Relevant bibliographies by topics / Optoelectronic transistors

Academic literature on the topic 'Optoelectronic transistors'

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Published: 14 March 2023

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Journal articles on the topic "Optoelectronic transistors"

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Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)." Materials 14, no. 13 (July 5, 2021): 3756. http://dx.doi.org/10.3390/ma14133756.

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Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.
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Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this technology is the lack of practical silicon light sources—Si lasers and efficient Si light-emitting devices (LEDs)—though investigators are “getting close” to the LED.Silicon-based optoelectronics refers to the integration of photonic and electronic components on a Si chip or wafer. The photonics adds value to the electronics, and the electronics offers low-cost mass-production benefits. The electronics includes complementary-metal-oxide semiconductors (CMOS), very large-scale integration (VLSI), bipolar CMOS, SiGe/Si heterojunction bipolar transistors, and heterostructure field-effect transistors. In this discussion, we will use a loose definition of optoelectronics that includes photonic and optoelectronic integrated circuits (PICs and OEICs), Si optical benches, and micro-optoelectromechanical (MOEM) platforms. Optoelectronic chips and platforms are subsystems of computer systems, communication networks, etc. Silicon substrates feature a superior native oxide, in addition to excellent thermal, mechanical, and economic properties. Silicon wafers “shine” as substrates for PICs and OEICs.
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Pan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication." MRS Advances 5, no. 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.

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AbstractTraditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fabricated as one integral transistor. With embedded nonlinear optical films, the Photonic CMOSFETs have the capability of detecting and generating focused laser beams of various frequencies to perform optical computing, signal modulation, polarization, and multiplexing for digital / analog processing and communication.
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Huseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (December 5, 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.

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Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect transistors. The description of the issues regarding charge carrier transport and other optoelectronic properties of organic semiconductors is also provided. The doping agents and methods commonly applied for organic semiconductors along with their fundamental mechanisms are introduced.
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Zhang, Junyao, Yang Lu, Shilei Dai, Ruizhi Wang, Dandan Hao, Shiqi Zhang, Lize Xiong, and Jia Huang. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems." Research 2021 (February 22, 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.

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For the realization of retina-inspired neuromorphic visual systems which simulate basic functions of human visual systems, optoelectronic synapses capable of combining perceiving, processing, and memorizing in a single device have attracted immense interests. Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)3) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. The organic heterojunction serves as a basis for distinctive synaptic characteristics under different wavelengths of light. Furthermore, synaptic transistor arrays are fabricated to demonstrate their optical perception efficiency and color recognition capability under multiple illuminating conditions. The wavelength-tunability of synaptic behaviors further enables the mimicry of mood-modulated visual learning and memorizing processes of humans. More significantly, the computational dynamics of neurons of synaptic outputs including associated learning and optical logic functions can be successfully demonstrated on the presented devices. This work may locate the stage for future studies on optoelectronic synaptic devices toward the implementation of artificial visual systems.
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Gao, Haikuo, Jinyu Liu, Zhengsheng Qin, Tianyu Wang, Can Gao, Huanli Dong, and Wenping Hu. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors." Nanoscale 12, no. 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.

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Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (April 1, 2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other properties that make ZnO attractive for a variety of applications are discussed. Various applications of ZnO thin film and its devices such as light-emitting diodes (LED), UV sensors, biosensors, photodetectors and TFT that have been described by various research groups are presented.
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Wu, Jieyun, Qing Li, Wen Wang, and Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups." Mini-Reviews in Organic Chemistry 16, no. 3 (January 25, 2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.

