Relevant bibliographies by topics / Peckd

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Peckd'

Author: Grafiati
Published: 28 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "Peckd"

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Abdullah, Abdullah, Intan Zahara, and Gaius Wilson. "The preliminary study on feeding behavior of male and female little egret (Egretta garzetta) in mangrove and rice field habitats based on peck frequency." Aceh Journal of Animal Science 1, no. 1 (June 15, 2016): 39–44. http://dx.doi.org/10.13170/ajas.1.1.4143.

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The objective of the present study was to study the differences in feeding behavior from peck frequency and type of diets, between male and female little egret (Egretta garzetta) in two different habitats, mangrove and rice fields of Banda Aceh, Sumatra, Indonesia. Focal animal sampling was used to study the feeding behavior of randomly selected birds from 07.00 AM to 06.00 PM in July 2015. Statistical analysis was conducted using t-test to test for differences between male and female peck frequency and habitats. For the combined data of both males and females, the average peck frequency of little egret (E. garzetta) observed in the mangrove and rice fields was 238.8 and 226.2 respectively. Male E. garzetta peck frequency observed was 240 pecks in mangrove habitat while female peck frequency was 225 pecks in rice field habitat. The results of our study showed that there is a significant difference in the peck frequency of little egrets observed in the two habitats (mangrove and rice fields) and between male and female E. garzetta.
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Hoare, Richard D. "Name change for Asturiella Blessi Hoare, 2007." Journal of Paleontology 83, no. 2 (March 2009): 319. http://dx.doi.org/10.1666/0022-3360-83.2.319.

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Luis C. Sánchez de Posado of Oviedo University was kind to point out that Asturiella blessi Hoare, 2007 is a junior homonym of Asturiella blessi Becker, 1971. It is proposed to change the name to Asturiella pecki, named for the late Raymond E. Peck of the University of Missouri.
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Forkman, Björn. "Hens Use Occlusion to Judge Depth in a Two-Dimensional Picture." Perception 27, no. 7 (July 1998): 861–67. http://dx.doi.org/10.1068/p270861.

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Hens ( Gallus gallus domesticus) were taught to peck at a touch screen. On the screen was a grid on which a square and a circle were depicted. The square and the circle were given different positions at random for each trial, but were never overlapping. The hens were rewarded for pecking at the symbol that was higher up on the grid/screen, ie at the one that to a human observer was seen as being further away. Every tenth trial was a probe trial in which the animals were presented with either the circle overlapping the square or vice versa. The hens were never rewarded during the probe trials. As mentioned, the hens had learned to peck at the symbol that appeared to be further away during the nonprobe trials. During the probe trials the hens pecked at the symbol that was occluded, ie in the absence of any other cues they used occlusion to determine which of the two symbols was further away. The results suggest that not only can nonhuman animals use image height as a cue but that they can generalise this to situations in which occlusion is the only depth cue present.
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Göth, Ann, and Heather Proctor. "Pecking preferences in hatchlings of the Australian brush-turkey, Alectura lathami (Megapodiidae): the role of food type and colour." Australian Journal of Zoology 50, no. 1 (2002): 93. http://dx.doi.org/10.1071/zo01046.

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Chicks of megapodes, including the Australian brush-turkey, Alectura lathami, live independently, without parents to show them where and what to eat. This paper represents the first investigation of how megapode chicks find and identify food. The specific questions addressed are: whether naive brush-turkey hatchlings are able to differentiate between food and objects that do not give a nutritional reward; whether they possess a preference for certain types of food; and which factors are most likely to trigger feeding in hatchlings. The three questions were approached by pairwise choice tests of two types. In Type 1, chicks were offered mealworm larvae, fruit cubes, seeds and non-nutritious objects (pebbles); in Type 2, chicks were offered beads of four different colours (red, green, blue and yellow). The median peck rate at pebbles was always significantly lower than that at mealworms, fruit or seeds. Mealworms received significantly more pecks than seeds or pebbles. Chicks showed no clear preference for any colour. All chicks also directed some pecks at ‘other items’ that appeared to display a strong contrast against the background of the box they were kept in, either in colour (e.g. dark knotholes in light brown wood) or in shape (three-dimensional, such as claws and faeces). Hatchlings seem to direct their initial pecks at objects that have certain characteristics in common, such as contrast, movement (for live prey) and reflective surfaces (for fruit or seeds). Preference for these rather general characteristics may be adaptive considering that chicks can hatch in various habitats and different months of the year, making the types of food available at hatching unpredictable.
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Cousins, Lucy. "Sharing books… Peck, Peck, Peck." Nursery World 2018, no. 13 (June 25, 2018): 21. http://dx.doi.org/10.12968/nuwa.2018.13.21.

