Academic literature on the topic 'Parabolic quantum well'

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Journal articles on the topic "Parabolic quantum well"

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Gusev, G. M., J. R. Leite, E. B. Olshanetskii, D. K. Maude, M. Cassé, J. C. Portal, N. T. Moshegov, and A. I. Toropov. "Quantum hall effect in a wide parabolic quantum well." Brazilian Journal of Physics 29, no. 4 (December 1999): 715–18. http://dx.doi.org/10.1590/s0103-97331999000400019.

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Gruhn, W. "Magnetic interlayer coupling across parabolic quantum-well." Journal of Physics: Conference Series 79 (August 1, 2007): 012006. http://dx.doi.org/10.1088/1742-6596/79/1/012006.

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Kazaryan, Eduard M., Artavazd A. Kostanyan, and Hayk A. Sarkisyan. "Impurity optical absorption in parabolic quantum well." Physica E: Low-dimensional Systems and Nanostructures 28, no. 4 (September 2005): 423–30. http://dx.doi.org/10.1016/j.physe.2005.05.047.

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Shayegan, M., T. Sajoto, J. Jo, M. Santos, and L. Engel. "Magnetotransport in a wide parabolic quantum well." Surface Science 229, no. 1-3 (April 1990): 83–87. http://dx.doi.org/10.1016/0039-6028(90)90840-5.

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Ishikawa, Takuya, Shinji Nishimura, and Kunio Tada. "Quantum-Confined Stark Effect in a Parabolic-Potential Quantum Well." Japanese Journal of Applied Physics 29, Part 1, No. 8 (August 20, 1990): 1466–73. http://dx.doi.org/10.1143/jjap.29.1466.

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Chen, W. Q., S. M. Wang, T. G. Andersson, and J. Thordson. "Inverse parabolic quantum well and its quantum‐confined Stark effect." Journal of Applied Physics 74, no. 10 (November 15, 1993): 6247–50. http://dx.doi.org/10.1063/1.355167.

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ZHAO, FENG-QI, XI XIA LIANG, and SHILIANG BAN. "ENERGY LEVELS OF A POLARON IN A FINITE PARABOLIC QUANTUM WELL." International Journal of Modern Physics B 15, no. 05 (February 20, 2001): 527–35. http://dx.doi.org/10.1142/s0217979201004642.

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The effects of the electron–phonon interaction on the electron (or hole) energy levels in parabolic quantum well (PQW) structures are studied. The ground state, the first excited state and the transition energy of the electron (or hole) in the GaAs/Al 0.3 Ga 0.7 As parabolic quantum well are calculated by using a modified Lee–Low–Pines Variational method. The numerical results are given and discussed. A comparison between the theoretical and experimental results is made.
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Ruan, Yong-Hong, Qing-Hu Chen, and Zheng-Kuan Jiao. "Variational Path-Integral Study on a Bipolaron in a Parabolic Quantum Wire or Well." International Journal of Modern Physics B 17, no. 22n24 (September 30, 2003): 4332–37. http://dx.doi.org/10.1142/s0217979203022404.

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The expression of the ground-state energy of a bipolaron in a parabolic quantum wire or well is derived within the framework of Feynman variational path-integral theory. We obtain a general result with arbitrary electron-phonon coupling constant, confining potential strength, and ratio of dielectric constants, which could be used for further numerical calculation of bipolaron properties. Moreover, it is shown that all previous path-integral formula for a bipolaron in a parabolic quantum wire, quantum well or quantum dot can be recovered in the present formalism.
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Figarova, S. R., H. I. Huseynov, and V. R. Figarov. "Thermoelectric power hysteresis in semi-parabolic quantum well." Thin Solid Films 721 (March 2021): 138554. http://dx.doi.org/10.1016/j.tsf.2021.138554.

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Zhang, Hong, Man Shen, and Jian-Jun Liu. "Biexciton binding energy in parabolic quantum-well wires." Journal of Applied Physics 103, no. 4 (February 15, 2008): 043705. http://dx.doi.org/10.1063/1.2874115.