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Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrier transfer for optoelectronics. In this review, we summarize the recent progress of BDT-based conjugated polymers in optoelectronic devices. BDT-based conjugated materials are classified into onedimensional (1D) and two-dimensional (2D) BDT-based conjugated polymers. Firstly, we introduce the fundamental information of BDT-based conjugated materials and their application in optoelectronic devices. Secondly, the design and synthesis of alkyl, alkoxy and aryl-substituted BDT-based conjugated polymers are discussed, which enables the construction of one-dimensional and two-dimensional BDTbased conjugated system. In the third part, the structure modification, energy level tuning and morphology control and their influences on optoelectronic properties are discussed in detail to reveal the structure- property relationship. Overall, we hope this review can be a good reference for the molecular design of BDT-based semiconductor materials in optoelectronic devices.
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Urey, Z., D. Wake, D. J. Newson, and I. D. Henning. "Comparison of InGaAs transistors as optoelectronic mixers." Electronics Letters 29, no. 20 (1993): 1796. http://dx.doi.org/10.1049/el:19931195.

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Hong, Tu, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou, and Ya-Qiong Xu. "Polarized photocurrent response in black phosphorus field-effect transistors." Nanoscale 6, no. 15 (2014): 8978–83. http://dx.doi.org/10.1039/c4nr02164a.

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Dissertations / Theses on the topic "Optoelectronic transistors"

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Bird, Matthew J. "Optoelectronic processes in polyfluorene ambipolar transistors." Thesis, University of Cambridge, 2011. https://www.repository.cam.ac.uk/handle/1810/256013.

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This thesis describes the use of charge modulation spectroscopy to investigate the negative and positive charge-induced absorptions in conjugated semiconducting polymers as a way to experimentally compare the wavefunctions of electrons and holes. Interactions between light and charges including fluorescence quenching and photocurrent are also explored. Conjugated polymers have an electronic structure with an energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). In the neutral ground state, there are no optical transitions at photon energies lower than this gap. When an excess charge is added to a conjugated polymer, the charge couples with a local structural reorganisation forming a localised entity known as a polaron. The polaron has two new electronic states within the energy gap symmetrically spaced about the midgap energy. Typically two new optical transitions between the polaronic states are allowed and can be accessed with sub gap energies. In order to probe the sub gap polaron absorptions charges can be added by electrical injection. Electrical injection in a transistor configuration provides a controlled way to measure the absorption of a known number of charges in the solid state and without triplet or singlet absorptions complicating the spectra as observed in photo-induced absorption. By taking advantage of recently developed ambipolar transistors where both holes and electrons can be accumulated in the same device a comparison can be made between the negative and positive polaron wavefunctions. Two polyfluorene polymers were chosen as examples where quantum chemical calculations predict either the same or different wavefunctions for the electron and hole. Poly(9,9-di-n-octylfluorene) (F8) is a hydrocarbon-only polymer which is expected to have similar electron and hole wavefunctions, whereas the related co-polymer, poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) is expected to have an electron wavefunction that is more localized that the hole. The ambipolar transistors used in this thesis are typified by a dominant contact resistance which introduces difficulties in the charge modulation spectroscopy experiment. New techniques for simultaneous electrical and optical characterisation are developed and new device structures and fabrication processes are introduced in order to overcome a number of artifacts and improve the accuracy of the measurement allowing quantitative comparisons to be made. The increase in transistor or diode current with energy gap illumination and the quenching of fluorescence in the presence of charges is also investigated and a new method for imaging charge trapping and device operation in transistors with luminescent semiconductors is introduced.
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Liu, Chin Pang. "Optoelectronic mixing in heterojunction bipolar transistors." Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312033.

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Huang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.

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Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and current gains (β). The device performances of Zn- and C-doped LETs have been compared, which is explained by a charge control analysis involving the quantum capture and recombination process in the QWs. A TL based on a C-doped double heterostructure (DH-TL) with single QW was designed and fabricated. The device lases at 77 K with a threshold current density (Jth) of 2.25 kA/cm2, emission wavelength (λ) at ~1.55 µm, and β of 0.02. The strong intervalence band absorption (IVBA) is considered as the main intrinsic optical loss that prohibits the device from lasing at room temperature. Based on a threshold condition analysis taking into account the strong IVBA, it is found that room-temperature lasing of a DH-TL is achieved only when the base thickness and doping level are within a specific narrow range and improved performance is expected in a separate confinement heterostructure (SCH) TL.
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Loga, Rodney Izzat. "HBT/DHBTs for monolithic optoelectronic interfaces." Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268719.

