Relevant bibliographies by topics / Oscillators, Electric; Oscillators, Microwave

Academic literature on the topic 'Oscillators, Electric; Oscillators, Microwave'

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Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Oscillators, Electric; Oscillators, Microwave"

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Krasnov, Vladimir M. "A distributed active patch antenna model of a Josephson oscillator." Beilstein Journal of Nanotechnology 14 (January 26, 2023): 151–64. http://dx.doi.org/10.3762/bjnano.14.16.

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Optimization of Josephson oscillators requires a quantitative understanding of their microwave properties. A Josephson junction has a geometry similar to a microstrip patch antenna. However, it is biased by a dc current distributed over the whole area of the junction. The oscillating electric field is generated internally via the ac-Josephson effect. In this work, I present a distributed, active patch antenna model of a Josephson oscillator. It takes into account the internal Josephson electrodynamics and allows for the determination of the effective input resistance, which couples the Josephson current to cavity modes in the transmission line formed by the junction. The model provides full characterization of Josephson oscillators and explains the origin of the low radiative power efficiency. Finally, I discuss the design of an optimized Josephson patch oscillator capable of reaching high efficiency and radiation power for emission into free space.
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Saleh, Khaldoun, Pierre-Henri Merrer, Amel Ali-Slimane, Olivier Llopis, and Gilles Cibiel. "Study of the noise processes in microwave oscillators based on passive optical resonators." International Journal of Microwave and Wireless Technologies 5, no. 3 (April 23, 2013): 371–80. http://dx.doi.org/10.1017/s1759078713000354.

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Two types of optoelectronic oscillators delivering high spectral purity microwave signals are presented in this paper. These oscillators use the Pound–Drever–Hall laser stabilization technique to lock the laser carrier onto two different types of passive optical resonators featuring high-quality factors: a fiber ring resonator (FRR) and a whispering gallery mode monocrystalline disk-shaped micro-resonator. The different noise processes occurring inside these oscillators are discussed. Particular attention is given to the conversion of the laser's amplitude and frequency noise into RF phase noise via the laser stabilization loop and the resonator, and via the photodetector nonlinearity as well. A modeling approach using CAD software is also proposed to qualitatively evaluate laser noise conversion through the optical resonator. Moreover, different contributions of nonlinear optical scattering noise are discussed, mainly in the case of the FRR-based oscillator. When controlling these nonlinear optical effects in the case of the FRR, low-phase noise operation of the oscillator has been achieved, with a −40 dBc/Hz noise level at 10 Hz offset frequency from a 10.2 GHz RF carrier.
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Javalagi, S., V. Reddy, K. Gullapalli, and D. Neikirk. "High efficiency microwave diode oscillators." Electronics Letters 28, no. 18 (1992): 1699. http://dx.doi.org/10.1049/el:19921080.

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Sancho, S., F. Ramirez, and A. Suarez. "General stabilization techniques for microwave oscillators." IEEE Microwave and Wireless Components Letters 15, no. 12 (December 2005): 868–70. http://dx.doi.org/10.1109/lmwc.2005.859991.

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El Ftouh, Hanae, El Bakkali Moustapha, Amar Touhami Naima, and Zakriti Alia. "Ultra low phase noise and high output power monolithic microwave integrated circuit oscillator for 5G applications." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 3 (June 1, 2022): 2689. http://dx.doi.org/10.11591/ijece.v12i3.pp2689-2698.

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novel structure of low phase noise and high output power monolithic microwave integrated circuit (MMIC) oscillator is presented in order to use it in 5G applications. The oscillator is based on the ED02AH process which allows us to design a microwave oscillator keeping a minimum size which is impossible to have it using other technologies since microwave oscillators are sensitive components above 20 GHz. The oscillator is studied, designed, and optimized on a GaAs substrate from the OMMIC foundry using the advanced design system (ADS) simulator in order to obtain a miniaturized oscillator (1.1×1.3 mm<sup>2</sup>) generating two signals of different frequencies f<sub>o1</sub>=26 GHz and f<sub>o2</sub>=30 GHz. The objective is to design an oscillator with high output power and low phase noise while respecting its specifications. The optimization of the proposed microwave oscillator shows satisfying results. Indeed, at 26 GHz and 30 GHz, the output powers are respectively 13.33 dBm and 14.89 dBm. The oscillator produces a sinusoidal signal of 1.5 V and 1.75 V amplitude respectively at 26 GHz and 30 GHz. The oscillator phase noise at f<sub>o1</sub> and f<sub>o2</sub> resonance frequencies using the liquid crystal (LC) resonator shows respectively -109 dBc/Hz and -110 dBc/Hz at 10 MHz offset.
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da C. Brito, L., P. H. P. de Carvalho, and L. A. Bermúdez. "Multi-objective evolutionary optimisation of microwave oscillators." Electronics Letters 40, no. 11 (2004): 677. http://dx.doi.org/10.1049/el:20040423.

