Academic literature on the topic 'Oxydes métalliques et conducteurs transparents'
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Journal articles on the topic "Oxydes métalliques et conducteurs transparents"
Belkhalfa, Hakim, Razika Tala-Ighil, Samira Sali, Salim Kermadi, Samira Sili, Messaoud Boumaour, Faiza Tayour, Fatiha Ait Amar, and Yasmine Si Ahmed. "Effet du recuit de la métallisation par sérigraphie sur les propriétés optiques des couches minces de ZnO déposées par spray." Journal of Renewable Energies 12, no. 3 (October 26, 2023). http://dx.doi.org/10.54966/jreen.v12i3.144.
Full textDissertations / Theses on the topic "Oxydes métalliques et conducteurs transparents"
Rey, Germain. "Etude d'oxydes métalliques nanostructurés (ZnO,SnO2) pour applications photovoltaïques, notamment oxydes transparents conducteurs et cellules solaires à colorant." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENI017.
Full textMetallic oxide nanostructures play a critical role in dye-sensitized solar cells as front transparent electrodes and photoanodes. The use of stannic oxide (SnO2) and zinc oxide (ZnO) have been motivated by their particularly suitable structural, electrical and optical properties for dye-sensitized solar cells. Fluorine doped-SnO2 transparent electrodes have been deposited by spray pyrolysis in the form of thin films and consist of nanoscale grains. Their optical and electrical properties have been optimized in order to integrate them into dye-sensitized solar cells. The electron transport has been investigated in details and the influence of each scattering mechanism has quantitatively been assessed. ZnO photoanodes have directly been grown on the SnO2 surface by chemical vapor deposition in the form of nanowires. The nanowire diameter and surface density have been controlled by the growth conditions and the substrate surface oxidation, respectively. The nanowire-based photoanodes have subsequently been integrated into dye-sensitized solar cells. The relatively low efficiency of these cells has been found to be due to the small ZnO surface area, which limits the amount of dye anchored to its surface. In order to circumvent this limitation, ZnO nanoparticles have been deposited on the nanowire surface by chemical bath deposition. The nanocomposite photoanodes lead to the fabrication of dye-sensitized solar cells with promising efficiency by combining both efficient electron transport and high developed surface area
Trenque, Isabelle. "Synthèse et caractérisation d’oxydes métalliques ZnO au bénéfice de nouvelles stratégies d’élaboration d’absorbeurs IR." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR14905/document.
Full textThanks to its absorption / reflexion properties limited to the UV and the IR range, n-doped zinc oxide is a promising candidate for the elaboration of transparent and insulating films in smart windows. Nanostructured particles of Ga-doped zinc oxide were elaborated by polyol process. Polyol process was used in order to control the size and the morphology of the particles. Both experimental and theoretical data show that a maximum of IR absorption efficiency is obtained for a doping rate of 2.6 molar percent. Colloidal suspensions with high transmission in the visible range combined with significant absorption of the near infrared range were obtained using two strategies. The first one is the encapsulation of the Ga-doped ZnO particles by a fluoride shells with an intermediate refractive index between ZnO and the dispersion medium. The second one is the optimization of the dispersion state of nano-colloidal suspensions thanks to the adsorption of thioalkanes on the Ga-doped ZnO crystallite surfaces
Aviles, Thomas. "Etude du dépôt par pulvérisation cathodique des matériaux pour la réalisation de cellules photovoltaïques couche mince à base de CIGS ou CZTS." Thesis, Lille 1, 2012. http://www.theses.fr/2012LIL10126.
Full textThin film photovoltaic cells based on CIGS and CZTS materials has been initiated in this work. Environmental and economic issues have been taken into account to define an original strategy. We aim to substitute all the toxic and rare materials by abundant and non-toxic materials. In order to simplify the fabrication process, we also decide to deposit all layers using sputtering technique. The molybdenum back contact has been developed on a soda lime glass (SLG) substrate, with adequate electrical properties and good adhesion to the substrate even after thermal treatments similar to those used during the absorber formation. We have verified the required sodium migration from the SLG substrate to the molybdenum surface. A bibliographic study has been done to evaluate a single-target sputtering method to form CIGS and CZTS films. CZTS thin film deposition from a single target has been studied, with unsatisfactory results. We finally suggest an original multi-target method. Then, a bibliographic study has been done to evaluate the relevance of a sputtered Zn(S,O) buffer layer to replace the CBD-CdS conventional buffer layer. A study of RF-sputtered AZO films has been carried out, but we didn’t obtain the required electrical conductivity. We finally study RF-sputtering of ITO films. We developed amorphous ITO thin films with excellent electrical and optical properties. We suggest using this material as the window layer of solar cells
Trenque, Isabelle. "Synthèse et caractérisation d'oxydes métalliques ZnO au bénéfice de nouvelles stratégies d'élaboration d'absorbeurs IR." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-01017168.