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Tan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.

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Ho, Kai Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices." HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/816.

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With the progression towards lighter but larger-display self-sustainable mobile devices, device efficiency becomes increasingly important, owing to the higher power display consumption but at the same time more limitation on the size and volume of energy storage. In this thesis, selected aspects regarding to efficiency of three types of optoelectronic devices, indoor photovoltaics (IPVs), perovskite thin-film transistors (TFTs) and organic light-emitting diodes (OLEDs) have been investigated. IPVs can make off-grid devices self-sustainable by harvesting ambient light energy. Its weak irradiance necessitates high-efficiency IPVs to generate sufficient power. Our work addresses the need of knowing the limit of the device parameters for correct evaluation and understanding the efficiency loss for developing clinical tactics. We delivered a general scheme for evaluating the limiting efficiency and the corresponding device parameters of IPVs under various lights, illuminance and material bandgap. In contrast to the AM1.5G conditions, a maximum power conversion efficiency (PCE) of 51-57 % can be achieved under the optimal bandgap of 1.82-1.96 eV. We also propose using the second thickness peak of interference instead of the first as a better optimal absorber thickness after identifying the finite absorption as the major source of efficiency loss. The work provides insights for device evaluation and material design for efficient IPV devices. The novel hybrid organic-inorganic perovskites have gained enormous research interest for its various excellent optoelectronic properties such as high mobility. TFT as an alternative application to the majorly focused photovoltaics is realized in this work. There are few reports on perovskite TFTs due to wetting issues. By employing polymethacrylates with ester groups and aromatic substituents which provide polar and cation-π interactions with the Pb2+ ions, quality films could be fabricated with large crystals and high electron mobility in TFTs. We further improved the performance by resolving interfacial mixing between the perovskite and the polymer using the crosslinkable SU-8, achieving the highest mobility of 1.05 cm2 V−1 s−1. Subsequently, we cured the grain boundaries using methylamine solvent vapor annealing, suppressing the TFT subthreshold swing. The work provides a map for the improvement of perovskite TFTs. It has been revealed that molecular orientations of the emitters in OLEDs with the transition dipole moment lying in plane enhances light outcoupling efficiency. Multiple experimental techniques are needed to provide complementary orientation information and their physical origin. Here, we propose using TFT to probe the orientation of the phosphorescent emitters. Homoleptic fac-Ir(ppy)3 and heteroleptic trans-Ir(ppy)2(acac) and trans-Ir(ppy)2(tmd) were deposited on polystyrene (PS) and SiO2 substrates. Compared to the PS surface inducing isotropic orientation as the control, trans-Ir(ppy)2(acac) and trans-Ir(ppy)2(tmd) possessed decreased carrier mobilities on SiO2. With the study of initial film growth, we infer that preferred orientation induced by the polar SiO2 surface led to an increase in energetic disorder in the well-stacked trans-Ir(ppy)2(acac) and hopping distance in the amorphous trans-Ir(ppy)2(tmd). The highly symmetric fac-Ir(ppy)3 remained its isotropic orientation despite the dipolar interaction. Surprisingly, the TFT technique gives much higher sensitivity to surface-induced orientation, and thus may potentially serve as a unique electrical probe for molecular orientation.
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Ho, Ka Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices." HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/873.

