Relevant bibliographies by topics / Passivation

Academic literature on the topic 'Passivation'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 July 2024

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Passivation.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Passivation"

1

Rong, Hua, Yogesh K. Sharma, and Philip A. Mawby. "Combined N2O and Phosphorus Passivations for the 4H-SiC/SiO2 Interface with Oxide Grown at 1400°C." Materials Science Forum 897 (May 2017): 344–47. http://dx.doi.org/10.4028/www.scientific.net/msf.897.344.

Full text
Abstract:
Phosphorus (P) passivation is more effective than N2O passivation in improving the 4H-SiC/ SiO2 interface by reducing the number of traps at the 4H-SiC/SiO2 interface. This paper investigated the effect of combined N2O and phosphorus POA on the 4H-SiC/SiO2 interface with oxides grown at 1400°C and used in the fabrication of MOS capacitors and FETs. These fabricated devices are also compared with the ones which have been N2O and P passivations only. Results demonstrated that the phosphorus passivation technique provides the highest peak field-effect mobility for 4H-SiC MOSFETs (60 cm2/V.s), which is about 5 times higher than the value obtained for devices with N2O annealing. The combined N2O and phosphorus passivation technique, however, has shown a slight decrease in the peak field effect mobility value compared to the phosphorus passivation technique, but it is still much higher than the N2O passivation technique (12 cm2/V.s).
APA, Harvard, Vancouver, ISO, and other styles
2

Daves, Walter, A. Krauss, Martin Le-Huu, S. Kronmüller, Volker Haeublein, Anton J. Bauer, and Lothar Frey. "Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications." Materials Science Forum 679-680 (March 2011): 449–52. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.449.

Full text
Abstract:
We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations comprised a 150 nm sputtered Pt or a 150 nm e-beam evaporated PtRh layer on Ti/TiN underlayers, respectively. The passivation coatings consisted of amorphous PECVD SiOx, of amorphous stress-reduced PECVD SiNy, and of a SiOx/ SiNy stack. For samples with SiOx and SiOx/ SiNy passivation layers the electrical properties changed after a short high temperature anneal at 600 °C but then remained stable during further annealing. This was attributed to the formation of PtTi alloys, which stabilized the metallization stack. In samples with SiNy passivation a significant Pt out-diffusion into the passivation layer was observed. This led to a degradation of the electrical and mechanical properties. The best performance was achieved with Pt-based metallizations and SiOx or SiOx/SiNy passivations.
APA, Harvard, Vancouver, ISO, and other styles
3

Tyagi, Pawan. "GaAs(100) Surface Passivation with Sulfide and Fluoride Ions." MRS Advances 2, no. 51 (2017): 2915–20. http://dx.doi.org/10.1557/adv.2017.380.

Full text
Abstract:
ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.
APA, Harvard, Vancouver, ISO, and other styles
4

Guo, Xiao Fei, Yue Wang, and Hua Sun. "Comparative Research on Properties of Trivalent and Hexavalent Passive Film on Galvanized Steel." Advanced Materials Research 396-398 (November 2011): 1760–63. http://dx.doi.org/10.4028/www.scientific.net/amr.396-398.1760.

Full text
Abstract:
The anticorrosive performances of various kinds of conversion films including hexavalent and trivalent chromium passivation were studied on galvanized steel. The hexavalent and trivalent passivations showed similar protection tendency in the corrosion tests, but the hexavalent passivation had slightly better results than trivalent one. It was found the difference in the corrosion resistance given by the two films was attributed to the difference of their morphology and thickness by SEM test, for the hexavalent film was denser, smoother and thicker. Using EDS and XRD experiments, it was found that the hexavalent and trivalent passive films had the same chemical element but different components. Considering the environmental protection, the trivalent passivation will have better developing prospect in the near future.
APA, Harvard, Vancouver, ISO, and other styles
5

Gaikwad, Pooja Vinod, Nazifa Rahman, Rooshi Parikh, Jalen Crespo, Zachary Cohen, and Ryan M. Williams. "Detection of the Inflammatory Cytokine IL-6 in Complex Human Serum Samples Via Rational Nanotube Surface Passivation Screening." ECS Meeting Abstracts MA2023-01, no. 9 (August 28, 2023): 1124. http://dx.doi.org/10.1149/ma2023-0191124mtgabs.

