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Journal articles on the topic 'Photoluminescence Excitation Spectroscopy'

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Author: Grafiati

Published: 10 December 2022

Last updated: 25 May 2024

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1

Olsthoorn, S. M., F. A. J. M. Driessen, A. P. A. M. Eijkelenboom, and L. J. Giling. "Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As." Journal of Applied Physics 73, no. 11 (June 1993): 7798–803. http://dx.doi.org/10.1063/1.353953.

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2

White, M. E., K. P. O'Donnell, R. W. Martin, S. Pereira, C. J. Deatcher, and I. M. Watson. "Photoluminescence excitation spectroscopy of InGaN epilayers." Materials Science and Engineering: B 93, no. 1-3 (May 2002): 147–49. http://dx.doi.org/10.1016/s0921-5107(02)00025-9.

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3

Sinha, S., S. Banerjee, and B. M. Arora. "Photoluminescence-excitation spectroscopy of porous silicon." Physical Review B 49, no. 8 (February 15, 1994): 5706–9. http://dx.doi.org/10.1103/physrevb.49.5706.

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4

Steele, A. G., and Edward C. Lightowlers. "Photoluminescence Excitation Spectroscopy of Donors in Ge." Materials Science Forum 65-66 (January 1991): 217–22. http://dx.doi.org/10.4028/www.scientific.net/msf.65-66.217.

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5

Horner, G. S., A. Mascarenhas, S. Froyen, R. G. Alonso, K. Bertness, and J. M. Olson. "Photoluminescence-excitation-spectroscopy studies in spontaneously orderedGaInP2." Physical Review B 47, no. 7 (February 15, 1993): 4041–43. http://dx.doi.org/10.1103/physrevb.47.4041.

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6

Roura, P., G. Guillot, T. Benyattou, and W. Ulrici. "Photoluminescence excitation spectroscopy of Ti3+in GaP." Semiconductor Science and Technology 6, no. 1 (January 1, 1991): 36–40. http://dx.doi.org/10.1088/0268-1242/6/1/007.

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7

Ristein, J., B. Hooper, S. Gu, and P. C. Taylor. "Excitation spectroscopy of photoluminescence in a-Si:H." Solar Cells 27, no. 1-4 (October 1989): 403–9. http://dx.doi.org/10.1016/0379-6787(89)90049-5.

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8

Siebentritt, Susanne, Niklas Papathanasiou, and Martha Lux-Steiner. "Photoluminescence excitation spectroscopy of highly compensated CuGaSe2." physica status solidi (b) 242, no. 13 (November 2005): 2627–32. http://dx.doi.org/10.1002/pssb.200541130.

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9

Gupta, Santosh K., Hisham Abdou, Carlo U. Segre, and Yuanbing Mao. "Excitation-Dependent Photoluminescence of BaZrO3:Eu3+ Crystals." Nanomaterials 12, no. 17 (August 31, 2022): 3028. http://dx.doi.org/10.3390/nano12173028.

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The elucidation of local structure, excitation-dependent spectroscopy, and defect engineering in lanthanide ion-doped phosphors was a focal point of research. In this work, we have studied Eu3+-doped BaZrO3 (BZOE) submicron crystals that were synthesized by a molten salt method. The BZOE crystals show orange–red emission tunability under the host and dopant excitations at 279 nm and 395 nm, respectively, and the difference is determined in terms of the asymmetry ratio, Stark splitting, and intensity of the uncommon 5D0 → 7F0 transition. These distinct spectral features remain unaltered under different excitations for the BZOE crystals with Eu3+ concentrations of 0–10.0%. The 2.0% Eu3+-doped BZOE crystals display the best optical performance in terms of excitation/emission intensity, lifetime, and quantum yield. The X-ray absorption near the edge structure spectral data suggest europium, barium, and zirconium ions to be stabilized in +3, +2, and +4 oxidation states, respectively. The extended X-ray absorption fine structure spectral analysis confirms that, below 2.0% doping, the Eu3+ ions occupy the six-coordinated Zr4+ sites. This work gives complete information about the BZOE phosphor in terms of the dopant oxidation state, the local structure, the excitation-dependent photoluminescence (PL), the concentration-dependent PL, and the origin of PL. Such a complete photophysical analysis opens up a new pathway in perovskite research in the area of phosphors and scintillators with tunable properties.

