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Journal articles on the topic 'Plasma Chemistry - SiH4'

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Published: 7 September 2023

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1

Orlicki, Dariusz, Vladimir Hlavacek, and Hendrik J. Viljoen. "Modeling of a–Si:H deposition in a dc glow discharge reactor." Journal of Materials Research 7, no. 8 (August 1992): 2160–81. http://dx.doi.org/10.1557/jmr.1992.2160.

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PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar–SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Druyvesteyn distributions are compared and the numerical results show that the deposition rate is lower for the Druyvesteyn distribution. The plasma chemistry model includes silane, silyl, silylene, disilane, hydrogen, and atomic hydrogen. The sensitivity of the deposition rate toward the branching ratios SiH3 and SiH2 as well as H2 and H during silyl dissociation is examined. Further parameters that are considered in the sensitivity analysis include anode/cathode temperatures, pressure, applied voltage, gap distance, gap length, molar fraction of SiH4, and flow speed. This work offers insight into the effects of all design and control variables.
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2

Schram, Daniel C. "Plasma processing and chemistry." Pure and Applied Chemistry 74, no. 3 (January 1, 2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.

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Plasma deposition and plasma conversion can be characterized by five steps: production by ionization, transfer of chemistry to precursors, transport of radicals to the surface, surface interactions with deposition, recirculation and generation of new monomers. For very fast deposition, large flows of radicals are needed and a regime is reached, in which monolayer coverage is reached in a very short time. Such large flows of radicals can be obtained by ion-induced interactions, as the C2H radical from acetylene for a-C:H deposition, or by H atom abstraction as the SiH3 radical from SiH4 for a-Si:H deposition. These radicals with intermediate sticking coefficient are advantageous as they are mobile and have a finite dwelling time at the surface. By such a pure radical mechanism, good layers can be formed with very high growth rates, if large radical fluxes can be reached. This regime of high fluence is also interesting for conversion, of which ammonia formation from hydrogen and nitrogen atoms is given as an example. These new approaches offer new possibilities for further development of the field in close connection with surface science, catalysis, and materials science.
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3

Nakayama, Yoshikazu, Kazuo Wakimura, Seiki Takahashi, Hideki Kita, and Takao Kawamura. "Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4." Journal of Non-Crystalline Solids 77-78 (December 1985): 797–800. http://dx.doi.org/10.1016/0022-3093(85)90780-x.

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4

Park, Hwanyeol, and Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma." Coatings 11, no. 9 (August 29, 2021): 1041. http://dx.doi.org/10.3390/coatings11091041.

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The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices; therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture gas has been demonstrated to increase the deposition rate in the SiH4-based plasmas. The fact that SiH4 more efficiently generates Si2H6 at higher gas pressures requires a theoretical investigation of the reactivity of Si2H6 on various surfaces. Therefore, we conducted first-principles density functional theory (DFT) calculations to understand the surface reactivity of Si2H6 on both hydrogenated (H-covered) Si(001) and Si(111) surfaces. The reactivity of Si2H6 molecules on hydrogenated Si surfaces was more energetically favorable than on clean Si surfaces. We also found that the hydrogenated Si(111) surface is the most efficient surface because the dissociation of Si2H6 on the hydrogenated Si(111) surface are thermodynamically and kinetically more favorable than those on the hydrogenated Si(001) surface. Finally, we simulated the SiH4/He capacitively coupled plasma (CCP) discharges for Si:H films deposition.
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5

Kim, Ho Jun. "Importance of Dielectric Elements for Attaining Process Uniformity in Capacitively Coupled Plasma Deposition Reactors." Coatings 12, no. 4 (March 28, 2022): 457. http://dx.doi.org/10.3390/coatings12040457.

