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Relevant bibliographies by topics / Photoresponses in thin films

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Academic literature on the topic 'Photoresponses in thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Photoresponses in thin films"

1

Kleider, J. P., M. Gauthier, C. Longeaud, D. Roy, O. Saadane, and R. Brüggemann. "Spectral photoresponses and transport properties of polymorphous silicon thin films." Thin Solid Films 403-404 (February 2002): 188–92. http://dx.doi.org/10.1016/s0040-6090(01)01659-5.

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Takeda, Kazuhiko, Yutaka Harima, and Kazuo Yamashita. "Photoelectrochemical and optical properties of porphyrin thin films prepared by the electrolytic micelle disruption method." Canadian Journal of Chemistry 69, no. 2 (February 1, 1991): 192–97. http://dx.doi.org/10.1139/v91-901.

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Photoresponses for various porphyrin films prepared by the electrolytic micelle disruption (EMD) method have been investigated in the indium-tin oxide / porphyrin / I3, I / Pt cell. The EMD film of an n-type porphyrin, 5, 10, 15, 20-tetra(4-pyridyl)porphyrin (T(4-py)P), exhibited a clear optical filtering effect (OFE), while not for the EMD films of p-type porphyrins such as (5, 19, 15, 20-tetraphenylporphyrinato)zinc(II) (ZnTPP). For the EMD-ZnTPP film, the photocurrents at 500700 nm were remarkably enhanced by increasing the film thickness. These photoelectrochemical properties were explained in terms of the electrolyte-permeability of the EMD films, which were confirmed by the electrochemical measurements and electron microscopic observations. The high conversion efficiency of the EMD-ZnTPP film was explained on the same basis. The difference in the thickness dependence of OFE between T(4-Py)P films prepared by the EMD and physical vapor deposition method was elucidated by the differences in diffusion lengths of excitons and in widths of photoactive layers in the films. In addition, a modified version of the EMD method was described in conjunction with a morphology control of the porphyrin solids. Key words: porphyrin, organic thin film, photoresponse, micelle, electrochemistry.

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Mihailova, I., V. Gerbreders, Ē. Sļedevskis, A. Bulanovs, and V. Paškevičs. "UV Sensing Properties of ZnO Nanowires Grown on Glass by Rapid Thermal Oxidation of Zinc Films." Latvian Journal of Physics and Technical Sciences 51, no. 4 (August 1, 2014): 53–60. http://dx.doi.org/10.2478/lpts-2014-0024.

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Abstract The nanostructured ZnO thin films were successfully synthesized by rapid thermal oxidation of metallic zinc films without catalysts or additives. On the surface of thin films the formation of ZnO nanowires was observed. In the work, the optical and electrical parameters and photoresponses of the obtained ZnO thin films were investigated. Nanostructured thin films of the type have a promising potential for the use in optoelectronics, sensor technique and biomedical sciences

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Juagwon, Theerasak, Kittitat Subannajui, and Tanakorn Osotchan. "Different Photoresponses for Positive and Negative Biases of CuPc/C60 Heterojunction Nanostructures." Advanced Materials Research 1103 (May 2015): 61–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1103.61.

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Photoresponse characteristic from efficient exciton dissociated heterojunction based on copper phthalocyanine (CuPc) and fullerene (C60) layers was observed the different spectrum responses under positive and negative biases. The nanostructures of CuPc and C60 thin films were fabricated between transparent indium tin oxide (ITO) and aluminum (Al) electrodes. The 100 nm thick of CuPc and C60 layers were deposited on patterned ITO glass substrates by thermal evaporation with quartz thickness monitor. Photoresponses of the fabricated devices were investigated by current measuring as a function of wavelength in range of 400 to 700 nm. Measured current in Al/C60/CuPc/ITO structure when applied negative voltage to ITO electrode is higher than that of positive voltage case. Under monochromatic light, the photoresponse characteristic of Al/C60/CuPc/ITO structure under negative bias shows dominate response current peak at around 450 nm and double peaks in range of 500-700 nm originated from C60 and CuPc layers, respectively. These two response characteristics can be described by the combination of responses from Al/C60/ITO and Al/CuPc/ITO structures. The response current characteristics of Al/C60/ITO and Al/CuPc/ITO structures also agree with the optical absorptions of C60 and CuPc layers, respectively. By applying positive bias to Al/C60/CuPc/ITO structure, the photoresponse characteristic has only one peak at about 450 nm that is similar to the response in Al/C60/ITO structure only. This indicates that under positive bias, the photocurrent only from C60 layer can be observed.

