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Journal articles on the topic 'Optoelectronic characteristics'

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Author: Grafiati

Published: 10 December 2022

Last updated: 29 January 2023

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1

Xie, De-Hua, Fei-Fei Wang, Hao Lü, Min-Yong Du, and Wen-Jie Xu. "Optoelectronic characteristics of CuO nanorods." Chinese Physics B 22, no. 5 (May 2013): 058103. http://dx.doi.org/10.1088/1674-1056/22/5/058103.

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2

Sakata, H., Y. Nagao, and Y. Matsushima. "Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch (S-TOPS)." Journal of Optics A: Pure and Applied Optics 1, no. 4 (January 1, 1999): 435–37. http://dx.doi.org/10.1088/1464-4258/1/4/302.

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3

Li, Q. H., T. Gao, and T. H. Wang. "Optoelectronic characteristics of single CdS nanobelts." Applied Physics Letters 86, no. 19 (May 9, 2005): 193109. http://dx.doi.org/10.1063/1.1923186.

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4

Wang, Feifei, Chong Wang, Jiannong Chen, and Yongjiang Yu. "Optoelectronic characteristics of single ZnAlO nanotetrapod." Materials Letters 66, no. 1 (January 2012): 270–72. http://dx.doi.org/10.1016/j.matlet.2011.08.070.

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5

Wu, Jing, Yunshan Zhao, Minglei Sun, Minrui Zheng, Gang Zhang, Xinke Liu, and Dongzhi Chi. "Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering." Nanophotonics 9, no. 8 (February 21, 2020): 2467–74. http://dx.doi.org/10.1515/nanoph-2019-0542.

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AbstractRecently, layered two-dimensional (2D) palladium diselenide (PdSe2), with a unique low- symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herein, we studied the optoelectronics transport characteristics of high-quality PdSe2-based photodetectors with different thicknesses. We demonstrated an enhancement of PdSe2 photodetector performance owing to the band engineering via a thickness reduction. The highest responsivity of 5.35 A/W can be achieved with an external quantum efficiency of 1250% at the wavelength of 532 nm. We attribute such high performance in photoresponsivity to the high valley convergence in the conduction band of layered PdSe2, in agreement with first-principles calculation. Our results offer new insight into the layer-dependent optoelectronic properties of PdSe2 and open new avenues in engineering next-generation 2D-based electronics and optoelectronics.

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GUO, DER-FENG, JUNG-HUI TSAI, TZU-YEN WENG, CHIH-HUNG YENG, PO-HSIEN LAI, SSU-YI FU, CHING-WEN HUNG, and WEN-CHAU LIU. "INVESTIGATION ON HETEROSTRUCTURAL OPTOELECTRONIC SWITCHES." Surface Review and Letters 15, no. 01n02 (February 2008): 139–44. http://dx.doi.org/10.1142/s0218625x08011123.

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GaAs / InGaP and AlGaAs / GaAs / InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltage V S and increases the switching current I S in the GaAs / InGaP HSOS characteristics. But in the AlGaAs / GaAs / InAlGaP HSOS, the V S and I S present contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

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7

Lyashenko, V., V. Zozulia, O. Yula, V. Mazur, and V. Strelbitskyi. "GROUND of COMPOSITION AND TAKTIKO-TEKHNICHNIKH DESCRIPTIONS of PERSPECTIVE MOBILE OPTICAL-ELECTRONIC COMPLEX of TRAJECTORY MEASURINGS." Наукові праці Державного науково-дослідного інституту випробувань і сертифікації озброєння та військової техніки, no. 4 (August 19, 2020): 63–74. http://dx.doi.org/10.37701/dndivsovt.4.2020.08.