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Gómez Pinto, Luis Ricardo. "LA POLÍTICA EN EDUCACIÓN COMO DETERMINANTE DE DESARROLLO ECONÓMICO: EL CONTEXTO HISTÓRICO SOBRE LA TENSIÓN DE MODELOS ECONÓMICOS (I)." Vniversitas, no. 128 (June 30, 2014): 121. http://dx.doi.org/10.11144/javeriana.vj128.pecd.

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La presente investigación se divide en dos partes y gira en torno siguienteinterrogante: ¿cómo la educación puede modificar las perspectivas de vida en una sociedad? La primera parte, que integra el presente artículo, se divide en dos partes esenciales. La primera propone un recuento histórico sobre el estado de cosas de la educación en Colombia. La segunda abordará el problema sobre la naturaleza de la educación. A partir de aquí, se dejarán planteadas unas conclusiones sobre el contexto histórico de la educación como política pública.
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Gómez Pinto, Luis Ricardo. "LA POLÍTICA EN EDUCACIÓN COMO DETERMINANTE DE DESARROLLO ECONÓMICO: EL CASO DE LA EDUCACIÓN DE MUJERES Y MENORES DE EDAD COMO VARIABLE PARA LA REDUCCIÓN DE LAS TASAS DE MORTALIDAD (II)." Vniversitas, no. 129 (December 30, 2014): 135. http://dx.doi.org/10.11144/javeriana.vj129.pecd.

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La primera parte de esta investigación, publicada anteriormente, planteó la tensión histórica, como marco de la evolución de la política pública en educación en Colombia. Esta segunda parte contextualizará la crisis que afrontan los modelos educativos, como resultado de la contradicción que surge cuando se habla de modelos de desarrollo y modelos decrecimiento económico, como resultado de esa tensión histórica. Para desarrollar esta idea, el primer punto parte de la tesis de Amartya Sen sobre los bienes semipúblicos como respuesta a las crisis económicas en política educativa, que se materializan en las acciones afirmativas en educación de mujeres y niños. El segundo punto analizará los resultados en inversión en políticas educativas en el mundo, como el fomento para la ruptura de las brechas de segregación y las tasas de mortalidad. En la tercera parte, se hará una descripción de los principales retos que elproyecto educativo afronta desde la prevalencia de la postura del modelo de crecimiento, fortalecido por las reformas del siglo XXI. Al final, se arrojarán unas conclusiones generales de la investigación.
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Morrison, Hope. "Peck, Peck, Peck by Lucy Cousins." Bulletin of the Center for Children's Books 67, no. 2 (2013): 81–82. http://dx.doi.org/10.1353/bcc.2013.0701.

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Subramaniam, Shrinidhi, and Elizabeth G. E. Kyonka. "Selective attention in pigeon temporal discrimination." Quarterly Journal of Experimental Psychology 72, no. 2 (January 1, 2018): 298–310. http://dx.doi.org/10.1080/17470218.2017.1360921.

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Cues can vary in how informative they are about when specific outcomes, such as food availability, will occur. This study was an experimental investigation of the functional relation between cue informativeness and temporal discrimination in a peak-interval (PI) procedure. Each session consisted of fixed-interval (FI) 2- and 4-s schedules of food and occasional, 12-s PI trials during which pecks had no programmed consequences. Across conditions, the phi (ϕ) correlation between key light color and FI schedule value was manipulated. Red and green key lights signaled the onset of either or both FI schedules. Different colors were either predictive (ϕ = 1), moderately predictive (ϕ = 0.2-0.8) or not predictive (ϕ = 0) of a specific FI schedule. This study tested the hypothesis that temporal discrimination is a function of the momentary conditional probability of food; that is, pigeons peck the most at either 2 s or 4 s when ϕ = 1 and peck at both intervals when ϕ < 1. Response distributions were bimodal Gaussian curves; distributions from red- and green-key PI trials converged when ϕ ≤ 0.6. Peak times estimated by summed Gaussian functions, averaged across conditions and pigeons, were 1.85 and 3.87 s; however, pigeons did not always maximize the momentary probability of food. When key light color was highly correlated with FI schedules (ϕ ≥ 0.6), estimates of peak times indicated that temporal discrimination accuracy was reduced at the unlikely interval, but not the likely interval. The mechanism of this reduced temporal discrimination accuracy could be interpreted as an attentional process.
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Lee, Eun-Jin, and Tae-Seon Kim. "Modeling of PECVD Oxide Film Properties Using Neural Networks." Journal of the Korean Institute of Electrical and Electronic Material Engineers 23, no. 11 (November 1, 2010): 831–36. http://dx.doi.org/10.4313/jkem.2010.23.11.831.

