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Journal articles on the topic 'Plasma deposition'

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Author: Grafiati

Published: 4 June 2021

Last updated: 22 June 2023

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1

Kuchakova, Iryna, Maria Daniela Ionita, Eusebiu-Rosini Ionita, Andrada Lazea-Stoyanova, Simona Brajnicov, Bogdana Mitu, Gheorghe Dinescu, et al. "Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-frequency Plasma Jets." Materials 13, no. 6 (March 13, 2020): 1296. http://dx.doi.org/10.3390/ma13061296.

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Thin film deposition with atmospheric pressure plasmas is highly interesting for industrial demands and scientific interests in the field of biomaterials. However, the engineering of high-quality films by high-pressure plasmas with precise control over morphology and surface chemistry still poses a challenge. The two types of atmospheric-pressure plasma depositions of organosilicon films by the direct and indirect injection of hexamethyldisiloxane (HMDSO) precursor into a plasma region were chosen and compared in terms of the films chemical composition and morphology to address this. Although different methods of plasma excitation were used, the deposition of inorganic films with above 98% of SiO2 content was achieved for both cases. The chemical structure of the films was insignificantly dependent on the substrate type. The deposition in the afterglow of the DC discharge resulted in a soft film with high roughness, whereas RF plasma deposition led to a smoother film. In the case of the RF plasma deposition on polymeric materials resulted in films with delamination and cracks formation. Lastly, despite some material limitations, both deposition methods demonstrated significant potential for SiOx thin-films preparation for a variety of bio-related substrates, including glass, ceramics, metals, and polymers.

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2

Guchenko, S. A., E. N. Eremin, V. M. Yurov, V. Ch Laurinas, S. S. Kasimov, and O. N. Zavatskaya. "AUTOWAVE PROCESSES IN DEPOSITION OF PLASMA COATINGS." Bulletin of the Karaganda University. "Physics Series" 92, no. 4 (December 30, 2018): 8–18. http://dx.doi.org/10.31489/2018phys4/8-18.

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3

Herman, Herbert. "Plasma Spray Deposition Processes." MRS Bulletin 13, no. 12 (December 1988): 60–67. http://dx.doi.org/10.1557/s0883769400063715.

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The concept of plasma is central to many scientific and engineering disciplines—from the design of neon advertisement lights to fusion physics. Plasmas vary from low density, slight states of ionization (outer space) to dense, thermal plasmas (for extractive metallurgy). And plasmas are prominent in a wide range of deposition processes — from nonthermal plasma-activated processes to thermal plasmas, which have features of flames and which can spray-deposit an enormous variety of materials. The latter technique, arc plasma spraying (or simply, plasma spraying) is evolving rapidly as a way to deposit thick films (>30 μm) and also freestanding forms.This article will review the technology of plasma spraying and how various scientific disciplines are contributing to both an understanding and improvement of this complex process.The plasma gun dates back to the 1950s, when it was introduced for the deposition of alloys and ceramics. Due to its high temperature flame it was quickly discovered that plasmas could be used for depositing refractory oxides as rocket nozzle liners or to fabricate missile nose cones. In the latter technique, the oxide (e.g., zirconia-based ceramics, spinel) was sprayed onto a mandrel and the deposited material was later removed as a free-standing form.The technique's versatility has attracted considerable industrial attention. Modern high performance machinery is commonly subjected to extremes of temperature and mechanical stress, to levels beyond the capabilities of present-day materials. It is becoming increasingly common to form coatings on such material surfaces to protect against high temperature corrosive media and to enhance mechanical wear and erosion resistance. Several thousand parts within an aircraft gas turbine engine have protective coatings, many of them plasma sprayed. In fact, plasma spraying has emerged as a major means to apply a wide range of materials on diverse substrates. The process can be readily carried out in air or in environmental chambers and requires very little substrate surface preparation. The rate of deposit buildup is rapid and the costs are sufficiently low to enable widening applications for an ever increasing variety of industries.

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4

Ray, M. A., J. Duarte, and G. E. McGuire. "Selective plasma deposition." Thin Solid Films 236, no. 1-2 (December 1993): 274–80. http://dx.doi.org/10.1016/0040-6090(93)90682-f.

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5

JangJian, Shiu-Ko, and Ying-Lang Wang. "Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System." Active and Passive Electronic Components 2007 (2007): 1–5. http://dx.doi.org/10.1155/2007/15754.

