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Journal articles on the topic 'Plasma immersion ion implantation'

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Published: 4 June 2021
Last updated: 25 May 2024

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1

Mantese, Joseph V., Ian G. Brown, Nathan W. Cheung, and George A. Collins. "Plasma-Immersion Ion Implantation." MRS Bulletin 21, no. 8 (August 1996): 52–56. http://dx.doi.org/10.1557/s0883769400035727.

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Plasma-immersion ion implantation (PIII) is an emerging technology for the surface engineering of semiconductors, metals, and dielectrics. It is inherently a batch-processable technique that lends itself to the implantation of large numbers of parts simultaneously. It thus offers the possibility of introducing ion implantation into manufacturing processes that have not traditionally been feasible using conventional implantation.In PIII the part to be treated is placed in a vacuum chamber in which is generated a plasma containing the ions of the species to be implanted. The plasma based implantation system does not use the extraction and acceleration methods of conventional mass-analyzing implanters. Instead the sample is (usually) repetitively pulsed at high negative voltages (in the 2–300 kV range) to implant the surface with a flux of energetic plasma ions as shown in Figure 1. When the negative bias is applied to a conducting object immersed in a plasma, electrons are repelled from the surrounding region toward the walls of the vacuum chamber, which is usually held at ground potential. Almost all the applied voltage difference occurs across this region, which is generally known as a sheath or cathode fall region. Ions are accelerated across the sheath, producing an ion flux to the entire exposed surface of the work-piece. Because the plasma surrounds the sample and because the ions are accelerated normal to the sample surfaces, implantation occurs over all surfaces, thereby eliminating the need for elaborate target manipulation or masking systems commonly required for beam line implanters. Ions implanted in the work-piece must be replaced by an incoming flow of ions at the sheath boundary, or the sheath will continue to expand into the surrounding plasma.Plasma densities are kept relatively low, usually between 108 and 1011 ions per cm3. Ions must be replenished near the workpiece by either diffusion or ionization since the workpiece (in effect) behaves like an ion pump. Gaseous discharges with thermionic, radio-frequency, or microwave ionization sources have been successfully used.Surface-enhanced materials are obtained through PIII by producing chemical and microstructural changes that lead to altered electrical properties (e.g., semiconductor applications), and low-friction and superhard surfaces that are wear- and corrosion-resistant. When PIII is limited to gaseous implant species, these unique surface properties are obtained primarily through the formation of nitrides, oxides, and carbides. When applied to semiconductor applications PIII can be used to form amorphous and electrically doped layers. Plasma-immersion ion implantation can also be combined with plasma-deposition techniques to produce coatings such as diamondlike carbon (DLC) having enhanced properties. This latter variation of PIII can be operated in a high ionenergy regime so as to do ion mixing and to form highly adherent films, and in an ion-beam-assisted-deposition (IBAD)-like ion-energy regime to produce good film morphology and structure.
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2

Thomae, Rainer W. "Plasma-immersion ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 139, no. 1-4 (April 1998): 37–42. http://dx.doi.org/10.1016/s0168-583x(97)00952-x.

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3

MIREAULT, N., and G. G. ROSS. "MODIFICATION OF WETTING PROPERTIES OF PMMA BY IMMERSION PLASMA ION IMPLANTATION." Surface Review and Letters 15, no. 04 (August 2008): 345–54. http://dx.doi.org/10.1142/s0218625x08011470.

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Advancing and receding contact angles below 5° have been obtained on PMMA surfaces with the implantation of argon and oxygen ions. The ion implantations were performed by means of the Immersion Plasma Ion Implantation (IPII) technique, a hybrid between ion beams and immersion plasmas. Characterization of treated PMMA surfaces by means of XPS and its combination with chemical derivatization (CD-XPS) have revealed the depletion of oxygen and the creation of dangling bonds, together with the formation of new chemical functions such as –OOH , –COOH and C = C . These observations provide a good explanation for the strong increase of the wetting properties of the PMMA surfaces.
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4

Lieberman, M. A. "Model of plasma immersion ion implantation." Journal of Applied Physics 66, no. 7 (October 1989): 2926–29. http://dx.doi.org/10.1063/1.344172.

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5

Kondyurin, A., V. Karmanov, and R. Guenzel. "Plasma immersion ion implantation of polyethylene." Vacuum 64, no. 2 (November 2001): 105–11. http://dx.doi.org/10.1016/s0042-207x(01)00381-5.

