Relevant bibliographies by topics / Photolithographie UV

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Photolithographie UV'

Author: Grafiati
Published: 18 May 2024

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Journal articles on the topic "Photolithographie UV"

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Ballandras, S., and D. Hauden. "Applications aux microtechniques de la photolithographie profonde par UV et par rayonnement synchrotron." Annales de Physique 19 (October 1994): C1–73—C1–85. http://dx.doi.org/10.1051/anphys/1994022.

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Casalboni, M., L. Dominici, V. Foglietti, F. Michelotti, E. Orsini, C. Palazzesi, F. Stella, and P. Prosposito. "Bragg Grating Optical Filters by UV Nanoimprinting." Journal of Nanomaterials 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/186429.

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Results on an optical waveguide filter operating in the near IR region are reported. The device consists of a hybrid sol-gel -based grating loaded waveguide, obtained through the merging of conventional photolithography and UV-nanoimprinting. Starting from submicrometric gratings, fabricated by electron beam lithography, a soft mould has been produced and the original structures were replicated onto sol-gel photosensitive films. A final photolithographic step allowed the production of grating-loaded channel waveguides. The devices were optically characterized by transmission measurements in the telecom range 1450–1590 nm. The filter extinction ratio is −11 dB and the bandwidth is 1.7 nm.
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Guijt, Rosanne M., and Michael C. Breadmore. "Maskless photolithography using UV LEDs." Lab on a Chip 8, no. 8 (2008): 1402. http://dx.doi.org/10.1039/b800465j.

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Noniewicz, Konrad, Zbigniew K. Brzozowski, and Irmina Zadrozna. "UV-sensitive polyarylates as photolithographic emulsions." Journal of Applied Polymer Science 60, no. 7 (May 16, 1996): 1071–82. http://dx.doi.org/10.1002/(sici)1097-4628(19960516)60:7<1071::aid-app19>3.0.co;2-3.

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Magklaras, Aris, Panayiotis Alefragis, Christos Gogos, Christos Valouxis, and Alexios Birbas. "A Genetic Algorithm-Enhanced Sensor Marks Selection Algorithm for Wavefront Aberration Modeling in Extreme-UV (EUV) Photolithography." Information 14, no. 8 (July 28, 2023): 428. http://dx.doi.org/10.3390/info14080428.

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In photolithographic processes, nanometer-level-precision wavefront-aberration models enable the machine to be able to meet the overlay (OVL) drift and critical dimension (CD) specifications. Software control algorithms take as input these models and correct any expected wavefront imperfections before reaching the wafer. In such way, a near-optimal image is exposed on the wafer surface. Optimizing the parameters of these models, however, involves several time costly sensor measurements which reduce the throughput performance of the machine in terms of exposed wafers per hour. In that case, photolithography machines come across the trade-off between throughput and quality. Therefore, one of the most common optimal experimental design (OED) problems in photolithography machines (and not only) is how to choose the minimum amount of sensor measurements that will provide the maximum amount of information. Additionally, each sensor measurement corresponds to a point on the wafer surface and therefore we must measure uniformly around the wafer surface as well. In order to solve this problem, we propose a sensor mark selection algorithm which exploits genetic algorithms. The proposed solution first selects a pool of points that qualify as candidates to be selected in order to meet the uniformity constraint. Then, the point that provides the maximum amount of information, quantified by the Fisher-based criteria of G-, D-, and A-optimality, is selected and added to the measurement scheme. This process, however, is considered “greedy”, and for this reason, genetic algorithms (GA) are exploited to further improve the solution. By repeating in parallel the “greedy” part several times, we obtain an initial population that will be the input to our GA. This meta-heuristic approach outperforms the “greedy” approach significantly. The proposed solution is applied in a real life semiconductors industry use case and achieves interesting industry as well as academical results.
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Gordillo, H., I. Suárez, R. Abargues, P. Rodríguez-Cantó, S. Albert, and J. P. Martínez-Pastor. "Polymer/QDs Nanocomposites for Waveguiding Applications." Journal of Nanomaterials 2012 (2012): 1–9. http://dx.doi.org/10.1155/2012/960201.

