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Relevant bibliographies by topics / Oxide nitride stacks

Academic literature on the topic 'Oxide nitride stacks'

Author: Grafiati

Published: 4 June 2021

Last updated: 28 January 2023

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Dissertations / Theses
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Journal articles on the topic "Oxide nitride stacks"

1

Levin, Igor. "Nanoscale Compositional Characterization of Silicon Oxide-Nitride-Oxide Stacks." Microscopy and Microanalysis 8, S02 (August 2002): 1178–79. http://dx.doi.org/10.1017/s1431927602107768.

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Huang, Tiao‐Yuan, Donald J. Coleman, and James L. Paterson. "LPCVD Oxide/LPCVD Nitride Stacks for Interpoly Dielectrics." Journal of The Electrochemical Society 132, no. 6 (June 1, 1985): 1406–9. http://dx.doi.org/10.1149/1.2114133.

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Mao, L. F., and Z. O. Wang. "Tunneling currents through lightly nitride silicon dioxide/oxide stacks." physica status solidi (a) 204, no. 3 (March 2007): 784–90. http://dx.doi.org/10.1002/pssa.200622325.

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Ioannou-Sougleridis, V., P. Dimitrakis, V. Em Vamvakas, P. Normand, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, M. Perego, and M. Fanciulli. "Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation." Microelectronic Engineering 84, no. 9-10 (September 2007): 1986–89. http://dx.doi.org/10.1016/j.mee.2007.04.068.

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Levin, Igor, Mark Kovler, Yakov Roizin, Menachem Vofsi, Richard D. Leapman, Gary Goodman, Norio Kawada, and Munabu Funahashi. "Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon." Journal of The Electrochemical Society 151, no. 12 (2004): G833. http://dx.doi.org/10.1149/1.1811594.

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Ioannou-Sougleridis, V., P. Dimitrakis, V. Em Vamvakas, P. Normand, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, M. Perego, and M. Fanciulli. "Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks." Applied Physics Letters 90, no. 26 (June 25, 2007): 263513. http://dx.doi.org/10.1063/1.2752769.

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Drown, J. L., S. M. Merchant, M. E. Gross, D. Eaglesham, L. A. Giannuzzi, and R. B. Irwin. "Comparison of Sputtered Titanium Nitride on Silicon Dioxide and Aluminum-Alloy Thin Films." Microscopy and Microanalysis 3, S2 (August 1997): 469–70. http://dx.doi.org/10.1017/s1431927600009235.

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Titanium nitride (TiN) films are used as anti-reflection coatings (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. It is generally accepted in the literature that the microstructure of multilevel metal stacks is influenced by the texture of the substrate. For the case of interconnect materials used in the semiconductor industry, a typical metal stack is as follows: Titanium/Titanium Nitride/Al-alloy/ARC-Titanium Nitride. The Ti/TiN layer underneath the Al-alloy film is used as a barrier stack to prevent junction spiking. The Ti/TiN underlayer also determines the growth conditions (crystallography and orientation relationships) of the subsequent Al-alloy film.This study focuses on the microstructural characterization of the ARC-TiN layer on Si-oxide and Ti/TiN/Al-alloy substrates that are fabricated under similar conditions using conventional physical vapor deposition (PVD - sputtering) techniques. The ARC-TiN microstructure was investigated by transmission electron microscopy (TEM) using a Philips EM430 operating at 300 kV.

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Habermehl, S., R. D. Nasby, and M. J. Rightley. "Cycling endurance of silicon–oxide–nitride–oxide–silicon nonvolatile memory stacks prepared with nitrided SiO2/Si(100) interfaces." Applied Physics Letters 75, no. 8 (August 23, 1999): 1122–24. http://dx.doi.org/10.1063/1.124616.

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Rosenman, G., M. Naich, Ya Roizin, and Rob van Schaijk. "Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors." Journal of Applied Physics 99, no. 2 (January 15, 2006): 023702. http://dx.doi.org/10.1063/1.2161416.

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El Amrani, A., R. Si-Kaddour, M. Maoudj, and C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface." Materials Science-Poland 37, no. 3 (September 1, 2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.

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AbstractThe SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.

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Dissertations / Theses on the topic "Oxide nitride stacks"

1

Luo, Tien-ying. "Electrical and physical analysis of ultra-thin in-situ steam generated (ISSG) SiO₂ and nitride/oxide stacks for ULSI application /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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McCann, Michelle Jane, and michelle mccann@uni-konstanz de. "Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride." The Australian National University. Faculty of Engineering and Information Technology, 2002. http://thesis.anu.edu.au./public/adt-ANU20040903.100315.