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Takeda, Kazuhiko, Yutaka Harima, Seiichiro Yokoyama, and Kazuo Yamashita. "Preparation of Porphyrin Thin Films Using the Micelle Disruption Method and Their Photoresponses." Japanese Journal of Applied Physics 28, Part 2, No. 1 (January 20, 1989): L141—L143. http://dx.doi.org/10.1143/jjap.28.l141.

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NAGAMURA, TOSHIHIKO, ATSUSHI NAITO, IORI YOSHIDA, YU CHEN, and MICHAEL HANACK. "ALL-OPTICAL REFLECTANCE CONTROL BASED ON PHOTOINDUCED COMPLEX REFRACTIVE INDEX CHANGES IN GUIDED MODE THIN FILMS CONTAINING INDIUM OR GALLIUM PHTHALOCYANINES." Journal of Nonlinear Optical Physics & Materials 11, no. 03 (September 2002): 205–18. http://dx.doi.org/10.1142/s0218863502001061.

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Tetrasubstituted indium or gallium phthalocyanines and their dimers bridged with various ligands were dispersed in a polymer thin film, which was spin-coated on silver thin film vacuum-evaporated on a glass slide. All-optical reflectance control was achieved by complex refractive index changes upon photoexcitation of phthalocyanines by nanosecond laser in such a guided mode geometry. They gave rise in less than ns pulse width, and a few to a few tens of microseconds decay characteristic to the lifetime of the excited triplet state. Repeated and reversible reflectance changes were achieved. Axially bridged phthalocyanine dimers showed almost the same photoresponses as monomers.

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Pleshakov, I. V., D. A. Lazarev, A. I. Grachev, A. P. Paugurt, and S. G. Shulman. "Photoresponse of granular YBaCuO thin films." Superconductor Science and Technology 9, no. 3 (March 1, 1996): 155–60. http://dx.doi.org/10.1088/0953-2048/9/3/006.

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MAHROUG, A., B. MARI, M. MOLLAR, I. BOUDJADAR, L. GUERBOUS, A. HENNI, and N. SELMI. "STUDIES ON STRUCTURAL, SURFACE MORPHOLOGICAL, OPTICAL, LUMINESCENCE AND UV PHOTODETECTION PROPERTIES OF SOL–GEL Mg-DOPED ZnO THIN FILMS." Surface Review and Letters 26, no. 03 (March 24, 2019): 1850167. http://dx.doi.org/10.1142/s0218625x18501676.

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Undoped and magnesium-doped zinc oxide thin films were prepared by the sol–gel method. Results from X-ray diffraction indicated that the films exhibited a hexagonal wurtzite structure and were highly oriented along the [Formula: see text]-axis. The intensity of the (002) diffraction peak increased with increasing the Mg doping concentration. Also, Mg doping inhibited the growth of crystallite size which decreased from 46[Formula: see text]nm to 38[Formula: see text]nm with doping concentration. Morphological studies by atomic force microscopy (AFM) indicated the uniform thin film growth and the decreasing of grain size and surface roughness with Mg doping. Optical analysis showed that the average transmittance of all films was above 90% in the visible range and Mg doping has significantly enhanced the bandgap energy of ZnO. Two Raman modes assigned to [Formula: see text] and [Formula: see text] for the ZnO wurtzite structure were observed for all films. UV emission peak and three defect emission peaks in the visible region were observed by photoluminescence measurements at room temperature. The intensity ratio of UV emission to the visible emission increased with the Mg concentration. Photocurrent measurements revealed that all films presented the photoresponses with [Formula: see text]-type semiconducting behavior and their generated photocurrents were reduced by Mg doping. The prepared thin films of high quality with improved properties by Mg doping could be proposed to workers in the field of optoelectronic devices for using them as a strong candidate.

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Lee, Burtrand I., Zhicheng Cao, Wade N. Sisk, John Hudak, William D. Samuels, and Gregory J. Exarhos. "Photoresponse of Tb3+ doped phosphosilicate thin films." Materials Research Bulletin 32, no. 9 (September 1997): 1285–92. http://dx.doi.org/10.1016/s0025-5408(97)00101-3.