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6

López-Callejas, R., R. Valencia-Alvarado, A. E. Muñoz-Castro, O. G. Godoy-Cabrera, and J. L. Tapia-Fabela. "Instrumentation for plasma immersion ion implantation." Review of Scientific Instruments 73, no. 12 (December 2002): 4277–82. http://dx.doi.org/10.1063/1.1517144.

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7

Collins, G. A., R. Hutchings, and J. Tendys. "Plasma immersion ion implantation of steels." Materials Science and Engineering: A 139 (July 1991): 171–78. http://dx.doi.org/10.1016/0921-5093(91)90613-r.

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8

Mändl, S., J. Brutscher, R. Günzel, and W. Möller. "Ion energy distribution in plasma immersion ion implantation." Surface and Coatings Technology 93, no. 2-3 (September 1997): 234–37. http://dx.doi.org/10.1016/s0257-8972(97)00051-0.

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9

Kenny, M. J., L. S. Wielunski, J. Tendys, and G. A. Collins. "A comparison of plasma immersion ion implantation with conventional ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (June 1993): 262–66. http://dx.doi.org/10.1016/0168-583x(93)96120-2.

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10

Yankov, Rossen A., and Stephan Mändl. "Plasma immersion ion implantation for silicon processing." Annalen der Physik 513, no. 4 (February 26, 2001): 279–98. http://dx.doi.org/10.1002/andp.20015130401.

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11

Linder, B. P., and N. W. Cheung. "Plasma immersion ion implantation with dielectric substrates." IEEE Transactions on Plasma Science 24, no. 6 (1996): 1383–88. http://dx.doi.org/10.1109/27.553205.

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12

Brutscher, Jörg, Reinhard Günzel, and Wolfhard Möller. "Sheath dynamics in plasma immersion ion implantation." Plasma Sources Science and Technology 5, no. 1 (February 1, 1996): 54–60. http://dx.doi.org/10.1088/0963-0252/5/1/007.

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13

Chen, S. M., R. M. Gwilliam, and B. J. Sealy. "Computer simulation of Plasma Immersion Ion Implantation." Radiation Effects and Defects in Solids 141, no. 1-4 (June 1997): 149–59. http://dx.doi.org/10.1080/10420159708211566.

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14

Zeng, Xuchu, Ricky K. Y. Fu, Dixon T. K. Kwok, and Paul K. Chu. "Quasi-direct current plasma immersion ion implantation." Applied Physics Letters 79, no. 19 (November 5, 2001): 3044–46. http://dx.doi.org/10.1063/1.1415404.

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15

Oliveira, R. M., M. Ueda, J. O. Rossi, B. Diaz, and K. Baba. "Plasma Immersion Ion Implantation With Lithium Atoms." IEEE Transactions on Plasma Science 36, no. 5 (October 2008): 2572–76. http://dx.doi.org/10.1109/tps.2008.2004229.

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16

Huber, P., G. Keller, J. W. Gerlach, S. Mändl, W. Assmann, and B. Rauschenbach. "Trench homogeneity in plasma immersion ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (March 2000): 1085–89. http://dx.doi.org/10.1016/s0168-583x(99)00825-3.

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17

Schiller, T. L., D. Sheeja, D. R. McKenzie, D. G. McCulloch, D. S. P. Lau, S. Burn, and B. K. Tay. "Plasma immersion ion implantation of poly(tetrafluoroethylene)." Surface and Coatings Technology 177-178 (January 2004): 483–88. http://dx.doi.org/10.1016/s0257-8972(03)00916-2.

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18

Blawert, C., and B. L. Mordike. "Industrial applications of plasma immersion ion implantation." Surface and Coatings Technology 93, no. 2-3 (September 1997): 274–79. http://dx.doi.org/10.1016/s0257-8972(97)00060-1.

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19

Möller, Wolfhard, Stefano Parascandola, Olaf Kruse, Reinhard Günzel, and Edgar Richter. "Plasma-immersion ion implantation for diffusive treatment." Surface and Coatings Technology 116-119 (September 1999): 1–10. http://dx.doi.org/10.1016/s0257-8972(99)00144-9.

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20

Cheung, Nathan W. "Processing considerations with plasma immersion ion implantation." Surface and Coatings Technology 156, no. 1-3 (July 2002): 24–30. http://dx.doi.org/10.1016/s0257-8972(02)00068-3.

