Dissertations / Theses on the topic 'Oxyde conducteur'
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Goux, Aurélie. "Electrodépôt en présence d'additifs d'un oxyde semi-conducteur : le ZnO." Paris 6, 2004. http://www.theses.fr/2004PA066141.
Le, Boulbar Emmanuel. "Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons." Phd thesis, Université d'Orléans, 2010. http://tel.archives-ouvertes.fr/tel-00667730.
Chmielowski, Radoslaw. "Bicouche oxyde ferroélectrique / oxyde conducteur Bi3. 25La0. 75Ti3O12 / Sr4Ru2O9 : élaboration par ablation laser, caractérisations structurales et propriétés électrique." Toulon, 2007. http://www.theses.fr/2007TOUL0007.
Bilayers ferroelectric oxide / conductive oxide, Bi3. 25La0. 75Ti3O12 (BLT) / Sr4Ru2O9 / Si[100] were elaborated by pulsed laser deposition. Structural characterizations were done by electron microscopy and X-ray diffraction; electrical properties were measured by impedance spectroscopy and Van der Pauw’s method. It is the first time that Sr4Ru2O9 is elaborated as thin films. We have shown that Sr4Ru2O9 is a conductive oxide at high temperature and has a semiconductor behavior at low temperature. The BLT thin films have polarization out of the substrate plane. Thick films of the BLT have polarization in the plane, which corresponds to a preferential orientation (00l). An intermediate layer, based on SrTiO3, between the substrate oxide Sr4Ru2O9 and the layer of BLT, was highlighted by electron microscopy. This phase grows at the cost of the ferroelectric material
Ledru, Romuald. "Mesure par spectroscopie d'admittance de jonctions Métal/Oxyde/Semi-Conducteur Organique : Analyse de la réponse diélectrique du pentacène." Thesis, Reims, 2012. http://www.theses.fr/2012REIMS035/document.
Organic transistors are vital in many applications of organic electronics but the electrical performance and time stability are technological limitation in order to make this technology reliable. Moreover, in these devices, the charge transport phenomenon has not to be clearly understood even if different models are commonly used to explain the field effect in organic transistors. In this context, this thesis talks about the admittance spectroscopy characterization of metal / oxide / organic semiconductor / metal junctions and analysis the organic semiconductor electrostatic behavior.The admittance spectroscopy measurements were performed on a wide frequency range (0.1Hz to 1MHz) in which the measured dielectric loss may be associated with the orientation phenomenon (as oscillation) of dipoles present in the structure.The frequency responses show three dynamic behaviors. At low frequencies (<10Hz), we observed an ionic diffusion, which is related to the ions movement of H+ through the structure. At high frequencies, (>10kHz) the response is due to defects into the oxide. Finally, at intermediate frequencies, the organic semiconductor response is identified and assigned to the permanent dipoles into the bulk. From these responses, an analytical model is developed and used to describe the dynamic responses. The semi-conductor behavior is described by the sum of a Debye and Cole-Cole function type. The analysis of the model parameters has highlighted the influence of permanent dipoles on the organic semiconductor permittivity. Finally, this model has been agreed on different samples based on pentacene and was applied to the Poly-3-hexylthiophene
Temga, Temga. "Mouvement et piégeage des charges électriques dans un matériau non-conducteur anisotrope : Application au rutile (TiO2)." Ecully, Ecole centrale de Lyon, 2004. http://bibli.ec-lyon.fr/exl-doc/ttemga.pdf.
Non-conductive materials and particularly solid insulators have a capacity to trap electric charges under certain conditions. The characterization of the trapping mechanisms achieved by the space charge physic, which describes not only trapping and conduction mechanisms of electric charges but also the condition of the stability and relaxation of the charges distribution. In this report, the trapping mechanisms of electric in a wide band gap semi-conductor material, are studied by the Scanning Electron Microscopy Mirror Effect. The studies have shown that electric charges diffuse, with a great leakage surface current. The high value and the anisotropy of the dielectric constant induces respectively a screening effect and an anisotropy of the distribution of trapped charges (elliptical or circular, mirors images). From the fundamental point of view, an appropiate analytical model is propose to take into account these new caracteristics
Bergerot, Laurent. "Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GRENI003/document.
Transparent electronic is currently limited by the lack of a really performant p-type transparent conducting oxide (TCO), which makes the elaboration of a transparent p-n junction challenging. Cuprous oxide Cu2O is a promising p-type TCO, but its optical transmittance in the visible spectrum is limited by its relatively low band gap (2.1 eV). In this thesis, we aim at increasing this value. To achieve that, we explore MOCVD as the growth method for strontium and calcium doping of cuprous oxide. According to ab-initio calculations performed at Tyndall Institute in Cork, doping with these elements is supposed to increase the band gap of Cu2O. In chapter I, we introduce the context of this thesis. After explaining the required conditions that a material must fulfil to be a p-type TCO, we present the state of the art of Cu2O. In chapter II, we present all the techniques used in this work, from the elaboration (MOCVD, thermal annealing) to characterization (SEM, TEM, AFM, XRD, FTIR, Raman spectroscopy, XPS, UV-vis-NIR spectroscopy, 4 point probe and Hall effect measurement). In chapter III, our objective is to synthesize pure, undoped Cu2O thin films. We explore the influence of the MOCVD parameters on the films composition and morphology. We get homogenous films on Si/SiO2 substrates, while we get heterogeneous films with un-deposited parts on silicon substrate. In addition, we show the risk to get the metallic copper phase when precursor concentration is high, oxygen partial pressure is low, and/or temperature is high. This enables us to determine the optimal deposition conditions. Starting from those optimal conditions, we study the influence of strontium doping on the functional properties of the films (resistivity, band gap and visible light transmittance) in chapter IV. A decrease of resistivity was observed with strontium doping. While undoped films show resistivity values of 103 Ω.cm or more, films doped from 6 to 15% strontium show resistivity values of about 10 Ω.cm. P-type conductivity was confirmed through Hall effect measurements, with a mobility close to 10 cm2.V-1.s-1 and a charge carrier density of about 1016 cm-3. The large difference between this carrier density and the Sr concentration can be linked with the presence of a strontium carbonate and fluoride contamination that was detected by FTIR and XPS. The exact influence of those impurities is not well known. In addition, no significant variation of optical properties was observed, the band gap remained close to 2.4 eV and average transmittance in the 500-1000 nm range was about 55%. Similar tendencies were observed for calcium doping, addressed in chapter V. Calcium doping showed the particularity of leading to the presence of cavities localized at the substrate/Cu2O interface, for a high dopant concentration and under UV assistance. Eventually, we performed thermal annealing on some samples, doped and undoped, in chapter VI. For undoped samples, it allowed to decrease resistivity in the 10-100 Ω.cm range. For doped samples, it allows samples showing initial resistivity of about 10 Ω.cm to decrease it to 1 Ω.cm. No impact of thermal annealing on sample morphology or composition was observed. In this thesis, we successfully established the effects of Sr or Ca doping, which lead to a significant decrease of the resistivity without impact on the optical properties, unlike what was predicted by the ab initio calculations. We were thus able to improve the p-type transparent Cu2O thin films properties
Nguyen, Duc-Tuong. "Utilisation d’un oxyde comme couche tampon à l’interface électrode/semi-conducteur organique dans une cellule photovoltaïque." Nantes, 2013. http://archive.bu.univ-nantes.fr/pollux/show.action?id=ee999c44-b1be-41e0-8376-9366df9762a7.