Full text
Abstract:
In recent years, biosensors have emerged as a tool with strong potential in medical diagnostics. Single-walled carbon nanotube (SWCNT) based optical nanosensors have notably garnered interest due to the unique characteristics of their near-infrared fluorescence emission, including tissue transparency, photostability, and various chiralities with discrete absorption and fluorescence emission bands. The optoelectronic properties of SWCNT are sensitive to the surrounding environment, which makes them suitable for highly selective biosensing. Single-stranded (ss) DNA-wrapped SWCNTs have been reported as optical nanosensors for cancers and metabolic diseases. However, given the complexity of the human protein environment, non-specific interactions occur between SWCNT-based nanosensors and proteins. This inevitably leads to compromised selectivity of SWCNT-based nanosensors unless strategies for prevention are developed and employed. Non-covalent passivation of the ssDNA-SWCNT surface is reported as an excellent strategy to improve nanosensor selectivity in complex biological settings without causing irreversible changes to the optical properties of SWCNTs. Emerging studies have explored and successfully shown passivation using proteins and phospholipids. However, a systematic comparative study of passivating agents has not been done. In this work, we explore and compare the efficacy of select proteins, polymers, and surfactants as passivating agents. We, therefore, sought to evaluate various potential SWCNT surface passivation agents among broad classes of biomolecules and biomaterials. In the category of protein, Bovine serum albumin, dry-fat milk powder, and casein were selected due to their wide application to improve immunoassay selectivity. In the class of polymers, we selected 1 anionic and 2 cationic polymers, namely, polyethylene glycol, poly-ethylene imine, and poly-l-lysine. From surfactants, 2 phospholipids and 1 anionic surfactant: ammonium salt of 1,2-dipalmitoyl-sn-glycero-3-phosphoethanolamine-N-[methoxy(polyethylene glycol)-2000] (16:0 PE2000PEG); 1,2-distearoyl-sn-glycero-3-phosphoethanolamine-N-[amino(polyethylene glycol)-2000] (DSPE PEG phospholipids), and sodium dodecylbenzene sulfonate (SDBS) were selected. We analyzed the ability of all passivation agents to screen the non-specific interactions of ssDNA- SWCNTs in the presence of fetal bovine serum using fluorescence spectroscopy. The non-specific interactions between ssDNA-SWCNTs and proteins lead to a reorientation of the dipole moments and charge transfer in the corona phase around ssDNA-SWCNTs, leading to modulation in the center wavelength of the fluorescence as well as absorption peaks. We hence hypothesized that smaller changes in the center wavelength of the fluorescence peaks of passivated ssDNA-SWCNTs in presence of serum, lead to higher screening effect of the passivation agent towards non-specific interactions. We found that the most successful candidates were poly-L-lysine, polyethylene imine, dry-fat milk powder, and casein, in that order. Moreover, the ability to screen the interference was retained over a period of at least 3 hours. We further experimented with the four different mass ratios of passivating agents to ssDNA-SWCNTs and found that the mass ratio 50:1 for passivating agents: ss-DNA SWCNTs was most optimal. We confirmed the strength of passivation using absorption spectroscopy. We hypothesized that stronger surface saturation of the SWCNT-TAT6 is by a passivating agent in buffer conditions leads to a larger shift in the absorption peaks. We found that for the above successful passivation agents, the order of passivation strength followed the same trend as the screening abilities of the successful passivating agents, supporting this mechanistic hypothesis. Then, we evaluated an antibody-conjugated ssDNA-SWCNT nanosensor for the pro-inflammatory cytokine IL-6 with our successful passivation agents. We assessed the ability of the passivation agents to confer selective detection of IL-6 detection in clinical serum samples from patients with atherosclerosis and rheumatoid arthritis, both anticipated to have high IL-6 levels. Samples were compared to healthy human serum sample controls. We validated SWCNT fluorescence response with traditional immunoassays (ELISA). We expect this study to provide rational strategies to screen interferences from non-specific interactions and improve the selectivity of the SWCNT-based optical nanosensors for in vivo applications.
APA, Harvard, Vancouver, ISO, and other styles
6

Jha, Rajesh Kumar, Prashant Singh, Manish Goswami, and B. R. Singh. "Impact of HfO2 as a Passivation Layer in the Solar Cell Efficiency Enhancement in Passivated Emitter Rear Cell Type." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3718–23. http://dx.doi.org/10.1166/jnn.2020.17510.