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This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride stacks on silicon in a high temperature ambient.¶ The work on thin film cells is focussed on the characteristics of layers grown using liquid phase epitaxy. The morphology resulting from different seeding patterns, the transfer of dislocations to the epitaxial layer and the lifetime of layers grown using oxide compared with carbonised photoresist barrier layers are discussed. The second half of this work discusses boron doping of epitaxial layers. Simultaneous layer growth and boron doping is demonstrated, and shown to produce a 35um thick layer with a back surface field approximately 3.5um thick.¶ If an oxide/nitride stack is formed in the early stages of cell processing, then characteristics of the nitride may enable increased processing flexibility and hence the realisation of novel cell structures. An oxide/nitride stack on silicon also behaves as a good anti- reflection coating. The effects of a nitride deposited using low pressure chemical vapour deposition on the underlying wafer are discussed. With a thin oxide layer between the silicon and the silicon nitride, deposition is shown not to significantly alter effective life-times.¶ Heating an oxide/nitride stack on silicon is shown to result in a large drop in effective Lifetimes. As long as at least a thin oxide is present, it is shown that a high temperature nitrogen anneal results in a reduction in surface passivation, but does not significantly affect bulk lifetime. The reduction in surface passivation is shown to be due to a loss of hydrogen from the silicon/silicon oxide interface and is characterised by an increase in Joe. Higher temperatures, thinner oxides, thinner nitrides and longer anneal times are all shown to result in high Joe values. A hydrogen loss model is introduced to explain the observations.¶ Various methods of hydrogen re-introduction and hence Joe recovery are then discussed with an emphasis on high temperature forming gas anneals. The time necessary for successful Joe recovery is shown to be primarily dependent on the nitride thickness and on the temperature of the nitrogen anneal. With a high temperature forming gas anneal, Joe recovery after nitrogen anneals at both 900 and 1000oC and with an optimised anti-reflection coating is demonstrated for chemically polished wafers.¶ Finally the effects of oxide/nitride stacks and high temperature anneals in both nitrogen and forming gas are discussed for a variety of wafers. The optimal emitter sheet resistance is shown to be independent of nitrogen anneal temperature. With textured wafers, recovery of Joe values after a high temperature nitrogen anneal is demonstrated for wafers with a thick oxide, but not for wafers with a thin oxide. This is shown to be due to a lack of surface passivation at the silicon/oxide interface.

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McCann, Michelle Jane. "Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride." Phd thesis, 2002. http://hdl.handle.net/1885/47800.

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This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride stacks on silicon in a high temperature ambient.¶ The work on thin film cells is focussed on the characteristics of layers grown using liquid phase epitaxy. The morphology resulting from different seeding patterns, the transfer of dislocations to the epitaxial layer and the lifetime of layers grown using oxide compared with carbonised photoresist barrier layers are discussed. The second half of this work discusses boron doping of epitaxial layers. Simultaneous layer growth and boron doping is demonstrated, and shown to produce a 35um thick layer with a back surface field approximately 3.5um thick.¶ ...

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ZHU, WAN-WEN, and 朱萬文. "Study of stacked oxide/nitride/oxide (ONO) interpoly dielectric." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/34020485096393122653.

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Lee, He-lin, and 李和臨. "A Nonvolatile Two-Bits SONOS Memory with Vertical Oxide-Nitride-Oxide Stack." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/upayuw.

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碩士
國立中山大學
電機工程學系研究所
95
Flash memory is one sort of non-volatile memory, focus on the dates holding and capacity. Conventional non-volatile memory applies poly-crystalline for floating gate material, because the poly-crystalline (like poly-silicon) itself is the semiconductor material, will cause leakage problem, recently, Oxide-nitride-oxide multi-layer structure is under development for the place of conventional floating gate. Because it is the insulator material, can suppress leakage current, and it contains a deeper trapping energy level, and has a partial trapped carriers phenomenon to give a multi-bits memory solution. My effort is to propose a pair of ONO three layers stack, which is located close to the beneath of D/S region and a column like. Such structure can overcome miniaturization limitation of channel length, and a somewhat depth oxide can promise good isolation and separation between the trapping layer and other area, and a reliable distance of the two trapped unit can prevent interference issue. My proposal can suppose a higher devices density and a feasible and flexible solution to develop memory devices, a cost down to be more competitive, certainly bring much favor for the future improvement.

