Relevant bibliographies by topics / Photonic devices

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Photonic devices'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Photonic devices"

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Wu, Xiaozhong, and Qinglei Guo. "Bioresorbable Photonics: Materials, Devices and Applications." Photonics 8, no. 7 (June 25, 2021): 235. http://dx.doi.org/10.3390/photonics8070235.

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Bio-photonic devices that utilize the interaction between light and biological substances have been emerging as an important tool for clinical diagnosis and/or therapy. At the same time, implanted biodegradable photonic devices can be disintegrated and resorbed after a predefined operational period, thus avoiding the risk and cost associated with the secondary surgical extraction. In this paper, the recent progress on biodegradable photonics is reviewed, with a focus on material strategies, device architectures and their biomedical applications. We begin with a brief introduction of biodegradable photonics, followed by the material strategies for constructing biodegradable photonic devices. Then, various types of biodegradable photonic devices with different functionalities are described. After that, several demonstration examples for applications in intracranial pressure monitoring, biochemical sensing and drug delivery are presented, revealing the great potential of biodegradable photonics in the monitoring of human health status and the treatment of human diseases. We then conclude with the summary of this field, as well as current challenges and possible future directions.
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Fehler, Konstantin G., Anna P. Ovvyan, Lukas Antoniuk, Niklas Lettner, Nico Gruhler, Valery A. Davydov, Viatcheslav N. Agafonov, Wolfram H. P. Pernice, and Alexander Kubanek. "Purcell-enhanced emission from individual SiV− center in nanodiamonds coupled to a Si3N4-based, photonic crystal cavity." Nanophotonics 9, no. 11 (July 10, 2020): 3655–62. http://dx.doi.org/10.1515/nanoph-2020-0257.

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AbstractHybrid quantum photonics combines classical photonics with quantum emitters in a postprocessing step. It facilitates to link ideal quantum light sources to optimized photonic platforms. Optical cavities enable to harness the Purcell-effect boosting the device efficiency. Here, we postprocess a free-standing, crossed-waveguide photonic crystal cavity based on Si3N4 with SiV− center in nanodiamonds. We develop a routine that optimizes the overlap with the cavity electric field utilizing atomic force microscope (AFM) nanomanipulation to attain control of spatial and dipole alignment. Temperature tuning further gives access to the spectral emitter-cavity overlap. After a few optimization cycles, we resolve the fine-structure of individual SiV− centers and achieve a Purcell enhancement of more than 4 on individual optical transitions, meaning that four out of five spontaneously emitted photons are channeled into the photonic device. Our work opens up new avenues to construct efficient quantum photonic devices.
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Zhang, Chuang, Chang-Ling Zou, Yan Zhao, Chun-Hua Dong, Cong Wei, Hanlin Wang, Yunqi Liu, Guang-Can Guo, Jiannian Yao, and Yong Sheng Zhao. "Organic printed photonics: From microring lasers to integrated circuits." Science Advances 1, no. 8 (September 2015): e1500257. http://dx.doi.org/10.1126/sciadv.1500257.

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A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.
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Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (August 1, 2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.

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AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.
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Wada, Kazumi. "A New Approach of Electronics and Photonics Convergence on Si CMOS Platform: How to Reduce Device Diversity of Photonics for Integration." Advances in Optical Technologies 2008 (July 7, 2008): 1–7. http://dx.doi.org/10.1155/2008/807457.

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Integrated photonics via Si CMOS technology has been a strategic area since electronics and photonics convergence should be the next platform for information technology. The platform is recently referred to as “Si photonics” that attracts much interest of researchers in industries as well as academia in the world. The main goal of Si Photonics is currently to reduce material diversity of photonic devices to pursuing CMOS-compatibility. In contrast, the present paper proposes another route of Si Photonics, reducing diversity of photonic devices. The proposed device unifying functionality of photonics is a microresonator with a pin diode structure that enables the Purcell effect and Franz-Keldysh effect to emit and to modulate light from SiGe alloys.
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Li, Jiang, Chaoyue Liu, Haitao Chen, Jingshu Guo, Ming Zhang, and Daoxin Dai. "Hybrid silicon photonic devices with two-dimensional materials." Nanophotonics 9, no. 8 (May 14, 2020): 2295–314. http://dx.doi.org/10.1515/nanoph-2020-0093.