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In this paper we review our recent progress in a still young type of active waveguides based on hybrid organic (polymer)—inorganic (semiconductor quantum dots) materials. They can be useful for the implementation of new photonic devices, because combining the properties of the semiconductor nanostructures (quantum size carrier confinement and temperature independent emission) with the technological capabilities of polymers. These optical waveguides can be easily fabricated by spin-coating and UV photolithography on many substrates (SiO2/Si, in the present work). We demonstrate that it is possible to control the active wavelength in a broad range (400–1100 nm), just by changing the base quantum dot material (CdS, CdSe, CdTe and PbS, but other are possible), without the necessity of changing fabrication conditions. Particularly, we have determined the optimum conditions to produce multi-color photoluminescence waveguiding by embedding CdS, CdSe and CdTe quantum dots into Poly(methyl methacrylate). Finally, we show new results regarding the incorporation of CdSe nanocrystals into a SU-8 resist, in order to extrapolate the study to a photolithographic and technologically more important polymer. In this case ridge waveguides are able to confine in 2D the light emitted by the quantum dots.
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Wu, Chun-Ying, Heng Hsieh, and Yung-Chun Lee. "Contact Photolithography at Sub-Micrometer Scale Using a Soft Photomask." Micromachines 10, no. 8 (August 18, 2019): 547. http://dx.doi.org/10.3390/mi10080547.

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This paper proposes a method for improving the patterning resolution of conventional contact photolithography from the micrometer, down to the sub-micrometer scale. The key element is a soft polydimethylsiloxane (PDMS) photomask, which is first replicated from a silicon mold and then patterned with a black photoresist (PR) layer to selectively block ultraviolet (UV) light. This soft PDMS photomask can easily form an intimate and conformable contact with a PR-coated substrate and hence can perform contact photolithography with high pattern resolution. The fabrication processes of this black-PR/PDMS soft photomask are experimentally carried out. Using the fabricated soft photomask, UV patterning by contact photolithography with the smallest line-width of 170 nm over a 4” wafer area was successfully achieved. The advantages and potentials of this new type of contact photolithography will be addressed.
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Critchley, Kevin, Lixin Zhang, Hitoshi Fukushima, Masaya Ishida, Tatsuya Shimoda, Richard J. Bushby, and Stephen D. Evans. "Soft-UV Photolithography using Self-Assembled Monolayers." Journal of Physical Chemistry B 110, no. 34 (August 2006): 17167–74. http://dx.doi.org/10.1021/jp0630370.

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Horiuchi, S., T. Fujita, T. Hayakawa, and Y. Nakao. "Micropatterning of Metal Nanoparticles via UV Photolithography." Advanced Materials 15, no. 17 (September 3, 2003): 1449–52. http://dx.doi.org/10.1002/adma.200305270.

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Zaki, M., Uda Hashim, Mohd Khairuddin Md Arshad, M. Nurfaiz, M. F. M. Fathil, A. H. Azman, and R. M. Ayub. "Optimization on Conventional Photolithography Process of 0.98 μm Gap Design for Micro Gap Biosensor Application." Applied Mechanics and Materials 754-755 (April 2015): 524–29. http://dx.doi.org/10.4028/www.scientific.net/amm.754-755.524.

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.Pattern design transfer is the most crucial step in fabrication. Even a small mistake in fabrication can result in device damage or poor performance. To ensure the device performs perfectly, exact design and dimension pattern should be perfectly transferred onto wafer substrate. In this paper, optimization of conventional photolithography process of 0.98μm gap design for micro gap biosensor application is presented. The micro gap pattern on chrome mask is used and the effect of coating profile, UV light, and Post Exposure Bake (PEB) process are investigated. The conventional photolithography process (using a micro gap mask) starts after the silicon oxide, polysilicon and aluminium have been deposited on top of the substrate. Each set of experiment conducted by pairing the element investigated coating profile, UV light, and PEB, with the normal specification of photolithography process. It was observed that 0.98μm gap size can be achieved by choosing suitable process parameters i.e. thickness of coating profile, time and temperature used for UV light and PEB.
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Dissertations / Theses on the topic "Photolithographie UV"

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Regagnon, Théo. "Modélisation in vitro du muscle sur membrane silicone microstructurée par photolithographie UV." Electronic Thesis or Diss., Université de Montpellier (2022-....), 2023. http://www.theses.fr/2023UMONS073.

