Relevant bibliographies by topics / Organic Field Effect TransistorsCompared

Academic literature on the topic 'Organic Field Effect TransistorsCompared'

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Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Organic Field Effect TransistorsCompared"

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Boudinov, Henry, and Gabriel Volkweis Leite. "Organic Field Effect Transistors." Journal of Integrated Circuits and Systems 17, no. 2 (September 17, 2022): 1–12. http://dx.doi.org/10.29292/jics.v17i2.615.

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This article begins with a brief overview of the structure, physical characteristics, and peculiarities of organic field effect transistors. The main differences from the silicon MOSFET are emphasized. The results of poly 3-hexylthiophene and cross-linked polyvinyl alcohol top gate-bottom contact transistors with different channel lengths fabricated by standard photolithography and plasma etching are described. Transistors showed good charge mobility, high ION/IOFF and excellent environmental stability. The Shockley model and the Transmission Line Method (TLM) were applied to characterize the transistors. Mobility was extracted by both methods and differences were discussed. The shorter the channel length and the higher the conductivity of the semiconductor, the greater the impact of contact resistance. In these cases, the use of TLM for parameters extraction becomes essential. The transistors were submitted to extended current-voltage measurements and drain current degradation was observed. Drain current as a function of the integral charge passing through the channel was investigated. The strong decrease in current was found to be related to reduced mobility of charge carriers. Reasons for this behavior are suggested.
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Horowitz, Gilles. "Organic Field-Effect Transistors." Advanced Materials 10, no. 5 (March 1998): 365–77. http://dx.doi.org/10.1002/(sici)1521-4095(199803)10:5<365::aid-adma365>3.0.co;2-u.

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Yamashita, Yoshiro. "Organic semiconductors for organic field-effect transistors." Science and Technology of Advanced Materials 10, no. 2 (April 2009): 024313. http://dx.doi.org/10.1088/1468-6996/10/2/024313.

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Wang, Haibo, and Donghang Yan. "Organic heterostructures in organic field-effect transistors." NPG Asia Materials 2, no. 2 (April 2010): 69–78. http://dx.doi.org/10.1038/asiamat.2010.44.

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Dodabalapur, A., H. E. Katz, L. Torsi, and R. C. Haddon. "Organic field‐effect bipolar transistors." Applied Physics Letters 68, no. 8 (February 19, 1996): 1108–10. http://dx.doi.org/10.1063/1.115728.

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Dodabalapur, A., H. E. Katz, L. Torsi, and R. C. Haddon. "Organic Heterostructure Field-Effect Transistors." Science 269, no. 5230 (September 15, 1995): 1560–62. http://dx.doi.org/10.1126/science.269.5230.1560.

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Liu, Jie, Lang Jiang, Wenping Hu, Yunqi Liu, and Daoben Zhu. "Monolayer organic field-effect transistors." Science China Chemistry 62, no. 3 (January 30, 2019): 313–30. http://dx.doi.org/10.1007/s11426-018-9411-5.

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Liu, Jinyu, Zhengsheng Qin, Haikuo Gao, Huanli Dong, Jia Zhu, and Wenping Hu. "Vertical Organic Field‐Effect Transistors." Advanced Functional Materials 29, no. 17 (February 28, 2019): 1808453. http://dx.doi.org/10.1002/adfm.201808453.

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Lüssem, Björn, Hans Kleemann, Daniel Kasemann, Fabian Ventsch, and Karl Leo. "Organic Junction Field-Effect Transistor." Advanced Functional Materials 24, no. 7 (October 24, 2013): 1011–16. http://dx.doi.org/10.1002/adfm.201301417.

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Guo, Yunlong, Gui Yu, and Yunqi Liu. "Functional Organic Field-Effect Transistors." Advanced Materials 22, no. 40 (September 17, 2010): 4427–47. http://dx.doi.org/10.1002/adma.201000740.

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Dissertations / Theses on the topic "Organic Field Effect TransistorsCompared"

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Chua, L. L. "Organic field-effect transistors." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597679.

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In this thesis, we demonstrated that divinyltetramethyldisiloxane-benzocyclobutene (BCB), which has previously been used as an isolation dielectric in III-IV semiconductor devices, in fact makes an excellent gate dielectric material in OFETs after suitable purification. Robust ultra-thin films with high glass transition temperature and high dielectric breakdown strength can be obtained by simple spin-coating followed by rapid-thermal-anneal to above 250°C. With this material, we were able to demonstrate remarkable performance in polymer OFETs and explore several aspects of their physics. In Chapter 2, we introduce the use of BCB as a good candidate for solution-processable organic gate dielectric. Pinhole-free ultra-thin gate dielectric film as thin as 50nm can be made from this material. With this gate dielectric, robust continual cyclic operation of poly[(9,9-dioctylfluorene-2,7-diyl)-alt-(phenylene-(N-(p-2-butylphenyl-imino-phenylene)) (TFB) FETs at 120°C was achieved. Previously, the thinnest practical solution-processable gate dielectric thickness was >300 nm-thick. In Chapter 3, we demonstrated self-organised polymer semiconductor/dielectric FETs fabricated using a spontaneous and an unusual vertical phase separation of the TFB polymer semiconductor and the BCB dielectric materials during film spinning. This method enables the formation of semiconductor and dielectric layers at the same time without exposing their interface to air. Using these devices, we established that a critical root-mean-square interface roughness of 0.7 nm (measured on the 100 nm length scale) could be tolerated without loss of mobility of the devices, probably related to the hopping of the carries at the interface. In Chapter 4, we demonstrated using this non-trapping BCB dielectric the generality of n-type field-effect conduction across a wide range of polymer organic semiconductors. We showed that this was previously suppressed by interface trapping of the accumulated electrons by the –OH group in the gate dielectrics that have often been used. We found electron mobilities very similar to, if not larger than, hole mobilities across a range of organic semiconductors. Therefore, many (though not all) π-conjugated materials are by their nature ambipolar and can support both electron and hole conduction nearly equally well. Their previous classification into “n-type” and “p-type” materials is thus somewhat arbitrary. Finally, in Chapter 5, we used BCB as the top gate dielectric and fabricated fully functional double-gate OFETs over a bottom gate dielectric. We showed that such devices exhibit electrostatic coupling of the two gates occurs to produce an “AND” logic gate.
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Günther, Alrun Aline. "Vertical Organic Field-Effect Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-207731.

