Journal articles: 'PiezoMEMS'

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Fragkiadakis, Charalampos, Subramanian Sivaramakrishnan, Thorsten Schmitz-Kempen, Peter Mardilovich, and Susan Trolier-McKinstry. "Heat generation in PZT MEMS actuator arrays." Applied Physics Letters 121, no. 16 (October 17, 2022): 162906. http://dx.doi.org/10.1063/5.0114670.

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Piezoelectric microelectromechanical systems (piezoMEMS) enable dense arrays of actuators which are often driven to higher electrical fields than their bulk piezoelectric counterparts. In bulk ceramics, high field driving causes internal heating of the piezoelectric, largely due to field-induced domain wall motion. Self-heating is then tracked as a function of vibration velocity to determine the upper bound for the drive levels. However, the literature is limited concerning self-heating in thin film piezoMEMS. In this work, it is shown that self-heating in piezoMEMS transducer arrays occurs due to domain wall motion and Ohmic losses. This was demonstrated via a systematic study of drive waveform dependence of self-heating in piezoMEMS arrays. In particular, the magnitude of self-heating was quantified as a function of different waveform parameters (e.g., amplitude, DC offset, and frequency). Thermal modeling of the self-heating of piezoMEMS using the measured hysteresis loss from electrical characterization as the heat source was found to be in excellent agreement with the experimental data. The self-heating model allows improved thermal design of piezoMEMS and can, furthermore, be utilized for functional heating, especially for device level poling.

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Ramachandramoorthy, Rajaprakash, Massimiliano Milan, Zhaowen Lin, Susan Trolier-McKinstry, Alberto Corigliano, and Horacio Espinosa. "Design of piezoMEMS for high strain rate nanomechanical experiments." Extreme Mechanics Letters 20 (April 2018): 14–20. http://dx.doi.org/10.1016/j.eml.2017.12.006.

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Jackson, Nathan. "PiezoMEMS Nonlinear Low Acceleration Energy Harvester with an Embedded Permanent Magnet." Micromachines 11, no. 5 (May 15, 2020): 500. http://dx.doi.org/10.3390/mi11050500.

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Increasing the power density and bandwidth are two major challenges associated with microelectromechanical systems (MEMS)-based vibration energy harvesting devices. Devices implementing magnetic forces have been used to create nonlinear vibration structures and have demonstrated limited success at widening the bandwidth. However, monolithic integration of a magnetic proof mass and optimizing the magnet configuration have been challenging tasks to date. This paper investigates three different magnetic configurations and their effects on bandwidth and power generation using attractive and repulsive magnetic forces. A piezoMEMS device was developed to harvest vibration energy, while monolithically integrating a thick embedded permanent magnet (NdFeB) film. The results demonstrated that repulsive forces increased the bandwidth for in-plane and out-of-plane magnetic configurations from <1 to >7 Hz bandwidths. In addition, by using attractive forces between the magnets, the power density increased while decreasing the bandwidth. Combining these forces into a single device resulted in increased power and increased bandwidth. The devices created in this paper focused on low acceleration values (<0.1 g) and low-frequency applications.

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Kordrostami, Zoheir, and Sajjad Roohizadegan. "A groove engineered ultralow frequency piezomems energy harvester with ultrahigh output voltage." International Journal of Modern Physics B 32, no. 20 (July 31, 2018): 1850208. http://dx.doi.org/10.1142/s0217979218502089.

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In this paper, for the first time, a new design for a MEMS cantilever-based energy harvester (EH) has been proposed which takes advantage of two engineered piezoelectric layers. The output voltage of the EH has been increased by the aid of making grooves in the piezoelectric layers. By application of the grooves in the piezoelectric layers, the sensitivity of the cantilever as the vibration sensor or the EH has been improved. Results have shown that these grooves can increase the output voltage and decrease the resonance frequency which are desired changes in designing EHs. The single and double groove bimorph cantilevers have been compared and discussed. The position, length and depth of the grooves have been used as optimization parameters and consequently an optimal design has been proposed at the end of the paper. In the optimal design the top and the bottom piezoelectric layers have not covered the entire beam and have different lengths to produce maximum voltage. By means of groove engineering, we could rise the voltage from 5.395 V to 28.35 V which is considered a great improvement compared to other structures reported previously.