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L'objectif du projet de thèse était de mettre au point un modèle in vitro de myotubes humains différenciés et alignés pouvant être soumis à une tension mécanique. Pour cela, un hybride organique-inorganique, l'EETMOS [2-(3,4 epoxycyclohexylethyltrimethoxysilane)] a été microstructuré par photolithographie UV sur une membrane en PDMS. Cela permet de créer un support flexible avec en surface des lignes parallèles entre elles pouvant être ensuite étiré et tout en favorisant l'alignement des myotubes.L'EETMol est le produit de synthèse sol-gel, une méthode de chimie douce, de l'EETMOS en milieu acide. Ce sol est ensuite déposé par spin coating sur la surface préalablement activée par traitement plasma du PDMS. Les lignes sont ensuite tracées par photolithographie UV avec un laser de haute précision. Les supports microstructurés sont ensuite biofonctionnalisés avec des ligands à base de peptides d'adhésion issus de la matrice extracellulaire. Ceux-ci ont été spécialement synthétisés pour présenter des groupements silylés en surface afin de générer des liaisons covalentes avec le PDMS ce qui permet d'assurer une accroche solide des myotubes au support.L'espacement entre les microstructures ainsi que leur hauteur ont été optimisés pour favoriser le développement des myotubes humains. Après optimisation et analyse par immunofluorescence, des myotubes avec un diamètre de 30µm ont été obtenus sur des supports dont la hauteur des microstructures est de 8µm et leur espacement de 75µm.Enfin, un protocole d'étirement mécanique a été mis au point (10% d'amplitude, 1Hz, deux cycles d'une heure d'étirement, deux heures de repos, une heure d'étirement, séparés par 20h de repos). Un effet sur l'expression de facteurs de transcription myogéniques (MoyG) et sur certaines protéines du sarcomère a été observé suggérant un effet positif de ce protocole d'étirement sur la différenciation des myotubes humains.Ce modèle pourrait être utiliser dans le screening de biomolécules ou pour l'évaluation chez des patients, après micro-biopsie, de leur réponse musculaire au stress mécanique
Our aim was to propose an in vitro model of differentiated and aligned human skeletal myotubes. To this end, we describe the micropatterning on a PDMS [poly(dimethylsiloxane)] substrate of EETMOS [2-(3,4 epoxycyclohexylethyltrimethoxysilane)] an organic-inorganic hybrid polymer to produce a network of parallel lines that can be stretchable to optimize differenciation.The EETMOS-based resin was synthesized by sol-gel process and polymerized using UV-photolithography. Human primary myoblasts were seeded onto the microstructurated substrate to be, after proliferation, stretched to differentiate into aligned myotubes.The effect of the spacing between the parallel lines and their height was assessed by immunofluorescence. After an optimization of the model, we ended up with 30µm large myotubes reached with a 75µm spacing and 8 µm high microstructures. Then we functionalized the silicone with the use of silylated peptide ligands derived from extracellular matrix adhesion proteins to avoid detachment of the myotubes from their support. A stretching protocol was then optimized (10% from L0, 1Hz, two cycles of 1h stretching / 2h rest / 1h stretching with 20h rest in between). An improvement in the expression of sarcomere proteins and myogenic regulatory factors (MyoG) was observed with stretching in relation to better differentiation of the myogenic progeniteur. The in vitro model that we propose would be a very useful tool to evaluate in a patient, from a microbiopsy, his muscular responses to mechanical stress
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Stehlin, Fabrice. "Photolithographie UV-profond d'oxoclusters métalliques : Des processus photochimiques aux applications en nanofabrication." Phd thesis, Université de Haute Alsace - Mulhouse, 2013. http://tel.archives-ouvertes.fr/tel-01067489.