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Diese Arbeit stellt eine eingehende Studie des sogenannten Vertikalen Organischen Feld-Effekt-Transistors (VOFET) dar, einer neuen Transistor-Geometrie, welche dem stetig wachsenden Bereich der organischen Elektronik entspringt. Dieses neuartige Bauteil hat bereits bewiesen, dass es in der Lage ist, eine der fundamentalen Einschränkungen herkömmlicher organischer Feld-Effekt-Transistoren (OFETs) zu überwinden: Die für Schaltfrequenz und An-Strom wichtige Kanallänge des Transistors kann im VOFET stark reduziert werden, ohne dass teure und komplexe Strukturierungsmethoden genutzt werden müssen. Das genaue Funktionsprinzip des VOFET ist bisher jedoch weitgehend unerforscht. Durch den Vergleich von experimentellen Daten mit Simulationsdaten des erwarteten Bauteil-Verhaltens wird hier ein erstes, grundlegendes Verständnis des VOFETs erarbeitet. Die so gewonnenen Erkenntnisse werden im Folgenden genutzt, um bestimmte Parameter des VOFETs kontrolliert zu manipulieren. So wird beispielsweise gezeigt, dass die Morphologie des organischen Halbleiters, und damit seine Abscheidungsparameter, sowohl für die VOFET-Herstellung als auch für den Ladungsträgertransport im fertigen Bauteil eine wichtige Rolle spielen. Weiterhin wird gezeigt, dass der VOFET, genau wie der konventionelle OFET, durch das Einbringen von Kontaktdotierung deutlich verbessert werden kann. Mit Hilfe dieser Ergebnisse kann gezeigt werden, dass das Funktionsprinzip des VOFETs mit dem eines konventionellen OFETs nahezu identisch ist, wenn man von geringen Abweichungen aufgrund der unterschiedlichen Geometrien absieht. Basierend auf dieser Erkenntnis wird schließlich ein VOFET präsentiert, welcher im Inversionsmodus betrieben werden kann und so die Lücke zur konventionellen MOSFET-Technologie schließt. Dieser Inversions-VOFET stellt folglich einen vielversprechenden Ansatz für leistungsfähige organische Transistoren dar, welche als Grundbausteine für komplexe Elektronikanwendungen auf flexiblen Substraten genutzt werden können
This work represents a comprehensive study of the so-called vertical organic field-effect transistor (VOFET), a novel transistor geometry originating from the fast-growing field of organic electronics. This device has already demonstrated its potential to overcome one of the fundamental limitations met in conventional organic transistor architectures (OFETs): In the VOFET, it is possible to reduce the channel length and thus increase On-state current and switching frequency without using expensive and complex structuring methods. Yet the VOFET's operational principles are presently not understood in full detail. By simulating the expected device behaviour and correlating it with experimental findings, a basic understanding of the charge transport in VOFETs is established and this knowledge is subsequently applied in order to manipulate certain parameters and materials in the VOFET. In particular, it is found that the morphology, and thus the deposition parameters, of the organic semiconductor play an important role, both for a successful VOFET fabrication and for the charge transport in the finished device. Furthermore, it is shown that VOFETs, just like their conventional counterparts, are greatly improved by the application of contact doping. This result, in turn, is used to demonstrate that the VOFET essentially works in almost exactly the same way as a conventional OFET, with only minor changes due to the altered contact arrangement. Working from this realisation, a vertical organic transistor is developed which operates in the inversion regime, thus closing the gap to conventional MOSFET technology and providing a truly promising candidate for high-performance organic transistors as the building blocks for advanced, flexible electronics applications
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Mohammad, Ahmed Fareed. "Polyelectrolyte based organic field effect transistors." Thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-96237.

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In this thesis work, the fabrication of dual gate organic field-effect transistors (DGOFETs) using polyanionic proton conductor named polyvinylphosphonic acid and acrylic acid P(VPA-AA), SiO 2 as gate insulating materials and poly(3-hexylthiophene) (P3HT) as organic semiconductor have been studied. Upon operation, the top insulating layer forms large electric double layer capacitors (EDLCs)at the Ti/P(VPA-AA) and P(VPAAA)/ P3HT interfaces. This new type of robust transistor, called as EDLC-OFET, displays fast response (<0.3 ms), a reasonably high field effect mobility (0.0030 cm² V -1 s-1), a low ION/IOFF ratio (150), and operates at low voltage (<1 V). Results concerning the influence of bottom gate on the DG-OFET are presented and discussed. The results presented are important for low-cost printed polymer electronics. Also, various conducting polymer gate electrode in addition to laminated OFET to form EDLC-OFET have been tested. Conducting polymers include PEDOT:PSS and polyaniline (PANI).
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Ritjareonwattu, Supachai. "Ion sensitive organic field effect transistors." Thesis, Durham University, 2011. http://etheses.dur.ac.uk/3292/.

