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Relevant bibliographies by topics / Photovoltaic Devices - Semiconductor Nanocrystals

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Academic literature on the topic 'Photovoltaic Devices - Semiconductor Nanocrystals'

Author: Grafiati

Published: 7 September 2023

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Journal articles on the topic "Photovoltaic Devices - Semiconductor Nanocrystals"

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Qiao, Fen. "Semiconductor Nanocrystals for Photovoltaic Devices." Materials Science Forum 852 (April 2016): 935–38. http://dx.doi.org/10.4028/www.scientific.net/msf.852.935.

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Recently, photovoltaic devices based on colloidal semiconductor nanocrystals (NCs) have attracted a great interest due to their flexible synthesis with tunable band gaps and shape-dependent optical and electronic properties. However, the surface of NCs typically presents long chain with electrically insulating organic ligands, which hinder the device applications for NCs. So the major challenge of NCs for photovoltaic devices application is to decrease the inter NC space and the height of the tunnel barriers among NCs, therefore increase the transport properties of NCs. In this article, recent development of colloidal semiconductor NCs and possible routes for improving transport properties of colloidal NCs were reviewed. Among those methods, the thermal annealing approach provides a simple and cost-effective way to fabricate superlattice and to decrease the inter-space among NCs, which may be used for the preparation of other nanocrystalline superstructure and functional devices.

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Lin, Weyde M. M., Maksym Yarema, Mengxia Liu, Edward Sargent, and Vanessa Wood. "Nanocrystal Quantum Dot Devices: How the Lead Sulfide (PbS) System Teaches Us the Importance of Surfaces." CHIMIA International Journal for Chemistry 75, no. 5 (May 28, 2021): 398–413. http://dx.doi.org/10.2533/chimia.2021.398.

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Semiconducting thin films made from nanocrystals hold potential as composite hybrid materials with new functionalities. With nanocrystal syntheses, composition can be controlled at the sub-nanometer level, and, by tuning size, shape, and surface termination of the nanocrystals as well as their packing, it is possible to select the electronic, phononic, and photonic properties of the resulting thin films. While the ability to tune the properties of a semiconductor from the atomistic- to macro-scale using solution-based techniques presents unique opportunities, it also introduces challenges for process control and reproducibility. In this review, we use the example of well-studied lead sulfide (PbS) nanocrystals and describe the key advances in nanocrystal synthesis and thin-film fabrication that have enabled improvement in performance of photovoltaic devices. While research moves forward with novel nanocrystal materials, it is important to consider what decades of work on PbS nanocrystals has taught us and how we can apply these learnings to realize the full potential of nanocrystal solids as highly flexible materials systems for functional semiconductor thin-film devices. One key lesson is the importance of controlling and manipulating surfaces.

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Dalui, Amit, Ali Hossain Khan, Bapi Pradhan, Jayita Pradhan, Biswarup Satpati, and Somobrata Acharya. "Facile synthesis of composition and morphology modulated quaternary CuZnFeS colloidal nanocrystals for photovoltaic application." RSC Advances 5, no. 118 (2015): 97485–94. http://dx.doi.org/10.1039/c5ra18157g.

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Abulikemu, Mutalifu, Silvano Del Gobbo, Dalaver H. Anjum, Mohammad Azad Malik, and Osman M. Bakr. "Colloidal Sb2S3nanocrystals: synthesis, characterization and fabrication of solid-state semiconductor sensitized solar cells." Journal of Materials Chemistry A 4, no. 18 (2016): 6809–14. http://dx.doi.org/10.1039/c5ta09546h.

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Antimony sulfide nanocrystals of various shapes and different phases are synthesized using a colloidal hot-injection method, and the as-prepared nanocrystals are used as a light harvesting material in photovoltaic devices.

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Hou, Mingyue, Zhaohua Zhou, Ao Xu, Kening Xiao, Jiakun Li, Donghuan Qin, Wei Xu, and Lintao Hou. "Synthesis of Group II-VI Semiconductor Nanocrystals via Phosphine Free Method and Their Application in Solution Processed Photovoltaic Devices." Nanomaterials 11, no. 8 (August 15, 2021): 2071. http://dx.doi.org/10.3390/nano11082071.

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Solution-processed CdTe semiconductor nanocrystals (NCs) have exhibited astonishing potential in fabricating low-cost, low materials consumption and highly efficient photovoltaic devices. However, most of the conventional CdTe NCs reported are synthesized through high temperature microemulsion method with high toxic trioctylphosphine tellurite (TOP-Te) or tributylphosphine tellurite (TBP-Te) as tellurium precursor. These hazardous substances used in the fabrication process of CdTe NCs are drawing them back from further application. Herein, we report a phosphine-free method for synthesizing group II-VI semiconductor NCs with alkyl amine and alkyl acid as ligands. Based on various characterizations like UV-vis absorption (UV), transmission electron microscope (TEM), and X-ray diffraction (XRD), among others, the properties of the as-synthesized CdS, CdSe, and CdTe NCs are determined. High-quality semiconductor NCs with easily controlled size and morphology could be fabricated through this phosphine-free method. To further investigate its potential to industrial application, NCs solar cells with device configuration of ITO/ZnO/CdSe/CdTe/Au and ITO/ZnO/CdS/CdTe/Au are fabricated based on NCs synthesized by this method. By optimizing the device fabrication conditions, the champion device exhibited power conversion efficiency (PCE) of 2.28%. This research paves the way for industrial production of low-cost and environmentally friendly NCs photovoltaic devices.

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Prezioso, S., S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti. "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices." Applied Physics Letters 94, no. 6 (February 9, 2009): 062108. http://dx.doi.org/10.1063/1.3081410.