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Dissertations / Theses on the topic "Parabolic quantum well"

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Le, Hung Manh, and n/a. "Electronic Properties of Nanostructures from Hydrostatics and Hydrodynamics." Griffith University. School of Science, 1997. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20070403.094305.

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The behaviour of electrons in nanostructures such as quantum wells is of interest for the design of new electronic and electro-optic devices, and also for exploration of basic many-body physics. This thesis develops and tests improved methods for describing such electronic behaviour. The system used for this work was the parabolic quantum well (PQW), an important special system which has recently attracted much experimental and theoretical attention. We firstly report self-consistent nonlinear groundstate solutions of the Poisson equation together with the Thomas-Fermi (TF) hydrostatic equations. In contrast to most previous solutions, all the electron density profiles were inhomogeneous and continuous. We also added a von Weizsacker term with and without the exchange/exchange-correlation to the above treatment, using a novel numerical approach allowing for wider electron gases than previously possible. We also report for the first time the effects of spatially varying effective mass and dielectric function in theories of this type. To investigate infrared response of these systems, we apply new hydrodynamic theories recently proposed by Dobson. By using this type of theory, we simultaneously satisfy the Harmonic Potential Theorem (extended generalized Kohn theorem) and obtain the correct 2D plasmon dispersion, as well as obtaining the correct spacing of standing plasmons. Other inhomogeneous hydrodynamic theories do not achieve this. We also showed analytically an exact solution for a plasmon mode at the Kohn frequency in addition to one found in the Harmonic Potential Theorem. An open hydrodynamic theory was then developed based on this type of mode. Numerical application of Kohn Frequency Theorem theory was shown and the results were compared with other existing hydrodynamic theories.
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Le, Hung. "Electronic Properties of Nanostructures from Hydrostatics and Hydrodynamics." Thesis, Griffith University, 1997. http://hdl.handle.net/10072/366817.

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The behaviour of electrons in nanostructures such as quantum wells is of interest for the design of new electronic and electro-optic devices, and also for exploration of basic many-body physics. This thesis develops and tests improved methods for describing such electronic behaviour. The system used for this work was the parabolic quantum well (PQW), an important special system which has recently attracted much experimental and theoretical attention. We firstly report self-consistent nonlinear groundstate solutions of the Poisson equation together with the Thomas-Fermi (TF) hydrostatic equations. In contrast to most previous solutions, all the electron density profiles were inhomogeneous and continuous. We also added a von Weizsacker term with and without the exchange/exchange-correlation to the above treatment, using a novel numerical approach allowing for wider electron gases than previously possible. We also report for the first time the effects of spatially varying effective mass and dielectric function in theories of this type. To investigate infrared response of these systems, we apply new hydrodynamic theories recently proposed by Dobson. By using this type of theory, we simultaneously satisfy the Harmonic Potential Theorem (extended generalized Kohn theorem) and obtain the correct 2D plasmon dispersion, as well as obtaining the correct spacing of standing plasmons. Other inhomogeneous hydrodynamic theories do not achieve this. We also showed analytically an exact solution for a plasmon mode at the Kohn frequency in addition to one found in the Harmonic Potential Theorem. An open hydrodynamic theory was then developed based on this type of mode. Numerical application of Kohn Frequency Theorem theory was shown and the results were compared with other existing hydrodynamic theories.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Science
Science, Environment, Engineering and Technology
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Acuna, Guillermo Pedro. "Far Field and Near Field Terahertz Spectroscopy on Parabolic Quantum Wells." Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-115893.

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Choque, Nilo Mauricio Sotomayor. "Estudo da dinâmica de caos no gás tridimensional de elétrons de alta mobilidade." Universidade de São Paulo, 2002. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-23022012-142557/.

