Dissertations / Theses on the topic 'Photoresist'
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Cheshmehkani, Ameneh. "Design and synthesis of molecular resists for high resolution patterning performance." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50286.
Full textBarkschat, Axel. "Bildgebende elektrochemische Untersuchungen an Grenzflächen mit metallzentrierten Elektronenübertragungen." [S.l.] : [s.n.], 2004. http://www.diss.fu-berlin.de/2004/124/index.html.
Full textChao, Adam (Adam C. ). "Salty development of an optical photoresist." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44823.
Full textIncludes bibliographical references (leaf 26).
In this series of experiments, we add salt to a photoresist developer and observe the effect on photoresist contrast. In order to measure contrast, we designed an anti-reflection coating stack to reduce reflections between the photomask and the photoresist. After development, we observe that for 400 nm exposures of photoresist PS4 that there is no significant change in contrast with salty development, however, for samples exposed at 220 nm, there is contrast enhancement. However, it is not clear how much of the contrast enhancement for the 220 nm samples was due to the shorter wavelength, and how much was due to a different developer concentration versus the 400 nm samples. That being said, we hypothesize that the observed contrast enhancement is due to differences in photoresist cross-linking due to the different wavelength exposures.
by Adam Chao.
S.B.
Gardiner, Allen Brooke. "Measurement of concentration gradients in photoresist films and study of the influence of these gradients on photoresist performance /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Full textHenderson, Clifford Lee. "Advances in photoresist characterization and lithography simulation /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.
Full textYamada, Shintaro. "Design and study of advanced photoresist materials : positive tone photoresists with reduced environmental impact and materials for 157 nm lithography /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004404.
Full textDaly, Daniel John. "The fabrication and measurement of melted photoresist microlenses." Thesis, King's College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300378.
Full textCho, Sungseo. "Synthesis of photoresist materials for 193 nm exposure /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
Full textWong, Sean Hang Edmond. "Arsenic Trisulfide Inorganic Photoresist for Three-Dimensional Photolithography." [S.l. : s.n.], 2008. http://digbib.ubka.uni-karlsruhe.de/volltexte/1000009084.
Full textTomicic, Daniel. "Adhesion measurements of positive photoresist on sputtered aluminium surface." Thesis, Linköping University, Department of Science and Technology, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1118.
Full textThis thesis deals with different methods to improve the adhesion between sputtered aluminium and positive photoresist. Factors controlling the adhesion and different ways to measure the adhesion have been investigated. Different surface treatments prior to resist disposition have been investigated as well. The investigated surface treatments and adhesion measurements are compatible with the available equipment and the existing process cycle at Strand Interconnect AB. All tests were made in class 1000 clean room. All tests in this thesis were performed with MICROPOSIT S1818 SP16, which is a commercial and commonly used positive resist manufactured by Shipley.
To provide sufficient adhesion on the aluminium surface some kind of surface treatment must be used. Today a wet chemical treatment is used at Strand Interconnect. In this report methods to modify the surface properties and to measure the adhesion have been investigated. The three methods to modify the aluminium surface were oxygen plasma, wet chemicals and primers and were used in this thesis. The RF power and time duration of the oxygen plasma were varied, while the temperature, gas flow and pressure were fixed. The adhesion was determined indirectly from measuring contact angles of 50 µl DI water droplets on sputtered aluminium in the wettability test as well as directly from the undercut caused by the etch fluid at the interface between the photoresist and the aluminium surface.
An oxygen plasma with 200 W power for 30 s resulted in the lowest measured contact angle, which means that the resist adheres well on the surface. The angle was 2.99 degrees compared to 6.34 degrees for the wet chemical treatment used today. The same treatment also resulted in the lowest undercut, which correlates well with the result from the contact angle measurements. The measured undercut for a 25µm wide conductor was 1.41 µm, corresponding to an undercutting constant (ku) of 1410. The wet chemical surface treatment used today resulted in an undercut of 1.60 µm, equivalent to a ku of 1233. Similar results were obtained for a 15 µm wide conductor.
