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Relevant bibliographies by topics / Perpendicularly magnetized ultra-thin film-Ta

Academic literature on the topic 'Perpendicularly magnetized ultra-thin film-Ta'

Author: Grafiati

Published: 14 March 2023

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Journal articles on the topic "Perpendicularly magnetized ultra-thin film-Ta"

1

Ouk, Minae, and Geoffrey S. D. Beach. "Perpendicularly Magnetized Thin-Film Antidot Arrays for Superparamagnetic Microbead Actuation." IEEE Transactions on Magnetics 55, no. 9 (September 2019): 1–7. http://dx.doi.org/10.1109/tmag.2019.2918264.

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2

Hassan, M., S. Laureti, C. Rinaldi, F. Fagiani, S. Varotto, G. Barucca, N. Y. Schmidt, G. Varvaro, and M. Albrecht. "Perpendicularly magnetized Co/Pd-based magneto-resistive heterostructures on flexible substrates." Nanoscale Advances 3, no. 11 (2021): 3076–84. http://dx.doi.org/10.1039/d1na00110h.

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Flexible PMA spin-valve thin film stacks with a high magneto-electric robustness aginst bending were obtained on large-area substrates by using an effective and versatile Au-mediated transfer and bonding strategy.

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3

Maji, Saikat, Ankan Mukhopadhyay, Soubhik Kayal, and P. S. Anil Kumar. "Domain wall chirality reversal by interfacial engineering in Pt/Co/Pt based perpendicularly magnetized systems." Journal of Applied Physics 133, no. 2 (January 14, 2023): 023907. http://dx.doi.org/10.1063/5.0117198.

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Heavy metal/ferromagnet interfaces in systems with perpendicular magnetic anisotropy (PMA) hosts chiral Néel wall with the assistance of interfacial Dzyaloshinskii–Moriya interaction (iDMI). We have investigated field induced domain wall motion in the creep regime to estimate the effective iDMI strength, [Formula: see text] of sputter-deposited Ta/Pt/Co/Pt and Ta/Pt/Co/Au/Pt thin films that exhibit PMA. Two similar Pt/Co interfaces on either side of the Co layer in the Ta/Pt/Co/Pt system lead to a small [Formula: see text] with a negative sign that supports the Néel type domain wall of right-handed chirality. Ultrathin Au layers of different thicknesses have been deposited at the top Co/Pt interface to introduce asymmetry around the Co layer and control the [Formula: see text]. Here, two interfaces (Pt/Co and Au/Co) of opposite iDMI polarity have been chosen to invert the domain wall chirality to the left-handed chirality instead of the right-handed chirality found in the Ta/Pt/Co/Pt system.

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4

Chaves-O'Flynn, Gabriel D., Eric Vanden-Eijnden, D. L. Stein, and A. D. Kent. "Energy barriers to magnetization reversal in perpendicularly magnetized thin film nanomagnets." Journal of Applied Physics 113, no. 2 (January 14, 2013): 023912. http://dx.doi.org/10.1063/1.4775485.

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5

Zhou, Sai, Yiyue Wang, and Yaowen Liu. "Modelling of Magnetic Stray Fields in Multilayer Magnetic Films with In-Plane or Perpendicular Anisotropy." Magnetochemistry 8, no. 11 (November 19, 2022): 159. http://dx.doi.org/10.3390/magnetochemistry8110159.