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Noskov, V. Ya, and K. A. Ignatkov. "DYNAMIC AUTODYNE AND MODULATION CHARACTERISTICS OF MICROWAVE OSCILLATORS." Telecommunications and Radio Engineering 72, no. 10 (2013): 919–34. http://dx.doi.org/10.1615/telecomradeng.v72.i10.70.

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TIONG, K. K., S. P. KUO, and S. C. KUO. "Optimization of the design of cusptron microwave oscillators." International Journal of Electronics 65, no. 3 (September 1988): 397–408. http://dx.doi.org/10.1080/00207218808945240.

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Giordano, V., P. Y. Bourgeois, Y. Gruson, N. Boubekeur, R. Boudot, E. Rubiola, N. Bazin, and Y. Kersalé. "New advances in ultra–stable microwave oscillators." European Physical Journal Applied Physics 32, no. 2 (October 26, 2005): 133–41. http://dx.doi.org/10.1051/epjap:2005078.

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Sancho, Sergio, Almudena Suarez, Franco Ramirez, and Mabel Ponton. "Analysis of the Transient Dynamics of Microwave Oscillators." IEEE Transactions on Microwave Theory and Techniques 67, no. 9 (September 2019): 3562–74. http://dx.doi.org/10.1109/tmtt.2019.2931009.

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Dissertations / Theses on the topic "Oscillators, Electric; Oscillators, Microwave"

1

Kratzenstein, L. "Electronically tuned 23 GHz Gunn oscillators for a microwave datalink." Master's thesis, University of Cape Town, 1988. http://hdl.handle.net/11427/8327.

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A market has been identified for 23 GHz, short-haul, low-capacity, digital radio. The dissertation presents the development of the varactor controlled Gunn oscillators that constitute the crystal locked microwave sources of the radio. An accurate description of a design procedure for Gunn oscillators at 23 GHz is presented. With reference to advanced modulation methods which require constant modulation indices, a method of linearising the voltage/frequency characteristic of the varactor controlled Gunn oscillator is described, which allows direct modulation of the source at 23 GHz. Due to the wide operating temperature of the radio a technique to temperature compensate the oscillator is presented. The dissertation ends with an investigation how the semiconductor device's spread affects the oscillator characteristics and an evaluation of the noise performance of the Gunn oscillator.
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Vermaak, Elrien. "Development of a low phase noise microwave voltage controlled oscillator." Thesis, Link to the online version, 2008. http://hdl.handle.net/10019/1940.

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Li, Duo Ph D. Massachusetts Institute of Technology. "Attosecond timing jitter modelocked lasers and ultralow phase noise photonic microwave oscillators." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/87930.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 111-119).
Photonic microwave oscillator based on optical frequency comb and ultrastable optical reference cavity represents the state-of-the-art solution to generate X-band microwaves of ultralow phase noise. Such high-quality microwave source enables a range of applications in which frequency stability and timing accuracy are essential to performance. Wide use of this technology, however, requires compact system architecture, low-term stability and low energy consumption, which drive the needs to develop high repetition-rate femtosecond lasers alternative to Ti:sapphire technology, and to explore a feasible means to achieve integrated photonic microwave oscillators. Ultrafast Cr:LiSAF lasers can be directly pumped with low-cost red laser diodes, and the electrical-to-optical conversion efficiency is as high as 10%. High repetition-rate femtosecond Cr:LiSAF lasers are developed with the help of semiconductor saturable absorber technology, efficient dispersion compensation mirror design algorithms, and heat management of the saturable absorber. The I-GHz Cr:LiSAF oscillator generates 55-fs pulses with 110 pJ pulse energy, which represents almost two orders of magnitude improvement in the output peak power over previous results. Timing jitter of 1 00-MHz Cr:LiSAF lasers is measured with a single-crystal balanced optical cross-correlator to be -30 as from 10 kHz to 50 MHz. Pump intensity noise coupled into phase noise through the self-steepening effect proves to be the major noise source. The most recent advance in silicon photonics and wafer-scale three-dimensional integration technology illuminates a pathway toward on-chip photonic microwave oscillators. Phase noise model of the proposed Erbium Silicon Photonics Integrated OscillatoR (ESPIOR) suggests that it is possible to achieve comparable noise performance with the Ti:sapphire-based system, without the need of carrier-envelope-offset frequency detection. A demonstration using fiber-optic components further indicates that it is practicable to realize optical frequency division and microwave readout in the proposed architecture. With the advancement of heterogeneous electronic-photonic integration, it would pave the way for an ultralow-noise microwave source fully integrated in a hybrid photonic-electronic chip on a silicon substrate.
by Duo Li.
Ph. D.
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Eklund, Anders. "Microwave Frequency Stability and Spin Wave Mode Structure in Nano-Contact Spin Torque Oscillators." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-188546.