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AbstractSilicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.
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Li, Chenlei, Dajian Liu, and Daoxin Dai. "Multimode silicon photonics." Nanophotonics 8, no. 2 (November 23, 2018): 227–47. http://dx.doi.org/10.1515/nanoph-2018-0161.

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AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.
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Du, Qingyang. "High energy radiation damage on silicon photonic devices: a review." Optical Materials Express 13, no. 2 (January 5, 2023): 403. http://dx.doi.org/10.1364/ome.476935.

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The past decade has witnessed the fast development of silicon photonics. Their superior performance compared with the electronic counterpart has made the silicon photonic device an excellent candidate for data communication, sensing, and computation. Most recently, there has been growing interest in implementing these devices in radiation harsh environments, such as nuclear reactors and outer space, where significant doses of high energy irradiation are present. Therefore, it is of paramount importance to fill in the “knowledge gap” of radiation induced damage in silicon photonic devices and provide mitigation solutions to fulfill the device endurance requirement. In this review, we introduce the damage mechanism and provide a survey on radiation induced effects on silicon photonic devices, including lasers, modulators, detectors, and passive waveguides. Finally, the mitigation strategies are discussed.
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He, Li, Huan Li, and Mo Li. "Optomechanical measurement of photon spin angular momentum and optical torque in integrated photonic devices." Science Advances 2, no. 9 (September 2016): e1600485. http://dx.doi.org/10.1126/sciadv.1600485.

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Photons carry linear momentum and spin angular momentum when circularly or elliptically polarized. During light-matter interaction, transfer of linear momentum leads to optical forces, whereas transfer of angular momentum induces optical torque. Optical forces including radiation pressure and gradient forces have long been used in optical tweezers and laser cooling. In nanophotonic devices, optical forces can be significantly enhanced, leading to unprecedented optomechanical effects in both classical and quantum regimes. In contrast, to date, the angular momentum of light and the optical torque effect have only been used in optical tweezers but remain unexplored in integrated photonics. We demonstrate the measurement of the spin angular momentum of photons propagating in a birefringent waveguide and the use of optical torque to actuate rotational motion of an optomechanical device. We show that the sign and magnitude of the optical torque are determined by the photon polarization states that are synthesized on the chip. Our study reveals the mechanical effect of photon’s polarization degree of freedom and demonstrates its control in integrated photonic devices. Exploiting optical torque and optomechanical interaction with photon angular momentum can lead to torsional cavity optomechanics and optomechanical photon spin-orbit coupling, as well as applications such as optomechanical gyroscopes and torsional magnetometry.
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Asano, Takashi, and Susumu Noda. "Photonic Crystal Devices in Silicon Photonics." Proceedings of the IEEE 106, no. 12 (December 2018): 2183–95. http://dx.doi.org/10.1109/jproc.2018.2853197.

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Dissertations / Theses on the topic "Photonic devices"

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Sánchez, Diana Luis David. "High performance photonic devices for switching applications in silicon photonics." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/77150.

