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Journal articles on the topic 'PECVD silicon carbide and silicon nitride'

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Author: Grafiati

Published: 6 September 2023

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1

ILIESCU, Ciprian. "A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS." Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, no. 1-2 (2021): 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.

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The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.

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2

Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.

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We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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3

Abdelal, Aysegul, and Peter Mascher. "(Invited) Comparison of Compositional, Optical and Mechanical Properties of Sicn Thin Films Prepared By Ecr-PECVD with Different Hydrocarbon Precursors." ECS Meeting Abstracts MA2022-02, no. 18 (October 9, 2022): 874. http://dx.doi.org/10.1149/ma2022-0218874mtgabs.

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Silicon carbon nitride (SiCN) ternary compounds present remarkable mechanical strength, bandgap tunability, optical responsivity in the UV region, and dielectric performance in microelectronics due to the combined features of silicon nitride (SiN), silicon carbide (SiC), and carbonitride (CN) [1]. The SiCN compounds can be formed using fabrication methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and chemical synthesis. Successful SiCN thin films fabricated with different techniques and their characteristics have been reported extensively in the literature; however, the influence of hydrocarbon gas precursors has not drawn the same amount of attention for SiCN. Chemical, physical, and mechanical properties of thin films are determined by the growth parameters and the choice of sources used, like the organic single-molecule (methylsilazanes) or highly pure individual gas precursors [2,3]. The chemical vapor deposition systems mainly affect the energy of bombarding ions. Plasma-enhanced CVD has been commonly used for thin-film depositions since it provides low deposition temperature, high purity, good step coverage, and easy control of reaction parameters. Our work focuses on the electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) method to fabricate SiCN thin films. This method differs from other PECVD methods because it can generate a dense, highly ionized plasma (1011 ions/cm3) and ion impingement energies on the substrate as low as 20 eV [4]. A combination of argon diluted silane (SiH4) and molecular nitrogen (N2) are utilized. For carbon incorporation, we explored the influence of methane (CH4), acetylene (C2H2), and ethane (C2H6) hydrocarbon gas precursors on SiCN thin film properties. The stoichiometry, density of the thin film, optical constants, and the bonding structure of SiCN thin films as a function of hydrocarbon carbon flow rates are presented. Due to the hydrogen-containing precursors used, the silicon carbonitride films deposited by CVD methods contain a significant amount of hydrogen (H), lowest for C2H2 and highest for C2H6. Nearly stoichiometric silicon nitride and silicon carbide thin films were also prepared to interpret the measurements further. From Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analysis, quantitative elemental composition distributions including H were found for films deposited with both carbon sources. For further investigation of the bonding structure of SiCN, Fourier Transform Infrared (FTIR) Spectroscopy was performed. Furthermore, we studied the hardness and Young’s modulus by nanoindentation, and optical constants were measured by variable angle spectroscopic ellipsometry (VASE). [1] C.W. Chen, C.C. Huang, Y.Y. Lin, L.C. Chen, K.H. Chen, W.F. Su, Optical prop- erties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection, Diamond Relat. Mater. 14 (3-7) (2005) 1010–1013. [2] Schwarz-Selinger, T., Von Keudell, A., & Jacob, W. (1999). Plasma chemical vapor deposition of hydrocarbon films: The influence of hydrocarbon source gas on the film properties. Journal of Applied Physics, 86(7), 3988-3996. [3] V.I. Ivashchenko, A.O. Kozak, O.K. Porada, L.A. Ivashchenko, O.K. Sinelnichenko, O.S. Lytvyn, T.V. Tomila, V.J. Malakhov, Characterization of SiCN thin films: experimental and theoretical investigations, Thin Solid Films 569 (2014) 57–63. [4] M. G. Boudreau, "SiOxNy Waveguides Deposited by ECR-PECVD", M.Eng. thesis, McMaster University, 1993.

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4

Fang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis, and Alexey Vert. "Thin Film Multichip Packaging for High Temperature Digital Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.

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Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300°C operation, AlN was used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Initial die shear results are presented.

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5

Galvão, Nierlly, Marciel Guerino, Tiago Campos, Korneli Grigorov, Mariana Fraga, Bruno Rodrigues, Rodrigo Pessoa, Julien Camus, Mohammed Djouadi, and Homero Maciel. "The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering." Micromachines 10, no. 3 (March 22, 2019): 202. http://dx.doi.org/10.3390/mi10030202.

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

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6

Knowles, Kevin M., and Servet Turan. "Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites." Journal of the European Ceramic Society 22, no. 9-10 (September 2002): 1587–600. http://dx.doi.org/10.1016/s0955-2219(01)00481-2.