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The nano-contact spin torque oscillator (NC-STO) is an emerging device for highly tunable microwave frequency generation in the range from 0.1 GHz to above 65 GHz with an on-chip footprint on the scale of a few μm. The frequency is inherent to the magnetic material of the NC-STO and is excited by an electrical DC current by means of the spin torque transfer effect. Although the general operation is well understood, more detailed aspects such as a generally nonlinear frequency versus current relationship, mode-jumping and high device-to-device variability represent open questions. Further application-oriented questions are related to increasing the electrical output power through synchronization of multiple NC-STOs and integration with CMOS integrated circuits. This thesis consists of an experimental part and a simulation part. Experimentally, for the frequency stability it is found that the slow but strong 1/f-type frequency fluctuations are related to the degree of nonlinearity and the presence of perturbing, unexcited modes. It is also found that the NC-STO can exhibit up to three propagating spin wave oscillation modes with different frequencies and can randomly jump between them. These findings were made possible through the development of a specialized microwave time-domain measurement circuit. Another instrumental achievement was made with synchrotron X-rays, where we image dynamically the magnetic internals of an operating NC-STO device and reveal a spin wave mode structure with a complexity significantly higher than the one predicted by the present theory. In the simulations, we are able to reproduce the nonlinear current dependence by including spin wave-reflecting barriers in the nm-thick metallic, magnetic free layer. A physical model for the barriers is introduced in the form of metal grain boundaries with reduced magnetic exchange coupling. Using the experimentally measured average grain size of 30 nm, the spin wave mode structure resulting from the grain model is able to reproduce the experimentally found device nonlinearity and high device-to-device variability. In conclusion, the results point out microscopic material grains in the metallic free layer as the reason behind the nonlinear frequency versus current behavior and multiple propagating spin wave modes and thereby as a source of device-to-device variability and frequency instability.
Dagens snabba utveckling inom informationsteknik drivs på av ständigt växande informationsmängder och deras samhällsanvändning inom allt från resursoptimering till underhållning. Utvecklingen möjliggörs till stor del hårdvarumässigt av miniatyrisering och integrering av elektroniska komponenter samt trådlös kommunikation med allt större bandbredd och högre överföringshastighet. Det senare uppnås främst genom utnyttjande av högre radiofrekvenser i teknologiskt tidigare oåtkomliga delar av spektrumet. Frekvensutnyttjandet har det senaste årtiondet ökat markant i mikrovågsområdet med typiska frekvenser runt 2.4 GHz och 5.2-5.8 GHz. I den spinntroniska oscillatorn (STO:n) möjliggörs frekvensgenerering i det breda området från 0.1 GHz upp till över 65 GHz av en komponent med mikrometerstorlek som kan integreras direkt i CMOS-mikrochip. Till skillnad från i konventionella radiokretsar med oscillatorer konstruerade av integrerade transistorer och spolar, genereras mikrovågsfrekvensen direkt i STO:ns magnetiska material och omvandlas därefter till en elektrisk signal genom komponentens magnetoresistans. Dessa materialegenskaper möjliggör ett tillgängligt frekvensband med extrem bredd i en och samma STO, som därtill kan frekvensmoduleras direkt genom sin styrström och på så sätt förenklar konstruktionen av sändarsystem. STO:ns icke-linjära egenskaper kan potentiellt också användas för att i en och samma komponent blanda ned mottagna mikrovågssignaler och på så sätt förenkla konstruktionen även av mikrovågsmottagare. STO:ns signalegenskaper bestäms av det magnetiska materialets fysik i form av magnetiseringsdynamik driven av elektriskt genererade spinnströmmar. I denna avhandling studeras denna dynamik experimentellt med särskilt fokus på frekvensstabiliteten i den hittills mest stabila STO-typen; nanokontakts-STO:n. Genom mätningar i tidsdomän av STO:ns elektriska signaler runt 25 GHz har frekvensstabiliteten funnits hänga samman med den typ av icke-linjärt beteende som också funnits vara utmärkande för tillverkningsvariationen i komponenterna. Mikroskopiska undersökningar av materialet visar att en trolig källa till denna variation är den magnetiska metallens uppbyggnad i form av korn i storleksordningen 30 nm, och datorsimuleringar av en sådan materialstruktur har visats kunna reproducera de experimentella resultaten. Därtill har en metod utvecklats för att med röntgenstrålning direkt mäta de små, magnetiska mikrovågsrörelserna i materialet. Denna röntgenteknik möjliggör detaljerade experimentella studier av magnetiseringsdynamiken och kan användas för att verifiera och vidareutveckla den existerande teorin för mikrovågsspinntronik. Sammantaget förs STO-teknologin genom denna studie ett steg närmare sina tänkbara samhällsbreda tillämpningar inom snabb, trådlös kommunikation för massproducerade produkter med integrerad sensor- och datorfunktionalitet.