This work involved the use of an oxide as the buffer layer at the electrode / organic semiconductor interface in a photovoltaic cell in order to increase the efficiency and lifetime. Currently the efficiency of organic solar cells is restricted by the high potential barrier at the electrode / semiconductor contact and inefficiencies in the transport of electric charges to the electrodes. Our study focuses on the optimization of NiO thin films deposited by reactive sputtering DCMS and HIPIMS. We have shown that the discharge conditions such as pressure, power and percentage of reactive gas play an important role on the properties of NiO thin films. The films were well crystallized with a preferential orientation (111) or (200) related to the sub-stoichiometric in oxygen or nickel. The deviation from stoichiometry leads to an increase of the conductivity but also to a decrease of the transmittance. After annealing processing, these films became transparent whatever their initial composition while maintaining a preferred orientation which is representative of their initial oxygen content. For NiO thin films deposited by HIPIMS we have proved that it was possible to precisely control the amount of oxygen in our films by varying the pulse width but also possible to adjust the optical gap from 3. 28 eV up 4. 18 eV. Then we have shown that by introducing a thin layer of NiO at the ITO / Organic semi-conductor interface, the performance and the lifetime of organic solar cells could be improve by 3 and more than 17 times respectively. Finally, we optimized electrical and optical properties of multilayer structures MoO3/Ag/MoO3 that could eventually replace the ITO by a structure MoO3 (20 nm) / Ag (10 nm) / MoO3 (35 nm)
Ndilimabaka, Hervé Maurice. "Etude de l'oxyde magnétique semi-conducteur Fe2-xTixO3±δ : du contrôle de l'interaction d'échange à la polarisation de spin." Versailles-St Quentin en Yvelines, 2008. http://www.theses.fr/2008VERS0022.
This thesis is based upon the study of physical properties, in thin films (70 double-exchange type transition with an easy axis being out of plan and magnetoresistance phenomenon are observed around T~110K
Chehadi, Zeinab. "Nanostructures hybrides Au/Semi-conducteur : investigation des effets plasmoniques en catalyse sous lumière visible." Thesis, Troyes, 2017. http://www.theses.fr/2017TROY0016/document.
The excitation of Localized Surface Plasmon Resonance (LSPR) of Gold NanoParticles (GNPs) can give many physical effects such as near-field enhancement, heat generation and hot electron injection, which have been investigated in many chemical transformations. In that context, the plasmonic photocatalysis based on electron transfer from GNP to a semi-conductor has been proposed. However, few studies are focused on the influence of LSPR features and the respective contribution of its local effects (thermal and electronic) on the photocatalytic activity. These issues are addressed herein through 3 catalytic reactions. First, the efficient and selective oxidation of glycerol in the presence of supported GNPs is demonstrated under laser irradiation and without any external source of heat, thanks to the local heat generation and hot electron transfer. The respective contributions of these effects is further investigated in plasmonic photocatalysis by following the degradation of Bisphenol-A. Our results show that GNP plays a major role through hot electron transfer but also as a nano-source of heat that accelerates the reaction and leads to a fast and total elimination of this endocrine disruptor. Finally, an optical set-up is developed for studying the plasmonic photocatalysis at the nanoscale. For this, a hybrid system of GNPs coupled to a TiO2 nanofilm is realized by laser nanostructuring. Our investigations show that photocatalytic activity is correlated to the LSPR (size and shape of GNPs, hot spots). These results open the way for exploiting valuable and industrial reactions under solar light
Temga, Temga Treheux Daniel. "Mouvement et piégeage des charges électriques dans un matériau non-conducteur anisotrope Application au rutile (TiO2) /." [S.l.] : [s.n.], 2004. http://bibli.ec-lyon.fr/exl-doc/ttemga.pdf.
Koussi-Daoud, Sana. "Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066505/document.
The objective of this thesis was the electrochemical deposition (ECD) of p-type semiconductors forthe fabrication of p-Dye Sensitized Solar Cells (p-DSSCs). The electrodeposition method remained unexploredfor the p-DSSC applications. The best conditions for ECD of nickel oxide layers with a controlled thickness havebeen defined. Nickel oxide has been deposited in water medium, in ethanol, in dimethyl sulfoxide (DMSO)medium and in a mixture of DMSO/water solvent. The layers have been characterized by XRD, Ramanspectroscopy, SEM, optical measurements… then have been tested as a photocathode in p-DSSCs. The cuprousoxide (Cu2O) electrodeposition in an aqueous bath has also been investigated. The photovoltaic efficiency of thevarious prepared layers has been evaluated in p-DSSCs. We have also prepared inverse opal organized structureswith a perfectly defined macropore organization and size using a macrosphere polystyrene template. Finally, wehave explored the ECD of a copper delafossite CuFeO2 in DMSO medium
Bomers, Mario. "Fonctionnalisation de surface de résonateurs plasmoniques à base de semi-conducteur III-V pour la spectroscopie vibrationnelle exaltée." Thesis, Montpellier, 2018. http://www.theses.fr/2018MONTS013/document.
