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Journal articles on the topic 'Oxide and sulphide thin films'

Author: Grafiati

Published: 18 May 2024

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1

Weng, Shixing, and Michael Cocivera. "Cadmium sulphide prepared from cadmium oxide thin films." Solar Energy Materials and Solar Cells 36, no. 3 (March 1995): 301–9. http://dx.doi.org/10.1016/0927-0248(94)00183-9.

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2

Kumar, Rajesh, and Swati Chawla. "Optical, Structural and Gas Sensing Studies on Tin Oxide Thin Films." Asian Journal of Chemistry 31, no. 8 (June 28, 2019): 1805–8. http://dx.doi.org/10.14233/ajchem.2019.22054.

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In this paper, pure and copper doped tin oxide thin films were grown on glass substrates by thermal evaporation technique for gas sensing applications. Optical, structural and gas sensing properties were investigated for their application for gas sensing applications. The thickness of the samples was kept about 300 nm. The films were annealed at 400 ºC for 4 h in the presence of air. The gas sensing studies were carried out for hydrogen sulphide and ethanol gas. The sensitivity was quite high for hydrogen sulphide gas but little sensitivity towards hydrocarbon gases.

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3

Ho, Soonmin. "Recent advancement in the synthesis of zinc sulphide thin films." Research Journal of Chemistry and Environment 28, no. 6 (April 30, 2024): 87–100. http://dx.doi.org/10.25303/286rjce870100.

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This research work has given an overview on the preparation of zinc sulphide thin films on different types of substrates (quartz, soda lime glass, silicon, polyethylene terephthalate film, fluorine-doped tin oxide glass, indium tin oxide coated glass, silica, stainless steel, mica, microscopy glass slide and (100) GaAs substrate) using different types of deposition methods. XRD data showed information about the different phases (cubic, wurtzite and hexagonal) presented in the obtained as-deposited films and annealed samples. Based on optical studies, the band gap was observed in the range of 2.6 eV to 3.87 eV with good absorption coefficient value (105 to 106 cm-1). Experimental results indicated these films could be used in solar cell applications, anti-reflection coating, photocatalysts, photo detector devices and laser-oriented coating applications.

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4

Thanikaikarasan, S., T. Mahalingam, S. Veeramuthumari, and Luis Ixtlilco. "Electrochemical Growth and Characterization of Lead Sulphide Thin Films." Journal of New Materials for Electrochemical Systems 16, no. 2 (April 15, 2013): 133–37. http://dx.doi.org/10.14447/jnmes.v16i2.33.

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Growth of lead sulphide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath containing Pb(CH3COO)2 and Na2S2O3. X-ray diffraction pattern showed that the deposited films possess cubic structure with most prominent reflection along (200) plane. The dependency of microstructural parameters such as crystallite size, strain and dislocation density with film thickness has been analyzed. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films possess a direct band gap value of 0.37 eV.

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5

Krishnaveni, Arjunan, Gnanasangeetha Selvaraj, Susmitha Joseph, Susithra Sivam, Thomas Makshiya, Anitha Nilavan, Susai Rajendran, Časlav Lacnjevac, and Abdulhameed Al-Hashem. "Synthesis of copper sulphide thin film on Indium Tin Oxide glass plate by SILAR method and its characterization." Zastita materijala 64, no. 4 (2023): 468–77. http://dx.doi.org/10.5937/zasmat2304468k.

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Thin film of copper sulphide has been deposited on Indium Tin Oxide (ITO) glass plate. This film has been characterized by UV-Visible reflectance spectroscopy, FTIR spectroscopy, EDAX, and SEM. The film has been subjected to polarization study by immersing in sea water. The above studies on the thin film has been compared with copper sulphide prepared by chemical method; that is by mixing a solution of copper sulphate and sodium sulphide solution. For comparison study methods such as UV-Visible reflectance and FTIR have been employed. The UV-Visible reflectance spectrum reveals that the band gap of the copper sulphide film is 1.823eV. This indicates that the film functions as semi conductor. The UV-Visible absorption study of the film indicates that the lmax appears at 310 nm. The FTIR study of the copper sulphide film confirms the presence of CuS. The polarization study reveals that the linear polarization resistance (LPR) value decreases, when compared to ITO plate immersed in sea water. This indicates that the current flowing through the thin film increases. Such a finding can be used in solar cells. This is supported by the fact that the current flowing through the thin film, when it is immersed in sea water increases, when compared to the current flowing through the empty glass plate (without black coating) is immersed in sea water. This is further supported by the fact that for black thin film, the band gap decreases after coating. The EDAX study confirms the presence of elements Cu and S. The SEM study reveals the presence of thin film of copper sulphide on the ITO glass plate. The particle size of the copper sulphide is in the range of 101.1nm, 107.8nm and 114.5nm. Thus it is encouraging to note that copper sulphide nano particles have been prepared by SILAR method.

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6

Aricò, A. S., M. Pieruccini, G. Monforte, V. Antonucci, N. Giordano, and P. L. Antonucci. "Electrochemical deposition of iron sulphide thin films on tin oxide substrates." Materials Chemistry and Physics 34, no. 3-4 (June 1993): 263–69. http://dx.doi.org/10.1016/0254-0584(93)90045-n.