Kanikella, Phaninder Reddy. "Process development and applications of a dry film photoresist." Diss., Rolla, Mo. : University of Missouri-Rolla, 2007. http://scholarsmine.umr.edu/thesis/pdf/Kanikella_09007dcc803c3a3a.pdf.
Full textVita. The entire thesis text is included in file. Title from title screen of thesis/dissertation PDF file (viewed December 6, 2007) Includes bibliographical references.
Wissen, Matthias. "Thermisches Nanoimprint in UV vernetzende Fotolacke." Tönning Lübeck Marburg Der Andere Verl, 2007. http://d-nb.info/988176343/04.
Full textBerger, Cody Michael. "Measuring Acid Generation Kinetics in Photoresist Films via Capacitance Techniques." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/7598.
Full textEngelmann, Sebastian Ulrich. "Plasma-surface interactions of model polymers for advanced photoresist systems." College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8746.
Full textThesis research directed by: Dept. of Material Science and Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Gao, Karen Ging. "Photoresist removal using low molecular weight alcohols and IPA-based solutions." Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/11875.
Full textRobertson, Stewart A. "In-situ characterisation of positive photoresist development during automated wafer processing." Thesis, University of Edinburgh, 1994. http://hdl.handle.net/1842/12865.
Full textGeissler, Daniel. "Photospaltbare (Cumarin-4-yl)methyl-Ester als Phototrigger für Nucleotide, Aminosäuren und Protonen." Berlin Logos-Verl, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?id=2949675&prov=M&dok_var=1&dok_ext=htm.
Full textJohnson, Ward A. "Anisotropic acid catalyst displacement in a chemically amplified photoresist via application of an electric field /." Online version of thesis, 2009. http://hdl.handle.net/1850/11620.
Full textSierchio, Justin Mark. "Development of Large Array Auto Write-Scan Photoresist Fabrication and Inspection System." Diss., The University of Arizona, 2014. http://hdl.handle.net/10150/316782.
Full textClukay, Christopher J. "Gold nanoparticle generation using in situ reduction on a photoresist polymer substrate." Honors in the Major Thesis, University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/361.
Full textB.S.
Bachelors
Sciences
Chemistry
Conradie, Ewan Hendrik. "Functional photoresist and silicon-on-insulator for micro-electro-mechanical system (MEMS)." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.620405.
Full textChen, Wen Chi, and 陳玟綺. "Investigation of holographic photoresist grating." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/47187017847282625086.
Full text萬能科技大學
工程科技研究所
98
In this paper,we make holographic photoresist grating base on the thesis of interference . We got two coherent light of wavelength 422nm from He-Cd Laser using beam splitter and make the interferent on photoresist plate . Then , we develop the photoresist plate to gee the interference fringes . Finally , we soft fried analysis the influence about the relative references of photoresist plate.
Ding, Yau-Bo, and 丁耀柏. "Photoresist Stripping by Supercritical Fluid." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/09482953903710547306.
Full textBurns, Sean David. "Understanding fundamental mechanisms of photoresist dissolution." Thesis, 2003. http://wwwlib.umi.com/cr/utexas/fullcit?p3110736.
Full textLiau, Shing-Ming, and 廖信銘. "Synthesis and Properties of Negative Photoresist." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/79162701133189683675.
Full text國立成功大學
化學工程學系
88
Dry film photoresist is a kind of negative photoresist. It crosslink under ultraviolet light exposure, followed by the removal of the unexposed material and etching generates the microcircuit. Dry film photoresist have become widely used in printed circuit boards fabrication because they are more convenient to apply and provide better yield than others. In our investigation, first we synthesized a three-component coploymer, which consists of methyl methacrylate, ethyl acrylate and methacrylic acid by the free radical copolymerization. The copolymer is used as binder in dry film photoresist. In addition, each pair of three monomers is copolymerized in order to find out the reactivity ratio. Second, we also synthesized two kinds of epoxy acrylate, which are biphenyl epoxy acrylate and bisphenol A epoxy acrylate, they were characterized by acid values, EEW and FTIR analyses. These oligomers contain α,β-unsaturated acrylic end groups, and are photocrosslinkable. They provide toughness, good adhesion and heat resistance to the cured film. In the mean time, the sensitivity, contrast, photocrosslinkable rate and developing rate for various dry film photoresist compositions are investigated. Finally, the microcircuit and line width were examined by SEM.