Full textMohgouk, Zouknak Louis David. "Optimisation d'oxydes métalliques pour la réalisation d’électrode en adéquation avec le matériau photosensible dans l'infrarouge." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT031.
Full textOver the past few decades, the development of zero-dimensional (0D) materials or quantum dots (QDs) has grown significantly. Among these materials, lead sulphide (PbS) QDs have received particular attention due to their outstanding properties, including tunable optical absorption from 600 to 2600 nm. PbS QDs are considered to be one of the most promising materials for the next generation of infrared sensors. There is therefore growing interest in their use in industrial applications. When these materials are integrated into optoelectronic devices, they require the use of efficient charge extraction electrodes, as well as a transparent electrical contact in the IR for better performance. In this thesis work, we studied the properties of hole extraction electrodes (HTL) based on transition metal oxides and the transparent electrical contact based on In2O3 (TCO or transparent and conductive oxide) prepared by sputtering. These studies were initially carried out on individual layers of TCO and HTL. Characterisation of the TCO films showed that hydrogen doping can improve their optical properties in the infrared region of the electromagnetic spectrum (the region of interest for the targeted applications). Secondly, in order to fabricate photodiode structures, they were integrated onto a film of PbS QDs deposited on an electrode optimised for electron extraction and transport. Appropriate characterisations have shown that ultra-thin NiOx films can be better alternatives to the MoOx layers traditionally used as hole extraction and transport materials on PbS QD films
Benwadih, Mohammed. "Transistors souples et hautes performances à oxydes métalliques semi-conducteurs." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10192.
Full textFlexible electronics has experienced major advances in these last years. Indeed, the boom of flat panel displays (LCDs, AMOLED.) market is undergoing an exponential increase. One of the alternative solutions to amorphous silicon (a-Si) commonly used nowadays in these products is the development of metal oxide semiconductors. These materials are experiencing a huge consideration in both academic and industrial research, as well as in development labs due to their multiple performances. Besides their high electrical properties, with typical charge carrier mobilities in the order of 10 cm2V-1s-1. They can also be processed giving crystalline or amorphous structures. In this work, we have chosen to develop a complete chemical process based on the sol-gel technique to elaborate ternary metal oxide semiconductors, refered as In-(X)-Zn-O (IXZO) using different metal X as dopants. This innovative process for metal oxide semiconductors has allowed us to determine the best chemical composition, leading to a high stability and excellent electrical performances. Then, after having optimized the technological barriers (composition, doping, concentration, interfaces ...), we have characterized the nanostructure of these materials and evidence a phase segregation of the elementary oxides inside the material. We have also obtained a better understanding of charge transport properties in these semiconductors and assessed a percolation-based conduction model valid over a wide range of metal dopants. Finally, we have developed and optimized a combined thermal and UV flash lamp annealing process and demonstrated the feasibility of the integration of metal oxides on flexible substrates
Souque, Matthieu. "Développement de conducteurs moléculaires et d'oxydes métalliques nanostructurés pour l'industrie aérospatiale." Toulouse 3, 2011. http://www.theses.fr/2011TOU30022.
