Journal articles on the topic 'Photonic and electro-optical devices'
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Li, Jiang, Chaoyue Liu, Haitao Chen, Jingshu Guo, Ming Zhang, and Daoxin Dai. "Hybrid silicon photonic devices with two-dimensional materials." Nanophotonics 9, no. 8 (May 14, 2020): 2295–314. http://dx.doi.org/10.1515/nanoph-2020-0093.
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AbstractSilicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.
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Babicheva, Viktoriia E., Alexandra Boltasseva, and Andrei V. Lavrinenko. "Transparent conducting oxides for electro-optical plasmonic modulators." Nanophotonics 4, no. 1 (June 16, 2015): 165–85. http://dx.doi.org/10.1515/nanoph-2015-0004.
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Abstract:The ongoing quest for ultra-compact optical devices has reached a bottleneck due to the diffraction limit in conventional photonics. New approaches that provide subwavelength optical elements, and therefore lead to miniaturization of the entire photonic circuit, are urgently required. Plasmonics, which combines nanoscale light confinement and optical-speed processing of signals, has the potential to enable the next generation of hybrid information-processing devices, which are superior to the current photonic dielectric components in terms of speed and compactness. New plasmonic materials (other than metals), or optical materials with metal-like behavior, have recently attracted a lot of attention due to the promise they hold to enable low-loss, tunable, CMOScompatible devices for photonic technologies. In this review, we provide a systematic overview of various compact optical modulator designs that utilize a class of the most promising new materials as the active layer or core— namely, transparent conducting oxides. Such modulators can be made low-loss, compact, and exhibit high tunability while offering low cost and compatibility with existing semiconductor technologies. A detailed analysis of different configurations and their working characteristics, such as their extinction ratio, compactness, bandwidth, and losses, is performed identifying the most promising designs.
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Chigrinov, Vladimir, Qi Guo, and Aleksey Kudreyko. "Photo-Aligned Ferroelectric Liquid Crystal Devices with Novel Electro-Optic Characteristics." Crystals 10, no. 7 (July 1, 2020): 563. http://dx.doi.org/10.3390/cryst10070563.
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This paper examines different applications of ferroelectric liquid crystal devices based on photo-alignment. Successful application of the photo-alignment technique is considered to be a critical breakthrough. A variety of display and photonic devices with azo dye aligned ferroelectric liquid crystals is presented: smart glasses, liquid crystal Pancharatnam–Berry phase optical elements, 2D/3D switchable lenses, and laser therapy devices. Comparison of electro-optical behavior of ferroelectric liquid crystals is described considering the performance of devices. This paper facilitates the optimization of device design, and broadens the possible applications in the display and photonic area.
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He, Li, Huan Li, and Mo Li. "Optomechanical measurement of photon spin angular momentum and optical torque in integrated photonic devices." Science Advances 2, no. 9 (September 2016): e1600485. http://dx.doi.org/10.1126/sciadv.1600485.
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Photons carry linear momentum and spin angular momentum when circularly or elliptically polarized. During light-matter interaction, transfer of linear momentum leads to optical forces, whereas transfer of angular momentum induces optical torque. Optical forces including radiation pressure and gradient forces have long been used in optical tweezers and laser cooling. In nanophotonic devices, optical forces can be significantly enhanced, leading to unprecedented optomechanical effects in both classical and quantum regimes. In contrast, to date, the angular momentum of light and the optical torque effect have only been used in optical tweezers but remain unexplored in integrated photonics. We demonstrate the measurement of the spin angular momentum of photons propagating in a birefringent waveguide and the use of optical torque to actuate rotational motion of an optomechanical device. We show that the sign and magnitude of the optical torque are determined by the photon polarization states that are synthesized on the chip. Our study reveals the mechanical effect of photon’s polarization degree of freedom and demonstrates its control in integrated photonic devices. Exploiting optical torque and optomechanical interaction with photon angular momentum can lead to torsional cavity optomechanics and optomechanical photon spin-orbit coupling, as well as applications such as optomechanical gyroscopes and torsional magnetometry.
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Wei, Xing, and Samuel Kesse. "Heterogeneously Integrated Photonic Chip on Lithium Niobate Thin-Film Waveguide." Crystals 11, no. 11 (November 12, 2021): 1376. http://dx.doi.org/10.3390/cryst11111376.
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Lithium niobate thin film represents as an ideal material substrate for quantum photonics due to its strong electro-optic effect and high-speed modulation capability. Here, we propose a novel platform which heterogeneously integrates single self-assembled InAs/GaAs quantum dots for a single-photon source on a lithium niobate photonic chip. The InAs/GaAs quantum dots can be transferred to the lithium niobate waveguide via a substrate transfer procedure with nanometer precision and be integrated through van der Waals force. A down-tapered structure is designed and optimized to deliver the photon flux generated from the InAs quantum dots embedded in a GaAs waveguide to the lithium niobate waveguide with an overall efficiency of 42%. In addition, the electro-optical effect is used to tune, and therefore to tune the beam splitting ratio of the integrated lithium niobate directional coupler, which can simultaneously route multiple photons to different spatial modes, and subsequently fan out through grating couplers to achieve single-photon sub-multiplexing. The proposed device opens up novel opportunities for achieving multifunctional hybrid integrated photonic chips.
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M, Sivasindhu, and P. Samundiswary. "Performance evaluation of GaAs photonic crystal based directional coupler all optical switch." International Journal of Engineering & Technology 7, no. 3.29 (August 24, 2018): 220. http://dx.doi.org/10.14419/ijet.v7i3.29.18799.
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In future, the telecommunication systems will be totally based upon the photonic integrated circuits and components for the transmission of optical signals. Since optical signals offer high speed, less delay and higher efficiency. This introduces a new research area for photonic crystal based optical components like optical switch, multiplexer, optical filters etc. Among these devices, the optical switch draws more attention due to its primary switching operation. Hence, this paper deals with the modified design structure of GaAs photonic crystal based directional coupler all optical switch which operates at the wavelength of 1300nm. Further the switching performance evaluation of this device is made for both electro optic effect and non-linear optical effect. The design and simulation of the optical switch is done through Comsol Multiphysics software.
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Ghoshal, S. K., and H. S. Tewari. "Photonic applications of Silicon nanostructures." Material Science Research India 7, no. 2 (February 8, 2010): 381–88. http://dx.doi.org/10.13005/msri/070207.
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This presentation highlights of some scientific insights on the possibilities of photonic applications of silicon nanostructures (NSs) one of the most fertile research field in nano-crystallite physics that has innumerable possibilities of device applications. Nanostructured silicon is generic name used for porous Si (p-Si) as well as Si nanocrystals (NC-Si) having length scale of the order of few nanometer. The emission of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) from low-dimensional silicon has opened up new avenue in recent years. It is important from a fundamental physics viewpoint because of the potential application of Si wires and dots in opto-electronics devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such NSs. Future nano-technology would replace electrical with optical interconnects that has appealing potentialities for higher-speed performance and immunity to signal cross talk. A varieties of applications includes LD, LED, solar cells, sensors, photonic band gap devices and Fibonacci quasi-crystals, to cite a few.