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Huang, Chen-Yi, and 黃禎毅. "Effect of ONO (Oxide-Nitride-Oxide) Interpoly on Charge Loss in Stacked-Gate Flash Memory." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/70403767347558201149.

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碩士
國立成功大學
微電子工程研究所碩博士班
90
Recently, the Flash memory has received much attention for application to the digital cameras and notebooks as portable mass storage. Although many different Flash cell variations have been reported and introduced into the market place so far, stacked-gate flash memory is still considered as a potential candidate and mainstream for low power and high-speed Flash memory products. However, for the design of advanced flash memory devices, the reliability of data retention is a major concern. In the past, the thickness of ONO (Oxide-Nitride-Oxide) interpoly was regarded as the key issue, and it was mainly focused on thinning the nitride and thickening the top and bottom oxide. In this thesis, first we report electrical characteristics of the ONO dielectric films under both stress polarities, and characteristics of the oxide films are taken as reference. From the experimental results, conduction mechanism of asymmetric ONO dielectric is proposed in this study, which is concentrated on hole-electron recombination under positive and negative stressing. Moreover, the effect of ONO (Oxide-Nitride-Oxide) interpoly on charge loss in stacked-gate flash memory is discussed. We claim that increase of charge loss after 1000 program/erase cycles is cause by electrons trapped in the ONO interpoly. With changed operation conditions according to conduction mechanism model, we successfully reduce the number of electrons trapped in ONO interpoly, and then decrease charge loss phenomenon of the flash memory device.

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HUANG, WEN-YUAN, and 黃文遠. "Dielectric reliability and transport mechanisms of the stacked oxide/nitride/oxide films grown on Si substrate." Thesis, 1986. http://ndltd.ncl.edu.tw/handle/98212231632801545296.

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Lee, Yi-Mu. "Breakdown and reliability of CMOS devices with stacked oxide/nitride and oxynitride gate dielectrics prepared by RPECVD." 2003. http://www.lib.ncsu.edu/theses/available/etd-06082003-115317/unrestricted/etd.pdf.

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Su, Yuan-Hung, and 蘇元宏. "GATE LEAKAGE PARTITION MODEL FOR LOCATION OF TRAP GENERATION IN ULTRATHIN OXIDE/NITRIDE GATE STACK AND ITS IMPACT ON MOBILITY DEGRADATION." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/82987826726974556555.

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碩士
國立聯合大學
電子工程學系碩士班
94
Aim of this thesis is to investigate the location of trap generation between source and drain using gate leakage partition model and the impact mobility degradation on PECVD oxide/nitride (O/N) gate stack. We provide a mathematical model to correlate the distortion of gate leakage with the degradation of drain current and the position of trap generation between source-drain terminal. Experimental evidence shows that most of traps are generated near the source in early stage of stress, but near the drain after 1000 sec stress with much larger amount of traps. In addition, it is found that more traps are generated in the O/N gate stack than that in thermal gate oxide before 1000 sec. We also demonstrate that interface nitridation enhances the Si/SiO2 interface and retards the stress-induced trap generation during constant voltage stress (CVS). Furthermore, we consider the gate-drain leakage to extract the effective mobility. Results suggest this leakage partition model is not valid when the leakage current density is above 2A/cm2.

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Huang, Chien-Lin, and 黃建霖. "Effects of Aluminum Oxide and Silicon Nitride Stacked Films on Photovoltaic Characteristics of Passivated Emitter and Rear Contact Silicon Solar Cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/7cd7jh.