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21

Kondyurin, A., P. Volodin, and J. Weber. "Plasma immersion ion implantation of Pebax polymer." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 251, no. 2 (October 2006): 407–12. http://dx.doi.org/10.1016/j.nimb.2006.06.026.

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22

Zeng, Zhaoming, Ricky K. Y. Fu, Xiubo Tian, and Paul K. Chu. "Plasma immersion ion implantation of industrial gears." Surface and Coatings Technology 186, no. 1-2 (August 2004): 260–64. http://dx.doi.org/10.1016/j.surfcoat.2004.02.048.

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23

Tian, X. B., K. Y. Fu, P. K. Chu, and S. Q. Yang. "Plasma immersion ion implantation of insulating materials." Surface and Coatings Technology 196, no. 1-3 (June 2005): 162–66. http://dx.doi.org/10.1016/j.surfcoat.2004.08.166.

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24

Ueda, M., I. H. Tan, R. S. Dallaqua, J. O. Rossi, J. J. Barroso, and M. H. Tabacniks. "Aluminum plasma immersion ion implantation in polymers." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (May 2003): 760–66. http://dx.doi.org/10.1016/s0168-583x(03)00844-9.

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25

Günzel, R., and J. Brutscher. "Sheath dynamics in plasma immersion ion implantation." Surface and Coatings Technology 85, no. 1-2 (November 1996): 98–104. http://dx.doi.org/10.1016/0257-8972(96)02883-6.

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26

Chu, Paul K. "Semiconductor applications of plasma immersion ion implantation." Plasma Physics and Controlled Fusion 45, no. 5 (March 26, 2003): 555–70. http://dx.doi.org/10.1088/0741-3335/45/5/304.

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27

Cheung, N. W. "Plasma immersion ion implantation for semiconductor processing." Materials Chemistry and Physics 46, no. 2-3 (November 1996): 132–39. http://dx.doi.org/10.1016/s0254-0584(97)80006-5.

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28

Chu, Paul K., and Nathan W. Cheung. "Microcavity engineering by plasma immersion ion implantation." Materials Chemistry and Physics 57, no. 1 (November 1998): 1–16. http://dx.doi.org/10.1016/s0254-0584(98)00211-9.

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29

Ensinger, W. "Semiconductor processing by plasma immersion ion implantation." Materials Science and Engineering: A 253, no. 1-2 (September 1998): 258–68. http://dx.doi.org/10.1016/s0921-5093(98)00734-5.

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30

Jones, Erin C., Barry P. Linder, and Nathan W. Cheung. "Plasma Immersion Ion Implantation for Electronic Materials." Japanese Journal of Applied Physics 35, Part 1, No. 2B (February 28, 1996): 1027–36. http://dx.doi.org/10.1143/jjap.35.1027.

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31

Cheung, Nathan W. "Plasma immersion ion implantation for ULSI processing." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55, no. 1-4 (April 1991): 811–20. http://dx.doi.org/10.1016/0168-583x(91)96285-s.

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32

Yankov, Rossen A., and Stephan Mändl. "Plasma immersion ion implantation for silicon processing." Annalen der Physik 10, no. 4 (April 2001): 279–98. http://dx.doi.org/10.1002/1521-3889(200104)10:4<279::aid-andp279>3.0.co;2-r.

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33

Chu, Paul K. "Progress in direct-current plasma immersion ion implantation and recent applications of plasma immersion ion implantation and deposition." Surface and Coatings Technology 229 (August 2013): 2–11. http://dx.doi.org/10.1016/j.surfcoat.2012.03.073.

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34

Collins, G. A., R. Hutchings, K. T. Short, and J. Tendys. "Ion-assisted surface modification by plasma immersion ion implantation." Surface and Coatings Technology 103-104 (May 1998): 212–17. http://dx.doi.org/10.1016/s0257-8972(98)00395-8.

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35

Tian, X. B., and Paul K. Chu. "Multiple ion-focusing effects in plasma immersion ion implantation." Applied Physics Letters 81, no. 20 (November 11, 2002): 3744–46. http://dx.doi.org/10.1063/1.1520716.

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36

Cheng-Sen, Liu, Wang De-Zhen, Fan Yu-Jia, Zhang Nan, Guan Li, and Yao Yuan. "Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation." Chinese Physics Letters 27, no. 7 (July 2010): 075201. http://dx.doi.org/10.1088/0256-307x/27/7/075201.