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With the progression towards lighter but larger-display self-sustainable mobile devices, device efficiency becomes increasingly important, owing to the higher power display consumption but at the same time more limitation on the size and volume of energy storage. In this thesis, selected aspects regarding to efficiency of three types of optoelectronic devices, indoor photovoltaics (IPVs), perovskite thin-film transistors (TFTs) and organic light-emitting diodes (OLEDs) have been investigated. IPVs can make off-grid devices self-sustainable by harvesting ambient light energy. Its weak irradiance necessitates high-efficiency IPVs to generate sufficient power. Our work addresses the need of knowing the limit of the device parameters for correct evaluation and understanding the efficiency loss for developing clinical tactics. We delivered a general scheme for evaluating the limiting efficiency and the corresponding device parameters of IPVs under various lights, illuminance and material bandgap. In contrast to the AM1.5G conditions, a maximum power conversion efficiency (PCE) of 51-57 % can be achieved under the optimal bandgap of 1.82-1.96 eV. We also propose using the second thickness peak of interference instead of the first as a better optimal absorber thickness after identifying the finite absorption as the major source of efficiency loss. The work provides insights for device evaluation and material design for efficient IPV devices. The novel hybrid organic-inorganic perovskites have gained enormous research interest for its various excellent optoelectronic properties such as high mobility. TFT as an alternative application to the majorly focused photovoltaics is realized in this work. There are few reports on perovskite TFTs due to wetting issues. By employing polymethacrylates with ester groups and aromatic substituents which provide polar and cation-π interactions with the Pb2+ ions, quality films could be fabricated with large crystals and high electron mobility in TFTs. We further improved the performance by resolving interfacial mixing between the perovskite and the polymer using the crosslinkable SU-8, achieving the highest mobility of 1.05 cm2 V−1 s−1. Subsequently, we cured the grain boundaries using methylamine solvent vapor annealing, suppressing the TFT subthreshold swing. The work provides a map for the improvement of perovskite TFTs. It has been revealed that molecular orientations of the emitters in OLEDs with the transition dipole moment lying in plane enhances light outcoupling efficiency. Multiple experimental techniques are needed to provide complementary orientation information and their physical origin. Here, we propose using TFT to probe the orientation of the phosphorescent emitters. Homoleptic fac-Ir(ppy)3 and heteroleptic trans-Ir(ppy)2(acac) and trans-Ir(ppy)2(tmd) were deposited on polystyrene (PS) and SiO2 substrates. Compared to the PS surface inducing isotropic orientation as the control, trans-Ir(ppy)2(acac) and trans-Ir(ppy)2(tmd) possessed decreased carrier mobilities on SiO2. With the study of initial film growth, we infer that preferred orientation induced by the polar SiO2 surface led to an increase in energetic disorder in the well-stacked trans-Ir(ppy)2(acac) and hopping distance in the amorphous trans-Ir(ppy)2(tmd). The highly symmetric fac-Ir(ppy)3 remained its isotropic orientation despite the dipolar interaction. Surprisingly, the TFT technique gives much higher sensitivity to surface-induced orientation, and thus may potentially serve as a unique electrical probe for molecular orientation.
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8

Fiebig, Matthias. "Spatially resolved electronic and optoelectronic measurements of pentacene thin film transistors." Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-122033.

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Unal, Selim. "Field-effect transistors and optoelectronic devices based on emerging atomically thin materials." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/27140.