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In this study, the effect of dielectric elements on plasma radial uniformity was analyzed for a 300 mm wafer process in a capacitively coupled plasma deposition reactor. Based on a two-dimensional self-consistent fluid model, numerical simulations were performed for SiH4/He discharges at 1200 Pa and at the radio frequency of 13.56 MHz. Although in current plasma processes the wafer is often coated with non-conducting films and placed on a ceramic substrate, related materials have not been analyzed. Therefore, the plasma characteristics were studied in depth by changing the wafer material from silicon to quartz, the electrode material from aluminum to aluminum nitride, and the sidewall material from quartz to perfect dielectric. It was demonstrated that dielectric elements with a lower dielectric constant modify the spatial distributions of plasma parameters. In spite of the thinness of the wafer, as the dielectric constant of the wafer decreases, the electric field at the wafer edge becomes weaker owing to the stronger surface-charging effect. This gives rise to the relatively lower density of reactive species such as SiH2+, Si+, He*, and SiH3 near the wafer edge. In addition, radially uniform plasma was induced by the perfect dielectric sidewall, regardless of the dielectric constant of the wafer. This modification occurred because the radial positions of the peak values of the plasma parameters were moved away from the wafer edge. Therefore, the uniform distribution of the plasma density could be largely achieved by the optimal combination of dielectric elements.
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6

Milne, S. B., Y. Q. Fu, J. K. Luo, A. J. Flewitt, S. Pisana, A. Fasoli, and W. I. Milne. "Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 5 (May 1, 2008): 2693–98. http://dx.doi.org/10.1166/jnn.2008.629.

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Nanocrystalline Si films were prepared with a RF-PECVD system using different SiH4/H2 ratios, plasma powers, substrate temperatures and annealing conditions. The film's intrinsic stress was characterized in relation to the crystallization fraction. Results show that an increasing H2 gas ratio, plasma power or substrate temperature can shift the growth mechanism across a transition point, past which nanocrystalline Si is dominant in the film structure. The film's intrinsic stress normally peaks during this transition region. Different mechanisms of stress formation and relaxation during film growth were discussed, including ion bombardment effects, hydrogen induced bond-reconstruction and nanocomposite effects (nanocrystals embedded in an amorphous Si matrix). A three-parameter schematic plot has been proposed which is based on the results obtained. The film structure and stress are presented in relation to SiH4 gas ratio, plasma power and temperature.
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7

Yuuki, Akimasa, Takaaki Kawahara, Yasuji Matsui, and Kunihide Tachibana. "A Study of Film Precursors in SiH4 Plasma-Enhanced CVD." KAGAKU KOGAKU RONBUNSHU 17, no. 4 (1991): 758–67. http://dx.doi.org/10.1252/kakoronbunshu.17.758.

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8

Jo, Sanghyun, Suik Kang, Kyungjun Lee, and Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas." Coatings 12, no. 9 (September 15, 2022): 1342. http://dx.doi.org/10.3390/coatings12091342.

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This study investigates, numerically, the spatial distribution of metastable helium (He*) in He/SiH4 capacitively coupled plasma (CCP) for the purpose of optimizing plasma density distributions. As a first step, we presented the results of a two-dimensional fluid model of He discharges, followed by those of He/SiH4 discharges to deposit hydrogenated amorphous silicon films, to investigate which factor dominates the coating uniformity. We retained our CCPs in the 300 mm wafer reactor used by the semiconductor industry in the recent past. Selected parameters, such as a sidewall gap (radial distance between the electrode edge and the sidewall), electrical condition of the sidewall, and position of the powered electrode, were considered. In addition, by increasing the gas pressure while varying the sidewall condition, we observed modification of the plasma distributions and, thus, the deposition rate profiles. According to the results, the shift in He* distributions was mainly due to the reduction in the electron mean free path under conditions of gas pressure higher than 100 Pa, as well as local perturbations in the ambipolar electric field due to the finite electrode structure. Small additions of SiH4 largely changed the He* density profile in the midplane of the discharge due to He* quenching. Furthermore, we found that the wide sidewall gap did not improve deposition uniformity against the expectation. This was because the excitation and ionization rate profiles were enhanced and localized only near the bottom electrode edge.
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9

Kim, Dong-Joo, and Kyo-Seon Kim. "Effect of pulse modulation on particle growth during SiH4 plasma process." Korean Journal of Chemical Engineering 25, no. 4 (July 2008): 939–46. http://dx.doi.org/10.1007/s11814-008-0153-8.

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10

Thang, Doan Ha, Hiroshi Muta, and Yoshinobu Kawai. "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H2 mixtures." Thin Solid Films 516, no. 13 (May 2008): 4452–55. http://dx.doi.org/10.1016/j.tsf.2007.10.099.