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For some time past the careful attention of researches requires the issues of analyzing qualities of test objects and compliance actually received tactical and technical characteristics with specified operational requirements, it is necessary to get the parameters of high-precision trajectory measurements that will enable comparison (deviation) of the real trajectory from the reference trajectory (pattern trajectory); evaluate the operating benefit of the test objects; identify the causes of nonconformities of tactical and technical characteristics to requirements, which can be detected. Today for measuring the trajectory parameters of the test objects using equipment, which operates on different physical principles. It refers also to the electro-optics equipment, in which implemented process of target tracking for the purpose of obtaining on a real time basis initial information, further processing which will allow to calculate highly precise trajectory parameters of test objects. Therefore, the purpose of the article was a justification for composition and tactical and technical characteristics of prospective mobile optoelectronic complex of trajectory measurements. On the basis of the modern analysis of the objects of ground tests, their main characteristics, as well as the tactical and technical characteristics of modern mobile optoelectronic complex of trajectory measurements of domestic and foreign production and taking into account the “General requirements for mobile optoelectronic station of externally - trajectory measurements” from 01 October 2017, the project of composition and the tactical and technical characteristics prospective mobile optoelectronic complex of trajectory measurements was justified. Research design - the theory of probability, system analysis and synthesis of organizational-technical systems, theory efficiency and optimization, simulation of complex technical systems. The main results, obtained in the work: - composition and the tactical and technical characteristics prospective mobile optoelectronic complex of trajectory measurements were justified; - general requirements to the mobile optoelectronic complex of trajectory measurements were developed; The practical importance lies in the possibility of creating mobile optoelectronic complex of trajectory measurements of domestic production to conduct testing of new and modernized specimens of weapons and military equipment. The study is novel in that it: general requirements to the mobile optoelectronic complex of trajectory measurements were developed; the project of terms of reference for the creation of a mobile optoelectronic complex of trajectory measurements of domestic production was worked out to provide testing of specimens of weapons and military equipment.

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8

Kondrotas, Rokas, Remigijus Juškėnas, Arūnas Krotkus, Vidas Pakštas, Artūras Suchodolskis, Algirdas Mekys, Marius Franckevičius, et al. "Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3." Open Research Europe 2 (December 13, 2022): 138. http://dx.doi.org/10.12688/openreseurope.15168.1.

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Background: The development of organic/inorganic metal halide perovskites has seen unprecedent growth since their first recognition for applications in optoelectronic devices. However, their thermodynamic stability and toxicity remains a challenge considering wide-scale deployment in the future. This spurred an interest in search of perovskite-inspired materials which are expected to retain the advantageous material characteristics of halide perovskites, but with high thermodynamic stability and composed of earth-abundant and low toxicity elements. ABX3 chalcogenides (A, B=metals, X=Se, S) have been identified as potential class of materials meeting the aforementioned criteria. Methods: In this work, we focus on studying tin zirconium selenide (SnZrSe3) relevant physical properties with an aim to evaluate its prospects for application in optoelectronics. SnZrSe3 powder and monocrystals were synthesized via solid state reaction in 600 – 750 °C temperature range. Crystalline structure was determined using single crystal and powder X-ray diffraction methods. The bandgap was estimated from diffused reflectance measurements on powder samples and electrical properties of crystals were analysed from temperature dependent I-V measurements. Results: We found that SnZrSe3 crystals have a needle-like structure (space group – Pnma) with following unit cell parameters: a=9.5862(4) Å, b=3.84427(10) Å, c=14.3959(5) Å. The origin of the low symmetry crystalline structure was associated with stereochemical active electron lone pair of Sn cation. Estimated bandgap was around 1.15 eV which was higher than measured previously and predicted theoretically. Additionally, it was found that resistivity and conductivity type depended on the compound chemical composition. Conclusions: Absorption edge in the infrared region and bipolar dopability makes SnZrSe3 an interesting material candidate for application in earth-abundant and non-toxic single/multi-junction solar cells or other infrared based optoelectronic devices.

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9

Kumar, Amit, Roberto Baccoli, Antonella Fais, Alberto Cincotti, Luca Pilia, and Gianluca Gatto. "Substitution Effects on the Optoelectronic Properties of Coumarin Derivatives." Applied Sciences 10, no. 1 (December 23, 2019): 144. http://dx.doi.org/10.3390/app10010144.

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Coumarin derivatives have gathered major attention largely due to their versatile utility in a wide range of applications. In this framework, we report a comparative computational investigation on the optoelectronic properties of 3-phenylcoumarin and 3-heteroarylcoumarin derivatives established as enzyme inhibitors. Specifically, we concentrate on the variation in the optoelectronic characteristics for the hydroxyl group substitutions within the coumarin moiety. In order to realize our aims, all-electron density functional theory and time dependent density functional theory calculations were performed with a localized Gaussian basis-set matched with a hybrid exchange–correlation functionals. Molecular properties such as highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energies, vertical ionization (IEV) and electron affinity energies, absorption spectra, quasi-particle gap, and exciton binding energy values are examined. Furthermore, the influence of solvent on the optical properties of the molecules is considered. We found a good agreement between the experimental (8.72 eV) and calculated (8.71 eV) IEV energy values for coumarin. The computed exciton binding energy of the investigated molecules indicated their potential optoelectronics application.