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Meng, Lingju, and Xihua Wang. "Doping Colloidal Quantum Dot Materials and Devices for Photovoltaics." Energies 15, no. 7 (March 27, 2022): 2458. http://dx.doi.org/10.3390/en15072458.

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Colloidal semiconductor nanocrystals have generated tremendous interest because of their solution processability and robust tunability. Among such nanocrystals, the colloidal quantum dot (CQD) draws the most attention for its well-known quantum size effects. In the last decade, applications of CQDs have been booming in electronics and optoelectronics, especially in photovoltaics. Electronically doped semiconductors are critical in the fabrication of solar cells, because carefully designed band structures are able to promote efficient charge extraction. Unlike conventional semiconductors, diffusion and ion implantation technologies are not suitable for doping CQDs. Therefore, researchers have creatively developed alternative doping methods for CQD materials and devices. In order to provide a state-of-the-art summary and comprehensive understanding to this research community, we focused on various doping techniques and their applications for photovoltaics and demystify them from different perspectives. By analyzing two classes of CQDs, lead chalcogenide CQDs and perovskite CQDs, we compared different working scenarios of each technique, summarized the development in this field, and raised our own future perspectives.

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Satta, Jessica, Andrea Pinna, Giorgio Pia, Luca Pilia, Carlo Maria Carbonaro, Daniele Chiriu, Luigi Stagi, Qader Abdulqader Abdullah, and Pier Carlo Ricci. "Stable CsPbBr3 Nanocrystals—Decorated Nanoporous Gold for Optoelectronic Applications." Crystals 12, no. 6 (June 18, 2022): 863. http://dx.doi.org/10.3390/cryst12060863.

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Halide perovskite colloidal nanocrystals have recently gained much attention thanks to their superior stability compared with their bulk counterpart and to their unique optical properties. In this paper, two systems combining nanocrystals and nanoporous gold are studied to create an optimal metal semiconductor heterojunction that can be used in photocatalysis and photovoltaic devices. The perovskite degradation phenomenon is observed when the nanoporous gold powder is mixed into the hexane suspension of nanocrystals, while the charge separation efficiency is increased by synthesizing the nanocrystals directly onto the gold porous structure. The analysis of the structural and optical properties evidences an energy transfer efficiency of 47%, along with the high structural stability of the hybrid system.

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Nozaki, Tomohiro, Yi Ding, and Ryan Gresback. "Plasma Synthesis of Silicon Nanocrystals: Application to Organic/Inorganic Photovoltaics through Solution Processing." Materials Science Forum 783-786 (May 2014): 2002–4. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2002.

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Silicon nanocrystals (SiNCs) have unique optical and electronic properties that are advantageous for semiconductor device applications and here their application to solar cell is presented. Free-standing, narrow size distribution SiNCs were synthesized by non-thermal plasma using silicon tetrachloride (SiCl4) successfully. Blended solution of as-produced SiNCs and P3HT, or Poly(3-hexylthiophene-2,5-diyl), was spin-casted to form bulk heterojunction solar cell devices. As the weight fraction of SiNCs increased up to 50 wt%, the short circuit current and the power conversion efficiency dramatically increased, while the open circuit voltage and the fill factor do not change significantly. The improved performance is attributable to increased probability of exciton dissociation at acceptor SiNCs and donor P3HT interface.

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Kovalenko, Maksym V., Loredana Protesescu, and Maryna I. Bodnarchuk. "Properties and potential optoelectronic applications of lead halide perovskite nanocrystals." Science 358, no. 6364 (November 9, 2017): 745–50. http://dx.doi.org/10.1126/science.aam7093.

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Semiconducting lead halide perovskites (LHPs) have not only become prominent thin-film absorber materials in photovoltaics but have also proven to be disruptive in the field of colloidal semiconductor nanocrystals (NCs). The most important feature of LHP NCs is their so-called defect-tolerance—the apparently benign nature of structural defects, highly abundant in these compounds, with respect to optical and electronic properties. Here, we review the important differences that exist in the chemistry and physics of LHP NCs as compared with more conventional, tetrahedrally bonded, elemental, and binary semiconductor NCs (such as silicon, germanium, cadmium selenide, gallium arsenide, and indium phosphide). We survey the prospects of LHP NCs for optoelectronic applications such as in television displays, light-emitting devices, and solar cells, emphasizing the practical hurdles that remain to be overcome.

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Dissertations / Theses on the topic "Photovoltaic Devices - Semiconductor Nanocrystals"

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Kinder, Erich W. "Fabrication of All-Inorganic Optoelectronic Devices Using Matrix Encapsulation of Nanocrystal Arrays." Bowling Green State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1339719904.

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López, Vidrier Julià. "Silicon Nanocrystal Superlattices for Light-Emitting and Photovoltaic Devices." Doctoral thesis, Universitat de Barcelona, 2015. http://hdl.handle.net/10803/334396.