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Hegmann, F. A., and J. S. Preston. "Photoresponse of high Tc superconductor thin films." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1133–37. http://dx.doi.org/10.1139/p92-183.

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A fast photoresponse is observed in a current-biased epitaxial YBa2Cu3O7 thin-film bridge structure exposed to 100 ps laser pulses. A bolometric response, with a pulse width of the order of 10 ns, dominates at temperatures close to Tc and at high laser fluences. At lower temperatures and fluences, the observed transient response contains distinct fast and slow components. Preliminary results indicate a pulse width for the fast component less than 500 ps. Application of a small magnetic field perpendicular to the sample increases the amplitude of the slow component while leaving the fast component relatively unaffected. Comparison of these results with resistance versus temperature measurements in the same magnetic field suggests that the fast component is nonthermal in origin.

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Dissertations / Theses on the topic "Photoresponses in thin films"

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Linsell, P. "Photoresponse of metal-SiO2Ì²-Si structures." Thesis, Coventry University, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378951.

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Liu, Fanmao. "Photoresponse of ferroelectric BaTiO3 thin films." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/458535.

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BaTiO3 es un material de óxido ferroeléctrico sin plomo. BaTiO3 películas delgadas han sido ampliamente estudiados para aplicaciones de memoria debido a su efecto de memoria de carga resultante de su naturaleza ferroeléctrica. Hoy en día, la comunidad científica ha renovado su interés en BaTiO3, ya que posee características que son interesantes para áreas de rápido desarrollo como la fotovoltaica, la detección fotoeléctrica y la fotocatálisis. El objetivo principal de la presente tesis es estudiar los efectos fotoeléctricos de las películas delgadas BaTiO3 y dar luz sobre los mecanismos relevantes que las controlan. Los materiales ferroeléctricos muestran campos eléctricos internos intrínsecos, inevitables y exclusivos: campo eléctrico de impresión (Eimp) y campo eléctrico de despolarización (Edep). Así se pueden obtener distintos efectos fotoeléctricos debido a Eimp y Edep. En la presente tesis hemos estudiado en detalle el papel de Eimp y Edep en los efectos fotoeléctricos de películas BaTiO3. En particular, se muestra que se puede usar una configuración de medición apropiada para revelar y aislar su contribución. Como resultado, pueden obtenerse diferentes foto respuestas transitorias y constantes según se desee. De igual modo, se analiza su contribución a la dinámica de conmutación ferroeléctrica. La foto respuesta transitorio tiene su origen en el cribado de la carga superficial (fotograbado). Para modular su magnitud se ha realizado una caracterización detallada. Se concluye que la polarización de las fotos se rige por la presencia de agua adsorbida en la superficie, lo que permite su control. Sin embargo, se ha encontrado que la eficiencia fotoeléctrica está limitada por la baja generación de portadores por la luz, por lo que el efecto de O sustituido por N en la red BaTiO3, lo que debería dar lugar a un estrechamiento de banda, mejorando así la eficiencia fotoeléctrica , ha sido estudiado. Curiosamente, se encuentra que los tratamientos de amoníaco son eficientes para mejorar las respuestas fotoeléctricas, sin tener ninguna evidencia clara de la sustitución de N.
BaTiO3 is a lead-free ferroelectric oxide material. BaTiO3 thin films have been widely studied for memory applications due to its charge memory effect resulting from its ferroelectric nature. Nowadays, the scientific community has renewed its interest on BaTiO3, because it holds characteristics that is interesting for rapidly developing areas such as photovoltaics, photoelectric sensing and photocatalysis. The main goal of the present thesis is to study the photoelectric effects on BaTiO3 thin films and to give light on the relevant mechanisms that control them. Ferroelectric materials show intrinsic, unavoidable and exclusive internal electric fields: imprint electric field (Eimp) and depolarization electric field (Edep). Thus distinct photoelectric effects can be obtained due to Eimp and Edep. In the present thesis we have studied in detail the role of Eimp and Edep on photoelectric effects of BaTiO3 films. In particular, it is shown that appropriate measurement configuration can be used to disclose and isolate their contribution. As a result, different transient and constant photoresponses can be obtained as wish. By the same token, their contribution to the ferroelectric switching dynamics are also analyzed. The transient photoresponse finds its origin on the screening of surface charge (photoscreening). In order to modulate its magnitude detailed characterization has been performed. It is concluded that the polarization photoscreening is governed by the presence of water adsorbed at the surface, allowing it to be controlled. However, the photoelectric efficiency has been found to be limited by the low generation of carriers by light, that is the reason why the effect of O substituted by N in BaTiO3 lattice, which should result in band-gap narrowing, hence improving the photoelectric efficiency, has been studied. Interestingly, it is found that ammonia treatments are efficient to improve photoelectric responses, without having any clear evidence of N substitution.