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Kremenetskaya, Y. A., S. E. Markov, and Yu V. Melnyk. "Structural optimization of optoelectronic components in millimeter-wave radio-transmitting modules." Semiconductor Physics, Quantum Electronics and Optoelectronics 23, no. 04 (November 19, 2020): 424–30. http://dx.doi.org/10.15407/spqeo23.04.424.

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The paper analyzes the effect of structure inherent to optoelectronic radio-transmitting modules of a phased array antenna (PAA) on the noise characteristics in the millimeter range (MMR) of waves. Considered are promising structures of MMR modules for generating radiation with a phased array for communication systems based on optoelectronic technologies. The promising types of photodiodes that are used to form MMR radio signals as well as the distance and physical limitations for photodetectors associated with a limited bandwidth and nonlinear response characteristics have been analyzed. Mathematical modeling of the oscillation of the output current after the optoelectronic conversion of the signal and noise characteristics of the radio-transmitting modules capable to form MMR radiation in PAA has been carried out. The analysis of the nonlinearity of the sensitivity of photodiodes in the high-frequency regions of formation of radio signals has been carried out. The necessity to structurally optimize optoelectronic components in the MMR transmission module has been shown depending on the noise characteristics of the output signal. It has been shown that fundamental studies of nonlinear characteristics and factors limiting the band of photodetectors are important tasks for further developing MMR telecommunications of the next generations.

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11

Zieleźnicki, Jan, Adam Grzybowski, and Janusz Błaszczyk. "Comparison Of Selected Characteristics Of Brushless DC Motors For Optoelectronic Sensors Positioning." Research Works of Air Force Institute of Technology 36, no. 1 (August 1, 2015): 159–70. http://dx.doi.org/10.1515/afit-2015-0022.

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Abstract Thanks to their advantageous properties such as higher durability, reliability and wide scope of speed achievable with a given load, brushless DC motors are often used in Line-of-Sight stabilization systems of the optoelectronic aircraft gimbals. Since there are many sub-types and configurations of such motors, choosing the optimal structure is not a trivial issue. This paper presents the selection process of a motor with properties that would make it ideal for use in an optoelectronic gimbal drive.

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12

Markina, O. M., and M. O. Tykhan. "Research of illuminating parameters halogen-filled and LED lamp for optoelectronic measuring system." Archives of Materials Science and Engineering 1, no. 94 (November 1, 2018): 18–26. http://dx.doi.org/10.5604/01.3001.0012.7804.

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Purpose: The purpose of this paper is to study and compare the light and technical characteristics of halogen and LED-lamps and to determine the effect of lighting quality on the accuracy of the measurement of the optoelectronic control system for the micrometer sizes of the prescription objects. Design/methodology/approach: The research approach is determined by the analysis and comparison of the lighting characteristics of lamps manufactured for mass production and the detection of the possibility of using these sources for optoelectronic measuring systems for the micrometric range. Lighting characteristics were investigated by the goniophotometric method and the method of the integration sphere. Findings: During the analysis of the results of experimental studies, a discrepancy in the lighting characteristics of the lamps was found compared to those indicated by the manufacturers. This difference in the indicators of the lighting characteristics was: for the light flux 2.92% halogen lamp (13.4% LED); correlated colour temperature by 0.7% halogen lamp (1.6% LED); for current – 7.34% halogen lamp (8.7% LED); for power – 7.31% halogen lamp (7.54% LED). The accuracy of measuring the size with a halogen lamp is 20 ± 0.96 μm, and with LED – 20 ± 0.23 μm. Research limitations/implications: The result of comparing the accuracy of the measurement for the optoelectronic measuring system of the geometric dimensions is the measure of absolute contrast with the use of LED lighting is four times better than halogen. Practical implications: Using the results of the study of the light characteristics of lamps described in the article, it is possible to improve any optoelectronic measuring system. Originality/value: The originality of the results of the article is the experimental data of the lighting characteristics studies of the lamps used in the optoelectronic measuring system.

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13

Wang, Lin, Wenyan Wang, Quan Wang, Xiaochun Chi, Zhihui Kang, Qiang Zhou, Lingyun Pan, Hanzhuang Zhang, and Yinghui Wang. "Study on photoelectric characteristics of monolayer WS2 films." RSC Advances 9, no. 64 (2019): 37195–200. http://dx.doi.org/10.1039/c9ra07924f.

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It is important to determine the time-dependent evolution of the excited monolayer WS₂, which will provide a basis for the reasonable design of optoelectronic devices based on two-dimensional transition metal dichalcogenides.