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11

Nishimiya, Tatsuyuki, Tsukasa Yamane, Sachiko Nakao, Yoshiaki Takeuchi, Yasuhiro Yamauchi, Hiromu Takatsuka, Hiroshi Muta, Kiichiro Uchino, and Yoshinobu Kawai. "Characteristics of SiH4/H2 VHF plasma produced by short gap discharge." Surface and Coatings Technology 205 (July 2011): S411—S414. http://dx.doi.org/10.1016/j.surfcoat.2011.02.043.

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12

Park, N. M., S. H. Kim, G. Y. Sung, and S. J. Park. "Growth and Size Control of Amorphous Silicon Quantum Dots Using SiH4/N2 Plasma." Chemical Vapor Deposition 8, no. 6 (December 3, 2002): 254–56. http://dx.doi.org/10.1002/1521-3862(20021203)8:6<254::aid-cvde254>3.0.co;2-s.

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13

Naskar, S., S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass. "Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study." Journal of Materials Research 23, no. 5 (May 2008): 1433–42. http://dx.doi.org/10.1557/jmr.2008.0176.

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Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.
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14

Kim, Kyung-Soo, and D.-Hyun Jung. "The permeability characteristics of non-porous membrane by C7H5F3/SiH4, plasma polymeric membrane." Korean Journal of Chemical Engineering 17, no. 2 (March 2000): 149–55. http://dx.doi.org/10.1007/bf02707136.

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15

Hajjar, J. ‐J J., and Rafael Reif. "Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures." Journal of The Electrochemical Society 137, no. 9 (September 1, 1990): 2888–96. http://dx.doi.org/10.1149/1.2087094.

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16

LEE, Su Jin, and Byungwhan KIM. "Deposition of silicon nitride film at room temperature using a SiH4–NH3–N2 plasma." Journal of the Ceramic Society of Japan 118, no. 1384 (2010): 1188–91. http://dx.doi.org/10.2109/jcersj2.118.1188.

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17

Kumar, Sushil, Jhuma Gope, Aravind Kumar, A. Parashar, C. M. S. Rauthan, and P. N. Dixit. "High Pressure Growth of Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 8 (August 1, 2008): 4211–17. http://dx.doi.org/10.1166/jnn.2008.an20.

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Nanocrystalline silicon thin films were grown using gaseous mixture of 5% silane (SiH4) diluted in hydrogen (H2) and argon (Ar) in a radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition technique. These films were deposited as a function of pressure and were characterized using AFM, Laser Raman, UV-VIS transmission, photoluminescence and electrical conductivity techniques. AFM micrographs shows that these films contain nanocrystallites of 30–60 nm size. Laser Raman peaks at 520 cm−1 and photoluminescence peaks at 2.75 and 2.85 eV have been observed. The crystalline fraction in these films was varied from 30% to 80% with the variation of deposition pressure from 2 Torr to 8 Torr. There is an optimum pressure of 4 Torr where the maximum growth of nanocrystalline phases was observed. It has been found that nanocrystallites in these film enhanced the optical band gap and electrical conductivity. Also a voltage–current (V–I) probe was used to evaluate the various electrical parameters of the plasma used to deposit the nc-Si:H films for the present investigation. Growth via a SiH3 precursor, diffusion of hydrogen in the sub-surface and argon etching of weak bonds are some of the processes that may be involved in the nano crystallization process.
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18

Boogaarts, M. G. H., P. J. Böcker, W. M. M. Kessels, D. C. Schram, and M. C. M. van de Sanden. "Cavity ring down detection of SiH3 on the broadband à 2A1′ ← X̃ 2A1 transition in a remote Ar–H2–SiH4 plasma." Chemical Physics Letters 326, no. 5-6 (August 2000): 400–406. http://dx.doi.org/10.1016/s0009-2614(00)00795-8.

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19

Smith, Donald L., Andrew S. Alimonda, Chau‐Chen Chen, Steven E. Ready, and Barbara Wacker. "Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma." Journal of The Electrochemical Society 137, no. 2 (February 1, 1990): 614–23. http://dx.doi.org/10.1149/1.2086517.

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20

Loboda, M. J., and J. A. Seifferly. "Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H films." Journal of Materials Research 11, no. 2 (February 1996): 391–98. http://dx.doi.org/10.1557/jmr.1996.0048.