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Hus, Saban Mustafa. "Physical Properties Of Cdse Thin Films Produced By Thermal Evaporation And E-beam Techniques." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607608/index.pdf.

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CdSe thin films were deposited by thermal evaporation and e-beam evaporation techniques on to well cleaned glass substrates. Low dose of boron have been implanted on a group of samples. EDAX and X-ray patterns revealed that almost stoichiometric polycrystalline films have been deposited in (002) preferred orientation. An analysis of optical measurements revealed a sharp increase in absorption coefficient below 700 nm and existence of a direct allowed transition. The calculated band gap was around 1.7 eV. The room temperature conductivity values of the samples were found to be between 9.4 and 7.5x10-4 (&
#937
-cm)-1 and 1.6x10-6 and 5.7x10-7 (&
#937
-cm)-1for the thermally evaporated and e-beam evaporated samples respectively. After B implantation conductivity of these films increased 5 and 8 times respectively. Hall mobility measurements could be performed only on the thermally evaporated and B-implanted e-beam evaporated samples and found to be between 8.8 and 86.8 (cm2/V.s). The dominant conduction mechanism were determined to be thermionic emission above 250 K for all samples. Tunneling and v variable range hopping mechanisms have been observed between 150-240 K and 80- 140 K respectively. Photoconductivity &
#8211
illumination intensity plots indicated two recombination centers dominating at the low and high regions of studied temperature range of 80-400 K. Photoresponse measurements have corrected optical band gap measurements by giving peak value at 1.72 eV.

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Rossi, Leonardo. "Flexible oxide thin film transistors: fabrication and photoresponse." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14542/.

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Gli ossidi amorfi semiconduttori (AOS) sono nuovi candidati per l’elettronica flessibile e su grandi aree: grazie ai loro legami prevalentemente ionici hanno una mobilità relativamente alta (µ > 10cm^2/Vs) anche nella fase amorfa. Transistor a film sottile (TFT) basati sugli AOS saranno quindi più performanti di tecnologie a base di a-Si e più economici di quelle a base di silicio policristallino. Essendo amorfi, possono essere depositati a basse temperature e su substrati polimerici, caratteristica chiave per l’elettronica flessibile e su grandi aree. Per questa tesi, diversi TFT sono stati fabbricati e caratterizzati nei laboratori del CENIMAT all’Università Nova di Lisbona sotto la supervisione del Prof. P. Barquinha. Questi dispositivi sono composti di contatti in molibdeno, un canale semiconduttivo di ossido di zinco, gallio e indio (IGZO) e un dielettrico composto da 7 strati alternati di SiO2 e SiO2+Ta2O5. Tutti i dispositivi sono stati depositati mediante sputtering su sostrati flessibili (fogli di PEN). Le misure tensione-corrente mostrano che i dispositivi mantengono alte mobilità (decine di 10cm^2/Vs) anche quando fabbricati a temperature inferiori a 200°C. Si è analizzato il funzionamento dei dispositivi come fototransistor rilevando la risposta alla luce ultravioletta e in particolare la loro responsività e spostamento della tensione di soglia in funzione della lunghezza d’onda incidente. Questi risultati consentono di formulare ipotesi sul comportamento dei dispositivi alla scala microscopica. In particolare, indicano che i) la mobilità del canale non è influenzata dall’illuminazione, ii) sia l'IGZO sia il Ta2O5 contribuiscono al processo di fotoconduttività e iii) il processo di fotogenerazione non è adiabatico. La tesi contiene inoltre una descrizione del processo di ricombinazione e presenta un’applicazione pratica di tali dispositivi in un circuito per RFID. Infine, esplora la possibilità di migliorarne la flessibilità e le prestazioni.