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14

Rhee, Seunghyun, Kunsik An, and Kyung-Tae Kang. "Recent Advances and Challenges in Halide Perovskite Crystals in Optoelectronic Devices from Solar Cells to Other Applications." Crystals 11, no. 1 (December 31, 2020): 39. http://dx.doi.org/10.3390/cryst11010039.

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Organic-inorganic hybrid perovskite materials have attracted tremendous attention as a key material in various optoelectronic devices. Distinctive optoelectronic properties, such as a tunable energy band position, long carrier diffusion lengths, and high charge carrier mobility, have allowed rapid progress in various perovskite-based optoelectronic devices (solar cells, photodetectors, light emitting diodes (LEDs), and lasers). Interestingly, the developments of each field are based on different characteristics of perovskite materials which are suitable for their own applications. In this review, we provide the fundamental properties of perovskite materials and categorize the usages in various optoelectronic applications. In addition, the prerequisite factors for those applications are suggested to understand the recent progress of perovskite-based optoelectronic devices and the challenges that need to be solved for commercialization.

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15

Kim, Kyung-Hwan, Ki-Hyun Keem, Jeong-Min Kang, Chang-Joon Yoon, Dong-Young Jeong, Byung-Don Min, Kyoung-Ah Cho, Hyun-Suk Kim, and Sang-Sig Kim. "Synthesis and Optoelectronic Characteristics of Single-crystalline Si Nanowires." Transactions on Electrical and Electronic Materials 6, no. 5 (October 1, 2005): 198–201. http://dx.doi.org/10.4313/teem.2005.6.5.198.

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16

Luo, Lin-bao, Feng-xia Liang, and Jian-sheng Jie. "Sn-catalyzed synthesis of SnO2nanowires and their optoelectronic characteristics." Nanotechnology 22, no. 48 (November 4, 2011): 485701. http://dx.doi.org/10.1088/0957-4484/22/48/485701.

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17

Mathews, Nripan, Binni Varghese, Cheng Sun, Velmurugan Thavasi, Björn P. Andreasson, Chornghaur H. Sow, Seeram Ramakrishna, and Subodh G. Mhaisalkar. "Oxide nanowire networks and their electronic and optoelectronic characteristics." Nanoscale 2, no. 10 (2010): 1984. http://dx.doi.org/10.1039/c0nr00285b.

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18

Hamaguchi, H., M. Makiuchi, and O. Wada. "High-speed response characteristics of GaAs optoelectronic integrated receivers." Electronics Letters 22, no. 9 (1986): 501. http://dx.doi.org/10.1049/el:19860340.

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19

Eladl, Sh M. "Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices." Semiconductor physics, quantum electronics and optoelectronics 12, no. 3 (May 15, 2009): 260–63. http://dx.doi.org/10.15407/spqeo12.03.260.

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20

Ndabakuranye, Jean Pierre, Hyeonju Lee, Idrissa Kayijuka, Sungkeun Baang, and Jaehoon Park. "Optoelectronic Characteristics of rr-P3HT:PC61BM-based Organic Solar Cells." Sensors and Materials 32, no. 7 (July 20, 2020): 2399. http://dx.doi.org/10.18494/sam.2020.2807.

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21

Shen, Yuan-Chu, Chun-Yi Tung, Chiung-Yi Huang, Yu-Chang Lin, Yan-Gu Lin, and Ray-Hua Horng. "Study on Optoelectronic Characteristics of ZnGa2O4 Thin-Film Phototransistors." ACS Applied Electronic Materials 1, no. 5 (May 3, 2019): 783–88. http://dx.doi.org/10.1021/acsaelm.9b00128.

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22

Yin, Xiaodong, Kanglei Liu, Yi Ren, Roger A. Lalancette, Yueh-Lin Loo, and Frieder Jäkle. "Pyridalthiadiazole acceptor-functionalized triarylboranes with multi-responsive optoelectronic characteristics." Chemical Science 8, no. 8 (2017): 5497–505. http://dx.doi.org/10.1039/c6sc03097a.

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The functionalization of triarylboranes with pyridalthiadiazole (PT) acceptor moieties gives Ar₂B–π–PT dyads and PT–π–B(Ar)–π–PT triads with low-lying PT-centered LUMO orbitals. Addition of a fluoride source results in competing anion binding to boron and PT reduction, depending on the steric and electronic structure of the B-aryl group.