Full text
Abstract:
We report the simulation of high-efficiency c-silicon Passivated Emitter Rear Contact (PERC) type solar cell structure with rear side passivated with HfO2 as a passivating material. Variation in the half length of pyramid has been carried out to investigate its effect on the solar cell electrical characteristics such as fill factor (FF), open circuit voltage (Voc) and efficiency. Aluminum back Surface Field (Al-BSF) and PERC type solar cell with Al2O3 passivation layer structures were also modeled for comparison. Effect of variation in passivation layer (HfO2) thickness (10 and 15 nm) and permittivity (k = 14 and 25) on the solar cell electrical characteristics has been investigated. Result shows the efficiency improvement in the PERC solar cell with HfO2 passivation layer by 0.5941% and 0.983% as compared to the Al-BSF and PERC with Al2O3 passivation layer at 8 μm pyramid half length. Increased series resistance and reduced FF has been observed with the incorporation of passivation layer at the solar cell structure. Negligible effect of passivation layer thickness has been observed on the solar cell electrical parameters whereas the permittivity value does have significant effect.
APA, Harvard, Vancouver, ISO, and other styles
7

Liu, Xiaoliang, Qian Li, Yan Zhang, Yongbin Yang, Bin Xu, and Tao Jiang. "Formation Process of the Passivating Products from Arsenopyrite Bioleaching by Acidithiobacillus ferrooxidans in 9K Culture Medium." Metals 9, no. 12 (December 6, 2019): 1320. http://dx.doi.org/10.3390/met9121320.

Full text
Abstract:
Arsenopyrite is a common sulphide mineral occurring in deposits of gold ore that makes the extraction of gold difficult and, thus, pre-treatment is necessary prior to gold leaching. Bioleaching pre-treatment of arsenopyrite has drawn significant attention owing to its environmental friendliness, low cost and simple operation. A critical impedance of bioleaching to its large-scale industrial application is the slow leaching kinetics. Various passivating products on the surface of arsenopyrite have been found to limit the bioleaching process. This paper reports results from an in-depth investigation into the formation process of passivating products from arsenopyrite bioleaching by Acidithiobacillus ferrooxidans in 9K culture medium including bioleaching experiments and physicochemical analyses of the materials as well as thermodynamic analyses of the leaching system. The results of phase transformation and morphological change of the solid products suggest that the passivation occurring in the bioleaching of arsenopyrite is largely attributed to an initially formed passivating film consisting mainly of realgar (As2S2), orpiment (As2S3) and elemental sulphur (S0) on the arsenopyrite surface. Based on the results, the paper also proposes possible passivation mechanisms to allow for a better understanding on the passivation behaviour of the bioleaching of arsenopyrite.
APA, Harvard, Vancouver, ISO, and other styles
8

Sioncke, Sonja, Claudia Fleischmann, Dennis Lin, Evi Vrancken, Matty Caymax, Marc Meuris, Kristiaan Temst, et al. "S-Passivation of the Ge Gate Stack Using (NH4)2S." Solid State Phenomena 187 (April 2012): 23–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.23.

Full text
Abstract:
The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.
APA, Harvard, Vancouver, ISO, and other styles
9

Jones, K. M., M. M. Al-Jassim, and B. L. Soport. "TEM investigation of hydrogen-implanted polycrystalline Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 868–69. http://dx.doi.org/10.1017/s0424820100088658.

Full text
Abstract:
Hydrogen implantation for passivating grain boundaries and dislocations in polycrystalline silicon solar cells was studied by TEM and HREM. Back-surface passivation is being investigated because studies have shown that front-side passivation causes serious surface damage with resultant surface recombination velocities as high as 7 x 107 cm/sec. Front-side hydrogenation also restricts solar cell fabrication processes. Since the passivation of defects must occur within the entire volume of the cell, particular emphasis was placed on the depth distribution of hydrogen. The hydrogen implantation was carried out In a Kaufman ion beam system using a beam energy of 0.5-1.5 keV and a beam current of 55 mA for 15 minutes.
APA, Harvard, Vancouver, ISO, and other styles
10

Chowdhury, Sanchari, Muhammad Quddammah Khokhar, Duy Phong Pham, and Junsin Yi. "Al2O3/MoOx Hole-Selective Passivating Contact for Silicon Heterojunction Solar Cell." ECS Journal of Solid State Science and Technology 11, no. 1 (January 1, 2022): 015004. http://dx.doi.org/10.1149/2162-8777/ac4d83.

