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Journal articles on the topic 'Photoresponses in thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Kleider, J. P., M. Gauthier, C. Longeaud, D. Roy, O. Saadane, and R. Brüggemann. "Spectral photoresponses and transport properties of polymorphous silicon thin films." Thin Solid Films 403-404 (February 2002): 188–92. http://dx.doi.org/10.1016/s0040-6090(01)01659-5.

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2

Takeda, Kazuhiko, Yutaka Harima, and Kazuo Yamashita. "Photoelectrochemical and optical properties of porphyrin thin films prepared by the electrolytic micelle disruption method." Canadian Journal of Chemistry 69, no. 2 (February 1, 1991): 192–97. http://dx.doi.org/10.1139/v91-901.

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Photoresponses for various porphyrin films prepared by the electrolytic micelle disruption (EMD) method have been investigated in the indium-tin oxide / porphyrin / I3, I / Pt cell. The EMD film of an n-type porphyrin, 5, 10, 15, 20-tetra(4-pyridyl)porphyrin (T(4-py)P), exhibited a clear optical filtering effect (OFE), while not for the EMD films of p-type porphyrins such as (5, 19, 15, 20-tetraphenylporphyrinato)zinc(II) (ZnTPP). For the EMD-ZnTPP film, the photocurrents at 500700 nm were remarkably enhanced by increasing the film thickness. These photoelectrochemical properties were explained in terms of the electrolyte-permeability of the EMD films, which were confirmed by the electrochemical measurements and electron microscopic observations. The high conversion efficiency of the EMD-ZnTPP film was explained on the same basis. The difference in the thickness dependence of OFE between T(4-Py)P films prepared by the EMD and physical vapor deposition method was elucidated by the differences in diffusion lengths of excitons and in widths of photoactive layers in the films. In addition, a modified version of the EMD method was described in conjunction with a morphology control of the porphyrin solids. Key words: porphyrin, organic thin film, photoresponse, micelle, electrochemistry.

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3

Mihailova, I., V. Gerbreders, Ē. Sļedevskis, A. Bulanovs, and V. Paškevičs. "UV Sensing Properties of ZnO Nanowires Grown on Glass by Rapid Thermal Oxidation of Zinc Films." Latvian Journal of Physics and Technical Sciences 51, no. 4 (August 1, 2014): 53–60. http://dx.doi.org/10.2478/lpts-2014-0024.

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Abstract The nanostructured ZnO thin films were successfully synthesized by rapid thermal oxidation of metallic zinc films without catalysts or additives. On the surface of thin films the formation of ZnO nanowires was observed. In the work, the optical and electrical parameters and photoresponses of the obtained ZnO thin films were investigated. Nanostructured thin films of the type have a promising potential for the use in optoelectronics, sensor technique and biomedical sciences

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4

Juagwon, Theerasak, Kittitat Subannajui, and Tanakorn Osotchan. "Different Photoresponses for Positive and Negative Biases of CuPc/C60 Heterojunction Nanostructures." Advanced Materials Research 1103 (May 2015): 61–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1103.61.

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Photoresponse characteristic from efficient exciton dissociated heterojunction based on copper phthalocyanine (CuPc) and fullerene (C60) layers was observed the different spectrum responses under positive and negative biases. The nanostructures of CuPc and C60 thin films were fabricated between transparent indium tin oxide (ITO) and aluminum (Al) electrodes. The 100 nm thick of CuPc and C60 layers were deposited on patterned ITO glass substrates by thermal evaporation with quartz thickness monitor. Photoresponses of the fabricated devices were investigated by current measuring as a function of wavelength in range of 400 to 700 nm. Measured current in Al/C60/CuPc/ITO structure when applied negative voltage to ITO electrode is higher than that of positive voltage case. Under monochromatic light, the photoresponse characteristic of Al/C60/CuPc/ITO structure under negative bias shows dominate response current peak at around 450 nm and double peaks in range of 500-700 nm originated from C60 and CuPc layers, respectively. These two response characteristics can be described by the combination of responses from Al/C60/ITO and Al/CuPc/ITO structures. The response current characteristics of Al/C60/ITO and Al/CuPc/ITO structures also agree with the optical absorptions of C60 and CuPc layers, respectively. By applying positive bias to Al/C60/CuPc/ITO structure, the photoresponse characteristic has only one peak at about 450 nm that is similar to the response in Al/C60/ITO structure only. This indicates that under positive bias, the photocurrent only from C60 layer can be observed.