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7

WONG, P. C., Y. S. LI, M. Y. ZHOU, and K. A. R. MITCHELL. "XPS STUDIES OF THE STABILITY OF A MIXED ZIRCONIUM OXIDE AND SULPHIDE THIN FILM." Surface Review and Letters 02, no. 02 (April 1995): 165–69. http://dx.doi.org/10.1142/s0218625x95000170.

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A 25 Å film formed by depositing zirconium (~2 Å min –1) onto gold foil in the presence of H 2 S (~5×10−8 mbar ) and H 2 O (~1×10−9 mbar ) has been studied by XPS. This film has an outer region composed of a mixed zirconium oxide/sulphide, while below there is metallic zirconium plus Zr/Au alloy in contact with gold. This film appears stable on heating to 400°C under UHV insofar as the sulphide part does not change, although the oxide part increases apparently as a result of some reaction of metallic zirconium with ambient water. By contrast, when this preheated film at room temperature was treated with a hydrogen plasma, the sulphide component was completely removed and the whole film was converted to the ZrO 2-like form with enhanced formation of OH groups. The hydrogen plasma treatment is therefore capable of desulphurizing the mixed zirconium oxide/sulphide film.

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8

Raj, V. Bhasker, Harpreet Singh, A. Theodore Nimal, M. U. Sharma, Monika Tomar, and Vinay Gupta. "Utilization of Mass and Elastic Loading in Oxide Materials Based SAW Devices for the Detection of Mustard Gas Simulant." Advanced Materials Research 488-489 (March 2012): 1558–62. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.1558.

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The properties (mass loading and elastic changes) of different oxide materials (ZnO, TeO2, SnO2, TiO2) in thin film form has been explored for the enhanced detection of DBS (di butyl sulphide), a simulant of sulphur mustard gas. All the four oxide materials are deposited on to the surface of SAW (Surface Acoustic Wave) devices to impart sensitivity and selectivity. ZnO and SnO2 films are crystalline whereas TiO2 and TeO2 films are amorphous in nature. All the films are transparent with transparency greater than 75 % in the visible region. The SAW devices coated with different oxide materials were placed in the feedback loop of colpitt oscillator. With the exposure of DBS vapors, differential frequency increases for TiO2 thin films whereas for other oxide coatings (ZnO, TeO2 and SnO2) it decreases. ZnO coated SAW sensor is found to be maximum sensitive to DBS vapors. Investigation of sensing mechanism revealed that mass loading effect is pronounced in TiO2 thin film whereas for other films change in elasticity is dominant. The oxide coatings are very less sensitive to the other interferants.

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9

Rogalski, M. S., V. Besserguenev, N. R. A. Barata, and R. Baltazar. "CVD synthesis and CEMS study of Fe sulphide and oxide thin films." IEEE Transactions on Magnetics 39, no. 5 (September 2003): 2696–98. http://dx.doi.org/10.1109/tmag.2003.815565.

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10

Zhu, Hui, Jian Feng Huang, Li Yun Cao, Yan Wang, and Xie Rong Zeng. "Effect of Deposition Voltage on the Composition, Morphology and Optical Properties of ZnS Thin Films Prepared by Cathodic Electrodeposition." Advanced Materials Research 105-106 (April 2010): 348–50. http://dx.doi.org/10.4028/www.scientific.net/amr.105-106.348.

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Zinc sulphide (ZnS) thin films were deposited on the indium tin oxide (ITO) substrates by a novel, simple cathodic electrodeposition method under atmospheric pressure. These thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectrum (PL) at room temperature. The effects of deposition voltage on the phase composition, morphology and photoluminescence behavior of the thin films were investigated. XRD analysis shows that the deposited thin films is highly preferential growth along (200) orientation. Both AFM and XRD analyses indicate that the surface of the ZnS thin films is composed of uniform grains of around 50 nm in diameter. With the increase in the deposition voltages, the crystallization of the obtained thin films improves and the grain size of the ZnS thin films increases. Photoluminescence emission peaks are observed at at 475~490 nm and 500 ~530 nm at room temperature for an excitation of 210 nm.

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11

Wong, King Leung, Hung En Chen, and Wen Lih Chen. "Study on the Buffer Layer of CIS Thin Film Solar Cell by Separate-Melting Chemical Bath Deposition Methods." Advanced Materials Research 512-515 (May 2012): 178–81. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.178.

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In this work, cadmium sulphide (CdS) buffer layer of CuInSe2 (CIS) thin film solar cell is fabricated by separate-melting Chemical Bath Deposition (CBD) methods. The reason of adopting the CdS thin film as the buffer layer of CIS thin film solar cell is that the CdS can act as energy gap buffer and reduce the band-offset between CIS absorbing layer and the Transparent Conductive Oxide layer. The CdS thin films are generated by the separate-melting CBD methods in situation of atmosphere. In order to analyze the characteristics of the CdS thin films conveniently, the CdS thin films are firstly fabricated on Soda-lime, and the final found optimal CdS thin film is fabricated on the CIS/Mo/Soda-lime glasses. Then the p-n diode characteristic of the CdS/CIS/Mo/Soda-lime glasses is measured by four-point probe. And the CdS thin films are fabricated by the separate-melting CBD methods through various combinations of time interval from 40 and 60 minutes and temperature range from 70,75,80 and 85°C. It is found that the combination of 85°C and 60 minutes is optimal to obtain smoother surface and more uniform thickness of CdS thin film. Additionally from optical characteristic analysis, in situation of emitted light wave length 500 nm, the transmittance of the cadmium sulphide thin film is 61%. Meanwhile, the band gap is close to theoretical value of 2.4 eV.