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Jackson, Nathan, Oskar Z. Olszewski, Cian O’Murchu, and Alan Mathewson. "Ultralow-frequency PiezoMEMS energy harvester using thin-film silicon and parylene substrates." Journal of Micro/Nanolithography, MEMS, and MOEMS 17, no. 01 (March 23, 2018): 1. http://dx.doi.org/10.1117/1.jmm.17.1.015005.

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Mere, Viphretuo, Sudhanshu Tiwari, Aneesh Dash, Rakshitha Kallega, Akshay Naik, Rudra Pratap, and Shankar Kumar Selvaraja. "Photonics Integrated PiezoMEMS-PipMEMS: A Scalable Hybrid Platform for Next-Generation MEMS." IEEE Sensors Letters 4, no. 12 (December 2020): 1–4. http://dx.doi.org/10.1109/lsens.2020.3042708.

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Priya, Shashank, Hyun-Cheol Song, Yuan Zhou, Ronnie Varghese, Anuj Chopra, Sang-Gook Kim, Isaku Kanno, et al. "A Review on Piezoelectric Energy Harvesting: Materials, Methods, and Circuits." Energy Harvesting and Systems 4, no. 1 (August 27, 2019): 3–39. http://dx.doi.org/10.1515/ehs-2016-0028.

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Abstract Piezoelectric microelectromechanical systems (PiezoMEMS) are attractive for developing next generation self-powered microsystems. PiezoMEMS promises to eliminate the costly assembly for microsensors/microsystems and provide various mechanisms for recharging the batteries, thereby, moving us closer towards batteryless wireless sensors systems and networks. In order to achieve practical implementation of this technology, a fully assembled energy harvester on the order of a quarter size dollar coin (diameter=24.26 mm, thickness=1.75 mm) should be able to generate about 100 μW continuous power from low frequency ambient vibrations (below 100 Hz). This paper reviews the state-of-the-art in microscale piezoelectric energy harvesting, summarizing key metrics such as power density and bandwidth of reported structures at low frequency input. This paper also describes the recent advancements in piezoelectric materials and resonator structures. Epitaxial growth and grain texturing of piezoelectric materials is being developed to achieve much higher energy conversion efficiency. For embedded medical systems, lead-free piezoelectric thin films are being developed and MEMS processes for these new classes of materials are being investigated. Non-linear resonating beams for wide bandwidth resonance are also reviewed as they would enable wide bandwidth and low frequency operation of energy harvesters. Particle/granule spray deposition techniques such as aerosol-deposition (AD) and granule spray in vacuum (GSV) are being matured to realize the meso-scale structures in a rapid manner. Another important element of an energy harvester is a power management circuit, which should maximize the net energy harvested. Towards this objective, it is essential for the power management circuit of a small-scale energy harvester to dissipate minimal power, and thus it requires special circuit design techniques and a simple maximum power point tracking scheme. Overall, the progress made by the research and industrial community has brought the energy harvesting technology closer to the practical applications in near future.

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Esteves, Giovanni, Chris M. Fancher, Margeaux Wallace, Raegan Johnson-Wilke, Rudeger H. T. Wilke, Susan Trolier-McKinstry, Ronald G. Polcawich, and Jacob L. Jones. "In situ X-ray diffraction of lead zirconate titanate piezoMEMS cantilever during actuation." Materials & Design 111 (December 2016): 429–34. http://dx.doi.org/10.1016/j.matdes.2016.09.011.

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Sanchez, Luz M., Daniel M. Potrepka, Glen R. Fox, Ichiro Takeuchi, Ke Wang, Leonid A. Bendersky, and Ronald G. Polcawich. "Optimization of PbTiO3 seed layers and Pt metallization for PZT-based piezoMEMS actuators." Journal of Materials Research 28, no. 14 (July 19, 2013): 1920–31. http://dx.doi.org/10.1557/jmr.2013.172.