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5

Takeda, Kazuhiko, Yutaka Harima, Seiichiro Yokoyama, and Kazuo Yamashita. "Preparation of Porphyrin Thin Films Using the Micelle Disruption Method and Their Photoresponses." Japanese Journal of Applied Physics 28, Part 2, No. 1 (January 20, 1989): L141—L143. http://dx.doi.org/10.1143/jjap.28.l141.

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6

NAGAMURA, TOSHIHIKO, ATSUSHI NAITO, IORI YOSHIDA, YU CHEN, and MICHAEL HANACK. "ALL-OPTICAL REFLECTANCE CONTROL BASED ON PHOTOINDUCED COMPLEX REFRACTIVE INDEX CHANGES IN GUIDED MODE THIN FILMS CONTAINING INDIUM OR GALLIUM PHTHALOCYANINES." Journal of Nonlinear Optical Physics & Materials 11, no. 03 (September 2002): 205–18. http://dx.doi.org/10.1142/s0218863502001061.

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Tetrasubstituted indium or gallium phthalocyanines and their dimers bridged with various ligands were dispersed in a polymer thin film, which was spin-coated on silver thin film vacuum-evaporated on a glass slide. All-optical reflectance control was achieved by complex refractive index changes upon photoexcitation of phthalocyanines by nanosecond laser in such a guided mode geometry. They gave rise in less than ns pulse width, and a few to a few tens of microseconds decay characteristic to the lifetime of the excited triplet state. Repeated and reversible reflectance changes were achieved. Axially bridged phthalocyanine dimers showed almost the same photoresponses as monomers.

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7

Pleshakov, I. V., D. A. Lazarev, A. I. Grachev, A. P. Paugurt, and S. G. Shulman. "Photoresponse of granular YBaCuO thin films." Superconductor Science and Technology 9, no. 3 (March 1, 1996): 155–60. http://dx.doi.org/10.1088/0953-2048/9/3/006.

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8

MAHROUG, A., B. MARI, M. MOLLAR, I. BOUDJADAR, L. GUERBOUS, A. HENNI, and N. SELMI. "STUDIES ON STRUCTURAL, SURFACE MORPHOLOGICAL, OPTICAL, LUMINESCENCE AND UV PHOTODETECTION PROPERTIES OF SOL–GEL Mg-DOPED ZnO THIN FILMS." Surface Review and Letters 26, no. 03 (March 24, 2019): 1850167. http://dx.doi.org/10.1142/s0218625x18501676.

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Undoped and magnesium-doped zinc oxide thin films were prepared by the sol–gel method. Results from X-ray diffraction indicated that the films exhibited a hexagonal wurtzite structure and were highly oriented along the [Formula: see text]-axis. The intensity of the (002) diffraction peak increased with increasing the Mg doping concentration. Also, Mg doping inhibited the growth of crystallite size which decreased from 46[Formula: see text]nm to 38[Formula: see text]nm with doping concentration. Morphological studies by atomic force microscopy (AFM) indicated the uniform thin film growth and the decreasing of grain size and surface roughness with Mg doping. Optical analysis showed that the average transmittance of all films was above 90% in the visible range and Mg doping has significantly enhanced the bandgap energy of ZnO. Two Raman modes assigned to [Formula: see text] and [Formula: see text] for the ZnO wurtzite structure were observed for all films. UV emission peak and three defect emission peaks in the visible region were observed by photoluminescence measurements at room temperature. The intensity ratio of UV emission to the visible emission increased with the Mg concentration. Photocurrent measurements revealed that all films presented the photoresponses with [Formula: see text]-type semiconducting behavior and their generated photocurrents were reduced by Mg doping. The prepared thin films of high quality with improved properties by Mg doping could be proposed to workers in the field of optoelectronic devices for using them as a strong candidate.