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12

Hamza, Djamel Eddine, Leila Lamiri, Assia Tounsi, Amor Aziz, and Mohammad Alam Saeed. "Times effect on morphological, structural and optical behaviors of cds thin films for photoelectrochemical cells application." Journal of Fundamental and Applied Sciences 14, no. 3 (June 5, 2023): 548–66. http://dx.doi.org/10.4314/jfas.1242.

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Cadmium Sulphide thin films have been successfully electrodeposited on a conducting Indium-Tin-Oxide (ITO) glass substrate, with different deposition time (10 min, 20 min, and 30 min). The Scanning electron microscopy (SEM), UV-Vis spectrophotometry, X-ray diffraction (XRD), and Atomic force microscopy (AFM) were used to characterize the morphological of films obtained. Moreover, Mott–Schottky (MS) measurements and Photoelectrochemical (PEC) measurements were carried out to study their structural, optical and electrical properties respectively. XRD result points to high crystallinity oriented along (002) planes. The studies reveal that the optical transmission increases with decreasing time of deposition. Mott-Schottky and Photoelectrochemical studies indicates that the CdS thin films display n-type semiconductor, which allows used as layer in photovoltaic cell applications.

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13

Nwori, Augustine Nwode, Nnaedozie Laz Ezenwaka, Ifenyinwa Euphemia Ottih, Ngozi, Agatha Okereke, and Nonso Livinus Okoli. "Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications." Journal of Modern Materials 8, no. 1 (December 4, 2021): 40–51. http://dx.doi.org/10.21467/jmm.8.1.40-51.

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Semiconductor thin films of lead manganese sulphide (PbMnS) have been successfully deposited on florinated tin oxide (FTO) conductive glass substrate using an electrodeposition method. Lead acetate (Pb(CH3COO)2), manganese sulphate (MnSO4.H2O) and thiourea (CH4N2S) were the precursor used for lead (Pb2+), manganese (Mn2+) and sulphur (S2-) sources respectively. The concentration of manganese (Mn2+) was varied while keeping the concentrations of Pb2+ and S2- constant at 0.2 M and 0.1 M respectively. The deposited films were annealed at temperature of 250 oC and subjected for optical, electrical, structural and morphological characterizations. The results of the characterizations showed that the deposited thin films of PbMnS have high absorbance, high absorption coefficient throughout VIS and NIR regions. The band gap energy of the films is tuned to the order of 1.9 eV to 2.0 eV and tends to constant as concentration of Mn2+ increased. The electrical properties (electrical resistivity and conductivity) of the films are dependent on the concentration of Mn2+ and film thickness. The range of values of the electrical properties is found to be within the range of values for semiconductor materials. The XRD analysis revealed that the deposited thin films of PbMnS is crystalline but the crystallinity declined with increase in concentration of Mn2+. The SEM morphology showed that the surfaces of the films are highly homogeneous in nature and particle sizes are uniform on the substrate with the majority of the particles been spherical in shape. These observed properties exhibited by the deposited thin films of PbMnS make the films good materials for many optoelectronic and electronic applications such as solar cell, light emitting diode (LED), photodetector etc.

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14

Nomura, Ryoki, Satoru Fujii, Kouichi Kanaya, and Haruo Matsuda. "Oxygen- or sulphur-containing organoindium compounds for precursors of indium oxide and sulphide thin films." Polyhedron 9, no. 2-3 (January 1990): 361–66. http://dx.doi.org/10.1016/s0277-5387(00)80591-4.

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15

Ibanga, E. J., C. Le Luyer, and J. Mugnier. "Zinc oxide waveguide produced by thermal oxidation of chemical bath deposited zinc sulphide thin films." Materials Chemistry and Physics 80, no. 2 (May 2003): 490–95. http://dx.doi.org/10.1016/s0254-0584(02)00552-7.

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16

Uplane, M. M., S. H. Mujawar, A. I. Inamdar, P. S. Shinde, A. C. Sonavane, and P. S. Patil. "Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide." Applied Surface Science 253, no. 24 (October 2007): 9365–71. http://dx.doi.org/10.1016/j.apsusc.2007.05.069.

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17

Delekar, S. D., and P. P. Hankare. "Chemically Deposited Cd_1-xPb_xSe Thin Films for Photoelectrochemical Studies." Materials Science Forum 764 (July 2013): 293–306. http://dx.doi.org/10.4028/www.scientific.net/msf.764.293.