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Kawanishi, Tetsuya, Atsushi Kanno, Pham Tien Dat, Toshimasa Umezawa, and Naokatsu Yamamoto. "Photonic Systems and Devices for Linear Cell Radar." Applied Sciences 9, no. 3 (February 7, 2019): 554. http://dx.doi.org/10.3390/app9030554.
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This paper reviews linear cell radar systems, which are radar systems consisting of many antenna units connected by radio-over-fiber to monitor linear-shaped areas. A linear cell system using a millimeter-wave band can provide high-resolution imaging for foreign object detection on runways. Electro-optic devices play important roles in linear cell systems to provide a conversion between optical and electric signals. This paper describes overviews of such devices including light sources, photodetectors, and optical modulators, etc.
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Lu, Zhaolin, Kaifeng Shi, and Peichuan Yin. "Photonic MOS Based on “Optical Property Inversion”." MRS Advances 1, no. 23 (December 11, 2015): 1657–69. http://dx.doi.org/10.1557/adv.2015.5.
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Most dielectric materials have very weak electro-optic properties, whereas the optical properties of some plasmonic materials may be greatly tuned, especially around their plasma frequency, where dielectric constant is transiting between positive (“dielectric state”) and negative (“metallic state”) values. In this talk, we will review some of our recent work on electro-optical modulation and introduce a new concept, photonic MOS based on “optical property inversion”. This concept may provide inspiration for the development of nanophotonic devices. While the whole paper only discusses theory and modelling, some new experimental results will be presented in the on-site talk. Throughout this report, “static dielectric constant”,ɛ, refers to material dielectric constant in the DC or radio frequency (RF) regime; “optical dielectric constant”,ε, represents material dielectric constant in the near-infrared regime. This paper was re-written based on an Arxiv file [1].
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Wang, Yan, Tongtong Liu, Jiangyi Liu, Chuanbo Li, Zhuo Chen, and Shuhui Bo. "Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators." Journal of Semiconductors 43, no. 10 (October 1, 2022): 101301. http://dx.doi.org/10.1088/1674-4926/43/10/101301.
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Abstract High performance electro-optic modulator, as the key device of integrated ultra-wideband optical systems, have become the focus of research. Meanwhile, the organic-based hybrid electro-optic modulators, which make full use of the advantages of organic electro-optic (OEO) materials (e.g. high electro-optic coefficient, fast response speed, high bandwidth, easy processing/integration and low cost) have attracted considerable attention. In this paper, we introduce a series of high-performance OEO materials that exhibit good properties in electro-optic activity and thermal stability. In addition, the recent progress of organic-based hybrid electro-optic devices is reviewed, including photonic crystal-organic hybrid (PCOH), silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) modulators. A high-performance integrated optical platform based on OEO materials is a promising solution for growing high speeds and low power consumption in compact sizes.
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Singh, Jagmeet, Hugh Morison, Zhimu Guo, Bicky A. Marquez, Omid Esmaeeli, Paul R. Prucnal, Lukas Chrostowski, Sudip Shekhar, and Bhavin J. Shastri. "Neuromorphic photonic circuit modeling in Verilog-A." APL Photonics 7, no. 4 (April 1, 2022): 046103. http://dx.doi.org/10.1063/5.0079984.
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One of the significant challenges in neuromorphic photonic architectures is the lack of good tools to simulate large-scale photonic integrated circuits. It is crucial to perform simulations on a single platform to capture the circuit’s behavior in the presence of both optical and electrical components. Here, we adopted a Verilog-A based approach to model neuromorphic photonic circuits by considering both the electrical and optical properties. Verilog-A models for the primary optical devices, such as lasers, couplers, waveguides, phase shifters, and photodetectors, are discussed, along with studying the composite devices such as microring resonators. Model parameters for different optical devices are extracted and tuned by analyzing the measured data. The simulated and experimental results are also compared for validation of Verilog-A models. Finally, a single photonic neuron circuit is simulated by implementing input, weight, and non-linear activation function by using lasers, microring resonators, and modulator, respectively. Electro-optical rapid co-simulation would significantly improve the efficiency of optimizing the devices and provide an accurate simulation of the circuit performance.
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Gostimirovic, Dusan, and Richard Soref. "An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components." Sensors 23, no. 2 (January 5, 2023): 626. http://dx.doi.org/10.3390/s23020626.
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In this work, we demonstrate a compact toolkit of inverse-designed, topologically optimized silicon photonic devices that are arranged in a “plug-and-play” fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2 × 2 3-dB splitter/combiner, a 2 × 2 waveguide crossover, and a 2 × 2 all-forward add–drop resonator. The resonator can become a 2 × 2 electro-optical crossbar switch by means of the thermo-optical effect, phase-change cladding, or free-carrier injection. For each of the ten circuits demonstrated in this work, the toolkit of photonic devices enables the compact circuit to achieve low insertion loss and low crosstalk. By adopting the sophisticated inverse-design approach, the design structure, shape, and sizing of each individual device can be made more flexible to better suit the architecture of the greater circuit. For a compact architecture, we present a unified, parallel waveguide circuit framework into which the devices are designed to fit seamlessly, thus enabling low-complexity circuit design.
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Li, Qingyun, Honghu Zhang, Houbin Zhu, and Hui Hu. "Characterizations of Single-Crystal Lithium Niobate Thin Films." Crystals 12, no. 5 (May 6, 2022): 667. http://dx.doi.org/10.3390/cryst12050667.
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Single-crystal lithium niobate thin films (lithium niobate on insulator, LNOI) are becoming a new material platform for integrating photonics. Investigation into the physical properties of LNOI is important for the design and fabrication of photonic devices. Herein, LNOIs were prepared by two methods: ion implantation and wafer bonding; and wafer bonding and grinding. High-resolution X-ray diffraction (HRXRD) and confocal Raman spectroscopy were used to study the LNOI lattice properties. The full-width at half-maximum (FWHM) of HRXRD and Raman spectra showed a regular crystal lattice arrangement of the LNOIs. The domain inversion voltage and electro-optical coefficient of the LNOIs were close to those of LN bulk material. This study provides useful information for LNOI fabrication and for photonic devices in LNOI.
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Benoit, J., C. Barthou, P. Benalloul, and K. Polamo. "The electro-optical behavior of SrS:Ce electroluminescent devices under photonic excitation." Journal of Applied Physics 87, no. 1 (January 2000): 198–202. http://dx.doi.org/10.1063/1.371844.
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Suzuki, S., and K. Kasahara. "Electro-photonic devices for gigabit networks." IEEE LTS 3, no. 3 (August 1992): 36–40. http://dx.doi.org/10.1109/80.167002.
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Fehler, Konstantin G., Anna P. Ovvyan, Lukas Antoniuk, Niklas Lettner, Nico Gruhler, Valery A. Davydov, Viatcheslav N. Agafonov, Wolfram H. P. Pernice, and Alexander Kubanek. "Purcell-enhanced emission from individual SiV− center in nanodiamonds coupled to a Si3N4-based, photonic crystal cavity." Nanophotonics 9, no. 11 (July 10, 2020): 3655–62. http://dx.doi.org/10.1515/nanoph-2020-0257.