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During the last decades, silicon nanocrystals have focused great attention due to the size-dependent physical properties they present, attributed to the quantum confinement effect. This, added to the bulk silicon compatibility with the well-established microelectronics technology and the low mining and manipulation costs this material presents, makes silicon a potential candidate for the growing photonics and optoelectronics fields. In particular, the tunnability of the electronic properties of silicon nanocrystals can be reached by controlling the nanocrystal size. This has been recently achieved by means of the superlattice approach, consisting of the alternated deposition of ultra-thin (2-4 nm) stoichiometric and silicon-rich layers of a given silicon-rich material. After a high-temperature annealing treatment, the silicon excess precipitates and crystallizes in the final form of nanocrystals, whose properties strongly depend on the fabrication process. Consequently, an ordered arrange of size-controlled nanocrystals (the superlattice) is obtained. In this Thesis Project, the structural, optical, electrical and electro-optical properties of silicon nanocrystal superlattices have been studied, using two different silicon-based materials as host matrices: silicon oxide and silicon carbide. The fabrication of these material systems has been carried out at different European institutions, specialists in the controlled deposition of nm¬thick films. Aiming at the nanocrystal superlattices characterization, different experimental techniques have been employed, which yield structural (transmission and scanning electron microscopies, X-ray diffraction), optical (optical absorption, photoluminescence and Raman scattering spectroscopies) and electrical / electro-optical (current versus voltage analysis in dark and under illumination, and electroluminescence, electro-optical response and light-beam induced photocurrent spectroscopies) information. From the material's point of view, the optimum structural properties that allow an almost perfect nanocrystal arrangement, size control and crystalline degree have been determined, always aiming at an optimum light emission and/or light absorption. Within this frame, fundamental studies have been performed to assess the crystalline degree of the nanostructures (confirming an atomic-thin transition layer between the crystalline nanocrystal core and the surrounding matrix), and to carefully inspect the controversial origin of luminescence within the nanocrystals when embedded in a silicon oxide matrix; as well, the structural conditions under which size-confinement of nanocrystals is reached when embedded in silicon carbide are reported. Once the best structural and optical properties from silicon nanocrystal superlattices were found, these material systems have been employed as active layers for light emitting and light converter (i.e. photovoltaic) devices. In oxide-based systems, the mechanisms that govern charge transport through the superlattices have been studied, and impact ionization has been hypothesized as the main electroluminescence excitation mechanism according to the experimental observations. In addition, the structural conditions (sublayer thicknesses, silicon-rich layer stoichiometry) that yield a maximum electroluminescence efficiency have been determined. Regarding silicon nanocrystals embedded in silicon carbide, a correlation has been established between the charge photogeneration and extraction when acting as an absorber material, which allowed assessing the structural conditions that maximize charge transport while minimizing the non-desirable recombination. Finally, via spectral response measurements, quantum confinement of excitons within silicon nanocrystals has been reported in silicon carbide matrix for the first time. In conclusion, the study on silicon nanocrystal superlattices developed within the present Thesis Project reveals the potential of silicon oxide as host matrix for silicon nanostructures to be used as light-emitting devices; instead, silicon carbide has proved a more suitable host material for photovoltaic applications, which sheds light to the future application of silicon nanocrystals as the top cell of an all-Si tandem cell.
Els nanocristalls de silici han esdevingut objecte d'estudi durant l'últim quart de segle, degut a què presenten, a causa de l'efecte de confinament quàntic, unes propietats físiques dependents de la seva mida. A més, la compatibilitat del silici massiu amb la ben establerta tecnologia microelectrònica juga en favor de la seva utilització i el seu desenvolupament per a futures aplicacions en el camp de la fotònica i l'optoelectrónica. El control del creixement de nanocristalls de silici es pot dur a terme mitjançant el dipòsit de superxarxes d'entre 2 i 4 nm de gruix, on capes de material estequiomètric basat en silici s'alternen amb altres de material ric en silici. Un posterior procés de recuit a alta temperatura permet la precipitació de l'excés de silici i la seva cristal.lització, tot originant una xarxa ordenada de nanocristalls de silici de mida controlada. En aquesta Tesi, s'han estudiat les propietats estructurals, òptiques, elèctriques i electro-òptiques de superxarxes de nanocristalls de silici embeguts en dues matrius diferents: òxid de silici i carbur de silici. Amb tal objectiu, s'han emprat tot un seguit de tècniques experimentals, que comprenen la caracterització estructural (microscòpia electrònica de transmissió i d'escombrat, difracció de raigs X), òptica (espectroscòpies d'absorció òptica, de fotoluminescència i dispersió Raman) i elèctrica / electro-òptica (caracterització intensitat-voltatge en foscor o sota il.luminació, electroluminescència, resposta electro-òptica), entre d'altres. Des del punt de vista del material, s'han estudiat les propietats estructurals òptimes per tal d'obtenir un perfecte ordenament en la xarxa de nanocristalls, una major qualitat cristal.lina i unes propietats d'emissió òptimes. L'optimització del material s'ha dut a terme en vistes a la seva utilització com a capa activa dins de dispositius emissors de llum i fotovoltaics, l'eficiència dels quals ha estat monitoritzada segons els diferents paràmetres estructurals (gruix de les capes nanomètriques involucrades, estequiometria, temperatura de recuit). Finalment, els nanocristalls de silici embeguts en òxid de silici han demostrat un major rendiment com a emissors de llum, mentre que una matriu de carbur de silici beneficia les propietats d'absorció i extracció (fotovoltaiques) del sistema.

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Cattley, Christopher Andrew. "Quaternary nanocrystal solar cells." Thesis, University of Oxford, 2016. http://ora.ox.ac.uk/objects/uuid:977e0f75-e597-4c7a-8f72-6a26031f8f0b.