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10

Reuter, E. E., R. Zhang, T. F. Kuech, and S. G. Bishop. "Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 363–68. http://dx.doi.org/10.1557/s1092578300002738.

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We have done a comparative study of carbon-doped GaN and undoped GaN utilizing photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies in order to investigate deep levels involved in yellow luminescence (YL) and red luminescence (RL). When the GaN was excited by above-bandgap light, red luminescence (RL) centered at 1.82 eV was the dominant below-gap PL from undoped GaN, but carbon-doped GaN below-gap PL was dominated by yellow luminescence (YL) centered at 2.2 eV. When exciting PL below the band-gap with 2.4 eV light, undoped GaN had a RL peak centered at 1.5 eV and carbon-doped GaN had a RL peak centered at 1.65 eV. PLE spectra of carbon-doped GaN, detecting at 1.56 eV, exhibited a strong, broad excitation band extending from about 2.1 to 2.8 eV with an unusual shape that may be due to two or more overlapping excitation bands. This RL PLE band was not observed in undoped GaN. We also demonstrate that PL spectra excited by below gap light in GaN films on sapphire substrates are readily contaminated by 1.6−1.8 eV and 2.1−2.5 eV chromium-related emission from the substrate. A complete characterization of the Cr emission and excitation bands for sapphire substrates enables the determination of the excitation and detection wavelengths required to obtain GaN PL and PLE spectra that are free of contributions from substrate emission.

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11

PLENTZ, FLÁVIO, HENRIQUE B. RIBEIRO, ADO JORIO, MARCOS A. PIMENTA, C. FANTINI, V. S. T. PERESSINOTTO, C. A. FURTADO, and A. P. SANTOS. "PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF SEMICONDUCTING SINGLE WALL CARBON NANOTUBES." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2676–77. http://dx.doi.org/10.1142/s0217979209062165.

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Since the discovery of single wall carbon nanotubes (SWNT) in 1991, this nanomaterial has received an enormous attention from the nanoscience and nanotechnology community, not only due to the clear prospects for applications such as novel nanoelectronic and nano-optoelectronic devices, but also because this unique one dimensional (1D) system offered a new possibility for the investigation of novel physical phenomena in low dimensions. In 2002 it was demonstrated that photoluminescence (PL) could be observed in suspensions of isolated SWNTs and, later on, that PL could also be observed from individual, suspended SWNTs. Since then, there has been an increasing amount of work directed towards the investigation of the optical properties of semiconducting SWNTs by PL and photoluminescence excitation spectroscopy (PLE), and the use of PL and PLE for the qualitative and quantitative identification of SWNTs species within and ensemble of carbon nanotubes. In 2005 it was shown that the observed optical transitions are associated to 1D excitons and, from the point of view of optical properties, the rich physics of excitons in SWNTs has received much attention. For instance, it is now clear that excitons and exciton-phonon interactions play a major role in the mechanisms responsible for the emission and the absorption of light in SWNTs. Also, the interaction of SWNTs with their vicinity, which includes the interaction with organic and inorganic molecules, and the modifications in the excitonic system caused by changes in the dielectric constant, can be readily investigated by PL and PLE. In this talk we presented an overview of our recent work in the optical spectroscopy of SWNTs.1–3 In particular, we showed some of our results on the investigation of the exciton-phonon interaction in semiconducting SWNTs and on the modifications in the PL and PLE spectra associated to the interactions with its surrounding environment. Note from Publisher: This article contains the abstract only.

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12

Podemski, Paweł, Mark Holmes, Satoshi Kako, Munetaka Arita, and Yasuhiko Arakawa. "Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots." Applied Physics Express 6, no. 1 (January 1, 2013): 012102. http://dx.doi.org/10.7567/apex.6.012102.

