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Journal articles on the topic "Plasma immersion ion implantation":
1
Mantese, Joseph V., Ian G. Brown, Nathan W. Cheung, and George A. Collins. "Plasma-Immersion Ion Implantation." MRS Bulletin 21, no. 8 (August 1996): 52–56. http://dx.doi.org/10.1557/s0883769400035727.
Plasma-immersion ion implantation (PIII) is an emerging technology for the surface engineering of semiconductors, metals, and dielectrics. It is inherently a batch-processable technique that lends itself to the implantation of large numbers of parts simultaneously. It thus offers the possibility of introducing ion implantation into manufacturing processes that have not traditionally been feasible using conventional implantation.In PIII the part to be treated is placed in a vacuum chamber in which is generated a plasma containing the ions of the species to be implanted. The plasma based implantation system does not use the extraction and acceleration methods of conventional mass-analyzing implanters. Instead the sample is (usually) repetitively pulsed at high negative voltages (in the 2–300 kV range) to implant the surface with a flux of energetic plasma ions as shown in Figure 1. When the negative bias is applied to a conducting object immersed in a plasma, electrons are repelled from the surrounding region toward the walls of the vacuum chamber, which is usually held at ground potential. Almost all the applied voltage difference occurs across this region, which is generally known as a sheath or cathode fall region. Ions are accelerated across the sheath, producing an ion flux to the entire exposed surface of the work-piece. Because the plasma surrounds the sample and because the ions are accelerated normal to the sample surfaces, implantation occurs over all surfaces, thereby eliminating the need for elaborate target manipulation or masking systems commonly required for beam line implanters. Ions implanted in the work-piece must be replaced by an incoming flow of ions at the sheath boundary, or the sheath will continue to expand into the surrounding plasma.Plasma densities are kept relatively low, usually between 108 and 1011 ions per cm3. Ions must be replenished near the workpiece by either diffusion or ionization since the workpiece (in effect) behaves like an ion pump. Gaseous discharges with thermionic, radio-frequency, or microwave ionization sources have been successfully used.Surface-enhanced materials are obtained through PIII by producing chemical and microstructural changes that lead to altered electrical properties (e.g., semiconductor applications), and low-friction and superhard surfaces that are wear- and corrosion-resistant. When PIII is limited to gaseous implant species, these unique surface properties are obtained primarily through the formation of nitrides, oxides, and carbides. When applied to semiconductor applications PIII can be used to form amorphous and electrically doped layers. Plasma-immersion ion implantation can also be combined with plasma-deposition techniques to produce coatings such as diamondlike carbon (DLC) having enhanced properties. This latter variation of PIII can be operated in a high ionenergy regime so as to do ion mixing and to form highly adherent films, and in an ion-beam-assisted-deposition (IBAD)-like ion-energy regime to produce good film morphology and structure.
2
Thomae, Rainer W. "Plasma-immersion ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 139, no. 1-4 (April 1998): 37–42. http://dx.doi.org/10.1016/s0168-583x(97)00952-x.
MIREAULT, N., and G. G. ROSS. "MODIFICATION OF WETTING PROPERTIES OF PMMA BY IMMERSION PLASMA ION IMPLANTATION." Surface Review and Letters 15, no. 04 (August 2008): 345–54. http://dx.doi.org/10.1142/s0218625x08011470.
Advancing and receding contact angles below 5° have been obtained on PMMA surfaces with the implantation of argon and oxygen ions. The ion implantations were performed by means of the Immersion Plasma Ion Implantation (IPII) technique, a hybrid between ion beams and immersion plasmas. Characterization of treated PMMA surfaces by means of XPS and its combination with chemical derivatization (CD-XPS) have revealed the depletion of oxygen and the creation of dangling bonds, together with the formation of new chemical functions such as –OOH , –COOH and C = C . These observations provide a good explanation for the strong increase of the wetting properties of the PMMA surfaces.
4
Lieberman, M. A. "Model of plasma immersion ion implantation." Journal of Applied Physics 66, no. 7 (October 1989): 2926–29. http://dx.doi.org/10.1063/1.344172.