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7

Biasini, V., S. Guicciardi, and A. Bellosi. "Silicon nitride-silicon carbide composite materials." International Journal of Refractory Metals and Hard Materials 11, no. 4 (January 1992): 213–21. http://dx.doi.org/10.1016/0263-4368(92)90048-7.

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8

Kodama, Hironori, Hiroshi Sakamoto, and Tadahiko Miyoshi. "Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 72, no. 4 (April 1989): 551–58. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06174.x.

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9

Pruiti, Natale G., Charalambos Klitis, Christopher Gough, Stuart May, and Marc Sorel. "Thermo-optic coefficient of PECVD silicon-rich silicon nitride." Optics Letters 45, no. 22 (November 12, 2020): 6242. http://dx.doi.org/10.1364/ol.403357.

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10

Greim, J., A. Lipp, and K. Bettles. "Silicon Nitride and Silicon Carbide Turbocharger Rotors." Materials Science Forum 34-36 (January 1991): 623–27. http://dx.doi.org/10.4028/www.scientific.net/msf.34-36.623.

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11

Baril, D., S. P. Tremblay, and M. Fiset. "Silicon carbide platelet-reinforced silicon nitride composites." Journal of Materials Science 28, no. 20 (October 1993): 5486–94. http://dx.doi.org/10.1007/bf00367819.

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12

Liu, Bangwu, Sihua Zhong, Jinhu Liu, Yang Xia, and Chaobo Li. "Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/971093.

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The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.

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13

Huran, J., B. Zaťko, I. Hotový, J. Pezoldt, A. P. Kobzev, and N. I. Balalykin. "PECVD silicon carbide deposited at different temperature." Czechoslovak Journal of Physics 56, S2 (October 2006): B1207—B1211. http://dx.doi.org/10.1007/s10582-006-0351-8.

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14

Justo, João F., and Cesar R. S. da Silva. "Modelling Amorphous Materials: Silicon Nitride and Silicon Carbide." Defect and Diffusion Forum 206-207 (July 2002): 19–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.206-207.19.

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15

Takakura, Eiju, and Susumu Horibe. "Indentation Fatigue of Silicon Carbide and Silicon Nitride." Journal of the Japan Institute of Metals 54, no. 5 (1990): 611–16. http://dx.doi.org/10.2320/jinstmet1952.54.5_611.

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16

Takakura, Eiju, and Susumu Horibe. "Indentation Fatigue of Silicon Carbide and Silicon Nitride." Materials Transactions, JIM 32, no. 5 (1991): 495–500. http://dx.doi.org/10.2320/matertrans1989.32.495.

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17

Munro, R. G., and S. J. Dapkunas. "Corrosion characteristics of silicon carbide and silicon nitride." Journal of Research of the National Institute of Standards and Technology 98, no. 5 (September 1993): 607. http://dx.doi.org/10.6028/jres.098.040.

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18

Liang, Xin, Changlian Chen, Shicong Zhou, Man Xu, Jiayou Ji, Zhiliang Huang, Gangqiang Ding, and Hongliang Zhang. "Silicon Carbide Films Prepared by Silicon Nitride Evaporation." IOP Conference Series: Materials Science and Engineering 678 (November 27, 2019): 012162. http://dx.doi.org/10.1088/1757-899x/678/1/012162.

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19

Agrafiotis, Christos C., Jerzy Lis, Jan A. Puszynski, and Vladimir Hlavacek. "Combustion Synthesis of Silicon Nitride-Silicon Carbide Composites." Journal of the American Ceramic Society 73, no. 11 (November 1990): 3514–17. http://dx.doi.org/10.1111/j.1151-2916.1990.tb06488.x.

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20

Kargin, Yu F., S. N. Ivicheva, A. S. Lysenkov, N. A. Alad’ev, S. V. Kutsev, and L. I. Shvorneva. "Preparation of silicon carbide whiskers from silicon nitride." Inorganic Materials 45, no. 7 (June 28, 2009): 758–66. http://dx.doi.org/10.1134/s0020168509070103.

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21

Wang, E. Y., X. Pan, J. P. Mansfield, T. Kennedy, and S. Hampshire. "TEM Studies of Silicon Nitride-Silicon Carbide Nanocomposites." Microscopy and Microanalysis 3, S2 (August 1997): 411–12. http://dx.doi.org/10.1017/s1431927600008941.