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AbstractHybrid quantum photonics combines classical photonics with quantum emitters in a postprocessing step. It facilitates to link ideal quantum light sources to optimized photonic platforms. Optical cavities enable to harness the Purcell-effect boosting the device efficiency. Here, we postprocess a free-standing, crossed-waveguide photonic crystal cavity based on Si3N4 with SiV− center in nanodiamonds. We develop a routine that optimizes the overlap with the cavity electric field utilizing atomic force microscope (AFM) nanomanipulation to attain control of spatial and dipole alignment. Temperature tuning further gives access to the spectral emitter-cavity overlap. After a few optimization cycles, we resolve the fine-structure of individual SiV− centers and achieve a Purcell enhancement of more than 4 on individual optical transitions, meaning that four out of five spontaneously emitted photons are channeled into the photonic device. Our work opens up new avenues to construct efficient quantum photonic devices.
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Zhang, Chuang, Chang-Ling Zou, Yan Zhao, Chun-Hua Dong, Cong Wei, Hanlin Wang, Yunqi Liu, Guang-Can Guo, Jiannian Yao, and Yong Sheng Zhao. "Organic printed photonics: From microring lasers to integrated circuits." Science Advances 1, no. 8 (September 2015): e1500257. http://dx.doi.org/10.1126/sciadv.1500257.
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A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.
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Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (August 1, 2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.
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AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.
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Larger, Laurent. "Complexity in electro-optic delay dynamics: modelling, design and applications." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 1999 (September 28, 2013): 20120464. http://dx.doi.org/10.1098/rsta.2012.0464.
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Nonlinear delay dynamics have found during the last 30 years a particularly prolific exploration area in the field of photonic systems. Besides the popular external cavity laser diode set-ups, we focus in this article on another experimental realization involving electro-optic (EO) feedback loops, with delay. This approach has strongly evolved with the important technological progress made on broadband photonic and optoelectronic devices dedicated to high-speed optical telecommunications. The complex dynamical systems performed by nonlinear delayed EO feedback loop architectures were designed and explored within a huge range of operating parameters. Thanks to the availability of high-performance photonic devices, these EO delay dynamics led also to many successful, efficient and diverse applications, beyond the many fundamental questions raised from the observation of experimental behaviours. Their chaotic motion allowed for a physical layer encryption method to secure optical data, with a demonstrated capability to operate at the typical speed of modern optical telecommunications. Microwave limit cycles generated in similar EO delay oscillators showed significantly improved spectral purity thanks to the use of a very long fibre delay line. Last but not least, a novel brain inspired computational principle has been recently implemented physically in photonics for the first time, again on the basis of an EO delay dynamical system. In this latter emerging application, the computed result is obtained by a proper ‘read-out’ of the complex nonlinear transients emerging from a fixed point, the transient being issued by the injection of the information signal to be processed.
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GHOSHAL, S. K., DEVENDRA MOHAN, TADESSE TENAW KASSA, and SUNITA SHARMA. "NANOSILICON FOR PHOTONIC APPLICATIONS." International Journal of Modern Physics B 21, no. 22 (September 10, 2007): 3783–96. http://dx.doi.org/10.1142/s0217979207037867.
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This presentation is a short review of some scientific insights on the possibilities of photonic applications of nanostructured silicon ( NS – Si ), porous Si ( p - Si ) and Si nanocrystals ( NC – Si ), one of the most interesting problems in nano-crystallite physics. The emission mechanism of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) are presently the main issue. The basic question lies in whether the emission is an extrinsic or intrinsic property of nanocrystals. It is important from a fundamental physics viewpoint because of the potential application of Si wires and quantum dots in optoelectronic devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such nanostructures. Future nano-technology would replace electrical with optical interconnects, which has appealing potential for higher-speed performance and immunity to signal cross talk.
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Almeida, Gustavo F. B., Sabrina N. C. Santos, Jonathas P. Siqueira, Jessica Dipold, Tobias Voss, and Cleber R. Mendonça. "Third-Order Nonlinear Spectrum of GaN under Femtosecond-Pulse Excitation from the Visible to the Near Infrared." Photonics 6, no. 2 (June 18, 2019): 69. http://dx.doi.org/10.3390/photonics6020069.
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Gallium nitride (GaN) has been established as a promising candidate for integrated electro-optic and photonic devices, aiming at applications from optical switching to signal processing. Studies of its optical nonlinearities, however, lack spectral coverage, especially in the telecommunications range. In this study, we measured the two-photon absorption coefficient (β) and the nonlinear index of refraction (n2) of GaN from the visible to the near-infrared by using femtosecond laser pulses. We observed an increase of β from (1.0 ± 0.2) to (2.9 ± 0.6) ×10−11 m/W as the photon energy approached the band gap from 1.77 up to 2.25 eV (700–550 nm), while n2 varied from (90 ± 30) ×10−20 up to (265 ± 80) ×10−20 m2/W within a broad spectral range, from 0.80 up to 2.25 eV (1550–550 nm). The results were modeled by applying a theory based on the second-order perturbation theory and the Kramers-Kronig relationship for direct-gap semiconductors, which are important for the development of GaN-based nonlinear photonic devices.
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Han, Changhao, Ming Jin, Yuansheng Tao, Bitao Shen, and Xingjun Wang. "Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators." Micromachines 13, no. 3 (February 28, 2022): 400. http://dx.doi.org/10.3390/mi13030400.
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As an important optoelectronic integration platform, silicon photonics has achieved significant progress in recent years, demonstrating the advantages on low power consumption, low cost, and complementary metal–oxide–semiconductor (CMOS) compatibility. Among the different silicon photonics devices, the silicon electro-optic modulator is a key active component to implement the conversion of electric signal to optical signal. However, conventional silicon Mach–Zehnder modulators and silicon micro-ring modulators both have their own limitations, which will limit their use in future systems. For example, the conventional silicon Mach–Zehnder modulators are hindered by large footprint, while the silicon micro-ring modulators have narrow optical bandwidth and high temperature sensitivity. Therefore, developing a new structure for silicon modulators to improve the performance is a crucial research direction in silicon photonics. Meanwhile, slow-light effect is an important physical phenomenon that can reduce the group velocity of light. Applying slow-light effect on silicon modulators through photonics crystal and waveguide grating structures is an attractive research point, especially in the aspect of reducing the device footprint. In this paper, we review the recent progress of silicon-based slow-light electro-optic modulators towards future communication requirements. Beginning from the principle of slow-light effect, we summarize the research of silicon photonic crystal modulators and silicon waveguide grating modulators in detail. Simultaneously, the experimental results of representative silicon slow-light modulators are compared and analyzed. Finally, we discuss the existing challenges and development directions of silicon-based slow-light electro-optic modulators for the practical applications.
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Ma, Zhizhen, Zhuoran Li, Ke Liu, Chenran Ye, and Volker J. Sorger. "Indium-Tin-Oxide for High-performance Electro-optic Modulation." Nanophotonics 4, no. 1 (June 30, 2015): 198–213. http://dx.doi.org/10.1515/nanoph-2015-0006.