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A dinêmica caótica, em arranjos de bilhares eletrônicos bidimensionais e tridimensionais , em heteroestruturas semicondutoras de AlxGa1-xAs/GaAs foi estudada tanto de forma experimental como através de simulações numéricas. Como primeira parte, a dinâmica eletrônica caótica em super-redes de antipontos bidimensionais foi tratada sob a influência de campo magnético uniforme aplicado de forma pararela ao plano do gás de elétrons. Nestas circunstâncias, a anisotropia do contorno de Fermi do gás bidimensional de elétrons produzida pelo campo magnético pararelo, distorce fortemente a forma das trajetórias eletrônicas induzindo mudanças drásticas nas oscilações de comensurabilidade da magnetoresistência na região de campo fraco, em temperaturas criogênicas. Como segunda parte, arranjos de bilhares eletrônicos tridimensionais foram realizadas, pela primeira vez, através da gravação de super-redes retangulares de buracos mecânicos cilíndricos em poços quânticos parabólicos, os quais contêm o gás tridimensional de elétrons de alta mobilidade. Medidas de resistividade nestes sistemas revelam a presença de picos anomalos na região de campo fraco, em forma similar às medições em sistemas de antipontos bidimensionais. Foi calculada a dinâmica eletrônica do bilhar tridimensional analisando -se a evolução das trajetórias no espaço de fases através das seções espaciais de Poincaré. Calculou-se também a magnetoresistência pxx do gás tridimensional através da teoria de resposta linear, encontrando-se que a presença de ressonância não lineares é refletida nos picos anômalos observados. A realização destes sistemas permitiu o estudo de fenômenos físicos novos como as oscilações de comensurabilidade em sistemas tridimensionais e os efeitos de tamanho galvano-magnéticos devido às ressonâncias geométricas.
The chaotic electron dynamics in two-dimensional and three-dimensional arrays of elec­ tron billiards in ALx Ga1-xAs/GaAs semiconductor heterostructures has been studied in experimental way and also through numerical simulations. As a first part, the chaotic electron dynamics in two-dimensional antidot super-lattices has been studied under the influence of a uniform magnetic field applied in parallel configuration related to the plane of the electron gas. In this case, the Fermi contour anisotropy of the two-dimensional elec­ tron gas induced by the parallel field highly distorts the shape of the electron trajectories inducing pronounced changes in the commensurability peaks of the low field magnetoresis­ tance, in cryogenic temperatures. In the second part, arrays of three dimensional electron billiards were obtained, by first time, through the patterning of rectangular super-lattices of cylindrical voids in ALx Ga1-xAs/GaAs parabolic quantum wells containing a high mo­ bility three-dimensional electron gas. Resistivity measurements in these systems reveal anomalous peaks in the low magnetic field region in similar way as measurements in two-dimensional antidots systems. The electron dynamics of the three-dimensional bil­ liard was calculated, analyzing the evolution of trajectories in phase space by means of Poincaré space of sections. The magnetoresistance xx of the three-dimensional electron gas was calculated through linear responde theory, being found that nonlinear resonances are reflected in the observed anomalous peaks. The accomplishment os these systems allowed the study of new physical phenomena such as the commensurability oscillations in three-dimensional systems and size-effects due to geometrical resonances.
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Lamas, Tomás Erikson. "Epitaxia por feixe molecular de camadas dopadas do tipo p para a construção de dispositivos optoeletrônicos." Universidade de São Paulo, 2004. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-27072004-160748/.