Kondyurin, A., V. Karmanov, and R. Guenzel. "Plasma immersion ion implantation of polyethylene." Vacuum 64, no. 2 (November 2001): 105–11. http://dx.doi.org/10.1016/s0042-207x(01)00381-5.
López-Callejas, R., R. Valencia-Alvarado, A. E. Muñoz-Castro, O. G. Godoy-Cabrera, and J. L. Tapia-Fabela. "Instrumentation for plasma immersion ion implantation." Review of Scientific Instruments 73, no. 12 (December 2002): 4277–82. http://dx.doi.org/10.1063/1.1517144.
Collins, G. A., R. Hutchings, and J. Tendys. "Plasma immersion ion implantation of steels." Materials Science and Engineering: A 139 (July 1991): 171–78. http://dx.doi.org/10.1016/0921-5093(91)90613-r.
Mändl, S., J. Brutscher, R. Günzel, and W. Möller. "Ion energy distribution in plasma immersion ion implantation." Surface and Coatings Technology 93, no. 2-3 (September 1997): 234–37. http://dx.doi.org/10.1016/s0257-8972(97)00051-0.
Kenny, M. J., L. S. Wielunski, J. Tendys, and G. A. Collins. "A comparison of plasma immersion ion implantation with conventional ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (June 1993): 262–66. http://dx.doi.org/10.1016/0168-583x(93)96120-2.
Yankov, Rossen A., and Stephan Mändl. "Plasma immersion ion implantation for silicon processing." Annalen der Physik 513, no. 4 (February 26, 2001): 279–98. http://dx.doi.org/10.1002/andp.20015130401.
Plasma Immersion Ion Implantation has several unique advantages over conventional implantation, such as low cost, large area capability, non-line-of-sight features and high dose rate implantation. However, it is still far from use in routine production because of problems such as the ability to control the ion depth profile in targets, the ion dose and contamination. In this thesis, a PIII system has been systematically calibrated, and a computer simulation code for PIII has been developed in order to understand more clearly the physics of the PIII process and to optimise the experimental conditions. In the second part of this thesis, a new application of PIII has been explored, where the PIII technique has been used as a high dose-rate implant treatment to form amorphous silicon nitride/oxide films on both crystalline and amorphous silicon substrates. The electrical properties of these films have been characterized. It shows that low dose nitrogen/oxygen implantation leads to the modification of Schottky barrier heights or the introduction of charged defects in the materials. As the ion dose is increased, alloying effects take over, forming silicon nitride/oxide alloys. The a-SiNx:H films synthesized via PIII have electrical characteristics similar to those grown by PECVD, but a-SiOx:H has different electrical properties from a-SiNx:H.
2
Allan, Scott Young. "Ion Energy Measurements in Plasma Immersion Ion Implantation." Thesis, The University of Sydney, 2009. http://hdl.handle.net/2123/5338.
This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a metal mesh over the surface and the effects of insulator surface charging. When the pulse was applied to the RFEA, the ion flux rapidly increased above the pulse-off value and then slowly decreased during the pulse. The ion density during the pulse decreased below values measured when no pulse was applied to the RFEA. This indicates that the depletion of ions by the pulsed RFEA is greater than the generation of ions in the plasma. IEDs measured during pulse biasing showed a peak close to the maximum sheath potential energy and a spread of ions with energies between zero and the maximum ion energy. Simulations showed that the peak is produced by ions from the sheath edge directly above the RFEA inlet and that the spread of ions is produced by ions which collide in the sheath and/or arrive at the RFEA with trajectories not perpendicular to the RFEA front surface. The RFEA discriminates ions based only on the component of their velocity perpendicular to the RFEA front surface. To minimise the effects of surface charging during PIII of an insulator, a metal mesh can be placed over the insulator and pulse biased together with the object. Measurements were made with metal mesh cylinders fixed to the metal RFEA front surface. The use of a mesh gave a larger ion flux compared to the use of no mesh. The larger ion flux is attributed to the larger plasma-sheath surface area around the mesh. The measured IEDs showed a low, medium and high energy peak. Simulation results show that the high energy peak is produced by ions from the sheath above the mesh top. The low energy peak is produced by ions trapped by the space charge potential hump which forms inside the mesh. The medium energy peak is produced by ions from the sheath above the mesh corners. Simulations showed that the IED is dependent on measurement position under the mesh. To investigate the effects of insulator surface charging during PIII, IED measurements were made through an orifice cut into a Mylar insulator on the RFEA front surface. With no mesh, during the pulse, an increasing number of lower energy ions were measured. Simulation results show that this is due to the increase in the curvature of the sheath over the orifice region as the insulator potential increases due to surface charging. The surface charging observed at the insulator would reduce the average energy of ions implanted into the insulator during the pulse. Compared to the case with no mesh, the use of a mesh increases the total ion flux and the ion flux during the early stages of the pulse but does not eliminate surface charging. During the pulse, compared to the no mesh case, a larger number of lower energy ions are measured. Simulation results show that this is caused by the potential in the mesh region which affects the trajectories of ions from the sheaths above the mesh top and corners and results in more ions being measured with trajectories less than ninety degrees to the RFEA front surface.