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Optimum composition of Cd1xPbxSe thin films (0.1 x 0.9) were deposited using single precursor bath containing cadmium sulfate octahydrate, lead nitrate, tartaric acid, potassium hydroxide, ammonia and sodium selenosulfate onto fluorinedoped tin oxide (FTO) glass substrates. The photoelectrochemical (PEC) cells were fabricated using Cd1xPbxSe as an active photoelectrode with sulphide/polysulphide redox couple as an electrolyte and sensitized graphite rod as a counter electrode. The various characteristics of the cells namely currentvoltage (IV), capacitancevoltage (CV) in dark, power output, builtinpotential, photoresponse, spectral response measurements were investigated. The cell performance parameters such as opencircuit voltage (Voc), shortcircuit current (Isc), series resistance (Rs), shunt resistance (Rsh), conversion efficiency (η), fill factor (FF), junction ideality factor (nd), builtinpotential (ΦB), flatband potential (Vfb) were evaluated. PEC characteristics reveal ntype semiconducting nature for Cd1xPbxSe thin films with lead composition x < 0.5, while ptype nature for remaining Cd1xPbxSe thin films. Among the various cells, the maximum PEC efficiency (η = 1.401 %) was found to Cd0.7Pb0.3Se thin films; due to its increase in opencircuit voltage (225 mV) as well as shortcircuit current (3.983 mA/cm2),decrease in resistance (Rs= 0.75 kΩ and Rsh= 331 Ω), and increase in photoelectrode absorption as compared to other thin film materials.

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18

Sangamesha, M. A., K. Pushpalatha, G. L. Shekar, and S. Shamsundar. "Preparation and Characterization of Nanocrystalline CuS Thin Films for Dye-Sensitized Solar cells." ISRN Nanomaterials 2013 (August 6, 2013): 1–8. http://dx.doi.org/10.1155/2013/829430.

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A dye-sensitized nanocrystalline copper sulphide (CuS) solar cell is developed using crystal violet (CV) as a photosensitizer. Nanocrystalline CuS thin film is deposited on indium tin oxide- (ITO-) coated glass substrate by chemical bath deposition (CBD) technique. These thin films are characterized for their structural, optical and electrical properties using X-ray diffractometer (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). Optical absorbance measurements from UV-visible spectrometer at normal incidence of light in the wavelength range of 320–1100 nm and current-voltage (I-V) measurements were also made. The deposited CuS thin film on ITO-coated glass substrate may be used as a photo electrode in the fabrication of dye-sensitized solar cell (DSSC). The carbon soot collected on the substrate is used as a counter electrode. The counter electrode coupled with a dye-sensitized CuS thin film along with a redox electrolyte mixture is used to develop a complete photovoltaic cell. The fill factor and efficiency were evaluated for the developed DSSC.

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19

Usha, Sruthi P., Satyendra K. Mishra, and Banshi D. Gupta. "Zinc oxide thin film/nanorods based lossy mode resonance hydrogen sulphide gas sensor." Materials Research Express 2, no. 9 (September 1, 2015): 095003. http://dx.doi.org/10.1088/2053-1591/2/9/095003.

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20

Nissinen, Tomi, Mei Li, Sean A. Davis, and Stephen Mann. "In situ precipitation of amorphous and crystalline calcium sulphates in cellulose thin films." CrystEngComm 16, no. 19 (2014): 3843–47. http://dx.doi.org/10.1039/c4ce00228h.

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Cellulose films regenerated with calcium sulphate are fabricated using N-methylmorpholine N-oxide as a solvent and capping agent for polysaccharide dissolution and nanoparticle stabilization, respectively.

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21

Galtayries, A., S. Wisniewski, and J. Grimblot. "Formation of thin oxide and sulphide films on polycrystalline molybdenum foils: characterization by XPS and surface potential variations." Journal of Electron Spectroscopy and Related Phenomena 87, no. 1 (October 1997): 31–44. http://dx.doi.org/10.1016/s0368-2048(97)00071-6.

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22

Kaminski, P. M., A. Abbas, S. Yilmaz, J. W. Bowers, and J. M. Walls. "High rate deposition of thin film CdTe solar cells by pulsed dc magnetron sputtering." MRS Advances 1, no. 14 (2016): 917–22. http://dx.doi.org/10.1557/adv.2016.45.

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ABSTRACTA new high rate deposition method has been used to fabricate thin film CdTe photovoltaic devices using pulsed dc magnetron sputtering. The devices have been deposited in superstrate configuration on to a commercial fluorine doped tin oxide transparent conductor on soda lime glass. The cadmium sulphide and cadmium telluride thin films were deposited from compound targets. The magnetrons were mounted vertically around a cylindrical chamber and the substrate carrier rotates so that the layers can be deposited sequentially. The substrates were held at 200°C during deposition, a process condition previously found to minimize the stress in the coatings. Optimization of the process involved a number of parameters including control of pulse frequency, power and working gas pressure. The devices deposited using the process are exceptionally uniform enabling the CdTe absorber thickness to be reduced to ∼1um. The as-deposited material is dense and columnar. The cadmium chloride treatment increases the grain size and removes planar defects. The microstructure of the films before and after activation has been characterized using a number of techniques including transmission electron microscopy, Energy Dispersive mapping and these measurements have been correlated to device performance. The deposition rate is much higher than can be obtained with radio-frequency sputtering and is comparable with methods currently used in thin film CdTe module manufacturing such as Vapour Transport Deposition and Close Space Sublimation.

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23

Lee, Sang Hyuk, Bo Hyun Seo, and Jong Hyun Seo. "Micro-Scratch Analysis on Adhesion between Thin Films and PES Substrate." Advanced Materials Research 26-28 (October 2007): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.1153.

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In flexible display, reliability of the thin film/polymer interface is an important issue because adhesion strength dissimilar materials is often inherently poor, and residual stresses arising from thermal mismatches or pressure exerted by vaporized moisture often lead to delaminations of interfaces. In the present study we deposited various thin films such as silicon nitride (SiNx), aluminum metal layer, and indium tin oxide on polyether sulphone (PES) substrate. The film adhesion was determined by micro-scratch test. The adhesion strength, presented by the critical load, Lc, when the film starts to delaminate, was determined as a function of plasma pretreated on PES substrate.