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This thesis studies quaternary chalcogenide nanocrystals and their photovoltaic applications. A temperature-dependent phase change between two distinct crystallographic phases of stoichiometric Cu₂ZnSnS₄ is investigated through the development of a one pot synthesis method. Characterisation of the Cu₂ZnSnS₄ nanocrystals was performed using absorption spectroscopy, transmission electron microscopy (TEM) and powder X-ray diffraction (XRD). An investigation was conducted into the effects of using hexamethyldisilathiane (a volatile sulphur precursor) in the nucleation of small (<7nm), mono-dispersed and solution-stable quaternary Cu₂ZnSnS₄ nanocrystals. A strategy to synthesize high quality thermodynamically stable kesterite Cu₂ZnSnS₄ nanocrystals is established, which subsequently enabled the systematic study of Cu₂ZnSnS₄ nanocrystal formation mechanisms, using optical characterization, XRD, TEM and Raman spectroscopy. Further studies employed scanning transmission electron microscopy (STEM) energy dispersive x-ray (EDX) mapping to examine the elemental spatial distributions of Cu₂ZnSnS₄ nanocrystals, in order to analyse their compositional uniformity. In addition, the stability of nanocrystals synthesised using alternative ligands is investigated using Fourier transform infrared spectroscopy, without solution based ligand substitution protocol is used to replace aliphatic reaction ligands with short, aromatic pyridine ligands in order to further improve Cu₂ZnSnS₄ colloid stability. A layer-by-layer spin coating method is developed to fabricate a semiconductor heterojunction, using CdS as an n-type window, which is utilised to investigate the photovoltaic properties of Cu₂ZnSnS₄ nanocrystals. Finally, three novel passivation techniques are investigated, in order to optimise the optoelectronic properties of the solar cells to the point where a power conversion efficiency (PCE) of 1.00±0.04% is achieved. Although seemingly modest when compared to the performance of leading devices (PCE>12%) this represents one of the highest obtained for a Cu₂ZnSnS₄ nanocrystal solar cell, fabricated completely under ambient conditions at low temperatures.

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Nemitz, Ian R. "Synthesis of Nanoscale Semiconductor Heterostructures for Photovoltaic Applications." Bowling Green State University / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1277087935.

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Chang, Jin. "Controlled synthesis of inorganic semiconductor nanocrystals and their applications." Thesis, Queensland University of Technology, 2013. https://eprints.qut.edu.au/63960/1/Jin_Chang_Thesis.pdf.

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This thesis is a comprehensive study of the synthesis of nanomaterials. It explores the synthetic methods on the control of the size, shape and phase of semiconductor nanocrystals. A number of important conclusions, including the mechanism behind crystal growth and the structure-relationship, have been drawn through the experimental and theoretical investigation. The synthesized nanocrystals have been tested for applications in gas sensing, photocatalysis and solar cells, which exhibit considerable commercialization potential.

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JANA, SOURAV KANTI. "Light harvesting methods in photovoltaic devices with superficial treatments." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2012. http://hdl.handle.net/10281/28621.

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Photovoltaics is fast emerging as an attractive renewable energy technology due to concerns of global warming, pollution and scarcity of fossil fuels supplies. However to compete in the global energy market, solar cells need to be cheaper and more energy efficient. Silicon is the favourite semiconductor used in solar photovoltaic cells because of its abandoned in nature, well established technology and non toxicity. But due to its indirect band gap, silicon is poor absorber of light and theoretical limiting efficiency of single junction wafer based silicon solar cells is ~31% which is called Shockley Queisser limit. But up to now the maximum achievable efficiency in laboratory for single crystal single junction silicon solar cells is ~ 24.7%. So far the cost of the wafer based silicon photovoltaics is high. Also thin film cells play an important role in low cost photvoltaics, but efficiency of the cost reduced cells is lower compared to wafer based cells. So light trapping into photovoltaic cells is a great issue inorder to increase the carrier generation inside the active layer of both bulk as well as thin film cells with out disturbing their fabrication technology. There many light harvesting methods; among them Surface Plasmon method using metal nanoparticles and spectrum downshifting method using nanocrystals are discussed here. Metal nanoparticles support surface plamson when light is incident on them, which cause the scatter light into the underlying substrate. This process is realized on standard silicon solar cells. The feasible light scattering related enhancement was examined using spectral response and I-V measurements. Relative increases of the total delivered power under simulated solar irradiation were observed for cells both with and without antireflection coating using both silver and gold nanoparticles. The relative enhancement of External Quantum Efficiency derived from the spectral response measurements was observed for both the silicon cells. The better results obtained from both spectral response and I-V measurements were ascribed in the case of cells without antireflection coating. The results from I-V measurements under Air Mass 1.5 irradiation on the cells (without antireflection coating) correspond to a clear increase of the short circuit current due to both silver (relative increase of 7.5%) and gold (relative increase of 6.1%) nanoparticles. Also there is a relative enhancement (1.5%) of short circuit current was ascribed in the cells (with antireflection coating). Further realization of this method on copper indium gallium selenide based thin film solar cells attributed the enhancement of external quantum efficiency in the red wavelength region where these cells have already a poor spectral response. Spectral downshifting method by the nanocrystals was investigated on the silicon based solar cells. Down shifting of photons on the silicon solar cells is realized by the absorption and emission property of the manganese doped zinc sulfide nanocrystals. The variation of band gap and photoluminescence intensity of different nanocrystals due to different doping concentration was observed. Relative enhancement of External Quantum Efficiency has been attributed in UV region (where silicon solar cells have poor spectral response) due to lower concentration of nanocrystals. A strong concentration quenching effect which causes decrease of external quantum efficiency in both UV and visible region has been observed.

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Martínez, Montblanch Luis. "N-type bismuth sulfide coloidal nanocrystals and their application to solution-processed photovoltaic devices." Doctoral thesis, Universitat Politècnica de Catalunya, 2014. http://hdl.handle.net/10803/284207.