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9

Lee, Burtrand I., Zhicheng Cao, Wade N. Sisk, John Hudak, William D. Samuels, and Gregory J. Exarhos. "Photoresponse of Tb3+ doped phosphosilicate thin films." Materials Research Bulletin 32, no. 9 (September 1997): 1285–92. http://dx.doi.org/10.1016/s0025-5408(97)00101-3.

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10

Hegmann, F. A., and J. S. Preston. "Photoresponse of high Tc superconductor thin films." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1133–37. http://dx.doi.org/10.1139/p92-183.

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A fast photoresponse is observed in a current-biased epitaxial YBa2Cu3O7 thin-film bridge structure exposed to 100 ps laser pulses. A bolometric response, with a pulse width of the order of 10 ns, dominates at temperatures close to Tc and at high laser fluences. At lower temperatures and fluences, the observed transient response contains distinct fast and slow components. Preliminary results indicate a pulse width for the fast component less than 500 ps. Application of a small magnetic field perpendicular to the sample increases the amplitude of the slow component while leaving the fast component relatively unaffected. Comparison of these results with resistance versus temperature measurements in the same magnetic field suggests that the fast component is nonthermal in origin.

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11

Lindgren, Mikael, Marc Currie, Carlo Williams, Steven H. Moffat, Robert A. Hughes, Frank A. Hegmann, John S. Preston, Thomas Y. Hsiang, and Roman Sobolewski. "Picosecond photoresponse of YBa2Cu3O7−x thin films." Czechoslovak Journal of Physics 46, S2 (February 1996): 1111–12. http://dx.doi.org/10.1007/bf02583863.

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12

Zhu, Jiayi, Lin Zhang, Weidong Wu, Yang Cao, and Junhui He. "Fabrication of Graphene-Based Nanostructured Thin Films with Mid-Infrared Photoresponse Properties." International Journal of Nanoscience 13, no. 05n06 (October 2014): 1460008. http://dx.doi.org/10.1142/s0219581x14600084.

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Graphene shows great potential as an advanced building block for fabricating varied graphene based nanostructured films together with other metal and metal oxide nanomaterials. In the current work, a new approach was developed to fabricate flexible, transparent conductive films via layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) nanosheets. We further fabricated transparent conductive hybrid films via LbL assembly of oppositely charged RGO nanosheet and platinum ( Pt ) nanoparticle as well as silica ( SiO 2) nanoparticle. It was found that the graphene based nanostructured films showed different mid-infrared photoresponse properties. Moreover, the photoresponse performance could be manipulated by the power and distance between two electrodes.

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13

SERGEEV, A. V., and M. YU. REIZER. "PHOTORESPONSE MECHANISMS OF THIN SUPERCONDUCTING FILMS AND SUPERCONDUCTING DETECTORS." International Journal of Modern Physics B 10, no. 06 (March 15, 1996): 635–67. http://dx.doi.org/10.1142/s021797929600026x.

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The photoresponse of ordinary and high-T c superconductors depends critically on the hierarchy of relaxation times, such as the electron–phonon and phonon–electron scattering times, the time of phonon escape from a superconducting film and also the phonon return time. For thin films of cuprates, close to the superconducting transition the following components of transient response are identified. The picosecond photoresponse is attributed to the dynamics of nonequilibrium quasiparticles and Cooper pairs. The nanosecond response is described by the thermal boundary resistance (the Kapitza resistance) between a superconducting film and a substrate. The microsecond response is associated with the phonon diffusion in the substrate. Using experimental results, we deduce the characteristic time of electron–phonon relaxation and parameters of the film-substrate interface. The kinetic inductance photoresponse of superconductors with s- and d-wave pairing far below the superconducting transition is also calculated. We study parameters (responsivity, operating speed and noise equivalent power) of a nonequilibrium detector, in which only electron states are changed under the radiation, while the film phonons stay in thermodynamic equilibrium with the substrate. Our analysis demonstrates that the nonequilibrium superconducting detectors have essential advantages compared to superconducting bolometers and other detectors.

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14

Kassim, A., Z. Zainal, N. Saravanan, R. Vikneshwari, and S. Malathi. "Preparation and Studies of Electrodeposited CuSe Thin Films." Eurasian Chemico-Technological Journal 6, no. 2 (July 12, 2017): 107. http://dx.doi.org/10.18321/ectj598.