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Dissertations / Theses on the topic "Peckd"

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Benčíková, Barbora. "Svědci autobusovi ZaBřehem Problematika alternativního prostoru." Master's thesis, Vysoké učení technické v Brně. Fakulta výtvarných umění, 2021. http://www.nusl.cz/ntk/nusl-445693.

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The diploma thesis concerns my life project ZaBřehem and my activity in this project, which has the character of cooperation, organization, DIY, home design, web design, painting, crafts and over time also cultural organization and curation. The work goes through several components of the whole project and aims to defend the role of the artist in creating a new place that has the ambition to change the approach to people diagnosed with mental illness. At the same time, it focuses on the space specifically of one of the rooms, the layout of which the author considers her own work, as well as the method of transferring this space to the school premises for defense, which will create another site-specific installation.
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Peck, Gavin Earl. "Potential Semiochemicals of Wheat (Triticum aestivum L.) Induced by Oviposition and Feeding of the Wheat Stem Sawfly, Cephus cinctus Norton (Hymenoptera: Cephidae)." Thesis, Montana State University, 2004. http://etd.lib.montana.edu/etd/2004/peck/PeckG1204.pdf.

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Cephus cinctus Norton (Hymenoptera: Cephidae), the wheat stem sawfly, is currently the most devastating insect pest of wheat production in Montana. Currently, no effective controls are in place to check its damage and spread throughout wheat fields in the northern Great Plains. Natural biological control of sawflies occurs primarily in the form of larval parasitoids which attack the sawfly larva in the stem; however, these parasitoids are not reliably effective in controlling sawfly populations. Insect damage induces chemical changes in plants, and often these changes are part of a defensive response to the insect injury. Some of these chemical changes are apparent in the volatile chemicals produced by the plants and may include semiochemicals used by sawflies and parasitoids. Identifying the changes in volatile production could enhance the understanding of sawfly-wheat plant-parasitoid interactions and lead to more effective control measures for the wheat stem sawfly. I investigated the differences in the volatile chemicals produced by sawfly-infested and uninfested wheat plants and endeavored to determine if those differences were qualitative or quantitative. Additionally, I wanted to determine if changes in volatile production induced by the wheat stem sawfly could be mimicked by wounding coupled with the application of sawfly cuticular wax to wheat stems or by the injection of frass-treated water into the internodes of wheat stems. Volatiles of infested and uninfested wheat plants were collected and compared, with the results indicating that sawfly damage induces quantitative changes in some volatile chemicals produced by wheat. These results are discussed regarding their context within sawfly-wheat plant-parasitoid interactions and implications for better sawfly control. Volatiles from sawfly-infested, uninfested, frass-water-injected, and pin-pricked/waxtreated plants were also collected, and differences in 11 compounds selected from the results of the 1st experiment were compared. The results of this experiment found that pin-pricked/wax-treated plants came closer to mimicking the volatile production changes induced by sawfly infestation, but neither frass-water injection nor pin-pricked/cuticular wax application reliably induced the same changes in wheat volatiles that sawfly infestation did. There was, however, a definite response of the wheat to the application of the sawfly cuticular wax, and its significance is discussed.
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Bohlen, Brandon Scott. "PECVD grown DBR for microcavity OLED sensor." [Ames, Iowa : Iowa State University], 2007.

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Sanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.

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Des couches minces polycristallines d'AIN ont été réalisées en utilisant une technique CVD assistée par plasma micro-onde. Les paramètres, distance plasma - injecteur, température du substrat, polarisation RF du porte - substrat ont été optimisés. Il a été possible de contrôler l’orientation préférentielle <0001> ou <1010>, intéressantes pour des applications piézoélectriques. Les mécanismes de croissance qui ont conduit au développement des microstructures dans les différentes conditions ont été expliqués. La comparaison avec une technique PVD a permis d’enricher la discussion. Les performances piézoélectriques des couches obtenues ont été caractérisées par construction des dispositifs électroacoustiques d’onde de surface et d’onde de volume. Seules les couches orientées <0001> ont montré une réponse piézoélectrique et une vitesse acoustique adéquates. Une analyse exhaustive a été conduite pour expliquer les possibles raisons de ces comportements
Polycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as <0001> or <1010>, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for <0001> oriented films, while <1010> oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors
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Mäder, Gerrit. "Atmosphärendruck-Plasma-Beschichtungsreaktoren." Stuttgart Fraunhofer-IRB-Verl, 2008. http://d-nb.info/991762533/04.

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Ceiler, Martin Francis Jr. "The composition and properties of PECVD silicon dioxide." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/11864.