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Abstract:Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffractionlimited devices.
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Zhixun, Liang, Xu Chuanpei, Bi Lvqing, Shi Yunying, Yi Yunfei, and Hu Cong. "Modeling and Performance Analysis of a Fault-Tolerant 3D Photonic Network-on-Chip Based on Hybrid Photonics–Plasmonics." Computational Intelligence and Neuroscience 2022 (July 19, 2022): 1–24. http://dx.doi.org/10.1155/2022/9615610.
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The performance of electro-optic modulators and optical routers and their routing algorithms are the key factors affecting the performance of networks on optical chips. This paper improves the mesh 3-dimensional photonic network-on-chip (3D-PNoC) topology. An SPP hybrid silicon-based electro-optic modulator and an improved fault-tolerant SPP router are used to improve the performance of the network on an optical chip. SPP switching and SPP MRR are combined to form a fault-tolerant SPP router. On this basis, an improved genetic optimization routing algorithm is implemented on the improved mesh 3D PNoC topology, which completes the data exchange of the IP core of the network on the optical chip. Compared with the case of traditional optoelectronic devices, the performance of on-chip optical networks can be improved effectively. The simulation results show that upon the application of the improved genetic optimization routing algorithm to the improved mesh 3D PNoC topology, the average end-to-end delay is reduced by 32.9%, the throughput rate is increased by 28.5%, and the system power consumption is reduced by 27.6%. On the other hand, the average insertion loss and noise of optical routers are increased by 2.94 dB and 2.95 dB, respectively.
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Yu, Su-Peng, Juan A. Muniz, Chen-Lung Hung, and H. J. Kimble. "Two-dimensional photonic crystals for engineering atom–light interactions." Proceedings of the National Academy of Sciences 116, no. 26 (June 12, 2019): 12743–51. http://dx.doi.org/10.1073/pnas.1822110116.
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We present a 2D photonic crystal system for interacting with cold cesium (Cs) atoms. The band structures of the 2D photonic crystals are predicted to produce unconventional atom–light interaction behaviors, including anisotropic emission, suppressed spontaneous decay, and photon-mediated atom–atom interactions controlled by the position of the atomic array relative to the photonic crystal. An optical conveyor technique is presented for continuously loading atoms into the desired trapping positions with optimal coupling to the photonic crystal. The device configuration also enables application of optical tweezers for controlled placement of atoms. Devices can be fabricated reliably from a 200-nm silicon nitride device layer using a lithography-based process, producing predicted optical properties in transmission and reflection measurements. These 2D photonic crystal devices can be readily deployed to experiments for many-body physics with neutral atoms and engineering of exotic quantum matter.
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Kazanskiy, Nikolai Lvovich, and Muhammad Ali Butt. "One-dimensional photonic crystal waveguide based on SOI platform for transverse magnetic polarization-maintaining devices." Photonics Letters of Poland 12, no. 3 (September 30, 2020): 85. http://dx.doi.org/10.4302/plp.v12i3.1044.
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In this letter, a TM-polarization C-band pass one-dimensional photonic crystal strip waveguide (1D-PCSW) is presented. The waveguide structure is based on a silicon-on-insulator platform which is easy to realize using standard CMOS technology. The numerical study is conducted via 3D-finite element method (FEM). The transmittance and polarization extinction ratio (PER) is enhanced by optimizing the geometric parameters of the device. As a result, a TM polarized light can travel in the waveguide with ~2 dB loss for all C-band telecommunication wavelength window whereas the TE polarized light suffers a high transmission loss of >30 dB. As a result, a PER of ~28.5 dB can be obtained for the whole C-band wavelengths range. The total length of the proposed device is around 8.4 µm long including 1 µm silicon strip waveguide segment on both ends. Based on our study presented in this paper, several photonic devices can be realized where strict polarization filtering is required. Full Text: PDF ReferencesB. Wang, S. Blaize, R.S-Montiel, "Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics", Nanoscale, 11, 20685 (2019). CrossRef D. Dai, J.E. Bowers, "Silicon-based on-chip multiplexing technologies and devices for Peta-bit optical interconnects", Nanophotonics, 3, 283 (2014). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Optical elements based on silicon photonics", Computer Optics, 43, 1079 (2019). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Compact design of a polarization beam splitter based on silicon-on-insulator platform", Laser Physics, 28, 116202 (2018). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "A T-shaped 1 × 8 balanced optical power splitter based on 90° bend asymmetric vertical slot waveguides", Laser Physics, 29, 046207 (2019). CrossRef Q. Wang, S.-T. Ho, "Ultracompact TM-Pass Silicon Nanophotonic Waveguide Polarizer and Design", IEEE Photonics J., 2, 49 (2010). CrossRef C.-H. Chen, L. Pang, C.-H. Tsai, U. Levy, Y. Fainman, "Compact and integrated TM-pass waveguide polarizer", Opt. Express, 13, 5347 (2005). CrossRef S. Yuan, Y. Wang, Q. Huang, J. Xia, J. Yu, "Ultracompact TM-pass/TE-reflected integrated polarizer based on a hybrid plasmonic waveguide for silicon photonics", in 11th International Conference on Group IV Photonics (GFP) (IEEE, 2014), pp. 183-184. CrossRef X. Guan, P. Chen, S. Chen, P. Xu, Y. Shi, D. Dai, "Low-loss ultracompact transverse-magnetic-pass polarizer with a silicon subwavelength grating waveguide", Opt. Lett., 39, 4514 (2014). CrossRef A.E.- S. Abd-Elkader, M.F. O. Hameed, N.F. Areed, H.E.-D. Mostafa, and S.S. Obayya, "Ultracompact AZO-based TE-pass and TM-pass hybrid plasmonic polarizers", J.Opt. Soc. Am. B., 36, 652 (2019). CrossRef J. Li et al., "Photonic Crystal Waveguide Electro-Optic Modulator With a Wide Bandwidth", Journal of Lightwave Technology, 31, 1601-1607 (2013). CrossRef N. Skivesen et al., "Photonic-crystal waveguide biosensor", Optics Express, 15, 3169-3176 (2007). CrossRef S. Lin, J. Hu, L. Kimerling, K. Crozier, "Design of nanoslotted photonic crystal waveguide cavities for single nanoparticle trapping and detection", Optics Letters, 34, 3451-3453 (2009). CrossRef T. Liu, A.R. Zakharian, M. Fallahi, J.V. Moloney, M. Mansuripur, "Design of a compact photonic-crystal-based polarizing beam splitter", IEEE Photonics Technology Letters, 17, 1435-1437 (2005). CrossRef R. K. Sinha, Y. Kalra, "Design of optical waveguide polarizer using photonic band gap", Optics Express, 14, 10790 (2006). CrossRef
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Notomi, Masaya, Takasumi Tanabe, Akihiko Shinya, Eiichi Kuramochi, and Hideaki Taniyama. "On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities." Advances in Optical Technologies 2008 (June 22, 2008): 1–10. http://dx.doi.org/10.1155/2008/568936.