Lee, Shih-Chieh, and 李世傑. "Simulation of Photoresist Exposure and Development." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/27124014089278341631.
Full text國立交通大學
光電工程研究所
86
We develop a microlithography simulation program that can calculate the latent image in the photoresist and the profile of resist after development. In the thesis, we model the exposure- projection system, treat photoresist as thin-film, adopt Dill model and Mack model to evaluate the PAC concentration and developing speed respectively, and finally utilize the least action principle together with Runge-Kutta numerical method to get the resist profile. Simulation results of contact holes, isolate lines and line/space patterns are given as examples.
Pawloski, Adam Richard. "Chemically amplified photoresist : materials and processes /." 2002. http://www.library.wisc.edu/databases/connect/dissertations.html.
Full textYang, Chin-Chien, and 楊金錢. "Effect of gel in the Photoresist." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/49134549210838797528.
Full text元智大學
化學工程學系
92
The properties, component and source of the gel formed in the manufacture process of photoresist have been investigated. The components were studied and analyzed by burning and dissolving the gel. DSC, IR spectrometer and SEM were used to discuss it’s physical properties. The source of the gel is likely a coagulation constructed, from non-dissolved PAC, dust, insoluble component in the resin and Novolak. The way to avoid the forming of gel was also studied here. It includes that decreased the temperature during the producing of the Novolak, raised the ratio of the Novolak and utilized low-esterification-ratio PAC. Dissolving and filtrating the Novolak before the manufacturing process, was also used to separate the insoluble component.
Schmid, Gerard Michael. "Understanding molecular scale effects during photoresist processing." 2003. http://wwwlib.umi.com/cr/utexas/fullcit?p3116179.
Full textTelecky, Alan J. "Photoresist and ion-exchange chemistry of HafSOx." Thesis, 2012. http://hdl.handle.net/1957/29732.
Full textGraduation date: 2012
Cheng, Chia-He, and 鄭家和. "Analysis and Research of Photoresist Stacking Process." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/99942708671779880223.
Full text中華大學
機械工程學系碩士在職專班
100
This thesis is a study on TSV photolithography and etch process by using available resources to achieve the same functions of SU-8 photoresi- st,It helps to determine the correlation of polyimide photoresist thickn- ess versus etch depth during the etch process。 Experiments are carried out with multilayer coating of polyimide photoresist followed by photolithography developing and an etcher to complete the etch process. Data collection are done by measuring the thickness and etch depth each time。 This thesis introduce the various semiconductor process with discuss- ion of thickness adjustment methodology, purpose of each process step and problems encountered。
Kuo, Tzong-Jen, and 郭宗仁. "The making photoresist master of embossing hologram." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/42307493676256824495.
Full text國立中央大學
光電(科學)研究所
82
The aim of this thesis is to research the methods making photoresist master of each kind of embossing hologram product from the view of technology , and to find a way of the simp- lest and the best . We try to producing the photoresist master finally . The researching method of this thesis is firstly to mea- sure the material character of photoresist and to make the hologram of photoresist by using the idea of the rainbow holo- graphy and the color coding . We find the Ar+ laser with wave- length 457.9nm is the suitable light source for our work . For making a hologram in photoresist plate directly the results are not bad except for the true color hologram . The true co- lor hologram can be make better in quality by using the method of copy . In the process of my research , I have find and pro- pose some new theory and methods . As follow : (1) Derive a new condition " The condition of the object with single color in rainbow hologram " . (2) The easy method for making 2-D rainbow hologram . (3) The new method that decrease " Double reflection " when holograms copy to photoresist . (4) Another method for making true color stereogram " Color coding by changing reference beam angle " .