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Si3N4/SiC nanocomposites have been shown to exhibit excellent strength and fracture toughness compared to monolithic Si3N4 materials. Recently, the microstructure and chemistry of Si3N4-based nanocomposites fabricated by hot-pressing amorphous Si-C-N precursor powders has been investigated. In the present work, our studies on the microstructure of Si3N4/SiC nanocomposites made by hot-pressing the mixture of Si3N4 and SiC commercial powders are reported.Si3N4/SiC nanocomposites were prepared by hot-pressing at 1750 °C for 1 hour at 40 Mpa in a nitrogen atmosphere, with sintering aids of 5.5 wt% Y2O3 and 3 wt% Al2O3. The details of the processing procedure have been reported elsewhere. Two different materials were investigated in this work: specimen A consisting of 5 vol% β-SiC; and specimen B consisting of 5 vol% α-SiC. TEM specimens were prepared by conventional procedures. The microstructure and chemical composition were studied in the University of Michigan Electron Microbeam Analysis Laboratory on a JEOL 2000FX.

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22

Edwards, D. P., Barry C. Muddle, and R. H. J. Hannink. "Microstructural Characterisation of Silicon Nitride-Bonded Silicon Carbide." Key Engineering Materials 89-91 (August 1993): 417–22. http://dx.doi.org/10.4028/www.scientific.net/kem.89-91.417.

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23

Kennedy, T., Stuart Hampshire, Marc Poorteman, and F. Cambier. "Fabrication of Silicon Nitride-Silicon Carbide Nanocomposite Ceramics." Key Engineering Materials 99-100 (March 1995): 257–64. http://dx.doi.org/10.4028/www.scientific.net/kem.99-100.257.

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24

Reddy, N. Kishan. "Electrical behaviour of silicon nitride-silicon carbide composites." Journal of Materials Science Letters 9, no. 12 (December 1990): 1393–94. http://dx.doi.org/10.1007/bf00721593.

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25

Scheeper, P. R., J. A. Voorthuyzen, and P. Bergveld. "PECVD silicon nitride diaphragms for condenser microphones." Sensors and Actuators B: Chemical 4, no. 1-2 (May 1991): 79–84. http://dx.doi.org/10.1016/0925-4005(91)80180-r.

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26

Yong Zhong Hu, G. R. Yang, T. Paul Chow, and Ronald J. Gutmann. "Chemical-mechanical polishing of PECVD silicon nitride." Thin Solid Films 290-291 (December 1996): 453–55. http://dx.doi.org/10.1016/s0040-6090(96)09032-3.

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27

Liu, Ze Wen, Tian Ruo Zhang, Li Tian Liu, and Zhi Jian Li. "Realization of Silicon Nitride Template for Nanoimprint: A First Result." Solid State Phenomena 121-123 (March 2007): 669–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.669.

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A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines as RIE dry etching mask, silicon nitride template of 100nm width with steep sidewalls is successfully realized.

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28

Jones, Mark Ian, Ron Etzion, Jim Metson, You Zhou, Hideki Hyuga, Yuichi Yoshizawa, and Kiyoshi Hirao. "Reaction Bonded Silicon Nitride - Silicon Carbide and SiAlON - Silicon Carbide Refractories for Aluminium Smelting." Key Engineering Materials 403 (December 2008): 235–38. http://dx.doi.org/10.4028/www.scientific.net/kem.403.235.

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The widely used Si3N4-SiC sidewall refractories for aluminum smelting cells, and β SiAlON-SiC composites that can be potentially used for this purpose, have been produced by reaction bonding and their corrosion performance assessed in simulated aluminum electrochemical cell conditions. The formation of the Si3N4 and SiAlON phases were studied by reaction bonding of silicon powders in a nitrogen atmosphere at low temperatures to promote the formation of silicon nitride, followed by a higher heating step to produce β SiAlON composites of different composition. The corrosion performance was studied in a laboratory scale aluminum electrolysis cell where samples were exposed to both liquid attack from molten salt bath and corrosive gas attack. The corrosion resistance of the samples was shown to be dependent on the composition but more importantly on the environment during corrosion, with samples in the gas phase showing higher corrosion.

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29

Zaytsev, S. V., E. A. Doroganov, V. A. Doroganov, E. I. Evtushenko, and O. К. Sysa. "Silicon and silicon carbide-based artificial ceramic binders for nitride bonded silicon carbide refractories." NOVYE OGNEUPORY (NEW REFRACTORIES), no. 9 (October 27, 2019): 25–30. http://dx.doi.org/10.17073/1683-4518-2019-9-25-30.

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30

Sun, Wenyue, Zhiliang Huang, Changlian Chen, and Song Chen. "Preparation of Silicon Carbide Film by Composite Sintering of Silicon Nitride and Silicon Carbide." Journal of Physics: Conference Series 2390, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2390/1/012001.