3
Allan, Scott Young. "Ion Energy Measurements in Plasma Immersion Ion Implantation." The School of Physics. The Faculty of Science, 2009. http://hdl.handle.net/2123/5338.
Doctor of Philosophy (PhD) This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a metal mesh over the surface and the effects of insulator surface charging. When the pulse was applied to the RFEA, the ion flux rapidly increased above the pulse-off value and then slowly decreased during the pulse. The ion density during the pulse decreased below values measured when no pulse was applied to the RFEA. This indicates that the depletion of ions by the pulsed RFEA is greater than the generation of ions in the plasma. IEDs measured during pulse biasing showed a peak close to the maximum sheath potential energy and a spread of ions with energies between zero and the maximum ion energy. Simulations showed that the peak is produced by ions from the sheath edge directly above the RFEA inlet and that the spread of ions is produced by ions which collide in the sheath and/or arrive at the RFEA with trajectories not perpendicular to the RFEA front surface. The RFEA discriminates ions based only on the component of their velocity perpendicular to the RFEA front surface. To minimise the effects of surface charging during PIII of an insulator, a metal mesh can be placed over the insulator and pulse biased together with the object. Measurements were made with metal mesh cylinders fixed to the metal RFEA front surface. The use of a mesh gave a larger ion flux compared to the use of no mesh. The larger ion flux is attributed to the larger plasma-sheath surface area around the mesh. The measured IEDs showed a low, medium and high energy peak. Simulation results show that the high energy peak is produced by ions from the sheath above the mesh top. The low energy peak is produced by ions trapped by the space charge potential hump which forms inside the mesh. The medium energy peak is produced by ions from the sheath above the mesh corners. Simulations showed that the IED is dependent on measurement position under the mesh. To investigate the effects of insulator surface charging during PIII, IED measurements were made through an orifice cut into a Mylar insulator on the RFEA front surface. With no mesh, during the pulse, an increasing number of lower energy ions were measured. Simulation results show that this is due to the increase in the curvature of the sheath over the orifice region as the insulator potential increases due to surface charging. The surface charging observed at the insulator would reduce the average energy of ions implanted into the insulator during the pulse. Compared to the case with no mesh, the use of a mesh increases the total ion flux and the ion flux during the early stages of the pulse but does not eliminate surface charging. During the pulse, compared to the no mesh case, a larger number of lower energy ions are measured. Simulation results show that this is caused by the potential in the mesh region which affects the trajectories of ions from the sheaths above the mesh top and corners and results in more ions being measured with trajectories less than ninety degrees to the RFEA front surface.
4
Oates, Thomas William Henry. "Metal plasma immersion ion implantation and deposition using polymer substrates." Connect to full text, 2003. http://hdl.handle.net/2123/571.
Thesis (Ph. D.)--University of Sydney, 2004. Title from title screen (viewed 5 May 2008). Submitted in fulfilment of the requirements for the degree of Doctor of Philosophy to the School of Physics, Faculty of Science. Degree awarded 2004; thesis submitted 2003. Includes bibliographical references. Also available in print form.
5
Oates, T. W. H. "Metal plasma immersion ion implantation and deposition using polymer substrates." Thesis, The University of Sydney, 2003. http://hdl.handle.net/2123/571.