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Yang, Hao, Jinyan Zhao, Wei Ren, Zuo-Guang Ye, K. B. Vinayakumar, Rosana A. Dias, Rui M. R. Pinto, Jian Zhuang, and Nan Zhang. "Lead free 0.9Na_1/2Bi_1/2TiO₃–0.1BaZr_0.2Ti_0.8O₃ thin film with large piezoelectric electrostrain." Applied Physics Letters 121, no. 13 (September 26, 2022): 132903. http://dx.doi.org/10.1063/5.0106934.

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A sodium bismuth titanate-based thin film is widely investigated lead-free piezoelectrics with potential applications for modern micro-devices such as PiezoMEMS. In this work, a 0.9Na1/2Bi1/2TiO3–0.1BaZr0.2Ti0.8O3 thin film was deposited on a Pt/Ti/SiO2/Si (001) substrate by the sol–gel spin coating method. The deposited piezoelectric film shows low dielectric loss and high remnant polarization. The measured ferroelectricity loop showed a coercive field of 110 kV/cm and a saturation polarization of 46.83 μC/cm2. The piezoelectric response of this thin film does not decrease from room temperature to around 100 °C. The fabricated piezoelectric device with bottom and top electrodes showed a large macro-scale strain value of ∼4% under the DC (30 V) and AC voltages (f = 800 kHz, Vpp = 10 V).

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Li, Minghua, Huamao Lin, Kan Hu, and Yao Zhu. "Oxide overlayer formation on sputtered ScAlN film exposed to air." Applied Physics Letters 121, no. 11 (September 12, 2022): 111602. http://dx.doi.org/10.1063/5.0106717.

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There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin films for use in electronic devices, due to their excellent piezoMEMS response, large spontaneous polarization, and the capability for CMOS-compatible integration. As with the undoped AlN film, the formation of an oxide overlayer on the air-exposed ScAlN film can modulate its surface structure and the electrical properties. In this study, we investigate the effects of surface oxidation on a ScAlN film by characterizing the film microstructure and the elemental chemical states. We found that amorphous phase and small crystallites co-exist in the oxide overlayer, which is remarkably different from the columnar (0002) crystalline texture in the bulk ScAlN film. X-ray photoelectron spectroscopy core-level analyses confirm the formation of Al–O and Sc–O bonds. Moreover, the valence band maximum of the oxide overlayer shifts toward a higher binding energy, indicating a high energy barrier at the ScAlN/metal interface. Our results suggest that ScAlN surface oxidation is a chemical reaction-driven and self-limited process.

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Olszewski, Oskar Z., Ruth Houlihan, Alan Blake, Alan Mathewson, and Nathan Jackson. "Evaluation of Vibrational PiezoMEMS Harvester That Scavenges Energy From a Magnetic Field Surrounding an AC Current-Carrying Wire." Journal of Microelectromechanical Systems 26, no. 6 (December 2017): 1298–305. http://dx.doi.org/10.1109/jmems.2017.2731400.

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13

Yuan, Huiyu, Minh Nguyen, Tom Hammer, Gertjan Koster, Guus Rijnders, and Johan E. ten Elshof. "Synthesis of KCa2Nb3O10 Crystals with Varying Grain Sizes and Their Nanosheet Monolayer Films As Seed Layers for PiezoMEMS Applications." ACS Applied Materials & Interfaces 7, no. 49 (December 2, 2015): 27473–78. http://dx.doi.org/10.1021/acsami.5b09456.

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Shibata, Kenji, Kazutoshi Watanabe, Toshiaki Kuroda, and Takenori Osada. "KNN lead-free piezoelectric films grown by sputtering." Applied Physics Letters 121, no. 9 (August 29, 2022): 092901. http://dx.doi.org/10.1063/5.0104583.