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Cathodic electrodeposition in the presence of sodium dodecyl-sulphate in aqueous solution was used to prepare CuSe thin film deposited on titanium substrates. The effect of deposition potential, concentration<br />and deposition time were studied to determine the optimum condition for the electrodeposition process. The films were characterized by X-ray diffractrometry. Scanning electron microscopy was used to study<br />the morphology of the deposits. The photoresponse of the films prepared was analysed using linear sweep voltammetry in the presence of sodium thiosulphate.

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15

Saini, Mahesh, Ranveer Singh, Anirban Mitra, and Tapobrata Som. "Photoresponse of pulsed laser deposited ZnO:Cu thin films." Solar Energy 207 (September 2020): 228–34. http://dx.doi.org/10.1016/j.solener.2020.06.072.

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16

Kolagani, Rajeswari M., M. A. Overby, V. N. Smolyaninova, A. Davidson, and D. E. Cox. "Nonbolometric photoresponse in (La,Pr)0.67Ca0.33MnO3 thin films." Applied Physics Letters 88, no. 5 (January 30, 2006): 052504. http://dx.doi.org/10.1063/1.2168687.

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17

Hegmann, F. A., R. A. Hughes, and J. S. Preston. "Picosecond photoresponse of epitaxial YBa2Cu3O7−δ thin films." Applied Physics Letters 64, no. 23 (June 6, 1994): 3172–74. http://dx.doi.org/10.1063/1.111329.

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18

Heusinger, M. A., A. D. Semenov, R. S. Nebosis, Y. P. Gousev, and K. F. Renk. "Nonthermal kinetic inductance photoresponse of thin superconducting films." IEEE Transactions on Appiled Superconductivity 5, no. 2 (June 1995): 2595–98. http://dx.doi.org/10.1109/77.403121.

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19

Ghosh, R., and D. Basak. "Composition dependent ultraviolet photoresponse in MgxZn1−xO thin films." Journal of Applied Physics 101, no. 11 (June 2007): 113111. http://dx.doi.org/10.1063/1.2743887.

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20

Shafa, Muhammad, Yi Pan, R. T. Ananth Kumar, and Adel Najar. "Photoresponse investigation of polycrystalline gallium antimonide (GaSb) thin films." AIP Advances 10, no. 3 (March 1, 2020): 035201. http://dx.doi.org/10.1063/1.5139056.

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21

Nie, Longying, Sheng Liu, Yaqin Chai, and Ruo Yuan. "Spray pyrolysis deposition and photoresponse of Cu2CdSnS4 thin films." Journal of Analytical and Applied Pyrolysis 112 (March 2015): 363–68. http://dx.doi.org/10.1016/j.jaap.2014.12.020.

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22

Yan Zi-Jie, Yuan Xiao, Xu Ye-Bin, Gao Guo-Mian, and Chen Chang-Le. "Transient photoresponse in Pr0.7Ca0.3MnO3 thin films at room temperature." Acta Physica Sinica 56, no. 10 (2007): 6080. http://dx.doi.org/10.7498/aps.56.6080.

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23

Liu, Kaisi, Bin Yao, Yongfeng Li, Zhanhui Ding, Zhenyu Xiao, Yuhong Jiang, Gang Wang, and Daocheng Pan. "Fabrication of Cu2MSnS4 (M = Co2+, Ni2+) nanocrystal thin films and their application in photodetectors." New Journal of Chemistry 41, no. 2 (2017): 685–91. http://dx.doi.org/10.1039/c6nj02576e.

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Cu₂CoSnS₄ and Cu₂NiSnS₄ nanocrystal thin films and selenized films are prepared using a simple and low-cost solution process, and demonstrated a strong and reversible photoresponse performance.

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24

SOGA, T., T. JIMBO, K. M. KRISHNA, and M. UMENO. "AMORPHOUS CARBON THIN FILMS FOR OPTOELECTRIC DEVICE APPLICATION." International Journal of Modern Physics B 14, no. 02n03 (January 30, 2000): 206–17. http://dx.doi.org/10.1142/s0217979200000200.