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The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR) of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS), respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS). The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS) is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and theCuOxbonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced byNF3ddissociation in the RPS and that induces the drastic decrease on PCR.

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6

Rossnagel, S. M., and J. J. Cuomo. "Ion-Beam-Assisted Deposition and Synthesis." MRS Bulletin 12, no. 2 (March 1987): 40–51. http://dx.doi.org/10.1557/s0883769400068391.

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Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of the effects observed with sputtering. The bombarding particle flux is usually controllable so that the arrival rate, energy, and species can be independently varied from the depositing flux. Thus, a basic aspect of ion-beam-based deposition techniques is the “control” often absent in plasma-based techniques. In plasmas, the voltage, current, and pressure are all interdependent. The energetic bombardment at the substrate-film interface depends on the various properties of the plasma, as does the deposition rate. It is often difficult, or even impossible, to decouple these processes. With ion-beam-based deposition techniques, the ion bombardment is essentially independent of the deposition process, and both can be more easily controlled.The incident energetic particle contributes some of its energy or momentum to irreversibly change the dynamics of the film surface. The incident particle may also be incorporated into the growing film, changing the film's chemical nature. The changes induced by particle bombardment during deposition are often not characteristic of equilibrium thermodynamics because the incident particle's energy is often many times the local adsorption or binding energy.

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7

Kroesen, G. M. W., C. J. Timmermans, and D. C. Schram. "Expanding plasma used for plasma deposition." Pure and Applied Chemistry 60, no. 5 (January 1, 1988): 795–808. http://dx.doi.org/10.1351/pac198860050795.

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8

Vallée, Christophe, Marceline Bonvalot, Samia Belahcen, Taguhi Yeghoyan, Moustapha Jaffal, Rémi Vallat, Ahmad Chaker, et al. "Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition." Journal of Vacuum Science & Technology A 38, no. 3 (May 2020): 033007. http://dx.doi.org/10.1116/1.5140841.

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9

Yang, Chu-Hao, Chun-Ping Hsiao, Jerry Chang, Hsin-Yu Lo, and Yun-Chien Cheng. "Large area, rapid, and protein-harmless protein–plasma-polymerized-ethylene coating with aerosol-assisted remote atmospheric-pressure plasma deposition." Journal of Physics D: Applied Physics 55, no. 19 (February 15, 2022): 195203. http://dx.doi.org/10.1088/1361-6463/ac5148.

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Abstract Our goal is to establish a remote-plasma-based aerosol-assisted atmospheric-pressure plasma deposition (RAAPD) system for depositing protein–plasma-polymerized-ethylene coatings. The method of RAAPD is using plasma to polymerize ethylene and add protein aerosol at downstream region to coat protein–plasma-polymerized-ethylene on substrate. We investigated effects of different mixing, mesh, deposition distance, gas flow, voltage, and frequency. Results showed that downstream-mixing method reduced heat effects on protein. The optimal coating was achieved when using mesh, at a close deposition distance, with high flow rate of protein aerosol, and under high voltage. Compared with current methods, impacts of RAAPD include reducing effects of plasma generated heat, reactive species, and UV on protein, and deposition will not be limited by electrode area and substrate material.

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10

Groza, Andreea, Dragana B. Dreghici, and Mihai Ganciu. "Calcium Phosphate Layers Deposited on Thermal Sensitive Polymer Substrates in Radio Frequency Magnetron Plasma Discharge." Coatings 9, no. 11 (October 30, 2019): 709. http://dx.doi.org/10.3390/coatings9110709.

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Calcium phosphate coatings were deposited on thermally sensitive polyprophylene substrates in radio frequency (rf) magnetron sputtering discharge. The steady state of the deposition plasma and its components were identified by deposition rate measurements and mass spectrometry. Low rf powers and deposition rates, with a 10 min plasma on/off temporal deposition scheme, were established as suitable experimental conditions for the deposition of calcium phosphate layers on the thermoplastic polymers. By scanning electron microscopy and atomic force microscopy, the influence of the polymer substrate heating to the surface coating topography was studied. The results showed that the thermal patterning of the polymers during the plasma deposition process favors the embedding of the calcium phosphate into the substrate, the increase of the coating surface roughness, and a good adherence of the layers. The layers generated in the 10 min plasma on/10 min plasma off deposition conditions were not cracked or exfoliated. The Fourier Transform Infrared spectra of the polyprophylene substrates presented similar molecular bands before and after the depositions of calcium phosphate layers.