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Development of field-effect transistors and their applications is advancing at a relentless pace. Since the discovery of graphene, a single layer of carbon atoms, the ability to isolate and fabricate devices on atomically thin materials has marked a paradigm shift in the timeline of transistor technologies. In this thesis, electrical and optical properties of atomically thin structures of graphene and tungsten disulfide (WS2) are investigated. Transport in graphene side-gated transistors and contact resistance at the metal-WS2 interface are presented. Finally, the optoelectronic performance of the hybrid graphene-WS2 devices is examined. Presently, atomically thin semiconductors grown by chemical vapour deposition are of growing interest by a broad scientific community. For this work of thesis, an air stable material which requires non-toxic gases for the growth such as WS2 is selected. A considerable contact resistance at the metal/WS2 interface is found to hamper the electrical performance of WS2 transistors. The possible origin of this contact resistance is presented in this thesis. The graphene field-effect transistors with graphene side gates are fabricated by a single step of electron beam lithography and an O2 etching procedure. A comparative study of the electrical transport properties as a function of a bias applied to the side and back gate is conducted. The side gates allow for a much more efficient modulation of the charge density in the graphene channel owing to the larger maximum electric field which can experimentally be accomplished. Furthermore, the leakage between the side gate and the graphene channel is studied in a vacuum environment. It is found that the transport between graphene and the side gate is associated with Fowler-Nordheim tunnelling and Frenkel-Poole transport. More specifically, for voltages less than 60 V, the Frenkel-Poole transport dominates the transport, whereas the Fowler-Nordheim tunnelling governs the transport at higher bias. Finally, optoelectronic properties of graphene-WS2 heterostructure are explored. An ionic polymer is used as a top gate to enhance the screening of long-lived trap charges. Responsivities as large as 10^6 A/W under illumination with 600 nm wavelength of light are demonstrated at room temperature. The fall and rise time are in the order of milliseconds due to the screening of the traps by the ionic polymer. This study is the first presentation of the transition metal dichalcogenide (TMDC)-graphene hybrid heterostructure with such a high photoresponsivity and fast response times.
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Yang, Tiebin. "Interfacial Engineering of Thin Single-Crystal Lead Halide Perovskites for High-Performance Optoelectronic Devices." Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/28205.

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Metal halide perovskites have demonstrated great potential in energy and optoelectronic device applications, due to their excellent optoelectronic properties. Among all the forms of halide perovskites, single crystals have attracted increasing research interest because of their longer carrier diffusion length, larger charge carrier mobility, and superior stability. However, the practical applications for the bulk perovskite crystals have been limited because of their large thickness and the difficulty of integration. In this regard, searching for the approaches to develop the high-quality halide perovskite thin single crystals with integration compatibility is highly desired, which would further improve the performance of the related devices. Moreover, enabling the halide perovskite thin single crystals with tunable thicknesses and sizes can also promote the construction of the single-crystal halide perovskite heterostructures with well-defined interfaces, which would open up a new realm for the perovskite-based electronic or optoelectronic devices. In this thesis, the main aims are to develop the facile solution-processed methods to grow the high-quality epitaxial halide perovskite thin single crystals or various mixed-dimensional single-crystal heterostructures and probe the effect of interfaces on the material properties and the related device performance. In particular, the interfacial engineering on the epitaxial thin single crystals and the mixed-dimensional lateral heterostructures further enable various electronic and optoelectronic devices with improved performance and stability. Meanwhile, the thesis also provides in-depth insights into the mechanisms of ion migration and ionic diffusion with the related perovskite systems. The involved work projects and the related findings highlight the great potential and feasibility of halide perovskite thin single crystals and heterostructures in widely-ranged electronic and optoelectronic device applications.
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Books on the topic "Optoelectronic transistors"

1

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1997 London, England). 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. [New York]: IEEE, 1997.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1993 London, UK). High performance electron devices for microwave and optoelectronic applications, EDMO '93, King's College London, 18th October, 1993: Announcement & programme for workshop. [London]: IEEE, 1993.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 University of Leeds). 1996 High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, EDMO. [New York]: IEEE, 1996.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1995 London, England). 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications: EDMO. Piscataway, NJ: IEEE Service Center, 1995.

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Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. [Washington, D.C.]: National Aeronautics and Space Administration, 1988.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 London, England). 1996 High performance electron devices for microwave and optoelectronic applications workshop: EDMO 96 : [Weetwood Hall, the University of Leeds, 25-26 November 1996]. Piscataway, N.J: IEEE Service Center, 1996.

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SiGe heterojunction bipolar transistors. Chichester: Wiley, 2004.

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Taiwan de jing tan hao: Tai Ri Han TFT shi ji zhi zheng. Taiabei Shi: Shi bao wen hua chu ban qi ye gu fen you xian gong si, 2004.