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24

Danamah, Hamdan M., Siddheshwar D. Raut, Zeenat A. Shaikh, and Rajaram S. Mane. "Chemical Synthesis of Bismuth Oxide and Its Ionic Conversion to Bismuth Sulphide for Enhanced Electrochemical Supercapacitor Energy Storage Performance." Journal of The Electrochemical Society 169, no. 12 (December 1, 2022): 120537. http://dx.doi.org/10.1149/1945-7111/acaac9.

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Successive ionic layer adsorption and reaction (SILAR)-based room-temperature (27 °C) chemical synthesis of bismuth oxide (Bi2O3) and its ionic conversion to bismuth sulphide (Bi2S3) has been performed and reported in the present study. A chemical conversion of the bismuth oxide to the bismuth sulphide has been confirmed using changes in the structure, phase, surface elementals , and surface area measurement studies. Both bismuth oxide and bismuth sulphide electrode materials are envisaged in electrochemical measurements wherein, the later has evidenced an enhanced electrochemical performance over the prior. The cycling stability of the Bi2S3 (91% after 2000 cycles) electrode material is also better than the Bi2O3 (87% over 2000 cycles). The as-assembled Bi2S3//Bi2S3 symmetric electrochemical supercapacitor device has adduced 75.3 Wh kg−1 and 749.8 W Kg−1energy and power densities, respectively with nearly 88.8% capacitance retention efficacy even over 2000 redox cycles measured at 10 A g−1. The commercial potential of the Bi2S3//Bi2S3 has been tested by powering the display panel “CNED” consisting nearly 42 LEDs with a full-light intensity.

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25

Mishra, Satyendra K., Samta Rani, and Banshi D. Gupta. "Surface plasmon resonance based fiber optic hydrogen sulphide gas sensor utilizing nickel oxide doped ITO thin film." Sensors and Actuators B: Chemical 195 (May 2014): 215–22. http://dx.doi.org/10.1016/j.snb.2014.01.045.

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26

Mohamad, Fariza, Kah Hao Cheong, Nabiah binti Zinal, Nurliyana binti Mohamad Arifin, Asyikin Sasha binti Mohd Hanif, Nik Hisyamudin Muhd Nor, and Masanobu Izaki. "Cyclic Voltammetry Measurement for n-Type Cu₂O Thin Film Using Copper Sulphate-Based Solution." Key Engineering Materials 730 (February 2017): 119–24. http://dx.doi.org/10.4028/www.scientific.net/kem.730.119.

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Cuprous oxide (Cu2O) is a promising material for solar cell application. Due to its various advantages over silicon material, it has been exploited extensively to be use in photovoltaic cell. Cu2O thin films were electrodeposited in sulfate-based solution. Cyclic voltammorgram (CV) measurement was used to investigate the reduction process under controlled parameters. Deposition potential of-0.1V vs. Ag/AgCl was used for the fabrication of Cu2O thin film based on the CV measurement. CV also revealed that the deposition speed was dependent on the bath pH and the temperature. X-ray diffraction (XRD) measurement, Field Emission Scanning-Electron Microscopy (FE-SEM) and Ultraviolet-visible spectroscopy (UV-Vis) were performed to characterize the deposited thin films. The n-Cu2O was successfully fabricated on FTO glass substrate with (111)-prefered orientation. Surface morphology of the thin films were observed to be in flower-like shape combination with pyramidal and triangular shape.

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27

Rajen Singh, L., and M. A. Hussain. "The temperature dependent current-voltage characteristics of chemically prepared AL/(P)PBS Schottky barrier junction." Chalcogenide Letters 19, no. 2 (February 2022): 131–42. http://dx.doi.org/10.15251/cl.2022.192.131.

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Zinc (Zn) doped nanocrystalline lead sulphide (PbS) thin film is prepared by chemical bath deposition (CBD) method at bath deposition temperature 313K using Zinc Acetate, Lead Acetate and Thiourea. The prepared films is characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Al/(p)PbS Schottky barrier junctions are fabricated onto indium tin oxide (ITO) substrate to study the junction parameters. The Current-Voltage (I-V) characteristics of the junctions is measure in the temperature range of 303 to 333 K and various junction parameters are calculated. The ideality factor (n) and Schottky barrier height ( ) b at different temperatures are found to vary from 5.31 to 4.47 and 0.749 eV to 0.755 eV respectively. The carrier concentration is determined from the capacitance-voltage (C-V) plot and found to be of the order 1016cm-3 .

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28

Stoev, M. D., J. Touskova, and J. Tousek. "X-ray photoelectron spectroscopy, scanning electron microscopy and optical transmittance studies of indium tin oxide and cadmium sulphide thin films for solar cells." Thin Solid Films 299, no. 1-2 (May 1997): 67–71. http://dx.doi.org/10.1016/s0040-6090(96)09085-2.

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29

Jech, Martin, Alexander Hofer, Christian Tomastik, Thomas Wopelka, and Carsten Gachot. "Influence of Artificially Altered Engine Oil on Tribofilm Formation and Wear Behaviour of Grey Cast Cylinder Liners." Lubricants 11, no. 11 (November 4, 2023): 476. http://dx.doi.org/10.3390/lubricants11110476.