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11

Bachmann, P. K., G. Gärtner, and H. Lydtin. "Plasma-Assisted Chemical Vapor Deposition Processes." MRS Bulletin 13, no. 12 (December 1988): 52–59. http://dx.doi.org/10.1557/s0883769400063703.

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Over the past two decades a vast number of publications have emerged from laboratories all over the world, describing the application of plasmas for preparing and processing materials. MRS symposia, scientific journals and books, and complete conference series are solely devoted to this specific topic.Modern VLSI integrated circuits, for instance, would simply not exist without sophisticated plasma etching techniques. But highly reactive, partly ionized and dissociated, quasi-neutral gases—plasmas—are not only useful for etching purposes, i.e., the removal of materials. They are also very valuable tools for the deposition of materials with unique structures and compositions at lower temperatures than for conventional thermally induced chemical vapor deposition processes. Backed by intensive research activities and more than a decade of practical experiences, plasma deposition technologies are now penetrating a number of industrial manufacturing processes.Plasmas can be classified into two basic categories — non-isothermal, and isothermal or thermal plasmas.Within the high electric fields applied for non-isothermal plasma generation at reduced pressure, free electrons are accelerated to energies that correspond to several thousand degrees in the case of thermal activation. The neutral species in the gas phase and the heavy ions are either not influenced by the fields or cannot follow changing fields fast enough. Their temperature stays low, resulting in a difference between electron and gas temperature. In these nonequilibrium plasmas, the collisions of high energy electrons and gas molecules result in dissociation processes that would only occur at very high temperatures of more than 5,000 K in the case of thermal equilibrium. Therefore, non-isothermal plasmas allow the preparation of materials and compositions that are difficult to obtain using thermally activated, conventional CVD. Due to the initiation of chemical reaction by collisions with “hot” electrons rather than hot gas molecules, the processing temperature can, in many cases, be kept lower than in conventional deposition processes.

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12

Thomann, A. L., C. Charles, P. Brault, C. Laure, and R. Boswell. "Enhanced deposition rates in plasma sputter deposition." Plasma Sources Science and Technology 7, no. 3 (August 1, 1998): 245–51. http://dx.doi.org/10.1088/0963-0252/7/3/002.

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13

Nakamura, S., Toshikazu Akahori, and Satoshi Nakayama. "Modified ECR Plasma Deposition." Materials Science Forum 140-142 (October 1993): 79–88. http://dx.doi.org/10.4028/www.scientific.net/msf.140-142.79.

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14

Rossnagel, Stephen M. "Magnetron plasma deposition processes." Thin Solid Films 171, no. 1 (April 1989): 125–42. http://dx.doi.org/10.1016/0040-6090(89)90039-4.

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15

Belmonte, T., G. Henrion, and T. Gries. "Nonequilibrium Atmospheric Plasma Deposition." Journal of Thermal Spray Technology 20, no. 4 (March 24, 2011): 744–59. http://dx.doi.org/10.1007/s11666-011-9642-0.

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16

Wuest, G., S. Keller, A. R. Nicoll, and A. Donnelly. "Plasma spray deposition efficiencies." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 6 (November 1985): 2464–68. http://dx.doi.org/10.1116/1.572859.

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17

Hafiz, J., R. Mukherjee, X. Wang, P. H. McMurry, J. V. R. Heberlein, and S. L. Girshick. "Hypersonic Plasma Particle Deposition—A Hybrid between Plasma Spraying and Vapor Deposition." Journal of Thermal Spray Technology 15, no. 4 (December 1, 2006): 822–26. http://dx.doi.org/10.1361/105996306x146802.

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18

Gottscho, Richard A., Maria E. Barone, and Joel M. Cook. "Use of Plasma Processing in Making Integrated Circuits and Flat-Panel Displays." MRS Bulletin 21, no. 8 (August 1996): 38–42. http://dx.doi.org/10.1557/s0883769400035697.