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碩士
國立虎尾科技大學
光電工程系光電與材料科技碩士班
105
In this study, the effects of aluminum oxide and silicon nitride stacked films on photovoltaic characteristics of passivated emitter and rear contact silicon solar cells were investigated. In general, the backside electrode of the screen-printed moncrystalline silicon solar cells was formed by screen-printed aluminum paste. However, the recombination rate of aluminum paste/p-type silicon interface is not good. Thus, the aluminum oxide (Al2O3) formed by atomic layer deposition (ALD) and metal organic chemical-vapor-deposition (MOCVD) as well as silicon nitride (SiNx) passivation layer formed by plasma enhanced chemical-vapor-deposition (PECVD) were investigated. By tuning the thickness and the composition of both Al2O3 and SiNx, the high quality stacked passivation layers were addressed. Moreover, the contact process of the Al2O3/SiNx stacked passivation layer were achieved by laser and wet chemical etching technique. The Nd:YAG laser with the wavelength of 1064 nm and the KOH solution for laser damage removal were presented for contact process. Regarding to the wet chemical etching technique, screen-printed polymer paste and the BOE etching solution were used for contact process. The results indicate that the Al2O3 thin film with interface trap charge of 2.061010 cm-2ev-1 deposited by ALD was better than that of MOCVD with interface trap charge of 1.741011 cm-2ev-1. The various thicknesses of silicon nitride ranged from 140 to 300 nm and aluminum oxide ranged from 10 to 30 nm were investigated. The results show that the better conversion efficiency (CE) was presented by combined the SiNx thickness of 180 nm with the Al2O3 thickness of 20 nm. Moreover, the composition effects of the SiNx were investigated by tuning SiH4/(SiH4+NH3) ratio. The results indicate that a good CE was achieved by the SiH4/(SiH4+NH3) at 0.45. Furthermore, the composition effects of the Al2O3 were investigated by tuning exposure time of trimethyl aluminum (TMA) and H2O. The results show that a good CE was demonstrated by the TMA with 0.04 s and H2O with 0.5 s exposure time. Finally, a good contact process was demonstrated by the laser with 1 W. According to the best parameters, a CE of 17.4 % with an open-circuit voltage (Voc) of 627 mV, and a short-circuit current density (Jsc) of 34.2 mA/cm2 were demonstrated in this work.

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Books on the topic "Oxide nitride stacks"

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Kirchman, David L. The nitrogen cycle. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198789406.003.0012.

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Nitrogen is required for the biosynthesis of many cellular components and can take on many oxidation states, ranging from −3 to +5. Consequently, nitrogen compounds can act as either electron donors (chemolithotrophy) or electron acceptors (anaerobic respiration). The nitrogen cycle starts with nitrogen fixation, the reduction of nitrogen gas to ammonium. Nitrogen fixation is carried out only by prokaryotes, mainly some cyanobacteria and heterotrophic bacteria. The ammonium resulting from nitrogen fixation is quickly used by many organisms for biosynthesis, being preferred over nitrate as a nitrogen source. It is also oxidized aerobically by chemolithoautotrophic bacteria and archaea during the first step of nitrification. The second step, nitrite oxidation, is carried out by other bacteria not involved in ammonia oxidation, resulting in the formation of nitrate. Some bacteria are capable of carrying out both steps (“comammox”). This nitrate can then be reduced to nitrogen gas or nitrous oxide during denitrification. It can be reduced to ammonium, a process called “dissimilatory nitrate reduction to ammonium.” Nitrogen gas is also released by anaerobic oxidation of ammonium (“anammox”) which is carried out by bacteria in the Planctomycetes phylum. The theoretical contribution of anammox to total nitrogen gas release is 29%, but the actual contribution varies greatly. Another gas in the nitrogen cycle, nitrous oxide, is a greenhouse gas produced by ammonia-oxidizing bacteria and archaea. The available data indicate that the global nitrogen cycle is in balance, with losses from nitrogen gas production equaling gains via nitrogen fixation. But excess nitrogen from fertilizers is contributing to local imbalances and several environmental problems in drinking waters, reservoirs, lakes, and coastal oceans.

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Book chapters on the topic "Oxide nitride stacks"

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Albertos, Pablo, Luis Sanz, Isabel Mateos, Inmaculada Sánchez-Vicente, Tamara Lechón, Guadalupe Fernández-Espinosa, Dolores Rodríguez, and Oscar Lorenzo. "Gasotransmission of Nitric Oxide (NO) at Early Plant Developmental Stages." In Gasotransmitters in Plants, 95–116. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-40713-5_5.

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Ahmad, Faraz S., and Clyde W. Yancy. "HFrEF pharmacological treatment: hydralazine and isosorbide dinitrate." In ESC CardioMed, 1872–77. Oxford University Press, 2018. http://dx.doi.org/10.1093/med/9780198784906.003.0429.