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We review our recent studies on all-optical switching and memory operations based on thermo-optic and carrier-plasma nonlinearities both induced by two-photon absorption in silicon photonic crystal nanocavities. Owing to high-Q and small volume of these photonic crystal cavities, we have demonstrated that the switching power can be largely reduced. In addition, we demonstrate that the switching time is also reduced in nanocavity devices because of their short diffusion time. These features are important for all-optical nonlinear processing in silicon photonics technologies, since silicon is not an efficient optical nonlinear material. We discuss the effect of the carrier diffusion process in our devices, and demonstrate improvement in terms of the response speed by employing ion-implantation process. Finally, we show that coupled bistable devices lead to all-optical logic, such as flip-flop operation. These results indicate that a nanocavity-based photonic crystal platform on a silicon chip may be a promising candidate for future on-chip all-optical information processing in a largely integrated fashion.
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Jia, Baohua, Jiafang Li, and Min Gu. "Two-Photon Polymerization for Three-Dimensional Photonic Devices in Polymers and Nanocomposites." Australian Journal of Chemistry 60, no. 7 (2007): 484. http://dx.doi.org/10.1071/ch06484.
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Fabrication of micro- or nano-scale photonic devices in polymer materials to control and manipulate light propagation represents a hot topic nowadays. Compared with conventional semiconductor materials, polymers are easy to prepare and have the flexibility of incorporating active materials to realise various functionalities. As one of the most powerful tools in micro-optical fabrication, the two-photon polymerization technique has been widely employed recently to produce multifarious photonic devices, particularly the photonic crystals, which are promising candidates for integrated optical devices. In this article the recent advances in the fabrication of three-dimensional photonic devices such as diffractive optical elements, photonic crystals, and superprisms in polymer materials using the two-photon polymerization technique are reviewed. In particular, the fabrication of photonic crystals in nanocomposite polymers, which are formed by incorporating nanocrystal quantum dots into polymer materials, is demonstrated, providing an interesting physical platform for the investigation into new types of active micro-devices.
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Li, Chenlei, Dajian Liu, and Daoxin Dai. "Multimode silicon photonics." Nanophotonics 8, no. 2 (November 23, 2018): 227–47. http://dx.doi.org/10.1515/nanoph-2018-0161.
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AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.
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Park, Hyundai, Alexander W. Fang, Di Liang, Ying-Hao Kuo, Hsu-Hao Chang, Brian R. Koch, Hui-Wen Chen, Matthew N. Sysak, Richard Jones, and John E. Bowers. "Photonic Integration on the Hybrid Silicon Evanescent Device Platform." Advances in Optical Technologies 2008 (June 9, 2008): 1–17. http://dx.doi.org/10.1155/2008/682978.
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This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.
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Pond, James, Xu Wang, Zeqin Lu, Federico Duque Gomez, Ahsan Alam, Sebastian Gitt, Dylan McGuire, Jeff Young, and Gilles Lamant. "State-of-the-art and next-generation integrated photonic design." EPJ Web of Conferences 266 (2022): 01010. http://dx.doi.org/10.1051/epjconf/202226601010.
Full textAbstract:
The relentless need for higher bandwidth, lower power and lower cost data communications has driven tremendous innovation in integrated photonics in recent years. This innovation has been supported by state-of-the-art electronic-photonic design automation (EPDA) workflows, which enable process design kit (PDK) centred schematic driven design and layout, as well as statistically enabled electro-optical simulation. In addition, custom components can be introduced and optimized for a specific foundry process using advanced methods such as photonic inverse design and machine learning. While much of the innovation has been motivated by data communications, it has enabled a variety of different applications such as sensing, integrated LiDAR and quantum information technologies. We discuss the latest innovations in EPDA workflows and show how a silicon photonic ring-based wavelength demultiplexing (WDM) system can be easily designed, simulated and implemented. In addition, we discuss the extension of these workflows to support the design and simulation of quantum photonic devices, enabling designers to consider the effects of realistic sources and manufacturing imperfections when designing quantum building blocks to meet specific fidelity and fault tolerance thresholds.
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Luo, Kai-Hong, Sebastian Brauner, Christof Eigner, Polina R. Sharapova, Raimund Ricken, Torsten Meier, Harald Herrmann, and Christine Silberhorn. "Nonlinear integrated quantum electro-optic circuits." Science Advances 5, no. 1 (January 2019): eaat1451. http://dx.doi.org/10.1126/sciadv.aat1451.
Full textAbstract:
Future quantum computation and networks require scalable monolithic circuits, which incorporate various advanced functionalities on a single physical substrate. Although substantial progress for various applications has already been demonstrated on different platforms, the range of diversified manipulation of photonic states on demand on a single chip has remained limited, especially dynamic time management. Here, we demonstrate an electro-optic device, including photon pair generation, propagation, electro-optical path routing, as well as a voltage-controllable time delay of up to ~12 ps on a single Ti:LiNbO3waveguide chip. As an example, we demonstrate Hong-Ou-Mandel interference with a visibility of more than 93 ± 1.8%. Our chip not only enables the deliberate manipulation of photonic states by rotating the polarization but also provides precise time control. Our experiment reveals that we have full flexible control over single-qubit operations by harnessing the complete potential of fast on-chip electro-optic modulation.
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Meng, Qi, Xingqiao Chen, Wei Xu, Zhihong Zhu, Xiaodong Yuan, and Jianfa Zhang. "High Q Resonant Sb2S3-Lithium Niobate Metasurface for Active Nanophotonics." Nanomaterials 11, no. 9 (September 13, 2021): 2373. http://dx.doi.org/10.3390/nano11092373.
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Phase change materials (PCMs) are attracting more and more attentions as enabling materials for tunable nanophotonics. They can be processed into functional photonic devices through customized laser writing, providing great flexibility for fabrication and reconfiguration. Lithium Niobate (LN) has excellent nonlinear and electro-optical properties, but is difficult to process, which limits its application in nanophotonic devices. In this paper, we combine the emerging low-loss phase change material Sb2S3 with LN and propose a new type of high Q resonant metasurface. Simulation results show that the Sb2S3-LN metasurface has extremely narrow linewidth of 0.096 nm and high quality (Q) factor of 15,964. With LN as the waveguide layer, strong nonlinear properties are observed in the hybrid metasurface, which can be employed for optical switches and isolators. By adding a pair of Au electrodes on both sides of the LN, we can realize dynamic electro-optical control of the resonant metasurface. The ultra-low loss of Sb2S3, and its combination with LN, makes it possible to realize a new family of high Q resonant metasurfaces for actively tunable nanophotonic devices with widespread applications including optical switching, light modulation, dynamic beam steering, optical phased array and so on.
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Qi, Yifan, and Yang Li. "Integrated lithium niobate photonics." Nanophotonics 9, no. 6 (April 28, 2020): 1287–320. http://dx.doi.org/10.1515/nanoph-2020-0013.