QC 20160620

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Chipengo, Ushemadzoro. "Novel Concepts for Slow Wave Structures used in High Power Backward Wave Oscillators." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1499346841806681.

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Francis, Smita. "Optimisation of doping profiles for mm-wave GaAs and GaN gunn diodes." Thesis, Cape Peninsula University of Technology, 2017. http://hdl.handle.net/20.500.11838/2568.

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Thesis (DTech (Electrical Engineering))--Cape Peninsula University of Technology, 2017.
Gunn diodes play a prominent role in the development of low-cost and reliable solid-state oscillators for diverse applications, such as in the military, security, automotive and consumer electronics industries. The primary focus of the research presented here is the optimisation of GaAs and GaN Gunn diodes for mm-wave operations, through rigorous Monte Carlo particle simulations. A novel, empirical technique to determine the upper operational frequency limit of devices based on the transferred electron mechanism is presented. This method exploits the hysteresis of the dynamic velocity-field curves of semiconductors to establish the upper frequency limit of the transferred electron mechanism in bulk material that supports this mechanism. The method can be applied to any bulk material exhibiting negative differential resistance. The simulations show that the upper frequency limits of the fundamental mode of operation for GaAs Gunn diodes are between 80 GHz and 100 GHz, and for GaN Gunn diodes between 250 GHz and 300 GHz, depending on the operating conditions. These results, based on the simulated bulk material characteristics, are confirmed by the simulated mm-wave performance of the GaAs and GaN Gunn devices. GaAs diodes are shown to exhibit a fundamental frequency limit of 90 GHz, but with harmonic power available up to 186_GHz. Simulated GaN diodes are capable of generating appreciable output power at operational frequencies up to 250 GHz in the fundamental mode, with harmonic output power available up to 525 GHz. The research furthermore establishes optimised doping profiles for two-domain GaAs Gunn diodes and single- and two-domain GaN Gunn diodes. The relevant design parameters that have been optimised, are the dimensions and doping profile of the transit regions, the width of the doping notches and buffer region (for two-domain devices), and the bias voltage. In the case of GaAs diodes, hot electron injection has also been implemented to improve the efficiency and output power of the devices. Multi-domain operation has been explored for both GaAs and GaN devices and found to be an effective way of increasing the output power. However, it is the opinion of the author that a maximum number of two domains is feasible for both GaAs and GaN diodes due to the significant increase in thermal heating associated with an increase in the number of transit regions. It has also been found that increasing the doping concentration of the transit region exponentially over the last 25% towards the anode by a factor of 1.5 above the nominal doping level enhances the output power of the diodes.
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Alaslami, Nauwaf. "Design Procedures for Series and Parallel Feedback Microwave DROs." Thesis, Stellenbosch : University of Stellenbosch, 2007. http://hdl.handle.net/10019.1/2235.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2007.
Clear procedures for designing dielectric resonator oscillators (DROs) are presented in this thesis, including built examples to validate these design procedures. Both series and parallel feedback DROs are discussed and the procedures for building them are presented. Two examples at different frequencies for each type of DRO are constructed and tested with the results shown. The first is at a frequency of approximately 6.22 GHz and the second for the higher frequency of 11.2 GHz. The DROs for the desired frequencies are designed using the Microwave Office (MWO) software by AWR with the design based on the small-signal model (scattering parameters). Oscillators are produced using the negative resistance method. The circuit achieves low noise by using a dielectric resonator with a high Q factor. Both the series and parallel feedback DRO circuits can be mechanically tuned around the resonant frequency to maximize performance.
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SANTOS, BRUNO PALHARES DOS. "PHASE NOISE OPTIMIZATION OF MICROWAVE OSCILLATORS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2005. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=7590@1.