Full text
Abstract:
Carrier selective contact (CSC) layers have been extensively studied to realize high passivation effect in solar cells. Excellent passivation properties of Al2O3 and a-Si:H(i) as passivating interlayers between the hole-selective contact (HSC) MoOx and p-type c-Si wafer surface are reported herein. MoOx single layer exhibits a high work function value (≥5.0 eV), which can cause sufficient band bending in the band structure for HSC. An Al2O3/MoOx contact exhibits a significantly higher transmittance and surface passivation compared with that of an a-Si:H(i)/MoOx contact. The passivation results for Al2O3/MoOx contact are a carrier lifetime (τeff) of 830 μs and implied open circuit voltage (iVOC) of 726 mV, whereas for conventional a-Si:H(i)/MoOx contact, the corresponding values are 770 μs and 716 mV. Delicate thickness optimization was performed using experimental and simulation results for Al2O3/MoOx and a-Si:H(i)/MoOx stacks to achieve high performance in p-type c-Si solar cells.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Passivation"

1

Gheorghita, Ligia. "Passivation kinetics at semiconductor interfaces." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape7/PQDD_0016/NQ46347.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Davenport, Alison Jean. "Passivation of amorphous and polycrystalline metals." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328717.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.

Full text
Abstract:
Passivation of silicon surfaces remains a critical factor in achieving high conversion efficiency in solar cells, particularly in future generations of rear contact cells -the best performing cell geometry to date. In this thesis, passivation is characterised as either intrinsic or extrinsic, depending on the origin of the chemical and field effect passivation components in dielectric layers. Extrinsic passivation, obtained after film deposition or growth, has been shown to improve significantly the passivation quality of dielectric films. Record passivation has been achieved leading to surface recombination velocities below 1.5 cm/s for 1 Ωcm n-type silicon covered with thermal oxide, and 0.15 cm/s in the same material covered with a thermal SiO2/PECVD SiNx double layer. Extrinsic field effect passivation, achieved by means of corona charge and/or ionic species, has been shown to decrease by 3 to 10 times the amount of carrier recombination at a silicon surface. A new parametrisation of interface charge, and electron and hole recombination velocities in a Shockley-Read-Hall extended formalism has been used to model accurately silicon surface recombination without the need to incorporate a term relating to space-charge or surface damage recombination. Such a term is unrealistic in the case of an oxide/silicon interface. A new method to produce extrinsic field effect passivation has been developed in which charge is introduced into dielectric films at high temperature and then permanently quenched in place by cooling to room temperature. This approach was investigated using charge due to one or more of the following species: ions produced by corona discharge, Na+, K+, Cs+, Mg2+ and Ca2+. It was implemented on both single SiO2 and double SiO2/SiNx dielectric layers which were then measured for periods of up to two years. The decay of the passivation was very slow and time constants of the order of 10,000 days were inferred for two systems: 1) corona-charge-embedded into oxide grown on textured FZ-Si, and 2) potassium ions driven into an oxide on planar FZ-Si. The extrinsic field effect passivation methods developed in this work allow more flexibility in the combined optimisation of the optical properties and the chemical passivation properties of dielectric films on semiconductors. Increases in cell Voc, Jsc and η parameters have been observed in simulations and obtained experimentally when extrinsic field effect passivation is applied to the front surface of silicon solar cells. The extrinsic passivation reported here thus represents a major advancement in controlled and stable passivation of silicon surfaces, and shows great potential as a scalable and cost effective passivation technology for solar cells.
APA, Harvard, Vancouver, ISO, and other styles
4

Chatterjee, Basab. "Hydrogen passivation of heteroepitaxial indium phosphide /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487947908403973.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Jagannathan, Hemanth. "Semiconductor nanowires : synthesis, passivation, and devices /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Adhikari, Hemant. "Growth and passivation of germanium nanowires /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Fehrman, Stephen A. "Passivation of polymer light-emitting diodes." Click here to view, 2009. http://digitalcommons.calpoly.edu/eesp/19/.

Full text
Abstract:
Thesis (B.S.)--California Polytechnic State University, 2009.
Project advisor: David Braun. Title from PDF title page; viewed on Jan. 28, 2010. Includes bibliographical references. Also available on microfiche.
APA, Harvard, Vancouver, ISO, and other styles
8

Lenglet, Sergueï. "Bisimulations dans les calculs avec passivation." Phd thesis, Grenoble, 2010. http://www.theses.fr/2010GRENM002.