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AbstractLithium niobate (LiNbO3) on insulator (LNOI) is a promising material platform for integrated photonics due to single crystal LiNbO3 film’s wide transparent window, high refractive index, and high second-order nonlinearity. Based on LNOI, the fast-developing ridge-waveguide fabrication techniques enabled various structures, devices, systems, and applications. We review the basic structures including waveguides, cavities, periodically poled LiNbO3, and couplers, along with their fabrication methods and optical properties. Treating those basic structures as building blocks, we review several integrated devices including electro-optic modulators, nonlinear optical devices, and optical frequency combs with each device’s operating mechanism, design principle and methodology, and performance metrics. Starting from these integrated devices, we review how integrated LNOI devices boost the performance of LiNbO3’s traditional applications in optical communications and data center, integrated microwave photonics, and quantum optics. Beyond those traditional applications, we also review integrated LNOI devices’ novel applications in metrology including ranging system and frequency comb spectroscopy. Finally, we envision integrated LNOI photonics’ potential in revolutionizing nonlinear and quantum optics, optical computing and signal processing, and devices in ultraviolet, visible, and mid-infrared regimes. Beyond this outlook, we discuss the challenges in integrated LNOI photonics and the potential solutions.
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Ji, Yanan, Wen Xu, Ilia L. Rasskazov, Haichun Liu, Junhua Hu, Mao Liu, Donglei Zhou, Xue Bai, Hans Ågren, and Hongwei Song. "Perovskite photonic crystal photoelectric devices." Applied Physics Reviews 9, no. 4 (December 2022): 041319. http://dx.doi.org/10.1063/5.0106118.
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Metal halide perovskite materials have been extensively explored in modern photonic devices. Photonic crystals (PCs) are periodic structures with specific optical properties, such as photonic stop bands and “slow photon” effects, which can tailor the propagation and distribution of photons in photoelectric devices. PCs have in recent years been widely explored to significantly improve the performance of perovskite luminescent materials and/or photoelectric devices. Therefore, a full understanding of the key role of PCs and a further learning of the correct use of PCs in perovskite photonic/photoelectric devices are essential for realizing the inherent potential of the superior performance of such devices. By means of this first review, we aim at offering a comprehensive framework description for PCs suitable for high-performance perovskite photoelectric devices. We start with a brief introduction to the basic aspects of PCs. Then, we summarize the influences of PCs on emission/absorption for perovskite luminescent materials. Subsequently, we systematically discuss concepts like light extraction, light trapping, slow-light effects, and structural effects of PCs for perovskite devices, with a particular emphasis on their theoretical descriptions. We argue that the marriage of perovskite materials with PCs can open up a novel frontier in photoelectric devices that potentially can spawn many exciting new fields.
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Fitzgerald, Thomas M., and Michael A. Marciniak. "Full Optical Scatter Analysis for Novel Photonic and Infrared Metamaterials." Advances in Science and Technology 75 (October 2010): 240–45. http://dx.doi.org/10.4028/www.scientific.net/ast.75.240.
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Artificial structures with sub-optical wavelength features are engineered to feature non-conventional values for material properties such as optical and infrared permeability and permittivity. Such artificial structures are referred to as optical and infrared metamaterials.[1] The application space of electromagnetic metamaterials includes novel sub-wavelength waveguides and antennas, true time delay devices, optical filters, and plasmonic electronic-optical interfaces.[2] In this paper presents an optical diagnostic technique adapted for measuring and analyzing bidirectional polarimetric scatter from novel photonic and infrared metamaterials of interest. This optical diagnostic technique is also broadly applicable to other optical/infrared metamaterial structures that are proposed or developed in the future. The specific project goals are a) Demonstrate a novel metamaterial characterization full-polarimetric diffuse ellipsometry technique suitable to measure desired material properties with stated uncertainty limits for novel photonic and infrared metamaterials of interest. b) Demonstrate incorporation of predictive computational codes that estimate the electro-magnetic property values for metamaterial designs and concepts of interest.
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Osawa, Shuto, David S. Simon, and Alexander V. Sergienko. "Directionally-Unbiased Unitary Optical Devices in Discrete-Time Quantum Walks." Entropy 21, no. 9 (August 31, 2019): 853. http://dx.doi.org/10.3390/e21090853.
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The optical beam splitter is a widely-used device in photonics-based quantum information processing. Specifically, linear optical networks demand large numbers of beam splitters for unitary matrix realization. This requirement comes from the beam splitter property that a photon cannot go back out of the input ports, which we call “directionally-biased”. Because of this property, higher dimensional information processing tasks suffer from rapid device resource growth when beam splitters are used in a feed-forward manner. Directionally-unbiased linear-optical devices have been introduced recently to eliminate the directional bias, greatly reducing the numbers of required beam splitters when implementing complicated tasks. Analysis of some originally directional optical devices and basic principles of their conversion into directionally-unbiased systems form the base of this paper. Photonic quantum walk implementations are investigated as a main application of the use of directionally-unbiased systems. Several quantum walk procedures executed on graph networks constructed using directionally-unbiased nodes are discussed. A significant savings in hardware and other required resources when compared with traditional directionally-biased beam-splitter-based optical networks is demonstrated.
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Yu, Paul K. L., Edward T. Yu, and De Li Wang. "Advances in Semiconductor Nanostructures for Photonic Applications." Advanced Materials Research 410 (November 2011): 36. http://dx.doi.org/10.4028/www.scientific.net/amr.410.36.
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In this paper we present the concept and demonstration of novel photovoltaic and electro-optic devices, and photoelectrochemical cells based on various semiconductor nanostructures, specifically compound semiconductor quantum wells and nanowires, and the use of plasmonic and related scattering effects from metal or dielectric nanoparticles to increase efficiency of optical absorption. Quantum-well solar cells were fabricated with scattering from metallic or dielectric nanostructures incorporated to direct incident photons into lateral, optically confined paths with high electromagnetic field intensity within relatively thin multiple-quantum-well regions to maximize quantum efficiency of photon absorption. The internal structure of quantum wells in quantum-well solar cells was also analyzed and characterized; the incorporation of a suitable potential step within each quantum well was explored for improvement in power conversion efficiency. Vertical nanowire arrays were engineered to optimize optical confinement within the nanowires, and core-shell heterostructures were employed to achieve broad-spectrum absorption while maintaining high open-circuit voltages. Large linear electro-optic effect is observed in the nanowire arrays. Branched nanowire photoelectrochemical cells were also made and characterized for their spectral incident photon-to-current conversion efficiency. These works have been sponsored by U.S. Department of Energy and National Science Foundation.
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Golovastikov, N. V., S. P. Dorozhkin, and V. A. Soife. "Intelligent systems based on photonics." Ontology of Designing 11, no. 4 (December 31, 2021): 422–36. http://dx.doi.org/10.18287/2223-9537-2021-11-4-422-436.