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The ever-shrinking dimensions of microelectronic devices has mandated the use of plasma processing in integrated circuit (IC) factories worldwide. Today the plasma-processing industry has grown to over $3 billion in revenues per year, well in excess of predictions made only a few years ago. Plasma etching and deposition systems are also found throughout flat-panel-display (FPD) factories despite the much larger dimensions of thin-film transistors (TFTs) that are used to switch picture elements (pixels) on and off. Besides the use of plasma in etching and depositing thin films, other processes include the following: removal of photoresist remnants after development (descumming), stripping developed photoresist after pattern transfer (ashing), and passivating defects in polycrystalline material. Why are plasma processes so prevalent?In etching, plasmas are used for high-fidelity transfer of the photolithographically defined pattern that defines the device or circuit. More generally, plasma provides the means to taper sidewalls. In Si processing, the sidewalls must be nearly vertical to obtain high density integration and faster performance. However in making FPDs, sidewalls are tapered to obtain uniform step coverage and reduce shorting. In deposition, plasmas are used to enable processing at low temperature. For both etching and deposition, only plasma processing provides an economically viable means for processing large area substrates: 300 mm for Si and more than 550 × 650 mm for FPDs. It is the ability to scale uniform reactant generation to larger areas that sets plasma apart from beam-based processes that might otherwise offer the desired materials modifications. The nonequilibrium characteristics of plasma further distinguish this processing method. Energetic electrons break apart reactant precursors while ions bombard the surface anisotropically.

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19

Gosar, Žiga, Janez Kovač, Miran Mozetič, Gregor Primc, Alenka Vesel, and Rok Zaplotnik. "Deposition of SiOxCyHz Protective Coatings on Polymer Substrates in an Industrial-Scale PECVD Reactor." Coatings 9, no. 4 (April 3, 2019): 234. http://dx.doi.org/10.3390/coatings9040234.

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The deposition of protective coatings on aluminised polymer substrates by a plasma enhanced chemical vapour deposition PECVD technique in a plasma reactor with a volume of 5 m3 was studied. HMDSO was used as a precursor. Plasma was sustained in a capacitively coupled radiofrequency (RF) discharge powered by an RF generator operating at 40 kHz and having an adjustable output power up to 8 kW. Gaseous plasma was characterised by residual gas mass spectrometry and optical emission spectroscopy. Polymer samples with an average roughness of approximately 5 nm were mounted into the plasma reactor and subjected to a protocol for activation, metallisation and deposition of the protective coating. After depositing the protective coating, the samples were characterised by secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). The combination of various techniques for plasma and coating characterisation provided insight into the complex gas-phase and surface reactions upon deposition of the protective coatings in the industrial-size plasma reactor.

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20

Yasunas, A. "Low-temperature deposition of silicon dioxide films in high-density plasma." Semiconductor Physics Quantum Electronics and Optoelectronics 16, no. 2 (June 25, 2013): 216–19. http://dx.doi.org/10.15407/spqeo16.02.216.

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21

Tuszewski, M., I. Henins, M. Nastasi, W. K. Scarborough, K. C. Walter, and D. H. Lee. "Inductive plasma sources for plasma implantation and deposition." IEEE Transactions on Plasma Science 26, no. 6 (1998): 1653–60. http://dx.doi.org/10.1109/27.747883.

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22

Vepřek, S. "Plasma-induced and plasma-assisted chemical vapour deposition." Thin Solid Films 130, no. 1-2 (August 1985): 135–54. http://dx.doi.org/10.1016/0040-6090(85)90303-7.

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23

Hegemann, D., B. Hanselmann, N. Blanchard, and M. Amberg. "Plasma-Substrate Interaction during Plasma Deposition on Polymers." Contributions to Plasma Physics 54, no. 2 (February 2014): 162–69. http://dx.doi.org/10.1002/ctpp.201310064.

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24

Ma, Hao-Jie, Hua-Sheng Xie, and Bo Li. "Simulations of energy deposition of electron cyclotron waves in a dipole-confined plasma based on ray trajectory." Physics of Plasmas 30, no. 4 (April 2023): 042502. http://dx.doi.org/10.1063/5.0133133.

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The energy deposition of electron cyclotron waves in a dipole-confined plasma is investigated for the RT-1 device, specifically including the effects of high-energy electrons and the electron Bernstein wave (EBW) excitation and absorption. Simulations of wave trajectories with various injection locations and angles indicate that the energy deposition of ordinary mode (O-mode) and extraordinary modes (X-mode) is small in low-temperature plasmas. The high-energy electrons in the plasma increase the energy deposition of the X-mode but have little effect on the O-mode. Meanwhile, the energy deposition of the slow X-EBW conversion and O-X-EBW conversion to excite EBW is also discussed. The results show that the converted EBW in an over-dense plasma is easily obtained, but it may not always have efficient energy deposition. Finally, the possible mechanism for the plasma production and heating by using electron cyclotron waves is proposed.