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Durante as últimas três décadas, a epitaxia por feixe molecular se estabeleceu como uma técnica excelente para o crescimento de camadas semicondutoras de alta qualidade, tanto para a construção de dispositivos quanto para a pesquisa básica. No entanto ainda não existe um método universalmente aceito para obter-se camadas dopadas do tipo p nesta técnica de crescimento. Neste trabalho, estudamos, otimizamos e comparamos três diferentes métodos para a dopagem de camadas de GaAs do tipo p. Dois desses métodos exploraram o caráter anfotérico do silício em substratos de GaAs(311)A (através da mudança das condições de crescimento) e GaAs(100) (aplicando uma nova técnica chamada epitaxia assistida por gotas (droplets) de gálio). O terceiro método foi baseado no uso do carbono, cujas propriedades como dopante do tipo p são bem conhecidas em outras técnicas de crescimento epitaxial, mas pouco estudadas na epitaxia por feixe molecular. Para verificar a qualidade das camadas dopadas obtidas, crescemos estruturas como poços quânticos parabólicos com alta mobilidade de buracos e dispositivos optoeletrônicos como diodos emissores de luz e laseres.
During the last three decades, molecular-beam epitaxy has emerged as an excellent technique for the growth of high-quality semiconductor layers both for device construction and for basic research. In spite of this fact, there is still a lack of a universally accepted method to obtain p-type doped layers by this growth technique. In this work, we studied, optimized and compared three different methods to get p-type GaAs layers. Two of these methods exploited the amphoteric behavior of silicon atoms both on GaAs(311)A (by changing the growth conditions) and on GaAs(100) (by employing a new growth mode called droplet-assisted epitaxy) substrates. The third method was based on the use of carbon, whose properties as a p-type dopant in GaAs layers are well known in other epitaxial techniques but scarcely investigated in molecular-beam epitaxy. In order to check the quality of the doped layers, we grew structures like high hole-mobility parabolic quantum wells and optoelectronic devices like light-emitting diodes and lasers.
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Duarte, Celso de Araujo. ""Propriedades magnéticas e de spin em semicondutores do grupo III-V"." Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-06092006-101017/.

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Neste trabalho, apresentamos o resultado de nossas investigações em amostras de poços quânticos parabólicos (PQW) de AlGaAs crescidas em substratos de GaAs por MBE (Molecular Beam Epitaxy). Nossos estudos se concentram nas implicações da variação do fator g de Landé ao longo da estrutura dos PQW, a qual ocorre em virtude da dependência dessa grandeza com respeito ao conteúdo de Al na liga AlGaAs. Essas implicações são analisadas através de medidas de transporte eletrônico (medidas de Hall e do efeito Shubnikov-de Haas). As medidas de Subnikov-de Haas a temperaturas da ordem de dezenas a centenas de milikelvin com variação do ângulo de inclinação se mostram um eficiente método para a determinação do fator g. Distinguimos não só o fator g determinado pelas propriedades da liga, como também uma contribuição oriunda de efeitos de muitos corpos (contribuição de troca). Por outro lado, as medidas de Hall nos revelam um comportamento anômalo, que mostramos não ter origem no conhecido "efeito Hall anômalo" presente em materiais ferromagnéticos, nem em efeitos de ocupação de múltiplas sub-bandas. Atribuímos o fenômeno a um efeito "válvula de spin", conseqüente da variação espacial do fator g. Nossas observações nos permitem a idealização de um transistor "válvula de spin", prescindindo do emprego de materiais magnéticos.
We present the results of our investigations concerning MBE grown AlGaAs/GaAs parabolic quantum well (PQW) samples. We focused on the variation of the Landé g factor along the structure of the PQWs, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The implications are studied by Hall and Shubnikov-de Haas measurements. Shubnikov-de Haas measurements at temperatures of the order of tenths to hundreds of milikelvin with variation of the tilt angle are shown to be an efficient method for the determination of the g factor. We could distinguish not only the alloy g factor, but its many body contribution (exchange contribution). On the other hand, Hall measurements exhibit an unusual behavior, which we prooved it has no relation neither to the well known "anomalous Hall effect", a characteristic of ferromagnetic materials, nor to a multi subband occupation effect. We atribute such behavior to a "spin valve effect", caused by the spatial variation of the g factor. Our observations allow us to idealize a "spin valve" transistor, without any ferromagnetic material in its structure.
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Lo, K. L., and 羅崑崙. "Photoionization of Donor Impurity In a Finite Parabolic Quantum Well." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/55333722049186337801.