This thesis deals with the surface functionalization of nanostructured plasmonic III-V semiconductors for surface-enhanced vibrational spectroscopy relevant to identify minute amounts of analyte molecules.The first chapter outlines the theoretical foundations of surface-enhanced vibrational spectroscopy based on plasmonics. Comparing the plasmonic properties of the degenerate semiconductor InAs(Sb):Si and of metals, here gold and gallium, it is found that the degenerate semiconductor is especially suited for surface-enhanced infrared (SEIRA) spectroscopy and that gallium with its plasmonic potential in the UV-VIS range is apt for surface-enhanced Raman spectroscopy (SERS). Both alternative plasmonic materials theoretically outperform gold in their respective spectral ranges. Nevertheless, gold and its chemical inertness remain interesting for enabling plasmonic enhanced vibrational spectroscopy in different chemical environments. The influence of aqueous environments on the material properties of III-V semiconductors is addressed in the second and in the third chapter. It is found that InAs(Sb):Si is chemical stable in water, but GaSb is not. A GaSb/InAsSb:Si compound layer structure was used to demonstrate that the depletion of antimony and the incorporation of oxygen at the GaSb-water interface transform 50 nm of crystalline GaSb to a gallium oxide in less than 14 hours. The gallium oxide has a mid-IR refractive index in the order of n=1.6 and thus less than half of the value of the mid-IR refractive index of GaSb. This change in refractive index upon oxidation can be exploited to blue-shift the localized plasmonic resonance of InAsSb:Si gratings on GaSb-substrates in the range from 5 µm to 20 µm by pedestal formation.In Chapter 4, the controlled chemical bonding of organic molecules to the approximately 3 nm thin native oxide layer of III-V semiconductor surfaces by phosphonic acid chemistry is presented. This paves the way for plasmonic enhanced all-semiconductor mid-IR biophotonic applications. In chapter 5, two different, but equally successful strategies to combine III-V based plasmonic resonators with microfluidic circuits are described. These results demonstrate that lab-on-the-chip applications based on III-V semiconductors are possible. Finally, the possibility to integrate plasmonic Gallium nanoparticles onto the III-V material platform for a potential combination of SEIRA and SERS applications is presented in chapter 6
Sanchez, Jean-Baptiste. "Conception d'une micro-colonne chromatographique couplée à un capteur à oxyde semi-conducteur : application à la détection sélective de HF." Besançon, 2005. http://www.theses.fr/2005BESA2033.
Tsin, Fabien. "Développement d'un procédé sur grande surface d'électrodépôt d'oxyde de zinc comme contact avant transparent et conducteur de cellules solaires à base de Cu(In,Ga)Se2." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066311/document.
Cu(In,Ga)(S,Se)2 (CIGS) thin films based solar cells are a promising technology for high efficiency energy conversion. A window layer completes the stack of the cell. It is commonly constituted by an intrinsic and aluminum doped bi-layer of zinc oxide (ZnO) deposited by magnetron sputtering, an expensive vacuum process. Alternative processes, using low cost and atmospheric techniques, have been developed in order to reduce the costs. The aim of this work was to achieve a functional window layer of ZnO by a photo-assisted electrodeposition process on large scale substrates of CIGS/CdS in aqueous medium and replace the sputtered one. For this purpose, several studies have been carried out in order to determine the optoelectronic properties such as doping level and mobilities of the electrodeposited ZnO and optimize the deposition process. Firstly, the effect of three different electrolytes on the zinc oxide properties and doping has been studied on metallic substrate: chloride medium (Cl-), perchlorate medium (ClO4-) and a mixed medium of perchlorate with boric acid (H3BO3). Then, electrochemical synthesis of zinc oxide as window layer has been performed on CIGS/ CdS substrates. This study allowed to establish the need to synthesize an in situ seed layer which promotes the growth and the compactness of the final layer of zinc oxide. This two-step method has led to the achievement of high photovoltaic performances on large scale with promising efficiencies up to 14.3 % for a solar cell made entirely by atmospheric processes
Longnos, Florian. "Etude et optimisation des performances électriques et de la fiabilité de mémoires résistives à pont conducteur à base de chalcogénure/Ag ou d'oxyde métallique/Cu." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT046.
Non-volatile memory technology has recently become the key driver for growth in the semiconductor business, and an enabler for new applications and concepts in the field of information and communication technologies (ICT). In order to overcome the limitations in terms of scalability, power consumption and fabrication complexity of Flash memory, semiconductor industry is currently assessing alternative solutions. Among them, Conductive Bridge Memories (CBRAM) rely on the resistance switching of a solid electrolyte induced by the migration and redox reactions of metallic ions. This technology is appealing due to its simple two-terminal structure, and its promising performances in terms of low power consumption, program/erase speed. Furthermore, the CBRAM is a memory technology that can be easily integrated with standard CMOS technology in the back end of line (BEOL). In this work we study the electrical performances and reliability of two different CBRAM technologies, specifically using chalcogenides (GeS2) and metal oxide as electrolyte. We first focus on GeS2-based CBRAM, where the effect of doping with Ag and Sb of GeS2 electrolyte is extensively investigated through electrical characterization analysis. The physical mechanisms governing the switching kinetics and the thermal stability are also addressed by means of electrical measurements, empirical model and 1st principle calculations. The influence of the different set/reset programming conditions is studied on a metal oxide based CBRAM technology. Based on this analysis, the programming conditions able to maximize the memory window, improve the endurance and minimize the variability are determined
Legrand, Alexandre. "Assemblages nanoporeux de type semi-conducteur/zéolithe/chromophore : étude de la (photo)réactivité." Thesis, Lille 1, 2012. http://www.theses.fr/2012LIL10134/document.