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Zhu, Mingyao. "Carbon nanosheets and carbon nanotubes by RF PECVD." W&M ScholarWorks, 2006. https://scholarworks.wm.edu/etd/1539623509.

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A planar antenna RF plasma enhanced chemical vapor deposition apparatus was built for carbon nanostructure syntheses. When operated in inductive and capacitive plasma discharging modes, two carbon nanostructures, carbon nanotube (CNT) and carbon nanosheet (CNS), were synthesized, respectively.;A nanosphere lithography method was developed and used to prepare catalyst patterns for CNT growth. Using capacitively coupled C2H2/NH 3 plasma, randomly oriented CNT were synthesized on Ni dot patterned Si substrates. Aligned CNT arrays were grown on SiO2 coated Si substrates, using both C2H2/NH3 and CH 4/H2 capacitive plasmas.;When operated in inductive coupling mode, CNS were successfully deposited on a variety of substrates without any catalyst. Carbon nanosheets are a novel two-dimensional structure, have smooth surface morphologies and atomically thin edges, and are free-standing roughly vertical to substrate surfaces. CNS have a defective graphitic crystalline structure, and contain only C and H elements. Typical CNS growth parameters are 680??C substrate temperature, 40% CH4 in H2, 900 W RF power, and 100 mTorr total gas pressure. Morphology, growth rate, and structure of CNS change with the variations in the growth parameters. Increasing substrate temperature yields a less smooth morphology, a faster growth rate, and more defects in CNS; increasing CH 4 concentration causes a faster growth rate and more defects in CNS, but only slightly changes the morphology; increasing RF power results in a more smooth morphology, a faster growth rate, and less defects in CNS; and decreasing total gas pressure induces a less smooth morphology, a faster growth rate, and more defects in CNS.;In CNS growth mechanism, a base layer forms underneath the vertical sheets; the growth of CNS is through growth species surface diffusion; the electric field near substrate surfaces promotes and keeps the vertical orientation of the CNS, and the atomic hydrogen etching keeps the CNS atomically thin.;Carbon nanosheets have large surface areas, and can stabilize metal thin films into particles 3-5 nm in diameters. For field emission testing, typical CNS have turn-on fields of 5-10 V/mum, a maximum emission current of 28 mA, an emission current density of 2 mA/mm2, and a life-time of 200 hours.
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Dominguez, Bucio Thalia. "NH3-free PECVD silicon nitride for photonic applications." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/422874/.

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Silicon Photonics has open the possibility of developing multilayer platforms based on complementary metal-oxide semiconductors compatible materials that have the potential to provide the density of integration required to fabricate complex photonic circuits. Amongst these materials, silicon nitride (SiN) has drawn attention due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfil the requirements of different linear and non-linear photonic applications covering the ultra-violet to mid-infrared wavelengths. Yet, the fabrication techniques typically used to grow SiN layers rely on processing temperatures > 400 C to obtain low propagation losses, which deem them inappropriate for multilayer integration. This thesis presents a systematic investigation that provided a comprehensive knowledge of a deposition method based on an NH3-free plasma enhanced chemical vapour deposition recipe that allows the fabrication of low-loss silicon nitride layers at temperatures < 400 C. The results of this study showed that the properties of the studied SiN layers depend mostly on their N/Si ratio, which is in fact one of the only properties that can be directly tuned with the deposition parameters. These observations provided a framework to optimise the propagation losses and optical properties of the layers in order to develop three platforms intended for specific photonic applications. The first one comprises 300nm stoichiometric SiN layers with refractive index (n) of 2 that enable the fabrication of photonic devices with propagation losses < 1 dB=cm at l = 1310nm and < 1:5 dB=cm at l = 1550 nm, which are good for applications that require efficient routing of optical signals. The second one consists on 600nm N-rich layers (n = 1.92) that allow fabricating both devices with propagation losses < 1 dB=cm at l = 1310 nm, apt for polarisation independent operation and coarse wavelength division multiplexing devices with cross-talk < 20 dB and low insertion losses. Finally, the last platform consisted of suspended Si-rich layers (n = 2.54) that permits the demonstration of photonic crystal cavities with Q factors as high as 122 000 and photonic crystal waveguides capable of operating in the slow-light regime. Hopefully, the demonstration of these platforms will stimulate the development of more complex SiN devices for multilayer routing, wavelength division multiplexing applications and non-linear integrated photonics in the future.
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Rangel, Elidiane Cipriano. "Implantação iônica em filmes finos depositados por PECVD." [s.n.], 1999. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278415.