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碩士
國立交通大學
電子物理系
86
In this thesis, we discussed the size of the photoinonization cross section of donor impurity in a finite parabolic quantum well. First, the groundstate energies and wave functions of finite parabolic quantum wells of GaAs surrounded by A1xGa1x As are calculated. Next, the binding energies of ground-state are evaluated for donor impurity in the wells with a variation method, using the wave functions that are the product of the hydrogenic wave functions and the wave functions of finite parabolic quantum wells. Finally, the photon energy dependence of the photoionization cross sections is calculated by using the formula of photoionization cross section of bulk case.   The result we obtained shows the binding energies and the photoionization cross-sections are affected by the width and the depth of the quantum wells.
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Acuña, Guillermo [Verfasser]. "Far field and near field terahertz spectroscopy on parabolic quantum wells / vorgelegt von Guillermo Pedro Acuña." 2010. http://d-nb.info/100402231X/34.

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Books on the topic "Parabolic quantum well"

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Melnikov, D. V., J. Kim, L. X. Zhang, and J. P. Leburton. Few-electron quantum-dot spintronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.2.

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This article examines the spin and charge properties of double and triple quantum dots (QDs) populated containing just a few electrons, with particular emphasis on laterally coupled QDs. It first describes the theoretical approach, known as exact diagonalization method, utilized on the example of the two-electron system in coupled QDs that are modelled as two parabolas. The many-body problem is solved via the exact diagonalization method as well as variational Heitler–London and Monte Carlo methods. The article proceeds by considering the general characteristics of the two-electron double-QD structure and limitations of the approximate methods commonly used for its theoretical description. It also discusses the stability diagram for two circular dots and investigates how its features are affected by the QD elliptical deformations. Finally, it assesses the behavior of the two-electron system in the realistic double-dot confinement potentials.
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Book chapters on the topic "Parabolic quantum well"

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Sotomayor, N. M., G. M. Gusev, J. R. Leite, N. T. Moshegov, and A. I. Toropov. "Weak localization effects in a wide parabolic quantum well." In Springer Proceedings in Physics, 807–8. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_382.

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Vinitsky, S. I., O. Chuluunbaatar, V. P. Gerdt, A. A. Gusev, and V. A. Rostovtsev. "Symbolic-Numerical Algorithms for Solving Parabolic Quantum Well Problem with Hydrogen-Like Impurity." In Computer Algebra in Scientific Computing, 334–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-04103-7_29.

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Bandyopadhyay, Dipan, Apu Mistry, and JoyeetaBasu Pal. "Study on Enhancement of Optical Output of InxGa1-xN/GaN Parabolic Quantum Well LEDs, Varying Indium Compositions, and Well Widths." In Proceedings of International Conference on Industrial Instrumentation and Control, 343–49. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7011-4_34.

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Sahoo, N., A. K. Panda, and T. Sahu. "Effect of Intersubband Interaction on Multisubband Electron Mobility in a Parabolic Quantum Well Under Applied Electric Field." In Physics of Semiconductor Devices, 231–34. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_58.

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Brey, L., N. F. Johnson, Jed Dempsey, and B. I. Halperin. "Electronic Properties of Parabolic Quantum Wells." In Light Scattering in Semiconductor Structures and Superlattices, 525–41. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3695-0_38.

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Maranowski, K. D., A. C. Gossard, K. Unterrainer, and E. Gornik. "Electrically Excited Terahertz Emission from Parabolic Quantum Wells." In Intersubband Transitions in Quantum Wells: Physics and Devices, 181–86. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_27.

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Ghatak, Kamakhya Prasad, and Sitangshu Bhattacharya. "The DSL in Quantum Wells of Non-Parabolic Semiconductors." In Debye Screening Length, 3–61. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01339-8_1.