Wang, Ming-Wen, and 王明文. "Fingering Instability and Reduction of Photoresist Usage." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/32661520847028629108.
Full text國立中央大學
機械工程研究所
89
To reduce the photoresist usage and understand the film spreading process, this study performs flow visualization experiments and numerical simulations. This thesis is the first work to show that in the early stage of the spin coating process, the spreading of photoresist is mainly governed by the photoresist injection. Then, instability fingers are formed due to the centrifugal force. Accompanied by the growth of fingers in length, the Coriolis force broadens the width of fingers. The numerical results agree with the measured liquid front history at a very short time. Difference between the numerical results and experimental data gradually aroused due to the formation of instability fingers. The critical injection rate for fully coating a wafer increases with decreasing injection volume. Under a fixed wafer rotating speed, increasing the injection rate can significantly reduce the photoresist usage. Since the fingering instability plays a very import role during spin coating, a study of fingering instability for both the injected liquid and a released drop of silicon oil is presented. However, the injected liquid or released drop, the flow field is inner region flow in the low rotational speed and the flow field is outer flow region in the high rotational speed. Due to the effects of molecular wetting and centrifugal force, the shaped of liquid is “wedge” or “nose”. Compared to the results for a released drop, the effect of the liquid injection tends to decrease the critical radius, number of fingers, and maximum fully coated radius. The results will provide the design and operation of spin coating process.
Lin, Song Shiang, and 林松香. "Silicon-Containing Positive Photoresist for DUV Lithography." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/42855370834703935465.
Full text中原大學
化學系
87
The hydrophilicity of the ladder-type alkali insoluble polysilsesquioxane(PolyT4) is modified, in this study, through hydroxylation and acetylation to produce OH-PolyT4 and AC-PolyT4, respectively. It is found that AC-PolyT4 is not only alkali soluble but also casting-solvent compatible.It is high in silicon content (more than 20 wt%) and suitable as a dry-etching resist binder. The preparation methods are described in this study and the physical as well as chemical properties are determined by the use of GPC、UV、IR and TGA. On the other hand, a high-transparent aliphatic compound (TDDM) is selected as the ballast group to esterify with diazonaphthoquinone (DNQ) to give photoactive compound(PAC), which could be admixed with AC-PolyT4 to form a positive photoresist. The positive photoresist thus formed is evaluated as a top layer of the bilayer resist system by deep UV lithography process. N、K values、 swing cure and contrast are measured. The photospeed enhancement effect by using tetrahydroxy-tetraphenyl-cyclo-tetrasiloxane(T4(OH)4) is also discussed in this study. It is found that a fine line of 0.26μm line/space pattern could be successfully printed. This research was intended to develop a silicon-containing positivephotoresist, applicable in the bilayer process for the deep UVphotolithography. We have accomplished the task.
Junarsa, Ivan. "Methods to reduce collapse of photoresist nanostructures." 2004. http://catalog.hathitrust.org/api/volumes/oclc/56202506.html.
Full textChu, Jia-Der, and 朱家德. "A Revised Model of Photoresist Nozzle Allocation." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/h44paq.
Full text國立交通大學
工業工程與管理系所
102
This study addresses the allocation of photoresists’ nozzles problem. Wen proposed a mathematical model to solve this problem in 2011. However, we find there are some errors in her mathematical model for some cases and we revised her model in this study. Given the demands of the products in the planning period, the allocation of the photoresist nozzle in previous period and the relationship among each type of photoresist, considered the constraints of machine capacity and the processing quantity of photoresist related to the relationships among each type of photoresist, we formulate a linear integer programming (IP) model for minimizing the non-productive consumption costs we consider in this study to determine the allocation of the photoresist nozzle in the planning period. The non-productive consumption costs include dummy cost of photoresist nozzles, maintenance cost and purge cost. We use LINGO to solve this linear IP mathematical model. The computational time is in exponentially growing with the number of machine and photoresist. In order to reduce the computational time, we propose a heuristic by adding some additional constraints to the IP model to reduce the computational time. Then we verify the accuracy of the heuristic. The worst relative error in testing cases is no more than 4%.