Full text
Abstract:
Les calculs de processus représentent les systèmes concurrents par des processus qui s'exécutent en parallèle et s'échangent des messages. Les calculs avec passivation dispose d'un opérateur spécial qui permet de stopper un processus en cours d'exécution. Le processus suspendu peut ensuite être modifié ou transmis avant d'être réactivé. La passivation rend possible la modélisation de défaillances et d'opérations de reconfiguration dynamique. Nous nous intéressons aux équivalences comportementales dans ces calculs. Le comportement d'un processus est donné par un système de transitions étiquetées, qui exhibe les interactions d'un processus avec son environnement. Des relations, appelées bisimilarités, permettent ensuite d'identifier les processus qui ont le même comportement en comparant leurs interactions. Les bisimilarités définies jusqu'ici dans les calculs avec passivation restent trop complexes pour être utilisée en pratique. En outre il n'existe pas de bisimilarité correcte et complète dans le cas faible, c'est-à-dire lorsque les actions internes aux processus ne sont pas observables. Nous étudions ces deux problèmes dans cette thèse. Nous montrons d'abord qu'il est possible de définir une bisimilarité simple à manipuler pour un calcul avec passivation mais sans restriction. En revanche, nous donnons des contre-exemples qui laissent penser qu'il n'est pas possible de faire de même dans les calculs avec passivation et restriction. Nous définissons également un nouveau type de système de transitions étiquetées, qui permet de caractériser la congruence barbue dans le cas faible. Nous appliquons notre technique à différents calculs dont le Kell
In process calculi, concurrent and interacting systems are modelled by processes that run in parallel and exchange messages. Calculi with passivation features a special operator that allows to stop a process at any time of its execution; the suspended process may then be modified or forwarded before being reactivated. Passivation is useful to model failures or dynamic reconfiguration phenomena. We are interested in behavioral equivalences in these calculi. The behavior of a process is given by a labelled transition system, which exhibits the interactions of a process with its environment. Bisimilarities then relate processes by comparing their interactions. Until now, the bisimilarities defined in calculi with passivation are too complex to be used in practice. Furthermore, there is no characterization of barbed congruence in the weak case, where internal actions from processes are not observable. We deal with this two issues in this document. We first define an easy to use bisimilarity in a calculus with passivation but without restriction. However, we give counter-examples which suggest that it is not possible to to do so in calculi with passivation and restriction. We also define a new kind of labelled transition system, which allows the characterization of the barbed congruence even in the weak case. We apply our technique to different calculi, including the Kell
APA, Harvard, Vancouver, ISO, and other styles
9

Lenglet, Sergueï. "Bisimulations dans les calculs avec passivation." Phd thesis, Grenoble, 2010. http://tel.archives-ouvertes.fr/tel-00447857.

Full text
Abstract:
Les calculs de processus représentent les systèmes concurrents par des processus qui s'exécutent en parallèle et s'échangent des messages. Les calculs avec passivation dispose d'un opérateur spécial qui permet de stopper un processus en cours d'exécution. Le processus suspendu peut ensuite être modifié ou transmis avant d'être réactivé. La passivation rend possible la modélisation de défaillances et d'opérations de reconfiguration dynamique. Nous nous intéressons aux équivalences comportementales dans ces calculs. Le comportement d'un processus est donné par un système de transitions étiquetées, qui exhibe les interactions d'un processus avec son environnement. Des relations, appelées bisimilarités, permettent ensuite d'identifier les processus qui ont le même comportement en comparant leurs interactions. Les bisimilarités définies jusqu'ici dans les calculs avec passivation restent trop complexes pour être utilisée en pratique. En outre il n'existe pas de bisimilarité correcte et complète dans le cas faible, c'est-à-dire lorsque les actions internes aux processus ne sont pas observables. Nous étudions ces deux problèmes dans cette thèse. Nous montrons d'abord qu'il est possible de définir une bisimilarité simple à manipuler pour un calcul avec passivation mais sans restriction. En revanche, nous donnons des contre-exemples qui laissent penser qu'il n'est pas possible de faire de même dans les calculs avec passivation et restriction. Nous définissons également un nouveau type de système de transitions étiquetées, qui permet de caractériser la congruence barbue dans le cas faible. Nous appliquons notre technique à différents calculs dont le Kell.
APA, Harvard, Vancouver, ISO, and other styles
10

Wolborski, Maciej. "Termination and passivation of Silicon Carbide Devices." Licentiate thesis, KTH, Microelectronics and Information Technology, IMIT, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-439.