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Orientador: Mario Antonio Bica de Moraes
Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-07-26T03:43:23Z (GMT). No. of bitstreams: 1 Rangel_ElidianeCipriano_D.pdf: 787803 bytes, checksum: 0b3afb1a1012d775c5984bbf14f79319 (MD5) Previous issue date: 1999
Resumo: Neste trabalho, investigou-se a influência da implantação iônica sobre as propriedades de filmes finos de polímero depositados a partir de plasmas de radiofrequência (40 MHz, 70 W) de dois compostos orgânicos (acetileno e benzeno) e de suas misturas com gases nobres. As irradiações foram realizadas em um implantador iônico, com íons He+ , N+ e Ar+ , à fluências entre 1018 e 1021 íons/m2 e energias de 50 a 150 keV. As propriedades estruturais e ópticas dos filmes foram analisadas por espectroscopias no infravermelho e no ultravioleta-visível, respectivamente. Através de Ressonância Paramagnética de Elétrons, foi verificado que o bombardeamento iônico produz radicais livres na estrutura polimérica. A concentração destas espécies no filme foi investigada em função da energia e da fluência do feixe iônico. Variações nas concentrações dos elementos químicos presentes nas amostras com o bombardeamento iônico foram investigadas por Espectroscopia de Retro-espalhamento Rutherford. A espessura dos filmes foi medida com um perfilômetro, e associada aos dados obtidos por RBS, permitiu a determinação da densidade dos polímeros. Medidas de dureza dos filmes foram realizadas com a técnica de nanoindentação. Usando o método de duas pontas foi determinada a resistividade elétrica dos filmes e, através da exposição a plasmas de oxigênio, foi avaliada a resistência à oxidação. A interpretação dos resultados foi baseada nos perfis de perda de energia dos íons obtidos com o programa TRIM (TRansport of Ions in Matter)
Abstract: This work reports the influence of the ion implantation on the properties of thin plasma polymer films deposited from radiofrequency (40 MHz, 70 W) plasmas of two organic compounds (acetylene and benzene) and from their mixtures with noble gases. The irradiations were performed with an ion implanter, using He+, N+ and Ar+ ions, in the fluence and energy range of 1018 to 1021 ions/m2 and 50 to 150 keV, respectively. Infrared and ultraviolet-visible spectroscopies were employed to characterize the structural and optical properties of the films, respectively. Using Electron Paramagnetic Resonance spectroscopy, the formation of free radicals in the film structure was investigated as a function of the ion beam energy and fluence. Rutherford Backscattering Spectroscopy (RBS) was employed to determine the elemental composition of the samples and its change induced by the irradiation. Thicknesses of the films were measured with a profilemeter. Combination of the RBS and film thickness data allowed the determination of the density of the films. Hardness measurements were performed using the nanoindentation technique and the electrical resistivity of the films was determined by the two-point probe. The resistance to oxidation was determined from the etching rate of the polymers in an oxygen plasma. Interpretation of various experimental results were based on the implanted ion and energy loss simulation profiles, obtained with the TRansport of Ions in Matter ¿ TRIM code
Doutorado
Física
Doutor em Ciências
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Wu, Lingling. "Surface processing by RFI PECVD and RFI PSII." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623997.

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An RFI plasma enhanced chemical vapor deposition (PECVD) system and a large-scale RF plasma source immersion ion implantation (PSII) system were designed and built to study two forms of 3-D surface processing, PECVD and PSII. Using the RFI PECVD system, Ti-6Al-4V substrates were coated with diamond-like carbon films with excellent tribological and optical properties. as an innovation, variable angle spectroscopic ellipsometry (VASE) was successfully applied for non-destructive, 3-D, large-area tribological coatings quality investigation.;Based on the experience with the RFI PECVD system, a large-scale RFICP source was designed and built for the PSIL Langmuir probe and optical emission spectroscopy studies indicated that the RFI source produced stable, uniform, and clean plasma. MAGIC code was for the first time used to model PSII process, addressing different target geometries and boundaries, materials, plasma parameters, illustrated sheath formation and evolution, field distribution, ion and electron trajectories, ion incident angles, and dose distributions, which are critical for PSII design and understanding.;The RF PSII system was developed into a versatile large-area, uniform, 3-D surface processing apparatus, capable of PSII, PVD, PECVD, and in situ surface cleaning and interface properties modification, for multilayer, multi-step, and high performance surface engineering. Using the RFI PSII system, for the first time, PSII was studied as a mask-based surface layer conversion technique, for pattern writing by implantation as an alternative to current deposition-based and ink-based direct write technologies. It operates at low substrate temperature, keeps the original surface finish and dimensions, and avoids adhesion problem. A different operating mode of the RF source was discovered to perform biased sputtering of high purity quartz, which turned the RFI PSII system into a novel integrated RF PSII/PVD system for large-area, uniform, nitrogen-doped, and hydrogen-free SiO2 films deposition at low substrate temperatures. Nitrogen-doped SiO2 films with excellent optical properties were deposited on semiconductor, metal, and polymer substrates with excellent adhesion. Ellipsometry was used again for non-destructive SiO2 coatings investigation. FEL test electrodes processed by PSII/PVD showed suppressed field emission. A group of transition metals and an FEL test electrode were also implanted by nitrogen using the PSII mode and analyzed.
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Books on the topic "Peckd"

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Cousins, Lucy. Peck, peck, peck. Somerville, Massachusetts: Candlewick Press, 2013.