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The use of hydralazine and isosorbide dinitrate in combination with renin–angiotensin blockade and evidence-based beta-blocker therapy is an accepted therapy for heart failure with reduced ejection fraction (HFrEF). However, differing assessments of the evidence base and the strength of recommendation are noted between the heart failure guideline writing committees in America and Europe, so much so that this may the largest digression of opinion between the two august groups. Three randomized clinical trials in the United States provide the cornerstone evidence for use of hydralazine and nitrates in selected patients with HFrEF. The explanation of the potential mechanism of action for combination hydralazine and nitrate therapy in certain HFrEF populations has shifted from a haemodynamic to a neurohormonal model based on better understanding of the role of nitric oxide and oxidative stress imbalances in the pathogenesis of HFrEF. The differing professional interpretations of the data and the unique cohort studied most avidly (i.e. those of African descent), have resulted in unusually low use of this regimen despite evident salutary benefits. Moreover, the available preparation requires thrice-daily dosing and important side effects limit its tolerability. The future of hydralazine and isosorbide dinitrate use in patients with HFrEF will be informed by ongoing research allowing for more precise alignment of treatment and response. Even more so, further research to explore how best to modulate nitric oxide in cardiovascular disease including the application of pharmacogenomics may expose new therapeutic directions in the treatment of heart failure.

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Cespuglio, Raymond, and Sophie Burlet. "Voltammetric Detection of Nitric Oxide (NO) in the Rat Brain." In Molecular Regulation of Arousal States. CRC Press, 1997. http://dx.doi.org/10.1201/9780849333613.ch3.

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Cespuglio, Raymond, and Sophie Burlet. "Voltammetric Detection of Nitric Oxide (NO) in the Rat Brain." In Molecular Regulation of Arousal States. CRC Press, 1997. http://dx.doi.org/10.1201/9781420048940.ch3.

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Kresin, Vladimir Z., Sergei G. Ovchinnikov, and Stuart A. Wolf. "Materials (II)." In Superconducting State, 309–62. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198845331.003.0007.

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This chapter describes the properties of a number of interesting superconducting materials. The study of phonon-mediated superconductors, such as A-15 materials and MgB₂, flourished after the discovery of the high-Tc hydrides. At present, this family displays, under high pressure, record values of Tc close to room temperature. Other interesting systems, such as pnictides, heavy fermions, and ruthenates, with their peculiar interplay of superconductivity and magnetism, are also described. Fe-based superconductors, which were recently discovered, have relatively high Tc at ambient pressure. They display a two-gap energy spectrum. Pairing in intercalated nitrides is mainly provided by acoustic plasmons. Tungsten oxides represent a new family of oxides containing elements other than copper; they form filamentary structures. A special class is formed by topological superconductors; usually their properties are caused by odd-parity pairing. The presence of the states inside of the energy gap make these superconductors similar to topological insulators.

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Wu, Jia-Ping. "Swimming Exercise-Induced Improvements in Cardiorespiratory Fitness (CRF) are Caused by Nitric Oxide Functional Adaptations in the Oxygen Transport System." In Cardiorespiratory Fitness - New Topics [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.109306.

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Cardiorespiratory fitness (CRF) is associated with referring to enhance oxygen transport capacity to respiratory systems and increasing oxygen transport circulatory to skeletal muscle to produce energy. The aim of this report on the health-related CRF in the oxygen transport system-mediated physiological nitric oxide (NO) functional adaptations. Therefore, we want to know that swimming exercise-induced improvements in CRF resulted in increased oxygen transport capacity during physical activity of the respiratory systems. Therefore, the oxygen circulatory transport system is related to NO signaling and has been associated with various pathophysiologic functions and neuronal activity. Besides mediating normal functions, NO is implicated in inflammation and hypertension disease states. Swimming exercise is a good way to increase the rate of metabolism. Swimming exercise improves heart rate and oxygen circulatory, and increases the rate of metabolism and burning of heat. In this context, this review summarizes the roles of NO in improvements in cardiorespiratory fitness.

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Burlet, Sophie, and Raymond Cespuglio. "Voltammetric Detection of Nitric Oxide (NO) in the Rat Brain: Release Throughout the Sleep–Wake Cycle." In Molecular Regulation of Arousal States, 23–32. CRC Press, 2019. http://dx.doi.org/10.1201/9780429186844-3.

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Williams, Julie, Peter Reiner, and Steven Vincent. "Measurement of Nitric Oxide in the Brain Using the Hemoglobin Trapping Technique Coupled with In Vivo Microdialysis." In Molecular Regulation of Arousal States. CRC Press, 1997. http://dx.doi.org/10.1201/9780849333613.ch17.