This thesis investigates the application of plasma immersion ion implantation (PIII) to polymers. PIII requires that a high negative potential be applied to the surface of the material while it is immersed in a plasma. This presents a problem for insulating materials such as polymers, since the implanting ions carry charge to the surface, resulting in a charge accumulation that effectively neutralises the applied potential. This causes the plasma sheath at the surface to collapse a short time after the potential is applied. Measurements of the sheath dynamics, including the collapsing sheath, are performed using an electric probe. The results are compared to theoretical models of the plasma sheath based on the Child-Langmuir law for high voltage sheaths. The theoretical model predicts well the sheath dynamics for conductive substrates. For insulating substrates the model can account for the experimental observations if the secondary electron coefficient is modified, justified on the basis of the poly-energetic nature of the implanting ions. If a conductive film is applied to the insulator surface the problem of charge accumulation can be avoided without compromising the effectiveness of PIII. The requirement for the film is that it be conductive, yet transparent to the incident ions. Experimental results are presented which confirm the effectiveness of the method. Theoretical estimates of the surface potential show that a film of the order of 5nm thickness can effectively circumvent the charge accumulation problem. Efforts to produce and characterise such a film form the final two chapters of this thesis. The optimal thickness is determined to be near the percolation threshold, where a marked increase in conductivity occurs. Spectroscopic ellipsometry is shown to be an excellent method to determine the film thickness and percolation threshold non-invasively. Throughout this work cathodic vacuum arcs are used to deposit thin films and as a source of metal plasmas. The design and construction of a pulsed cathodic vacuum arc forms a significant part of this thesis. Investigations of the cathode spots and power supply requirements are presented.
6
Oates, T. W. H. "Metal plasma immersion ion implantation and deposition using polymer substrates." University of Sydney. Physics, 2003. http://hdl.handle.net/2123/571.
This thesis investigates the application of plasma immersion ion implantation (PIII) to polymers. PIII requires that a high negative potential be applied to the surface of the material while it is immersed in a plasma. This presents a problem for insulating materials such as polymers, since the implanting ions carry charge to the surface, resulting in a charge accumulation that effectively neutralises the applied potential. This causes the plasma sheath at the surface to collapse a short time after the potential is applied. Measurements of the sheath dynamics, including the collapsing sheath, are performed using an electric probe. The results are compared to theoretical models of the plasma sheath based on the Child-Langmuir law for high voltage sheaths. The theoretical model predicts well the sheath dynamics for conductive substrates. For insulating substrates the model can account for the experimental observations if the secondary electron coefficient is modified, justified on the basis of the poly-energetic nature of the implanting ions. If a conductive film is applied to the insulator surface the problem of charge accumulation can be avoided without compromising the effectiveness of PIII. The requirement for the film is that it be conductive, yet transparent to the incident ions. Experimental results are presented which confirm the effectiveness of the method. Theoretical estimates of the surface potential show that a film of the order of 5nm thickness can effectively circumvent the charge accumulation problem. Efforts to produce and characterise such a film form the final two chapters of this thesis. The optimal thickness is determined to be near the percolation threshold, where a marked increase in conductivity occurs. Spectroscopic ellipsometry is shown to be an excellent method to determine the film thickness and percolation threshold non-invasively. Throughout this work cathodic vacuum arcs are used to deposit thin films and as a source of metal plasmas. The design and construction of a pulsed cathodic vacuum arc forms a significant part of this thesis. Investigations of the cathode spots and power supply requirements are presented.
7
Kosobrodova, Elena. "Plasma Immersion Ion Implanted Polymers for Antibody Microarray Applications." Thesis, The University of Sydney, 2014. http://hdl.handle.net/2123/13676.