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The magnetic stray field is an unavoidable consequence of magnetic multilayers, which may have a significant influence on the performance of spintronic devices. Based on Maxwell’s magnetostatics theory, here we numerically calculated the distributions of magnetic stray fields and self-demagnetizing fields in a series of patterned multilayer thin-film structures with either an in-plane or a perpendicularly magnetized ferromagnetic layer. The stray field above the ferromagnetic layer is inhomogeneous, showing the dramatic changes near the sample edge, but the uniformity in the center region could be improved with the increasing sample size. The stray field strength tends to zero for large samples, increases with the increase in the hard-layer thickness, and decreases with the increase in the distance D away from the ferromagnetic layer. In the multilayer samples, the separately simulated stray field and self-demagnetizing field within the soft layer agree well with the classic magnetostatic relationship of B=μ0(Hd+M). For the in-plane magnetized trilayer sample, the magnetic-flux density within the soft ferromagnetic layer slightly decreases in the antiparallel magnetization alignment and increases in the parallel alignment state with the increase in the intermediate non-magnetic-layer thickness. In contrast, for the sample with the perpendicular magnetization, the magnetic-flux density decreases as the non-magnetic layer is thickened for both the antiparallel and parallel state. This study may provide a theoretical basis for the design of thin-film spintronic devices.

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6

Sinha, Banibrato, Sreekar Guddeti, and P. S. Anil Kumar. "Engineering the tilt angle in quasi-perpendicularly magnetized Ta/Pt/CoFeB/Pt thin films." Physica B: Condensed Matter 572 (November 2019): 251–55. http://dx.doi.org/10.1016/j.physb.2019.08.020.

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7

Cockbill, Louisa. "Combining a topological insulator with a perpendicular magnetized ferromagnetic thin film." Scilight 2017, no. 16 (October 9, 2017): 160003. http://dx.doi.org/10.1063/1.5008260.

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8

Xing, Tao, Nicolas Vernier, Xueying Zhang, Alessio Raskine, and Weisheng Zhao. "Real-time probing technique of domain wall dynamic in perpendicularly magnetized film." AIP Advances 13, no. 1 (January 1, 2023): 015306. http://dx.doi.org/10.1063/5.0131391.

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We present the study of a rarely mentioned method for measuring the magnetic domain wall velocity, which makes it possible to have a real-time probing of the domain wall movement in the perpendicularly magnetized thin film. We have compared this technique in detail with the most common Kerr imaging method. The comparison results show interesting differences if the spot size is too small. It can be explained by the dendritic shape of the domain wall. By changing the size spot, we propose a basic model that describes quite well the transit time in the laser spot as a function of its size and makes it possible to extract the velocity and depth of the dendrites. By generalizing our method, it helps people to understand magnetic domain wall dynamics from the temporal dimension and helps the academic community to obtain intrinsic domain wall motion characteristics in the film sample, ultimately promoting the development of spintronic devices.

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9

Xing, Tao, Nicolas Vernier, Xue Ying Zhang, You Guang zhang, and Wei Sheng Zhao. "Temporal Observation of Barkhausen Avalanche with Short-Range Interaction in Perpendicularly Magnetized Thin Film." Materials Science Forum 1070 (October 13, 2022): 183–87. http://dx.doi.org/10.4028/p-672442.

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We present here a method for measuring the temporal Bakehausen scaling exponent in a two-dimensional thin film. The scaling exponent with long-range interaction is observed to be consistent with theoretical and experimental results. In addition, we demonstrate the characteristic exponent with short-range interaction. Our method contributes to the understanding of DW dynamics and helps to optimize spintronic devices.

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10

Chen, Shaohai, Jihang Yu, Qidong Xie, Xiangli Zhang, Weinan Lin, Liang Liu, Jing Zhou, et al. "Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient." ACS Applied Materials & Interfaces 11, no. 33 (July 26, 2019): 30446–52. http://dx.doi.org/10.1021/acsami.9b09146.

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Conference papers on the topic "Perpendicularly magnetized ultra-thin film-Ta"

1

Kim, J., M. Mizuguchi, N. Inami, T. Ueno, S. Ueda, and K. Takanashi. "X-ray magnetic circular dichroism and hard x-ray photoelectron spectroscopy of a perpendicularly magnetized D0₂₂-type Mn₇₂Ge₂₈ thin film." In 2017 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/ssdm.2017.ps-12-19.

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