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25

KAKIUCHI, Hiroaki. "Plasma-Enhanced Chemical Vapor Deposition." Journal of the Japan Society for Precision Engineering 82, no. 11 (2016): 956–60. http://dx.doi.org/10.2493/jjspe.82.956.

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26

Heberlein, J. V. R., and E. Pfender. "Thermal Plasma Chemical Vapor Deposition." Materials Science Forum 140-142 (October 1993): 477–96. http://dx.doi.org/10.4028/www.scientific.net/msf.140-142.477.

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27

FAKIH, C., R. S. BES, B. ARMAS, and D. THENEGAL. "PLASMA DEPOSITION OF SILICON NITRIDE." Le Journal de Physique IV 02, no. C2 (September 1991): C2–413—C2–420. http://dx.doi.org/10.1051/jp4:1991250.

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28

Ceccaroli, B., and A. Ricard. "Plasma spectroscopy for polymer deposition." Revue de Physique Appliquée 21, no. 3 (1986): 197–99. http://dx.doi.org/10.1051/rphysap:01986002103019700.

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29

Randhawa, H. "Cathodic arc plasma deposition technology." Thin Solid Films 167, no. 1-2 (December 1988): 175–86. http://dx.doi.org/10.1016/0040-6090(88)90494-4.

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30

Smith, Donald L., and Andrew S. Alimonda. "Chemistry of SiO2 Plasma Deposition." Journal of The Electrochemical Society 140, no. 5 (May 1, 1993): 1496–503. http://dx.doi.org/10.1149/1.2221586.

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31

Pfender, E., H. Zhu, and Y. C. Lau. "Plasma deposition of superconducting films." Materials Science and Engineering: A 139 (July 1991): 352–55. http://dx.doi.org/10.1016/0921-5093(91)90640-9.

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32

Steckelmacher, W. "Film deposition by plasma techniques." Vacuum 44, no. 10 (October 1993): 1069. http://dx.doi.org/10.1016/0042-207x(93)90300-y.

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33

Blanc, D., and J. I. B. Wilson. "Plasma deposition of chalcogenide glass." Journal of Non-Crystalline Solids 77-78 (December 1985): 1129–32. http://dx.doi.org/10.1016/0022-3093(85)90857-9.

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34

Bain, M. F., B. M. Armstrong, and H. S. Gamble. "Deposition of tungsten by plasma enhanced chemical vapour deposition." Le Journal de Physique IV 09, PR8 (September 1999): Pr8–827—Pr8–833. http://dx.doi.org/10.1051/jp4:19998105.

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35

Zi-Qian, DENG, LIU Min, MAO Jie, ZHANG Xiao-Feng, CHEN Wen-Long, and CHEN Zhi-Kun. "Deposition Mechanism Based on Plasma Spray-Physical Vapor Deposition." Journal of Inorganic Materials 32, no. 12 (2017): 1285. http://dx.doi.org/10.15541/jim20170072.

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36

Poodt, Paul, Bas Kniknie, Annalisa Branca, Hans Winands, and Fred Roozeboom. "Patterned deposition by plasma enhanced spatial atomic layer deposition." physica status solidi (RRL) - Rapid Research Letters 5, no. 4 (March 30, 2011): 165–67. http://dx.doi.org/10.1002/pssr.201004542.

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37

Kersten, H., G. Thieme, M. Fröhlich, D. Bojic, D. H. Tung, M. Quaas, H. Wulff, and R. Hippler. "Complex (dusty) plasmas: Examples for applications and observation of magnetron-induced phenomena." Pure and Applied Chemistry 77, no. 2 (January 1, 2005): 415–28. http://dx.doi.org/10.1351/pac200577020415.

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Low-pressure plasmas offer a unique possibility of confinement, control, and fine tailoring of particle properties. Hence, dusty plasmas have grown into a vast field, and new applications of plasma-processed dust particles are emerging.During the deposition of thin amorphous films onto melamine formaldehyde (MF) microparticles in a C2H2 plasma, the generation of nanosized carbon particles was also studied. The size distribution of those particles is quite uniform.In another experiment, the stability of luminophore grains could be improved by coating with protective Al2O3 films that are deposited by a plasma-enhanced chemical vapor deposition (PECVD) process using a metal-organic precursor gas. Coating of SiO2 microparticles with thin metal layers by magnetron sputtering is also described. Especially the interaction of the microsized grains confined in a radio frequency (rf) plasma with the dc magnetron discharge during deposition was investigated. The observations emphasize that the interaction between magnetron plasma and injected microdisperse powder particles can also be used as a diagnostic tool for the characterization of magnetron sputter sources.