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Ion sensitive organic field-effect transistors (ISOFETs) with a metal–oxide–semiconductor field-effect transistor (MOSFET) architecture have been fabricated by using poly(3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) as the semiconductor and dielectric layers, respectively. To avoid any pin-holes in the dielectric layer, the ISOFET was coated by two separate PMMA layers. An Ag/AgCl double-junction reference electrode was used as the gate. The results show that the uncoated ISOFET exhibited transistor behaviour in aqueous solutions. However, these devices possessed a small sensitivity of about 0.5 nA dec-1 to H+, K+ and Na+ ions. Langmuir-Blodgett membranes were then used to improve the ISOFET response to the target ions in solution. By coating the gate dielectric (PMMA) with an LB membrane of pure arachidic acid (AA), the ISOFETs showed a significantly higher sensitivity to H+ ions of about 3.5 nA pH-1, but no improvement in the pK response (< 0.5 nA dec-1). The compact ionised layers of carboxylic acid head groups were thought to lead to the improvement in the pH sensitivity; however, the layers of long hydrocarbon chains prevented large monovalent ions, such as K+ and Na+, from interacting with the ionised carboxylic acid head groups. ISOFETs coated with an arachidic acid/valinomycin (AA/val) mixture did not show any selectivity to K+ ions, but exhibited enhanced sensitivities to both K+ and Na+ ions. Instead of trapping K+ ions, the valinomycin molecules in the AA membrane were thought to disrupt the membrane architecture and provide ion-leakage channels. Pure valinomycin-coated ISOFETs also revealed enhancements in both sensitivity and selectivity to K+ ions over Na+. This may be due to the fact that the cavity in the valinomycin molecules can accommodate a K+ ion but not a Na+ ion. To study facilitated K+ transport across the membrane, LB films of AA/val mixture and pure valinomycin were coated on porous supports. The responses of both uncoated and coated membranes were similar. After deposition, collapse of the LB film into the pores may provide leakage channels. This probably led to the observed gradual decrease of the potentials across the membranes.
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Liu, Shiyi. "Understanding Doped Organic Field-Effect Transistors." Kent State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301.

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Wolanin, Piotr Jacek. "Functional organic nanomaterials for field-effect transistors." Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.723471.

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Takshi, Arash. "Organic metal-semiconductor field-effect transistor (OMESFET)." Thesis, University of British Columbia, 2007. http://hdl.handle.net/2429/31531.

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Organic electronics offers the possibility of producing ultra-low-cost and large-area electronics using printing methods. Two challenges limiting the utility of printed electronic circuits are the high operating voltage and the relatively poor performance of printed transistors. It is shown that voltages can be reduced by replacing the capacitive gate used in Organic Field-Effect Transistors (OFETs) with a Schottky contact, creating a thin-film Organic Metal-Semiconductor Field-Effect Transistor (OMESFET). This geometry solves the voltage issue, and promises to be useful in situations where low voltage operation is important, but good performance is not essential. In cases where high voltage is acceptable or required, it is shown that OFET performance can be greatly improved by employing a Schottky contact as a second gate. The relatively thick insulating layer between the gate and the semiconductor in OFETs makes it necessary to employ a large change of gate voltage (~40 V) to control the drain current. In order to reduce the voltage to less than 5 V a very thin (<10 nm) insulating layer and/or high-k dielectric materials can be used, but these solutions are not compatible with current printing technology. Simulations and implementations of OMESFET devices demonstrate low voltage operation (<5 V) and improved sub-threshold swing compared to the OFET. However, these benefits are achieved at the expense of mobility. In order to achieve good performance in an OFET, including threshold voltage, current ratio and output resistance, the semiconductor thickness has to be less than 50 nm, whereas the thickness of a printed semiconductor is typically larger than 200 nm. The addition of a top Schottky contact on the OFET creates a depletion region thereby reducing the effective thickness of the semiconductor, and resulting in enhanced transistor performance. Simulations and experimental results show improvements in the threshold voltage, the current ratio, and the output resistance of a dual gate transistor, when compared to those in an OFET of the same thickness. The transistors introduced in this work demonstrate means of improving the performance of thick-film OFETs and of achieving substantially lower operation voltage in organic transistors.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
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Cheng, X. "Organic field-effect transistors via inkjet printing." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597572.