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El silicio es la plataforma más prometedora para la integración fotónica, asegurando la compatibilidad con los procesos de fabricación CMOS y la producción en masa de dispositivos a bajo coste. Durante las últimas décadas, la tecnología fotónica basada en la plataforma de silicio ha mostrado un gran crecimiento, desarrollando diferentes tipos de dispositivos ópticos de alto rendimiento. Una de las posibilidades para continuar mejorando las prestaciones de los dispositivos fotónicos es mediante la combinación con otras tecnologías como la plasmónica o con nuevos materiales con propiedades excepcionales y compatibilidad CMOS. Las tecnologías híbridas pueden superar las limitaciones de la tecnología de silicio, dando lugar a nuevos dispositivos capaces de superar las prestaciones de sus homólogos electrónicos. La tecnología híbrida dióxido de vanadio/ silicio permite el desarrollo de dispositivos de altas prestaciones, con gran ancho de banda, mayor velocidad de operación y mayor eficiencia energética con dimensiones de la escala de la longitud de onda. El objetivo principal de esta tesis ha sido la propuesta y desarrollo de dispositivos fotónicos de altas prestaciones para aplicaciones de conmutación. En este contexto, diferentes estructuras basadas en silicio, tecnología plasmónica y las propiedades sintonizables del dióxido de vanadio han sido investigadas para controlar la polarización de la luz y para desarrollar otras funcionalidades electro-ópticas como la modulación.
Silicon is the most promising platform for photonic integration, ensuring CMOS fabrication compatibility and mass production of cost-effective devices. During the last decades, photonic technology based on the Silicon on Insulator (SOI) platform has shown a great evolution, developing different sorts of high performance optical devices. One way to continue improving the performance of photonic optical devices is the combination of the silicon platform with another technologies like plasmonics or CMOS compatible materials with unique properties. Hybrid technologies can overcome the current limits of the silicon technology and develop new devices exceeding the performance metrics of its counterparts electronic devices. The vanadium dioxide/silicon hybrid technology allows the development of new high-performance devices with broadband performance, faster operating speed and energy efficient optical response with wavelength-scale device dimensions. The main goal of this thesis has been the proposal and development of high performance photonic devices for switching applications. In this context, different structures, based on silicon, plasmonics and the tunable properties of vanadium dioxide, have been investigated to control the polarization of light and for enabling other electro-optical functionalities, like optical modulation.
El silici és la plataforma més prometedora per a la integració fotònica, assegurant la compatibilitat amb els processos de fabricació CMOS i la producció en massa de dispositius a baix cost. Durant les últimes dècades, la tecnologia fotònica basada en la plataforma de silici ha mostrat un gran creixement, desenvolupant diferents tipus de dispositius òptics d'alt rendiment. Una de les possibilitats per a continuar millorant el rendiment dels dispositius fotònics és per mitjà de la combinació amb altres tecnologies com la plasmònica o amb nous materials amb propietats excepcionals i compatibilitat CMOS. Les tecnologies híbrides poden superar les limitacions de la tecnologia de silici, donant lloc a nous dispositius capaços de superar el rendiment dels seus homòlegs electrònics. La tecnologia híbrida diòxid de vanadi/silici permet el desenvolupament de dispositius d'alt rendiment, amb gran ample de banda, major velocitat d'operació i major eficiència energètica en l'escala de la longitud d'ona. L'objectiu principal d'esta tesi ha sigut la proposta i desenvolupament de dispositius fotònics d'alt rendiment per a aplicacions de commutació. En este context, diferents estructures basades en silici, tecnologia plasmònica i les propietats sintonitzables del diòxid de vanadi han sigut investigades per a controlar la polarització de la llum i per a desenvolupar altres funcionalitats electró-òptiques com la modulació.
Sánchez Diana, LD. (2016). High performance photonic devices for switching applications in silicon photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/77150
TESIS
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Zhou, Ying. "CHOLESTERIC LIQUID CRYSTAL PHOTONIC CRYSTAL LASERS AND PHOTONIC DEVICES." Doctoral diss., University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2706.