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COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR
Nesta dissertação foram projetados e desenvolvidos osciladores apresentando ruído de fase otimizado. Em virtude das limitações dos equipamentos analisadores de espectro na precisa medição do ruído de fase dos osciladores desenvolvidos nos laboratórios do CETUC, foi implementada a técnica de medição Método do Detector de Fase. Esta técnica consiste no desenvolvimento de um segundo oscilador com as mesmas características do existente, e com auxílio de misturadores, realizar o batimento dos mesmos para freqüências próximas a DC, onde nesta região a medição do ruído de fase torna-se viável. Entretanto, em aplicações dedicadas, verificou-se que o batimento entre dois osciladores operando em torno de 10 GHz produz uma freqüência intermediária instável, variando de 10 kHz à 50 kHz. Para evitar a realização de uma medição extremamente instável, utilizou-se o método de sincronização de freqüências (Injection Locking) entre os osciladores. Foi também destacada a influência do ruído de cintilação (Flicker Noise) na medida final do ruído de fase. A melhor medida aferida foi em torno de -100 dBc/Hz @ 3,25 kHz. Foi verificado através de diversas simulações que a freqüência de cintilação int c f , situada em 10 MHz, apresenta grande influência sobre as medições do ruído de fase realizadas à 3,25 kHz da portadora, degradando-o em cerca de 30dB.
In this dissertation, oscillators presenting optimized phase noise had been projected and develloped. Because of the limitation of the specter analyzer devices in the accurate measurements of the oscillators phase noise developed in the CETUC laboratories, it was implemented the measurement technique called Phase Detector Method. This technique consists on the development of a second oscillator with the same characteristics of the already existent one and, with aid of mixers, multiplies these signals together and provides the difference of the two signals next to DC, where, in this region, the measurement of the phase noise becomes viable. However, in dedicated applications, it was verified that the beating between two oscillators operating around 10GHz produces instable intermediate frequency, varying between 10kHz to 50kHz. To prevent the accomplishment of an extremely unstable measurement, the method of synchronization of frequency (Injection Locking) between the oscillators was used. Also the influence of the Flicker Noise in the final measure of the phase noise was detached. The best measure was around -100dBc/Hz@3,25kHz. It was verified through lots of simulations that the flicker corner frequency int c f , situated in 10MHz, presents great influence on the measures of the phase noise carried through to the 3,25kHz of the carrier, degrading it in about 30dB.
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Siripon, Nipapon. "Microwave balanced oscillators and frequency doublers." Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/771938/.

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The research presented in this thesis is on the application of the injection-locked oscillator technique to microwave balanced oscillators. The balanced oscillator design is primarily analysed using the extended resonance technique. A transmission line is connected between the two active devices, so that the active device resonate each other. The electrical length of the transmission line is also analysed for the balanced oscillation condition. The balanced oscillator can be viewed with the negative resistance model and the feedback model. The former model is characterised at a circuit plane where the feedback network is cut. By using both the negative-resistance oscillator model and the feedback model, the locking range of the oscillator is analysed by extending Kurokawa's theory. This analysis demonstrates the locking range of the injection phenomenon, where the injection frequency is either close to the free-running frequency, close to (lin) x freerunning frequency or close to n x the free-running frequency. It also reveals the effect of different injection power levels on the locking range. Injection-locked balanced oscillators for subharmonic and fundamental modes are constructed. When the balanced oscillator is in the locking state, it is clearly shown that the output signal is better stabilised and the phase noise is attenuated. The experimental results agree with the analysis. Furthermore, the spurious signal suppression in a cascaded oscillator is investigated. The other focus of this research is on the design of frequency doublers. A balanced douber is designed and integrated with a balanced injection-locked oscillator. The experimental result shows that the output signal is clean and stabilised. The other important frequency doubler design technique studied is the use of the feedforward technique to significantly eliminate the fundamental frequency component. The design and the experiment show that the fundamental component can be suppressed to better than 50 dBc.
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Victor, Alan M. "Microwave Power Oscillator utilizing Thin-Film Varactor." NCSU, 2010. http://www.lib.ncsu.edu/theses/available/etd-03232010-100654/.