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This thesis is concerned with the fabrication process, charge injection, dielectric preparation and downscaling of organic field-effect transistors via inkjet printing. To provide a general guideline of fabricating inkjet-printed short channel transistors, this thesis starts with an improved self-aligned printing (SAP) technique implemented with gold nanoparticle inks which defines a nanometer scale channel between source and drain electrodes. Electron and hole injection and transport in the channel is studied using ambipolar semiconductor F8BT. Contact resistance effects are found to be significantly more pronounced in these short channel devices and the current is limited by insufficient charge injection. Self-assembled monolayers (SAMs) are effectively employed to reduce the contact resistance in the SAP. Next, the systematic control of electron and hole charge injection in top-gate F8BT ambipolar transistor via SAM modification is investigated. Gold electrodes are modified with PFDT and 1DT to reduce contact resistance and improve charge injection. Furthermore, a crosslinked fluoropolymer Cytop (C-Cytop) is adopted as an ultrathin gate dielectric, which is necessary for proper gate control of the accumulation layer in short channel devices. The C-Cytop can be spin-coated in air with uniform thin films, low gate leakage and high dielectric breakdown strength. The yield and stability of C-Cytop devices are remarkable compared to other non-fluorinated polymer dielectrics and less dependent on the underlying semiconductor roughness. In particular high performance in-type transistors are demonstrated using C-Cytop and small-molecule ActivInk N1400 as the semiconductor. Finally, downscaled inkjet-printed nano-channel n-type transistors are demonstrated by printing silver nanoparticle inks with N1400 and C-Cytop in the SAP structure. The printed silver nanoparticles serves as source contact combining with thin C-Cytop layer as gate dielectric.
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Arthur, Joshua N. "Hygroscopic insulator organic field effect transistor sensors." Thesis, Queensland University of Technology, 2022. https://eprints.qut.edu.au/232689/1/Joshua_Arthur_Thesis.pdf.

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Hygroscopic insulator field effect transistors (HIFETs) are organic transistors with promising characteristics for biosensing applications. However, their fundamental sensing mechanisms are not yet fully understood. This thesis explores HIFET sensors through detailed electrical and optical characterisation, providing vital insights into the distinct mechanisms by which HIFETs detect biologically relevant chemicals. Hydrogen peroxide, a by-product of enzymatic reactions, oxidises the organic semiconductor, modulating the output current. Ionic solutions, such as KCl, NaCl and HCl, modulate the current by changing double layer capacitance. These insights are foundational for the continued development of HIFETs as effective multipurpose biosensing platforms.
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Chiu, Yu-Jui. "Wet Organic Field Effect Transistor as DNA sensor." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11761.

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Label-free detection of DNA has been successfully demonstrated on field effect transistor (FET) based devices. Since conducting organic materials was discovered and have attracted more and more research efforts by their profound advantages, this work will focus on utilizing an organic field effect transistor (OFET) as DNA sensor.

An OFET constructed with a transporting fluidic channel, WetOFET, forms a fluid-polymer (active layer) interface where the probe DNA can be introduced. DNA hybridization and non-hybridization after injecting target DNA and non-target DNA were monitored by transistor characteristics. The Hysteresis area of transfer curve increased after DNA hybridization which may be caused by the increasing electrostatic screening induced by the increasing negative charge from target DNA. The different morphology of coating surface could also influence the OFET response.

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Books on the topic "Organic Field Effect TransistorsCompared"

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Kymissis, Ioannis. Organic Field Effect Transistors. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-92134-1.

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Robert, McIntire, and Donnell Pierre, eds. Integrated circuits, photodiodes, and organic field effect transistors. Hauppauge, NY: Nova Science Publishers, 2009.

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service), SpringerLink (Online, ed. Organic Field Effect Transistors: Theory, Fabrication and Characterization. Boston, MA: Springer Science+Business Media, LLC, 2009.

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library, Wiley online, ed. Organic electronics: Structural and electronic properties of OFETs. Weinheim: Wiley-VCH, 2009.

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Bao, Zhenan. Organic field-effect transistors VII and organic semiconductors in sensors and bioelectronics: 10-12 August 2008, San Diego, California, USA. Edited by SPIE (Society) and Air Products and Chemicals, inc. Bellingham, Wash: SPIE, 2008.

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Calif.) Organic Field-Effect Transistors (Conference) (12th 2013 San Diego. Organic Field-Effect Transistors XII, and Organic Semiconductors in Sensors and Bioelectronics VI: 26-29 August 2013, San Diego, California, United States. Edited by Bao Zhenan, McCulloch Iain 1964-, Shinar Ruth, Kymissis Ioannis, SPIE (Society), Aldrich Materials Science (United States), and Organic Semiconductors in Sensors and Bioelecronics (6th : 2013 : San Diego, Calif.). Bellingham, Washington, USA: SPIE, 2013.

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Bao, Zhenan. Organic field-effect transistors VI: 26-28 August 2007, San Diego, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2007.

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Bao, Zhenan. Organic field-effect transistors VI: 26-28 August 2007, San Diego, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2007.

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(Society), SPIE, and Merck Chemicals Ltd, eds. Organic field-effect transistors X: 22-23 August 2011, San Diego, California, United States. Bellingham, Wash: SPIE, 2011.

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Bao, Zhenan, and Iain McCulloch. Organic field-effect transistors VIII: 3-5 August 2009, San Diego, California, United States. Edited by SPIE (Society), Aldrich Chemical Company, Corning Incorporated, and Solvay S. A. (Firm). Bellingham, Wash: SPIE, 2009.

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Book chapters on the topic "Organic Field Effect TransistorsCompared"

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Wang, Chengliang, Lang Jiang, and Wenping Hu. "Organic/Polymeric Field-Effect Transistors." In Organic Optoelectronics, 95–170. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch3.

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Zhang, Guangye, Chen Xie, Peng You, and Shunpu Li. "Organic Field-Effect Transistors." In Introduction to Organic Electronic Devices, 107–29. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6091-8_4.

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Horowitz, Gilles. "Interfaces in Organic Field-Effect Transistors." In Organic Electronics, 113–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/12_2009_7.

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Takenobu, Taishi, and Yoshihiro Iwasa. "Single-Crystal Organic Field-Effect Transistors." In Organic Electronics, 301–18. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527650965.ch12.

