, Feriel, Franck Cleymand, Grégory Marcos, Stéphane Guilet, and Thierry Czerwiec. "AFM Measurements of the Deformation Kinetics of Silica Oxide Dots Deposited on a Sequentially Nitrided Stainless Steel." Key Engineering Materials 813 (July 2019): 273–78. http://dx.doi.org/10.4028/www.scientific.net/kem.813.273.

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In this paper, we present the results of plasma nitriding treatments on austenitic stainless steel substrates previously coated with a patterned silicon oxide layer. For this purpose, masks were made by PECVD for the deposition of a silicon oxide layer on polished austenitic AISI 316L samples. For the final nitriding treatment, we used a multi-dipolar plasma providing independent substrate polarization. The interactions between expanded austenite and fixed silicon oxide mask in different shapes (circular and square dots) are observed by atomic force microscopy (AFM) on the same area before and after the nitriding treatment. After this thermochemical treatment, we obtain strong distortions of the dots, in particular at the edges of the larger size dots. The role of elastic deformation, due to the expanded austenitic phase formed by the diffusion of nitrogen under the mask is of primary importance.

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SHIM, J. H., K. H. HAN, M. B. PARK, and N. H. CHO. "EFFECT OF REACTION GAS ON THE STRUCTURAL AND OPTICAL FEATURES OF NC-SI:H THIN FILMS PREPARED BY PECVD." International Journal of Modern Physics B 16, no. 28n29 (November 20, 2002): 4335–38. http://dx.doi.org/10.1142/s0217979202015388.

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Hydrogenated nano-crystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD). The variation in the crystallinity, nano-structure and optical characteristics of the nc-Si:H films with deposition variables such as reaction gas, post-deposition heat-treatment and deposition time were investigated; the relationship between the optical nano-structural features of the nc-Si:H films was discussed. The intensity of the PL peak, observed at about ~ 480 nm region, increased with the amount of reaction gas as well as deposition time. On the other hand, PL peaks appear at ~ 580 nm region when the sample was annealed in vacuum, and the intensity of the peaks increased with increasing the annealing time. It's believed that radiative recombination occurred due to the defects of SiO x in the film.

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MAHAPATRA, OJAS, R. MAHESWARAN, N. SATYA VIJAYA KUMAR, K. R. GANESH, C. GOPALAKRISHNAN, D. JOHN THIRUVADIGAL, and S. V. KASMIR RAJA. "EFFECT OF TEMPERATURE ON SELF-ASSEMBLY OF DIAMOND-LIKE CARBON (DLC) GROWN BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)." Surface Review and Letters 16, no. 03 (June 2009): 337–41. http://dx.doi.org/10.1142/s0218625x09012688.

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Diamond-like carbon nanostructures were prepared using Plasma enhanced chemical vapor deposition (PECVD). Temperature dependence of self-assembly of carbon nanostructures is noted. Carbon and silicon exhibit significant lattice mismatch and during the self-assembly, stacking of carbon atoms takes place which results in conic projections. The carbon nanostructures were prepared at 600°C and 100 W RF power and were subjected to a cooling treatment. Argon and Methane were used as reactant gases. The formation of nanostructures did not use any catalyst. The surface morphology and roughness analysis was carried by Atomic Force microscopy. The nanocones were characterized by X Ray Diffractometer and Raman Spectroscopy.

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Park, Yoonsoo, Hyuna Lim, Sungyool Kwon, Younghyun Kim, Wonjin Ban, and Donggeun Jung. "Effects of He/H2 Plasma Treatment on Properties of SiCOH Films Deposited with the 1,1,1,3,5,7,7,7- Octamethyl-3,5-Bis(Trimethylsiloxy) Tetrasiloxane Precursor." Journal of Nanoscience and Nanotechnology 20, no. 11 (November 1, 2020): 6706–12. http://dx.doi.org/10.1166/jnn.2020.18785.