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This work investigates the influence of altered engine oil on the tribological performance, focusing in particular on wear and interconnected tribofilm formation. For this purpose, Zinc dialkyldithiophosphate (ZDDP) additivated engine oils of different degradation levels, produced in an artificial oil alteration process, were used in tribometer tests with a nitride steel piston ring against a grey cast iron cylinder liner model contact. Parameters were chosen to simulate the boundary and mixed lubrication regime typical for the top dead centre conditions of an internal combustion engine of a passenger car. Wear of the cylinder liner specimens was continuously monitored during the tribometer tests by the radio-isotope concentration (RIC) method, and tribofilms were posteriorly investigated by X-ray photoelectron spectroscopy (XPS). The results clearly show that the steady-state wear rates for experiments with altered lubricants were significantly lower than for the experiments with fresh lubricants. XPS analysis on the formed tribofilms revealed a decrease in sulphide and an increase in sulphate states for altered oils evaluated at 120 °C oil temperature, correlating with a decrease in steady-state wear rate. This finding emphasizes the role of sulphate species in the tribofilm formation process and its anti-wear capabilities, in contrast to the sulphide species and the (poly-)phosphate species, as outlined in most of the ZDDP literature. Moreover, the RIC signal that represents the amount of wear in the engine oil showed a decrease over time for specific altered lubricants and test conditions. These “negative” trends in the wear signal are remarkable and have been identified as an incorporation of wear particles from the lubricant into the tribofilm. This finding is supported by XPS results that detected an iron-oxide layer with a remarkably similar quantity within the tribofilm on the surface. Based on these findings, an assessment of the minimum film formation rate and particle incorporation rate was achieved, which is an important basis for adequate tribofilm formation and wear models.

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Niedźwiedź, Mateusz, Władysław Skoneczny, Marek Bara, and Grzegorz Dercz. "Thin Al2O3 Coatings Produced by Electrochemical Method, Subjected to Thermo-Chemical Treatment." Coatings 11, no. 11 (October 25, 2021): 1294. http://dx.doi.org/10.3390/coatings11111294.

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The article presents the effect of the anodizing parameters, as well as the thermo-chemical treatment, of Al2O3 layers produced on an aluminum alloy on the characterization of structure, geometrical structure of the surface (SGS), the thickness of the oxide layers, the phase composition, and their microhardness. The oxide layers were produced by the method of direct current anodizing in a three-component electrolyte. Then, thermo-chemical treatment was carried out in distilled water and aqueous solutions of sodium dichromate and sodium sulphate. The anodizing parameters and compounds for the thermo-chemical treatment were selected on the basis of Hartley’s plans. The research showed the effect of anodizing parameters on the thickness of the Al2O3 layers and the increase in the thickness of the layers as a result of the thermo-chemical treatment. The research showed a significant increase in the microhardness of the layers as a result of thermo-chemical treatment and its influence on the phase composition of Al2O3 layers. A significant influence of the thermo-chemical treatment on the geometrical structure of the surface was also found.

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31

Li, Wenbo, Chenghao Xu, Ken Chen, Lanlan Liu, Haiyun Yang, Qiao Cheng, and Minyu Zeng. "Corrosion of Fe-Cr-Si Alloys in Oxidizing and Sulphidizing-Oxidizing Atmospheres." Coatings 12, no. 10 (October 20, 2022): 1588. http://dx.doi.org/10.3390/coatings12101588.

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To clarify the mechanism of the third-element effect in sulphur-containing and sulphur-free oxidation environments, the corrosion behaviours of four kinds of Fe-xCr-ySi (x = 5, 10 at.% and y = 5, 10 at.%) alloys were studied at 600 °C in a H2-CO2 and a H2-CO2-H2S gaseous mixture with the same oxygen partial pressure. The results showed that, in the pure oxidizing atmosphere, thin and slowly growing protective oxide layers were formed on the alloys surfaces. Conversely, all alloys formed a corrosion product layer with an outer layer of FeS and an inner layer of a mix of oxides and sulphides in the oxidizing-sulphidizing atmosphere, which meant that adding Cr into the alloy as the third element had less of an effect on improving the alloy in the harsh sulphidizing-oxidizing environment. The oxidation and sulphidation mechanism as well as the effects of chromium and silicon on the corrosion resistance of the alloys was discussed.

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32

Fu, Chuan Qi, and Zhou Wang. "Study of Tribological Properties of MoS₂/Cu-Fe Matrix Self-Lubricating Composites Prepared by Induction Sintering at Elevated Temperature." Applied Mechanics and Materials 33 (October 2010): 458–62. http://dx.doi.org/10.4028/www.scientific.net/amm.33.458.