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Potassium sodium niobate [(K,Na)NbO3, KNN] films are promising lead-free piezoelectric materials for microelectromechanical systems (MEMS) devices. We previously developed technologies for forming high-quality KNN films by sputtering, which showed excellent piezoelectric properties comparable to lead zirconate titanate (PZT) films. In the present study, we addressed several challenges with the aim of introducing KNN films into commercialized MEMS devices. First, we optimized the dielectric and piezoelectric properties to realize a suitable performance for actuator and sensor devices. The sensor-type KNN films had a low dielectric constant (248) and a self-poling function, which are greatly beneficial for sensor device performance and the fabrication process. The actuator-type KNN films had a very high e31 value of −13.5 C/m2, which is almost comparable to the top level of PZT films. Next, we found that the DC stress lifetime of KNN films strongly depended on the material used for the adhesion layer of the top electrode. When we used a Pt/RuO2 top electrode, the actuator-type KNN films had a long lifetime (>130 000 s, 300 kV/cm and 200 °C), which is long enough to be used for commercialized MEMS devices. Furthermore, we realized 8-in. KNN wafers with good thickness uniformity across the wafer (±3.5%) by introducing a mass-production-ready sputtering tool: the EB-2500 produced by Canon Anelva. In the near future, these promising results will open the way to replace PZT with KNN in the piezoMEMS industry.

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Trigona, Carlo, Valentina Sinatra, Giuseppa Crea, Bruno Ando, and Salvatore Baglio. "Characterization of a PiezoMUMPs Microsensor for Contactless Measurements of DC Electrical Current." IEEE Transactions on Instrumentation and Measurement 69, no. 4 (April 2020): 1387–96. http://dx.doi.org/10.1109/tim.2019.2908510.

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Guimarães, Daniel D., Vitor Garcia, and Fabiano Fruett. "Design and Fabrication of Silicon PiezoMOS Transistors for Applications on MEMS." ECS Transactions 39, no. 1 (December 16, 2019): 425–30. http://dx.doi.org/10.1149/1.3615222.

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Robichaud, Alexandre, Dominic Deslandes, Paul-Vahé Cicek, and Frederic Nabki. "A System in Package Based on a Piezoelectric Micromachined Ultrasonic Transducer Matrix for Ranging Applications." Sensors 21, no. 8 (April 7, 2021): 2590. http://dx.doi.org/10.3390/s21082590.

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This paper proposes a system in package (SiP) for ultrasonic ranging composed of a 4 × 8 matrix of piezoelectric micromachined ultrasonic transducers (PMUT) and an interface integrated circuit (IC). The PMUT matrix is fabricated using the PiezoMUMPS process and the IC is implemented in the AMS 0.35 µm technology. Simulation results for the PMUT are compared to the measurement results, and an equivalent circuit has been derived to allow a better approximation of the load of the PMUT on the IC. The control circuit is composed of a high-voltage pulser to drive the PMUT for transmission and of a transimpedance amplifier to amplify the received echo. The working frequency of the system is 1.5 MHz.

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Biswal, Priyabrata, Sougata Kumar Kar, and Banibrata Mukherjee. "Design and Optimization of High-Performance Through Hole Based MEMS Energy Harvester Using PiezoMUMPs." Journal of Electronic Materials 50, no. 1 (October 30, 2020): 375–88. http://dx.doi.org/10.1007/s11664-020-08528-6.

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Braun, P. "Einsatz von DMS- und Piezome�technik zur direkten Schubspannungsermittlung in der Kapillarrheometrie." Rheologica Acta 29, no. 4 (July 1990): 243–51. http://dx.doi.org/10.1007/bf01339881.

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Braun, P. "Einsatz von DMS- und Piezome�technik zur direkten Schubspannungsermittlung in der Kapillarrheometrie." Rheologica Acta 29, no. 3 (May 1990): 243–51. http://dx.doi.org/10.1007/bf01331360.

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Cziriák, Nobert Bence, József Szalma, János Vág, and Sándor Bogdán. "Piezosebészeti eszköz és a sagittalis csontfűrész intraossealis hőtermelésének in vitro összehasonlító vizsgálata." Fogorvosi Szemle 109, no. 3. (September 15, 2016): 88–93. http://dx.doi.org/10.33891/fsz.109.3.88-93.