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Le but principal de ce travail de thèse est de proposer un matériau précurseur d'oxydes métalliques (ZrO2, TiO2, HfO2) compatible avec la technique de photolithographie interférentielle DUV. Des oxoclusters de métaux (MOC) de transitions obtenus par complexation d'un ligand organique et hydrolysé partiellement ont été proposé comme briques élémentaires pour construire ces nanostructures. Le recours à des longueurs d'onde DUV (193 nm) permet d'exciter directement les MOC, ce qui conduit à une réticulation photoinduite, et confère à la résine un caractère de photoresist négatif. Une étude spectroscopique détaillée a permis de proposer un mécanisme de photoréticulation. Cette étude s'est appuyée essentiellement sur des techniques de suivi in situ de la réaction photochimique, par ellipsométrie spectroscopique et RT-FTIR. La nanostructuration a été effectuée essentiellement par lithographie interférométrique DUV (DUV-IL) à 193 nm et étendue à la stéréolithographie biphotonique. La DUV-IL a été choisie pour son potentiel d'écriture de nanostructures sur des surfaces relativement importantes, dans des conditions standard d'atmosphère et température. De plus, dans le cas des TiOC, les nanostructures peuvent être rendues inorganiques à température ambiante par un traitement photochimique supplémentaire. Dans le cas de ZrOC et HfOC, une étape supplémentaire de recuit thermique permet d'obtenir une structure de type MO2 cristallisée.
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Stehlin, Fabrice. "Photolithographie UV-profond d’oxoclusters métalliques : Des processus photochimiques aux applications en nanofabrication." Thesis, Mulhouse, 2013. http://www.theses.fr/2013MULH8376/document.

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Le but principal de ce travail de thèse est de proposer un matériau précurseur d'oxydes métalliques (ZrO2, TiO2, HfO2) compatible avec la technique de photolithographie interférentielle DUV. Des oxoclusters de métaux (MOC) de transitions obtenus par complexation d’un ligand organique et hydrolysé partiellement ont été proposé comme briques élémentaires pour construire ces nanostructures. Le recours à des longueurs d'onde DUV (193 nm) permet d'exciter directement les MOC, ce qui conduit à une réticulation photoinduite, et confère à la résine un caractère de photoresist négatif. Une étude spectroscopique détaillée a permis de proposer un mécanisme de photoréticulation. Cette étude s'est appuyée essentiellement sur des techniques de suivi in situ de la réaction photochimique, par ellipsométrie spectroscopique et RT-FTIR. La nanostructuration a été effectuée essentiellement par lithographie interférométrique DUV (DUV-IL) à 193 nm et étendue à la stéréolithographie biphotonique. La DUV-IL a été choisie pour son potentiel d'écriture de nanostructures sur des surfaces relativement importantes, dans des conditions standard d'atmosphère et température. De plus, dans le cas des TiOC, les nanostructures peuvent être rendues inorganiques à température ambiante par un traitement photochimique supplémentaire. Dans le cas de ZrOC et HfOC, une étape supplémentaire de recuit thermique permet d'obtenir une structure de type MO2 cristallisée
The main purpose of this thesis is to provide a material precursor of metal oxides (ZrO2, TiO2, HfO2) compatible with DUV interference photolithography technique. Transition metal oxoclusters (MOC) obtained by complexation of an organic ligand and a partial hydrolysis have been proposed as building blocks. DUV irradiation (193 nm) allows a direct excitation of the MOC, which leads a photo-induced crosslinking and gives to the material a negative photoresist character. A detailed spectroscopic study allowed proposing a mechanism of photocrosslinking. This study relied primarily on in situ techniques to follow the photochemical reaction by spectroscopic ellipsometry and RT-FTIR. The nanostructuring was performed by interferometric DUV lithography at 193 nm and could be extended to 2-photon stereolithography. DUV-IL was chosen for its potential to write nanostructures on relatively large areas, in standard atmosphere and temperature conditions. Furthermore, in the case of TiOC, the nanostructures can be fully mineralised at room temperature by an additionnal photochemical treatment. For ZrOC and HfOC, an additional thermal annealing step allows to obtain a crystalline structure MO2
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Liu, Xiyuan. "Design, analysis and fabrication of micro optical systems involving UV-deep lithography - with an application in atomic physics." [S.l. : s.n.], 2008. http://nbn-resolving.de/urn:nbn:de:bsz:180-madoc-21393.