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The molybdenum disulfide(MoS2)/copper(Cu)-ferrum(Fe) matrix self-lubricating composites with various amounts of MoS2 additives were prepared by induction heating sintering method combined with the alloying of the Cu-Fe matrix with various metallic elements. As the temperature was increased from room temperature to 800°C, the mechanical and tribological properties of the composites were measured using the universal testing machine and MRH-3 friction-wear tester. The phase compositions and worn surface morphologies of the composites were analyzed by means of X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Meanwhile, wear mechanisms were discussed. It was found that the mechanical and friction/wear properties of MoS2/Cu-Fe matrix self-lubricating composites were related to the induction frequencies and the contents of the MoS2 as the solid lubricant. The increased MoS2 content resulted in increased mechanical and friction/wear properties at first and then decreased subsequently. The composites with proper MoS2 contents and induction frequencies have the lower the friction coefficients and wear rate at room temperature to 800°C. Meanwhile, the self-lubricating films were mainly made up of some compositions, such as pearlite, cementite, sulphide, solid solution alloy of Mo and Fe, molybdenum oxide in elevated temperature; the wear mechanism of composites has been changed from abrasive wear to ploughing wear.

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33

Nair, P. K., O. Gomezdaza, and M. T. S. Nair. "Metal sulphide thin film photography with lead sulphide thin films." Advanced Materials for Optics and Electronics 1, no. 3 (June 1992): 139–45. http://dx.doi.org/10.1002/amo.860010307.

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34

Ashton, L. J., and J. F. B. Hawkes. "Cathodoluminescence in thin zinc sulphide films." Journal of Physics D: Applied Physics 19, no. 7 (July 14, 1986): 1343–52. http://dx.doi.org/10.1088/0022-3727/19/7/023.

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35

Mattern, N., W. Pitschke, and S. Doyle. "Structure of molybdenum sulphide thin films." Acta Crystallographica Section A Foundations of Crystallography 49, s1 (August 21, 1993): c327—c328. http://dx.doi.org/10.1107/s010876737809087x.

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36

Ramirez, Daniel, Gonzalo Riveros, Patricia Díaz, Martin Faundez, Enrique Dalchiele, Ricardo Marotti, Daniel Gau, Carina Cabrera, and Rodrigo Wittwer. "On the Scope of the Oxygen Plasma Treatment on FTO Electrodes for Electrochemical Processes." ECS Meeting Abstracts MA2023-02, no. 16 (December 22, 2023): 1173. http://dx.doi.org/10.1149/ma2023-02161173mtgabs.

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The cleaning and/or activation of electrodes for electrochemical purposes using the oxygen plasma treatment has been widely used because of its proven effectiveness to improve the properties of electrodes. Beyond its cleaning effect, the plasma can either create stepped and functionalized carbon-based materials which are active for specific electroanalytes and increase their capacitance [1]. Prussian Blue can also be activated by creating oxygen rich sites thus enhancing its electrochromism [2]. In the case of transparent conductive oxides (TCOs) electrodes such as FTO and ITO-coated glass this treatment has proven to be suitable in the preparation of spray-pyrolyzed titania thin films used as blocking hole layer or electron transporting layer in efficient third generation solar cells [3]. However, the role of this treatment on TCOs when used for electrochemical purposes has not been deeply explored yet. The reason to carry out this study lies in the great number of electrochemical processes that are usually employed for the growth of wide and middle band gap semiconductor metal oxides and chalcogenides with applications in photoelectrochemical and photovoltaic cells [4]. To assess the role of the oxygen plasma, FTO was chosen as TCO reference material and the effect of different time exposure and power of plasma was analysed by electrochemical polarization in aqueous media for both anodic and cathodic directions. In the former, PbO2 electrodeposition and oxygen evolution reaction (OER) were considered. In the later, hydroxide generating reactions that usually precipitate in presence of transition metal cations were studied: i) the oxygen reduction reaction (ORR, Figure 1), ii) hydrogen peroxide reduction. Further, the reduction of S8 in DMSO media to sulphide ion was also considered as an aprotic media to growth chalcogenides. Interestingly, all these electrochemical reactions exhibited an increased activation overpotential. The behaviour of treated FTO for OER demonstrated the as implanted oxyanions do not act as source of molecular oxygen as previously claimed [5]. This was verified by the poorly response of ORR after anodic polarizations in acid media. Besides, contact angle measurements allowed to estimate the energetic of the FTO surfaces being these energies correlated with open circuit potential values. Capacitance (Mott-Schottky plots), XPS, UPS and UV-Vis spectroscopy were used to study the semiconductor energy levels of both treated and untreated FTO electrodes. The oxyanion implantation in the oxygen vacancies would be responsible of the sharply diminution of the ORR wave. However, the electrochemical response of the well-known Ferri/Ferro couple only suffered changes under highly aggressive treatments, i.e. for long times or power. Meanwhile, XRD data has shown only slight changes in the structural features of FTO. We can conclude that oxygen plasma treatment is not suitable in FTO for electrochemical purposes, contrary to other deposition methods. Surprisingly, an exception in metals deposition (Ni and Zn) was found. References [1] S.C. Wang, K.S. Chang, C.J. Yuan, Enhancement of electrochemical properties of screen-printed carbon electrodes by oxygen plasma treatment, Electrochimica Acta 54 (2009) 4937–4943. [2] A-Y. Kim, J. H. Park, D. Byun, J. Kee Lee, Effect of oxygen plasma treatment on the electrochemical properties of Prussian blue electrodes for transparent electrochromic devices, Thin Solid Films 546 (2013) 58-62. [3] J. Baker, K. Hooper, S. Meroni, A. Pockett, J. McGettrick, Z. Wei, R. Escalante, G. Oskam, M. J. Carnie and T. M. Watson, J. Mater. Chem. A 5 (2017) 18643-18650. [4] A. A. Ojo, I. M. Dharmadasa, Electroplating of Semiconductor Materials for Applications in Large Area Electronics: A Review, Coatings 8 (2018) 262. [5] A. Korjenic and K. S. Raja, Electrochemical Stability of Fluorine Doped Tin Oxide (FTO) Coating at Different pH Conditions, Journal of The Electrochemical Society, 166 (2019) C169-C184. Figure 1

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Bagde, G. D., C. T. Londhe, and A. G. Bagde. "Morphological Studies on Spray Deposited Lanthanum Sulphide (La₂S₃) Thin Films." Key Engineering Materials 705 (August 2016): 283–88. http://dx.doi.org/10.4028/www.scientific.net/kem.705.283.