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Vizsgálatunkban in vitro körülmények között összehasonlítottuk a piezosebészeti eszköz és a sagittális csontfűrész által termelt hőmennyiséget.Sertésbordába K-típusú hőérzékelőt rögzítettünk, amitől 1 mm távolságra, „legyezőszerű” folyamatos mozgással 30-30 bordát vágtunk át sagittalis fűrésszel (S-8 S – Elcomed, W&H) és piezosebészeti eszközzel (B6 – Piezomed, W&H). Utóbbival hűtési ciklusokat közbeiktatva 30 mintán szakaszos vágást is végeztünk.Sagittalis fűrésszel végzett osteotomia során nem mértünk 47oC feletti értéket. Piezoelektromos eszközzel „legyezőszerű”, folyamatos mozgással végzett vágás mellett a mérési eredmények 16,2 ± 3,53%-a elérte a kritikus hőmérsékletértéket, hűtési ciklusok közbeiktatásával ez az érték 2,6 ± 0,96%-ra csökkent (p < 0.001). A hőmérséklet egyetlen esetben sem haladta meg a 47oC-ot több mint 20 másodpercig.A piezosebészeti eszköz biztonságosan használható, azonban az osteonecrosis kialakulásának esélyét tovább csökkenthetjük hűtési ciklusok közbeiktatásával, intermittáló műszerhasználattal és maximális vízhűtéssel.

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Ba Hashwan, Saeed S., M. H. Md Khir, Y. Al-Douri, Abdelaziz Y. Ahmed, Abdullah S. Algamili, Sami S. Alabsi, and Mohammed M. Junaid. "Analytical Modeling of AIN-Based Film Bulk Acoustic Wave Resonator for Hydrogen sulfide Gas detection Based on PiezoMUMPs." Journal of Physics: Conference Series 1962, no. 1 (July 1, 2021): 012003. http://dx.doi.org/10.1088/1742-6596/1962/1/012003.

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Trigona, C., A. Algozino, F. Maiorca, B. Andò, and S. Baglio. "Design and Characterization of PiezoMUMPs Microsensors with Applications to Environmental Monitoring of Aromatic Compounds via Selective Supramolecular Receptors." Procedia Engineering 87 (2014): 1190–93. http://dx.doi.org/10.1016/j.proeng.2014.11.379.

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Gonzalez, Miguel, and Yoonseok Lee. "A Study on Parametric Amplification in a Piezoelectric MEMS Device." Micromachines 10, no. 1 (December 29, 2018): 19. http://dx.doi.org/10.3390/mi10010019.

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In various applications, damping from the surrounding fluid severely degrades the performance of micro-electro-mechanical systems (MEMS). In this paper, mechanical amplification through parametric resonance was investigated in a piezoelectrically actuated MEMS to overcome the effects of damping. The device was fabricated using the PiezoMUMPS process, which is based on a Silicon-on-Insulator (SOI) process with an additional aluminum nitride (AlN) layer. Here, a double-clamped cantilever beam with a concentrated mass at the center was excited at its first resonance mode (out-of-plane motion) in air and at atmospheric conditions. A parametric signal modulating the stiffness of the beam was added at twice the frequency of the excitation signal, which was swept through the resonance frequency of the mode. The displacement at the center of the device was detected optically. A four-fold increase in the quality-factor, Q, of the resonator was obtained at the highest values in amplitude used for the parametric excitation. The spring modulation constant was obtained from the effective quality-factor, Q e f f , versus parametric excitation voltage curve. This study demonstrates that through these methods, significant improvements in performance of MEMS in fluids can be obtained, even for devices fabricated using standard commercial processes.

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Sharma, Kohli, Brière, Ménard, and Nabki. "Translational MEMS Platform for Planar Optical Switching Fabrics." Micromachines 10, no. 7 (June 30, 2019): 435. http://dx.doi.org/10.3390/mi10070435.