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This dissertation discusses cholesteric liquid crystals (CLCs) and polymers based photonic devices including one-dimensional (1D) photonic crystal lasers and broadband circular polarizers. CLCs showing unique self-organized chiral structures have been widely used in bistable displays, flexible displays, and reflectors. However, the photonic band gap they exhibit opens a new way for generating laser light at the photonic band edge (PBE) or inside the band gap. When doped with an emissive laser dye, cholesteric liquid crystals provide distributed feedback so that mirrorless lasing is hence possible. Due to the limited surface anchoring, the thickness of gain medium and feedback length is tens of micrometers. Therefore lasing efficiency is quite limited and laser beam is highly divergent. To meet the challenges, we demonstrated several new methods to enhance the laser emission while reducing the beam divergence from a cholesteric liquid crystal laser. Enhanced laser emission is demonstrated by incorporating a single external CLC reflector as a polarization conserved reflector. Because the distributed feedback from the active layer is polarization selective, a CLC reflector preserves the original polarization of the reflected light and a further stimulated amplification ensues. As a result of virtually doubled feedback length, the output is dramatically enhanced in the same circular polarization state. Meanwhile, the laser beam divergence is dramatically reduced due to the increased cavity length from micrometer to millimeter scale. Enhanced laser emission is also demonstrated by the in-cell metallic reflector because the active layer is pumped twice. Unlike a CLC reflector, the output from a mirror-reflected CLC laser is linearly polarized as a result of coherent superposition of two orthogonal circular polarization states. The output linear polarization direction can be well controlled and fine tuned by varying the operating temperature and cell gap. Enhanced laser emission is further demonstrated in a hybrid photonic band edge - Fabry-Perot (FP) type structure by sandwiching the CLC active layer within a circular polarized resonator consisting of two CLC reflectors. The resonator generates multiple FP modes while preserving the PBE mode from the active layer. More importantly this band edge mode can be greatly enhanced by the external resonator under some conditions. Theoretical analysis is conducted based on 4×4 transfer matrix and scattering matrix and the results are consistent with our experimental observations. To make the CLC laser more compact and miniaturized, we have developed a flexible polymer laser using dye-doped cholesteric polymeric films. By stacking the mirror reflecting layer, the active layer and the CLC reflecting layer, enhanced laser emission was observed in opposite-handed circular polarization state, because of the light recycling effect. On the other hand, we use the stacked cholesteric liquid crystal films, or the cholesteric liquid crystals and polymer composite films to demonstrate the single film broadband circular polarizers, which are helpful for converting a randomly polarized light into linear polarization. New fabrication methods are proposed and the circular polarizers cover ~280 nm in the visible spectral range. Both theoretical simulation and experimental results are presented with a good match.
Ph.D.
Optics and Photonics
Optics and Photonics
Optics PhD
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Zhou, Yaling. "Photonic Devices Fabricated with Photonic Area Lithographically Mapped Process." University of Cincinnati / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1233528818.

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Forsberg, Erik. "Electronic and Photonic Quantum Devices." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3476.

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In this thesis various subjects at the crossroads of quantummechanics and device physics are treated, spanning from afundamental study on quantum measurements to fabricationtechniques of controlling gates for nanoelectroniccomponents.

Electron waveguide components, i.e. electronic componentswith a size such that the wave nature of the electron dominatesthe device characteristics, are treated both experimentally andtheoretically. On the experimental side, evidence of partialballistic transport at room-temperature has been found anddevices controlled by in-plane Pt/GaAs gates have beenfabricated exhibiting an order of magnitude improvedgate-efficiency as compared to an earlier gate-technology. Onthe theoretical side, a novel numerical method forself-consistent simulations of electron waveguide devices hasbeen developed. The method is unique as it incorporates anenergy resolved charge density calculation allowing for e.g.calculations of electron waveguide devices to which a finitebias is applied. The method has then been used in discussionson the influence of space-charge on gate-control of electronwaveguide Y-branch switches.

Electron waveguides were also used in a proposal for a novelscheme of carrierinjection in low-dimensional semiconductorlasers, a scheme which altogether by- passes the problem ofslow carrier relaxation in suchstructures. By studying aquantum mechanical two-level system serving as a model forelectroabsorption modulators, the ultimate limits of possiblemodulation rates of such modulators have been assessed andfound to largely be determined by the adiabatic response of thesystem. The possibility of using a microwave field to controlRabi oscillations in two-level systems such that a large numberof states can be engineered has also been explored.

A more fundamental study on quantum mechanical measurementshas been done, in which the transition from a classical to aquantum "interaction free" measurement was studied, making aconnection with quantum non-demolition measurements.

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Alonzo, Massimo. "Photonic devices in solitonic waveguides." Phd thesis, Université de Metz, 2010. http://tel.archives-ouvertes.fr/tel-00557947.