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CHIPMAN, RUSSELL ATWOOD. "POLARIZATION ABERRATIONS (THIN FILMS)." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184051.

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Polarization aberrations are the variations of amplitude, phase, polarization and retardance associated with ray paths through optical systems. This dissertation develops methods for calculating the polarization aberrations of radially symmetric systems of weak polarizers, systems like lenses, telescopes and microscopes. The instrumental polarization in these systems arises from weak polarization effects occurring near normal incidence at glass, metal and thin film coated interfaces. Polarized light and polarizers are treated using the Jones calculus. Weak polarizers, optical elements with small polarization effects, are treated by expanding the Fresnel equations and thin film equations into a Taylor series. Methods are given for calculating the Taylor series coefficients for a multilayer coated interface whose polarization performance is known, for example from a thin film design program. Equations are derived for the propagation of polarized light through optical systems. Weak polarizers are shown to be very weakly order dependent; this greatly facilitates the calculation of the effect of a sequence of weak polarizers. The dominant terms are order independent polarization terms which are readily calculated. The order dependent portion can be systematically evaluated as higher order terms. The instrumental polarization, being a function of angle of incidence, is different for different rays through the system. Thus an optical system is a spatially varying polarizer. The instrumental polarization associated with a single surface is often well approximated as a "parabolic" polarizer. The instrumental polarization function is calculated as a Taylor series Jones matrix about the optical axis as a function of object and pupil coordinates. The resulting spatial variations of the instrumental polarization function bear a strong resemblance to the wavefront aberrations, since both arise from fundamental geometrical considerations. In particular, there are terms in the weak linear polarization and in the weak retardance of radially symmetric systems which strongly resemble defocus, tilt and piston error. A polarization aberration expansion is defined to second order in the object and pupil coordinates. A method is derived for calculating the polarization aberration coefficients for a sequence of radially symmetric surfaces from the Taylor series representation of the polarization associated with the individual interfaces.

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Wallace, Anthony James. "Tin oxide thin films." Thesis, Brunel University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.294556.

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Poulter, Mark W. "Pyroelectric organic thin films." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303623.

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Kamhawi, Khalid. "Transport in Thin Films." Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.508624.

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Babkair, S. S. "Multilayer ferromagnetic thin films." Thesis, University of Salford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234564.

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Hu, Xiao. "Ultra-thin oxide films." Thesis, University of Oxford, 2016. https://ora.ox.ac.uk/objects/uuid:d7373376-84f1-459e-bffb-f16ce43f02b7.

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Oxide ultra-thin film surfaces have properties and structures that are significantly different from the terminations of the corresponding bulk crystals. For example, surface structures of epitaxial ultra-thin oxide films are highly influenced by the crystallinity and electronegativity of the metal substrates they grown on. Some enhanced properties of the novel reconstructions are related to catalysis, sensing and microelectronics, which has resulted in an increasing interest in this field. Ultra-thin TiO_x films were grown on Au(111) substrates in this work. Two well-ordered structures within monolayer coverage - honeycomb (HC) and pinwheel - were generated and investigated. Special attention has been paid to the uniform (2 x 2) Ti₂O₃ HC phase including its regular structure and imperfections such as domain boundaries (DBs) and point defects. Linear DBs with long-range repeating units have been observed; density functional theory (DFT) modelling has been used to simulate their atomic structures and calculate their formation energies. Rotational DBs/defects show up less frequently, however a six-fold symmetrical 'snowflake' DB loop stands out. Two types of point defects have been discovered and assigned to Ti vacancies and oxygen vacancies/hydroxyl groups. Their diffusion manners and pairing habits have been discussed within an experimental context. The results of growing NbO_x ultra-thin films on Au(111) are also presented in this thesis. An identical looking (2 x 2) HC structure to the Ti₂O₃ ultra-thin film has been formed; a stoichiometry of Nb2O3 is suggested. Another interesting reconstruction is a hollow triangle structure. Various sizes have been found, and sides of these equilateral triangles all show a double-line feature aligned along the { 1 ₁⁻ } directions of the Au(111) lattice. Chemical composition characterisations of NbO_x thin films are still required as is DFT modelling. Experimental techniques used in this thesis include scanning tunnelling microscopy (STM), low energy electron diffraction (LEED), and X-ray photoelectron spectroscopy (XPS). Ultra-thin oxide films were created by physical vapour deposition (PVD) in ultra-high vacuum (UHV) systems.