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13

Stutzmann, M., M. S. Brandt, M. Rosenbauer, J. Weber, and H. D. Fuchs. "Photoluminescence excitation spectroscopy of porous silicon and siloxene." Physical Review B 47, no. 8 (February 15, 1993): 4806–9. http://dx.doi.org/10.1103/physrevb.47.4806.

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14

Chang, Sung-Sik. "Photoluminescence excitation spectroscopy obtained for spark-processed Si." Applied Surface Science 191, no. 1-4 (May 2002): 5–10. http://dx.doi.org/10.1016/s0169-4332(01)01036-4.

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15

Burnett, J. H., H. M. Cheong, W. Paul, P. F. Hopkins, A. J. Rimberg, R. M. Westervelt, M. Sundaram, and A. C. Gossard. "Photoluminescence excitation spectroscopy of wide parabolic quantum wells." Superlattices and Microstructures 10, no. 2 (January 1991): 167–70. http://dx.doi.org/10.1016/0749-6036(91)90223-e.

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16

Rodrigues, P. A. M., G. Tamulaitis, Peter Y. Yu, and Subhash H. Risbud. "Size selective photoluminescence excitation spectroscopy in CdSe nanocrystals." Solid State Communications 94, no. 8 (May 1995): 583–87. http://dx.doi.org/10.1016/0038-1098(95)00135-2.

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17

Hannewald, Karsten, Stephan Glutsch, and Friedhelm Bechstedt. "Nonequilibrium theory of photoluminescence excitation spectroscopy in semiconductors." physica status solidi (b) 238, no. 3 (August 2003): 517–20. http://dx.doi.org/10.1002/pssb.200303178.

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18

Shkerin S. N., Ulyanova E. S., and Vovkotrub E. G. "Photoluminescence of ytterbium doped zirconia." Physics of the Solid State 64, no. 4 (2022): 451. http://dx.doi.org/10.21883/pss.2022.04.53502.252.

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Raman spectra were studied for the cubic ytterbium doped zirconia with 10, 20 and 25% of dopant. This part of investigation deals with region of large wave numbers. Two different excitation sources with wavelength 785 and 532 nm are used. For first time Stokes lines that are independent of the excitation wavelength were observed together with conventional luminescence of ytterbium cation. Keywords: Zr(Yb)O2, Raman spectroscopy, photoluminescence, the crystal defects association.

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19

Panchenko, Valentina N., Anton I. Kostyukov, Anton Yu Shabalin, Evgeniy A. Paukshtis, Tatiana S. Glazneva, and Sergei G. Kazarian. "New Insight into Titanium–Magnesium Ziegler–Natta Catalysts Using Photoluminescence Spectroscopy." Applied Spectroscopy 74, no. 10 (June 18, 2020): 1209–18. http://dx.doi.org/10.1177/0003702820927434.

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This paper presents the results of study of titanium–magnesium catalysts often used in polymerization processes, by photoluminescence spectroscopy (PL) in combination with diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS). The interaction of dibutyl phthalate (DBP) with MgCl2 was studied at DBPadded/Mg = 0–1 (mol/mol). The luminescence spectra with excitation at 278 nm and the excitation spectra for main emission bands were recorded. It was shown that DBP adsorbed on magnesium chloride, both in the form of donor–acceptor complexes (D+A–) and in the form of molecular complexes. At DBPadded/Mg <0.15, the formation of D+A– complexes occur predominantly; with an increase in DBPadded/Mg, the fraction of molecular complexes increases. Molecular complexes are destroyed during the treatment of the support by TiCl4. In this case, the structure of magnesium chloride is disordered and new coordination–unsaturated sites are formed. This work is a first attempt to apply PL spectroscopy in combination with DRIFTS spectroscopy to study titanium–magnesium Ziegler–Natta catalysts. The application of PL spectroscopy to such systems made it possible to detect interactions within and between donor molecules, which would be particularly challenging to achieve using other spectroscopic methods. Both spectroscopic methods provided crucial information about the existence of two types of complexes on the sample surface which is important for tuning the synthesis procedure of the titanium–magnesium catalysts for olefin polymerization.