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La thèse montre des solutions pour la réalisation de circuits photoniques intégrés utilisant le caractère volumétrique et les très faibles pertes en propagation des solitons spatiaux . On s'intéresse aux élément de base: interconnections, sources et router optique (comme dispositif d'élaboration). Interconnections et sources sont réalisé dans le niobat de lithium (LN) qui fournis des structures avec une très longe durée temporelle. Le fonctionnement d'un router optique est démontré dans le semiconducteur photorefractif (PR) InP:Fe en raison de sa sensitivité aux longueurs d'onde infrarouges (IR) et à son temps de réponse rapide. On montre que les pertes en propagation dans les interconnections solitoniques peuvent être réduites à nouveau en utilisant un faisceau en polarisation ordinaire qui augmente la variation d'indice de réfraction induite. La réalisation de sources intégrées solitoniques est étudié pour avoir émission en bleu à 400nm et en IR à 1530nm. Celles en bleu sont obtenues par génération de deuxième harmonique ; le rôle du bleu pour la formation des solitons est montré et ses propriété physiques étudiées. Celles en IR sont obtenues en dopant le LN avec des ions (actifs) d'erbium. Leurs effets sur les paramètres PR sont présentés et les solitons spatiaux sont obtenus en excitant l'absorption soit du LN soit de l'erbium. L'amplification de la luminescence est étudié numériquement. Le routage optique dans le InP :Fe est obtenu en faisant interagir deux solitons cohérents et en changeant leur phase relative. L'augmentation de la séparation ou leur fusion est analysé en fonctionne de la distance entre eux, température et intensité de la lumière.
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Liu, Tao. "Photonic Crystal Based Optical Devices." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1294%5F1%5Fm.pdf&type=application/pdf.

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Fan, Yun-Hsing. "TUNABLE LIQUID CRYSTAL PHOTONIC DEVICES." Doctoral diss., University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3926.

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Liquid crystal (LC)-based adaptive optics are important for information processing, optical interconnections, photonics, integrated optics, and optical communications due to their tunable optical properties. In this dissertation, we describe novel liquid crystal photonic devices and their fabrication methods. The devices presented include inhomogeneous polymer-dispersed liquid crystal (PDLC), polymer network liquid crystals (PNLC) and phase-separated composite film (PSCOF). Liquid crystal/polymer composites could exist in different forms depending on the fabrication conditions. In Chap. 3, we demonstrate a novel nanoscale PDLC device that has inhomogeneous droplet size distribution. In such a PDLC, the inhomogeneous droplet size distribution is obtained by exposing the LC/monomer with a non-uniform ultraviolet (UV) light. An electrically tunable-efficiency Fresnel lens is devised for the first time using nanoscale PDLC. The tunable Fresnel lens is very desirable to eliminate the need of external spatial light modulator. Different gradient profiles are obtained by using different photomasks. The nanoscale LC droplets are randomly distributed within the polymer matrix, so that the devices are polarization independent and exhibit a fast response time. Because of the small droplet sizes, the operating voltage is higher than 100 Vrms. To lower the driving voltage, in Chap. 2 and Chap. 3, we have investigated a polymer-network liquid crystal (PNLC) using a rod-like monomer structure. Since the monomer concentration is only about 5%, the operating voltage is below 10 Vrms. The PNLC devices are polarization dependent. To overcome this shortcoming, stacking two cells with orthogonal alignment directions is a possibility. In Chap. 3, another approach to lower the operating voltage is to use phase-separated composite film (PSCOF) where the LC and polymer are separated completely to form two layers. Without multi-domain formed in the LC cell, PSCOF is free from light scattering. Using PNLC and PSCOF, we also demonstrated LC blazed grating and Fresnel lens. The diffraction efficiency of these devices is continuously controlled by the electric field. Besides Fresnel lens, another critical need for imaging and display is to develop a system with continuously tunable focal length. A conventional zooming system controls the lens distance by mechanical motion along the optical axis. This mechanical zooming system is bulky and power hungry. To overcome the bulkiness, in Chap. 4 we developed an electrically tunable-focus flat LC spherical lens which consists of a spherical electrode imbedded in the top flat substrates while a planar electrode on the bottom substrate. The electric field from the spherical and planar electrodes induces a centrosymmetric gradient refractive index distribution within the LC layer which, in turn, causes the focusing effect. The focal length is tunable by the applied voltage. A tunable range from 0.6 m to infinity is achieved. Microlens array is an attractive device for optical communications and projection displays. In Chap. 5, we describe a LC microlens array whose focal length can be switched from positive to negative or vise versa by the applied voltage. The top spherical electrode glass substrate is flattened with a polymer layer. The top convex substrate and LC layer work together like a zoom lens. By tuning the refractive index profile of the LC layer, the focal length of the microlens array can be switched from positive to negative or vise versa. The tunable LC microlens array would be a great replacement of a conventional microlens array which can be moved by mechanical elements. The fast response time feature of our LC microlens array will be very helpful in developing 3-D animated images. A special feature for LC/polymer composites is light scattering. The concept is analogous to the light scattering of clouds which consist of water droplets. In Chap. 6, we demonstrate polymer network liquid crystals for switchable polarizers and optical shutters. The PNLC can present anisotropic or isotropic light scattering behavior depending on the fabrication methods. The use of dual-frequency liquid crystal and special driving scheme leads to a sub-millisecond response time. The applications for display, light shutters, and switchable windows are emphasized. Although polymer networks help to reduce liquid crystal response time, they tend to scatter light. In Chap. 7, for the first time, we demonstrate a fast-response and scattering-free homogeneously-aligned PNLC light modulator. Light scattering in the near-infrared region is suppressed by optimizing the polymer concentration such that the network domain sizes are smaller than the wavelength. As a result, the PNLC response time is ~300X faster than that of a pure LC mixture except that the threshold voltage is increased by ~25X. The PNLC cell also holds promise for mid and long infrared applications where response time is a critical issue.
Ph.D.
Other
Optics and Photonics
Optics
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Scardaci, Vittorio. "Carbon nanotubes for photonic devices." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612536.