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Durante las últimas décadas, la energía solar fotovoltaica se ha convertido en una tecnología de creciente importancia para satisfacer las necesidades energéticas actuales sin sacrificar las futuras generaciones. Las células solares tradicionales basadas en silicio llevan asociados altos costes, tanto en materia prima como en su fabricación. Sin embargo, las tecnologías alternativas como las células solares orgánicas ofrecen prometedoras ventajas de bajo coste y fabricación, a expensas de inestabilidad química. Los nanocristales inorgánicos coloidales han atraído una creciente atención, debido a su combinación única de estabilidad química, aprovechamiento pancromático de la energía solar y procesado en disolución. No obstante, los semiconductores nanocristalinos más habituales generan dudas en cuanto a su aplicabilidad, debido a la presencia de metales pesados tóxicos (como el plomo y el cadmio). Además, muchos de estos materiales son tipo p y se usan junto con semiconductores de tipo n de "bandgap" ancho, que no contribuyen a la generación de fotocorriente. El campo de semiconductores nanocristalinos no tóxicos con niveles energéticos apropiados, alta absorción óptica y "bandgap" adecuado para el aprovechamiento de la energía solar aún está por explorar. El objetivo de esta tesis es investigar el potencial de los nanocristales de sulfuro de bismuto para ser empleados como nanomateriales no tóxicos tipo n para un aprovechamiento eficiente de la energía solar. En el Capítulo 2 se presenta un estudio detallado de las propiedades físico-químicas y electro-ópticas de los nanocristales de sulfuro de bismuto. Éstos son semiconductores tipo n y tienen unos niveles energéticos y "bandgap" apropiados para un aprovechamiento eficiente de la energía solar. Por tanto, los nanocristales de sulfuro de bismuto presentan el potencial para ser empleados como aceptores de electrones en células solares basadas en heterouniones con los mejores materiales investigados en la tercera generación fotovoltaica. Los nanocristales de sulfuro de bismuto se emplean en el Capítulo 3 como aceptores de electrones en células solares híbridas. Los materiales usados típicamente como aceptores de electrones así como los polímeros semiconductores no aprovechan la radiación infrarroja. Los nanocristales de sulfuro de bismuto pueden ser usados como materiales aceptores en células solares híbridas y así extender el rango de sensibilidad de las células solares basadas en P3HT a longitudes de onda en el rango del infrarrojo cercano. En el Capítulo 4 se investiga la nanomorfología y el rendimiento fotovoltaico de las células solares híbridas basadas en nanocristales de sulfuro de bismuto y polímeros semiconductores funcionalizados con tioles. Esta nueva clase de polímeros funcionalizados se enlaza a la superficie de los nanocristales de sulfuro de bismuto previniendo su aglomeración, así como presentan niveles de potencial de ionización más profundos y contribuyen a una mejor interacción electrónica entre el nanocompuesto orgánico-inorgánico. En el Capítulo 5, los nanocristales de sulfuro de bismuto se emplean conjuntamente con puntos cuánticos de sulfuro de plomo en dispositivos fotovoltaicos procesados en disolución basados en unión p-n totalmente inorgánicos. Este sistema abre la posibilidad de fabricar heterouniones tipo "bulk", una arquitectura menos limitada por el tiempo de vida de los portadores. De este modo, se puede explorar un rango más amplio de materiales inorgánicos nanocristalinos para dispositvos fotovoltaicos de tercera generación.
Photovoltaics has become a technology of increasing importance during the last decades as a platform to satisfy the energy needs of today without compromising future generations. Traditional silicon-based solar cells suffer from high material and fabrication costs. Alternative technologies such as organic photovoltaics offer promising low-cost material and processing advantages, however at the cost of chemical instability. Inorganic colloidal nanocrystals have attracted significant attention, due to the unique combination of chemical robustness, panchromatic solar harnessing and low-cost solution processability. However, the state-of-the-art nanocrystalline semiconductors raise some concerns regarding their suitability for industrial applications due to the presence of highly toxic heavy metals (such as lead or cadmium). Moreover, most of these materials are p-type, and are usually employed together with large bandgap n-type semiconductors that do not contribute to photocurrent generation. The field on non-toxic, electron-acceptor nanocrystalline semiconductors with appropriate energy levels, high optical absorption and bandgap suited to optimal solar harnessing still remains unexplored. The aim of this thesis is to investigate the potential of bismuth sulfide nanocrystals to be employed as environmental-friendly n-type nanomaterials for efficient solar harnessing. Chapter 2 presents an in-depth physicochemical and optoelectronic characterization of bismuth sulfide colloidal nanocrystals. Bismuth sulfide nanocrystals are n-type semiconductors and have the appropriate bandgap and energy levels for efficient solar harnessing. Therefore, bismuth sulfide nanocrystals have the potential to be employed as the electron accepting material in heterojunction-based solar cells with most high-performing materials investigated for third-generation photovoltaics. Bismuth sulfide nanocrystals are employed in Chapter 3 as electron accepting materials in hybrid organic-inorganic solar cells. Typical electron accepting materials and semiconducting polymers used in organic photovoltaics do not harness infrared radiation, thus limiting their solar harnessing potential. Bismuth sulfide nanocrystals can be used as electron accepting materials in hybrid organic-inorganic solar cells and extend the sensitivity range of P3HT-based solar cells into near-infrared wavelengths. Chapter 4 investigates the nanomorphology and photovoltaic performance of hybrid solar cells based on bismuth sulfide nanocrystals and thiol-functionalized semiconducting polymers. This novel class of functionalized polymers binds to the surface of bismuth sulfide nanocrystals, thus preventing nanocrystal agglomeration, shows deeper ionization potential levels and exhibits improved electronic interaction within the organic-inorganic nanocomposite. In Chapter 5, bismuth sulfide nanocrystals are employed together with lead sulfide quantum dots in p-n junction-based all-inorganic solution-processed photovoltaic devices. This system opens the possibility of fabricating all-inorganic solution-processed bulk heterojunctions, a device architecture where requirements on carrier lifetime are eased. This way, a broader range of inorganic nanocrystalline materials can be explored in the quest for novel non-toxic third-generation photovoltaics

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Holder, Jenna Ka Ling. "Quantum structures in photovoltaic devices." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:d23c2660-bdba-4a4f-9d43-9860b9aabdb8.