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Synthesis of Microwave Power Oscillators utilizing Thin-film Varactors. The application of the power oscillator is in high efficiency microwave sources for the direct carrier launch of microwave signals. The resulting work directing towards the efficient implementation for microwave transmitters.
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Books on the topic "Oscillators, Electric; Oscillators, Microwave"

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Rubiola, Enrico. Phase noise and frequency stability in oscillators. New York: Cambridge University Press, 2008.

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Westra, Jan R. Oscillators and Oscillator Systems: Classification, Analysis and Synthesis. Boston, MA: Springer US, 1999.

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Grebennikov, Andrei. RF and microwave transistor oscillator design. Chichester, UK: John Wiley & Sons, Ltd, 2007.

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Oscillator design and computer simulation. 2nd ed. New York: McGraw-Hill, 1997.

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Rhea, Randall W. Oscillator design and computer simulation. 2nd ed. Atlanta, Ga: Noble Pub. Corp., 2000.

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Oscillator design and computer simulation. Englewood Cliffs, N.J: Prentice Hall, 1990.

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Abrie, Pieter L. D. Design of RF and microwave amplifers and oscillators. 2nd ed. Boston: Artech House, 2009.

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Abrie, Pieter L. D. Design of RF and microwave amplifers and oscillators. Boston: Artech House, 2000.

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Abrie, Pieter L. D. Design of RF and microwave amplifers and oscillators. Boston: Artech House, 1999.

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Design of RF and microwave amplifers and oscillators. Boston: Artech House, 2009.

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Book chapters on the topic "Oscillators, Electric; Oscillators, Microwave"

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van de Roer, Theo G. "Oscillators." In Microwave Electronic Devices, 287–312. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4_10.

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Gautier, Jean-Luc. "Oscillators." In Design of Microwave Active Devices, 217–92. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118814888.ch4.

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Kärtner, Franz X. "Noise Analysis of Oscillators." In Microwave Applications, 114–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83157-7_12.

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Pennock, S. R., and P. R. Shepherd. "Amplifiers and Oscillators." In Microwave Engineering with Wireless Applications, 251–71. London: Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-14761-8_11.

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Chapline, George, and Matt Otten. "Bayesian Searches and Quantum Oscillators." In Microwave Cavities and Detectors for Axion Research, 155–62. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-43761-9_18.

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Chaturvedi, Prakash Kumar. "Microwave Tubes as Microwave Source (Oscillators) and Amplifiers." In Microwave, Radar & RF Engineering, 151–92. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7965-8_5.

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Daryoush, Afshin S. "APPENDIX F OPTO-ELECTRONICALLY STABILIZED RF OSCILLATORS." In Microwave and Wireless Synthesizers, 701–59. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2021. http://dx.doi.org/10.1002/9781119666127.app6.

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Chaturvedi, Prakash Kumar. "Microwave Semiconductors Devices: Oscillators, Amplifiers, and Circuit." In Microwave, Radar & RF Engineering, 193–270. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7965-8_6.

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Artal, E., J. P. Pascual, and J. Portilla. "Oscillators, Frequency Synthesisers and PLL Techniques." In Microwave Devices, Circuits and Subsystems for Communications Engineering, 461–518. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470012757.ch7.

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de Loubens, Grégoire, and Matthieu Bailleul. "Microwave Nanomagnetism: Spin Torque Oscillators and Magnonics." In Nanomagnetism: Applications and Perspectives, 269–96. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527698509.ch12.