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Gallacher, Kevin. "Germanium on silicon photonic devices." Thesis, University of Glasgow, 2013. http://theses.gla.ac.uk/4994/.

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There is presently increased interest in using germanium (Ge) for both electronic and optical devices on top of silicon (Si) substrates to expand the functionality of Si technology. It has been extremely difficult to form an Ohmic contact to n-Ge due to Fermi level pinning just above the Valence band. A low temperature nickel process has been developed that produces Ohmic contacts to n-Ge with a specific contact resistivity of , which to date is a record. The low contact resistivity is attributed to the low resistivity NiGe phase, which was identified using electron diffraction in a transmission electron microscope. Light emission from Ge light emitting diodes (LEDs) was investigated. Ge is an indirect bandgap semiconductor but the difference in energy between the direct and indirect is small (~136 meV), through a combination of n-type doping and tensile strain, the band structure can be engineered to produce a more direct bandgap material. A silicon nitride (Si3N4) process has been developed that imparts tensile strain into the Ge. The stress in the Si3N4 film can be controlled by the RF power used during the plasma enhanced chemical vapour deposition. LEDs covered with Si3N4 stressors were characterised by Fourier transform infrared spectroscopy. Electroluminescence characterisation (EL) revealed that the peak position of the direct and indirect radiative transitions did not vary with the Si3N4 stressors due to the device geometries being too large. Therefore, nanostructures consisting of pillars smaller than a micron were investigated. Photoluminescence characterisation of 100 nm Ge pillars with Si3N4 stressors show emission at much longer wavelengths compared to bulk Ge (> 2.2 μm). In addition, the EL from Ge quantum wells grown on Si was also investigated. EL characterisation demonstrates two peaks around 1.55 and 1.8 μm, which corresponds to the radiative recombination between the direct and indirect transitions, respectively. This result is the first demonstration of EL above 1.45 μm for Ge quantum wells. Finally, the fabrication of Ge-on-Si single-photon avalanche detectors are presented. A single-photon detection efficiency of 4 % at 1310 nm wavelength was measured at low temperature (100 K). The devices have the lowest reported noise equivalent power for a Ge-on-Si single-photon avalanche detector (1×10-14 WHz-1/2).
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Raghunathan, Varun. "Raman-based silicon photonic devices." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1481677321&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Books on the topic "Photonic devices"

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Guekos, George, ed. Photonic Devices for Telecommunications. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-59889-0.