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38

Rossnagel, S. M., and J. J. Cuomo. "Ion Beam Deposition, Film Modification and Synthesis." MRS Bulletin 13, no. 12 (December 1988): 40–45. http://dx.doi.org/10.1557/s0883769400063685.

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Ion beam processing for thin film deposition is rapidly overtaking some of the more conventional plasma-based thin film processing techniques. This is due to strong improvements in the types and reliabilities of the sources available as well as a growing understanding of the advantages and capabilities of using ion beams.An ion beam process can be differentiated from a plasma-based process in that the plasma in an ion beam is generated away from the sample and a beam of ions is directed at the sample. In a plasma-based process, the sample is usually immersed in the plasma. This highlights the fundamental advantage of ion beam processing—control of the flux and energy of the ions incident on either a sample or a target (for sputter deposition). It is this control which is missing in plasma-based processing, where the ion flux (current), ion energy, chamber pressure, and gas species are all hopelessly intertwined. In addition, certain aspects of the ion bombardment—angle of incidence, complications of gas scattering, etc. —are essentially fixed in plasma-based processing, leaving no room to vary parameters, and in conjunction, film properties.A wealth of different types of ion sources cover a broad range of beam currents and energies. At the high energy end (0.1 – 20 MeV) are the implantation sources, typically used for doping semiconductors and treating surfaces (hardening, for example) and for various types of nuclear chemical analysis. These sources, however, tend to be very low current (μA). At slightly lower energies (tens of kilo-electron volts), but significantly higher currents (50 A), are the ion sources used for heating fusion plasmas.

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39

Gopikishan, S., I. Banerjee, Anand Pathak, and S. K. Mahapatra. "Axial distribution of plasma fluctuations, plasma parameters, deposition rate and grain size during copper deposition." Radiation Effects and Defects in Solids 172, no. 7-8 (August 3, 2017): 545–54. http://dx.doi.org/10.1080/10420150.2017.1359597.

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40

Tu, Jay F. "A Synergistic Energy Deposition Process Using a Fiber Laser and a Plasma Torch." Proceedings of the JSME annual meeting 2004.4 (2004): 335–36. http://dx.doi.org/10.1299/jsmemecjo.2004.4.0_335.

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41

Schram, Daniel C. "Plasma processing and chemistry." Pure and Applied Chemistry 74, no. 3 (January 1, 2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.

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Plasma deposition and plasma conversion can be characterized by five steps: production by ionization, transfer of chemistry to precursors, transport of radicals to the surface, surface interactions with deposition, recirculation and generation of new monomers. For very fast deposition, large flows of radicals are needed and a regime is reached, in which monolayer coverage is reached in a very short time. Such large flows of radicals can be obtained by ion-induced interactions, as the C2H radical from acetylene for a-C:H deposition, or by H atom abstraction as the SiH3 radical from SiH4 for a-Si:H deposition. These radicals with intermediate sticking coefficient are advantageous as they are mobile and have a finite dwelling time at the surface. By such a pure radical mechanism, good layers can be formed with very high growth rates, if large radical fluxes can be reached. This regime of high fluence is also interesting for conversion, of which ammonia formation from hydrogen and nitrogen atoms is given as an example. These new approaches offer new possibilities for further development of the field in close connection with surface science, catalysis, and materials science.

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42

Hess, Dennis W. "Plasma-Surface Interactions in Plasma-Enhanced Chemical Vapor Deposition." Annual Review of Materials Science 16, no. 1 (August 1986): 163–83. http://dx.doi.org/10.1146/annurev.ms.16.080186.001115.

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43

Durandet, A., C. A. Davis, and R. W. Boswell. "Pure silicon plasma in a helicon plasma deposition system." Applied Physics Letters 70, no. 14 (April 7, 1997): 1814–16. http://dx.doi.org/10.1063/1.118699.

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Franz, Gerhard. "Plasma Enhanced Chemical Vapor Deposition of Organic Polymers." Processes 9, no. 6 (June 1, 2021): 980. http://dx.doi.org/10.3390/pr9060980.