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Low-dielectric-constant SiCOH films fabricated using plasma enhanced chemical vapor deposition (PECVD) are widely used as inter-metallic dielectric (IMD) layers in interconnects of semiconductor chips. In this work, SiCOH films were deposited with 1,1,1,3,5,7,7,7-octamethyl-3,5-bis(trimethylsiloxy)tetrasiloxane (OMBTSTS), and plasma treatment was performed by an inductively coupled plasma (ICP) system with mixture of He and H2. The values of relative dielectric constant (k) of the as-deposited SiCOH films ranged from 2.64 to 4.19. The He/H2 plasma treatment led to a reduction of the k values of the SiCOH films from 2.64–4.19 to 2.07–3.94. To investigate the impacts of the He/H2 plasma treatment on the SiCOH films, the chemical compositions and structures of the as-deposited and treated the SiCOH films were compared by Fourier transform infrared spectroscopy. The experimental results indicate that the k value of the SiCOH films was decreased, there was a proportional increase in pore-related Si–O–Si structure, which is commonly called the cage structure with lager angle than 144°, after He/H2 plasma treatment. The He/H2 plasma treatment was considered to have reduced the k value by forming pores that could be represented by the cage structure. On the other hand, the leakage current density of the SiCOH films was slightly degraded by He/H2 plasma treatment, however, this was tolerable for IMD application. Concludingly the He/H2 plasma treated SiCOH film has the lowest relative dielectric constant (k~2.08) when the most highly hydrocarbon removal and cage structure formation increased.

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Santhosh, Neelakandan, Gregor Filipič, Elena Tatarova, Oleg Baranov, Hiroki Kondo, Makoto Sekine, Masaru Hori, Kostya Ostrikov, and Uroš Cvelbar. "Oriented Carbon Nanostructures by Plasma Processing: Recent Advances and Future Challenges." Micromachines 9, no. 11 (November 1, 2018): 565. http://dx.doi.org/10.3390/mi9110565.

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Carbon, one of the most abundant materials, is very attractive for many applications because it exists in a variety of forms based on dimensions, such as zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), and-three dimensional (3D). Carbon nanowall (CNW) is a vertically-oriented 2D form of a graphene-like structure with open boundaries, sharp edges, nonstacking morphology, large interlayer spacing, and a huge surface area. Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the large-scale synthesis and functionalization of carbon nanowalls (CNWs) with different types of plasma activation. Plasma-enhanced techniques open up possibilities to improve the structure and morphology of CNWs by controlling the plasma discharge parameters. Plasma-assisted surface treatment on CNWs improves their stability against structural degradation and surface chemistry with enhanced electrical and chemical properties. These advantages broaden the applications of CNWs in electrochemical energy storage devices, catalysis, and electronic devices and sensing devices to extremely thin black body coatings. However, the controlled growth of CNWs for specific applications remains a challenge. In these aspects, this review discusses the growth of CNWs using different plasma activation, the influence of various plasma-discharge parameters, and plasma-assisted surface treatment techniques for tailoring the properties of CNWs. The challenges and possibilities of CNW-related research are also discussed.

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Wu, Chien-Hung, Shuo-Yen Lin, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, and Yi-Jie Wang. "Electrical Characteristics of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium-Gallium-Zinc-Oxide Thin-Film Transistors with In-Situ Hydrogenation and Neutral Beam Oxidation." Journal of Nanoelectronics and Optoelectronics 17, no. 12 (December 1, 2022): 1548–53. http://dx.doi.org/10.1166/jno.2022.3341.

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Low temperature poly-crystalline silicon thin-film transistors (LTPS-TFTs) and indium-gallium-zinc-oxide TFTs (IGZO-TFTs) are potential candidates for future technology of various displays. Due to its simple manufacturing process, low cost and good uniformity, IGZO-TFTs have been developed as main stream display technology. From the viewpoint of device electrical characteristics, a-IGZO TFTs have better field-effect mobility (>10 cm2/V * s), larger Ion/Ioff ratio (>106), smaller subthreshold swing (S.S) and good stability. In this study, atmospheric-pressure PECVD (AP-PECVD) is used to deposit a-IGZO active layer, during the deposition process In-Situ hydrogenation is applied to enhance the layer characteristics. Also, the layer is then surface oxidation treated by neutral beam system (NBS). The optimal TFTs device characteristics is reached with In-Situ hydrogenation of H2 90 sccm, and surface oxidation of 400 W NBS treatment. The field-effect mobility is 34.05 cm2/V * s, threshold voltage is 1.74 V, subthreshold swing is 62 mV/decade, and current ratio Ion/Ioff is 2.04×107. Compared with conventional plasma, NBS used in this study provides charge-free plasma which could enhance device electric characteristics.