A novel platform for protein microarrays with improved sensitivity and reproducibility was developed. Plasma immersion ion implantation (PIII) treated polycarbonate (PC) was used as a substrate for anti-cluster of differentiation (CD) antibody microarrays. Compared to the current industrial standard, nitrocellulose-coated glass slides, the novel platform requires a three times lower concentration of anti-CD antibodies to achieve an equivalent signal strength and has about two times better reproducibility and three times higher sensitivity. For the first time, an anti-CD antibody microarray was used to directly observe the reaction of living human white blood cells to foreign antibodies. It was shown that anti-CD antibody microarrays can be successfully used to test for patient specific cross-reactivity and hemotoxicity of therapeutic antibodies. To select the most suitable parameters of PIII treatment, the kinetics of free radicals formed in polystyrene (PS) during PIII treatment was studied. The rates of free radical decay were determined. Post-treatment oxidation of PIII treated PS has shown a close relationship of oxidation kinetics to the free radical kinetics. Both oxidation and hydrophobic recovery had two stages with characteristic times of several hours and several days. The time of PIII treatment of PC slides was selected taking into account protein binding capacity, wettability, surface chemistry and transparency of the PIII treated PC. The effect of untreated and PIII treated surfaces on the conformation and orientation of anti-CD34 antibody was studied. It was shown that the conformation of the antibody was better preserved on the PIII treated surface than on untreated one. Also, compared to untreated PC, a larger fraction of the antibody immobilized on PIII treated PC had an orientation optimal for antigen binding.
8
Bozkurt, Bilge. "Dynamic Ion Behavior In Plasma Source Ion Implantation." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607025/index.pdf.
The aim of this work is to analytically treat the dynamic ion behavior during the evolution of the ion matrix sheath, considering the industrial application plasma source ion implantation for both planar and cylindrical targets, and then to de-velop a code that simulates this dynamic ion behavior numerically. If the sepa-ration between the electrodes in a discharge tube is small, upon the application of a large potential between the electrodes, an ion matrix sheath is formed, which fills the whole inter-electrode space. After a short time, the ion matrix sheath starts moving towards the cathode and disappears there. Two regions are formed as the matrix sheath evolves. The potential profiles of these two regions are derived and the ion flux on the cathode is estimated. Then, by us-ing the finite-differences method, the problem is simulated numerically. It has been seen that the results of both analytical calculations and numerical simula-tions are in a good agreement.
9
Tsoutas, Kostadinos Wallach. "Towards Advanced Bionics: Plasma Immersion Ion Implantation of Conductive Polypyrrole Films." Thesis, The University of Sydney, 2019. https://hdl.handle.net/2123/22624.
This thesis investigates the use of Plasma Immersion Ion Implantation (PIII) to modify electroploymerised polypyrrole (PPy) to allow for surface covalent binding of a range of biomolecules for biofunctionalized bionic applications. Synthesis regimes were investigated, aiming to produce PPy samples with the highest degree of batch consistency, chemical homogeneity and electroactivity. Galvanostatic samples at 0.2mA proved to produce superior PPy samples. PIII of nitrogen ions into PPy was modelled using TRIM/SRIM software. The depth of the treated volume of PPy was determined, along with the understanding of the atomic cascade into the PPy substrates. The modelling suggests that PIII of PPy will create an inhomogeneous treated volume with a composition that varies with depth. Surface carbonisation will occur as hydrogen atoms are recoiled or displaced. Changes in the composition and structure of PPy was investigated with a range of analytical techniques. PIII treatment of PPy was shown to produce a carbonised layer with increased carbon saturation. A threshold treatment time of between 40-80s is shown to exist, where any additional treatment beyond this amount has minimal impact on the composition and properties of PIII treated PPy. PIII treatment was shown to produce hydrophilic surfaces as a result of atomic reorganisation. A range of biological species were shown to be able to be covalently bound to PIII treated PPy. These include the ECM proteins tropoelastin and collagen I, the bioactive enzyme horseradish peroxidase, and the tropoelastin peptide fragment Pep36. Covalent binding was confirmed via use of SDS washing procedures. Conformation of the proteins and activity of the enzyme were shown to be maintained, as an outcome of the surface energy produced from treatment. The addition of ECM proteins to the treated surface were shown to increase the proliferation and binding of human dermal fibroblasts.
10
Watkins, John H. "The application of plasma immersion ion implantation to sheep shearing combs /." Title page, contents and abstract only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09phw335.pdf.