Yeh, Hsing-Wu, and 葉星吾. "Evaluation and Testing of G-line Photoresist." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/32578030629655920052.
Full textLin, Bing-Yi, and 林秉毅. "Preparation of Nanoscale Silica Modified Negative Acrylate Photoresist." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/11217757631756517648.
Full text淡江大學
化學工程與材料工程學系
93
Organic-inorganic hybrid materials produced from sol-gel techniques have received extensive interest recently. Such hybrid materials are used to synthesize new electronic and optical materials. In this investigation, we use radical chain polymerization to synthesize the Poly(MMA-MAA) copolymer and Poly(MMA-MAA-MSMA) polymer first, and then use the sol-gel method to prepare Polyacrylate-silica hybrid material. The used acrylic monomers were methyl methacrylate (MMA), methacrylic acid (MAA), and 3-(trimethoxysilyl) propyl methacrylate (MSMA). Alkoxide monomer for the preparation of the silicate segment was tetraethoxysilane (TEOS). The effects of the ratio of MSMA and silica on the morphology and thermal properties of the composites were investigated. We added the photosensitive monomers, photoinitiator, dye, and other additives to the composites to prepare negative photoresist. Furthermore, FTIR was employed to investigated the evolution of chemical bonds between component molecules at polymerization and sol-gel process. FESEM and TEM were used to find out the effects of the size and distribution of silica and the porous structure of the composite on the physical properties of the photosensitive film. TGA, DSC, DMA and TMA were used to measure the degradation temperature, glass transition temperature and thermal expansion coefficient, respectively. The experimental results showed that the silica domain the hybrid films was varied from 200-350nm to 100nm by the different weight ratio of MSMA to acrylate monomers. Moreover, no phase separation was observed in Poly(MMA-MAA-MSMA)/SiO2 hybrid with increasing MSMA content. The thermal stability of the prepared hybrid films increased with the increasing silica and MSMA. It was found that the trialkoxysilyl-functionalized polymer was best suited for preparation of hybrid materials with improved properties.
Huang, Shih-Chuang, and 黃識銓. "Modification of Photoresist and Fabrication of Microlens Arrays." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/88855732416811070401.
Full text國立東華大學
光電工程研究所
98
In this study, silver nanoparticles were synthesized and mixed into the photoresist to modify its properties. The modified photoresist was used to fabricate precise microlens arrays by tightly controlling their feature sizes and geometrical shapes. Experimental results showed that the thermal reflow of microlenses speeds up at higher temperatures and shorter softbake durations. However, microlenses begin to broaden at a too high temperature since the photoresist molecules start to move along the interface between the photoresist and the silicon. The feature size of microlenses is thus not possible to be well controlled. In this study, home-made thermal-reflow apparatus was used to manufacture microlenses. The temperature of photoresist surface is higher than the temperature of the interface between the silicon and the photoresist. The photoresist molecules move thus quickly along the free surface of the photoresist, but not along the interface. Therefore, precisely spherical microlens arrays were fabricated.
Liao, Jen-Sen, and 廖彥瑋. "The study of photoresist removal by ozone-water." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/21680045635042921999.
Full text國立交通大學
電子工程系
89
The study of photoresist removal by ozone-water Student: Jen-Sen Liao Advisor：Dr.Jen-Chung Lou Department of Electronics Engineering & Institute of Electronics National Chiao Tung University Abstract The organic photoresist on silicon surface stripping procrsses that currently used in manufacturing technologies are based on dry and wet strip treatment. First, using plasma asher to removal the photoresist then used H2SO4/H2O2 to removal the residues photoresist and Di-water resing. We have studied the properties of photoresist removal by ozone-water. We let the experiments in various conditions and performed the every stripping rate of photoresist. We changed the hard bake temperature, ozone-water temperature, ozone concentration and the different photoresists. After experiments we took the samples into the microscope to observe the results and check whether damage the under layer films. Our studying evaluates the ozone-water process for photoresist removal, it has potential to reduce the cost of ownership (CoO) and throughput. In addition, it can reduce the environmental impact of the current photoresist stripping processes.