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Kim, Il, Jong-Seok Kim, Bok-Won Cho, Sung-Duck Ahn, John S. Chun, and Won-Jong Lee. "Effects of deposition temperature on the electrical properties of electron cyclotron resonance plasma-enhanced chemical vapor deposition Ta2O5 film and the formation of interfacial SiO2." Journal of Materials Research 10, no. 11 (November 1995): 2864–69. http://dx.doi.org/10.1557/jmr.1995.2864.

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High-quality Ta2O5 thin films for high-density memory devices were prepared at low temperatures by electron cyclotron resonance plasma-enhanced chemical vapor depostion (ECR-PECVD) without postannealing treatment. The effects of deposition temperature on the microstructure, composition, and electrical properties of the dielectric films were studied. The increase in deposition temperature from 145 °C to 205 °C improved the stoichiometry of the Ta2O5 thin films. As a consequence, EBD increased from 3.3 MV/cm to 4.4 MV/cm, and ∊Ta2O5, increased from 14 to 25. Interfacial SiO2 layer was observed by cross-sectional TEM, and its effects on the electrical properties of the overall dielectric film were also studied. The incubation period in which interfacial SiO2 grows was discussed with regard to reactivity between oxygen and Si substrate.

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Lin, Chao-Wei, and Hsien-Chin Chiu. "GaN-Based High-kPraseodymium Oxide Gate MISFETs withP2S5/(NH4)2SX+ UV Interface Treatment Technology." Active and Passive Electronic Components 2012 (2012): 1–10. http://dx.doi.org/10.1155/2012/459043.

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This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX+ ultraviolet (UV) illumination. An electron-beam evaporated Pr2O3insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD), in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH4)2SXsolution and UV illumination before the gate insulator (Pr2O3) is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH4)2SXpretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm) are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3and high-kAlGaN/GaN MIS-HEMTs, with P2S5/(NH4)2SX+ UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

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Chen, Ko Shao, Su Chen Chen, Yi Chun Yeh, Wei Cheng Lien, Hong Ru Lin, and Jen Ming Yang. "The Study of Immobilization Thermal-Sensitive Hydrogel onto ePTFE Film Use the Cold Plasma and Photo-Grafting Technique." Advanced Materials Research 15-17 (February 2006): 187–92. http://dx.doi.org/10.4028/www.scientific.net/amr.15-17.187.

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Expanded polytetrafluoroethylene (ePTFE) is a bioinert material. To improve the ePTFE film biocompatibility, the cold plasma technology was used with acetic acid as monomer to deposit onto ePTFE film and then (N-isopropylacrylamide) was grafted onto the surface by photo-grafting. The characteristics of the surface were evaluated with X-ray photoelectron spectroscopy (XPS), FTIR and water contact angle. It was found that the contact angle of water on the untreated ePTFE significantly decrease from125° to 72° after ePTFE film being treated with acetic acid plasma deposition treatment. Due to the hydrophilicity of poly(N-isopropylacrylamide), the contact angle of water on the ePTFE-g-NIPAAm approached to 0°.

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Kylián, Ondřej. "(Invited) Atmospheric Pressure Plasma Treatment of Materials." ECS Meeting Abstracts MA2022-02, no. 19 (October 9, 2022): 886. http://dx.doi.org/10.1149/ma2022-0219886mtgabs.