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20

Lu, Shaozhe, Jiahua Zhang, Jishen Zhang, E. Shulin, Haifeng Zhao, and Yongshi Luo. "Laser Spectroscopy of GdPO4 · nH2O:Eu Nanomaterials." Journal of Nanoscience and Nanotechnology 16, no. 4 (April 1, 2016): 3613–16. http://dx.doi.org/10.1166/jnn.2016.11835.

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One-dimensional GdPO4 · nH2O:Eu nanowires and nanorods of different sizes and the same structure were synthesized by hydrothermal method. Nanowire and nanorods had width and length of about 10 nm/50 nm and 80 nm/1 μm, respectively. Adjusting reaction system PH value by adding alkali metal NaOH, the size and shape of the product can be tuned. The high resolution spectra, excitation spectra, and laser selective excitation spectra at low temperature were determined. Nanorod compared with nanowire, photoluminescence was enhanced, and the excitation spectrum and laser selective excitation spectra were broadened. These results suggest that Eu3+ in GdPO4 · nH2O nanorod and nanowire were located in different local environments.

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21

DeLong, M. C., D. J. Mowbray, R. A. Hogg, M. S. Skolnick, M. Hopkinson, J. P. R. David, P. C. Taylor, Sarah R. Kurtz, and J. M. Olson. "Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P." Journal of Applied Physics 73, no. 10 (May 15, 1993): 5163–72. http://dx.doi.org/10.1063/1.353792.

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22

Kim, S., S. J. Rhee, X. Li, J. J. Coleman, and S. G. Bishop. "Photoluminescence and photoluminescence excitation spectroscopy of multipleNd3+sites in Nd-implanted GaN." Physical Review B 57, no. 23 (June 15, 1998): 14588–91. http://dx.doi.org/10.1103/physrevb.57.14588.

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23

Chima, Hiromichi, Naoyuki Shiokawa, Keisuke Seto, Kohsei Takahashi, Naoto Hirosaki, Takayoshi Kobayashi, and Eiji Tokunaga. "Thermal Relaxation Spectra for Evaluating Luminescence Quantum Efficiency of CASN:Eu2+ Measured by Balanced-Detection Sagnac-Interferometer Photothermal Deflection Spectroscopy." Applied Sciences 10, no. 3 (February 4, 2020): 1008. http://dx.doi.org/10.3390/app10031008.

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Highly sensitive broadband photothermal spectroscopy with a white-light lamp as the excitation source was developed by combining a Sagnac interferometer and balanced detection with a photothermal deflection method. A probe beam was split by a birefringent crystal CaCO3 into signal and reference beams with a balanced intensity. This balanced detection enabled the measurement of photoexcited thermal relaxation spectra of materials in the air over the whole visible range in the weak excitation limit 50 µW/cm2. The photothermal excitation spectrum of Eu2+-doped CaAlSiN3 phosphors (CASN:Eu2+) with a high luminescent quantum efficiency was measured to be distinctly different from the photoluminescence excitation spectrum which reflects the absorption spectrum, revealing the thermal relaxation mechanism of the phosphor. Assuming a typical non-radiative relaxation from the higher excited states to the lowest excited state and successively to the ground state, it is demonstrated that the photoluminescence efficiency of the phosphors is readily evaluated simply by comparing the photothermal and photoluminescence excitation spectra.

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24

Singh, Mandeep, W. M. Chen, N. T. Son, and B. Monemar. "Efficient excitation transfer in silicon studied by Fourier transform photoluminescence excitation spectroscopy." Applied Physics Letters 66, no. 12 (March 20, 1995): 1498–500. http://dx.doi.org/10.1063/1.113667.

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25

Robins, L. H., A. J. Paul, C. A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El-Masry. "Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 221–26. http://dx.doi.org/10.1557/s1092578300002490.