Tsay, Miau-Shing, and 蔡妙欣. "Preparation and photoresist characteristic of negative photosensitive polyimide." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/zs3u46.
Full text國立成功大學
化學工程學系碩博士班
90
In this study, two series of polyimides (PI1&PI2) were synthesized. One was produced by the reaction of two kinds of diamine compounds consisting of diaminopolysiloxane and 4,4’- diamino-4”-hydroxytriphenylmethane(DHTM) in various ratio wi- th 3,3’,4,4’-benzophenone tetracarboxylic dianhydride(BDTA). The other was produced by the reaction of two kinds of diamine compounds consisting of diaminopolysiloxane and 4,4’-diamino -4”-hydroxytriphenylamine(DHTA) in various ratio with 3,3’,4, 4’-benzophenone tetracarboxylic dianhydride (BDTA). FTIR, UV, I.V., DSC, TGA and solubility test had been done to all ratio of polyimides. The photosensitive photoresist compositions were comprised by the above synthesized polyimide, a photo crosslinking agent(2,6-Dimethylol-4-methylphenol, DMMP) and a photo acid generator(triphenylsulfonium hexafluoroanti- monate salts, TSFA) to form the negative type polyimide photo- resist which can be developed with an aqueous alkali solution. Comparison of the photosensitive characteristics of above photoresists, it was found that the negative photoresist comprised of PI1(DHTM/DAPS = 70/30 or DHTM/DAPS = 60/40), 15% TSFA and 21% DMMP showed a sensitivity of 470 mJ/cm2(or 560 mJ/cm2) when the resist film was prebaked at 90℃ for 20 min, post exposure baked at 130℃ for 10 min and developed in 2.5% aqueous tetramethylammonium hydroxide(TMAH) at 60℃ for 30 min (or 35min). While the other photoresist which comprised of PI2(DHTA/ DAPS = 70/30 or DHTA/DAPS = 60/40), 15% TSFA and 21% DMMP exhibited a sensitivity of 607 mJ/cm2(or 720 mJ/cm2)when the resist film was prebaked at 90℃ for 20 min, post exposure baked at 130℃ for 10 min and developed in 2.5% aqueous tetramethyl- ammonium hydroxide(TMAH) at 60℃ for 40 min(or 50 min).By cont- rast,the sensitivity of PI1 is higher than PI2 for about 130 to 160 mJ/cm2.
Yeh, Chen-Yi, and 葉鎮熠. "Improvement of Photoresist Residuals Induced Wafer Edge Defects." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/d6r6bh.
Full text國立暨南國際大學
光電科技碩士學位學程在職專班
105
The purpose of photoresist development is to duplicate patterns on masks into photoresist layers and develop the patterns of photoresist accurately when sustaining acceptable adherence of photoresist. For advanced IC processes, this ability is a crucial index. This research focuses on cleaning chemical amplification photoresist remained at wafer edge during development processes after exposure. Chemical amplification photoresist requires a heating step after exposure (normally with temperature between 90 to 140 oC for one to two minutes) to alter the solubility of the film effectively. As the chemical generated after photoresist being exposed is an acid catalyst, this chemical could induce functional group reaction within photoresist during the process of post exposure bake (PEB) and not be consumed. Different photoresist characteristics and pattern density will affect the amount of photoresist dissolved after exposure. Development processes include developers reacting with photoresist and water clean. This research analyzes the number of times rinsed and the optimal development recipe to seek for the best rinse condition. Resolution of the original patterns was also closely watched during the experiments. Moreover, temperature control before and after exposure also needs to be careful. If the baking temperature is lower, photoresist will contain more solvent and will be developed rapidly. The critical dimension will not be easily controlled. On the other hand, if the photoresist contains less solvent, a higher exposure dose is required and the control of critical dimension could be more easily. After the completion of this experiment, particles are reduced and the yield is improved for 2.8 %.