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This paper discusses the prospects of photonics, shows the relevance and applicability of photonics research. The poten-tial of photonics technologies to answer the socio-economic challenges of the digital transformation age is revealed. Opportunities that emerge with the introduction of photonic devices to various technical systems designed for environ-mental protection and quality of life improvement are demonstrated. Concrete photonics structures and devices for such key applications as spectroscopy, analog optical calculations, and optical neural networks are closely examined. Possi-ble applications for photonic sensors and new type spectrometers are outlined, their competitive advantages explored. Various geometries of extra fine compact photonic spectrometers are presented: based on digital planar diagrams, inte-grated into the photonic waveguides, metasurfaces, diffraction gratings with varying parameters. The benefits of analog optical computations against conventional electronic devices are discussed. Various nanophotonic structures designed for differential and integral operators are studied, solutions for edge detection are proposed. The concept for artificial intelligence implementation on the photonics platform using optical neural networks is analyzed. Various solutions are examined: containing sequences of diffraction elements and based on Huygens–Fresnel principle, as well as planar structures comprised of waveguides that interact as Mach–Zehnder interferometer. SPIE estimation of the international photonics market proposes that the peak of interest for this field is yet to be achieved and photonics will claim its place in the future technological landscape.
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Zhu, Minmin, Zehui Du, Soon Siang Chng, Siu Hon Tsang, and Edwin Hang Tong Teo. "Strong electro-optically active Ni-substituted Pb(Zr0.35Ti0.65)O3 thin films: toward integrated active and durable photonic devices." Journal of Materials Chemistry C 6, no. 47 (2018): 12919–27. http://dx.doi.org/10.1039/c8tc04576c.
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Ferroelectric materials for precise control of light from lasers to optical communications have sparked great interest owing to their large electro-optic (EO) coefficients, low propagation loss, and fast switching time.
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Oulachgar, Hassane, Martin Bolduc, Gregory Chauve, Yan Desroches, Patrick Beaupre, Jean Bouchard, and Pierre Galarneau. "Fabrication and Electro-Optical Characterization of a Nanocellulose-Based Spatial Light Modulator." MRS Advances 1, no. 10 (December 28, 2015): 631–37. http://dx.doi.org/10.1557/adv.2015.34.
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ABSTRACTNanocrystalline cellulose (NCC) is an emerging renewable nanomaterial that is promising for many diverse applications. As a renewable material, NCC and its derivatives have been widely studied, focusing on their biological, chemical, as well as mechanical properties. The electro-optical properties of NCC, however, remain relatively under explored. Birefringence is one of the important properties that make the NCC very attractive for photonic applications. The rode-like NCC fibers dispersed in certain solutions exhibit a specific preferred orientation which depends on their electrical charge, physical dimensions and the type of solutions used to disperse NCC fibers. In a recent study of Kerr-effect in functionalized NCC solutions, we demonstrated that it is possible to control the orientation of NCC fibers under an applied electric field. NCC-based spatial light modulator devices were fabricated and characterized. Results showed that the transmittance of the device can be controlled through frequency modulation of the applied electric field. In this paper we present the fabrication and electro-optical characterization of the device and discuss the relevant properties of NCC and future approaches to optimize and improve their characteristics and performance.
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Sorger, Volker J., Norberto D. Lanzillotti-Kimura, Ren-Min Ma, and Xiang Zhang. "Ultra-compact silicon nanophotonic modulator with broadband response." Nanophotonics 1, no. 1 (July 1, 2012): 17–22. http://dx.doi.org/10.1515/nanoph-2012-0009.
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AbstractElectro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.
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Liñares, Jesús, Xesús Prieto-Blanco, Gabriel M. Carral, and María C. Nistal. "Quantum Photonic Simulation of Spin-Magnetic Field Coupling and Atom-Optical Field Interaction." Applied Sciences 10, no. 24 (December 10, 2020): 8850. http://dx.doi.org/10.3390/app10248850.
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In this work, we present the physical simulation of the dynamical and topological properties of atom-field quantum interacting systems by means of integrated quantum photonic devices. In particular, we simulate mechanical systems used, for example, for quantum processing and requiring a very complex technology such as a spin-1/2 particle interacting with an external classical time-dependent magnetic field and a two-level atom under the action of an external classical time-dependent electric (optical) field (light-matter interaction). The photonic device consists of integrated optical waveguides supporting two collinear or codirectional modes, which are coupled by integrated optical gratings. We show that the single-photon quantum description of the dynamics of this photonic device is a quantum physical simulation of both aforementioned interacting systems. The two-mode photonic device with a single-photon quantum state represents the quantum system, and the optical grating corresponds to an external field. Likewise, we also present the generation of Aharonov–Anandan geometric phases within this photonic device, which also appear in the simulated systems. On the other hand, this photonic simulator can be regarded as a basic brick for constructing more complex photonic simulators. We present a few examples where optical gratings interacting with several collinear and/or codirectional modes are used in order to illustrate the new possibilities for quantum simulation.
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Woliński, Tomasz, Sławomir Ertman, Katarzyna Rutkowska, Daniel Budaszewski, Marzena Sala-Tefelska, Miłosz Chychłowski, Kamil Orzechowski, Karolina Bednarska, and Piotr Lesiak. "Photonic Liquid Crystal Fibers – 15 years of research activities at Warsaw University of Technology." Photonics Letters of Poland 11, no. 2 (July 1, 2019): 22. http://dx.doi.org/10.4302/plp.v11i2.907.
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Research activities in the area of photonic liquid crystal fibers carried out over the last 15 years at Warsaw University of Technology (WUT) have been reviewed and current research directions that include metallic nanoparticles doping to enhance electro-optical properties of the photonic liquid crystal fibers are presented. Full Text: PDF ReferencesT.R. Woliński et al., "Propagation effects in a photonic crystal fiber filled with a low-birefringence liquid crystal", Proc. SPIE, 5518, 232-237 (2004). CrossRef F. Du, Y-Q. Lu, S.-T. Wu, "Electrically tunable liquid-crystal photonic crystal fiber", Appl. Phys. Lett. 85, 2181-2183 (2004). CrossRef T.T. Larsen, A. Bjraklev, D.S. Hermann, J. Broeng, "Optical devices based on liquid crystal photonic bandgap fibres", Opt. Express, 11, 20, 2589-2596 (2003). CrossRef T.R. Woliński et al., "Tunable properties of light propagation in photonic liquid crystal fibers", Opto-Electron. Rev. 13, 2, 59-64 (2005). CrossRef M. Chychłowski, S. Ertman, T.R. Woliński, "Splay orientation in a capillary", Phot. Lett. Pol. 2, 1, 31-33 (2010). CrossRef T.R. Woliński et al., "Photonic liquid crystal fibers — a new challenge for fiber optics and liquid crystals photonics", Opto-Electron. Rev. 14, 4, 329-334 (2006). CrossRef T.R. Woliński et al., "Influence of temperature and electrical fields on propagation properties of photonic liquid-crystal fibres", Meas. Sci. Technol. 17, 985-991 (2006). CrossRef T.R. Woliński et al., "Photonic Liquid Crystal Fibers for Sensing Applications", IEEE Trans. Inst. Meas. 57, 8, 1796-1802 (2008). CrossRef T.R. Woliński, et al., "Multi-Parameter Sensing Based on Photonic Liquid Crystal Fibers", Mol. Cryst. Liq. Cryst. 502: 220-234., (2009). CrossRef T.R. Woliński, Xiao G and Bock WJ Photonics sensing: principle and applications for safety and security monitoring, (New Jersey, Wiley, 147-181, 2012). CrossRef T.R. Woliński et al., "Propagation effects in a polymer-based photonic liquid crystal fiber", Appl. Phys. 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Du, Qingyang. "High energy radiation damage on silicon photonic devices: a review." Optical Materials Express 13, no. 2 (January 5, 2023): 403. http://dx.doi.org/10.1364/ome.476935.