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Conference papers on the topic "Oscillators, Electric; Oscillators, Microwave"

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Averin, V. V., and A. F. Yuhin. "IMPATT-based broadband diode oscillators featuring electric mm-wave frequency tuning." In 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology' Conference Proceedings. IEEE, 2003. http://dx.doi.org/10.1109/crmico.2003.158780.

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Ryskin, N. M., and V. N. Titov. "Modelling of Nonstationary Dynamics of Resonant Microwave Oscillators." In 2006 International Conference on Actual Problems of Electron Devices Engineering. IEEE, 2006. http://dx.doi.org/10.1109/apede.2006.307418.

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Madziar, K., A. Szymańska, and B. Galwas. "The use of photonic techniques in tunable microwave oscillators." In Electron Technology Conference 2013, edited by Pawel Szczepanski, Ryszard Kisiel, and Ryszard S. Romaniuk. SPIE, 2013. http://dx.doi.org/10.1117/12.2031265.

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Daryoush, A. S., H. w. Li, G. Bouwmans, D. Decoster, J. Chazelas, and F. Deborgies. "Performance Evaluation of Opto-electronic Oscillators Employing Photonic Crystal Fibers." In 2006 European Microwave Conference. IEEE, 2006. http://dx.doi.org/10.1109/eumc.2006.281150.

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Talatchian, P., M. Romera, S. Tsunegi, F. Abreu Araujo, V. Cros, P. Bortolotti, J. Trastoy, et al. "Microwave Neural Processing and Broadcasting with Spintronic Nano-Oscillators." In 2018 IEEE International Electron Devices Meeting (IEDM). IEEE, 2018. http://dx.doi.org/10.1109/iedm.2018.8614585.

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Nguimdo, Romain Modeste, Yanne Kouomou Chembo, Pere Colet, and Laurent Larger. "Phase noise performance of double-loop optoelectronic microwave oscillators." In 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC. IEEE, 2013. http://dx.doi.org/10.1109/cleoe-iqec.2013.6801235.

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Ryskin, N. M., and V. N. Titov. "Nonstationary Simulation of Electron Beam Interaction with Coupled Resonant Microwave Oscillators." In 2007 IEEE Pulsed Power Plasma Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4346031.

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Korovin, Sergei D., Sergei D. Polevin, Igor V. Pegel, Vladislav V. Rostov, A. M. Roytman, V. L. Bratman, G. G. Denisov, and A. V. Smorgonsky. "High-power microwave Cherenkov oscillators with high-current relativistic electron beams." In XVI International Symposium on Discharges and Electrical Insulation in Vacuum, edited by Gennady A. Mesyats. SPIE, 1994. http://dx.doi.org/10.1117/12.174571.

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Parker, Stephen, Paul Stanwix, Michael Tobar, Moritz Nagel, John Hartnett, Eugene Ivanov, and Achim Peters. "Rotating microwave cryogenic sapphire oscillators for tests of Lorentz Invariance." In 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim. IEEE, 2011. http://dx.doi.org/10.1109/iqec-cleo.2011.6193887.

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Zhang, L., V. Madhavan, R. P. Patel, A. K. Poddar, U. L. Rohde, and A. S. Daryoush. "Ultra low FM noise in passively temperature compensated microwave opto-electronic oscillators." In 2013 IEEE MTT-S International Microwave and RF Conference. IEEE, 2013. http://dx.doi.org/10.1109/imarc.2013.6777722.

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Reports on the topic "Oscillators, Electric; Oscillators, Microwave"

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Cooper, Jr, and James A. Investigation of a New Concept in Semiconductor Microwave Oscillators. Fort Belvoir, VA: Defense Technical Information Center, May 1988. http://dx.doi.org/10.21236/ada198039.

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Cooper, James A., and Jr. Investigation of a New Concept in Semiconductor Microwave Oscillators. Fort Belvoir, VA: Defense Technical Information Center, November 1985. http://dx.doi.org/10.21236/ada170831.

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Granatstein, V. L. Plasma Microwave Electronics: Studies of High Power Plasma-Loaded Backward Wave Oscillators. Fort Belvoir, VA: Defense Technical Information Center, March 1995. http://dx.doi.org/10.21236/ada297853.

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Cooper, James A., and Jr. Investigation of a New Concept in Semiconductor Microwave Oscillators: The Contiguous Domain Oscillator. Fort Belvoir, VA: Defense Technical Information Center, February 1993. http://dx.doi.org/10.21236/ada262352.

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