Dearborn, Mich ). International Workshop on Plasma-Based Ion Implantation (4th 1998. Papers from the Fourth International Plasma-Based Ion Implantation Workshop: 2-4 June 1998, Dearborn, Michigan. Woodbury, NY: American Vacuum Society through the American Institute of Physics, 1999.
United States. National Aeronautics and Space Administration., ed. Plasma assisted surface coating/modification processes: An emerging technology. [Washington, D.C: National Aeronautics and Space Administration, 1987.
Wisconsin--Madison), International Workshop on Plasma-Based Ion Implantation (1st 1993 University of. Papers from the First International Workshop on Plasma-Based Ion Implantation: 4-6 August 1993, University of Wisconsin--Madison, Madison, Wisconsin. New York: Published for the American Vacuum Society by the American Institute of Physics, 1994.
Conference on Ion Implantation and Plasma Assisted Processes for Industrial Applications (1988 Atlanta, Ga.). Ion implantation and plasma assisted processes: Proceedings of the Conference on Ion Implantation and Plasma Assisted Processes for Industrial Applications, Atlanta, Georgia, 22-25 May 1988. Metals Park, Ohio: ASM International, 1988.
Hochman, Robert F., Hillary Solnick-Legg, and Keith O. Legg. Ion Implantation and Plasma Assisted Processes: Proceedings of the Conference on Ion Implantation and Plasma Assisted Processes for Industrial Appli. Asm Intl, 1989.
Papers from the First International Workshop on Plasma-Based Ion Implantation: 4-6 August 1993, University of Wisconsin--Madison, Madison, Wisconsin. Published for the American Vacuum Society by the American Institute of Physics, 1994.
Gnedenkov, S. V. Plazmennoe ėlektroliticheskoe oksidirovanie metallov i splavov v tartratsoderzhashchikh rastvorakh =: Plazma electrolitic oxidation of metal and alloys in tartrate containing electrolytes. 2008.
Book chapters on the topic "Plasma immersion ion implantation":
1
Yu, Crid, and Nathan W. Cheung. "Plasma Immersion Ion Implantation: A Perspective." In Crucial Issues in Semiconductor Materials and Processing Technologies, 245–49. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_25.
Jirásková, Y., O. Schneeweiss, V. Peřina, C. Blawert, and B. L. Mordike. "Phase Composition of Steel Surfaces after Plasma Immersion Ion Implantation." In Mössbauer Spectroscopy in Materials Science, 173–82. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4548-0_17.
Hirschmann, A. C. O., M. M. Silva, C. Moura Neto, M. Ueda, C. B. Mello, M. J. R. Barboza, and A. A. Couto. "Surface Modification of Inconel 718 Superalloy by Plasma Immersion Ion Implantation." In Superalloy 718 and Derivatives, 992–1001. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118495223.ch75.
Coeur, F., Y. Arnal, J. Pelletier, O. Lesaint, O. Maulat, and M. Roche. "Monoatomic Ion Rich DECR Plasmas for Ion Implantation by Plasma Immersion Using a New High Voltage — High Current Pulse Generator." In Advanced Technologies Based on Wave and Beam Generated Plasmas, 493–94. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-017-0633-9_32.
Uzumaki, E. T., and C. S. Lambert. "Characterization of Titanium Oxide Thin Films Produced by Plasma Immersion Ion Implantation for Biomedical Implants." In Bioceramics 20, 673–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-457-x.673.
Pakpum, C., N. Pasaja, P. Suanpoot, D. Boonyawan, P. Srisantithum, C. Silawatshananai, and Thiraphat Vilaithong. "Diamond-Like Carbon Formed by Plasma Immersion Ion Implantation and Deposition Technique on 304 Stainless Steel." In Solid State Phenomena, 129–32. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-12-4.129.
You, Y. Z., D. I. Kim, and H. G. Chun. "A study on the Surface Properties of Nitrogen Implanted H13 Steel by Plasma Immersion Ion Implantation." In Solid State Phenomena, 275–80. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-25-6.275.
Uzumaki, E. T., C. S. Lambert, W. D. Belangero, and Cecília A. C. Zavaglia. "Biocompatibility of Titanium Based Implants with Diamond-Like Carbon Coatings Produced by Plasma Immersion Ion Implantation and Deposition." In Bioceramics 20, 677–80. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-457-x.677.