Tiao-YangChen and 陳調陽. "Explore the efficiency of photoresist stripper using systemdynamics." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/x9b4jr.
Full text國立成功大學
工業與資訊管理學系碩士在職專班
107
This research makes use of the method of system dynamics to inquire into a photoresist stripper recovery rate, Because the photoresist stripper uses a procedure complicated, and is influenced by many different depletion sources, Change these parameters that consume and use a source all will produce the variety to the recovery rate, Have the high dynamic state variety，Therefore make use of the system dynamics software Vensim PLE to construct the photoresist stripper model, With the use current conditions that imitates a chemicals, And is carried on the simulate of each policy by the current conditions，With find out the best chemicals recovery rate method. This research puts great emphasis on the photoresists stripper recycle efficiency, And analyze three key factors：Adjust the air knife regulator, Establish exhaust condenser, and use SRS recycle system to increase the recovery rate. In addition, After carrying out the policy emulation, The Stripper recovery rate can promote to 77.6%。
CHEN, YING-CHIEH, and 陳盈介. "Using Recycled Photoresist to Manufacture TFT Gate Device." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/2c6by8.
Full text國立臺北科技大學
化學工程與生物科技系化學工程碩士班
107
The thin-film-transistor liquid-crystal display (TFT-LCD) is one of the government focus industries. Ever since the inception of TFT-LCD for more than two decades ago, it has become mature in the market. Therefore, it is imperative that our industry should find a better way to reduce the waste with increasingly attention to the impact around the ecosystem. The new generation factories (G6 and above) in Array will not generate the waste photoresist issue, but there are still more than 10 old generation factories produces thousands of tons of waste photoresist every year. This paper studies the equipment produced by the TFT-LCD four-generation factory, collects the discarded photoresist in the process and regenerated it, and manufactures TFT gate device by recycle photoresist. By collecting data during the process of mass production, this paper uses the statistically method to analyze the data. In order to make sure the quality of the products not impacted by the reuse of the recycle photoresist, we not only confirm size of the pattern but also add the electronic test of the TFT device. The use of recycled photoresist for manufacturing not only enhances the company's competitiveness, but also fulfills corporate responsibility for friendly environment and environmental issues.
Chen, Ji-Wei, and 陳志偉. "The Study of Photoresist Removal Mechanism by Ozone." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/35227272127949272579.
Full text國立交通大學
電子工程系
91
The Study of Photoresist Removal Mechanism by Ozone Student：Ji-Wei Chen Advisor：Dr. Jen-Chung Lou Department of Electronics Engineering & Institute of Electronics National Chiao Tung University Abstract Ozone has been studied in replacement of the mixture of sulfuric acid and peroxide used to remove residual photoresist after lithography in traditional IC process. Researches indicated that ozone is capable of quickly stripping photoresist so that ozone may be beneficial to apply in IC process. Due to the lack of systematic illustrations related to the photoresist removal mechanism by ozone, we will thoroughly investigate this mechanism so that we can propose the better conditions of photoresist stripping process to increase the reaction rates, reduce process time and cost of ownership. In the beginning, we proposed mechanism of diffusion layer between ozone and photoresist to illustrate the key point of the reaction rates. In experiments, we changed the aqueous ozone concentrations, flow rate of ozonated water, and [OH－] to study the mass transfer of ozone through the boundary layer. The results indicated that although aqueous ozone is strong oxidant aqueous ozone concentration should be raised to increase the reaction rate limited by ozone diffusion. The reactions of ozone with photoresist take place by the mass transfer of ozone to the photoresist so the increase of mass transfer of ozone is necessary. In photoresist stripping process, it is critical to raise mass transfer of ozone to the photoresist through the diffusion layer. At last, we increased the reaction rates by megasonic agitation or stirring. Instead of raising the aqueous ozone concentrations, we conducted the reduced diffusion layer to increase the mass transfer so that a faster reaction rate was achieved. In conclusion, raising the aqueous ozone concentrations, reducing [OH－], plus megasonic agitation can effectively remove the photoresist.