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Technologies based on the use of non-equilibrium plasmas have become virtually irreplaceable in diverse application fields. These range from modification/functionalization of surfaces of medical implants, production of functional thin films or nanostructured materials, light generation, environmental remediation, ozone generation or sterilization/decontamination of surfaces. However, there is a clear trend in the last few decades to substitute low-pressure plasma systems with the ones operated at atmospheric pressure. The interest in atmospheric pressure plasmas is stimulated not only by the decrease in equipment costs by avoiding expensive pumping systems of conventional low-pressure plasma devices but also by the possibility to process objects non-compatible with vacuum conditions. The latter triggered off rapid development of brand new scientific fields – plasma medicine and plasma agriculture. In this work, we briefly review the main operational principles of atmospheric pressure plasma sources, as well as the advantages/drawbacks of atmospheric plasma for a better understanding of the capabilities and limitations of the atmospheric plasma processing technology compared with conventional low-pressure plasma processing technologies. Subsequently, the possible use of two common atmospheric pressure plasma systems - dielectric barrier discharges and atmospheric pressure jets - will be demonstrated on the selected examples. The main emphasis will be given to the issues connected with the control of the wetting/drying/condensation of liquids on plasma-treated polymers, use of plasma pre-treatment on metallization of surfaces or their improved biocompatibility, application of atmospheric pressure plasma for deposition of nanostructured thin films, treatment of seeds with an aim to improve their germination, and last, but not least, the attention will also be devoted to the removal of organic deposits/contaminants, including pathogens, from different types of surfaces. References: [1] Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H. Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air. J. Phys. D Appl. Phys. 2017, 50, 135201. [2] Khomiakova, N.; Hanuš, J.; Kuzminova, A.; Kylián, O. Investigation of Wettability, Drying and Water Condensation on Polyimide (Kapton) Films Treated by Atmospheric Pressure Air Dielectric Barrier Discharge. Coatings 2020, 10, 619. [3] Homola, T.; Prukner, V.; Artemenko, A.; Hanus, J.; Kylian, O.; Simek, M. Direct treatment of pepper (Capsicum annuum L.) and melon (Cucumis melo) seeds by amplitude-modulated dielectric barrier discharge in air. Journal of Applied Physics 2021, 129, 193303. [4] Bilek, M.M.M.; Vandrovcová, M.; Shelemin, A.; Kuzminova, A.; Kylián, O.; Biederman, H.; Bačáková, L.; Weiss, A.S. Plasma treatment in air at atmospheric pressure that enables reagent-free covalent immobilization of biomolecules on polytetraﬂuoroethylene (PTFE). Appl. Surf. Sci. 2020, 518, 146128. This work was partly supported by the grant GAČR 21-05030K financed by the Czech Science Foundation. Figure 1

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Park, Hyun-Chul, Jaeyoung Ryu, Seunggon Jung, Hong-Ju Park, Hee-Kyun Oh, and Min-Suk Kook. "Effect of Hydroxyapatite Nanoparticles and Nitrogen Plasma Treatment on Osteoblast Biological Behaviors of 3D-Printed HDPE Scaffold for Bone Tissue Regeneration Applications." Materials 15, no. 3 (January 21, 2022): 827. http://dx.doi.org/10.3390/ma15030827.

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The need for the repair of bone defects has been increasing due to various causes of loss of skeletal tissue. High density polyethylenes (HDPE) have been used as bone substitutes due to their excellent biocompatibility and mechanical strength. In the present study, we investigated the preosteoblast cell proliferation and differentiation on the adding nano-hydroxyapatite (n-HAp) particles into HDPE scaffold and treating HDPE/n-HAp scaffolds with nitrogen (N2) plasma. The three-dimensional (3D) HDPE/n-HAp scaffolds were prepared by fused modeling deposition 3D printer. The HDPE/n-HAp was blended with 10 wt% of n-HAp particle. The scaffold surface was reactive ion etched with nitrogen plasma to improve the preosteoblast biological response in vitro. After N2 plasma treatment, surfaces characterizations were investigated using Fourier transform infrared spectroscopy, scanning electron microscopy, and atomic force microscopy. The proliferation and differentiation of preosteoblast (MC3T3-E1) cells were evaluated by MTT assay and alkaline phosphatase (ALP) activity. The incorporation of n-HAp particles and N2 plasma surface treatment showed the improvement of biological responses of MC3T3-E1 cells in the HDPE scaffolds.

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Journal articles on the topic 'Plasma treatment, PECVD, plasma deposition, biocompatibility'

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