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While 3-D microelectromechanical systems (MEMS) allow switching between a large number of ports in optical telecommunication networks, the development of such systems often suffers from design, fabrication and packaging constraints due to the complex structures, the wafer bonding processes involved, and the tight alignment tolerances between different components. In this work, we present a 2-D translational MEMS platform capable of highly efficient planar optical switching through integration with silicon nitride (SiN) based optical waveguides. The discrete lateral displacement provided by simple parallel plate actuators on opposite sides of the central platform enables switching between different input and output waveguides. The proposed structure can displace the central platform by 3.37 µm in two directions at an actuation voltage of 65 V. Additionally, the parallel plate actuator designed for closing completely the 4.26 µm air gap between the fixed and moving waveguides operates at just 50 V. Eigenmode expansion analysis shows over 99% butt-coupling efficiency the between the SiN waveguides when the gap is closed. Also, 2.5 finite-difference time-domain analysis demonstrates zero cross talk between two parallel SiN waveguides across the length of the platform for a 3.5 µm separation between adjacent waveguides enabling multiple waveguide configuration onto the platform. Different MEMS designs were simulated using static structural analysis in ANSYS. These designs were fabricated with a custom process by AEPONYX Inc. (Montreal, QC, Canada) and through the PiezoMUMPs process of MEMSCAP (Durham, NC, USA).

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Nastro, Alessandro, Marco Ferrari, Libor Rufer, Skandar Basrour, and Vittorio Ferrari. "Piezoelectric MEMS Acoustic Transducer with Electrically-Tunable Resonant Frequency." Micromachines 13, no. 1 (January 8, 2022): 96. http://dx.doi.org/10.3390/mi13010096.

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The paper presents a technique to obtain an electrically-tunable matching between the series and parallel resonant frequencies of a piezoelectric MEMS acoustic transducer to increase the effectiveness of acoustic emission/detection in voltage-mode driving and sensing. The piezoelectric MEMS transducer has been fabricated using the PiezoMUMPs technology, and it operates in a plate flexural mode exploiting a 6 mm × 6 mm doped silicon diaphragm with an aluminum nitride (AlN) piezoelectric layer deposited on top. The piezoelectric layer can be actuated by means of electrodes placed at the edges of the diaphragm above the AlN film. By applying an adjustable bias voltage Vb between two properly-connected electrodes and the doped silicon, the d31 mode in the AlN film has been exploited to electrically induce a planar static compressive or tensile stress in the diaphragm, depending on the sign of Vb, thus shifting its resonant frequency. The working principle has been first validated through an eigenfrequency analysis with an electrically induced prestress by means of 3D finite element modelling in COMSOL Multiphysics®. The first flexural mode of the unstressed diaphragm results at around 5.1 kHz. Then, the piezoelectric MEMS transducer has been experimentally tested in both receiver and transmitter modes. Experimental results have shown that the resonance can be electrically tuned in the range Vb = ±8 V with estimated tuning sensitivities of 8.7 ± 0.5 Hz/V and 7.8 ± 0.9 Hz/V in transmitter and receiver modes, respectively. A matching of the series and parallel resonant frequencies has been experimentally demonstrated in voltage-mode driving and sensing by applying Vb = 0 in transmission and Vb = −1.9 V in receiving, respectively, thereby obtaining the optimal acoustic emission and detection effectiveness at the same operating frequency.

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Bugea, Calogero, Federico Berton, Antonio Rapani, Roberto Di Lenarda, Giuseppe Perinetti, Eugenio Pedullà, Antonio Scarano, and Claudio Stacchi. "In Vitro Qualitative Evaluation of Root-End Preparation Performed by Piezoelectric Instruments." Bioengineering 9, no. 3 (March 2, 2022): 103. http://dx.doi.org/10.3390/bioengineering9030103.