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Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor - a natural source, graphite and CH4/H2 mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

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25

Frenkel, A. "Photoresponse and Optical Detection with High Temperature Superconducting Thin Films." Materials Science Forum 130-132 (January 1993): 303–14. http://dx.doi.org/10.4028/www.scientific.net/msf.130-132.303.

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26

Nazir, Ghazanfar, M. Farooq Khan, Imtisal Akhtar, Kamran Akbar, Praveen Gautam, Hwayong Noh, Yongho Seo, Seung-Hyun Chun, and Jonghwa Eom. "Enhanced photoresponse of ZnO quantum dot-decorated MoS2 thin films." RSC Advances 7, no. 27 (2017): 16890–900. http://dx.doi.org/10.1039/c7ra01222e.

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27

Chongsri, Krisana, Chatpong Bangbai, Wicharn Techitdheera, and Wisanu Pecharapa. "Characterization and Photoresponse Propreties of Sn-doped ZnO Thin Films." Energy Procedia 34 (2013): 721–27. http://dx.doi.org/10.1016/j.egypro.2013.06.805.

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28

Rajeswaran, Bharathi, Inyalot Jude Tadeo, and Arun M. Umarji. "IR photoresponsive VO2 thin films and electrically assisted transition prepared by single-step chemical vapor deposition." Journal of Materials Chemistry C 8, no. 36 (2020): 12543–50. http://dx.doi.org/10.1039/d0tc02785e.

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29

Tsirlina, T., V. Lyakhovitskaya, S. Fiechter, and R. Tenne. "Study on preparation, growth mechanism, and optoelectronic properties of highly oriented WSe2 thin films." Journal of Materials Research 15, no. 12 (December 2000): 2636–46. http://dx.doi.org/10.1557/jmr.2000.0378.

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Recently, highly oriented WSe2 thin films, with the c axis of the crystallites perpendicular to the substrate, were reproducibly obtained by interposing a Ni/Cr thin layer between the substrate and a WO3 precursor film. In the present work the preparation conditions were varied to elucidate the growth mechanism of such films. A model for the growth mode is proposed. Based upon this analysis, WSe2 thin films with improved crystalline and electronic properties were obtained. The photoresponse spectrum for photoelectrochemical cells with the WSe2 electrode immersed into a selenosulfate solution was measured. Quantum efficiency of 0.1% was calculated from this spectrum.

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30

Lou, Shiyun, Changhua Zhou, Hongzhe Wang, Huaibin Shen, Gang Cheng, Zuliang Du, Shaomin Zhou, and Lin Song Li. "Annealing effects on the photoresponse properties of CdSe nanocrystal thin films." Materials Chemistry and Physics 128, no. 3 (August 2011): 483–88. http://dx.doi.org/10.1016/j.matchemphys.2011.03.035.

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31

Chertopalov, Sergii, and Vadym N. Mochalin. "Environment-Sensitive Photoresponse of Spontaneously Partially Oxidized Ti3C2 MXene Thin Films." ACS Nano 12, no. 6 (June 8, 2018): 6109–16. http://dx.doi.org/10.1021/acsnano.8b02379.

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32

Roy Moulik, Samik, Sudeshna Samanta, and Barnali Ghosh. "Photoresponse in thin films of WO3 grown by pulsed laser deposition." Applied Physics Letters 104, no. 23 (June 9, 2014): 232107. http://dx.doi.org/10.1063/1.4882658.

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33

Ingler, William B., John P. Baltrus, and Shahed U. M. Khan. "Photoresponse of p-Type Zinc-Doped Iron(III) Oxide Thin Films." Journal of the American Chemical Society 126, no. 33 (August 2004): 10238–39. http://dx.doi.org/10.1021/ja048461y.

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34

Li, K., R. Hsiao, and C. Tang. "Photoresponse of ion‐beam‐deposited Y‐Ba‐Cu‐O thin films." Journal of Applied Physics 68, no. 6 (September 15, 1990): 3043–46. http://dx.doi.org/10.1063/1.346397.

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35

He, Hongcai, Zhaoling He, Zhuolin Jiang, Jing Wang, Tao Liu, and Ning Wang. "A controllable photoresponse and photovoltaic performance in Bi4Ti3O12 ferroelectric thin films." Journal of Alloys and Compounds 694 (February 2017): 998–1003. http://dx.doi.org/10.1016/j.jallcom.2016.10.160.