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Physics of photonic devices. 2nd ed. Hoboken, N.J: John Wiley & Sons, 2009.

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Passaro, Vittorio M. N. Modeling of photonic devices. New York: Nova Science Publishers, 2009.

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Hirao, Kazuyuki, Tsuneo Mitsuyu, Jinhai Si, and Jianrong Qiu, eds. Active Glass for Photonic Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04603-6.

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Bhandarkar, Suhas, ed. Advances in Photonic Materials and Devices. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9781118407233.

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Hua, Yan. Development of photonic-based measurement devices. Salford: University of Salford, 1996.

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P, Andrews Mark, Najafi S. Iraj, and Society of Photo-optical Instrumentation Engineers., eds. Sol-gel and polymer photonic devices. Bellingham, Wash., USA: SPIE Optical Engineering Press, 1997.

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W, Waynant Ronald, Lowell John, IEEE Circuits and Systems Society., and Components, Packaging & Manufacturing Technology Society., eds. Electronic and photonic circuits and devices. New York: Institute of Electrical and Electronics Engineers, 1999.

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Zhu, Xiaoliang. Systems Engineering for Silicon Photonic Devices. [New York, N.Y.?]: [publisher not identified], 2015.

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Silicon Photonic Devices and Their Applications. [New York, N.Y.?]: [publisher not identified], 2015.

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Book chapters on the topic "Photonic devices"

1

Li, Sheng S. "Photonic Devices." In Semiconductor Physical Electronics, 327–90. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0489-0_12.

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Kawakami, Yoichi, Satoshi Kamiyama, Gen-Ichi Hatakoshi, Takashi Mukai, Yukio Narukawa, Ichirou Nomura, Katsumi Kishino, et al. "Photonic Devices." In Wide Bandgap Semiconductors, 97–230. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_3.

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Vengsarkar, Ashish M. "Optical Fiber Devices." In Photonic Networks, 133–40. London: Springer London, 1997. http://dx.doi.org/10.1007/978-1-4471-0979-2_12.

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Baba, T. "Photonic Crystal Devices." In Photonic Crystals, 237–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-40032-5_11.

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Solgaard, Olav. "Fiber and Waveguide Devices." In Photonic Microsystems, 1–72. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-68351-5_6.

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Wakita, Koichi. "Photonic Switching Devices." In Semiconductor Optical Modulators, 145–63. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-6071-5_6.

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Cheng, Keh Yung. "Heterostructure Photonic Devices." In III–V Compound Semiconductors and Devices, 419–514. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_10.

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Fu, Hongbing. "Organic Photonic Devices." In Organic Optoelectronics, 351–74. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch7.

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Vitiello, Miriam S. "Terahertz Photonic Devices." In NATO Science for Peace and Security Series B: Physics and Biophysics, 91–111. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-8828-1_5.

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Valle, Giuseppe Della, and Roberto Osellame. "Active Photonic Devices." In Topics in Applied Physics, 265–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23366-1_10.

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Conference papers on the topic "Photonic devices"

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Wong, Chee Wei, Xiaodong Yang, James F. McMillan, and Chad A. Husko. "Photonic crystals and silicon photonics." In Integrated Optoelectronic Devices 2006, edited by Louay A. Eldada and El-Hang Lee. SPIE, 2006. http://dx.doi.org/10.1117/12.652641.

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"Photonic devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548475.

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"Photonic devices." In 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999497.

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Yokoyama, Shiyoshi, Shinichiro Inoue, and Kensuke Sasaki. "Two-photon polymer laser writing in the photonic crystal." In Photonic Devices + Applications, edited by Rachel Jakubiak. SPIE, 2008. http://dx.doi.org/10.1117/12.794281.

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Clays, Koen, Kasper Baert, Mark Van der Auweraer, and Renaud Vallée. "Photonic superlattices for photonic crystal lasers." In Photonic Devices + Applications, edited by Jean-Michel Nunzi. SPIE, 2007. http://dx.doi.org/10.1117/12.730699.