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Although the application of ultrasounds in endodontic surgery allows for effective debridement of the root canal, incorrect device setting or inefficient tips seem to generate cracks during root-end retropreparation. The primary aim of this in vitro study was to establish the presence, or absence, of a correlation between ultrasonic root-end preparation and the formation of cracks. The present study was conducted on human teeth, extracted for periodontal reasons. After root canal treatment, roots were resected 3 mm from the anatomical apex by using a high-speed handpiece and carbide burs. The resected teeth were retroprepared by using an ultrasonic tip (R1D, Piezomed, W&H, Bürmoos, Austria), setting the piezoelectric device at maximum power available for the tip. Time required for the retropreparation was recorded. Before and after retropreparation, all roots were photographed under a stereomicroscope and analyzed by two different operators to evaluate: (a) the presence and extension of dentinal cracks and (b) the morphology of root-end preparation. Finally, piezoelectric tips were analyzed by scanning electron microscopy (SEM) to evaluate morphologic changes after use. A total of 43 single roots (33 with one root canal, 10 with two root canals) were treated. Average preparation time was 1 minute and 54 seconds. None of the roots without initial cracks developed new cracks after retropreparation. Quality of the preparation margins was fairly equal among the prepared specimens. None of the piezoelectric tips broke during instrumentation, and SEM analysis showed minimal surface wear of the tips after performing 11 retropreparations. Within the limits of the present study, the tested piezoelectric system does not seem to represent a major cause for root crack formation. Pre-existing cracks may expand after ultrasound root-end preparation.

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Novokhatniy, V., O. Matyash, and I. Usenko. "ENERGY SAVING THROUGH IMPROVED TOPOLOGY OF THE CITY WATER NETWORK." Municipal economy of cities 1, no. 175 (April 3, 2023): 99–104. http://dx.doi.org/10.33042/2522-1809-2023-1-175-99-104.

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This article compares the operation of the existing water supply system in the city Kremenchuk, Poltava region, namely the giving-distributive complex (GDC), which includes the main water network and the pumping station of the 2-nd lift, with the GDC, in which the topological structure has been improved by introducing a new section of the network. During the operation of the GDC, the tasks of repairing or replacing pipes of individual sections the water network constantly arise. At the same time, attention should also be paid to the topological structure of the water network during its reconstruction. The need to improve the topological structure is clearly seen after performing hydraulic calculations and building piezometric maps. For comparison, piezometric maps need to build before and after the reconstruction of the water network. At the nodal points of the network, a geodetic mark, free pressure and piezometric mark are shown. Considering that water moves from a larger piezometric mark to a smaller one, the directions of water movement and water network nodes with minimal free pressures are determined. At the same time, flaws in the topological structure are found on the piezomap, which should be eliminated in order to increase its dependebility. It is known that dependebility includes 3 components: reliability, maintainability and durability. Durability is ensured by the choice of pipe material during design. If we take into account simultaneously reliability and maintainability, then a complex indicator should be used, namely, the availability factor Ka. It estimates the probability that at any given time the section of water network is in working condition. According to the topological structure, the water network of the city should be looped and have more connections between nodes. But in practice, this principle can not always be maintained, given the planning structure of the streets the city. Graphical representation of hydraulic calculations using piezomaps allows you to identify overloaded sections of the water network and increase its dependebility. When improving the topological structure, it is necessary to use the prof. Novokhatniy principle, namely, new sections must be introduced so that they unite the existing nodes of the existing water network. Hydraulic calculations have shown that by improving the topological structure of the water network the city Kremenchuk, the annual energy saving is about 452 thousand kWh, which corresponds to a saving of about UAH 2.7 million per year (at the cost of electricity 6 UAH per 1 kWh). Keywords: water supply system, giving-distributive complex, water network, topology, energy saving.

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Strnad, Nicholas A., Daniel M. Potrepka, Brendan M. Hanrahan, Glen R. Fox, Ronald G. Polcawich, Jeffrey S. Pulskamp, Ryan R. Knight, and Ryan Q. Rudy. "Extending atomic layer deposition for use in next-generation piezoMEMS: Review and perspective." Journal of Vacuum Science & Technology A 41, no. 5 (July 11, 2023). http://dx.doi.org/10.1116/6.0002431.