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Advanced, Workshop on Frontiers in Electronics (1997 Santa Cruz de Tenerife Spain). 1997 Advanced Workshop on Frontiers in Electronics: WOFE '97 proceedings : Puerto de la Cruz, Tenerife, Spain, 6-11 January 1997. New York: Institute of Electrical and Electronics Engineers, 1997.

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Im, Seongil. Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors. Dordrecht: Springer Netherlands, 2013.

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Book chapters on the topic "Optoelectronic transistors"

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Cooper, Donald E., and Steven C. Moss. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors." In Picosecond Electronics and Optoelectronics, 62–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_11.

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Kusmartsev, F. V., W. M. Wu, M. P. Pierpoint, and K. C. Yung. "Application of Graphene Within Optoelectronic Devices and Transistors." In Progress in Optical Science and Photonics, 191–221. Singapore: Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-287-242-5_9.

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Lambrechts, Wynand, and Saurabh Sinha. "Frequency Response of Optoelectronic Receivers: The Motivation for Faster Transistors." In Signals and Communication Technology, 167–200. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47403-8_6.

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Prelipceanu, Marius, and Adrian Graur. "Study of New Organic Field Transistors for RFID, Optoelectronic and Mobile Applications." In Lecture Notes in Electrical Engineering, 135–42. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05440-7_11.

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Sahri, Nabil, Tadao Nagatsuma, Taiichi Otsuji, Naofumi Shimizu, and Makoto Yaita. "Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer." In Springer Series in Chemical Physics, 194–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-72289-9_58.

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Albrecht, H. "Pin Photodiodes and Field-Effect Transistors for Monolithically Integrated InP/InGaAs Optoelectronic Circuits." In Micro System Technologies 90, 767–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_110.

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Tamura, Hiroyuki. "Theoretical Analysis on Optoelectronic Properties of Organic Materials: Solar Cells and Light-Emitting Transistors." In Progress in Nanophotonics 3, 57–82. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-11602-0_2.

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Wang, Chengliang, Lang Jiang, and Wenping Hu. "Organic/Polymeric Field-Effect Transistors." In Organic Optoelectronics, 95–170. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch3.

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Meng, Qing, Huanli Dong, and Wenping Hu. "Organic/Polymeric Semiconductors for Field-Effect Transistors." In Organic Optoelectronics, 43–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch2.

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Tang, Qinqxin, Yanhong Tong, and Wenping Hu. "Organic Circuits and Organic Single-Molecule Transistors." In Organic Optoelectronics, 171–276. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch4.

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Conference papers on the topic "Optoelectronic transistors"

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Cooper, Donald E. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.thc3.

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Picosecond optoelectronics provides the capability to measure the frequency response of solidstate devices with much greater bandwidth than conventional techniques.1 Short electrical pulses are fed into device terminals, and the output is optoelectronically sampled to measure the device impulse response function. The Fourier transform of this data yields the frequency response curve. All elements of the scattering matrix (S matrix) can be obtained through the use of various combinations of device terminals as input and output ports. Thus all information obtained from conventional CW network analyzer techniques is available from the time-domain picosecond optoelectronic data, with excellent bandwidth capability and electronic simplicity. Here we present impulse response measurements of a submicron field effect transistor.
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Shur, Michael S., and Mohamed A. Khan. "Optoelectronic GaN-based field effect transistors." In Photonics West '95, edited by Manijeh Razeghi, Yoon-Soo Park, and Gerald L. Witt. SPIE, 1995. http://dx.doi.org/10.1117/12.206879.

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Schuermeyer, Fritz. "Optoelectronic pseudomorphic high-electron-mobility transistors." In Photonics West '97, edited by Yoon-Soo Park and Ramu V. Ramaswamy. SPIE, 1997. http://dx.doi.org/10.1117/12.264208.

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Grot, Annette, Steven Lin, and Demetri Psaltis. "Optoelectronic neurons using MSM detectors in GaAs." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk4.