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InxGa1−xN films with x=0.06 to x=0.49 were characterized by optical transmittance, Raman, and photoluminescence excitation spectroscopies. Previous microstructural characterizations detected phase separation only in films with x>0.2. The transmittance data suggest that compositional inhomogeneity is also present in the lower-x films (x<0.2). Both Raman and photoluminescence excitation spectra show features that correlate with compositional inhomogeneity and phase separation in the films with x>0.2. The composition dependence of the Raman spectra, from x=0.28 to x=0.49, is consistent with an increase in the size of the phase-separated regions with increasing x.

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26

Andolina, Christopher M., William G. Holthoff, Phillip M. Page, Ryan A. Mathews, Janet R. Morrow, and Frank V. Bright. "Spectroscopic System for Direct Lanthanide Photoluminescence Spectroscopy with Nanomolar Detection Limits." Applied Spectroscopy 63, no. 5 (May 2009): 483–93. http://dx.doi.org/10.1366/000370209788346959.

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A new spectroscopic system for direct photoluminescence of lanthanide ions (Ln(III)) through electronic transitions within the 4fn manifold is described. The system is based on an injection seeded frequency tripled (λ = 355 nm) Nd:YAG pump laser coupled with a master oscillator power oscillator (MOPO). The MOPO delivers an average pulse energy of ⪝60 mJ/pulse, is continuously tunable from 425 to 690 nm (Signal) and 735 to 1800 nm (Idler) with a linewidth of <0.2 cm−1, and has a pulse duration of 10–12 ns. Aqueous solutions containing two polyaminocarboxylate complexes, ethylenediaminetetraacetic acid (EDTA) and diethylenetriaminepentaacetic acid (DTPA), and Ln3+ aqua ion for several lanthanides including Eu(III), Tb(III), Dy(III), and Sm(III)) are used as steady-state and time-resolved photoluminescence standards. The versatility of the instrument is demonstrated by excitation scans over a broad visible range for aqueous solutions of complexes of Eu(III), Dy(III), Sm(III), and Tb(III). The Eu(III) excitation band (7Fo→5Do) is recorded over a range of complex concentrations that are 1000–fold less than reported previously, including Eu(EDTA) (1.00 nM), Eu(DTPA) (1.00 nM), and Eu(III) aqua ion (50.0 nM). Emission spectra are recorded in the visible range for Ln(III) complexes at pH 6.5 and 1.00 mM. Excited-state lifetimes for the standards were constant as a function of concentration from 10.0 nM to 1.00 mM for Eu(EDTA) and Eu(DTPA) and from 100 nM to 1.00 mM for Eu(III) aqua ion. Photoluminescence lifetimes in H2O and D2O are recorded and used to calculate the number of bound water molecules for all complexes.

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27

Kumar, Sanjeev, Garima Jain, B. P. Singh, and S. R. Dhakate. "Tunable Photoluminescence of Polyvinyl Alcohol Electrospun Nanofibers by Doping of NaYF4: Eu+3 Nanophosphor." Journal of Nanomaterials 2020 (March 4, 2020): 1–8. http://dx.doi.org/10.1155/2020/1023589.

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NaYF4: Eu+3 nanophosphor/polyvinyl alcohol (PVA) composite nanofibers have been successfully fabricated using the electrospinning technique. The electrospun polymeric nanofibers were characterized by scanning electron microscopy (SEM), high-resolution transmission microscopy (HRTEM), X-ray diffraction (XRD), photoluminescence (PL), and Raman spectroscopy. The flexible polymeric mats exhibited strong red emission at 724 nm at excitation wavelength of 239 nm. 5% concentration of NaYF4: Eu+3 nanophosphor are embedded homogenously inside the PVA matrix. The strong red emission peak attributed to the presence of Eu+3 ions. The characterization of the mats confirmed the uniform dispersion and tunable photoluminescence properties. These photoluminescent nanofibers (PLNs) could be easily fabricated and potentially useful in solid-state lighting applications.