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The spray pyrolysis was employed to prepare Lanthanum Sulphide (La2S3) thin films on silicon non conducting glass substrate using lanthanum chloride and thioacetamide from aqueous medium. The effect of preparative parameters on film properties was studied. Further thin films characterization was carried out by electrical resistivity, thermoemf, optical, XRD and SEM measurement techniques. The electrical resistivity was the order of 104 – 105 Ω cm and it shows semiconducting behavior. The Thermoemf studies reveal that Lanthanum Sulphide material is P-type. The direct band gap of Lanthanum Sulphide (La2S3) thin films was estimated to be 2.5 eV. The XRD studies indicate that Lanthanum Sulphide (La2S3) thin films are polycrystalline. A morphological study shows that the Lanthanum Sulphide (La2S3) thin films have fibrous network.

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38

Sharma, M. D., and A. Bhargava. "Photocurrent Measurements in Cadmium Sulphide Thin Films." International Journal of Scientific and Research Publications (IJSRP) 11, no. 1 (December 24, 2020): 641–44. http://dx.doi.org/10.29322/ijsrp.11.01.2021.p10977.

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39

Lal, Pyare. "Trap diagnostic of thin cadmium sulphide films." Thin Solid Films 146, no. 2 (January 1987): 139–43. http://dx.doi.org/10.1016/0040-6090(87)90215-x.

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40

Mahalingam, T., and C. Sanjeeviraja. "Characterization of Electrodeposited Zinc Sulphide Thin Films." Physica Status Solidi (a) 129, no. 2 (February 16, 1992): K89—K92. http://dx.doi.org/10.1002/pssa.2211290232.

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41

Dhumure, S. S., and C. D. Lokhande. "Solution growth of silver sulphide thin films." Materials Chemistry and Physics 27, no. 3 (March 1991): 321–24. http://dx.doi.org/10.1016/0254-0584(91)90128-h.

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42

Kamli, Kenza, Zakaria Hadef, Baghdadi Chouial, Beddiaf Zaidi, Bouzid Hadjoudja, and Allaoua Chibani. "Synthesis and characterisation of tin sulphide thin films." Surface Engineering 33, no. 8 (January 30, 2017): 567–72. http://dx.doi.org/10.1080/02670844.2016.1271593.

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43

Rumyantsev, Yu M., N. I. Fainer, M. L. Kosinova, B. M. Ayupov, and N. P. Sysoeva. "RPECVD thin cadmium, copper and zinc sulphide films." Le Journal de Physique IV 09, PR8 (September 1999): Pr8–777—Pr8–784. http://dx.doi.org/10.1051/jp4:1999898.

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44

Otto, K., A. Katerski, A. Mere, O. Volobujeva, and M. Krunks. "Spray pyrolysis deposition of indium sulphide thin films." Thin Solid Films 519, no. 10 (March 2011): 3055–60. http://dx.doi.org/10.1016/j.tsf.2010.12.027.

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45

Omeiri, S., B. Hadjarab, and M. Trari. "Photoelectrochemical properties of anodic silver sulphide thin films." Thin Solid Films 519, no. 13 (April 2011): 4277–81. http://dx.doi.org/10.1016/j.tsf.2011.02.001.

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46

Aricò, A. S., V. Antonucci, P. L. Antonucci, E. Modica, S. Ferrara, and N. Giordano. "Electrodeposition and characterization of iron sulphide thin films." Materials Letters 13, no. 1 (February 1992): 12–17. http://dx.doi.org/10.1016/0167-577x(92)90169-k.

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47

Ristov, M., Gj Sinadinovski, I. Grozdanov, and M. Mitreski. "Chemical deposition of TIN(II) sulphide thin films." Thin Solid Films 173, no. 1 (June 1989): 53–58. http://dx.doi.org/10.1016/0040-6090(89)90536-1.

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48

Reddy, N. Koteeswara, and K. T. Ramakrishna Reddy. "Optical behaviour of sprayed tin sulphide thin films." Materials Research Bulletin 41, no. 2 (February 2006): 414–22. http://dx.doi.org/10.1016/j.materresbull.2005.08.001.

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49

Karanjai, Malay K., and D. Dasgupta. "Cadmium sulphide thin films by the dip technique." Materials Letters 4, no. 8-9 (August 1986): 368–69. http://dx.doi.org/10.1016/0167-577x(86)90072-8.

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50

Nair, M. T. S., and P. K. Nair. "Photoconductive bismuth sulphide thin films by chemical deposition." Semiconductor Science and Technology 5, no. 12 (December 1, 1990): 1225–30. http://dx.doi.org/10.1088/0268-1242/5/12/014.

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