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A study of three novel solar cells is presented, all of which incorporate a low-dimensional quantum confined component in a bid to enhance device performance. Firstly, intermediate band solar cells (IBSCs) based on InAs quantum dots (QDs) in a GaAs p-i-n structure are studied. The aim is to isolate the InAs QDs from the GaAs conduction band by surrounding them with wider band gap aluminium arsenide. An increase in open circuit voltage (V_OC) and decrease in short circuit current (J_sc) is observed, causing no overall change in power conversion efficiency. Dark current - voltage measurements show that the increase in V_OC is due to reduced recombination. Electroreflectance and external quantum efficiency measurements attribute the decrease in J_sc primarily to a reduction in InGaAs states between the InAs QD and GaAs which act as an extraction pathway for charges in the control device. A colloidal quantum dot (CQD) bulk heterojunction (BHJ) solar cell composed of a blend of PbS CQDs and ZnO nanoparticles is examined next. The aim of the BHJ is to increase charge separation by increasing the heterojunction interface. Different concentration ratios of each phase are tested and show no change in J_sc, due primarily to poor overall charge transport in the blend. V_OC increases for a 30 wt% ZnO blend, and this is attributed largely to a reduction in shunt resistance in the BHJ devices. Finally, graphene is compared to indium tin oxide (ITO) as an alternative transparent electrode in squaraine/ C₇₀ solar cells. Due to graphene’s high transparency, graphene devices have enhanced J_sc, however, its poor sheet resistance increases the series resistance through the device, leading to a poorer fill factor. V_OC is raised by using MoO₃ as a hole blocking layer. Absorption in the squaraine layer is found to be more conducive to current extraction than in the C₇₀ layer. This is due to better matching of exciton diffusion length and layer thickness in the squaraine and to the minority carrier blocking layer adjacent to the squaraine being more effective than the one adjacent to the C₇₀.

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Cheng, Cheng. "Semiconductor colloidal quantum dots for photovoltaic applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:07baccd0-2098-4306-8a9a-49160ec6a15a.

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This thesis studies lead suphide (PbS) colloidal quantum dots and their photovoltaic applications. Different sizes of PbS QDs were synthesised and characterised using absorption spectroscopy and transmission electron microscopes. PbS QD Schottky junction devices were fabricated with AM1.5 power conversion efficiency up to 1.8 %. The Schottky junction geometry limits the device performance. A semiconductor heterojunction using ZnO as an electron acceptor was built and the device efficiency increased to 3%. By studying the light absorption and charge extraction profile of the bilayer device, the absorber layer has a charge extraction dead zone which is beyond the reach of the built-in electric field. Therefore, strategies to create a QD bulk heterojunction were considered to address this issue by distributing the junction interface throughout the absorber layer. However, the charge separation mechanism of the QD heterojunction is not clearly understood: whether it operates as an excitonic or a depleted p-n junction, as the junction operating mechanism determines the scale of phase separation in the bulk morphology. This study shows a transitional behaviour of the PbS/ZnO heterojunction from excitonic to depletion by increasing the doping density of ZnO. To utilise the excitonic mechanism, a PbS/ZnO nanocrystal bulk heterojunction was created by blending the two nanocrystals in solution such that a large interface between the two materials could facilitate fast exciton dissociation. However, the devices show poor performance due to a coarse morphology and formation of germinate pairs. To create a bulk heterojunction where a built-in electric field could assist the charge separation, a TiO₂ porous structure with the pore size matching with the depletion width was fabricated and successfully in-filled by PbS QDs. The porous device produces 5.7% power conversion efficiency, among one of the highest in literature. The enhancement comes from increased light absorption and suppression of charge recombination.

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Machui, Florian [Verfasser], and Christoph [Akademischer Betreuer] Brabec. "Formulation of Semiconductor Solutions for Organic Photovoltaic Devices / Florian Machui. Gutachter: Christoph Brabec." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2014. http://d-nb.info/1065005687/34.

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Books on the topic "Photovoltaic Devices - Semiconductor Nanocrystals"

1

Optical properties of semiconductor nanocrystals. Cambridge, UK: Cambridge Unviersity Press, 1998.

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Manasreh, Mahmoud Omar. Introduction to nanomaterials and devices. Hoboken, N.J: Wiley-Interscience, 2012.

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United States. National Aeronautics and Space Administration., ed. Radiative performance of rare earth garnet thin film selective emitters. [Washington, DC]: National Aeronautics and Space Administration, 1994.

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Meeting, Materials Research Society, and Symposium A, "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (2009 : San Francisco, Calif.)., eds. Amorphous and polycrystalline thin-film silicon science and technology--2009: Symposium held April 14-17, 2009, San Francisco, California, U.S.A. / editors, A. Flewitt ... [et al.]. Warrendale, Pa: Materials Research Society, 2009.

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Meeting, Materials Research Society, and Symposium A, "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (2010 : San Francisco, Calif.)., eds. Amorphous and polycrystalline thin-film silicon science and technology--2010: Symposium held April 5-9, 2009, San Francisco, California / editors, Qi Wang ... [et al.]. Warrendale, Pa: Materials Research Society, 2010.

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Wolf, E. L. Atoms, Molecules, Crystals and Semiconductor Devices. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0005.

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Properties of matter and of electronic devices are described, starting with Bohr’s model of the hydrogen atom. Motion of electrons in a periodic potential is shown to allow energy ranges with free motion separated by energy ranges where no propagating states are possible. Metals and semiconductors are described via Schrodinger’s equation in terms of their structure and their electrical properties. Energy gaps and effective masses are described. The semiconductor pn junction is described as a circuit element and as a photovoltaic device. We now extend Schrodinger’s method to more familiar matter, in the form of atoms, molecules and semiconductors. The solar cell, that produces electrical energy from Sunlight, in fact requires a sophisticated understanding of the semiconductor PN junction.