Full text
Abstract:

Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. Despite this tremendous development in SiC technology, the reliability issues like device degradation or high channel mobility still remain to be solved.

This thesis focuses on SiC surface passivation and termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Three dielectrics with high dielectric constants, Al2O3, AlN and TiO2, were deposited on SiC with different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.5 kV, reaching 1.6 kV, compared to non passivated devices.

As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments indicate also that the measured leakage currents of the order of pA are dominated by surface leakage.

APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Passivation"

1

Nagarajan, R., and T. Alan Hatton, eds. Nanoparticles: Synthesis, Stabilization, Passivation, and Functionalization. Washington, DC: American Chemical Society, 2008. http://dx.doi.org/10.1021/bk-2008-0996.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

R, Nagarajan, Hatton T. Allan, American Chemical Society. Division of Colloid and Surface Chemistry., and American Chemical Society Meeting, eds. Nanoparticles: Synthesis, stabilization, passivation, and functionalization. Washington, DC: American Chemical Society, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Delorme, Sherry. The oxidation and passivation of iron sulfides. Sudbury, Ont: Laurentian University, 1994.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Lu, Xinying. Passivation and Corrosion of Black Rebar with Mill Scale. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-8102-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-32521-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Maki, Stephanie Ann. Passivation of pyrite as a means of decreasing pyritic oxidation. Sudbury, Ont: Laurentian University Press, 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

1946-, Barbottin Gérard, and Vapaille André 1933-, eds. Instabilities in silicon devices. Amsterdam: North-Holland, 1986.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Asia-Pacific Optical and Wireless Communications (2003 Wuhan, China). Optical fibers and passive components: APOC 2003 : Asia-Pacific optical and wireless communications : 4-6 November, 2003, Wuhan, China. Edited by Shen Steve I. Y, Society of Photo-optical Instrumentation Engineers., Zhongguo guang xue xue hui., Wuhan (China), and Wuhan East Lake High-Tech Development Zone (China). Administration Commission. Bellingham, Wash., USA: SPIE, 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Steven, Shen, Society of Photo-optical Instrumentation Engineers., Zhongguo guang xue xue hui., and Wuhan Municipal Government (China), eds. Optical fibers and passive components: APOC 2003: Asia-Pacific optical and wireless communications : 4-6 November 2003, Wuhan, China. Bellingham, Wash., USA: SPIE, 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Travassos, M. A. Passivation of surface modified aluminium by tungsten and tantalum ion implantationa. Manchester: UMIST, 1994.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Passivation"

1

Gooch, Jan W. "Passivation." In Encyclopedic Dictionary of Polymers, 520. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_8451.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Holtz, Per Olof, and Qing Xiang Zhao. "Hydrogen Passivation." In Springer Series in Materials Science, 117–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18657-8_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lu, Xinying. "Passivation of Iron." In Passivation and Corrosion of Black Rebar with Mill Scale, 1–15. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-8102-9_1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Chess, Paul. "Passivation and depassivation." In Electrochemical Processes and Corrosion in Reinforced Concrete, 41–46. London: CRC Press, 2023. http://dx.doi.org/10.1201/9781003348979-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Ferreira, Mário G. S., and Alda M. P. Simões. "Passivation and Localized Corrosion." In Electrochemical and Optical Techniques for the Study and Monitoring of Metallic Corrosion, 485–520. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3636-5_13.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Gromov, Alexander, Alexander Il'in, Ulrich Teipel, and Julia Pautova. "Passivation of Metal Nanopowders." In Metal Nanopowders, 133–52. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527680696.ch6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Lu, Xinying. "Determination Methods of Passivation." In Passivation and Corrosion of Black Rebar with Mill Scale, 17–25. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-8102-9_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Zhang, Xiaoge Gregory. "Passivation and Surface Film Formation." In Corrosion and Electrochemistry of Zinc, 65–91. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-9877-7_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Hanoka, Jack I. "Hydrogen Passivation of Polycrystalline Silicon." In Hydrogen in Disordered and Amorphous Solids, 81–90. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4899-2025-6_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Nakane, Akihiro, Shohei Fujimoto, Gerald E. Jellison, Craig M. Herzinger, James N. Hilfiker, Jian Li, Robert W. Collins, et al. "Inorganic Semiconductors and Passivation Layers." In Spectroscopic Ellipsometry for Photovoltaics, 319–426. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95138-6_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Passivation"