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Williams, Julie, Peter Reiner, and Steven Vincent. "Measurement of Nitric Oxide in the Brain Using the Hemoglobin Trapping Technique Coupled with In Vivo Microdialysis." In Molecular Regulation of Arousal States. CRC Press, 1997. http://dx.doi.org/10.1201/9781420048940.ch17.

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Williams, Julie A., Steven R. Vincent, and Peter B. Reiner. "Measurement of Nitric Oxide in the Brain Using the Hemoglobin Trapping Technique Coupled with In Vivo Microdialysis." In Molecular Regulation of Arousal States, 201–12. CRC Press, 2019. http://dx.doi.org/10.1201/9780429186844-17.

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Conference papers on the topic "Oxide nitride stacks"

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Ziyuan Liu, Tomoya Saito, Tomoko Matsuda, Koichi Ando, Shu Ito, Markus Wilde, and Katsuyuki Fukutani. "Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories." In 2008 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2008. http://dx.doi.org/10.1109/relphy.2008.4558998.

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Morris, Stephen J. "Multi-Technology Measurements of Nitrided Oxide and High-K Gate Stacks." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2062949.

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Lee, Da-Yuan, Horng-Chih Lin, Wan-Ju Chiang, Chi-Chun Chen, Chi-Yuan Lin, Tiao-Yuan Huang, Tahui Wang, and Mong-Song Liang. "Negative-Bias-Temperature Instability in Ultra Thin Nitride/Oxide Stack Gate Dielectric." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.b-5-3.

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Wang, Hai-Hong, L. K. Han, Jason Yan, and Dim-Lee Kwong. "Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing." In Microelectronic Manufacturing '95, edited by Ih-Chin Chen, Girish A. Dixit, Trung T. Doan, and Nobuo Sasaki. SPIE, 1995. http://dx.doi.org/10.1117/12.221133.

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Sorokina, Elena Gennad’evna, Zhanna B. Semenova, Oksana V. Globa, Olga V. Karaseva, Valentin P. Reutov, Galina A. Ignatieva, Sofya A. Afanasieva, et al. "AUTOIMMUNE RESPONSE OF GLUTAMATE RECEPTORS AND NITRIC OXIDE IN EPILEPSY AND TRAUMATIC BRAIN INJURY." In International conference New technologies in medicine, biology, pharmacology and ecology (NT +M&Ec ' 2020). Institute of information technology, 2020. http://dx.doi.org/10.47501/978-5-6044060-0-7.23.

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In children with epilepsy and traumatic brain injury (TBI), the content of autoantibodies (aAb) to glutamate receptors (NMDA and AMPA subtypes) and the level of nitric oxide products - nitrothyrosine (NT) and nitrates/ nitrites (NOx) in the blood were studied. The obtained data make it possible to reveal the specificity of damage to AMPA and NMDA subtypes of glutamate receptors in convulsive states and posttraumatic brain injuries. The participation of NO and its products in the development of autoimmune response was revealed.

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Lin, C. C., S. Y. Chen, J. Wang, and C. L. Hsieh. "Highly accurate TEM/EDS analysis to identify the stack oxide-nitride-oxide structure of advanced NAND flash products." In 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2015. http://dx.doi.org/10.1109/ipfa.2015.7224365.

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Sengupta, Amretashis, and Chandan Kumar Sarkar. "Comparative study on nanocrystal embedded gate dielectric and oxide nitride oxide stack dielectric GAA MOSFET non-volatile memory devices." In 2012 International Conference on Informatics, Electronics & Vision (ICIEV). IEEE, 2012. http://dx.doi.org/10.1109/iciev.2012.6317402.

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Lin, W. H., K. L. Pey, Z. Dong, S. Y. M. Chooi, M. S. Zhou, T. C. Ang, C. H. Ang, and W. S. Lau. "Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9Å to 20.3Å) for Sub-0.13 μm CMOS and Beyond." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.a-3-3.

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Usov, Eduard, Nikolay Pribaturin, Vladimir Chukhno, Ilya Klimonov, Anton Butov, Ivan Kudashov, Albert Gafiyatullin, and Pavel Lobanov. "Development of Approaches to Simulate Fuel Rod Destruction With Different Fuel Type." In 2020 International Conference on Nuclear Engineering collocated with the ASME 2020 Power Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/icone2020-16326.

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Abstract Due to the revival of interest to the development of fast reactors cooled by liquid metals, the problem of carrying out theoretical research in support of their safety is actual. A detailed calculation of all stages of the accident from the beginning to the end requires knowledge of the laws for modeling physical processes occurring in the reactor in an emergency. The most serious are accidents with the destruction of the core. Simulation of severe accident in nuclear reactor is the key element in safety analysis of nuclear power plants. Destruction of fuel rods is one of the most important processes that should be calculated during core degradation. For different type of fuels the mechanism of the degradation are different too. For example, oxide and metallic fuels usually melt congruently at high temperature, but nitride fuel dissociates. The main objective of the proposed research is developing of models and numerical algorithms for calculation fuel rods destruction with oxide, metallic and nitride fuels. The models of the destruction processes and some calculation results are presented in the paper. The processes are investigated for the first phase of severe accidents covering the period from the onset of fuel-rod melting to the melt escape from the core center.

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Koutsenko, I. G., S. F. Onegin, and A. M. Sipatov. "Application of CFD-Based Analysis Technique for Design and Optimization of Gas Turbine Combustors." In ASME Turbo Expo 2004: Power for Land, Sea, and Air. ASMEDC, 2004. http://dx.doi.org/10.1115/gt2004-53398.

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The design and operational development of gas turbine combustors is a complex process, involving a great volume of design and experimental work. The application of computational fluid dynamics (CFD) methods allows to lower the volume of experimental works on operational development of combustors and to make changes to the design of combustion chambers on early design stages. In this paper the application of commercial CFD package CFX-TASCflow for calculation of flow structure and analysis of nitric oxide formation process in the combustion chamber of the PS-90A gas turbine and its modifications is considered. The results of the analysis show, that the basic determinative criterion of a nitric oxide emission level is the residence time of a combustion products in high-temperature zones. With help of this criterion, an optimization of the PS-90A combustion chamber was performed. A design of an optimized combustion chamber allows to achieve a low level of nitric oxide emissions.

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Reports on the topic "Oxide nitride stacks"

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Schwartz, Bertha, Vaclav Vetvicka, Ofer Danai, and Yitzhak Hadar. Increasing the value of mushrooms as functional foods: induction of alpha and beta glucan content via novel cultivation methods. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600033.bard.

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During the granting period, we performed the following projects: Firstly, we differentially measured glucan content in several pleurotus mushroom strains. Mushroom polysaccharides are edible polymers that have numerous reported biological functions; the most common effects are attributed to β-glucans. In recent years, it became apparent that the less abundant α-glucans also possess potent effects in various health conditions. In our first study, we explored several Pleurotus species for their total, β and α-glucan content. Pleurotuseryngii was found to have the highest total glucan concentrations and the highest α-glucans proportion. We also found that the stalks (stipe) of the fruit body contained higher glucan content then the caps (pileus). Since mushrooms respond markedly to changes in environmental and growth conditions, we developed cultivation methods aiming to increase the levels of α and β-glucans. Using olive mill solid waste (OMSW) from three-phase olive mills in the cultivation substrate. We were able to enrich the levels mainly of α-glucans. Maximal total glucan concentrations were enhanced up to twice when the growth substrate contained 80% of OMSW compared to no OMSW. Taking together this study demonstrate that Pleurotuseryngii can serve as a potential rich source of glucans for nutritional and medicinal applications and that glucan content in mushroom fruiting bodies can be further enriched by applying OMSW into the cultivation substrate. We then compared the immune-modulating activity of glucans extracted from P. ostreatus and P. eryngii on phagocytosis of peripheral blood neutrophils, and superoxide release from HL-60 cells. The results suggest that the anti-inflammatory properties of these glucans are partially mediated through modulation of neutrophileffector functions (P. eryngiiwas more effective). Additionally, both glucans dose-dependently competed for the anti-Dectin-1 and anti-CR3 antibody binding. We then tested the putative anti-inflammatory effects of the extracted glucans in inflammatory bowel disease (IBD) using the dextran sulfate sodium (DSS)–induced model in mice. The clinical symptoms of IBD were efficiently relieved by the treatment with two different doses of the glucan from both fungi. Glucan fractions, from either P. ostreatus or P. eryngii, markedly prevented TNF-α mediated inflammation in the DSS–induced inflamed intestine. These results suggest that there are variations in glucan preparations from different fungi in their anti-inflammatory ability. In our next study, we tested the effect of glucans on lipopolysaccharide (LPS)-induced production of TNF-α. We demonstrated that glucan extracts are more effective than mill mushroom preparations. Additionally, the effectiveness of stalk-derived glucans were slightly more pronounced than of caps. Cap and stalk glucans from mill or isolated glucan competed dose-dependently with anti-Dectin-and anti-CR-3 antibodies, indicating that they contain β-glucans recognized by these receptors. Using the dextran sulfate sodium (DSS)-inflammatory bowel disease mice model, intestinal inflammatory response to the mill preparations was measured and compared to extracted glucan fractions from caps and stalks. We found that mill and glucan extracts were very effective in downregulatingIFN-γ and MIP-2 levels and that stalk-derived preparations were more effective than from caps. The tested glucans were equally effective in regulating the number of CD14/CD16 monocytes and upregulating the levels of fecal-released IgA to almost normal levels. In conclusion, the most effective glucans in ameliorating some IBD-inflammatory associated symptoms induced by DSS treatment in mice were glucan extracts prepared from the stalk of P. eryngii. These spatial distinctions may be helpful in selecting more effective specific anti-inflammatory mushrooms-derived glucans. We additionally tested the effect of glucans on lipopolysaccharide-induced production of TNF-α, which demonstrated stalk-derived glucans were more effective than of caps-derived glucans. Isolated glucans competed with anti-Dectin-1 and anti-CR3 antibodies, indicating that they contain β-glucans recognized by these receptors. In conclusion, the most effective glucans in ameliorating IBD-associated symptoms induced by DSS treatment in mice were glucan extracts prepared from the stalk of P. eryngii grown at higher concentrations of OMSW. We conclude that these stress-induced growing conditions may be helpful in selecting more effective glucans derived from edible mushrooms. Based on the findings that we could enhance glucan content in Pleurotuseryngii following cultivation of the mushrooms on a substrate containing different concentrations of olive mill solid waste (OMSW) and that these changes are directly related to the content of OMSW in the growing substrate we tested the extracted glucans in several models. Using dextran sulfate sodium (DSS)–inflammatory bowel disease (IBD) mice model, we measured the colonic inflammatory response to the different glucan preparations. We found that the histology damaging score (HDS) resulting from DSS treatment reach a value of 11.8 ± 2.3 were efficiently downregulated by treatment with the fungal extracted glucans, glucans extracted from stalks cultivated at 20% OMSWdownregulated to a HDS value of 6.4 ± 0.5 and at 80% OMSW showed the strongest effects (5.5 ± 0.6). Similar downregulatory effects were obtained for expression of various intestinal cytokines. All tested glucans were equally effective in regulating the number of CD14/CD16 monocytes from 18.2 ± 2.7 % for DSS to 6.4 ± 2.0 for DSS +glucans extracted from stalks cultivated at 50% OMSW. We finally tested glucans extracted from Pleurotuseryngii grown on a substrate containing increasing concentrations of olive mill solid waste (OMSW) contain greater glucan concentrations as a function of OMSW content. Treatment of rat Intestinal epithelial cells (IEC-6) transiently transfected with Nf-κB fused to luciferase demonstrated that glucans extracted from P. eryngii stalks grown on 80% OMSWdownregulatedTNF-α activation. Glucans from mushrooms grown on 80% OMSW exerted the most significant reducing activity of nitric oxide production in lipopolysaccharide (LPS) treated J774A.1 murine macrophages. The isolated glucans were tested in vivo using the Dextran Sodium Sulfate (DSS) induced colitis in C57Bl/6 mice and found to reduce the histology damaging score resulting from DSS treatment. Expression of various intestinal cytokines were efficiently downregulated by treatment with the fungal extracted glucans. We conclude that the stress-induced growing conditions exerted by OMSW induces production of more effective anti-inflammatory glucans in P. eryngii stalks.

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MECHANISTIC STUDIES AND DESIGN OF HIGHLY ACTIVE CUPRATE CATALYSTS FOR THE DIRECT DECOMPOSITION AND SELECTIVE REDUCTION OF NITRIC OXIDE AND HYDROCARBONS TO NITROGEN FOR ABATEMENT OF STACK EMISSIONS. Office of Scientific and Technical Information (OSTI), April 1998. http://dx.doi.org/10.2172/9059.

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