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Zhen, Yonggang, and Wenping Hu. "Organic Nano Field-Effect Transistor." In Soft Matter Nanotechnology, 309–56. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527682157.ch12.

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Scheinert, Susanne, Gernot Paasch, Ingo Hörselmann, and Andrei Herasimovich. "Low-Cost Submicrometer Organic Field-Effect Transistors." In Organic Electronics, 155–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/12_2009_8.

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Melzer, Christian, and Heinz von Seggern. "Organic Field-Effect Transistors for CMOS Devices." In Organic Electronics, 189–212. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/12_2009_9.

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Meng, Qing, Huanli Dong, and Wenping Hu. "Organic/Polymeric Semiconductors for Field-Effect Transistors." In Organic Optoelectronics, 43–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch2.

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Casalini, Stefano, Tobias Cramer, Francesca Leonardi, Massimiliano Cavallini, and Fabio Biscarini. "Low-Dimensionality Effects in Organic Field Effect Transistors." In Organic Nanomaterials, 397–419. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118354377.ch18.

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de Boer, R. W. I., M. E. Gershenson, A. F. Morpurgo, and V. Podzorov. "Organic Single-Crystal Field-Effect Transistors." In Physics of Organic Semiconductors, 393–432. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527606637.ch14.

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Conference papers on the topic "Organic Field Effect TransistorsCompared"

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Bartsch, Carrie M., Guru Subramanyam, James G. Grote, Kristi M. Singh, Rajesh R. Naik, Birendra Singh, and Niyazi S. Sariciftci. "Bio-organic field effect transistors." In NanoScience + Engineering, edited by Emily M. Heckman, Thokchom B. Singh, and Junichi Yoshida. SPIE, 2007. http://dx.doi.org/10.1117/12.732033.

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Zhen, Yonggang, Ping He, Yuanping Yi, and Wenping Hu. "Tuning the crystal polymorphs of organic semiconductor towards high performance organic transistors (Conference Presentation)." In Organic Field-Effect Transistors XV, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2016. http://dx.doi.org/10.1117/12.2239200.

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Debucquoy, Maarten, Stijn Verlaak, Soeren Stoedel, Stijn De Vusser, Jan Genoe, and Paul Heremans. "Pentacene organic field-effect phototransistor with memory effect." In Photonics Europe, edited by Paul L. Heremans, Michele Muccini, and Eric A. Meulenkamp. SPIE, 2006. http://dx.doi.org/10.1117/12.667246.

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Weis, M. "Organic semiconductor based field-effect transistors." In 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998635.

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Chou, Wei-Yang, Yu-Shen Mai, Chia-Wei Kuo, Horng-Long Cheng, Yi-Ren Chen, Shih-Ting Lin, Feng-Yu Yang, Dun-Yin Shu, and Chi-Chang Liao. "High performance organic field-effect transistors." In SPIE Optics + Photonics, edited by Zhenan Bao and David J. Gundlach. SPIE, 2006. http://dx.doi.org/10.1117/12.679025.

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Irimia-Vladu, Mihai, Pavel A. Troshin, Günther Schwabegger, Marius Bodea, Reinhard Schwödiauer, Jeffrey W. Fergus, Vladimir Razumov, Siegfried Bauer, and Niyazi Serdar Sariciftci. "Bio-inspired organic field effect transistors." In SPIE Photonic Devices + Applications, edited by Zhenan Bao and Iain McCulloch. SPIE, 2010. http://dx.doi.org/10.1117/12.859117.

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Uno, M., I. Doi, K. Takimiya, and Jun Takeya. "Organic Three-dimensional Field-effect Transistors." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1115-h03-03.

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Biscarini, Fabio, Michele Di Lauro, Marcello Berto, Carlo A. Bortolotti, Yves H. Geerts, and Dominique Vuillaume. "Coupling between electrolyte and organic semiconductor in electrolyte-gated organic field effect transistors (Conference Presentation)." In Organic Field-Effect Transistors XV, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2016. http://dx.doi.org/10.1117/12.2239536.

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Rolin, Cedric, Robby Janneck, Khalid Muhieddine, Thomas Nowack, Hany Ali, Jan Genoe, and Paul Heremans. "Contact resistance characterization in organic thin film transistors (Conference Presentation)." In Organic Field-Effect Transistors XVII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2018. http://dx.doi.org/10.1117/12.2320949.

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Höppner, Marco, David Kneppe, Hans Kleemann, and Karl Leo. "Vapor-deposited vertical organic field-effect transistors with optimized geometry for unrivaled transition frequencies (Conference Presentation)." In Organic Field-Effect Transistors XVII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2018. http://dx.doi.org/10.1117/12.2320990.

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Reports on the topic "Organic Field Effect TransistorsCompared"

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Yang, Yang. High Performance Vertical Organic Field Effect Transistors. Fort Belvoir, VA: Defense Technical Information Center, May 2010. http://dx.doi.org/10.21236/ada564828.

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Wowchak, Andrew. Organic Field Effect Transistors for Large Format Electronics. Fort Belvoir, VA: Defense Technical Information Center, June 2003. http://dx.doi.org/10.21236/ada415261.

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Wen, Ten-Chin, Wei-Yang Chou, Tzung-Fang Guo, and Yeong-Her Wang. Novel Organic Field Effect Transistors via Nano-Modification. Fort Belvoir, VA: Defense Technical Information Center, July 2005. http://dx.doi.org/10.21236/ada468286.