1

Lee, S., P. C. Ang, Z. Q. Mo, S. P. Zhao, and J. Lam. "Enhanced passivation integrity test for improved passivation failure detection." In 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2015. http://dx.doi.org/10.1109/ipfa.2015.7224363.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

WADA, Yoshinori, Yoichi MADA, and Kazumi WADA. "A New Surface Passivation of GaAs Using CVD --Atomic Layer Passivation--." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.d-5-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Sasagawa, Kazuhiko, Masataka Hasegawa, Naoki Yoshida, Masumi Saka, and Hiroyuki Abe´. "Prediction of Electromigration Failure in Passivated Polycrystalline Line Considering Passivation Thickness." In ASME 2003 International Electronic Packaging Technical Conference and Exhibition. ASMEDC, 2003. http://dx.doi.org/10.1115/ipack2003-35065.

Full text
Abstract:
It is known that the lifetime of the passivated metal line varies depending on kind and thickness of the passivation layer. The appropriate consideration of the effect of passivation on electromigration damage makes it possible to evaluate the reliability of the metal line with choosing kind or thickness of the passivation. This paper is focused on the effect of passivation thickness on the failure prediction. The failure prediction considering the passivation thickness is shown. First, the film characteristic constants depending on the passivation thickness are experimentally determined in the lines with three kinds of passivation thickness. Next, by extrapolating the obtained dependencies, the characteristic constants are determined to predict the lifetime of the line covered with the thicker passivation than that employed in the experiment, and the lifetime is predicted by the reliability evaluation method based on the numerical simulation.
APA, Harvard, Vancouver, ISO, and other styles
4

Subramanian, Sam, Ed Widener, Tony Chrastecky, Darryl Jones, Bill W. Jones, and Randal Mulder. "Investigation of Passivation Damage from the Backside." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0332.

Full text
Abstract:
Abstract Passivation damage, a common failure mode in microelectronics circuitry, can be easily identified by optical inspection in the form of a local 'discoloration' after exposing the die to a chemical that would penetrate through the crack and attacks metal lines. Unfortunately, this process destroys evidence of what damaged the passivation, since it attacks the damaged region. As a result, in many cases, the mechanism by which the passivation damage occurred is unclear. This problem is addressed in this paper by a procedure to examine passivation damage by transmission electron microscopy (TEM) of a cross-section sample prepared from the backside and without exposing the die from the top side. The backside approach was successfully used to assign the root cause of the passivation damage to packaging process. A topside approach to characterize the passivation damaged region can result in destruction of evidence at the defect location.
APA, Harvard, Vancouver, ISO, and other styles
5

Hua, Younan, Bingsheng Khoo, Henry Leong, Yixin Chen, Eason Chan, Jingyuan Wang, and Xiaomin Li. "Studies on a Novel Qualification Method of Silicon Nitride Layer." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0186.

Full text
Abstract:
Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.
APA, Harvard, Vancouver, ISO, and other styles
6

Kawami, Kazuyoshi, Atsushi Kinoshita, Hisashi Yamanaka, Yoji Fukuda, Hirotoshi Enoki, Takashi Iijima, Seiji Fukuyama, et al. "Evaluation of the Hydrogen Barrier Properties of Chromium Oxide Films Deposited on SUS304 Austenitic Stainless Steels." In ASME 2022 Pressure Vessels & Piping Conference. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/pvp2022-80128.