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The objective of this work is to describe the current state of the rapidly evolving field of 3D piezoelectric microelectromechanical systems (piezoMEMS), and where it needs to go to fully leverage the potential performance benefits offered by atomic layer deposition (ALD). We define 3D piezoMEMS as the application of piezoelectric ALD films to 3D, high aspect-ratio, mechanically pliable structures. Since there are so few existing reports of 3D piezoMEMS, a literature review of ALD films applied to conventional microelectromechanical system (MEMS) devices is given. ALD processes for piezoelectric thin films are reviewed in the context of relevant applications such as transducers and actuators. Examples include aluminum nitride, hafnium zirconate, doped-hafnia, lead zirconate-titanate, lead hafnate, and lead hafnate-titanate. New concepts for ALD-enabled 3D piezoMEMS actuators are presented with supporting theoretical calculations that show that chip-scale mechanical work densities could be improved by ≫10× compared to conventional planar piezoMEMS. 3D fabrication methods are also discussed, while the future needs of atomic layer processing are highlighted.

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Ni, Shu, Evert Houwman, Gertjan Koster, and Guus Rijnders. "On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Si." Applied Physics A 129, no. 4 (March 21, 2023). http://dx.doi.org/10.1007/s00339-023-06447-x.

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Abstract:

AbstractThe rapid advent of the piezoelectric microelectromechanical systems (PiezoMEMS) field has created a tremendous demand for low hysteretic piezoelectric thin films on Si. In this work, we present the integration of epitaxial Pb(Mg0.33Nb0.67)O3-PbTiO3 (PMN-PT) thin films with Si to enable device fabrication using state of the art methods. With optimized buffer layers and electronic contacts, high-quality low hysteretic PMN-PT thin films are integrated with Si, which is a significant stride towards employing PMN-PT thin film for PiezoMEMS devices. It is found that the processing of the necessary SrTiO3 buffer layer is crucial to achieve the growth of phase-pure perovskite PMN-PT layers on Si. Furthermore, we propose the engineering of the electronic contact for the PMN-PT-on-Si capacitors to obtain low hysteretic polarization and displacement responses.

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Tiwari, Sudhanshu, Ajay Dangi, and Rudra Pratap. "A tip-coupled, two-cantilever, non-resonant microsystem for direct measurement of liquid viscosity." Microsystems & Nanoengineering 9, no. 1 (March 23, 2023). http://dx.doi.org/10.1038/s41378-023-00483-6.

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AbstractWe report a non-resonant piezoelectric microelectromechanical cantilever system for the measurement of liquid viscosity. The system consists of two PiezoMEMS cantilevers in-line, with their free ends facing each other. The system is immersed in the fluid under test for viscosity measurement. One of the cantilevers is actuated using the embedded piezoelectric thin film to oscillate at a pre-selected non-resonant frequency. The second cantilever, the passive one, starts to oscillate due to the fluid-mediated energy transfer. The relative response of the passive cantilever is used as the metric for the fluid’s kinematic viscosity. The fabricated cantilevers are tested as viscosity sensors by carrying out experiments in fluids with different viscosities. The viscometer can measure viscosity at a single frequency of choice, and hence some important considerations for frequency selection are discussed. A discussion on the energy coupling between the active and the passive cantilevers is presented. The novel PiezoMEMS viscometer architecture proposed in this work will overcome several challenges faced by state-of-the-art resonance MEMS viscometers, by enabling faster and direct measurement, straightforward calibration, and the possibility of shear rate-dependent viscosity measurement.

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Trolier-McKinstry, Susan, Wanlin Zhu, Betul Akkopru-Akgun, Fan He, Song Won Ko, Charalampos Fragkiadakis, and Peter Mardilovich. "Reliability of piezoelectric films for MEMS." Japanese Journal of Applied Physics, September 1, 2023. http://dx.doi.org/10.35848/1347-4065/acf5f8.

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Abstract Thin films based on PbZr1-xTixO3 and K1-xNaxNbO3 are increasingly being commercialized in piezoelectric microelectromechanical systems (MEMS) due to the comparatively low drive voltages required relative to bulk actuators, as well as the facile approach to making sensor or actuator arrays. As these materials are incorporated into devices, it is critically important that they operate reliably over the lifetime of the system. This paper discusses some of the factors controlling the electrical and electromechanical reliability of PZT-based piezoMEMS films. In particular, it will be shown the gradients in the Zr/Ti ratio through the depth of the films are useful in increasing the lifetime of the films under DC electrical stresses.

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Journal articles on the topic 'PiezoMEMS'

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