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Abstract Graphite can be protected by coating it with a silicon carbide film. However, studies on the effects of different coating methods and process parameters on the thickness and bond strength of the films are not yet mature. In this paper, silicon nitride (Si3N4) and silicon carbide (SiC) are used as raw materials, and SiC films are successfully prepared on the surface of graphite substrate by composite sintering at high temperatures. The phase and microstructure of SiC films were characterized by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively, and the effect and mechanism of sintering temperature on the formation of SiC films were investigated. The results show that Si3N4 and SiC decompose under high temperatures to generate silicon vapor and carbon-silicon gas molecules, which migrate to the graphite surface to react with C and recrystallize to form a SiC film. The main crystal phase of the SiC film at high temperature is 3C-SiC, the spherical SiC grains with smooth surfaces and small size gradually grow into regular hexagonal grains, and the SiC film is denser and thicker.

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31

Kishore, R., S. N. Singh, and B. K. Das. "PECVD grown silicon nitride AR coatings on polycrystalline silicon solar cells." Solar Energy Materials and Solar Cells 26, no. 1-2 (March 1992): 27–35. http://dx.doi.org/10.1016/0927-0248(92)90123-7.

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32

Song, Yumin, Jun-Kyo Jeong, Seung-Dong Yang, Deok-Min Park, Yun-mi Kang, and Ga-Won Lee. "Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model." Materials Express 11, no. 9 (September 1, 2021): 1615–18. http://dx.doi.org/10.1166/mex.2021.2067.

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This paper analyzes data retention characteristics to determine process effects on the trap energy distribution of silicon nitride in silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. Nitride films were prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). PEVCD films embedded with silicon nanocrystals (Si-NCs) were also compared. The flat band voltage shift in the programmed device was measured at high temperatures to observe the thermal excitation of electrons from the nitride traps in retention mode. The trap energy distribution was extracted using the charge decay rates, and the experimental results showed that nitride fabricated by PECVD has a shallower trap than nitride fabricated by LPCVD. In nitride with Si-NCs, increased trap sites were observed in the range of 1.14 eV to 1.24 eV.

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33

Meziani, Samir, Abderrahmane Moussi, Linda Mahiou, and Ratiba Outemzabet. "Compositional analysis of silicon oxide/silicon nitride thin films." Materials Science-Poland 34, no. 2 (June 1, 2016): 315–21. http://dx.doi.org/10.1515/msp-2016-0057.

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AbstractHydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour deposition (PECVD) in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation) in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON) structure. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES) and energy dispersive X-ray analysis (EDX) were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

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34

Iliescu, Ciprian, Bangtao Chen, Daniel P. Poenar, and Yong Yeow Lee. "PECVD amorphous silicon carbide membranes for cell culturing." Sensors and Actuators B: Chemical 129, no. 1 (January 2008): 404–11. http://dx.doi.org/10.1016/j.snb.2007.08.043.

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35

Mitomo, Mamoru, and Günter Petzow. "Recent Progress in Silicon Nitride and Silicon Carbide Ceramics." MRS Bulletin 20, no. 2 (February 1995): 19–22. http://dx.doi.org/10.1557/s0883769400049162.

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We know from experience that ceramic materials are brittle and easily broken. This is one reason why ceramics have not been used as engineering materials. Fracture is the result of crack growth through the microstructure. It was Griffith who proposed that ceramics have intrinsic cracks which grow under applied stress. The concentration of the applied stress at the crack tip decreases the strength to a level of about 1% or less of the theoretical strength. If the crack starts to grow, strength decreases so sharply that a catastrophic fracture occurs.In spite of the brittle nature of ceramics, their application as engineering materials was proposed in the 1960s because ceramic materials made of silicon nitride or carbide have higher strength at high temperatures than metals and oxide ceramics. Non-oxide ceramics have lower thermal-expansion-coefficients than oxides, resulting in better thermal shock resistance, which is one of the most important requirements for engineering ceramics.

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36

WOO, Sang Kook, In Sub HAN, Gyeong-Geun RI, Sung-Chul PARK, Kurn CHO, and Byung-Koog JANG. "Hot-Corrosion Behavior of Silicon Nitride-Bonded Silicon Carbide." Journal of the Ceramic Society of Japan 109, no. 1265 (2001): 23–28. http://dx.doi.org/10.2109/jcersj.109.23.

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37

SATO, Tadao, Toshiharu SUGIURA, and Kazuyoshi SHIMAKAGE. "Microwave Joining of Ceramics, Silicon Nitride and Silicon Carbide." Journal of the Ceramic Society of Japan 101, no. 1172 (1993): 422–27. http://dx.doi.org/10.2109/jcersj.101.422.