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De La Rue, Richard M. "Photonic Crystal and Periodic Photonic Wire Microcavity Devices for VLSI Photonics." In MICRORESONATORS AS BUILDING BLOCKS FOR VLSI PHOTONICS: International School of Quantum Electronics, 39th Course. AIP, 2004. http://dx.doi.org/10.1063/1.1764025.

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Chu, Tao. "Silicon Photonic Devices." In JSAP-OSA Joint Symposia. Washington, D.C.: Optica Publishing Group, 2017. http://dx.doi.org/10.1364/jsap.2017.6p_a410_6.

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Accompanying the rapid developments of the big-data society and the network of the things, novel technologies for constructing high-speed and low-power-consumption data processing and communication systems are highly demanded. Silicon photonic integration is widely regarded as one of the most promising ways in various applications, due to the low-cost and high-density-integration of silicon photonic devices. Many novel photonic devices based on silicon-on-insulator waveguides were developed. Here, some novel silicon photonic devices will be introduced, including silicon digital/analog modulators, wavelength MUX/DeMUX devices of AWG and EDG, Mode MUX/DeMUX devices, polarization controlling devices, and large-scale EO/TO silicon optical switches. [1-5].
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Petruzzella, Maurangelo, Simone Birindelli, Francesco M. Pagliano, Daniele Pellegrino, Zarko Zobenica, Michele Cotrufo, Frank W. M. van Otten, et al. "Single photons from electrically driven reconfigurable photonic crystal cavities (Conference Presentation)." In Quantum Photonic Devices, edited by Mario Agio, Kartik Srinivasan, and Cesare Soci. SPIE, 2017. http://dx.doi.org/10.1117/12.2277707.

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O’Brien, John, Wan Kuang, Jiang-Rong Cao, Min-Hsiung Shih, Woo Jun Kim, Nan-Kyung Suh, Andrew Stapleton, Zhi-Jian Wei, Sang-Jun Choi, and P. D. Dapkus. "Photonic Crystal Devices." In Frontiers in Optics. Washington, D.C.: OSA, 2004. http://dx.doi.org/10.1364/fio.2004.fmk5.

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"Nonreciprocal photonic devices." In 2013 IEEE Photonics Society Summer Topical Meeting Series. IEEE, 2013. http://dx.doi.org/10.1109/phosst.2013.6614432.

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Reports on the topic "Photonic devices"

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Clem, Paul Gilbert, Weng Wah Dr Chow, .), Ganapathi Subramanian Subramania, James Grant Fleming, Joel Robert Wendt, and Ihab Fathy El-Kady. 3D Active photonic crystal devices for integrated photonics and silicon photonics. Office of Scientific and Technical Information (OSTI), November 2005. http://dx.doi.org/10.2172/882052.

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Harris, James S. Quantum Well Devices for Photonic Networks. Fort Belvoir, VA: Defense Technical Information Center, October 1999. http://dx.doi.org/10.21236/ada378985.

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Forrest, Stephen. Very High Performance Organic Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, January 2008. http://dx.doi.org/10.21236/ada476377.

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Sharkawy, Ahmed, Shouyuan Shi, Caihua Chen, and Dennis Prather. Photonic Band Gap Devices for Commercial Applications. Fort Belvoir, VA: Defense Technical Information Center, October 2006. http://dx.doi.org/10.21236/ada459258.

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Adibi, Ali. Chip-Scale WDM Devices Using Photonic Crystals. Fort Belvoir, VA: Defense Technical Information Center, May 2006. http://dx.doi.org/10.21236/ada461016.

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Jiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, March 2002. http://dx.doi.org/10.21236/ada399578.

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Gauthier, D. J. Complexity-Enabled Sensor Networks and Photonic Switching Devices. Fort Belvoir, VA: Defense Technical Information Center, December 2008. http://dx.doi.org/10.21236/ada499602.

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Blair, Steve. Engineered Photonic Materials for Nanoscale Optical Logic Devices. Fort Belvoir, VA: Defense Technical Information Center, February 2004. http://dx.doi.org/10.21236/ada422569.

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Jiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, August 2001. http://dx.doi.org/10.21236/ada390015.

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Jiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada390174.

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