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37

Qian, X. Y., N. W. Cheung, M. A. Lieberman, R. Brennan, M. I. Current, and N. Jha. "Conformal implantation for trench doping with plasma immersion ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55, no. 1-4 (April 1991): 898–901. http://dx.doi.org/10.1016/0168-583x(91)96303-3.

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38

Zhi-Neng Fan, Qing-Chuan Chen, P. K. Chu, and Chung Chan. "Low pressure plasma immersion ion implantation of silicon." IEEE Transactions on Plasma Science 26, no. 6 (1998): 1661–68. http://dx.doi.org/10.1109/27.747884.

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39

Chen, S. M., R. M. Gwilliam, and B. J. Sealy. "MOS device fabrication via plasma immersion ion implantation." Solid-State Electronics 41, no. 4 (April 1997): 535–37. http://dx.doi.org/10.1016/s0038-1101(96)00218-3.

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40

Tan, I. H., M. Ueda, R. S. Dallaqua, J. O. Rossi, A. F. Beloto, and E. Abramof. "Magnesium plasma immersion ion implantation on silicon wafers." Surface and Coatings Technology 169-170 (June 2003): 379–83. http://dx.doi.org/10.1016/s0257-8972(03)00053-7.

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41

Shao, Jiqun, Erin C. Jones, and Nathan W. Cheung. "Shallow junction formation by plasma immersion ion implantation." Surface and Coatings Technology 93, no. 2-3 (September 1997): 254–57. http://dx.doi.org/10.1016/s0257-8972(97)00055-8.

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42

Davis, J., K. Short, R. Wuhrer, M. Phillips, and K. Whittle. "Plasma Immersion Ion Implantation of Stainless Steel 316." Microscopy and Microanalysis 17, S2 (July 2011): 1886–87. http://dx.doi.org/10.1017/s1431927611010300.

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43

Thorwarth, G., S. Mändl, and B. Rauschenbach. "Plasma immersion ion implantation of cold-work steel." Surface and Coatings Technology 125, no. 1-3 (March 2000): 94–99. http://dx.doi.org/10.1016/s0257-8972(99)00605-2.

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44

Mändl, S., D. Krause, G. Thorwarth, R. Sader, F. Zeilhofer, H. H. Horch, and B. Rauschenbach. "Plasma immersion ion implantation treatment of medical implants." Surface and Coatings Technology 142-144 (July 2001): 1046–50. http://dx.doi.org/10.1016/s0257-8972(01)01066-0.

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45

Mändl, Stephan, and Darina Manova. "Modification of metals by plasma immersion ion implantation." Surface and Coatings Technology 365 (May 2019): 83–93. http://dx.doi.org/10.1016/j.surfcoat.2018.04.039.

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46

Kondyurin, A., B. K. Gan, M. M. M. Bilek, D. R. McKenzie, K. Mizuno, and R. Wuhrer. "Argon plasma immersion ion implantation of polystyrene films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266, no. 7 (April 2008): 1074–84. http://dx.doi.org/10.1016/j.nimb.2008.02.063.

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47

Ueda, M., M. M. Silva, C. M. Lepienski, P. C. Soares, J. A. N. Gonçalves, and H. Reuther. "High temperature plasma immersion ion implantation of Ti6Al4V." Surface and Coatings Technology 201, no. 9-11 (February 2007): 4953–56. http://dx.doi.org/10.1016/j.surfcoat.2006.07.074.

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48

Yankov, R. A., N. Shevchenko, A. Rogozin, M. F. Maitz, E. Richter, W. Möller, A. Donchev, and M. Schütze. "Reactive plasma immersion ion implantation for surface passivation." Surface and Coatings Technology 201, no. 15 (April 2007): 6752–58. http://dx.doi.org/10.1016/j.surfcoat.2006.09.010.

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49

Valcheva, E., S. Dimitrov, D. Manova, S. Mändl, and S. Alexandrova. "AlN nanoclusters formation by plasma ion immersion implantation." Surface and Coatings Technology 202, no. 11 (February 2008): 2319–22. http://dx.doi.org/10.1016/j.surfcoat.2007.08.051.

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50

Collins, G. A., R. Hutchings, and J. Tendys. "Plasma immersion ion implantation—the role of diffusion." Surface and Coatings Technology 59, no. 1-3 (October 1993): 267–73. http://dx.doi.org/10.1016/0257-8972(93)90095-6.

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