The synthesis of semiconductors nanoparticles (S-C) of TiO2 or ZnS in the porous volume of channels types zeolites like ferrierite (FER), ZSM-5, mordenite (MOR) and zeolithe constituted of cages like faujasite (FAU) have been implemented by cationic exchange between the charges compensator cations of zeolites and the different precursors of TiO2 (ammonium/potassium titanyl oxalate, TiCl3) and ZnS (Na2S + ZnCl2). The characterization of these new materials have been realized by diffuse reflectance infrared spectroscopy (DRIFT), XPS, XRD, diffuse reflectance UV-visible spectroscopy, high resolution transmission electron microscopy (HRTEM), and sorption isotherms. These complementary techniques underscore the presence of S-C in the surface as aggregate of spherical nanoparticles and inside of porous volume of zeolites with channels diameter higher than 0.56 Å (MOR and FAU). The potential use of these new systems to valorize light energy is evaluated by adsorption of probe molecule donor of electrons within the porous network. The electron transfer mechanisms taking place after the incorporation and (photo)ionization of trans-stilbene molecules are thus studied and compared to zeolites system without S-C. The results show the formation of long-lived charge separated states of whom the stability is linked to the nature of the new charge compensator cation, the zeolites morphology and the aluminum rate of the network. The presence of S-C is leading to an augmentation of the transient species lifetime which could be explained by a possible electrons transfer towards the S-C’s conduction band
Khan, Afzal. "Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P." Thesis, Grenoble, 2011. http://www.theses.fr/2011GRENI008/document.
Transparent conducting oxides (TCOs) as transparent electrodes in the form of thin film are used in a large number of applications such as solar cells, liquid crystal displays, touch screen etc. However, these technological applications of TCOs are still limited because of the availability of only n-type TCOs. For diverse technological applications synthesis of efficient p-type TCOs is of utmost importance. In p-type TCO category, copper oxides of delafossite structure (ACuO2) or SrCu202 structure show promising opto-electrical properties. In this PhD research work, MOCVD (Metal Organic Chemical Vapor Deposition) technique has been used for depositing thin films of SrCu2O2. However, pure and crystalline phase of SrCu2O2 was achieved after some annealing steps under oxygen and then under argon or only in nitrogen, with rapid heating and cooling rate. The measured electrical and optical properties are of the same order reported in various journals
Guillamet, Sébastien. "Réalisation d'un micro-écran OLED haute luminance." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT060.
This study focuses on the realization of a high brightness OLED micro-écran on silicon. The limited efficiency of White-OLED combined with color filters prevents the use of this technology in “see-through” applications. We propose a novel approach getting benefits from the optical micro-cavity effect in Top-Emitting OLED to generate colors without using color filters. Cavity modulations at a sub-pixel scale are realized by using a Transparent Conducting Oxide between the anode and the OLED.Following a step-by-step reasoning the work offers to follow all the phases of the realization of a prototype using this principle. In the first part, the technological steps of the processing of oxide cavities with a surface of 16µm² will be discussed. Then we will work on the development of a tandem OLED structure using both fluorescent and phosphorescent emitters optimized for micro-cavities. To this end optical simulation will be used. The two technological blocs will finally be put together to enlighten some issues specific for micro-écran technology and to give some clues to solve them
Tosoni, Olivier. "Conception, élaboration et intégration d'électrodes transparentes optimisées pour l'extraction des charges dans des dispositifs photovoltaïques." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-00955867.
Khan, Afzal. "Growth and characterization of P-type transparent conducting oxide thin films by MOCVD." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00582901.
Marcel, Corinne. "Etude et essai d'optimisation des propriétés électroniques de couches minces d'un semi-conducteur dégénéré : ITGO (oxyde d'indium dopé à l'étain et au germanium)." Bordeaux 1, 1998. http://www.theses.fr/1998BOR10507.
Bernos, Julien. "Elaboration de jonctions tunnel magnétiques et de jonctions métal/oxyde/semi-conducteur pour l'étude du transport et de la précession de spin d'électrons chauds." Thesis, Nancy 1, 2010. http://www.theses.fr/2010NAN10080/document.
Elaboration of magnetic tunnel junctions and of metal/oxide/semi-conductor junctions for the study of spin precession and transport propoerties of hot electrons
BERRADA-GOUZI, KHADIJA. "Spectroscopie vibrationnelle d'interfaces molecules ou atomes-metal, semi-conducteur et oxyde : application aux systemes alkylthiols et dialkylthiols-argent, r-alkyl anhydrides-alumine et hydrogene-silicium." Paris 7, 1992. http://www.theses.fr/1992PA077020.
Mollica, Fabien. "Optimization of ultra-thin Cu(In,Ga)Se2 based solar cells with alternative back-contacts." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066556/document.
In the past three years, record efficiency of Cu(In,Ga)Se2 (CIGS) based solar cells has improved from 20% up to 22.6%. These results show that CIGS absorber is ideal for thin-film solar cells, even if this technology could be more competitive with a lower manufacture cost. The fabrication of devices with thinner CIGS absorbers is a way to increase the throughput of a factory and to reduce material consumption. This PhD thesis aims to develop cells with a CIGS thickness below 500 nm instead of the conventional 2.0-2.5 µm. However, as reported in the literature, we observed a decrease in cell performance. We carefully analyzed this effect by the comparison between simulations and sample characterizations: it is attributed, on one hand, to a lack of light absorption in the CIGS layer and, on the other hand, to an increased impact of the back-contact (high recombination and low reflectivity). To resolve these problems, we demonstrated theoretically and experimentally that the use of an alternative back-contact, other than molybdenum, such as a transparent conducting oxide coupled with a light reflector, improves the cell efficiency. To achieve this result, an optimization of the CIGS deposition was necessary. Moreover, we proved that a porous oxide layer inserted between the CIGS and the back-contact limits the charge-carrier recombination and removes some parasitic resistance. Finally, an efficiency of 10.7% was achieved for a 480-nm-thick CIGS solar cell with a SnO2:F back-contact passivated with a porous Al2O3 layer
Valour, Arnaud. "Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S014/document.