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The growth of amorphous hydrogenated silicon nitride (a-SiN:H) films by plasma enhanced chemical vapor deposition (PECVD) of SiH4−NH3−N2 reactive gas mixtures has been studied. Films were deposited at low temperature (T < 250 °C) in a commercial PECVD system commonly used to grow a-SiN: H for semiconductor integrated circuit passivation. It has been observed that the stress of the a-SiN: H film can be controlled through dilution of the film precursors with an inert gas. Experiments indicate that the influence of the inert gas on the process extends from growth kinetics and plasma chemistry to hydrogen bonding, elemental composition, and biaxial elastic modulus. The stress in films deposited without dilution is tensile. When argon is added to the plasma, Si–Hx plasma chemistry and film hydrogen bond density change producing a reduction in the amount of tensile stress. Dilution with helium can be used to shift the film stress from tensile to compressive with minimum change in growth rate. The observed helium/film stress relationship is associated with helium-based Penning ionization processes, which create metastable reactive gas species. In turn, the metastables influence nitrogen and hydrogen incorporation into the film. Nitrogen incorporation produces volume expansion of the film, increasing the compressive character of the film stress. This effect is similar to that observed when the RF power is varied or when low or multifrequency plasma excitation is used during PECVD growth of a-SiN: H.
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21

Yamauchi, Yasuhiro, Yoshiaki Takeuchi, Hiromu Takatsuka, Yuichi Kai, Hiroshi Muta, and Yoshinobu Kawai. "Large area SiH4/H2 VHF plasma produced at high pressure using multi-rod electrode." Surface and Coatings Technology 202, no. 22-23 (August 2008): 5668–71. http://dx.doi.org/10.1016/j.surfcoat.2008.06.041.

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22

Ambrosio, R. "Silicon–germanium films prepared from SiH4 and GeF4 by low frequency plasma deposition." Journal of Non-Crystalline Solids 329, no. 1-3 (November 1, 2003): 134–39. http://dx.doi.org/10.1016/j.jnoncrysol.2003.08.027.

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23

Morozov, O. V., and I. I. Amirov. "SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma." Russian Microelectronics 29, no. 3 (May 2000): 153–58. http://dx.doi.org/10.1007/bf02773255.

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24

Itagaki, N., K. Sasaki, and Y. Kawai. "Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves." Thin Solid Films 506-507 (May 2006): 479–84. http://dx.doi.org/10.1016/j.tsf.2005.08.087.

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25

Kim, Byungwhan, and Sang Hee Kwon. "Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma." Surface and Coatings Technology 202, no. 22-23 (August 2008): 5539–42. http://dx.doi.org/10.1016/j.surfcoat.2008.06.030.

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26

Nagai, Takehiko, Arno H. M. Smets, and Michio Kondo. "Time-resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4–H2 VHF plasma." Journal of Non-Crystalline Solids 354, no. 19-25 (May 2008): 2096–99. http://dx.doi.org/10.1016/j.jnoncrysol.2007.09.009.

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27

Zhou, Nan-Sheng, Shizuo Fujita, and Akio Sasaki. "Structural and electrical properties of plasma-deposited silicon nitride from SiH4-N2 gas mixture." Journal of Electronic Materials 14, no. 1 (January 1985): 55–72. http://dx.doi.org/10.1007/bf02657920.

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28

Jia, Haijun, Jhantu K. Saha, Naoyuki Ohse, and Hajime Shirai. "High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma." Thin Solid Films 515, no. 17 (June 2007): 6713–20. http://dx.doi.org/10.1016/j.tsf.2007.01.055.

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29

Kim, Jae-Hong, Chai-O. Chung, Dongsun Sheen, Yong-Sun Sohn, Hyun-Chul Sohn, Jin-Woong Kim, and Sung-Wook Park. "Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry." Journal of Applied Physics 96, no. 3 (August 2004): 1435–42. http://dx.doi.org/10.1063/1.1767979.

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30

Kim, Byungwhan, Minji Kwon, and Yong Ho Seo. "Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma." Metals and Materials International 16, no. 4 (August 2010): 621–25. http://dx.doi.org/10.1007/s12540-010-0815-z.