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36

Fadzilah, A. N., K. Dayana, and Mohamad Rusop Mahmood. "Raman and Electrical Analysis of Iodine-Doped Amorphous Carbon Thin Films." Advanced Materials Research 667 (March 2013): 281–86. http://dx.doi.org/10.4028/www.scientific.net/amr.667.281.

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Iodine doped amorphous carbon (a-C: I) thin films were prepared by using Thermal Chemical Vapor Deposition (CVD) with deposition temperature ranging from 5000C to 7000C. The physical and electrical properties of deposited a-C:I thin films were characterized by Raman spectroscope and Solar Simulator system. The presence of 2 peaks known as Raman D peaks and Raman G peaks ensure the amorphous structure of carbon (C). As deposition temperature increase, the ID/IG ratio shows difference value, which indicates the effects of the temperature towards the a-C: I structures. An ohmic graph was obtained for the IV measurement, and the conductivity varies from 10-4 to 101 Scm-1. The photoresponse was also determined for all samples. As a reference, an undoped a-C thin film was prepared to differentiate the characteristic between a-C and a-C: I.

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37

Tadeo, Inyalot Jude, Emma P. Mukhokosi, Saluru B. Krupanidhi, and Arun M. Umarji. "Low-cost VO2(M1) thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture for IR photodetection." RSC Advances 9, no. 18 (2019): 9983–92. http://dx.doi.org/10.1039/c9ra00189a.

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38

Tadeo, Inyalot Jude, Saluru B. Krupanidhi, and Arun M. Umarji. "Enhanced phase transition and infrared photoresponse characteristics in VO2(M1) thin films synthesized by DC reactive sputtering on different substrates." Materials Advances 2, no. 11 (2021): 3726–35. http://dx.doi.org/10.1039/d1ma00047k.

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39

Nur Amalina, Muhamad, N. A. Rasheid, and Mohamad Rusop Mahmood. "The Surface Morphology and Electrical Properties of Nanostructured CuI Thin Films by Intermittently Sprayed Solution Concentration." Advanced Materials Research 576 (October 2012): 305–8. http://dx.doi.org/10.4028/www.scientific.net/amr.576.305.

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The CuI thin films were prepared by a spraying method with acetonitirile as a solvent and CuI as reagents. The parameter investigated in this research is the effect of spraying method either continuously or intermittently sprayed. The influence of spraying method and solution concentration on the surface morphology and electrical properties of CuI thin films were investigated by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and 2 point probe I-V measurement. Nanoparticle CuI was observed for all the thin films prepared. The EDX spectrum confirmed the existence of Cu and I elements. The resistivity of order 10-1 to 100 Ω cm was obtained for the CuI thin film deposited by the spraying technique. The CuI thin films also showed a photoresponse characteristic when measured under illumination condition. These results imply that the prepared CuI thin film deposited by spraying technique exhibit excellent conductivity with nanostructured particles seen.

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40

Özdoğan, Mehmet, Cem Çelebi, and Gökhan Utlu. "Mechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin films." Materials Science in Semiconductor Processing 107 (March 2020): 104863. http://dx.doi.org/10.1016/j.mssp.2019.104863.

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41

Elovaara, Tomi, Sayani Majumdar, Hannu Huhtinen, and Petriina Paturi. "Defect Induced Enhanced Low Field Magnetoresistance and Photoresponse in Pr0.6Ca0.4MnO3 thin Films." Physics Procedia 75 (2015): 62–69. http://dx.doi.org/10.1016/j.phpro.2015.12.010.

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42

Kakishita, K., S. Kondo, and T. Suda. "Photoresponse of zinc phosphide thin films grown by ionized cluster beam deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 121, no. 1-4 (January 1997): 175–78. http://dx.doi.org/10.1016/s0168-583x(96)00590-3.

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43

Kutes, Yasemin, Yuanyuan Zhou, James L. Bosse, James Steffes, Nitin P. Padture, and Bryan D. Huey. "Mapping the Photoresponse of CH3NH3PbI3 Hybrid Perovskite Thin Films at the Nanoscale." Nano Letters 16, no. 6 (May 26, 2016): 3434–41. http://dx.doi.org/10.1021/acs.nanolett.5b04157.