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28

Prins, F. E., G. Lehr, M. Burkard, H. Schweizer, M. H. Pilkuhn, and G. W. Smith. "Photoluminescence excitation spectroscopy on intermixed GaAs/AlGaAs quantum wires." Applied Physics Letters 62, no. 12 (March 22, 1993): 1365–67. http://dx.doi.org/10.1063/1.108680.

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29

Wang, Lei, M. T. Wilson, and N. M. Haegel. "Interpretation of photoluminescence excitation spectroscopy of porous Si layers." Applied Physics Letters 62, no. 10 (March 8, 1993): 1113–15. http://dx.doi.org/10.1063/1.108759.

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30

De Boer, W. D., D. Timmerman, M. A. Roldan Gutierrez, S. I. Molina, and T. Gregokiewicz. "(Invited) Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2." ECS Transactions 45, no. 5 (April 27, 2012): 3–8. http://dx.doi.org/10.1149/1.3700404.

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31

Wagner, J., H. Ennen, and H. D. Müller. "Neodymium complexes in GaP separated by photoluminescence excitation spectroscopy." Journal of Applied Physics 59, no. 4 (February 15, 1986): 1202–4. http://dx.doi.org/10.1063/1.336558.

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32

Freeman, M. R., D. D. Awschalom, and J. M. Hong. "Picosecond photoluminescence excitation spectroscopy of GaAs/AlGaAs quantum wells." Applied Physics Letters 57, no. 7 (August 13, 1990): 704–6. http://dx.doi.org/10.1063/1.103597.

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33

Voos, M., C. Delalande, M. Ben Dahan, J. Wainstain, A. N. Titkov, and A. Halimaoui. "Excitation spectroscopy of the visible photoluminescence of porous silicon." Solid State Communications 94, no. 8 (May 1995): 651–54. http://dx.doi.org/10.1016/0038-1098(95)00031-3.

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34

Johnson, M. B., T. C. McGill, and A. T. Hunter. "Picosecond time‐resolved photoluminescence using picosecond excitation correlation spectroscopy." Journal of Applied Physics 63, no. 6 (March 15, 1988): 2077–82. http://dx.doi.org/10.1063/1.341111.

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35

Jackson, M. K., M. B. Johnson, D. H. Chow, T. C. McGill, and C. W. Nieh. "Electron tunneling time measured by photoluminescence excitation correlation spectroscopy." Applied Physics Letters 54, no. 6 (February 6, 1989): 552–54. http://dx.doi.org/10.1063/1.100928.

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36

Andreev, B. A. "Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures." Physics of the Solid State 47, no. 1 (2005): 86. http://dx.doi.org/10.1134/1.1853451.

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37

Wilson, M. T., C. Y. Li, J. D. MacKenzie, and N. M. Haegel. "Photoluminescence excitation spectroscopy study of CdS nanocrystals in ormosils." Nanostructured Materials 2, no. 4 (July 1993): 391–98. http://dx.doi.org/10.1016/0965-9773(93)90181-a.

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38

Glukhanyuk, V., H. Przybylińska, and A. Kozanecki. "Photoluminescence excitation spectroscopy of Er3+ ions in cubic GaN:Er." physica status solidi (c) 4, no. 7 (June 2007): 2605–8. http://dx.doi.org/10.1002/pssc.200674912.

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39

Murotani, Hideaki, Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, and Yoichi Yamada. "High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells." Applied Physics Express 10, no. 2 (January 26, 2017): 021002. http://dx.doi.org/10.7567/apex.10.021002.

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40

Ng, Wai Lek, M. P. Temple, P. A. Childs, F. Wellhofer, and K. P. Homewood. "Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation." Applied Physics Letters 75, no. 1 (July 5, 1999): 97–99. http://dx.doi.org/10.1063/1.124324.

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41

Dalfors, J., P. O. Holtz, J. P. Bergman, B. Monemar, H. Amano, and I. Akasaki. "Investigation of InGaN/GaN Quantum Well Structures by Photoluminescence and Photoluminescence Excitation Spectroscopy." Physica Scripta T79, no. 1 (1999): 60. http://dx.doi.org/10.1238/physica.topical.079a00060.