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We present a new GaAs integrated optoelectronic neuron for use in neural networks. We have previously demonstrated that the integration of photodetectors, thresholding transistors, and a light source on a single substrate allows one to have high neuron density with acceptable power dissipation. In this paper we report a circuit in which we used a double heterostructure LED (light emitting diode) as the light source. We use an LED rather than laser diodes because LEDs can be operated with small currents, due to the lack of a threshold current. To minimize the total mesa height and maintain high LED quantum efficiency, MSM (metal–semiconductor–metal) photodetectors were used. The thresholding transistor was a MESFET (metal–semiconductor field-effect transistor). The total mesa height is less than 3 μm. Since no two devices share an epitaxial layer, each device is individually optimized. Our circuit uses two photodetectors, one to set the threshold voltage and the other to detect the signal. With this circuit, we can also build both excitatory and inhibitory neurons. Results from our experimental studies are presented.
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Bryan, Robert P., Jack L. Jewell, Greg R. Olbright, and Winston S. Fu. "Smart pixel optoelectronic interconnects: integrated microlasers/transistors." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Ray T. Chen. SPIE, 1993. http://dx.doi.org/10.1117/12.147100.

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Pavuna, Davor. "Applications of HTSC Films in Hybrid Optoelectronic Devices." In Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321825.

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Skogman, R. A. "Atomic layer epitaxy of YBaCuO for optoelectronic applications." In Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321837.

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Lin, Steven, and Demetri Psaltis. "GaAs optoelectronic neurons." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk1.

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Monolithically integrated optoelectronic circuits have emerged as a viable solution for implementing nonlinear operations and providing gain in optical neural networks. However, before they can be incorporated into a practical system, these devices must be in the form of large arrays and have sufficient optical gain to compensate for the optical losses due to the low efficiency of the interconnection medium. Furthermore, they much dissipate little electrical power so that the performance will not be limited by heat dissipation and at the same time exhibit high input sensitivity to accommodate the low input power received by the neurons. In this paper, several integration schemes utilizing GaAs light emitting diodes (LEDs), heterojunction bipolar phototransistors. metal-semiconductor field-effect transistors (MESFETs) and optical field-effect transistors (OPFETs) are presented. Typical results in optoelectronic neurons that incorporate phototransistors as the detectors show a differential optical gain of 10-40, which the neurons that incorporate OPFETs as detectors show a gain of approximately 80. The electrical power dissipations in these neurons are less than 2 mW/neuron and the switching energy is measured to be between 10 and 40 pJ. While these results generate optimism, issues like scalability, processing limitations and compatibility, device integrability, input-output isolation, and tradeoff between power dissipation and optical gain still need to be addressed before high density arrays can be practically incorporated in neural networks.
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Kang, Youn-Seon, Bo Xiao, Ya I. Alivov, Qian Fan, Jinqiao Xie, and Hadis Morko. "Ferroelectric PZT/AlGaN/GaN field effect transistors." In Integrated Optoelectronic Devices 2006, edited by Cole W. Litton, James G. Grote, Hadis Morkoc, and Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.657584.

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Hsieh, Chi-Ti, Pi-Ju Cheng, Chih-Hsien Lin, and Shu-Wei Chang. "Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers." In Physics and Simulation of Optoelectronic Devices XXVII, edited by Marek Osiński, Yasuhiko Arakawa, and Bernd Witzigmann. SPIE, 2019. http://dx.doi.org/10.1117/12.2508189.

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Reports on the topic "Optoelectronic transistors"

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Cooper, Donald E., and Steven C. Moss. Picosecond Optoelectronic Diagnostics of Field Effect Transistors,. Fort Belvoir, VA: Defense Technical Information Center, June 1986. http://dx.doi.org/10.21236/ada170503.

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Cooper, Donald E., and Steven C. Moss. Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor). Fort Belvoir, VA: Defense Technical Information Center, June 1986. http://dx.doi.org/10.21236/ada170618.

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