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38

Baldacim, Sandro Aparecido, Claudinei dos Santos, Olivério Moreira Macedo Silva, and Cosme Roberto Moreira Silva. "Silicon Carbide Whiskers Interference on Silicon Nitride Based Composite." Materials Science Forum 591-593 (August 2008): 543–47. http://dx.doi.org/10.4028/www.scientific.net/msf.591-593.543.

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Silicon nitride based composite has been prepared, using a direct mixture process as alternative route. Silicon carbide whiskers were mixed directly to silicon nitride based powders containing yttrium and neodymium oxide as sintering aids. Uniaxial hot pressing was used to prepare sintered samples. Crystalline phases were identified using x-ray diffractometry. Intergranular phases were analyzed using Scanning Electron Microscopy. Some mechanical properties (microhardness and fracture toughness) were also evaluated. The obtained high values of fracture toughness were correlated to the activation of toughening mechanisms, such as crack bridging and crack deflection.

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39

Narushima, T., T. Goto, T. Hirai, and Y. Iguchi. "High-Temperature Oxidation of Silicon Carbide and Silicon Nitride." Materials Transactions, JIM 38, no. 10 (1997): 821–35. http://dx.doi.org/10.2320/matertrans1989.38.821.

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40

Reddy, Navuri Kishan, and Joydeb Mukerji. "Silicon Nitride-Silicon Carbide Refractories Produced by Reaction Bonding." Journal of the American Ceramic Society 74, no. 5 (May 1991): 1139–41. http://dx.doi.org/10.1111/j.1151-2916.1991.tb04356.x.

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Kishan Reddy, N., and J. Mukerji. "Preparation and characterization of silicon nitride-silicon carbide composites." Bulletin of Materials Science 13, no. 3 (June 1990): 173–78. http://dx.doi.org/10.1007/bf02744943.

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Tanaka, Hidehiko, Peter Greil, and Günter Petzow. "Sintering and strength of silicon nitride-silicon carbide composites." International Journal of High Technology Ceramics 1, no. 2 (January 1985): 107–18. http://dx.doi.org/10.1016/0267-3762(85)90002-5.

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Weinmann, M., A. Zern, and F. Aldinger. "Stoichiometric Silicon Nitride/Silicon Carbide Composites from Polymeric Precursors." Advanced Materials 13, no. 22 (November 2001): 1704–8. http://dx.doi.org/10.1002/1521-4095(200111)13:22<1704::aid-adma1704>3.0.co;2-8.

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Turan, Servet, and Kevin M. Knowles. "Interphase boundaries between hexagonal boron nitride and beta silicon nitride in silicon nitride-silicon carbide particulate composites." Journal of the European Ceramic Society 17, no. 15-16 (January 1997): 1849–54. http://dx.doi.org/10.1016/s0955-2219(97)00070-8.

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Veltri, Richard D., and Francis S. Galasso. "Chemical-Vapor-Infiltrated Silicon Nitride, Boron Nitride, and Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 73, no. 7 (July 1990): 2137–40. http://dx.doi.org/10.1111/j.1151-2916.1990.tb05288.x.

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Gatabi, Iman Rezanezhad, Derek W. Johnson, Jung Hwan Woo, Jonathan W. Anderson, Mary R. Coan, Edwin L. Piner, and Harlan Rusty Harris. "PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures." IEEE Transactions on Electron Devices 60, no. 3 (March 2013): 1082–87. http://dx.doi.org/10.1109/ted.2013.2242075.

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Ghosh, S., P. K. Dutta, and D. N. Bose. "Neural network modeling of PECVD silicon nitride films." Materials Science in Semiconductor Processing 2, no. 1 (April 1999): 1–11. http://dx.doi.org/10.1016/s1369-8001(98)00023-7.

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Kim, Byungwhan, Dong Won Kim, and Seung Soo Han. "Refraction properties of PECVD of silicon nitride film." Vacuum 72, no. 4 (January 2004): 385–92. http://dx.doi.org/10.1016/j.vacuum.2003.08.012.

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Reynes, Brigitte, and Jean Claude Bruyère. "High-density silicon nitride thin film in PECVD." Sensors and Actuators A: Physical 32, no. 1-3 (April 1992): 303–6. http://dx.doi.org/10.1016/0924-4247(92)80003-l.

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Khaliq, M. A., Q. A. Shams, W. D. Brown, and H. A. Naseem. "Physical properties of memory quality PECVD silicon nitride." Journal of Electronic Materials 17, no. 5 (September 1988): 355–59. http://dx.doi.org/10.1007/bf02652118.

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