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42

Holtz, Janet S. W., Richard W. Bormett, Zhenhuan Chi, Namjun Cho, X. G. Chen, Vasil Pajcini, Sanford A. Asher, Luis Spinelli, Philip Owen, and Marco Arrigoni. "Applications of a New 206.5-nm Continuous-Wave Laser Source: UV Raman Determination of Protein Secondary Structure and CVD Diamond Material Properties." Applied Spectroscopy 50, no. 11 (November 1996): 1459–68. http://dx.doi.org/10.1366/0003702963904683.

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We demonstrate the utility of a new 206.5-nm continuous-wave UV laser excitation source for spectroscopic studies of proteins and CVD diamond. Excitation at 206.5 nm is obtained by intracavity frequency doubling the 413-nm line of a krypton-ion laser. We use this excitation to excite resonance Raman spectra within the π → π amide transition of the protein peptide backbone. The 206.5-nm excitation resonance enhances the protein amide vibrational modes. We use these high signal-to-noise spectral data to determine protein secondary structure. We also demonstrate the utility of this source to excite CVD and gem-quality diamond within its electronic bandgap. The diamond Raman spectra have very high signal-to-noise ratios and show no interfering broad-band luminescence. Excitation within the diamond bandgap also gives rise to narrow photoluminescence peaks from diamond defects. These features have previously been observed only by cathodoluminescence measurements. This new continuous-wave UV source is superior to the previous pulsed sources, because it avoids nonlinear optical phenomena and thermal sample damage; Photoluminescence.

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43

Blum, Christian, Frank Schleifenbaum, Martijn Stopel, Sébastien Peter, Marcus Sackrow, Vinod Subramaniam, and Alfred J. Meixner. "Room temperature excitation spectroscopy of single quantum dots." Beilstein Journal of Nanotechnology 2 (August 30, 2011): 516–24. http://dx.doi.org/10.3762/bjnano.2.56.

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We report a single molecule detection scheme to investigate excitation spectra of single emitters at room temperature. We demonstrate the potential of single emitter photoluminescence excitation spectroscopy by recording excitation spectra of single CdSe nanocrystals over a wide spectral range of 100 nm. The spectra exhibit emission intermittency, characteristic of single emitters. We observe large variations in the spectra close to the band edge, which represent the individual heterogeneity of the observed quantum dots. We also find specific excitation wavelengths for which the single quantum dots analyzed show an increased propensity for a transition to a long-lived dark state. We expect that the additional capability of recording excitation spectra at room temperature from single emitters will enable insights into the photophysics of emitters that so far have remained inaccessible.

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Tian, Xiangling, Rongfei Wei, Shanshan Liu, Yeming Zhang, and Jianrong Qiu. "Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2." Nanoscale 10, no. 2 (2018): 752–57. http://dx.doi.org/10.1039/c7nr08662h.

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We present optical spectroscopy (photoluminescence and Raman spectrum) studies of monolayer transition metal dichalcogenide MoSe₂, with spatial location, temperature and excitation power dependence.

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Gu, S. Q., S. Ramachandran, E. E. Reuter, D. A. Turnbull, J. T. Verdeyen, and S. G. Bishop. "Photoluminescence and excitation spectroscopy of Er‐doped As2S3glass: Novel broad band excitation mechanism." Journal of Applied Physics 77, no. 7 (April 1995): 3365–71. http://dx.doi.org/10.1063/1.358624.

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Kumar, Sanjeev, Garima Jain, Kuldeep Kumar, Ashish Gupta, J. S. Tawale, B. P. Singh, S. R. Dhakate, and P. D. Sahare. "Stress-Induced Structural Phase Transition in Polystyrene/NaYF4: Eu3+ Photoluminescent Electrospun Nanofibers." Journal of Nanomaterials 2022 (April 13, 2022): 1–10. http://dx.doi.org/10.1155/2022/2173629.