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Abstract:

Chemical Vapor Deposition (CVD) with its plasma-enhanced variation (PECVD) is a mighty instrument in the toolbox of surface refinement to cover it with a layer with very even thickness. Remarkable the lateral and vertical conformity which is second to none. Originating from the evaporation of elements, this was soon applied to deposit compound layers by simultaneous evaporation of two or three elemental sources and today, CVD is rather applied for vaporous reactants, whereas the evaporation of solid sources has almost completely shifted to epitaxial processes with even lower deposition rates but growth which is adapted to the crystalline substrate. CVD means first breaking of chemical bonds which is followed by an atomic reorientation. As result, a new compound has been generated. Breaking of bonds requires energy, i.e., heat. Therefore, it was a giant step forward to use plasmas for this rate-limiting step. In most cases, the maximum temperature could be significantly reduced, and eventually, also organic compounds moved into the preparative focus. Even molecules with saturated bonds (CH4) were subjected to plasmas—and the result was diamond! In this article, some of these strategies are portrayed. One issue is the variety of reaction paths which can happen in a low-pressure plasma. It can act as a source for deposition and etching which turn out to be two sides of the same medal. Therefore, the view is directed to the reasons for this behavior. The advantages and disadvantages of three of the widest-spread types, namely microwave-driven plasmas and the two types of radio frequency-driven plasmas denoted Capacitively-Coupled Plasmas (CCPs) and Inductively-Coupled Plasmas (ICPs) are described. The view is also directed towards the surface analytics of the deposited layers—a very delicate issue because carbon is the most prominent atom to form multiple bonds and branched polymers which causes multifold reaction paths in almost all cases. Purification of a mixture of volatile compounds is not at all an easy task, but it is impossible for solids. Therefore, the characterization of the film properties is often more orientated towards typical surface properties, e.g., hydrophobicity, or dielectric strength instead of chemical parameters, e.g., certain spectra which characterize the purity (infrared or Raman). Besides diamond and Carbon Nano Tubes, CNTs, one of the polymers which exhibit an almost threadlike character is poly-pxylylene, commercially denoted parylene, which has turned out a film with outstanding properties when compared to other synthetics. Therefore, CVD deposition of parylene is making inroads in several technical fields. Even applications demanding tight requirements on coating quality, like gate dielectrics for semiconductor industry and semi-permeable layers for drug eluting implants in medical science, are coming within its purview. Plasma-enhancement of chemical vapor deposition has opened the window for coatings with remarkable surface qualities. In the case of diamond and CNTs, their purity can be proven by spectroscopic methods. In all the other cases, quantitative measurements of other parameters of bulk or surface parameters, resp., are more appropriate to describe and to evaluate the quality of the coatings.

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Sharma, Uttam, Sachin S. Chauhan, Jayshree Sharma, A. K. Sanyasi, J. Ghosh, K. K. Choudhary, and S. K. Ghosh. "Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition." Journal of Physics: Conference Series 755 (October 2016): 012010. http://dx.doi.org/10.1088/1742-6596/755/1/012010.

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Abhinandan, Lala, and Andreas Holländer. "Localized deposition of hydrocarbon using plasma activated chemical vapour deposition." Thin Solid Films 457, no. 2 (June 2004): 241–45. http://dx.doi.org/10.1016/j.tsf.2003.10.014.

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Hwang, Juyeon, Woo Young Yoon, Ji Young Byun, and Sang Hoon Kim. "Arc plasma deposition of Pd seeding for Cu electroless deposition." Research on Chemical Intermediates 40, no. 1 (October 26, 2013): 57–65. http://dx.doi.org/10.1007/s11164-013-1455-y.

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Lindbauer, A. "Effects of deposition parameters on microwave plasma deposition of diamond." Metal Powder Report 47, no. 10 (October 1992): 51. http://dx.doi.org/10.1016/0026-0657(92)91902-v.

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Itoh, T. "Deposition Mechanisms in Plasma-Enchanced Chemical Vapor Deposition of Titanium." Electrochemical and Solid-State Letters 2, no. 10 (1999): 531. http://dx.doi.org/10.1149/1.1390893.

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Oehr, C., and H. Suhr. "Deposition of silver films by plasma-enhanced chemical vapour deposition." Applied Physics A Solids and Surfaces 49, no. 6 (December 1989): 691–96. http://dx.doi.org/10.1007/bf00616995.

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