Cette thèse fait suite à des travaux ayant permis, de manière non reproductible, la stabilisation de l'oxyde de zinc de type-p (p-ZnO:N) sur une période de plus de deux ans par décomposition de ZnO2 sous flux de NH3. L'objectif de ces travaux était de maîtriser de manière reproductible la synthèse de p-ZnO:N sous formes de poudre, puis de couche mince, dans l'optique de réaliser des homojonctions p-ZnO:N/n-ZnO ayant de potentielles applications dans le domaine de l'optoélectronique. Dans ce but, différents paramètres de la synthèse ayant permis initialement l'obtention de p-ZnO:N fortement lacunaire en zinc (20%) ont été étudiés sans aboutir de nouveau à la stabilisation du caractère-p. La formation in-situ d'impuretés NO3- mise en évidence conduit à une ambiguïté quant à l'origine du type-p dans notre matériau. Parallèlement, une nouvelle voie de synthèse a été mise en place, en utilisant l'approche colloïdale, permettant d'obtenir des nanocristaux de ZnO inférieurs à 10 nm facilement convertibles en nanoparticules de ZnO2 par simple traitement avec une solution diluée d'H2O2 à température ambiante. Le matériau final ZnO:N est obtenu après nitruration sous flux d'ammoniac à 250°C. Ces résultats ont été efficacement transposés à la réalisation de couches minces (CM) de ZnO:N par dip-coating, mais les mesures Mott-Schottky ont également révélé une conductivité de type-n pour tous les échantillons. Enfin, les résultats préliminaires des calculs théoriques menés en parallèle de cette thèse nous ont amenés à reconsidérer les conditions de synthèse pour favoriser l'insertion de NH3 / NH4+ lors de la préparation des échantillons dans la quête de p-ZnO:N
Rossignol, Sylvie. "Sur de nouveaux verres oxyiodes conducteurs de l' ion Ag+. Corrélations structures-propriétés de transport." Phd thesis, Université Sciences et Technologies - Bordeaux I, 1994. http://tel.archives-ouvertes.fr/tel-00139663.
Dugrenil, Benoit. "Réalisation d’un micro-écran OLED haute luminance." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT116.
This study focuses on the development of high brightness OLED microdisplays based on active matrix (AMOLED). Because these devices are used into near-to-eye (NTE) applications and more precisely « see through » optical systems, high luminances are required. Compared to conventional microdisplays, the high luminances expected are around ten times higher.In order to emit a white spectrum from a top-emitting OLED (TE-OLED), color filters are mandatory to generate the RGB primaries. Nevertheless, by using these filters, the luminance is dramatically reduced because of the light absorption. Therefore, to be free of the filters, a first study is dedicated to the modulation of the optical cavity of the OLED. In this case, the direct generation of the colors is provided by the variation of the TCO anode thickness.The cavity effect observed into the TE-OLED depends on the semi-transparent cathode. The selectivity of the related cavity represents the bottleneck for emitting broad white spectra. To improve the white emission, a second approach deals with the realization of a TCO cathode coupled with a metallic grid.The appropriated materials and deposition techniques were firstly investigated before the characterization of OLED using a transparent anode to modulate the cavity in one hand and a transparent cathode to increase the light emission in another hand. Optical simulations and electrical modelling were employed to highlight the main behaviors driving these OLED. Following a discussion about the strength and the weakness of each structure, some hints of improvement were given
Sandana, Eric Vinod. "SYNTHÈSE ET MAÎTRISE DE LA CROISSANCE DE NANOCRISTAUX : APPLICATIONS AUX COMPOSANTS A BASE DE SEMI-CONDUCTEURS A GRANDE BANDE INTERDITE." Phd thesis, Ecole Polytechnique X, 2011. http://pastel.archives-ouvertes.fr/pastel-00640652.
Vibhu, Vaibhav. "Stabilité et vieillissement des études de nickelates base praséodyme comme cathodes pour oxyde solide piles à combustible." Thesis, Bordeaux, 2016. http://www.theses.fr/2016BORD0017/document.
This PhD work is dedicated to stability and ageing studies of Praseodymium based nickelates ascathodes for Solid Oxide Fuel Cells (SOFCs). With this respect Ln2NiO4+δ (Ln=La, Pr or Nd)compounds with the K2NiF4 type structure act as alternative cathode materials for IT-SOFC due totheir mixed ionic and electronic conductivity (i.e. MIEC properties). Pr2NiO4+δ shows excellentelectrochemical properties at intermediate temperature (i.e. low polarization resistance Rp value, Rp= 0.03 Ω.cm² at 700 °C), while La2NiO4+δ exhibits higher chemical stability. So, the properties ofLa2-xPrxNiO4+δ nickelates were investigated with the aim to find best compromise between chemicalstability and electrochemical performances. After synthesis, the physical and chemical properties aswell as their transport and electrochemical properties have been determined. Measurements of thepolarization resistance of symmetrical half-cells have been carried out by impedance spectroscopy.Then, the chemical stability and the electrochemical performance of the materials have been studiedfor duration up to one month. As an interesting point, even after complete dissociation of Pr2NiO4+δinto PrNiO3-δ,Pr4Ni3O10+δ and Pr6O11, the polarization resistance does not show significant change.So finally, two new materials PrNiO3-δ and Pr4Ni3O10+δ were investigated as SOFCs cathodeshowing very promising results for Pr4Ni3O10+δ in symmetrical cell (Rp (Pr4Ni3O10+δ) = Rp(Pr2NiO4+δ) = 0.15 Ω.cm² à 600 ° C) and complete cell (1.6 W.cm-2 at 800 °C)
Delcroix, Pierre. "Etude à l'échelle nanométrique par sonde locale de la fiabilité de diélectriques minces pour l'intégration dans les composants microélectroniques du futur." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00822926.
Mollica, Fabien. "Optimization of ultra-thin Cu(In,Ga)Se2 based solar cells with alternative back-contacts." Electronic Thesis or Diss., Paris 6, 2016. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2016PA066556.pdf.
In the past three years, record efficiency of Cu(In,Ga)Se2 (CIGS) based solar cells has improved from 20% up to 22.6%. These results show that CIGS absorber is ideal for thin-film solar cells, even if this technology could be more competitive with a lower manufacture cost. The fabrication of devices with thinner CIGS absorbers is a way to increase the throughput of a factory and to reduce material consumption. This PhD thesis aims to develop cells with a CIGS thickness below 500 nm instead of the conventional 2.0-2.5 µm. However, as reported in the literature, we observed a decrease in cell performance. We carefully analyzed this effect by the comparison between simulations and sample characterizations: it is attributed, on one hand, to a lack of light absorption in the CIGS layer and, on the other hand, to an increased impact of the back-contact (high recombination and low reflectivity). To resolve these problems, we demonstrated theoretically and experimentally that the use of an alternative back-contact, other than molybdenum, such as a transparent conducting oxide coupled with a light reflector, improves the cell efficiency. To achieve this result, an optimization of the CIGS deposition was necessary. Moreover, we proved that a porous oxide layer inserted between the CIGS and the back-contact limits the charge-carrier recombination and removes some parasitic resistance. Finally, an efficiency of 10.7% was achieved for a 480-nm-thick CIGS solar cell with a SnO2:F back-contact passivated with a porous Al2O3 layer
Erades, Laurent. "Nanoparticules d'oxydes semi-conducteurs : synthèse, caractérisation et application à la détection sélective de gaz." Toulouse 3, 2003. http://www.theses.fr/2003TOU30031.