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31

Saha, Jhantu K., Haijun Jia, Naoyuki Ohse, and Hajime Shirai. "High rate growth highly crystallized microcrystalline silicon films using SiH4/H2 high-density microwave plasma." Thin Solid Films 515, no. 9 (March 2007): 4098–104. http://dx.doi.org/10.1016/j.tsf.2006.02.062.

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32

Courtney, Clay H., Bradley C. Smith, and H. Henry Lamb. "Remote Plasma‐Enhanced Chemical Vapor Deposition of SiO2 Using Ar/ N 2 O and SiH4." Journal of The Electrochemical Society 145, no. 11 (November 1, 1998): 3957–62. http://dx.doi.org/10.1149/1.1838898.

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33

Winkler, R., M. Capitelli, C. Gorse, and J. Wilhelm. "Electron kinetics in a collision-dominated SiH4 rf plasma including self-consistent rf field strength calculation." Plasma Chemistry and Plasma Processing 10, no. 3 (September 1990): 419–42. http://dx.doi.org/10.1007/bf01447201.

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34

Moiseev, T., D. Chrastina, and G. Isella. "Plasma Composition by Mass Spectrometry in a Ar-SiH4-H2 LEPECVD Process During nc-Si Deposition." Plasma Chemistry and Plasma Processing 31, no. 1 (January 5, 2011): 157–74. http://dx.doi.org/10.1007/s11090-010-9277-9.

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35

Sedov, V. S., A. K. Martyanov, A. A. Khomich, S. S. Savin, V. V. Voronov, R. A. Khmelnitskiy, A. P. Bolshakov, and V. G. Ralchenko. "Co-deposition of diamond and β-SiC by microwave plasma CVD in H2-CH4-SiH4 gas mixtures." Diamond and Related Materials 98 (October 2019): 107520. http://dx.doi.org/10.1016/j.diamond.2019.107520.

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36

Jonas, Stanisława, Jadwiga Konefał-Góral, Anna Małek, Stanisława Kluska, and Zbigniew Grzesik. "Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method." High Temperature Materials and Processes 33, no. 5 (September 29, 2014): 391–98. http://dx.doi.org/10.1515/htmp-2013-0059.

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AbstractFour different layers of various silicon, carbon and nitrogen contents on the Ti6Al4V alloy and (001)Si wafers have been deposited by means of Plasma Assisted Chemical Vapor Deposition (PACVD) method. The layers were obtained from reactive gas mixture containing SiH4, CH4, NH3 and Ar. After deposition the structure and chemical composition of modified surfaces have been analyzed with use of SEM/EDS technique. Based on these results and thermodynamic calculations, the diffusion coefficients, D, for nitrogen and carbon in alloy were discussed. Scratch test shown that silicon carbonitride layers have good adhesion to metal surface. In order to determine atomic structure of obtained layers, FTIR spectra for layer-(001)Si and layer-Ti6Al4V were registered.
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37

Remy, J., G. Dingemans, W. W. Stoffels, and G. M. W. Kroesen. "IN SITU IR OPTICAL MEASUREMENTS OF GAS PROPERTIES IN A CAPACITIVELY COUPLED RF Ar/SiH4 PLASMA." High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) 9, no. 1 (2005): 159–71. http://dx.doi.org/10.1615/hightempmatproc.v9.i1.130.

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38

Lee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park, and Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition." Journal of The Electrochemical Society 145, no. 8 (August 1, 1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.

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39

Zou, Xiangping, Xiaosu Yi, and Zhenkui Fang. "Preparation and characteristics of thin film with wear-resistant behavior on HDPE surface polymerized by C2H2-H2-SiH4 plasma." Journal of Applied Polymer Science 70, no. 8 (November 21, 1998): 1561–66. http://dx.doi.org/10.1002/(sici)1097-4628(19981121)70:8<1561::aid-app13>3.0.co;2-5.

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40

Kessels, W. M. M., F. J. H. van Assche, P. J. van den Oever, and M. C. M. van de Sanden. "The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma." Journal of Non-Crystalline Solids 338-340 (June 2004): 37–41. http://dx.doi.org/10.1016/j.jnoncrysol.2004.02.017.

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41

Bertran, E., J. M. López-Villegas, J. L. Andújar, J. Campmany, A. Canillas, and J. R. Morante. "Optical and electrical properties of a-SixNy:H films prepared by rf plasma using N2+SiH4 gas mixtures." Journal of Non-Crystalline Solids 137-138 (January 1991): 895–98. http://dx.doi.org/10.1016/s0022-3093(05)80264-9.