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Ruden, P. P., and Darryl L. Smith. Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel. Office of Scientific and Technical Information (OSTI), April 2007. http://dx.doi.org/10.2172/1304691.

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Jen, Alex K. Molecular Self-Assembly and Interfacial Engineering for Highly Efficient Organic Field Effect Transistors and Solar Cells. Fort Belvoir, VA: Defense Technical Information Center, September 2012. http://dx.doi.org/10.21236/ada581366.

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VanderGheynst, Jean, Michael Raviv, Jim Stapleton, and Dror Minz. Effect of Combined Solarization and in Solum Compost Decomposition on Soil Health. United States Department of Agriculture, October 2013. http://dx.doi.org/10.32747/2013.7594388.bard.

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In soil solarization, moist soil is covered with a transparent plastic film, resulting in passive solar heating which inactivates soil-borne pathogen/weed propagules. Although solarization is an effective alternative to soil fumigation and chemical pesticide application, it is not widely used due to its long duration, which coincides with the growing season of some crops, thereby causing a loss of income. The basis of this project was that solarization of amended soil would be utilized more widely if growers could adopt the practice without losing production. In this research we examined three factors expected to contribute to greater utilization of solarization: 1) investigation of techniques that increase soil temperature, thereby reducing the time required for solarization; 2) development and validation of predictive soil heating models to enable informed decisions regarding soil and solarization management that accommodate the crop production cycle, and 3) elucidation of the contributions of microbial activity and microbial community structure to soil heating during solarization. Laboratory studies and a field trial were performed to determine heat generation in soil amended with compost during solarization. Respiration was measured in amended soil samples prior to and following solarization as a function of soil depth. Additionally, phytotoxicity was estimated through measurement of germination and early growth of lettuce seedlings in greenhouse assays, and samples were subjected to 16S ribosomal RNA gene sequencing to characterize microbial communities. Amendment of soil with 10% (g/g) compost containing 16.9 mg CO2/g dry weight organic carbon resulted in soil temperatures that were 2oC to 4oC higher than soil alone. Approximately 85% of total organic carbon within the amended soil was exhausted during 22 days of solarization. There was no significant difference in residual respiration with soil depth down to 17.4 cm. Although freshly amended soil proved highly inhibitory to lettuce seed germination and seedling growth, phytotoxicity was not detected in solarized amended soil after 22 days of field solarization. The sequencing data obtained from field samples revealed similar microbial species richness and evenness in both solarized amended and non-amended soil. However, amendment led to enrichment of a community different from that of non-amended soil after solarization. Moreover, community structure varied by soil depth in solarized soil. Coupled with temperature data from soil during solarization, community data highlighted how thermal gradients in soil influence community structure and indicated microorganisms that may contribute to increased soil heating during solarization. Reliable predictive tools are necessary to characterize the solarization process and to minimize the opportunity cost incurred by farmers due to growing season abbreviation, however, current models do not accurately predict temperatures for soils with internal heat generation associated with the microbial breakdown of the soil amendment. To address the need for a more robust model, a first-order source term was developed to model the internal heat source during amended soil solarization. This source term was then incorporated into an existing “soil only” model and validated against data collected from amended soil field trials. The expanded model outperformed both the existing stable-soil model and a constant source term model, predicting daily peak temperatures to within 0.1°C during the critical first week of solarization. Overall the results suggest that amendment of soil with compost prior to solarization may be of value in agricultural soil disinfestations operations, however additional work is needed to determine the effects of soil type and organic matter source on efficacy. Furthermore, models can be developed to predict soil temperature during solarization, however, additional work is needed to couple heat transfer models with pathogen and weed inactivation models to better estimate solarization duration necessary for disinfestation.
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Banin, Amos, Joseph Stucki, and Joel Kostka. Redox Processes in Soils Irrigated with Reclaimed Sewage Effluents: Field Cycles and Basic Mechanism. United States Department of Agriculture, July 2004. http://dx.doi.org/10.32747/2004.7695870.bard.