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Peck, peck, peck. Vero Beach, FL: Rourke Pub., 2008.

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Peck, peck, peck. London: Walker Books, 2014.

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Peck, peck, peck. Vero Beach, FL: Rourke Pub., 2009.

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Greenwood, Marlene. Peck, peck. Harrogate: Jelly and Bean Ltd, 2007.

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Markoviḱ, Darko. Pecko živurkanje. Skopje: Kultura, 2003.

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Peck-a -peck: A phonics reader. New York, NY: Book Shop, Inc., 2009.

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Sickels, Amy. Richard Peck. New York: Chelsea House, 2009.

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Hattie Peck. Woodbridge, Suffolk: Top That, 2014.

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Hattie Peck. New York, NY: Skyhorse Publishing Company, Incorporated, 2016.

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Book chapters on the topic "Peckd"

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Iwaniszewski, Stanisław. "Pecked Cross-Circles." In Handbook of Archaeoastronomy and Ethnoastronomy, 737–42. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-6141-8_57.

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Giclas, Henry L. "Todd, David Peck." In Biographical Encyclopedia of Astronomers, 2163. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-9917-7_1387.

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Vesel, Živa, Leonardo Gariboldi, Steven L. Renshaw, Saori Ihara, İhsan Fazlıoğlu, Voula Saridakis, Michael Fosmire, et al. "Todd, David Peck." In The Biographical Encyclopedia of Astronomers, 1143–44. New York, NY: Springer New York, 2007. http://dx.doi.org/10.1007/978-0-387-30400-7_1387.

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Frank, J. Howard, J. Howard Frank, Michael C. Thomas, Allan A. Yousten, F. William Howard, Robin M. Giblin-davis, John B. Heppner, et al. "Peck, William Dandridge." In Encyclopedia of Entomology, 2775–76. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-6359-6_2822.

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Won, Tae Kyung, Soo Young Choi, and John M. White. "Thin-Film PECVD (AKT)." In Flat Panel Display Manufacturing, 241–72. Chichester, UK: John Wiley & Sons Ltd, 2018. http://dx.doi.org/10.1002/9781119161387.ch12_01.

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Kikuchi, Masashi. "Thin-Film PECVD (Ulvac)." In Flat Panel Display Manufacturing, 273–86. Chichester, UK: John Wiley & Sons Ltd, 2018. http://dx.doi.org/10.1002/9781119161387.ch12_02.

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Droes, Stevenx R., Toivo T. Kodas, and Mark J. Hampden-Smith. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Carbide, Nitride and Boride Materials Synthesis and Processing, 579–603. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-009-0071-4_23.

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Flamm, Daniel L. "Plasma Chemistry, Basic Processes, and PECVD." In Plasma Processing of Semiconductors, 23–59. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_2.

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Kozak, A. O., V. I. Ivashchenko, O. K. Porada, L. A. Ivashchenko, O. O. Sytikov, V. S. Manzhara, and T. V. Tomila. "Multilayer PECVD Si–C–N Films." In Springer Proceedings in Physics, 397–404. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-1742-6_39.

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, Marc Madou, Chunlei Wang, Parag B. Deotare, Marko Loncar, et al. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Encyclopedia of Nanotechnology, 2126. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100662.

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Conference papers on the topic "Peckd"

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Cao, Zhiqiang, Tong-Yi Zhang, and Xin Zhang. "A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-80288.

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Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young’s modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. The results showed that the as-deposited PECVD SiOx films had a residual stress of −155±17 MPa and a Young’s modulus of 74.8±3.3 GPa.
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White, Richard L., Bing K. Yen, Jan-Ulrich Thiele, Hans-Herman Schneider, James H. Rogers, and Bernd Jacoby. "Comparison of Energetic Carbon Deposition Processes for Use As Ultra-Thin Disk Overcoats." In STLE/ASME 2001 International Joint Tribology Conference. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/trib-nano2001-109.