Baudon, Sylvain. "Etude de l'influence des contraintes appliquées sur l'évolution des propriétés diélectriques des couches minces isolantes dans les composants semi-conducteurs de puissance." Phd thesis, Université Montpellier II - Sciences et Techniques du Languedoc, 2013. http://tel.archives-ouvertes.fr/tel-01001950.
Chicot, Gauthier. "Effet de champs dans le diamant dopé au bore." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01062250.
Charpentier, Coralie. "Investigation of deposition conditions and annealing treatments on sputtered ZnO:Al thin films : Material properties and application to microcristalline silicon solar cells." Phd thesis, Ecole Polytechnique X, 2012. http://tel.archives-ouvertes.fr/tel-00796955.
Ango, Jean-Paul. "Electrooxydation du D-Sorbitol sur électrodes métalliques (Pt, Au) : comparaison avec la photooxydation aux interfaces semi-conducteur (TiO(2) / électrolyte." Poitiers, 1989. http://www.theses.fr/1989POIT2261.
Channam, Venkat Sunil Kumar. "Synthesis of strongly correlated oxides and investigation of their electrical and optical properties." Thesis, Toulouse, INPT, 2017. http://www.theses.fr/2017INPT0075/document.
Strongly correlated oxides are studied widely for the host of unique applications, such as hightemperature superconductivity, colossal magneto resistance, exotic magnetic, charge and orbital ordering, and insulator-to-metal transitions. Transitional metal oxides which form the majority of the correlated oxide systems and oxides of Vanadium, especially VO2 and V2O5 are the two most favourite systems among researchers for several applications. In this thesis, the growth and characterization of VO2 and V2O5 are discussed along with a special focus on the optical property, especially thermochromic properties. Traditionally SMT behaviour and Infrared reflectively was the focus area for VO2 research, and its only until recently that VO2 is being treated as a much more complex system and investigated as highly responsive naturally disordered metamaterial near the phase transition temperature where the material exhibits semiconducting and metallic phase co-existence. Since each phase of VO2 has a distinct optical and electrical properties, controlling the extent of phase transitions by accurate temperature modulation, enables exploitation of the material for new properties like emissivity modulation in the NIR region and for creating IR visible reversible and rewritable patterns. V2O5 is traditionally seen as a high TCR material and regarded as material of choice for application ranging from catalysis, gas sensors to lithium batteries. In this study, however we focus on the optical properties of the material, especially the visible range thermochromic nature of V2O5 coatings synthesised by oxidative annealing of MOCVD grown VOx coatings. The impact of doping and selective oxygen vacancy generation on the thermochromic property are discussed
Tchiffo, Tameko Cyril. "Croissance et propriétés de couches minces d’oxydes pour microsources d’énergie." Thesis, Orléans, 2016. http://www.theses.fr/2016ORLE2068/document.
This thesis concerns the realization of oxide thin films and the study of their properties for photovoltaic or thermoelectric devices. In the first part, the TiOx properties are studied for use as an optically active transparent conductive oxide to put in front of the PV cells or, as optical coupling layer to interpose between the metal reflector and the absorbent layer of a PV cell. The layers are deposited by pulsed laser deposition (PLD). This method allows to get stoichiometric or oxygen deficient layers by controlling the oxygen partial pressure during the growth. The layers are doped with Nb to enhance electrical conductivity and/or with Nd for the conversion of Ultra-Violet photons to Near Infra-Red photons. Insulating and transparent layers, luminescent layers or conducting and absorbent layers are obtained. The TiO₁,₄₅₋₁,₆₀ films show polaronic or bipolaronic conductivity and exhibited the jump of electrical conductivity with jump height and temperature depending on the nature of the dopants. A second part of the manuscript concerns thermoelectricity in which the properties of cobalt calcium oxide are modulated for an efficient conversion of low temperature gradients centered at 300-365K. The control of the oxygen concentration of films allows to obtain the polymorphic phases CaxCoO₂,Ca₃Co₄O₉ and Ca₃Co₄O₆,₄₋₆,₈ having metallic or semiconducting behavior depending on the deposition temperature. The Ca₃Co₄O₆,₄₋₆,₈ films show high Seebeck coefficients (S) ≥ 1 000 μV/K and low electrical resistivity (3.8 to 6 mΩ.cm). Such interesting values have to be confirmed by additional experiments in order to be used as thermoelectric films
Limelette, Patrice. "Propriétés de transport de systèmes électroniques fortement corrélés." Phd thesis, Université Paris Sud - Paris XI, 2003. http://tel.archives-ouvertes.fr/tel-00003545.
Foissac, Romain. "Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT047/document.
Integration of High-k dielectrics in gate oxides of MOS raised new issues concerning the reliability of futur technology nodes. The constant miniaturisation of devices leads to thinner gate oxides, making their electrical caracterisation more complex at the device scale. To solve this problem, an atomic force microscope in conductive mode under ultra high vacuum can be used thanks to the readuce contact area between the tip and the sample which allow a drastic decrease of the tunneling current and thus the study of the degradation and the dielectric breakdown of ultra-thin oxides. The systematic comparaison of the TDDB distributions obtained on the High-k gate oxide of the 28nm technology node on one side and obtained on the Interfacial layer alone revealed that the failure probability of High-k oxides is governed by the failure probability of each layer present in the stack. This allow to give an extrapolation law of the High-k gate oxide lifetime as a function of the applied voltage and the electrode area and to predict the failure statistic of the 28nm tehcnology node. The impact of voltage pre-stress with a microseconde range of duration on the TDDB and VBD distributions of both single layer and High-k gate oxides is given is the manuscript. The results are then interpreted by an invasive degradation nucleating from an interface during a stress and leading to a local thinned oxide. Pre-breakdown negative differential resistance have been studied and modeled for several oxide thickness, using a growing mecanism of the elctrical degradation. An analytic expression linking the growth caracteristic time of the filament and the mean time to breakdown observed on the statistical distributions has then been given. Finally, C-AFM measurements developped in this work has been extended to MIM structures used for oxide resistive random access memories (OxRAM). A self healing has been observed at the nanometric scale for these samples
Lachaume, Raphaël. "Contribution à la caractérisation électrique et à la simulation numérique des cellules photovoltaïques silicium à hétérojonction." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT028/document.