Full textAbstract:
The past decade has witnessed the fast development of silicon photonics. Their superior performance compared with the electronic counterpart has made the silicon photonic device an excellent candidate for data communication, sensing, and computation. Most recently, there has been growing interest in implementing these devices in radiation harsh environments, such as nuclear reactors and outer space, where significant doses of high energy irradiation are present. Therefore, it is of paramount importance to fill in the “knowledge gap” of radiation induced damage in silicon photonic devices and provide mitigation solutions to fulfill the device endurance requirement. In this review, we introduce the damage mechanism and provide a survey on radiation induced effects on silicon photonic devices, including lasers, modulators, detectors, and passive waveguides. Finally, the mitigation strategies are discussed.
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SONG, BONG-SHIK, TAKASHI ASANO, and SUSUMU NODA. "RECENT ADVANCES IN TWO-DIMENSIONAL PHOTONIC CRYSTALS SLAB STRUCTURE: DEFECT ENGINEERING AND HETEROSTRUCTURE." Nano 02, no. 01 (February 2007): 1–13. http://dx.doi.org/10.1142/s1793292007000374.
Full textAbstract:
This paper presents a review on the selected highlights of highly-functional devices in two-dimensional photonic crystals slab structure. By introducing artificial defects in the photonic crystals (that is, defect engineering), novel photonic devices of line-defect waveguides and point-defect nanocavity are demonstrated. For more efficient manipulation of photons, the fundamentals of heterostructure photonic crystals are also reviewed. Heterostructures consist of multiple photonic crystals with different lattice-constants and they provide further high-functionalities such as multiple wavelength operation while maintaining optimized performance and the enhancement of photon manipulation efficiency. Because of the importance of high quality (Q) nanocavity for realization of nanophotonic devices, we also review the design rule of high Q nanocavities and present recent experiments on nanocavities with Q factors in excess of one million (~ 1.2 × 106). The progress of defect engineering and heterostructure in two-dimensional photonic crystals slab structure will accelerate development in ultrasmall photonic chips, cavity quantum electrodynamics, optical sensors, etc.
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Liu, Meng, Zhi-Wei Wei, Ai-Ping Luo, Wen-Cheng Xu, and Zhi-Chao Luo. "Recent progress on applications of 2D material-decorated microfiber photonic devices in pulse shaping and all-optical signal processing." Nanophotonics 9, no. 9 (July 8, 2020): 2641–71. http://dx.doi.org/10.1515/nanoph-2019-0564.
Full textAbstract:
AbstractDue to the exotic electronic and optical properties, two-dimensional (2D) materials, such as graphene, topological insulators, transition metal dichalcogenides, black phosphorus, MXenes, graphitic carbon nitride, metal-organic frameworks, and so on, have attracted enormous interest in the scientific communities dealing with electronics and photonics. Combing the 2D materials with the microfiber, the 2D material-decorated microfiber photonic devices could be assembled. They offer the advantages of a high nonlinear effect, all fiber structure, high damage threshold, and so on, which play important roles in fields of pulse shaping and all-optical signal processing. In this review, first, we introduce the fabrication methods of 2D material-decorated microfiber photonic devices. Then the pulse generation and the nonlinear soliton dynamics based on pulse shaping method in fiber lasers and all-optical signal processing based on 2D material-decorated microfiber photonic devices, such as optical modulator and wavelength converter, are summarized, respectively. Finally, the challenges and opportunities in the future development of 2D material-decorated microfiber photonic devices are given. It is believed that 2D material-decorated microfiber photonic devices will develop rapidly and open new opportunities in the related fields.
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Chen, Changming, Junyu Li, Chunxue Wang, Yingyan Huang, Daming Zhang, Zuosen Shi, Zhanchen Cui, Fei Yi, and Seng-Tiong Ho. "Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon." Photonics 8, no. 10 (October 9, 2021): 433. http://dx.doi.org/10.3390/photonics8100433.
Full textAbstract:
In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.
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Merabti, Abdelhak, Abdelkader Bensliman, and Mahmoud Habab. "Electro-Optical Simulation Of In Ultra-Thin Photonic Crystal Amorphous Silicon Solar Cells." American International Journal of Multidisciplinary Scientific Research 5, no. 2 (June 10, 2019): 10–21. http://dx.doi.org/10.46281/aijmsr.v5i2.310.
Full textAbstract:
Hydrogenated amorphous Si (a-Si:H) is an important solar cell material. The critical problem in the a-Si:H-based photovoltaic cell is increasing the conversion efficiency. To overcome the difficulty, higher conversion efficiency demands a longer optical path to increase optical absorption. Thus, a light trapping structure is needed to obtain more efficient absorption. In this context, we propose a complete solar cell structure for which a 1D grating is etched into the ultrathin active absorbing layer of a one-dimensional "CP 1D" photonic crystal a-Si: H characterized by the optimal parameters: period a = 480 nm, a filling factor ff = 50% and a depth d = 150 nm. This was selected by varying the CP1D parameters to maximize the absorption integrated into the active layer. CP1D is suggested as an intermediate layer in the solar cell concentration system. This study allowed us to model the optical and electrical behavior of a CP1D solar cell. After optimization of the geometrical parameters (period and fill factor ... etc.), we concluded that the CP1D led to greater optical gains than for their unstructured equivalent. The simulation clearly illustrates that the electric field strongly affects the electro-optical characteristics of the devices studied, and that it is clear that 1D PC solar cells as active layer have exhibited a high electric field distribution. We have focused on the net on the effect of the active layer and its beneficial role in the sense of expressing the photovoltaic performance of the devices.
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Chigrinov, Vladimir, Jiatong Sun, and Xiaoqian Wang. "Photoaligning and Photopatterning: New LC Technology." Crystals 10, no. 4 (April 20, 2020): 323. http://dx.doi.org/10.3390/cryst10040323.
Full textAbstract:
We demonstrate a physical model of photoalignment and photopatterning based on rotational diffusion in solid azo-dye nanolayers. We also highlight the new applications of photoalignment and photopatterning in display and photonics such as: (i) liquid crystal (LC) E-paper devices, including optically rewritable LC E-paper on flexible substrates as 3D E-paper, as well as optically rewritable technology for photonics devices; (ii) photonics LC devices, such as LC Switches, polarization controllers and polarization rotators, variable optical attenuators, LC filled photonic crystal fiber, switchable diffraction grating; (iii) patterned micro-polarizer array using photo-alignment technology for image sensor; (iv) electrically tunable liquid crystal q-plates; (v) electrically switchable liquid crystal Fresnel lens; (vi) liquid crystal optical elements with integrated Pancharatnam-Berry phases. We are sure, that in the field of (LC), the main point is no longer display research, but new photonic applications of LC are emerging in telecommunication, fiber optical communication systems, sensors, switchable lenses, LC light converters and other LC photonics devices.