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Polystyrene (PS) composite nanofibers were successfully fabricated by embedding NaYF4: Eu3+ nanophosphor into the PS matrix via electrospinning. The photoluminescence spectra, surface morphology and crystal structure of nanofibers were characterized by photoluminescence spectroscopy, scanning electron microscopy, and X-ray diffractometer, respectively. Stress-induced α-NaYF4: Eu3+ (cubic) to β-NaYF4: Eu3+(hexagonal) structural phase transformation was observed in the nanofibers. The stress-induced phase transformation provides enough space for tailoring the properties of novel nanostructures. The composite nanofibers exhibited blue emission with 239 nm excitation wavelength. The XRD pattern of espun nanofibers confirmed the successful incorporation of 5% NaYF4: Eu3+ nanophosphors into the PS matrix. Brilliant values of the chromaticity coordinates of the prepared photoluminescent nanofibers (PLNs) predict their possible use in blue solid-state lighting applications.

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Valverde-Chávez, David A., Esteban Rojas-Gatjens, Jacob Williamson, Sarthak Jariwala, Yangwei Shi, Declan P. McCarthy, Stephen Barlow, Seth R. Marder, David S. Ginger, and Carlos Silva-Acuña. "Nonlinear photocarrier dynamics and the role of shallow traps in mixed-halide mixed-cation hybrid perovskites." Journal of Materials Chemistry C 9, no. 26 (2021): 8204–12. http://dx.doi.org/10.1039/d1tc01492g.

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We examine the role of surface passivation on carrier trapping and nonlinear recombination dynamics in hybrid metal-halide perovskites by means of excitation correlation photoluminescence (ECPL) spectroscopy.

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Qin, Chaochao, Zhinan Jiang, Zhongpo Zhou, Yufang Liu, and Yuhai Jiang. "Excitation Wavelength and Intensity-Dependent Multiexciton Dynamics in CsPbBr3 Nanocrystals." Nanomaterials 11, no. 2 (February 11, 2021): 463. http://dx.doi.org/10.3390/nano11020463.

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CsPbBr3 has attracted great attention due to unique optical properties. The understanding of the multiexciton process is crucial for improving the performance of the photoelectric devices based on CsPbBr3 nanocrystals. In this paper, the ultrafast dynamics of CsPbBr3 nanocrystals is investigated by using femtosecond transient absorption spectroscopy. It is found that Auger recombination lifetime increases with the decrease of the excitation intensity, while the trend is opposite for the hot-exciton cooling time. The time of the hot-carriers cooling to the band edge is increased when the excitation energy is increased from 2.82 eV (440 nm) to 3.82 eV (325 nm). The lifetime of the Auger recombination reaches the value of 126 ps with the excitation wavelength of 440 nm. The recombination lifetime of the single exciton is about 7 ns in CsPbBr3 nanocrystals determined by nanosecond time-resolved photoluminescence spectroscopy. The exciton binding energy is 44 meV for CsPbBr3 nanocrystals measured by the temperature-dependent steady-state photoluminescence spectroscopy. These findings provide a favorable insight into applications such as solar cells and light-emitting devices based on CsPbBr3 nanocrystals.

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Goel, Puja, Manju Arora, and A. M. Biradar. "Evolution of excitation wavelength dependent photoluminescence in nano-CeO2 dispersed ferroelectric liquid crystals." RSC Adv. 4, no. 22 (2014): 11351–56. http://dx.doi.org/10.1039/c3ra47225f.

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The optical properties of nano-ceria (nano-CeO₂) particles dispersed in ferroelectric liquid crystals (FLCs) have been investigated by excitation wavelength dependent photoluminescence (PL) spectroscopy.

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Bhatt, Sandip V., M. P. Deshpande, Bindiya H. Soni, Nitya Garg, and Sunil H. Chaki. "Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization." Solid State Phenomena 209 (November 2013): 111–15. http://dx.doi.org/10.4028/www.scientific.net/ssp.209.111.

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Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

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