Liu, Hongxi, Rong Zhou, Yehua Jiang, and Baoyin Tang. "Friction and Wear Behaviors and Rolling Contact Fatigue Life of TiN Film on Bearing Steel by Plasma Immersion Ion Implantation and Deposition Technique." In Advanced Tribology, 732–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03653-8_241.
Möller, Wolfhard. "Plasma Based Ion Implantation." In Advanced Technologies Based on Wave and Beam Generated Plasmas, 191–244. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-017-0633-9_10.
Conference papers on the topic "Plasma immersion ion implantation":
1
Oliveira, Rogerio M., Mario Ueda, Jose O. Rossi, and Beatriz L. D. Moreno. "Plasma Immersion Ion Implantation with Lithium Ions." In 2007 IEEE Pulsed Power Plasma Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4345866.
Burenkov, A., P. Pichler, J. Lorenz, Y. Spiegel, J. Duchaine, and F. Torregrosa. "Simulation of plasma immersion ion implantation." In 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2011. http://dx.doi.org/10.1109/sispad.2011.6034962.
Sakudo, N., N. Ikenaga, K. Matsui, and N. Sakumoto. "Exact ion energy in plasma immersion ion implantation." In 2015 IEEE International Conference on Plasma Sciences (ICOPS). IEEE, 2015. http://dx.doi.org/10.1109/plasma.2015.7179884.
Díaz, C., J. A. García, S. Mändl, R. Pereiro, B. Fernández, and R. J. Rodríguez. "Plasma immersion ion implantation for reducing metal ion release." In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP, 2012. http://dx.doi.org/10.1063/1.4766544.
Oliveira, R. M., M. Ueda, J. O. Rossi, and B. Diaz. "Plasma immersion ion implantation with lithium atoms." In 2007 IEEE International Pulsed Power Plasma Science Conference (PPPS 2007). IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4651972.
Nizou, S., V. Vervisch, H. Etienne, M. Ziti, F. Torregrosa, L. Roux, M. Roy, and D. Alquier. "Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401501.
Vahedi, V., M. A. Lieberman, M. V. Alves, J. P. Verboncoeur, and C. K. Birdsall. "A collisional model for plasma immersion ion implantation." In 1990 Plasma Science IEEE Conference Record - Abstracts. IEEE, 1990. http://dx.doi.org/10.1109/plasma.1990.110778.
Burenkov, Alex, Juergen Lorenz, Yohann Spiegel, and Frank Torregrosa. "Simulation of plasma immersion ion implantation into silicon." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292298.
Cheung, N. W., W. En, J. Gao, S. S. Iyer, E. C. Jones, B. P. Linder, J. B. Liu, X. Lu, J. Min, and B. Shieh. "Plasma Immersion Ion Implantation for Electronic Materials Applications." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.c-2-1.
Ortolland, Claude, Naoto Horiguchi, Christoph Kerner, Thomas Chiarella, Pierre Eyben, Jean-Luc Everaert, Jose Ignacio del Agua Borniquel, et al. "Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033663.
Reports on the topic "Plasma immersion ion implantation":
1
Scheuer, J. T., K. C. Walter, D. J. Rej, M. Nastasi, and J. P. Blanchard. Plasma source ion implantation of ammonia into electroplated chromium. Office of Scientific and Technical Information (OSTI), February 1995. http://dx.doi.org/10.2172/28338.
Bibeault, M. L., and G. R. Thayer. Operations manual for the plasma source ion implantation economics program. Office of Scientific and Technical Information (OSTI), October 1995. http://dx.doi.org/10.2172/366451.
Lillard, R. S., D. P. Butt, T. N. Taylor, K. C. Walter, and M. Nastasi. Diamond-like carbon produced by plasma source ion implantation as a corrosion barrier. Office of Scientific and Technical Information (OSTI), March 1998. http://dx.doi.org/10.2172/645555.
Wood, B. P., W. A. Reass, and I. Henins. Plasma source ion implantation of metal ions: Synchronization of cathodic-arc plasma production and target bias pulses. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/52820.