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The overall objectives of the project were: (a) To measure and study in situ the effect of irrigation with reclaimed sewage effluents on redox processes and related chemical dynamics in soil profiles of agricultural fields. (b) To study under controlled conditions the kinetics and equilibrium states of selected processes that affect redox conditions in field soils or that are effected by them. Specifically, these include the effects on heavy metals sorption and desorption, and the effect on pesticide degradation. On the basis of the initial results from the field study, increased effort was devoted to clarifying and quantifying the effects of plants and water regime on the soil's redox potential while the study of heavy metals sorption was limited. The use of reclaimed sewage effluents as agricultural irrigation water is increasing at a significant rate. The relatively high levels of suspended and, especially, dissolved organic matter and nitrogen in effluents may affect the redox regime in field soils irrigated with them. In turn, the changes in redox regime may affect, among other parameters, the organic matter and nitrogen dynamics of the root zone and trace organic decomposition processes. Detailed data of the redox potential regime in field plots is lacking, and the detailed mechanisms of its control are obscure and not quantified. The study established the feasibility of long-term, non-disturbing monitoring of redox potential regime in field soils. This may enable to manage soil redox under conditions of continued inputs of wastewater. The importance of controlling the degree of wastewater treatment, particularly of adding ultrafiltration steps and/or tertiary treatment, may be assessed based on these and similar results. Low redox potential was measured in a field site (Site A, KibutzGivat Brenner), that has been irrigated with effluents for 30 years and was used for 15 years for continuous commercial sod production. A permanently reduced horizon (Time weighted averaged pe= 0.33±3.0) was found in this site at the 15 cm depth throughout the measurement period of 10 months. A drastic cultivation intervention, involving prolonged drying and deep plowing operations may be required to reclaim such soils. Site B, characterized by a loamy texture, irrigated with tap water for about 20 years was oxidized (Time weighted average pe=8.1±1.0) throughout the measurement period. Iron in the solid phases of the Givat Brenner soils is chemically-reduced by irrigation. Reduced Fe in these soils causes a change in reactivity toward the pesticide oxamyl, which has been determined to be both cytotoxic and genotoxic to mammalian cells. Reaction of oxamyl with reduced-Fe clay minerals dramatically decreases its cytotoxicity and genotoxicity to mammalian cells. Some other pesticides are affected in the same manner, whereas others are affected in the opposite direction (become more cyto- and genotoxic). Iron-reducing bacteria (FeRB) are abundant in the Givat Brenner soils. FeRB are capable of coupling the oxidation of small molecular weight carbon compounds (fermentation products) to the respiration of iron under anoxic conditions, such as those that occur under flooded soil conditions. FeRB from these soils utilize a variety of Fe forms, including Fe-containing clay minerals, as the sole electron acceptor. Daily cycles of the soil redox potential were discovered and documented in controlled-conditions lysimeter experiments. In the oxic range (pe=12-8) soil redox potential cycling is attributed to the effect of the daily temperature cycle on the equilibrium constant of the oxygenation reaction of H⁺ to form H₂O, and is observed under both effluent and freshwater irrigation. The presence of plants affects considerably the redox potential regime of soils. Redox potential cycling coupled to the irrigation cycles is observed when the soil becomes anoxic and the redox potential is controlled by the Fe(III)/Fe(II) redox couple. This is particularly seen when plants are grown. Re-oxidation of the soil after soil drying at the end of an irrigation cycle is affected to some degree by the water quality. Surprisingly, the results suggest that under certain conditions recovery is less pronounced in the freshwater irrigated soils.
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Bradford, Joe, Itzhak Shainberg, and Lloyd Norton. Effect of Soil Properties and Water Quality on Concentrated Flow Erosion (Rills, Ephermal Gullies and Pipes). United States Department of Agriculture, November 1996. http://dx.doi.org/10.32747/1996.7613040.bard.

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Concentrated flow erosion in rills, pipes, ephermal gullies, and gullies is a major contributor of downstream sedimentation. When rill or gullies form in a landscape, a 3- to 5-fold increase in soil loss commonly occurs. The balance between the erosive power of the flow and the erosion resistance of the bed material determines the rate of concentrated flow erosion. The resistance of the bed material to detachment depends primarily on the magnitude of the interparticle forces or cohesion holding the particles and aggregates together. The effect of soil properties on bed material resistance and concentrated flow erosion was evaluated both in the laboratory and field. Both rill erodibility and critical hydraulic shear were greater when measured in 9.0 m long rills under field conditions compared with laboratory mini-flumes. A greater hydraulic shear was required to initiate erosion in the field compared to the mini-flume because of the greater aggregate and clod size and stability. Once erosion was initiated, however, the rate of erosion as a function of hydraulic shear was greater under field conditions because of the greater potential for slaking upon wetting and the greater soil surface area exposed to hydraulic shear. Erosion tests under controlled laboratory conditions with the mini-flume allowed individual soil variables to be studied. Attempts to relate rill erosion to a group soil properties had limited success. When individual soil properties were isolated and studied separately or grouped separately, some trends were identified. For example, the effect of organic carbon on rill erodibility was high in kaolinitic soils, low in smectitic soils, and intermediate in the soils dominated by illite. Slow prewetting and aging increased the cohesion forces between soil particles and decreased rill erodibility. Quick prewetting increased aggregate slaking and increased erodibility. The magnitude of the effect of aging depended upon soil type. The effect of clay mineralogy was evaluated on sand/clay mixtures with montmorillonite (M), Illite (I), and kaolinite (K) clays. Montmorillonite/sand mixtures were much less erodible than either illite or kaolonite sand mixtures. Na-I and Na-K sand mixtures were more erodible than Ca-I and Ca-K due to increased strength from ionic bonding and suppression of repulsive charges by Ca. Na-M was less erodiblethan Ca-M due to increased surface resulting from the accessibility of internal surfaces due to Na saturation. Erodibility decreased when salt concentration was high enough to cause flocculation. This occurred between 0.001 mole L-1 and 0.01 mole L-1. Measuring rill erodibility in mini-flumes enables the measurement of cohesive forces between particles and enhances our ability to learn more about cohesive forces resisting soil detachment under concentrated water flow.
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Pesis, Edna, Elizabeth J. Mitcham, Susan E. Ebeler, and Amnon Lers. Application of Pre-storage Short Anaerobiosis to Alleviate Superficial Scald and Bitter Pit in Granny Smith Apples. United States Department of Agriculture, January 2013. http://dx.doi.org/10.32747/2013.7593394.bard.