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Books on the topic "Photoresponses in thin films"

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PERIODICAL/PÉRIODIQUE. Thin Films. San Diego, CA: Academic Press, 1995.

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Wijn, H. P. J., ed. Thin Films. Berlin/Heidelberg: Springer-Verlag, 1988. http://dx.doi.org/10.1007/b35316.

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1952-, Russell Thomas P., ed. Polymer thin films. Hackensack, N.J: World Scientific, 2008.

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Decher, Gero, and Joseph B. Schlenoff, eds. Multilayer Thin Films. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646746.

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Professor Okuyama, Masanori, and Yoshihiro Ishibashi, eds. Ferroelectric Thin Films. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/b99517.

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Mele, Paolo, Dario Narducci, Michihiro Ohta, Kaniskha Biswas, Juan Morante, Shrikant Saini, and Tamio Endo, eds. Thermoelectric Thin Films. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20043-5.

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Blossey, Ralf. Thin Liquid Films. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-4455-4.

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Frank, Curtis W., ed. Organic Thin Films. Washington, DC: American Chemical Society, 1998. http://dx.doi.org/10.1021/bk-1998-0695.

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Bach, Hans. Thin Films on Glass. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003.

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George, Joy. Preparation of thin films. New York: M. Dekker, 1992.

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Book chapters on the topic "Photoresponses in thin films"

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Ohya, Seishiro, Shiro Karasawa, Naomi Hidaka, Yukio Kurihara, and Hanns-Ulrich Habermeier. "Photoresponse of Bi-Sr-Ca-Cu-O Thin Films." In Advances in Superconductivity III, 1215–18. Tokyo: Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_275.

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Nassar, Raja, and Weizhong Dai. "Thin Films." In Modelling of Microfabrication Systems, 221–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-08792-3_6.

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Zweibel, Ken. "Thin Films." In Harnessing Solar Power, 129–42. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_8.

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Chipman, Russell A., Wai-Sze Tiffany Lam, and Garam Young. "Thin Films." In Polarized Light and Optical Systems, 479–506. Boca Raton : Taylor & Francis, CRC Press, 2019. | Series: Optical sciences and applications of light: CRC Press, 2018. http://dx.doi.org/10.1201/9781351129121-13.

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Gould, Robert. "Thin Films." In Springer Handbook of Electronic and Photonic Materials, 659–716. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_29.

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Schomburg, Werner Karl. "Thin Films." In Introduction to Microsystem Design, 9–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-19489-4_4.

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Huebener, Rudolf Peter. "Thin Films." In Springer Series in SOLID-STATE SCIENCES, 94–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-08446-5_5.

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Gdoutos, Emmanuel E. "Thin Films." In Fracture Mechanics, 353–70. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35098-7_12.

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Gould, Robert D., Safa Kasap, and Asim K. Ray. "Thin Films." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_28.

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Schomburg, Werner Karl. "Thin Films." In Introduction to Microsystem Design, 9–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47023-7_4.

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Conference papers on the topic "Photoresponses in thin films"

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Noginova, N., M. Bahoura, C. E. Bonner, and A. Verevkin. "Fast and slow photoresponses in CMR thin films." In CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest. IEEE, 2001. http://dx.doi.org/10.1109/cleo.2001.947674.

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Fantini, Marcia C., Annette Gorenstein, Wu-Mian Shen, and Micha Tomkiewicz. "Electroreflectance and photoresponse of NiOx thin films." In Optical Materials Technology for Energy Efficiency and Solar Energy, edited by Anne Hugot-Le Goff, Claes-Goeran Granqvist, and Carl M. Lampert. SPIE, 1992. http://dx.doi.org/10.1117/12.130547.

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Che, Bowen, Yongpeng Zhang, and Xingwei Ding. "Photoresponses Improvement of ZnO Thin Film Transistor by Using a HfO2-Al2O3 Double Dielectrics." In 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202892.