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Nathan, Arokia, Qi Wang, Andrew Flewitt, Jack Hou, and Shuichi Uchikoga. Amorphous and Polycrystalline Thin Film Silicon Science and Technology - 2009. University of Cambridge ESOL Examinations, 2014.

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Trzynadlowski, Andrzej M. Power Electronic Converters and Systems: Frontiers and Applications. Institution of Engineering & Technology, 2015.

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Power Electronic Converters and Systems: Frontiers and Applications. Institution of Engineering & Technology, 2016.

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Book chapters on the topic "Photovoltaic Devices - Semiconductor Nanocrystals"

1

Zhang, Chunfu, Jincheng Zhang, Xiaohua Ma, and Qian Feng. "High-Efficiency Semiconductor Photovoltaic Devices." In Semiconductor Photovoltaic Cells, 433–61. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9480-9_10.

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Jasieniak, Jacek J., Brandon I. MacDonald, and Paul Mulvaney. "Nanocrystals, Layer-by-Layer Assembly, and Photovoltaic Devices." In Nanomaterials, Polymers, and Devices, 357–94. Hoboken, NJ, USA: John Wiley & Sons, Inc, 2015. http://dx.doi.org/10.1002/9781118867204.ch14.

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Ray, S. K., N. Gogurla, and T. Rakshit. "Size- and Shape-Controlled ZnO Nanostructures for Multifunctional Devices." In Semiconductor Nanocrystals and Metal Nanoparticles, 39–94. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315374628-3.

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Khanna, Vandana, B. K. Das, Dinesh Bisht, Vandana, and P. K. Singh. "Estimation of Photovoltaic Cells Model Parameters using Particle Swarm Optimization." In Physics of Semiconductor Devices, 391–94. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_98.

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Tay, Y. Y., S. Li, and M. L. Liang. "Defect Mediated Photonic Behavior of ZnO Nanocrystals." In Semiconductor Photonics: Nano-Structured Materials and Devices, 83–85. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.83.

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Wei, Y., A. Gin, and M. Razeghi. "Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors." In Mid-infrared Semiconductor Optoelectronics, 515–45. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_16.

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Patil, Padmashri. "Thermal Sintering Improves the Short Circuit Current of Solar Cells Sensitized with CdTe/CdSe Core/Shell Nanocrystals." In Physics of Semiconductor Devices, 343–46. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_86.

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Singha, R. K., K. Das, S. Das, A. Dhar, and S. K. Ray. "Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering." In Semiconductor Photonics: Nano-Structured Materials and Devices, 89–91. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.89.

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Huy, P. T., and P. H. Duong. "Intense Photoluminescence and Photoluminescence Enhancement of Silicon Nanocrystals by Ultraviolet Irradiation." In Semiconductor Photonics: Nano-Structured Materials and Devices, 74–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.74.

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Shalygina, Olga A., Denis M. Zhigunov, Dmitrii A. Palenov, Victor Yu Timoshenko, Pavel K. Kashkarov, M. Zacharias, and Paul M. Koenraad. "Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation." In Semiconductor Photonics: Nano-Structured Materials and Devices, 196–98. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.196.

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Conference papers on the topic "Photovoltaic Devices - Semiconductor Nanocrystals"

1

Kim, Sung Jin, Won Jin Kim, Jangwon Seo, Alexander Cartwright, and Paras N. Prasad. "Functionalized semiconductor nanocrystal quantum dots for patterned, multilayered photovoltaic devices." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1121-n04-04.

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Yao, Y., B. Zhang, M. A. Green, G. Conibeer, and S. K. Shrestha. "Photovoltaic effect in Ge nanocrystals/c-silicon heterojunctions devices." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5616255.

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Kang, Ki Moon, Hyo-Won Kim, Il-Wun Shim, and Ho-Young Kwak. "Syntheses of Specialty Nanomaterials at the Multibubble Sonoluminescence Condition." In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-68320.