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There is increased demand for high quality fruit produced and marketed with reduced chemical inputs to minimize toxic effects on human health and the environment. Granny Smith (GS) apple quality is reduced by two major physiological disorders, superficial scald and bitter pit (BP). These disorders cause great loss to apple growers worldwide. Superficial scald is commonly controlled by chemical treatments, mainly the antioxidant diphenylamine (DPA) and/or the ethylene action inhibitor, 1-methylcyclopropene (1–MCP). Both chemicals are ineffective in controlling bitter pit incidence. We proposed to investigate the beneficial use of non-chemical, abiotic stress with low O2 (LO2) applied for 10d at 20°C on GS apple fruit. During the project we expanded the treatment to more apple cultivars, Golden Delicious (GD) and Starking Delicious (SD) and another pome fruit, the pear. Apple and pear have similar physiological disorders that develop during cold storage and we examined if the LO2 treatment would also be effective on pear. Application of 0.5% LO2 atmosphere for 10d at 20°C or 500ppb 1-MCP at 20°C prior to cold storage at 0°C, was effective in reducing superficial scald in GS apple. Moreover, LO2 pretreatment was also effective in reducing bitter pit (BP) development in California GS and Israeli GD and SD apples The BP symptoms in GS from California were much more prominent, so the effect of LO2 was more dramatic than the effect on the Israeli cvs. GD and SD, nevertheless the LO2 treatment showed the same trend in all cultivars in reducing BP. The LO2 and 1-MCP -treated fruit exhibited lower levels of ethylene, - farnesene and its oxidation product, 6-methyl-5-hepten-2-one (MHO), as determined by SPME/GC-MS analysis. In addition, LO2 pretreatment applied to California Bartlett or Israeli Spadona pears was effective in reducing superficial scald, senescent scald and internal breakdown after 4 m of cold storage at 0°C. For GS apple, low-temperature storage resulted in oxidative stress and chilling injury, caused by increased production of superoxide anions which in turn led to the generation of other dangerous reactive oxygen species (ROS). Using confocal laser-scanning microscopy and H2O2 measurements of apple peel, we observed ROS accumulation in control fruit, while negligible amounts were found in LO2 and 1-MCP treated fruit. Gene-expression levels of ROS-scavenging enzymes were induced by the various pretreatments: catalase was induced by LO2 treatment, whereas Mn superoxide dismutase was induced by 1-MCP treatment. We assume that LO2 and 1-MCP pretreated fruit remained healthier due to reduced production of ethylene and reactive oxygen substances, such as MHO, during cold storage. The LO2-treated apple exhibited greener peel and firmer fruit after 6 m of cold storage, and the fruit had high crispiness leading to high taste preference. In both pear cultivars, the LO2 treatment led to a reduction in internal breakdown and browning around the seed cavity. We tested the LO2 pre-storage treatment on a semi-commercial scale that would be applicable to a small organic grower by sealing the fruit within the plastic field bins. The treatment was most effective with a continuous flow of nitrogen through the bins; however, a single 6 hour flush of nitrogen was also fairly effective. In addition, we determined that it was very important to have the oxygen levels below 0.5% for approximately 10 days to achieve good scald control, not counting the time required to reduce the oxygen concentration. Our LO2 technology has been proven in this project to be effective in reducing several physiological disorders developed in pome fruit during cold storage. We hope that our non-chemical treatment which is friendly to the environment will be used in the near future for the organic apple and pear industry. The next step should be an analysis of the cost-benefits and commercial feasibility.
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Chejanovsky, Nor, and Bruce D. Hammock. Enhancement of Baculoviruses' Insecticidal Potency by Expression of Synergistic Anti-Insect Scorpion Toxins. United States Department of Agriculture, January 1996. http://dx.doi.org/10.32747/1996.7573070.bard.

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The extensive use or non-specific, hazardous, chemical insecticides demands the development of "healthier" alternative means for pest control. Insect-specific, baculoviruses expressing anti-insect toxin genes (from mites or scorpions) demonstrated in laboratory assays and field trials enhanced insecticidal activity and provided some protection from lepidopterous larvae to agricultural plantations. To utilize recombinant baculoviruses as commercial biopesticides in row crop agriculture, further increase in their speed of kill should be achieved and the reduction in crop damage should be comparable to the levels obtained with organic insecticides (the problem). In this project we developed strategies to improve further the efficacy of recombinant baculoviruses which included: I) Synergism among baculoviruses expressing different anti-insect toxins: a) Synergism among two complementary anti-insect scorpion neurotoxins each expressed by a separate recombinant baculovirus, both regulated by the same or a different viral promoter. b) Synergism among two complementary anti-insect scorpion neurotoxins expressed by the same recombinant virus, both regulated by the same or a different viral promoter respectively. The above included two classes of pharmacologically complementary toxins: i) toxins with strictly anti-insect selectivity (excitatory and depressant); ii) toxins with preferential anti-insect activity (anti-insect alpha toxins). c) Synergism among wild type viruses, recombinant baculoviruses and chemicals (insecticides and phytochemicals) II) Identification of more potent toxins against lepidopterous pests for their expression by baculoviruses. Our approach was based on the synergistic effect displayed by the combined application of pairs of anti-insect toxins to blowfly and lepidopterous larvae that resulted in 5 fold increase in their insecticidal activity without apparent increase in their anti-mammal toxicity (toxins LqhIT2 and LqhaIT, LqhIT2 and AaIT, and LqhaIT and AaIT (1). Thus, we developed new concepts and produced a "second generation" of recombinant baculoviruses with enhanced potencies and speeds of kill comparable to classical insecticides. These achievements contribute to make these biopesticides a viable alternative to minimize the use of hazardous chemicals in pest control. Also, our project contributed new tools and model systems to advance the study of insect sodium channels.
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