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Abstract Three different processes, Plasma Enhanced CVD (PECVD), Ion Beam (IB), and Cathodic Arc (CA) have been used to deposit highly energetic carbon films in the 2–10 nm thickness range in commercial, high throughput disk manufacturing tools. The deposition conditions used are typical of those required for disk manufacturing. Raman spectroscopy, I-V measurements, nanoindentation, and AFM based scratch testing have been used to characterize the structural, electrical, and mechanical properties of the films. The measured maximum hardness for the PECVD and IBD films are 28 and 25 GPa, respectively, and found to be influenced by the hardness of the softer substrates for the 70–120nm films available for measurement. The scratch resistance of the CAC films is ∼2× the scratch resistance of the IBD films and 25% greater than the PECVD films. Addition of nitrogen to the films produced by both the PECVD and IB techniques reduces the hardness of the films. Both the Raman and I-V data suggest increasing concentrations of sp2 bonding result from these nitrogen additions.
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Krzhizhanovskaya, V. V., M. A. Zatevakhin, A. A. Ignatiev, Yu E. Gorbachev, W. J. Goedheer, and P. M. A. Sloot. "A 3D Virtual Reactor for Simulation of Silicon-Based Film Production." In ASME/JSME 2004 Pressure Vessels and Piping Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/pvp2004-3120.

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In this paper we introduce a Grid-based Virtual Reactor, a problem-solving environment that supports detailed numerical study of industrial thin film production in Plasma Enhanced Chemical Vapor Deposition (PECVD) reactors. We describe the physics and chemistry underpinning the deposition process, the numerical approach to simulate these processes on advanced computer architectures as well as the associated software environment supporting computational experiments. In the developed 3D model we took into account all relevant chemical kinetics, plasma physics and transport processes that occur in PECVD reactors. We built an efficient problem-solving environment for scientists studying PECVD processes and end-users working in chemical industry and validated the resulting Virtual Reactor against real experiments.
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Pandraud, G., A. Barbosa Neira, P. M. Sarro, and E. Margallo-Balba. "PECVD SiC-SiO." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5690912.

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Wang, Yu, Hui Guo, Haixia Zhang, Guobing Zhang, and Zhihong Li. "Fabrication and Test of PECVD SiC Resonator." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21240.

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This paper utilized SiC thin film deposited by low temperature PECVD to fabricate resonator at 300°C, following by annealing and doping to release its stress and improve its electronics contact. The test results show that, the frequency of PECVD SiC resonator is among 60–150KHz. The Q value of resonator was estimated according to the tested frequency-amplitude curve, is about 10±3. The ability of SiC resonators in erosion environment was also studied, under 5mins etching in KOH solution, the whole structure are kept very well. Therefore, this kind PECVD SiC resonator not only can be used widely in harsh environment, such as, high temperature, erosion and high pressure, but also can integrated with CMOS process, release the integration manufacturing of circuit and devices in micro-scale.
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Yao, Da-Jeng, Wei-Chih Lai, and Heng-Chieh Chien. "Temperature Dependence of Thermal Conductivity for Silicon Dioxide." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52052.

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Heat transport of dielectric thin films in 30–300 nm thick is characterized in the temperature range of 74–300 K using the 3ω method, which is a simple method to measure the cross-plane thermal conductivity of dielectric thin films. Dielectric film samples of two kinds, deposited on Si substrates using plasma enhanced chemical vapor deposition (PECVD) and grown by thermal oxidation, were measured. In order to broaden the application of 3ω method, 3ω method system was combined with cryogenics system to measure temperature dependent material property. SiO2 films, prepared by thermal oxidation and PECVD, have been put and measured in the cryogenics system. The apparent thermal conductivity, intrinsic thermal conductivity, and interface resistance have been analyzed in different temperature. For this experiment, we discovered the thermal conductivity of PECVD SiO2 films is smaller than the thermal conductivity of SiO2 grown by thermal oxidation, because the porosity of thermal SiO2 is smaller than PECVD SiO2. The apparent thermal conductivity of SiO2 film decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. For SiO2 films, the thermal conductivity decreases if the temperature decreases, because the mean free path of heater carriers increases.
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Schade, Christoph, Alex Phan, Kevin Joslin, Phuong Truong, and Frank Talke. "Dissolution Behavior of Silicon Nitride Thin Films in a Simulated Ocular Environment." In ASME 2020 29th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/isps2020-1946.