Philippou, Alexander [Verfasser]. "Mesoscopic and continuous photoresist development simulation / von Alexander Philippou." 2007. http://d-nb.info/992515955/34.
Full textHE, BANG-QING, and 何邦慶. "Studies of (Methacrylonitrile/Methacrylic acid) copolymer and polyimide photoresist." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/66522190044458190201.
Full textLU, JIN-YU, and 盧金鈺. "Studies on the syntheses, properties and application of photoresist." Thesis, 1989. http://ndltd.ncl.edu.tw/handle/16354795023329794450.
Full textHong, Shou-Mau, and 洪壽懋. "Synthesis and Characterization of Chemical Amplified Negative Tone Photoresist." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/75633918292421596759.
Full text國立成功大學
化學工程學系碩博士班
92
Alicyclic monomeric 7-oxa-bicyclo[2,2,1]hept-5-ene-2exo,3exo- dicarboxlic acid anhydride (OBCA) was synthesized through Dield-Alder reaction. Chiral (-)-bornyl methacrylate ((-)-BMA) was prepared from dehydrating esterification of (-)-borneol and methacrylic acid (MAA). Both acrylic monomers were then copolymerized with maleic anhydride (MA), and methyl methacrylate (MMA). The copolymers were used to prepared negative tone photoresist with PAG. Polymer pendent carboxylic groups were crosslinked through photoacid catalytic reactions. To improve the photo-crosslinking efficiency of the negative tone photoresist, 7-oxa- bicyclo[2,2,1]hept-5-ene-2,3-dicarboxlic acid mono-(2-hydroxy ethyl)ester (OBME) was synthesized and copolymerized with other comonomers. Synthesized alicyclic monomers were all confirmed using FTIR, EA and 1H-NMR. The □max of the alicyclic copolymers is around 220~300 nm. The copolymers can be applied on the field of g-line (436nm), i-line (365nm), and ArF (193nm) photoresists. Thermal properties and solubility in various alkaline aqueous solutions of the photoresists were all evaluated. The photosensitive and exposure characteristics of the photoresists prepared in this investigation were all estimated. The optimal sensitivity of 27mJ/cm2 and resolution of 0.5um was achieved. The stability and the reliability of the photoresist with copolymers synthesized in this investigation were all confirmed. Dry etching resistance of the prepared copolymers were compared with those of polystyrene and PMMA, Alicyclic aliphatic polymers prepared in this investigation were found to obviously improve the plasma etching resistance.
YU-TE, CHOU, and 周育德. "Analysis of Patent Map for Surfactant Applied in Photoresist." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/75539388310209431498.
Full text長庚大學
企業管理研究所
95
Photoresist is consisted of resin, hardened additive, hardened initiator, monomer, polymer and surfactant etc. It’s purpose is to define pattern. First, search patent map analysis of surfactant applied in photoresist by using patent analysis software on European Patent Office, to conduct detailed patent analysis of countries, companies, inventors, citation, patent family and IPC etc.. And combine results of technology life cycle and industry analysis data to realize the technology development trend of surfactant applied in photoresist. The results of this study: Japan, Korea and USA had published the most number of patents. Depend on numbers of citing and patent family, EP0062733 published by Shipley was most important, and applied by main photoresist suppliers. By IPC and technology life cycle analytic data, number of patents is the most in 2003, and then declined year by year. This study found that the technology has already located from maturity to declined stage. But marketing trend shows that value of photoresist products keep 10% grow rate by year from 2005, besides Japan and Korea plan to release new litho. technology, so it’s hoped that there will be a new S curve in the near future.