Full textThe preparation of nanostructured materials by chemical methods yielded to competitive solutions for three applications chosen by Thales Alenia Space and the CNES. The main part of the work was dedicated to obtaining light and easy to handle materials for Electro Magnetic Interference (EMI) shielding and absorption beyond 10 GHz, in order to ensure the EM Compatibility (EMC) in hermetic Radio Frequency (RF) electronic boxes on-board satellites. The developed colloidal solutions of the molecular conductor TTF-TCNQ can be directly deposited onto various substrates. The deposited films exhibit real and imaginary permittivities above 100 between 1 and 18 GHz and consequently excellent EMI shielding performance for a material density lower than carbon's. Composite materials containing this material have also been prepared to demonstrate the ability to control the material permittivities on purpose to prepare Radar Absorbing Materials (RAM). The second issue addressed during this work was conferring an antistatic property to a passive thermal control coating without degradation of its thermo-optical properties. The use of a chemical approach to nucleate ZnO particles into the resin yielded to 3 nm particles without agglomerates in the resin. The thermo-optical properties of these composites were superior to sonically dispersed particles prepared in the past. The Electrostatic Surface Discharge (ESD) tests were to be carried out at ONERA after this work. Last, we evaluated the performances of dosimeters whose sensitive material was nanostructured Sn/SnOx. Their sensibilities to gamma rays (measured at ONERA) were similar to the latest RADFET and they exhibited an excellent morphological stability under harsh solicitations
Alhamed, Mounir. "Utilisation des conducteurs transparents SnO2 et In2O3 dopé Sn dans la conversion de l'énergie solaire." Montpellier 2, 1987. http://www.theses.fr/1987MON20246.
Full textChavillon, Benoît. "Synthèse et caractérisation d'oxydes transparents conducteurs de type p pour application en cellules solaires à colorant." Nantes, 2011. http://www.theses.fr/2011NANT2024.
Full textThe objective of the thesis was clearly identified as the synthesis of nanostructured p-type semi-conductors for the fabrication of p-Dye Sensitized Solar Cells (p-DSSCs). In that framework, our studies concerned first the preparation of crack free homogeneous films of NiO with control of their thickness by an hydrothermal method. Then, a low fraction of metallic nickel was systematically detected which could explain in part the good photovoltaic performances of solar cell with NiO as photocathode. However, to achieve higher yield, NiO must be replaced by an other p-type semiconductor to deliver higher Voc. In that context, the synthesis of CuGaO2 nanoparticles by an hydrothermal method was undertaken with ethylene glycol as reducing agent. P-DSSC was set up with this material and exhibits interesting photovoltaic performance. In parallel, synthesis of nanoparticles of LaOCuS was carried out. Unfortunately, this compound has not been tested in dye sensitized solar cell because of a lack of an appropriate redox mediator. Finally, the stabilization of p-type ZnO:N was performed by nitridation of zinc peroxide ZnO2. This compound crystallizes with a wurtzite structure which accommodates the presence of peroxide groups, nitride anions and zinc vacancies
Bizo, Liliana. "Nouveaux oxydes conducteurs transparents à structure fluorine déficitaire en oxygène, contenant de l’antimoine (V) ou des paires cationiques M(II)/Sb(V) ou Sn(IV) : cristallochimie et propriétés physiques." Caen, 2007. http://www.theses.fr/2007CAEN2052.
Full textThe synthesis, the crystal chemistry and the physical properties of new transparent conducting oxides (TCOs) have been investigated in indium rich oxides. The various compositions and solid solutions systematically exhibit the oxygen deficient fluorine type of the MO2-x oxides, namely: the bixbyite type for x = 0,5 and the M7O12 type for x = 0,29. Two main results have been obtained : 1° as present in In2O3 and the M7O12 type for the first time, antimony (V) yields a very good electrical conductivity and optical transparency, as well. The best example is found in the antimony doped indium oxide IAO. 2° the charge compensated cationic substitutions of the divalent (Zn, Cu)/pentavalent (Sb) or tetravalent Sn(IV) cationic pairs for In result in a good transparent conductivity, above all a rather low electrical resistivity, smaller than 10-3 Ωcm. The crystal chemical characterisation by X-ray diffraction and Time of Flight Neutron Diffraction (TOF) allows to get accurate information regarding the variation of the cell parameters and the metal-oxygen distances in the solid solutions and the cationic distribution: the latter one is of high interest as dealing with the case of the 4d10 isoelectronic cationic series In3+, Sn4+, Sb5+ and Te6+. The striking novelty of these results has to be found in the electrical conductivity and optical transparency which are obtained in a rather simple way i. E. After the last heating treatment at air. Using any reducing chemical procedure, as in the case of the preparation of the model oxide ITO, is fully unnecessary