Full text
Abstract:
Abstract Austenitic stainless steels including type SUS304 of the Japanese Industrial Standard (JIS), which is similar to ASME Type 304 SS, are candidate materials for the various facilities of high-pressure gaseous hydrogen, such as a hydrogen station containers and piping. To prevent the hydrogen penetration into SUS304, we developed the passivation films mainly composed of chromium oxide and investigated the hydrogen barrier properties using the gas permeability test and the slow strain rate tensile (SSRT) test. The passivation films with a maximum thickness of 300 nm was formed on the surface of hot-rolled SUS304 (Ni equivalent 22.4) by a series of wet processing steps such as electro-polishing, chemical oxidation, cathode precipitation of chromium and passivation immersion. Cross-sectional views of TEM observation suggested that the film was amorphous like structure including many independent voids with a size of 10 to 20 nm. The hydrogen gas permeability test was performed in a hydrogen gas pressure of 400 kPa at 573 K, 673 K, and 773 K. The estimated hydrogen transmittance of SUS304 substrate with passivation coating was 2.8 × 10−13 mol / (m · s · Pa) at 773 K, while that without passivation coating was 2.2 × 10−11 mol / (m · s · Pa) at 773 K. SSRT test was performed in 110 MPa hydrogen and nitrogen gas atmosphere at room temperature, and strain rate was 4.17 × 10−5 s−1. The fracture surface of the specimen without passivation coating showed brittle like and relative reduction rate (RRA) was 0.61. On the other hand, the fracture surface of the specimen with passivation coating showed typical ductile like dimple structure and RRA was 0.88. As the passivation films did not peel, adhesion between passivation film and SUS304 surface seems to be well. From these considerations, we anticipate the developed passivation film can inhibit hydrogen embrittlement of SUS304.
APA, Harvard, Vancouver, ISO, and other styles
7

Tao, M. "A new surface passivation technique for crystalline Si solar cells: Valence-mending passivation." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922639.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Yun, Quanxin, Meng Lin, Xia An, Ming Li, Zhiqiang Li, Min Li, Xing Zhang, and Ru Huang. "Investigation of different interface passivation on Germanium: RTO-GeO2 and nitrogen-plasma-passivation." In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2012. http://dx.doi.org/10.1109/icsict.2012.6467938.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Pillet, N., I. Gibek, and P. Equios. "TDF2 satellite propulsion system passivation." In 36th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2000. http://dx.doi.org/10.2514/6.2000-3548.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Wang, Yun, and Paul H. Holloway. "Sulfur passivation of GaAs surfaces." In Advanced processing and characterization technologies. AIP, 1991. http://dx.doi.org/10.1063/1.40657.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Passivation"

1

Takahashi, Lynelle Kazue, Jessica Anne Bierner, and Russell L. Jarek. Passivation Coupon Study. Office of Scientific and Technical Information (OSTI), November 2017. http://dx.doi.org/10.2172/1408337.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Adhikari, Hemant, Shiyu Sun, Piero Pianetta, Chirstopher E. D. Chidsey, and Paul C. McIntyre. Surface Passivation of Germanium Nanowires. Office of Scientific and Technical Information (OSTI), May 2005. http://dx.doi.org/10.2172/890831.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Del Cul, G. D., L. D. Trowbridge, D. W. Simmons, D. F. Williams, and L. M. Toth. Passivation of fluorinated activated charcoal. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/658250.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Hwang, JEONGMO HWANG, Christopher Chen, and Young-Woo Ok. Field-Effect Passivation by Desired Charge Injection into SiNx Passivation in Crystalline-Silicon Solar Cells. Office of Scientific and Technical Information (OSTI), March 2024. http://dx.doi.org/10.2172/2324996.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Skorski, Daniel C., Joseph V. Ryan, Denis M. Strachan, and William C. Lepry. Engineering Glass Passivation Layers -Model Results. Office of Scientific and Technical Information (OSTI), August 2011. http://dx.doi.org/10.2172/1031991.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Clark, E. Evaluation of Alternate Surface Passivation Methods (U). Office of Scientific and Technical Information (OSTI), May 2005. http://dx.doi.org/10.2172/890165.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Wyrwas, R. B., and P. S. Korkinko. Passivation of Stainless Steel for Tritium Service. Office of Scientific and Technical Information (OSTI), December 2018. http://dx.doi.org/10.2172/1487375.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Bittner, Harlan F. The Role of Lithium Passivation in LiSO2. Fort Belvoir, VA: Defense Technical Information Center, December 1986. http://dx.doi.org/10.21236/ada193243.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Unertl, W. N., M. Grunze, and D. Frankel. Overlayer Adhesion and Passivation of Electronic Materials. Fort Belvoir, VA: Defense Technical Information Center, July 1992. http://dx.doi.org/10.21236/ada254783.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Richardson, Martin, Glenn Boreman, and Kathleen Richardson. Femtosecond Laser Passivation of GaAs Detector Material. Fort Belvoir, VA: Defense Technical Information Center, June 2008. http://dx.doi.org/10.21236/ada483164.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Passivation' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography