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Journal articles on the topic 'Oxide-based heterostructures'

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Author: Grafiati

Published: 10 March 2023

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1

Lee, Sang Woon. "Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition." Journal of Nanomaterials 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1671390.

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Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).

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2

Nguyen, Dong Tri, Viet Vu Quoc, Wonhyuk Son, Jong-Soo Rhyee, Tae-Yeong Koo, Seungwoo Song, Nam-Suk Lee, and Heon-Jung Kim. "Growth, domain structure, and magnetic properties of CaMnO3(110) and La0.7Ca0.3MnO3(110) layers synthesized on hexagonal YMnO3(0001)." CrystEngComm 19, no. 35 (2017): 5269–74. http://dx.doi.org/10.1039/c7ce01187c.

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Oxide heterostructures based on cubic perovskite have been studied widely but there has been little interest in the combination of different polymorphs, such as hexagonal and cubic manganites, into a single heterostructure.

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3

Xiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang, and Xiaosheng Zhang. "Highly sensitive and broadband photodetectors based on WSe₂/MoS₂ heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (July 11, 2022): 023504. http://dx.doi.org/10.1063/5.0100191.

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A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on the WSe2/MoS2 heterostructure with graphene (Gr)/indium tin oxide (ITO) hybrid electrodes has been fabricated. The vdWs contacts established between the exfoliated graphene layers and WSe2/MoS2 heterostructure are able to get rid of lattice damages caused by atom bombardment during the deposition of metal electrodes. In addition, the reduced Schottky barrier at graphene/heterostructure interfaces facilitates the transport of carriers. Experimental results show that the photodetector based on WSe2/MoS2 heterostructures with Gr/ITO hybrid electrodes exhibits a high responsivity of up to 1236.5 A W−1, a detectivity of up to 1.23 × 1013 Jones, and a fast response of 270/130 μs to light from the ultraviolet to near-infrared range.

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Блохин, С. А., В. Н. Неведомский, М. А. Бобров, Н. А. Малеев, А. А. Блохин, А. Г. Кузьменков, А. П. Васильев, et al. "Вертикально-излучающие лазеры спектрального диапазона 1.55 мкм, изготовленные по технологии спекания гетероструктур, выращенных методом молекулярно-пучковой эпитаксии из твердотельных источников." Физика и техника полупроводников 54, no. 10 (2020): 1088. http://dx.doi.org/10.21883/ftp.2020.10.49947.9463.

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The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was shown that in the case of incomplete removal of oxide films during the preparation of the wafers before fusion and/or the presence of adsorbed water on the wafer surfaces, the fused interface contains a large number of amorphous inclusions, most likely related to the III-group oxides. Optimization of the formation regimes of a buried tunnel junction on the surface of the InP-based heterostructure made it possible to reduce the surface roughness down to 1 nm and to ensure the thickness of the GaAs-InGaAsP fused interface < 5 nm, with no dislocations or other extended defects in the region of the fused heterointerfaces. The 1.55 μm-range VCSELs fabricated from the hybrid heterostructures created by using the developed technology demonstrate efficient lasing under continuous wave pumping over a wide temperature range, which indicates the high optical quality of the fused heterointerfaces in the VCSEL heterostructure.

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GE, CHEN, KUI-JUAN JIN, HUI-BIN LU, and CONG WANG. "NOVEL PROPERTIES IN OXIDE HETEROSTRUCTURES." Modern Physics Letters B 23, no. 09 (April 10, 2009): 1129–45. http://dx.doi.org/10.1142/s0217984909019594.

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A brief review of recent investigations in oxide heterostructures is presented. First, experimental results are shown. Positive colossal magnetoresistance with high sensitivities are obtained at low magnetic field (<1000 Oe) nearly at room temperature. Picoseconds photoelectric effects of the rise time ~ 210 ps and the half-maximum ~ 650 ps are also found in some oxide heterostructures. Furthermore, resistance switching characteristic and electric displacement-voltage hysteresis loops have been observed in BaTiO 3-δ/ Si p–n heterostructures. Second, theoretical descriptions are also shown here. A model for the mechanism causing the positive colossal magnetoresistance has been established. Moreover, the transport properties and the important role played by oxygen vacancies are theoretically investigated in oxide heterostructures. In addition, an extended percolation model is well developed, with which the transport characteristic in oxide thin films can be well simulated based on the phase separation scenario. Notably, the interface effects play a crucial role in the multifunctional properties of the oxide heterostructures.

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6

Trenczek-Zajac, Anita, Joanna Banas-Gac, and Marta Radecka. "TiO2@Cu2O n-n Type Heterostructures for Photochemistry." Materials 14, no. 13 (July 2, 2021): 3725. http://dx.doi.org/10.3390/ma14133725.

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A TiO2@Cu2O semiconductor heterostructure with better photochemical response compared to TiO2 was obtained using an electrochemical deposition method of Cu2O on the surface of TiO2 nanotubes. The choice of 1D nanotubes was motivated by the possibility of achieving fast charge transfer, which is considered best suited for photochemical applications. The morphology and structural properties of the obtained heterojunction were determined using standard methods —SEM and Raman spectroscopy. Analysis of photoelectrochemical properties showed that TiO2@Cu2O heterostructures exhibit better properties resulting from an interaction with sunlight than TiO2. A close relationship between the morphology of the heterostructures and their photoproperties was also demonstrated. Investigations representing a combination of photoelectrochemical cells for hydrogen production and photocatalysis—photoelectrocatalysis—were also carried out and confirmed the observations on the photoproperties of heterostructures. Analysis of the Mott–Schottky plots as well as photoelectrochemical measurements (Iph-V, Iph-t) showed that TiO2 as well as, unusually, Cu2O exhibit n-type conductivity. On this basis, a new energy diagram of the TiO2@Cu2O system was proposed. It was found that TiO2@Cu2O n-n type heterostructure prevents the processes of photocorrosion of copper(I) oxide contained in a TiO2-based heterostructure.

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Dorovskikh, Svetlana I., Darya D. Klyamer, Evgeny A. Maksimovskiy, Victoria V. Volchek, Sergey M. Zharkov, Natalia B. Morozova, and Tamara V. Basova. "Heterostructures Based on Cobalt Phthalocyanine Films Decorated with Gold Nanoparticles for the Detection of Low Concentrations of Ammonia and Nitric Oxide." Biosensors 12, no. 7 (June 30, 2022): 476. http://dx.doi.org/10.3390/bios12070476.

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This work is aimed at the development of new heterostructures based on cobalt phthalocyanines (CoPc) and gold nanoparticles (AuNPs), and the evaluation of the prospects of their use to determine low concentrations of ammonia and nitric oxide. For this purpose, CoPc films were decorated with AuNPs by gas-phase methods (MOCVD and PVD) and drop-casting (DC), and their chemiresistive sensor response to low concentrations of NO (10–50 ppb) and NH3 (1–10 ppm) was investigated. A comparative analysis of the characteristics of heterostructures depending on the preparation methods was carried out. The composition, structure, and morphology of the resulting hybrid films were studied by X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma atomic emission (ICP-AES) spectroscopy, as well as electron microscopy methods to discuss the effect of these parameters on the sensor response of hybrid films to ammonia and nitric oxide. It was shown that regardless of the fabrication method, the response of Au/CoPc heterostructures to NH3 and NO gases increased with an increase in the concentration of gold. The sensor response of Au/CoPc heterostructures to NH3 increased 2–3.3 times compared to CoPc film, whereas in the case of NO it increased up to 16 times. The detection limits of the Au/CoPc heterostructure with a gold content of ca. 2.1 µg/cm2 for NH3 and NO were 0.1 ppm and 4 ppb, respectively. It was shown that Au/CoPc heterostructures can be used for the detection of NH3 in a gas mixture simulating exhaled air (N2—74%, O2—16%, H2O—6%, CO2—4%).

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Li, Junjiao, Jun Xie, Dongchen Li, Lei Yu, Chaowei Xu, Senlin Yan, and Yuzheng Lu. "An Interface Heterostructure of NiO and CeO2 for Using Electrolytes of Low-Temperature Solid Oxide Fuel Cells." Nanomaterials 11, no. 8 (August 5, 2021): 2004. http://dx.doi.org/10.3390/nano11082004.

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Interface engineering can be used to tune the properties of heterostructure materials at an atomic level, yielding exceptional final physical properties. In this work, we synthesized a heterostructure of a p-type semiconductor (NiO) and an n-type semiconductor (CeO2) for solid oxide fuel cell electrolytes. The CeO2-NiO heterostructure exhibited high ionic conductivity of 0.2 S cm−1 at 530 °C, which was further improved to 0.29 S cm−1 by the introduction of Na+ ions. When it was applied in the fuel cell, an excellent power density of 571 mW cm−1 was obtained, indicating that the CeO2-NiO heterostructure can provide favorable electrolyte functionality. The prepared CeO2-NiO heterostructures possessed both proton and oxygen ionic conductivities, with oxygen ionic conductivity dominating the fuel cell reaction. Further investigations in terms of electrical conductivity and electrode polarization, a proton and oxygen ionic co-conducting mechanism, and a mechanism for blocking electron transport showed that the reconstruction of the energy band at the interfaces was responsible for the enhanced ionic conductivity and cell power output. This work presents a new methodology and scientific understanding of semiconductor-based heterostructures for advanced ceramic fuel cells.

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Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov, and Olga E. Glukhova. "Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study." Materials 15, no. 24 (December 13, 2022): 8921. http://dx.doi.org/10.3390/ma15248921.

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One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers. The influence of mechanical deformations on the electronic structure of borophene/GaN and borophene/ZnO van der Waals heterostructures are studied using the first-principles calculations based on density functional theory (DFT) within a double zeta plus polarization (DZP) basis set. Four types of deformation are considered: uniaxial (along the Y axis)/biaxial (along the X and Y axes) stretching and uniaxial (along the Y axis)/biaxial (along the X and Y axes) compression. The main objective of this study is to identify the most effective types of deformation from the standpoint of tuning the electronic properties of the material, namely the possibility of opening the energy gap in the band structure. For each case of deformation, the band structure and density of the electronic states (DOS) are calculated. It is found that the borophene/GaN heterostructure is more sensitive to axial compression while the borophene/ZnO heterostructure is more sensitive to axial stretching. The energy gap appears in the band structure of borophene/GaN heterostructure at uniaxial compression by 14% (gap size of 0.028 eV) and at biaxial compression by 4% (gap size of 0.018 eV). The energy gap appears in the band structure of a borophene/ZnO heterostructure at uniaxial stretching by 10% (gap size 0.063 eV) and at biaxial compression by 6% (0.012 eV). It is predicted that similar heterostructures with an emerging energy gap can be used for various nano- and optoelectronic applications, including Schottky barrier photodetectors.

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Slepchenkov, Michael M., Dmitry A. Kolosov, and Olga E. Glukhova. "First-Principles Study of Electronic and Optical Properties of Tri-Layered van der Waals Heterostructures Based on Blue Phosphorus and Zinc Oxide." Journal of Composites Science 6, no. 6 (June 2, 2022): 163. http://dx.doi.org/10.3390/jcs6060163.

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The creation of van der Waals heterostructures with tunable properties from various combinations of modern 2D materials is one of the promising tasks of nanoelectronics, focused on improving the parameters of electronic nanodevices. In this paper, using ab initio methods, we theoretically predict the existence of new three-layer van der Waals zinc oxide/blue phosphorus/zinc oxide (ZnO/BlueP/ZnO) heterostructure with AAA, ABA, ABC layer packing types. It is found that AAA-, ABA-, and ABC-stacked ZnO/BlueP/ZnO heterostructures are semiconductors with a gap of about 0.7 eV. The dynamic conductivity and absorption spectra are calculated in the wavelength range of 200–2000 nm. It is revealed that the BlueP monolayer makes the greatest contribution to the formation of the profiles the dynamic conductivity and absorption coefficient spectrums of the ZnO/BlueP/ZnO heterostructure. This is indicated by the fact that, for the ZnO/BlueP/ZnO heterostructure, conductivity anisotropy is observed at different directions of wave polarization, as for blue phosphorus. It has been established that the absorption maximum of the heterostructure falls in the middle ultraviolet range, and, starting from a wavelength of 700 nm, there is a complete absence of absorption. The type of layer packing has practically no effect on the regularities in the formation of the spectra of dynamic conductivity and the absorption coefficient, which is important from the point of view of their application in optoelectronics.

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11

JIN, YU-LING, KUI-JUAN JIN, CHEN GE, HUI-BIN LU, and GUO-ZHEN YANG. "RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES." Modern Physics Letters B 27, no. 29 (November 15, 2013): 1330021. http://dx.doi.org/10.1142/s0217984913300214.

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Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

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Gu, Youdi, Qian Wang, Weijin Hu, Wei Liu, Zhidong Zhang, Feng Pan, and Cheng Song. "An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena." Journal of Physics D: Applied Physics 55, no. 23 (February 11, 2022): 233001. http://dx.doi.org/10.1088/1361-6463/ac4fd3.

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Abstract SrRuO3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to the strong spin–orbit coupling, itinerant ferromagnetism with 4d electrons, high metallic conductivity, perpendicular magnetic anisotropy and rich oxygen octahedral distortion of SRO. Here, this work aims to offer a timely and systematic review on SRO-based heterostructures for its emerging opportunities in oxide spintronic and topological electronic applications. We first present a brief summary of the current status in SRO-based heterostructures and describe the motivations of this review. We then briefly review the surface and interface modulation in SRO-based heterostructures, including oxygen octahedral distortions (antiferrodistortive mode and ferroelectric mode) engineering and ion defect engineering. In the third part, we discuss the spin-charge interconversion phenomena in SRO-based heterostructures, covering the inverse spin Hall effect and current-induced spin-orbit torques. Particularly, in the fourth part, we discuss the emergent topological Hall effect and underlying mechanism in SRO-based heterostructures, including the two-channel anomalous Hall effect and Berry phase manipulation. The fifth part presents the magnetic Weyl fermions and its electric-field control of SRO films. We finally conclude with a discussion of challenges and prospects of SRO-based heterostructures, which provides a guidance for exploring novel physical properties and designing multifunctional devices based on SRO.

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Karsthof, Robert, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis, and Marius Grundmann. "Nickel Oxide–Based Heterostructures with Large Band Offsets." physica status solidi (b) 257, no. 7 (December 17, 2019): 1900639. http://dx.doi.org/10.1002/pssb.201900639.

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Berman, Diana, Yuchen Sha, and Elena V. Shevchenko. "Effect of Polymer Removal on the Morphology and Phase of the Nanoparticles in All-Inorganic Heterostructures Synthesized via Two-Step Polymer Infiltration." Molecules 26, no. 3 (January 28, 2021): 679. http://dx.doi.org/10.3390/molecules26030679.

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Polymer templates play an essential role in the robust infiltration-based synthesis of functional multicomponent heterostructures with controlled structure, porosity, and composition. Such heterostructures are be used as hybrid organic–inorganic composites or as all-inorganic systems once the polymer templates are removed. Using iron oxide/alumina heterostructures formed by two-step infiltration of polystyrene-block-polyvinyl pyridine block copolymer with iron and aluminum precursors from the solution and vapor-phases, respectively, we show that the phase and morphology of iron oxide nanoparticles dramatically depend on the approach used to remove the polymer. We demonstrate that thermal and plasma oxidative treatments result in iron oxide nanoparticles with either solid or hollow morphologies, respectively, that lead to different magnetic properties of the resulting materials. Our study extends the boundaries of structure manipulations in multicomponent heterostructures synthesized using polymer infiltration synthesis, and hence their properties.

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Nobile, Concetta, and Pantaleo Davide Cozzoli. "Synthetic Approaches to Colloidal Nanocrystal Heterostructures Based on Metal and Metal-Oxide Materials." Nanomaterials 12, no. 10 (May 18, 2022): 1729. http://dx.doi.org/10.3390/nano12101729.

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Composite inorganic nanoarchitectures, based on combinations of distinct materials, represent advanced solid-state constructs, where coexistence and synergistic interactions among nonhomologous optical, magnetic, chemical, and catalytic properties lay a basis for the engineering of enhanced or even unconventional functionalities. Such systems thus hold relevance for both theoretical and applied nanotechnology-based research in diverse areas, spanning optics, electronics, energy management, (photo)catalysis, biomedicine, and environmental remediation. Wet-chemical colloidal synthetic techniques have now been refined to the point of allowing the fabrication of solution free-standing and easily processable multicomponent nanocrystals with sophisticated modular heterostructure, built upon a programmed spatial distribution of the crystal phase, composition, and anchored surface moieties. Such last-generation breeds of nanocrystals are thus composed of nanoscale domains of different materials, assembled controllably into core/shell or heteromer-type configurations through bonding epitaxial heterojunctions. This review offers a critical overview of achievements made in the design and synthetic elaboration of colloidal nanocrystal heterostructures based on diverse associations of transition metals (with emphasis on plasmonic metals) and transition-metal oxides. Synthetic strategies, all leveraging on the basic seed-mediated approach, are described and discussed with reference to the most credited mechanisms underpinning regioselective heteroepitaxial deposition. The unique properties and advanced applications allowed by such brand-new nanomaterials are also mentioned.

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Tulina, N. A., V. V. Sirotkin, I. Yu Borisenko, and A. A. Ivanov. "Simulating resistive switching in heterostructures based on oxide compounds." Bulletin of the Russian Academy of Sciences: Physics 77, no. 3 (March 2013): 265–67. http://dx.doi.org/10.3103/s1062873813030362.

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Semenov, Andrey R., Tatiana A. Kholomina, Vladimir G. Litvinov, and Alexander V. Ermachikhin. "Investigation of the properties of zinc oxide based heterostructures." Physics of Complex Systems 2, no. 4 (2021): 172–79. http://dx.doi.org/10.33910/2687-153x-2021-2-4-172-179.

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Chen, Y. Z., E. Stamate, N. Pryds, J. R. Sun, B. G. Shen, and S. Linderoth. "Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures." Applied Physics Letters 98, no. 23 (June 6, 2011): 232105. http://dx.doi.org/10.1063/1.3598391.

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Sanna, Simone, Vincenzo Esposito, Mogens Christensen, and Nini Pryds. "High ionic conductivity in confined bismuth oxide-based heterostructures." APL Materials 4, no. 12 (December 2016): 121101. http://dx.doi.org/10.1063/1.4971801.

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Zappa, Dario, Vardan Galstyan, Navpreet Kaur, Hashitha M. M. Munasinghe Arachchige, Orhan Sisman, and Elisabetta Comini. "“Metal oxide -based heterostructures for gas sensors”- A review." Analytica Chimica Acta 1039 (December 2018): 1–23. http://dx.doi.org/10.1016/j.aca.2018.09.020.

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Schaper, Nicholas, Dheyaa Alameri, Yoosuk Kim, Brian Thomas, Keith McCormack, Mathew Chan, Ralu Divan, David J. Gosztola, Yuzi Liu, and Irma Kuljanishvili. "Controlled Fabrication of Quality ZnO NWs/CNTs and ZnO NWs/Gr Heterostructures via Direct Two-Step CVD Method." Nanomaterials 11, no. 7 (July 15, 2021): 1836. http://dx.doi.org/10.3390/nano11071836.

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A novel and advanced approach of growing zinc oxide nanowires (ZnO NWs) directly on single-walled carbon nanotubes (SWCNTs) and graphene (Gr) surfaces has been demonstrated through the successful formation of 1D–1D and 1D–2D heterostructure interfaces. The direct two-step chemical vapor deposition (CVD) method was utilized to ensure high-quality materials’ synthesis and scalable production of different architectures. Iron-based universal compound molecular ink was used as a catalyst in both processes (a) to form a monolayer of horizontally defined networks of SWCNTs interfaced with vertically oriented ZnO NWs and (b) to grow densely packed ZnO NWs directly on a graphene surface. We show here that our universal compound molecular ink is efficient and selective in the direct synthesis of ZnO NWs/CNTs and ZnO NWs/Gr heterostructures. Heterostructures were also selectively patterned through different fabrication techniques and grown in predefined locations, demonstrating an ability to control materials’ placement and morphology. Several characterization tools were employed to interrogate the prepared heterostructures. ZnO NWs were shown to grow uniformly over the network of SWCNTs, and much denser packed vertically oriented ZnO NWs were produced on graphene thin films. Such heterostructures can be used widely in many potential applications, such as photocatalysts, supercapacitors, solar cells, piezoelectric or thermal actuators, as well as chemical or biological sensors.

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Zhang, Raymond, Timofey Averianov, and Ekaterina Pomerantseva. "Assembly of Two-Dimensional δ-V₂O₅-Ti₃C₂T_x Heterostructure Electrodes for Li-Ion Batteries." ECS Meeting Abstracts MA2022-02, no. 2 (October 9, 2022): 150. http://dx.doi.org/10.1149/ma2022-022150mtgabs.

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The bilayered phase of vanadium oxide (δ-V2O5∙nH2O or BVO) synthesized via sol-gel synthesis method is an attractive candidate to be used as a cathode material for Li-ion batteries (LIBs) due to its expanded interlayer spacing, and high theoretical capacity. However, poor electrical conductivity and rapid capacity fade present challenges for achieving high-rate performance and good cycle life during cycling in LIBs. A viable solution to mitigating these drawbacks is to fabricate two-dimensional (2D) heterostructures comprised of vanadium oxide and an additional selected 2D material. Titanium carbide (Ti3C2Tx) MXenes are particularly of interest for their high electronic conductivity (103 S cm-1) and well developed delamination protocols. Herein, we present a wet-based approach for assembling BVO and MXene nanoflakes into 2D heterostructures in suspension. In this study, we first demonstrate a simple liquid phase exfoliation technique utilizing probe ultrasonication to exfoliate bulk -LixV2O5·nH2O (LVO). Previous experiments from our group showed the exfoliation technique in n-methyl-2-pyrrolidone, an organic solvent that is toxic, flammable, and resulted in low yield during exfoliation. Here, for the first time, we have successfully performed exfoliation of LVO in aqueous media and obtained few layered nanoflakes with high yield after centrifugation. Despite the partial solubility of vanadium oxide in water, these nanoflakes suspended in aqueous media maintained chemical stability and readily assembled into a free-standing film using vacuum filtration. The LVO nanoflake films have a two-dimensional (2D) layered morphology as confirmed by SEM and maintain the bilayered structure as confirmed by XRD. Due to the hydrated nature of LVO, we also highlight the importance of controlling interlayer water content with vacuum drying for achieving better cycling stability. The comparison of a 105°C and 200°C vacuum drying temperature and corresponding interlayer water content was carried out using XRD, TGA, and Raman spectroscopy characterization methods. The 200°C vacuum dried LVO nanoflake cathode achieved an initial ion storage capacity of 212 mAh g-1 which was 32.5% higher than the sample dried at 105°C. In addition, galvanostatic cycling experiments conducted for the 200°C vacuum dried LVO nanoflake cathode show there were significant improvements in capacity retention by ~35%, compared to the 105°C dried sample, after 100 cycles at a current density of 20 mA g-1. Subsequently, dispersions of LVO and Ti3C2Tx flakes in water were combined in different weight ratios of 9:1, 4:1, and 1:1 LVO to Ti3C2Tx. The heterostructure electrostatic assembly was facilitated by the introduction of a cationic species into the mixed suspensions. Resistivity measurements showed that heterostructure films achieved electronic conductivities as high as ~105 higher than pristine LVO. Through electrochemical testing, the 9:1 heterostructure cathodes delivered the highest ion storage capacity of 167 mAh g-1. At the cost of lower capacity (125.3 mAh g-1), the 4:1 heterostructures maintain a superior capacity retention of ~96% after 10 cycles. Furthermore, rate capability experiments for the 9:1 heterostructure cathodes demonstrate that the addition of 10 wt % Ti3C2Tx to LVO enables greater tolerance to high current densities with a capacity retention of ~90% after cycling through increasing current densities. In this work we also show that increased capacities can be acquired upon the extension of the potential window below 2V covering where Ti3C2Tx exhibits redox activity. These results demonstrate an environmentally friendly and safe approach to obtaining 2D LVO nanoflakes and offers pathways to constructing novel vanadium oxide based 2D heterostructures for improving electrochemical performance in energy storage devices.

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Han, Jinkyu, Lei Wang, and Stanislaus S. Wong. "Morphology and dopant-dependent optical characteristics of novel composite 1D and 3D-based heterostructures of CdSe nanocrystals and LaPO4:Re (Re = Eu, Ce, Tb) metal phosphate nanowires." RSC Adv. 4, no. 66 (2014): 34963–80. http://dx.doi.org/10.1039/c4ra05933f.

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Prakash, Varnika, Raul D. Rodriguez, Ammar Al-Hamry, Anna Lipovka, Elena Dorozhko, Oleksandr Selyshchev, Bing Ma, et al. "Flexible plasmonic graphene oxide/heterostructures for dual-channel detection." Analyst 144, no. 10 (2019): 3297–306. http://dx.doi.org/10.1039/c8an02495b.

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Li, Yuan, and Nitin Chopra. "Fabrication of thermally-conductive carbon nanotubes-copper oxide heterostructures." MRS Proceedings 1543 (2013): 119–24. http://dx.doi.org/10.1557/opl.2013.673.

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ABSTRACTA complete dry processing route is developed for the fabrication of thermally-conductive carbon nanotube (CNT)-copper oxide (CuOx) heterostructures. This was achieved by the deposition of copper (Cu) onto CNTs and subsequent annealing in Ar and air environment to convert the coated Cu into CuOx nanoparticles. The survivability and diameters of CNTs were studied to ensure their integrity after the multiple processing steps and annealing temperatures (400 °C). The as-produced CNTs, air/Ar-annealed CNTs, Cu-coated CNTs, and CNT-CuOx heterostructures were characterized to study their structure, phase, and morphology using microscopy, elemental analysis, X-ray diffraction, and sheet resistance. It was observed that CNTs could survive the processing conditions and became coated with CuOx nanoparticles. The sheet resistance of CNTs coated with CuOx nanoparticles was ∼4 times greater than the as-produced CNTs. The Raman spectroscopy-based estimation of thermal conductivity of CNTs and CNT-CuOx heterostructures showed 2-7 times enhancement for the latter as compared to pure CuOx. In conclusion, such hybrid CNT-based heterostructures are promising for applications in thermal management.

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Quintela, Camilo X., Kyung Song, Ding-Fu Shao, Lin Xie, Tianxiang Nan, Tula R. Paudel, Neil Campbell, et al. "Epitaxial antiperovskite/perovskite heterostructures for materials design." Science Advances 6, no. 30 (July 2020): eaba4017. http://dx.doi.org/10.1126/sciadv.aba4017.

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Engineered heterostructures formed by complex oxide materials are a rich source of emergent phenomena and technological applications. In the quest for new functionality, a vastly unexplored avenue is interfacing oxide perovskites with materials having dissimilar crystallochemical properties. Here, we propose a unique class of heterointerfaces based on nitride antiperovskite and oxide perovskite materials as a previously unidentified direction for materials design. We demonstrate the fabrication of atomically sharp interfaces between nitride antiperovskite Mn3GaN and oxide perovskites (La0.3Sr0.7)(Al0.65Ta0.35)O3 and SrTiO3. Using atomic-resolution imaging/spectroscopic techniques and first-principles calculations, we determine the atomic-scale structure, composition, and bonding at the interface. The epitaxial antiperovskite/perovskite heterointerface is mediated by a coherent interfacial monolayer that interpolates between the two antistructures. We anticipate our results to be an important step for the development of functional antiperovskite/perovskite heterostructures, combining their unique characteristics such as topological properties for ultralow-power applications.

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Стрюков, Д. В., В. М. Мухортов, Ю. И. Головко, and С. В. Бирюков. "Особенности сегнетоэлектрического состояния в двухслойных гетероструктурах на основе титаната бария-стронция." Физика твердого тела 60, no. 1 (2018): 113. http://dx.doi.org/10.21883/ftt.2018.01.45297.186.

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AbstractThe structural properties of one- and two-layer heterostructures based on the barium–strontium titanate of various compositions deposited by the Frank–Van der Merve on a magnesium oxide substrate have been studied. The heterostructures have been prepared by the rf sputtering of the stoichiometric ceramic targets in a Plazma 50 SE deposition system. The principal difference of this method of deposition from known analogs is that the growth of single-crystal films occurs from a disperse oxide phase formed in the plasma of a high-current rf discharge during the ceramic target sputtering at the cluster level. The peculiarities of the manifestation of the ferroelectric state in the two-layer heterostructures when changing the sequence order of the films with various compositions of barium–strontium titanate.

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Fukatsu, S., Y. Kishimoto, Y. Ishikawa, and N. Shibata. "Si(Ge)/oxide-based heterostructures and their applications to optoelectronics." Applied Surface Science 159-160 (June 2000): 472–80. http://dx.doi.org/10.1016/s0169-4332(00)00153-7.

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29

Chen, Yunzhong, Nini Pryds, Josée E. Kleibeuker, Gertjan Koster, Jirong Sun, Eugen Stamate, Baogen Shen, Guus Rijnders, and Søren Linderoth. "Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures." Nano Letters 11, no. 9 (September 14, 2011): 3774–78. http://dx.doi.org/10.1021/nl201821j.

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30

Jaiswal, A. K., R. Schneider, M. Le Tacon, and D. Fuchs. "Magnetotransport of SrIrO₃-based heterostructures." AIP Advances 12, no. 3 (March 1, 2022): 035120. http://dx.doi.org/10.1063/9.0000325.

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Transition-metal oxide (TMO) based heterostructures provide fertile playground to explore or functionalize novel quantum materials. In this regard, the combination of 3 d and 5 d TMOs have gained special interest because of the simultaneous appearance of strong spin–orbit coupling and electron correlation at the interface of those heterostructures. Artificial breaking of the inversion symmetry in heterostructures may also result in a distinct interfacial Dzyaloshinskii-Moriya interaction (DMI) and the formation of non-collinear magnetic spin structures in case of magnetic TMOs. Among the 5 d TMOs, SrIrO3 (SIO) has gained significant attention because of its large spin–orbit coupling and the semi-metallic ground state, which are highly susceptible to structural distortions. Here, we report on the preparation and the characterisation of structural, electronic and magnetic properties of epitaxial heterostructures consisting of the 5 d TMO SIO and the 3 d antiferromagnetic insulator LaFeO3.

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Zhang, Lijia, Zhongbin Luo, Lingshan Su, and Dianping Tang. "A surface plasmon resonance enhanced photoelectrochemical immunoassay based on perovskite metal oxide@gold nanoparticle heterostructures." Analyst 144, no. 19 (2019): 5717–23. http://dx.doi.org/10.1039/c9an01395d.

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32

Bu, Fan-Xing, Li Xu, Wei Zhang, Chuan-Yin Jin, Rui-Juan Qi, Rong Huang, and Ji-Sen Jiang. "A versatile strategy to construct multifunctional metal oxide@cyanometallate-based coordination polymer heterostructures." Chemical Communications 51, no. 28 (2015): 6198–201. http://dx.doi.org/10.1039/c4cc10097b.

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We have developed a novel and versatile spatially confined self-assembly strategy to integrate cyanometallate-based coordination polymers with functional metal oxides into well-defined core@shell heterostructures with various structures, compositions, sizes and morphologies.

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33

Abadi, M. Tommy Hasan, Nurma Ari Sofa, Siti Zulaikah, and Nandang Mufti. "Influence of Au Sputtered in ZnO/Au/PANI Heterostructures Film for Photoelectrochemical Cells." Materials Science Forum 1028 (April 2021): 117–26. http://dx.doi.org/10.4028/www.scientific.net/msf.1028.117.

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A heterostructure system based on zinc oxide (ZnO), Gold (Au), and polyaniline polymer (PANI) nanoparticles has been developed to provide an efficient and effective photoelectrochemical energy conversion system. The ZnO/Au/PANI heterostructure system promotes Au as a mediator for electron transfer from the PANI conduction band to the ZnO valence band. A state of electrons being excited has resulted in the photons' charge transfer, which accumulated in ZnO and the holes concentrated in PANI. In this study, we investigated the effect of the deposition time of Au on ZnO/Au/PANI film on photoelectrochemical (PEC) performance. ZnO/Au/PANI films were prepared using spin-coating and DC-Sputtering methods for Au deposition. We found that the effect deposition time of Au in the ZnO/Au/PANI film heterostructural system shows good reduction-oxidation and photocatalytic activity due to the vibration of O-H bond groups in the film.

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34

Lichtensteiger, Céline. "InteractiveXRDFit: a new tool to simulate and fit X-ray diffractograms of oxide thin films and heterostructures." Journal of Applied Crystallography 51, no. 6 (October 18, 2018): 1745–51. http://dx.doi.org/10.1107/s1600576718012840.

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35

Ploog, Klaus H. "Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision." Физика и техника полупроводников 52, no. 5 (2018): 513. http://dx.doi.org/10.21883/ftp.2018.05.45857.46.

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AbstractIn this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

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36

Vengalis, B., K. Šliužienė, and V. Lisauskas. "Growth and Investigation of Oxide Heterostructures Based on Half-Metallic Fe3O4." Acta Physica Polonica A 105, no. 6 (June 2004): 659–65. http://dx.doi.org/10.12693/aphyspola.105.659.

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37

Wang, Kai, He Zheng, Guangyu Wen, Ligong Zhao, Fan Cao, Yinghao Lv, Yanjie Wei, Peili Zhao, Jianbo Wang, and Shuangfeng Jia. "Modulating domain structures in Al 2 O 3 -based oxide heterostructures." Materials Research Bulletin 106 (October 2018): 465–70. http://dx.doi.org/10.1016/j.materresbull.2018.06.042.

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38

Zhang, Yiteng, Yanqiang Cao, Haihua Hu, Xi Wang, Pengzheng Li, Yu Yang, Jie Zheng, et al. "Flexible Metal–Insulator Transitions Based on van der Waals Oxide Heterostructures." ACS Applied Materials & Interfaces 11, no. 8 (February 2019): 8284–90. http://dx.doi.org/10.1021/acsami.8b22664.

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39

Li, Jingyu, Yuanxu Wang, Guangbiao Zhang, Huabing Yin, Dong Chen, Wei Sun, Beibei Shi, and Zhenxiang Cheng. "Seeking large Seebeck effects in LaX(X = Mn and Co)O3/SrTiO3 superlattices by exploiting high spin-polarized effects." Physical Chemistry Chemical Physics 21, no. 27 (2019): 14973–83. http://dx.doi.org/10.1039/c9cp02486g.

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SrTiO₃-based transition-metal oxide heterostructures with superconducting, ferromagnetic, ferroelectric, and ferroelastic properties exhibit high application potential in the fields of energy storage, energy conversion, and spintronic devices.

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40

Eom, C. B., R. J. Cava, Julia M. Phillips, and D. J. Werder. "Epitaxial thin films and heterostructures of a copper‐oxide‐based isotropic metallic oxide (La8−xSrxCu8O20)." Journal of Applied Physics 77, no. 10 (May 15, 1995): 5449–51. http://dx.doi.org/10.1063/1.359240.

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41

Zharkov, D. K., A. V. Leontyev, D. P. Pavlov, and R. F. Mamin. "Features of the Photoinduced Conductivity of Heterostructures Based on Complex Lanthanum Oxide and Strontium Oxide." Bulletin of the Russian Academy of Sciences: Physics 83, no. 12 (December 2019): 1473–74. http://dx.doi.org/10.3103/s1062873819120323.

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42

Wang, Yaqin, Wu Tang, Jianli Cheng, Safdar Nazir, and Kesong Yang. "High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study." Physical Chemistry Chemical Physics 18, no. 46 (2016): 31924–29. http://dx.doi.org/10.1039/c6cp05572a.

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First-principles electronic structure calculations predict that SrGeO₃ and BaSnO₃ can be substrate materials for achieving a high-mobility two-dimensional electron gas in perovskite oxide heterostructures.

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43

Kim, Ji Eun, Van Tu Vu, Thi Thanh Huong Vu, Thanh Luan Phan, Young Rae Kim, Won Tae Kang, Kunnyun Kim, Young Hee Lee, and Woo Jong Yu. "A Non-Volatile Memory Based on NbOx/NbSe2 Van der Waals Heterostructures." Applied Sciences 10, no. 21 (October 28, 2020): 7598. http://dx.doi.org/10.3390/app10217598.

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Two-dimensional (2D) van der Waals (vdW) layered transition metal dichalcogenides (TMDs) materials have been receiving a huge interest due to atomically thin thickness, excellent optoelectronic properties, and free dangling bonds. Especially the metallic TMDs, such as MoTe2 (1T’ phase), NbS2, or NbSe2, have shown fascinating physical properties through various applications, such as superconductor and charge density wave. However, carrier transport of metallic TMDs would be degraded due to the poor stability in ambient conditions. To date, achieving both high device performance and long-term stability is still a huge challenge. Thus, an alternative way to develop both unavoidable native oxide and metallic TMDs is under consideration for new era research. In this respect, 2D metallic TMD materials have attracted high attention due to their great potential in neuromorphic-based devices with metal-insulator-metal structures, making it possible to produce scalable, flexible, and transparent memory devices. Herein, we experimentally demonstrated a synthesized metallic NbSe2 by a chemical vapor deposition method with a highly uniform, good shape distribution and layer controller ranging from 2–10 layers. Together, for the first time, we proposed the NbOx/NbSe2 heterostructure memristor device based on the native NbOx oxide on the interface of multi-layer NbSe2 flakes. The ultra-thin native NbOx oxide of 3 nm was formed after a period of oxidation time under air condition, which acts as a memristive surface in the Au-NbOx-Au lateral memristor device, in which oxygen vacancies form a conductive filament. Our NbOx/NbSe2 hetero-tructured memristor exhibits a stable memory window, a low-resistance-state/high-resistance-state ratio of 20, and stable endurance properties over 20 cycles at a low working voltage of 1 V. Furthermore, by the retention property test, non-volatile characteristics were confirmed after over 3000 s in our best data. Through a systematic study of the NbOx/NbSe2 heterostructured memristor device, this report will open new opportunities for next-generation memory devices application.

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44

Sirotkin, V. V., N. A. Tulina, A. N. Rossolenko, and I. Yu Borisenko. "Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds." Bulletin of the Russian Academy of Sciences: Physics 80, no. 5 (May 2016): 497–99. http://dx.doi.org/10.3103/s1062873816050191.

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45

Buonsanti, Raffaella, Etienne Snoeck, Cinzia Giannini, Fabia Gozzo, Mar Garcia-Hernandez, Miguel Angel Garcia, Roberto Cingolani, and Pantaleo Davide Cozzoli. "Colloidal semiconductor/magnetic heterostructures based on iron-oxide-functionalized brookite TiO2 nanorods." Physical Chemistry Chemical Physics 11, no. 19 (2009): 3680. http://dx.doi.org/10.1039/b821964h.

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46

Durand, O., D. Rogers, F. Hosseini Teherani, M. Andrieux, and M. Modreanu. "Studies of oxide-based thin-layered heterostructures by X-ray scattering methods." Thin Solid Films 515, no. 16 (June 2007): 6360–67. http://dx.doi.org/10.1016/j.tsf.2006.11.111.

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47

Wang, Miao, Xiaojuan Lian, Yiming Pan, Junwen Zeng, Chengyu Wang, Erfu Liu, Baigeng Wang, J. Joshua Yang, Feng Miao, and Dingyu Xing. "A selector device based on graphene–oxide heterostructures for memristor crossbar applications." Applied Physics A 120, no. 2 (May 13, 2015): 403–7. http://dx.doi.org/10.1007/s00339-015-9208-y.

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48

Dey, Urmimala, Swastika Chatterjee, and A. Taraphder. "Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control." Physical Chemistry Chemical Physics 20, no. 26 (2018): 17871–80. http://dx.doi.org/10.1039/c8cp01500g.

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It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players.

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Shang, Jie, Gang Liu, Huali Yang, Xiaojian Zhu, Xinxin Chen, Hongwei Tan, Benlin Hu, Liang Pan, Wuhong Xue, and Run-Wei Li. "Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures." Advanced Functional Materials 24, no. 15 (November 27, 2013): 2171–79. http://dx.doi.org/10.1002/adfm.201303274.

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Yu, Sujing, Dongzhi Zhang, Yu Zhang, Wenjing Pan, Benjamin Edem Meteku, Fangdu Zhang, and Jingbin Zeng. "Green light-driven enhanced ammonia sensing at room temperature based on seed-mediated growth of gold-ferrosoferric oxide dumbbell-like heteronanostructures." Nanoscale 12, no. 36 (2020): 18815–25. http://dx.doi.org/10.1039/d0nr05530a.

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