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Servera, Marc. "Etude d'un système de masquage pour microlithographie sensible en UV profond et développable par plasma d'oxygène." Montpellier 2, 1990. http://www.theses.fr/1990MON20092.

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Un nouveau systeme de masquage pour microlithographie, sensible en uv profonde, a ete etudie. Sa composition originale fait intervenir un polymere methacrylique modifiable par acidolyse photoamorcee en presence de tosylate de benzoine. Cette resine est developpable en negatif par voie humide, en positif par plasma d'oxygene apres mise en uvre d'un procede de silylation selective. L'evaluation des performances microlithographiques a demontre dans les deux cas la faisabilite d'une resolution submicronique
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Yeh, Chun-Cheng. "ZnO micro- and nanostructures from Deep-UV photosensitive solutions for electronic and magnetic applications." Thesis, Mulhouse, 2017. http://www.theses.fr/2017MULH1359/document.

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Ce travail a consisté à mettre au point et étudier des formulations à base d’un précurseur photosensible de Zn (Zinc méthacrylate, ZnMAA). Déposé sous forme de film mince, ce précurseur peut être réticulé par une irradiation dans l’UV profond (193 nm). Il est montré que la réticulation est la conséquence d’une décomposition photoinduite partielle des précurseurs, qui provoque des réactions de condensations, conduisant à la formation du réseau Zn-O-Zn. Cette réaction a été caractérisée par spectroscopie FTIR, XPS et ellipsométrie (chapitre III). Il est montré qu’elle est partielle mais efficace pour conférer au matériau un caractère de résine à tonalité négative, pouvant être utilisée en écriture laser directe. Des structures submicrométriques ont été préparées avec cette résine. Les différentes étapes du procédé de photolithographie sont discutées dans le chapitre IV. En particulier, l’étape de recuit thermique pour obtenir un matériau ZnO est étudiée pour expliquer son impact sur la géométrie des structures obtenues. Le matériau ZnO structuré par cette voie est utilisé enfin pour fabriquer des dispositifs : transistor, capteur de gaz, réseau à propriétés magnétiques, prouvant l’intérêt de cette approche de microstructuration basée sur un matériau préparé par voie liquide
In this thesis, an in-depth investigation to the photosensitive zinc methacrylate (ZnMAA) precursor was made. Zinc methacrylate can be crosslinked under DUV (193 nm) irradiation. The photo-induced solidification is attributed to the partial decomposition of the ZnMAA complex, which gives rise to the following hydrolysis-condensation reactions and the formation of Zn-O-Zn networks. The bonding variation and decomposition of organic species caused by DUV irradiation were carefully investigated by FTIR, XPS and ellipsometry and discussed in Chapter III. DUV irradiation provokes clivage of MAA ligands from zinc cations. However, the intensity of MAA ligands can only be reduced to ~2/3 of its initial intensity regardless the extension of irradiation time, implying only a small amount oxide network can be induced by DUV irradiation. The small amount of Zn-O-Zn networks inside the photo-irradiated regions can effectively decrease the solubility of photo-irradiated regions in polar solvents, which makes ZnMAA precursor just like a negative tone resist and able to be patterned into two-dimensional structures by DUV lithography. Due to good photosensitivity to DUV light (193 nm), the dimension of DUV-patterned ZnMAA structures can be decreased to sub-micro by using binary masks and the effects of each pattering step including (i) DUV exposure, (ii) prebaking and (iii) development on the size and shape of DUV-patterned ZnMAA structures are discussed in Chapter IV. In order to fabricate nanoscale ZnMAA structures, a home-made DUV interference system was used to pattern ZnMAA precursor and 300 nm periodic lines were successfully made. Applications as TFT transistor, gaz sensor and magnetic materials are shown
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Liu, Chao. "Optical modeling and resist metrology for deep-UV photolithography." Texas A&M University, 2005. http://hdl.handle.net/1969.1/4233.