By combining the advantages of thin-films and crystalline silicon (c-Si), the silicon heterojunction solar cell technology (HET) achieves a better cost-performance compromise than the technology based only on c-Si. The aim of this thesis is to improve the understanding of the physical mechanisms which govern the performance of these cells by taking advantage of specific characterization and simulation skills taken from microelectronics. Our study focuses on the front-stack of the n type cell composed of thin layers of indium tin oxide (ITO) and hydrogenated amorphous silicon (a-Si:H). We begin with a theoretical and experimental study of the conductivity of a-Si:H layers as a function of temperature, doping concentration and bulk defects density. It is important to properly take into account the dopant/defect equilibrium of these layers but we also show that the work function of the electrodes in contact, such as the ITO, can strongly influence the Fermi level in the nano-films of a-Si:H. Then, we evaluate seven characterization techniques dedicated to the work function extraction in order to identify the most suitable one for studying degenerate semiconductors such as the ITO. We particularly show the interest of using original microelectronics techniques such as capacitance C(V), leakage current I(V) and internal photoemission (IPE) measurements on ITO/bevel oxide/silicon test structures. We clearly demonstrate that the ITO bulk properties can be optimized, yet the interfaces have a major influence on the extracted values of the effective work function (EWF). A good overall consistency has been obtained for C(V), I(V) and IPE measurements on a silicon dioxide bevel (SiO2) ; the extracted values enabled us to explain experimental results concerning the optimization of HET cells. We show that the open circuit voltage (Voc) of these devices is finally barely sensitive to work function, unlike the Fill Factor (FF). This is due to the a-Si:H layer. The more it is doped, defective and thick, the more it is able to screen the electrostatic variations of EWF. Thus, EWF must be sufficiently high to be able to reduce the p a-Si:H layer thickness and, in turn, to gain in short-circuit current (Jsc) without losing either in FF or Voc. Finally, we successfully applied this methodology to other types of transparent conductive oxides (TCO) differing from ITO. The best candidate to replace ITO must not only have a high optical transparency, be a good conductor and have a high EWF, but we must also pay close attention to the possible interface degradations caused by the deposition techniques
Sixou, Bruno. "Proprietes de transport dans les polymeres conducteurs electroniques." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10271.
Curtet, Jean-Pierre. "Structure et micro-structure d'une nouvelle famille de copolyimides alternés à conduction mixte." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10144.
Tousch, Corentin. "Incorporation de nanotubes de carbone dans les couches d’oxyde formées par le procédé d’oxydation par plasma électrolytique de l’aluminium en vue d’élaborer des couches d’oxyde conductrices." Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0282.
The most common method to enhance the surface properties of aluminum is acid-based anodization, forming a protective layer of aluminum oxide on the metal surfaces. This imparts improved wear and corrosion resistances due to alumina's high hardness and chemical stability. However, aluminum oxide is a strong electrical insulator, substantially increasing contact resistance in anodized components. Traditional electrolytic surface treatments involving nickel, cadmium, and chromium maintain electrical conductivity but involve heavy metal-containing electrolytes, including carcinogenic hexavalent chromium, a substance facing European Union import restrictions. Consequently, alternative treatments are sought, leading to electrolytic plasma oxidation. This electrochemical conversion process differs from acid anodization, using higher current/voltage and dilute basic electrolytes. The resulting oxide layer is porous, enabling the incorporation of solid particles. These particles are dispersed in the electrolyte and gradually incorporated within the growing oxide layer. By adding conductive particles it is conceivable to create percolation paths, forming a composite aluminum oxide-particle layer that protects the underlying aluminum while maintaining low electrical contact resistance.Carbon nanotubes were chosen for their excellent electrical conductivity and high form factor, enabling percolation at low volume concentration. The study aims at incorporating carbon nanotubes into the oxide layer generated during aluminum plasma electrolytic oxidation to produce conductive oxide layers. Experimental investigations establish fundamental insights into incorporation mechanisms, impact of electrical parameters, the influence of carbon nanotubes on the process, and coating properties, especially electrical behavior. Results reveal that carbon nanotubes accelerate layer growth and increase oxide coating porosity. High concentrations yield excessively porous layers with defects (cracks, delamination), compromising layer integrity. Carbon nanotubes in both the electrolyte and the growing oxide substantially affect the process. Transition to "soft" micro-discharge regime shifts earlier with higher nanotube concentrations under suitable electrical conditions. Excessive nanotube concentrations inhibit the process, preventing oxide layer formation. "Arc" regime treatments favor nanotube incorporation in the oxide compared to "soft" regime treatments. Although carbon nanotube incorporation significantly enhances oxide layer electrical conductivity, the percolation threshold isn't reached, and layers remain insulating for now. Despite this, the results are highly promising, prompting further research to optimize electrical conductivity in these composite coatings, building upon the findings reported here
Adohi, Bibi J. P. "Claquage électrique de films d'oxyde de polyphénylène réalisés par voie électrochimique." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0066.
Soumahoro, Ibrahima. "Elaboration et caractérisation des couches mines de ZnO dopées au molybdène et l'ytterbium, pour des applications photovoltaïques." Thesis, Strasbourg, 2012. http://www.theses.fr/2012STRAE016.
In view of improving the cells of the future, we have elaborated respectively doped ZnO thin films by Mo spray pyrolysis method and doped Yb by sputtering. Whatever the technique used all these layers are polycrystalline, transparent with smooth surfaces. In addition, the Hall effect measurements show an n-type conductivity in the case of two systems studied. On thin films of ZnO doped Mo, the electrical properties are potentially interesting for photovoltaic applications as additional dopant in addition to rare earths. As for thin films ZnOYb, PL measurement results have clearly demonstrated an optical coupling between ZnO and Yb with the observation of a photon infrared photon UV incident. This suggests that the concept of "down-shift" is likely to be validated
Baba, Kamal. "Développement et optimisation du procédé Spray Plasma de dépôt de couches minces d'oxyde de zinc : application aux cellules photovoltaïques." Paris 13, 2013. http://scbd-sto.univ-paris13.fr/secure/edgalilee_th_2013_baba.pdf.
