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Books on the topic 'Phase change memory GST'

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Author: Grafiati

Published: 25 May 2024

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1

Redaelli, Andrea, ed. Phase Change Memory. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69053-7.

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2

1976-, Chen Yiran, ed. Nonvolatile memory design: Magnetic, resistive, and phase change. Boca Raton, FL: Taylor & Francis, 2012.

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3

Lan, Rui. Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2217-8.

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4

Durable Phase-Change Memory Architectures. Elsevier, 2020. http://dx.doi.org/10.1016/s0065-2458(20)x0004-0.

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5

Asadinia, Marjan, and Hamid Sarbazi-Azad. Durable Phase-Change Memory Architectures. Elsevier Science & Technology, 2020.

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6

Asadinia, Marjan, and Hamid Sarbazi-Azad. Durable Phase-Change Memory Architectures. Elsevier Science & Technology Books, 2020.

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7

Muralimanohar, Naveen, Moinuddin K. Qureshi, Sudhanva Gurumurthi, and Bipin Rajendran. Phase Change Memory: From Devices to Systems. Springer International Publishing AG, 2011.

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8

Qureshi, Moinuddin K., Sudhanva Gurumurthi, and Bipin Rajendran. Phase Change Memory: From Devices to Systems. Morgan & Claypool Publishers, 2011.

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9

Qureshi, Moinuddin K., Sudhanva Gurumurthi, and Bipin Rajendran. Phase Change Memory: From Devices to Systems. Morgan & Claypool Publishers, 2011.

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10

Redaelli, Andrea. Phase Change Memory: Device Physics, Reliability and Applications. Springer, 2018.

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11

Redaelli, Andrea. Phase Change Memory: Device Physics, Reliability and Applications. Springer, 2017.

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12

Chen, Yiran, and Hai Li. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change. Taylor & Francis Group, 2017.

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13

Li, Hai. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change. Taylor & Francis Group, 2011.

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14

Chen, Yiran, and Hai Li. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change. Taylor & Francis Group, 2017.

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15

Chen, Yiran, and Hai Li. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change. Taylor & Francis Group, 2017.

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16

Chen, Yiran, and Hai Li. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change. Taylor & Francis Group, 2017.

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17

Chen, Yiran, and Hai Li. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change. Taylor & Francis Group, 2017.

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18

Lan, Rui. Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory. Springer, 2020.

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19

Bernasconi, Marco, Carlo Massobrio, Jincheng Du, and Philip S. Salmon. Molecular Dynamics Simulations of Disordered Materials: From Network Glasses to Phase-Change Memory Alloys. Springer, 2015.

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20

Bernasconi, Marco, Carlo Massobrio, Jincheng Du, and Philip S. Salmon. Molecular Dynamics Simulations of Disordered Materials: From Network Glasses to Phase-Change Memory Alloys. Springer, 2015.

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21

Lan, Rui. Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory. Springer Singapore Pte. Limited, 2021.

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22

Bernasconi, Marco, Carlo Massobrio, Jincheng Du, and Philip S. Salmon. Molecular Dynamics Simulations of Disordered Materials: From Network Glasses to Phase-Change Memory Alloys. Springer, 2016.

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23

Tiwari, Sandip. Phase transitions and their devices. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198759874.003.0004.

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Abstract:

Phase transitions as a collective response of an ensemble, with appearance of unique stable properties spontaneously, is critical to a variety of devices: electronic, magnetic, optical, and their coupled forms. This chapter starts with a discussion of broken symmetry and its manifestation in the property changes in thermodynamic phase transition and the Landau mean-field articulation. It then follows it with an exploration of different phenomena and their use in devices. The first is ferroelectricity—spontaneous electric polarization—and its use in ferroelectric memories. Electron correlation effects are explored, and then conductivity transition from electron-electron and electron-phonon coupling and its use in novel memory and device forms. This is followed by development of an understanding of spin correlations and interactions and magnetism—spontaneous magnetic polarization. The use and manipulation of the magnetic phase transition in disk drives, magnetic and spin-torque memory as well as their stability is explored. Finally, as a fourth example, amorphous-crystalline structural transition in optical, electronic, and optoelectronic form are analyzed. This latter’s application include disk drives and resistive memories in the form of phase-change as well as those with electochemical transport.

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