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This thesis first presents a novel and highly accurate methodology for investigating the kinetics of photoacid diffusion and catalyzed-deprotection of positive-tone chemically amplified resists during post exposure bake (PEB) by in-situ monitoring the change of resist and capacitance (RC) of resist film during PEB. Deprotection converts the protecting group to volatile group, which changes the dielectric constant of resist. So the deprotection rate can be extracted from the change of capacitance. The photoacid diffusivity is extracted from the resistance change because diffusivity determines the rate of change of the acid distribution. Furthermore, by comparing the R and C curves, the dependence of acid diffusivity on reaction state can be extracted. The kinetics of non-Fickean acid transportation, deprotection, free volume generation and absorption/escaping, and resist shrinkage is analyzed and a comprehensive model is proposed that includes these chemical/physical mechanisms. Then in this thesis a novel lithographic technique, liquid immersion contact lithography (LICL) is proposed and the simulations are performed to illustrate its main features and advantages. Significant depth-of-field (DOF) enhancement can be achieved for large pitch gratings with deep-UV light (λ=248nm) illumination with both TM and TE polarizations by liquid immersion. Better than 100nm DOF can be achieved by when printing 70nm apertures. The simulation results show that it is very promising to apply this technique in scanning near field optical microscopy. Finally, a rigorous, full vector imaging model of non-ideal mask is developed and the simulation of the imaging of such a mask with 2D roughness is performed. Line edge roughness (LER) has been a major issue limiting the performance of sub-100nm photolithography. A lot of factors contribute to LER, including mask roughness, lens imperfection, resist chemistry, process variation, etc. To evaluate the effect of mask roughness on LER, a rigorous full vector model has been developed by the author. We calculate the electromagnetic (EM) field immediately after a rough mask by using TEMPEST and simulate the projected wafer image with SPLAT. The EM field and wafer image deviate from those from an ideal mask. LER is finally calculated based on the projected image.
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McAdams, Christopher Lee. "Polymers and photoactive compounds for non-chemically amplified deep-UV photoresists /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004335.

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KAOU, LARBI NEILA. "Conception et realisation d'un dispositif en silicium permettant une connexion passive entre un circuit d'optique integree et un ruban de fibres optiques." Besançon, 1999. http://www.theses.fr/1999BESA2045.

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Dans cette these nous presentons un nouveau systeme d'alignement 3d passif entre un circuit d'optique integree et un ruban de fibres optiques. Le dispositif developpe consiste a reporter les fibres et le composant sur une plate-forme commune en silicium. Les fibres sont positionnees avec une grande precision dans des sillons en v, obtenus par gravure chimique anisotrope du silicium. L'alignement est obtenu grace a l'insertion de plots en forme de champignons realises sur le composant, dans des ouvertures correspondantes ayant des geometries specifiques, et qui sont obtenues par gravure ionique reactive dans des membranes de silicium. Les elements de positionnement utilises presentent l'avantage de permettre une connexion demontable de n'importe quel type de composant. Nous avons optimise le dimensionnement des differents elements constituants notre micro-connecteur a la suite d'une simulation mecanique de notre structure d'accrochage. Cette etude nous a meme permis d'etendre la solution a la connexion de composants courbes. Les mesures des taux de couplage obtenues sur des guides sisio 2 ont conduit a des resultats prometteurs.
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Arbring, Theresia. "The impact of geometrical variations on the transport properties of organic electronic ion pumps." Thesis, Linköpings universitet, Fysik och elektroteknik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-94544.

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The organic electronic ion pump (OEIP) is an electrically controlled polymer-based device that has the capability to interact with biological systems down to a single cell level by mimicking neural signalling. This is accomplished by translation of an electrical signal into a chemical output, such as ions and neurotransmitters. Because of the combined spatial and temporal precision, this is a technology with a promising future as an advanced therapeutic device. Depending on the application, the OEIP requires different geometries. Implants that will be used to control on a single cell level require very small dimensions, while for example extracorporeal mounted OIEPs, with only the delivery channel penetrating the skin, require much longer channels. Despite the application, it is necessary to have a good knowledge about the transport and delivery properties and how they change due to the geometry. These properties have been observed as very varying and unstable in early unpublished results, and these findings motivate this project. This project includes photolithographic fabrication and investigation of transport and delivery properties such as effective resistance, efficiency and stability of OEIPs with varying delivery channel lengths and widths. Shorter delivery channels show a consistent but relatively low efficiency. Delamination between different layers of the device is suspected as the cause. Initially, the longer delivery channels show a low functionality, most probably due to poor encapsulation. It is suggested that a soft, water-permeable plastic best encapsulates OEIPs that will be used as a medical implant, while a material impermeable to water, for example a metal, could successfully encapsulate OEIPs operating in air.
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Conference papers on the topic "Photolithographie UV"