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42

Jeong, Chaehwan, Seongjae Boo, Minsung Jeon, and Koichi Kamisako. "Characterization of Intrinsic a-Si:H Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition for Solar Cell Applications." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4169–73. http://dx.doi.org/10.1166/jnn.2007.064.

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The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 °C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm−1, which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.
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43

Kim, Ho Jun, and Jung Hwan Yoon. "Computational Fluid Dynamics Analysis of Particle Deposition Induced by a Showerhead Electrode in a Capacitively Coupled Plasma Reactor." Coatings 11, no. 8 (August 23, 2021): 1004. http://dx.doi.org/10.3390/coatings11081004.

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Defect formation in the deposition of thin films for semiconductors is not yet sufficiently understood. In a showerhead-type capacitively coupled plasma (CCP) deposition reactor, the showerhead acts as both the gas distributor and the electrode. We used computational fluid dynamics to investigate ways to enhance cleanliness by analyzing the particle deposition induced by the showerhead electrode in a CCP reactor. We analyzed particle transport phenomena using a three-dimensional complex geometry, whereas SiH4/He discharges were simulated in a two-dimensional simplified geometry. The process volume was located between the RF-powered showerhead and the grounded heater. We demonstrated that the efficient transportation of particles with a radius exceeding 1 μm onto the heater is facilitated by acceleration inside the showerhead holes. Because the available space in which to flow inside the showerhead is constricted, high gas velocities within the showerhead holes can accelerate particles and lead to inertia-enhanced particle deposition. The effect of the electrode spacing on the deposition of particles generated in plasma discharges was also investigated. Smaller electrode spacing promoted the deposition of particles fed from the showerhead on the heater, whereas larger electrode spacing facilitated the deposition of particles generated in plasma discharges on the heater.
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44

Gatilova, L., S. Bouchoule, S. Guilet, and G. Patriarche. "High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 2 (March 2011): 020601. http://dx.doi.org/10.1116/1.3546024.

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45

Lee, Sung-Eun, and Young-Chun Park. "Low-temperature deposition of SiNx, SiOxNy, and SiOx films from plasma discharge of SiH4 for polycarbonate glazing applications." Thin Solid Films 636 (August 2017): 34–39. http://dx.doi.org/10.1016/j.tsf.2017.04.022.

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46

Kim, Byungwhan, Sanghee Kwon, Hyung-Su Woo, Jeong Kim, and Sang Chul Jung. "Radio Frequency Source Power-Induced Ion Energy Impact on SiN Films Deposited Using a Room Temperature SiH4–N2 Plasma." Journal of Nanoscience and Nanotechnology 11, no. 2 (February 1, 2011): 1314–18. http://dx.doi.org/10.1166/jnn.2011.3405.

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47

Morgan, W. L. "A critical evaluation of low-energy electron impact cross sections for plasma processing modeling. II: Cl4, SiH4, and CH4." Plasma Chemistry and Plasma Processing 12, no. 4 (December 1992): 477–93. http://dx.doi.org/10.1007/bf01447255.

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48

Kim, D. J., J. Y. Hwang, T. J. Kim, N. E. Lee, and Y. D. Kim. "Effect of N2O/SiH4 flow ratio on properties of SiOx thin films deposited by low-temperature remote plasma-enhanced chemical deposition." Surface and Coatings Technology 201, no. 9-11 (February 2007): 5354–57. http://dx.doi.org/10.1016/j.surfcoat.2006.07.035.

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49

Kosku, Nihan, and Seiichi Miyazaki. "Insights into the high-rate growth of highly crystallized silicon films from inductively coupled plasma of H2-diluted SiH4." Thin Solid Films 511-512 (July 2006): 265–70. http://dx.doi.org/10.1016/j.tsf.2005.12.105.

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50

Das, Debajyoti, Debnath Raha, and Koyel Bhattacharya. "Evolution of nc-Si Network and the Control of Its Growth by He/H2 Plasma Assistance in SiH4 at PECVD." Journal of Nanoscience and Nanotechnology 9, no. 9 (September 1, 2009): 5614–21. http://dx.doi.org/10.1166/jnn.2009.1151.

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