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Abstract The time dependent dissolution of silicon nitride is studied in a simulated eye environment (controlled saline solution) as a function of temperature and pressure. Silicon nitride films manufactured by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD), respectively, were tested. The results revealed that both film types showed evidence of dissolution i.e., the films dissolved in the saline solution over time. At 37°C, PECVD and LPCVD silicon nitride membranes dissolved at a rate of 1.3 nm/day and 0.3 nm/day, respectively. It was found that at 23°C, the dissolution rate of the PECVD samples reduced to just 0.2 nm/day. Dissolution was not observed in samples tested in deionized water at 37°C. Titanium oxide layers (TiO2) were tested as protective layers to stop the dissolution. The results are important for implantable MEMS devices where silicon nitride is used as a functional membrane or as a protective layer.
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Noree, Sabah, Ferhat Bozduman, I. Umran Koc, Ali Gulec, Mohammed Ismael, Yakup Durmaz, and Lutfi Oksuz. "Graphene synthesis by PECVD." In 2015 IEEE International Conference on Plasma Sciences (ICOPS). IEEE, 2015. http://dx.doi.org/10.1109/plasma.2015.7179692.

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Ibbotson, D. E., J. J. Hsieh, D. L. Flamm, and J. A. Mucha. "Oxide Deposition By PECVD." In OPTCON '88 Conferences--Applications of Optical Engineering, edited by James E. Griffiths. SPIE, 1989. http://dx.doi.org/10.1117/12.951024.

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Denoirjean, A., A. Grimaud, P. Fauchais, P. Tristant, C. Tixier, and J. Desmaison. "Splat Formation First Step of Multitechnique Deposition Plasma Spraying and Microwave Plasma Enhanced CVD." In ITSC 1998, edited by Christian Coddet. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.itsc1998p1369.

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Abstract In order to achieve thick coatings on thin substrates (e &lt; 1 mm) which grit blasting is difficult and can even be impossible, a deposit achieved by using two successive techniques might be the solution. For example it could consist in depositing first by plasma enhanced CVD (PECVD) a thin alumina coating (~ 2 tm thick) and then by plasma spraying a thick (300 - 500 µm) alumina coating. To study such a possibility a systematic study of splats morphology on various substrates was performed. The substrates were either plasma sprayed (- 0.8 - 0.9 mm thick) or PECVD deposited (2 pm thick on mirror polished 304L stainless steel). The plasma sprayed substrates were annealed or not in order to get a columnar, a granular or y columnar structures and then polished (Ra -- 0.4 pm) white PECVD coatings exhibiting an Ra - 6 nm and a columnar amorphous structure, were sprayed as deposited. Splat studies show the drastic influence of alumina substrates crystalline structure and entrapped gas release on splat formation. For plasma sprayed coatings disk shaped splats with an excellent adhesion of corresponding coatings (up to 40 MPa) were obtained on hot (673-873 K) y alumina while on a alumina splat shape and morphology were irregular and resulting coatings adhesion very poor (below 3 MPa). For PECVD substrate gas release upon impact of molten particles modified drastically the wettability and their thermal contact with substrate resulting in very porous splats or in splats were most of alumina is in the splat rim.
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Reports on the topic "Peckd"

1

Walter White Tail Feather. Fort Peck Reservations Wind Project. Office of Scientific and Technical Information (OSTI), August 2007. http://dx.doi.org/10.2172/915088.

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McMechan, M. E., and G. B. Leech. Geology, Mount Peck, British Columbia. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2011. http://dx.doi.org/10.4095/288765.

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Monson, Lawrence M. Fort Peck Reservation Assessment of Hydrocarbon Seepage. Office of Scientific and Technical Information (OSTI), July 2001. http://dx.doi.org/10.2172/783391.

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Cahill, James M., W. Y. Pong, and D. L. Weyermann. Pecky rot in incense-cedar: evaluation of five scaling methods. Portland, OR: U.S. Department of Agriculture, Forest Service, Pacific Northwest Research Station, 1987. http://dx.doi.org/10.2737/pnw-rn-457.

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CORPS OF ENGINEERS OMAHA NE. Fort Peck Dam: 75 Years of Service, 1937-2012. Fort Belvoir, VA: Defense Technical Information Center, January 2012. http://dx.doi.org/10.21236/ada605171.

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Washington, Derwin. Reactive Ion Etching of PECVD Silicon Dioxide (SiO2) Layer for MEMS Application. Fort Belvoir, VA: Defense Technical Information Center, July 2004. http://dx.doi.org/10.21236/ada425806.

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Rodriguez, R. E., and C. A. Johnson. Radiological verification survey results at 14 Peck Ave., Pequannock, New Jersey (PJ001V). Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/88627.

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Rodriguez, R. E., and C. A. Johnson. Radiological verification survey results at 15 Peck Ave., Pequannock, New Jersey (PJ005V). Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/87006.

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Rodriguez, R. E., and C. A. Johnson. Radiological verification survey results at 17 Peck Ave., Pequannock, New Jersey (PJ006V). Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/87010.

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Rodriguez, R. E., and C. A. Johnson. Radiological verification survey results as 13 Peck Ave., Pequannock, New Jersey (PJ004V). Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/87011.

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