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Harned, Noreen. "Deep-UV photolithography cluster performance." In SPIE's 1994 Symposium on Microlithography, edited by Timothy A. Brunner. SPIE, 1994. http://dx.doi.org/10.1117/12.175487.

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Bauer, Harry H., Matthias Heller, and Norbert Kaiser. "Optical coatings for UV photolithography systems." In Optical Instrumentation & Systems Design. SPIE, 1996. http://dx.doi.org/10.1117/12.246823.

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Dunn, Diana D., Katherine C. Norris, and Linda K. Somerville. "0.5-um deep-UV photolithography manufacturing." In SPIE's 1994 Symposium on Microlithography, edited by Timothy A. Brunner. SPIE, 1994. http://dx.doi.org/10.1117/12.175464.

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Ruff, Bruce, Elizabeth Tai, and Robert Brown. "Broadband Deep-UV High NA Photolithography System." In 1989 Microlithography Conferences, edited by Burn J. Lin. SPIE, 1989. http://dx.doi.org/10.1117/12.953173.

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Dunn, Diana D., James A. Bruce, and Michael S. Hibbs. "Deep-UV photolithography linewidth variation from reflective substrates." In Optical/Laser Microlithography IV, edited by Victor Pol. SPIE, 1991. http://dx.doi.org/10.1117/12.44770.

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Yapici, Murat Kaya, and Ilyas Farhat. "UV-LED exposure system for low-cost photolithography." In SPIE Advanced Lithography, edited by Kafai Lai and Andreas Erdmann. SPIE, 2014. http://dx.doi.org/10.1117/12.2046123.

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Montemezzani, G., St Pfändler, and P. Günter. "Photorefractive properties of Bi4Ge3O12 crystals in the ultraviolet spectral range." In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/pmed.1991.ma5.

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To the best of our knowledge, only preliminary studies of photorefractive effects in the ultraviolet (UV) spectral range have been reported up to now, e.g. in KH2PO4 [1], RbZnBr4 [2] (both at low temperatures), and in LiNbO3 [3, 4] and LiTaO3 [5] in the near UV. Photorefractive materials operating in the UV however could be very useful for all types of coherent optical beam interactions, e.g. beam amplification, dynamical holography, phase-conjugation or photolithographic applications where the use of shorter wavelengths leads to an increased resolution.
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Du, Liqun, Shenmiao Zhu, Jiang Qin, and Chong Liu. "Numerical and experimental study on SU-8 UV photolithography." In 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, edited by Li Yang, Yaolong Chen, Ernst-Bernhard Kley, and Rongbin Li. SPIE, 2007. http://dx.doi.org/10.1117/12.783364.

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9

K M, Dhivakar, and Anshu Sarje. "A Versatile, Low-Cost UV Exposure System for Photolithography." In 2021 Smart Technologies, Communication and Robotics (STCR). IEEE, 2021. http://dx.doi.org/10.1109/stcr51658.2021.9588848.

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10

Zhang, Lidan, Shengyuan Chang, Xi Chen, Yimin Ding, Md Tarek Rahman, Yao, Duan, Pavel Terekhov, and Xingjie Ni. "Wafer-scale single-aperture near-infrared metalens fabricated by deep UV photolithography." In CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.ff2d.4.

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We reported a wafer-scale near-infrared metalens with an aperture size of eight centimeters operating around 1.5 µm fabricated using deep UV photolithography. Our measurements show that it has diffraction-limited performance with about 80% focusing efficiency.
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