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44

Sharma, Parmanand, Abhai Mansingh, and K. Sreenivas. "Ultraviolet photoresponse of porous ZnO thin films prepared by unbalanced magnetron sputtering." Applied Physics Letters 80, no. 4 (January 28, 2002): 553–55. http://dx.doi.org/10.1063/1.1445480.

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45

Wu, Yan, Takahiko Tamaki, Tarja Volotinen, Lyubov Belova, and K. V. Rao. "Enhanced Photoresponse of Inkjet-Printed ZnO Thin Films Capped with CdS Nanoparticles." Journal of Physical Chemistry Letters 1, no. 1 (November 12, 2009): 89–92. http://dx.doi.org/10.1021/jz900008y.

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Schneider, Gi, W. Blau, E. Stangl, D. Bäuerle, P. G. Huggard, and W. Prettl. "Enhancement of Josephson photoresponse of granular high‐Tcsuperconductor thin films by deoxygenation." Applied Physics Letters 63, no. 20 (November 15, 1993): 2827–29. http://dx.doi.org/10.1063/1.110300.

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Schneider, Gi, P. G. Huggard, T. P. O'Brien, W. Blau, and W. Prettl. "Magnetic field dependence of Josephson photoresponse in high-Tc superconductor thin films." Solid State Communications 89, no. 8 (February 1994): 705–8. http://dx.doi.org/10.1016/0038-1098(94)90581-9.

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LAI, S., M. CHEN, YU N. KHANIN, K. S. NOVOSELOV, and D. V. ANDREEVA. "ENHANCEMENT OF REDUCED GRAPHENE OXIDE BOLOMETRIC PHOTORESPONSE VIA ADDITION OF GRAPHENE QUANTUM DOTS." Surface Review and Letters 28, no. 08 (July 17, 2021): 2140011. http://dx.doi.org/10.1142/s0218625x21400114.

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Reduced graphene oxide (rGO) has attracted interest in its potential application in large area photodetectors owing to its ease of manufacture and wideband optical absorbance. Here, we report that thin rGO films produced via vacuum filtration of GO followed by reduction by immersion in L-ascorbic acid are capable of sensing light through a bolometric mechanism. The photoresponse of these rGO thin films can be further enhanced by dropcasting graphene quantum dots (GQDs) on the rGO surface. These GQDs were observed to increase the opacity of the rGO film and hence its absorptivity of light, thereby enabling a significant increase in the photoresponse of the device.

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Fong, Chee Yong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, and Zainuriah Hassan. "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection." Microelectronics International 36, no. 1 (January 7, 2019): 8–13. http://dx.doi.org/10.1108/mi-12-2017-0074.

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Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

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Ganesh, T., S. Rajesh, and Francis P. Xavier. "Sol-Gel Preparation, Deposition and Characterization of Nanostructured Aluminium Doped Zinc Oxide." Journal of Nano Research 24 (September 2013): 96–106. http://dx.doi.org/10.4028/www.scientific.net/jnanor.24.96.

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Pure and Aluminium-doped ZnO (Zn1-xAlxO) x = 0 to 5 wt% thin films were deposited onto glass substrate by sol-gel spin coating method. The influence of various aluminium concentration in ZnO thin films on the structural, surface, optical and photoconducting properties were investigated. The GIXRD studies confirmed the polycrystalline nature with wurtzite structure of pure and Al doped ZnO films. Films with 1.5 % concentration of aluminium showed maximum absorption and transmission in the UV and visible regions respectively. The FESEM images showed crack free films with increasing grain boundaries upon doping. The average grain size is found to decrease due to aluminium doping. AFM images showed doped films with 1.5 % have better smoothness than other films. The photoconductivity measurements reveal that there is increase in the photocurrent compared to dark current for the Al doped ZnO. The photocurrent reaches its maximum value for ZnO: Al-1.5 % and then decreases upon increase in Al concentration. The photoresponse has slightly degraded upon aluminium doping onto ZnO. Temperature dependent conductivity shows that the thermal activation energy for the film decreases up to 1.5 % aluminium concentration and then increases for other concentrations in the temperature range 308 to 375K.

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