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In recent years, a large number of nano-size semiconductors have been investigated for their potential applications in photovoltaic cells, optical sensor devices, and photocatalysts [1, 2, 3]. Nano-size semiconductor particles have many interesting properties due mainly to their size-dependent electronic and optical properties. Appropriately, many speciality of nanomaterials such as CdS and ZnS semiconductor particles, and other metal oxides such as ZnO and lithium-titanate oxide (LTO) have been prepared. However, most of them were prepared with toxic reactants and/or complex multistep reaction processes. Particularly, it is quite difficult to produce LTO nanoparticles, since it typically requires wearisome conditions such as very high temperature over 1000 °C, long producing times, and so on. To overcome such problems, various core/shell type nanocrystals were prepared through different methods such as the hydrothermal synthetic method, microwave, and sonochemistry. Also many coating methods on inorganic oxide nanoparticles were tried for the preparations of various core-shell type nanocrystals. Sonoluminescence (SL) is a light emission phenomenon associated with the catastrophic collapse of a gas bubble oscillating under an ultrasonic field [4]. Light emission of single bubble sonoluminescence (SBSL) is characterized by picosecond flashes of the broad band spectrum extending to the ultraviolet [5, 6]. The bubble wall acceleration has been found to exceed 1011 g at the moment of bubble collapse. Recently observed results of the peak temperature and pressure from the sonoluminescing gas bubble in sulfuric acid solutions [9] were accurately predicted by the hydrodynamic theory for sonoluminescence phenomena [7, 10, 11, 12], which provides a clue for understanding sonochemical reactions inside the bubble and liquid layer adjacent to the bubble wall. Sonochemistry involves an application of sonoluminescence. The intense local heating and high pressure inside the bubbles and liquid adjacent bubble wall from such collapse can give rise to unusual effects in chemical reactions. The estimated temperature and pressure in the liquid zone around the collapsing bubble with equilibrium radius 5 μm, an average radius of bubbles generated in a sonochemical reactor at a driving frequency of 20 kHz with an input power of 179 W, is about 1000 °C and 500 atm, respectively. At the proper condition, a lot of transient bubbles are generated and collapse synchronistically to emit blue light when high power ultrasound is applied to liquid, and it is called multibubble sonoluminescence (MBSL). Figure 1 shows an experimental apparatus for MBSL with a cylindrical quartz cell, into which a 5 mm diameter titanium horn (Misonix XL2020, USA) is inserted [13]. The MBSL facilitates the transient supercritical state [14].in the liquid layer where rapid chemical reactions can take place. In fact, methylene blue (MB), which is one of a number of typical textile dyestuffs, was degraded very fast at the MBSL condition while MB does not degrade under simple ultrasonic irradiation [13]. MBSL has been proven to be a useful technique to make novel materials with unusual properties. In our study, various metal oxides such as ZnO powder [15], used as a primary reinforcing filler for elastomer, homogeneous Li4Ti5O12 nanoparticles [16], used for electrode materials, and core/shell nanoparticles such as CdS coating on TiO2 nanoparticles [17] and ZnS coating on TiO2 nanoparticles [18], which are very likely to be useful for the development of inorganic dye-sensitized solar cells, were synthesized through a one pot reaction under the MBSL condition. Figure 2 shows the XRD pattern of ZnO nanoparticles synthesized from zinc acetate dehydrate (Zn(CH3CO2)2 · 2H2O, 99.999%, Aldrich) in various alcohol solutions with sodium hydroxide (NaOH, 99.99%, Aldrich) at the MBSL condition. The XRD patterns of all powers indicate hexagonal zincite. The XRD pattern for the ZnO nanoparticles synthesized is similar to the ZnO powder produced by a modified sol-gel process and subsequent heat treatment at about 600 °C [19] as shown in Fig.3. The average particle diameter of ZnO powder is about 7 nm. A simple sonochemical method for producing homogeneous LTO nanoparticles, as shown schematically in Fig. 4. First, LiOH and TiO2 nanoparticles were used to prepare LiOH-coated TiO2 nanoparticles as shown in Fig.5. Second, the resulting nanoparticles were thermally treated at 500 °C for 1 hour to prepare LTO nanoparticles. Figure 6 shows a high resolution transmission electron microscope image of LTO nanoparticles having an average grain size of 30–40 nm. All the nanoparticle synthesized are very pure in phase and quite homogeneous in their size and shape. Recently we succeeded in synthesizing a supported nickel catalyst such as Ni/Al2sO3, MgO/Al2O3 and LaAlO3, which turned out to be effective for methane decomposition [20]. Sonochemistry may provide a new way to more rapidly synthesize many specialty nanoparticles with less waste [21]. This clean technology enables the preparation of new materials such as colloids, amorphous particles [22], and various alloys.

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Sethi, R., L. Kumar, P. K. Sharma, P. Mishra, and A. C. Pandey. "Synthesis and characterization of Cd1-xZnxS ternary nanocrystals." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472553.

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Bramati, Alberto, Maxime Joos, Chengjie Ding, Stefano Pierini, and Quentin Glorieux. "Integrated single photon sources with colloidal semiconductor nanocrystals (Conference Presentation)." In Quantum Nanophotonic Materials, Devices, and Systems 2019, edited by Mario Agio, Cesare Soci, and Matthew T. Sheldon. SPIE, 2019. http://dx.doi.org/10.1117/12.2533008.

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Guzelturk, Burak, Evren Mutlugun, Xiadong Wang, Kin Leong Pey, and Hilmi Volkan Demir. "Light-harvesting semiconductor quantum dot nanocrystals integrated on photovoltaic radial junction nanopillars." In 2010 23rd Annual Meeting of the IEEE Photonics Society (Formerly LEOS Annual Meeting). IEEE, 2010. http://dx.doi.org/10.1109/photonics.2010.5698907.

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Dutta, P. S. "High efficiency solar photovoltaic and thermo-photovoltaic device technologies." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472646.

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Lipovskii, Andrey A., Elene V. Kolobkova, and Vladimir D. Petrikov. "Optical properties of novel phosphate glasses with embedded semiconductor nanocrystals." In International Conference on Advanced Optical Materials and Devices, edited by Andris Krumins, Donats K. Millers, Andris R. Sternberg, and Janis Spigulis. SPIE, 1997. http://dx.doi.org/10.1117/12.266551.

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Lhuillier, Emmanuel, Bertille martinez, Clement Livache, Charlie Greboval, Audrey Chu, and nicolas goubet. "Designing Photovoltaic Devices Using HgTe Nanocrystals for SWIR and MWIR Detection." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.ngfm.2019.032.

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Lhuillier, Emmanuel, Bertille martinez, Clement Livache, Charlie Greboval, Audrey Chu, and nicolas goubet. "Designing Photovoltaic Devices Using HgTe Nanocrystals for SWIR and MWIR Detection." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.nfm.2019.032.

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Reports on the topic "Photovoltaic Devices - Semiconductor Nanocrystals"

1

Author, Not Given. Improved Fabrication Methods and Materials for Advanced Photovoltaic and Semiconductor Devices. Office of Scientific and Technical Information (OSTI), June 2011. http://dx.doi.org/10.2172/1019282.

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