The aim of this work is the development and the optimization of a new method for ZnO thin film deposition for photovoltaic applications. The principle of this so called Spray Plasma process, is the injection of a spray of micro droplets of an aqueous solution of zinc in a low pressure plasma reactor. Under the effect of evaporation and Ar/O2 plasma reactivity, the precursor is converted to zinc oxide thin films on the substrate surface at controlled temperature. Chemical transformation involves oxygen and OH radicals, electrons and excited species from oxygen or argon. The experimental characterization of the discharge by emission spectroscopy and Langmuir probe allowed the plasma parameters to be determined such as electron temperature (2-4 eV), gas temperature (400 K) and the density of ions. In parallel, two models were developed: a hydrodynamic model to calculate the droplet size and temperature evolution in the reactor, and a kinetic model to calculate the plasma parameter evolution. The characterization of the films by different techniques (XRD and SEM) revealed nanostructured films with a typical deposition rate of 90 nm/min. Control of the deposition parameters such as precursor’s concentration and oxygen ratio allows the control of crystal orientation, thickness, surface roughness and grain size of the deposited films. We studied the role of each parameter on film growth and their properties and correlated these results with the characteristics of the plasma
Séverin-Fabiani, Tatiana. "Imagerie de photoluminescence synchrotron pour l’étude de matériaux anciens semi-conducteurs." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS093/document.
Synchrotron photoluminescence imaging has emerged as a promisingmethod to study heterogeneous materials,composed of inorganic and organic compounds as those in ancient materials sciences.During this Ph.D., we have further developed the existing photoluminescencemicroscopy set-up of the DISCO beamline at the SOLEIL synchrotron, to identify new photoluminescence markers that allow characterizing physico-chemical processes taking place during the manufacturing or alteration processes of ancient materials. This work led to the development of an optimized multi-spectral microscopy set-up. The optical development of an homogeneous illumination, the optimisation of detection and the radiometric calibration of the set-up led to quantitative photoluminescence images. This set-up has been optimized to respond at best to archaeological and cultural heritage questions with a topological, chemical, electronic and crystalline analysis. Those new instrumental developments were tested on real systems made of wide-bandgap semiconductors. By studying historical artists' pigments composed of zinc oxide (ZnO), we have shown that the photoluminescence properties allow discriminating homogeneous pigments at macro-scale from the heterogeneity oh the photoluminescence response at the grain scale. Two copperbasedarchaeological artefacts and a bronze slag were studied. Particularly, the study of cuprous oxide (Cu2O) pointed out the considerable interest of multi-spectral photoluminescence analysis to retrieve the operational sequence of metallurgy and to provide new information for a better understanding of alteration processes.This work demonstrated the potential of this new methodology and the interest to develop such a method for ancient materials, that are characterized by a strong heterogeneity at successive scales
Chicot, Gauthier. "Effet de champ dans le diamant dopé au bore." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-00968699.
Magnan, Romain. "Oxyde transparent conducteur de ZnO : V à partir d'une cible de nanoparticules : de l’ablation par laser pulsé à un procédé de décharge à barrière diélectrique double fréquence à pression atmosphérique Transparent and conductive vanadium doped zinc oxide thin films by pulsed laser deposition from different targets Atmospheric pressure dual RF-LF frequency discharge: Influence of LF voltage amplitude on the RF discharge behavior Atmospheric pressure dual RF-LF frequency discharge: transition from α to α-γ-mode." Thesis, Perpignan, 2020. http://www.theses.fr/2020PERP0008.
This thesis jointly supervised by France and Canada aims to develop an innovative method for the development of thin nanocomposite layers of ZnO: V, based on the sputtering and deposition of ZnO: V nanoparticles (NPs) using Double Frequency Dielectric Barrier Discharges (DBDs). This deposition method aims to reduce the cost of production by using nanoparticles synthesized by the sol-gel method and DBD in a configuration allowing the deposition of thin films continuously at atmospheric pressure. The work took place in three phases:- The study of TCO obtained by pulsed laser deposition from a target of NPs of ZnO: V (1% at.) and metal targets of ZnV. The lowest resistivity (4 x 10-4 Ω.cm) is observed for the deposits made at 250 ° C from a Zn: V target (3% at.) While the best optical properties are those of a quasi-amorphous thin layer obtained at 20 ° C from the NPs target of ZnO: V. These thin films have a transmission of 40% in UV at 250 nm, 90% in the visible and 80% in the PIR at 2500 nm) with a resistivity of 6 x 10-2 Ω.cm.- Research and optimization of a DBD plasma source to sputter ZnO: V NPs in a configuration compatible with the deposition of controlled thin films. The approach consisted in increase the flow and energy of the ions at the cathode by applying, on one of the electrodes, a radiofrequency voltage (5 MHz) which generates a high density of ions (~ 2 x 1011 / cm3) and on the other electrode a low frequency voltage (50 kHz) in order to transport the ions to the cathode. The first step was to understand the physics of the DBD RF-BF by coupling the optical characterization of the discharge and the 1D fluid modeling. When the LF voltage increases, the initially RF discharge in the α regime switches to the α-γ regime for 1/5 of the LF cycle. The results show that in γ regime the discharge is self-sustaining in the sheath and the flow of ions at the cathode is multiplied by a factor of 7 while their energy increases by a factor of 4. The experimental study shows that when an NPs target interacts with an RF-BF DBD, NPs are brought into flight.- The design and testing of a DBD reactor configuration comprising 2 successive plasma zones: the first to launch the NPs of a target, the second to deposit the NPs on a substrate. The latter is based on a double frequency BF-LF DBD obtained by applying a 50 kHz voltage which generates electrons to charge the NPs and a 1 kHz voltage which we know can ensure the transport of charged NPs from the volume to surfaces. The feasibility was shown by the observation of NPs on the substrate