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Al Amin, Tanveer, Chowdhury Md Arif, Ahmed Tasnim Rasin, S. M. Mominuzzaman, and M. S. Islam. "Spectral Photoresponse of Nitrogen Incorporated Carbon Thin Films." In 2006 International Conference on Electrical and Computer Engineering. IEEE, 2006. http://dx.doi.org/10.1109/icece.2006.355649.

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Malek, M. F., S. A. Arbain, M. H. Mamat, M. Z. Sahdan, M. Z. Musa, Z. Khusaimi, M. Rusop, and A. S. Rodzi. "Photoresponse characteristics of nanostructured aluminum doped Zinc oxide thin films." In 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA). IEEE, 2011. http://dx.doi.org/10.1109/icedsa.2011.5959097.

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Krchnavek, Robert R., S. J. Allen, Siu-Wai Chan, F. De Rosa, M. K. Kelly, S. Sampere, C. T. Rogers, and P. F. Miceli. "Photoresponse Of Laser Modified High-T c Superconducting Thin Films." In 1989 Microelectronic Intergrated Processing Conferences, edited by T. Venkatesan. SPIE, 1990. http://dx.doi.org/10.1117/12.965166.

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Valco, George J., Paul C. Claspy, Joseph D. Warner, Nicholas C. Varaljay, and Kul B. Bhasin. "Photoresponse of YBa2Cu3O7-delta granular and epitaxial superconducting thin films." In Orlando '90, 16-20 April, edited by Kul B. Bhasin and Vernon O. Heinen. SPIE, 1990. http://dx.doi.org/10.1117/12.21042.

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Xu, Ying, Marat Khafizov, Andrej Plecenik, Peter Kus, Leonid Satrapinsky, and Roman Sobolewski. "Fabrication and femtosecond photoresponse studies of MgB 2 superconducting thin films." In International Symposium on Optical Science and Technology, edited by Ivan Bozovic and Davor Pavuna. SPIE, 2002. http://dx.doi.org/10.1117/12.455833.

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Rajalakshmi, R., and S. Angappane. "Photoresponse study on transition metal (Co, Ni, Mn) doped ZnO thin films." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791405.

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Hegmann, Frank A., Steven H. Moffat, Robert A. Hughes, John S. Preston, Douglas Jacobs-Perkins, Chia-Chi Wang, Thomas Y. Hsiang, and Roman Sobolewski. "Electro-optic sampling of picosecond photoresponse of epitaxial YBa2Cu3O7-δ thin films." In Ultrafast Electronics and Optoelectronics. Washington, D.C.: OSA, 1995. http://dx.doi.org/10.1364/ueo.1995.umd2.

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Reports on the topic "Photoresponses in thin films"

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Hui, Y., R. Brusasco, R. Kershaw, K. Dwight, and A. Wold. VO2 Thin Films. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada171554.

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Phillips, M. L. F., P. I. Pohl, and C. J. Brinker. Selective inorganic thin films. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/494134.

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Phillips, M. L. F., L. A. Weisenbach, and M. T. Anderson. Selective inorganic thin films. Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/105137.

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Zweibel, K. Thin films: Past, present, future. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/61140.

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Stegeman, G. I., and C. T. Seaton. Nonlinear Optics in Thin Films. Fort Belvoir, VA: Defense Technical Information Center, November 1989. http://dx.doi.org/10.21236/ada217336.

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Read, D. T. Tensile testing of thin films :. Gaithersburg, MD: National Bureau of Standards, 1997. http://dx.doi.org/10.6028/nist.tn.1500-1.

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Kaminsky, R., V. Bergeron, and C. J. Radke. Thin films, asphaltenes, and reservoir wettability. Office of Scientific and Technical Information (OSTI), April 1993. http://dx.doi.org/10.2172/10194918.

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Haertling, Gene, Eric Skaar, Raj Singh, Feiling Wang, and David Dausch. Intelligent Processing of Ferroelectric Thin Films. Fort Belvoir, VA: Defense Technical Information Center, May 1994. http://dx.doi.org/10.21236/ada282833.

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Geballe, T. H. Superconducting Thin Films Composites and Junctions. Fort Belvoir, VA: Defense Technical Information Center, October 1988. http://dx.doi.org/10.21236/ada204556.

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Saunders, A. The Preparation of ACEL Thin Films. Fort Belvoir, VA: Defense Technical Information Center, January 1988. http://dx.doi.org/10.21236/ada201813.

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