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Ghatak, Kamakhya Prasad, and Sitangshu Bhattacharya. "The ER in Quantum Wells of HD Non-parabolic Semiconductors." In Heavily-Doped 2D-Quantized Structures and the Einstein Relation, 1–116. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08380-3_1.

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Gwinn, E. G., P. F. Hopkins, A. J. Rimberg, R. M. Westervelt, M. Sundaram, and A. C. Gossard. "Quantum Hall Effect in Wide Parabolic GaAs/AlxGa1−xAs Wells." In High Magnetic Fields in Semiconductor Physics II, 58–61. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_10.

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Bratschitsch, R., T. Müller, R. Kersting, G. Strasser, and K. Unterrainer. "Coherent THz emission from optically pumped intersubband plasmons in parabolic quantum wells." In Ultrafast Phenomena XII, 203–5. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-56546-5_60.

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Conference papers on the topic "Parabolic quantum well"

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Sahu, Trinath, Ajit K. Panda, and Sangeeta Palo. "Parabolic double quantum well structures: Study of multisubband electron mobility." In 2012 International Conference on Emerging Electronics (ICEE 2012). IEEE, 2012. http://dx.doi.org/10.1109/icemelec.2012.6636266.

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Sahu, Ajit K., and Narayan Sahoo. "Multisubband Electron Mobility in Parabolic Coupled Double Quantum Well Structure." In 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). IEEE, 2022. http://dx.doi.org/10.1109/edkcon56221.2022.10032897.

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Capasso, F., S. Sen, A. C. Gossard, R. A. Spah, A. L. Hutchinson, and S. N. G. Chu. "Observation of resonant tunneling through a compositionally graded parabolic quantum well." In 1987 International Electron Devices Meeting. IRE, 1987. http://dx.doi.org/10.1109/iedm.1987.191350.

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Sahoo, Narayan, A. K. Panda, and Trinath Sahu. "Enhancement of multisubband electron transport mobility in square — Parabolic double quantum well." In 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8073948.

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Keshavarz, Alireza, Naser Zamani, and Hamid Nadgaran. "Optical gain in double semi-parabolic quantum well laser typical of AlGaAs/GaAs." In 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014). IEEE, 2014. http://dx.doi.org/10.1109/nusod.2014.6935365.

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Sahu, Trinath, Ajit K. Panda, and Sangeeta Palo. "AlxGa1−xAs based parabolic quantum well structures: Enhancement of multisubband electron mobility." In 2012 International Conference on Communications, Devices and Intelligent Systems (CODIS). IEEE, 2012. http://dx.doi.org/10.1109/codis.2012.6422161.

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Keshavarz, Alireza, Naser Zamani, and Farzin Emami. "Investigation of optical gain in AlGaAs/GaAs symmetric double semi-parabolic quantum well laser." In 2012 Photonics Global Conference (PGC). IEEE, 2012. http://dx.doi.org/10.1109/pgc.2012.6457964.

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Keller, Janine, Giacomo Scalari, Curdin Maissen, Gian Lorenzo Paravicini-Bagliani, Johannes Haase, Michele Failla, Maksym Myronov, David R. Leadley, James Lloyd-Hughes, and Jerome Faist. "Highly non-parabolic strained Ge quantum well for THz ultra-strong light-matter coupling." In 2017 Conference on Lasers and Electro-Optics Europe (CLEO/Europe) & European Quantum Electronics Conference (EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087625.

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Gurjar, Ramvilas, Chandra Prakash Singh, Ajay Singh Meena, and Kankat Ghosh. "Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based Micro-LED at low current density." In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2022. http://dx.doi.org/10.1109/nusod54938.2022.9894798.

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Sahoo, Narayan, Sangeeta Palo, Ajit K. Panda, and Trinath Sahu. "Effect of parabolic potential on improvement of electron mobility in hybrid double quantum well structure." In ADVANCED MATERIALS: Proceedings of the International Workshop on Advanced Materials (IWAM-2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5050760.

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