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23

Borders, Bryan, Morteza Adinehnia, Bhaskar Chilukuri, Michael Ruf, K. W. Hipps, and Ursula Mazur. "Tuning the optoelectronic characteristics of ionic organic crystalline assemblies." Journal of Materials Chemistry C 6, no. 15 (2018): 4041–56. http://dx.doi.org/10.1039/c8tc00416a.

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24

Rostami, A., H. Rasooli Saghai, H. Baghban, N. Sadoogi, and Y. Seyfinejad. "Capping-Barrier Layer Effect on Quantum Dot Optoelectronic Characteristics." Chinese Physics Letters 27, no. 10 (October 2010): 104208. http://dx.doi.org/10.1088/0256-307x/27/10/104208.

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25

Porada, Z., and E. Schabowska-Osiowska. "Dynamic Characteristics of a Thin Film Optoelectronic Memory System." Active and Passive Electronic Components 19, no. 2 (1996): 111–17. http://dx.doi.org/10.1155/1996/68903.

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26

Matsui, Yu-ichi, and Yoshio Miyoshi. "Difference-of-Gaussian-Like Characteristics for Optoelectronic Visual Sensor." IEEE Sensors Journal 7, no. 10 (October 2007): 1447–52. http://dx.doi.org/10.1109/jsen.2007.905040.

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27

Al-Shawabkeh, Ali F. "Optoelectronic investigation and spectroscopic characteristics of polyamide-66 polymer." e-Polymers 22, no. 1 (January 1, 2022): 858–69. http://dx.doi.org/10.1515/epoly-2022-0078.

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Abstract A semi-crystalline designated nylon 66 polymer is a crucial, high-performance engineering material that is used in wide variety of industrial applications including sensors, electrical insulators, electronic devices, and automotive sector. Using modules based on density functional theory and finite-field approaches, this work explores the optoelectronic and spectroscopic characteristics of this polymer. Absorption, dielectric function, refractive index, and optical conductivity are the principle topics of this study. The effects indicated that nylon 66 is a first-rate insulator and the degree of crystallinity estimated is 46.44%. The simulated bandgap vs. the Tauc relation value is greater than 7.0 eV and has a proportional inaccuracy of 2.36%. Absorption coefficient value, however, suggests that while the refractive index and dielectric function remain stable, the optical conductivity is elevated. In order to determine the advantages appropriate for many applications, this research develops a strong basis and perception of the linear and nonlinear optical properties of nylon 66.

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28

Li, Yi Bing, Zhi Wei Zhang, and Jun Guo. "PLM Oriented Quality Information Model and Management System for Optoelectronic Product." Advanced Materials Research 889-890 (February 2014): 1467–70. http://dx.doi.org/10.4028/www.scientific.net/amr.889-890.1467.

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Optoelectronic industry is one of the pillar cornerstone industries in the 21st century. For China optoelectronic enterprises, how to participate in the global competition by means of the world-class quality has become the survival or perish subject. Based on the analysis of optoelectronic products and its quality management characteristics, this paper proposed the product lifecycle quality management model which is customer demands-driven and six sigma process control targeted by emphasizing the process control based on fact and data. This paper suggested and illustrated the prototype system of optoelectronic product lifecycle quality management combined with the actual quality management for demonstrating the feasibility of model.

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29

Matbabayev, M. "The Optoelectronic Sensor Relative Humidity." Bulletin of Science and Practice 6, no. 10 (October 15, 2020): 244–52. http://dx.doi.org/10.33619/2414-2948/59/24.

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This paper discusses the main characteristics of atmospheric air, the selected closed object on which the relative humidity depends to a certain extent, as well as a laboratory installation for studying the principle of constructing an optoelectronic sensor for measuring relative humidity. A description and diagram of the air humidity sensor, a block diagram of the installation for continuous monitoring of air humidity in the controlled object, a device for calibrating humidity sensors, and an algorithm for calibrating humidity sensors are given.

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Uddin, Noor, Qing Yang, Guangqing Du, Feng Chen, Huijing Li, and Xun Hou. "Active tuning of hybrid plasmonics in graphene-covered metallic nanotrench-=SUP=-*-=/SUP=-." Письма в журнал технической физики 46, no. 11 (2020): 14. http://dx.doi.org/10.21883/pjtf.2020.11.49491.18121.

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Abstract Graphene has recently emerged as a possible platform for integrated optoelectronics and hybrid photonic devices because of its promising electronic and optical characteristics. Here, we propose the active tuning of hybrid plasmonics in intrinsic graphene-based gold rectangle nanotrench by modifying the graphene electron system. We found that the plasmonics response in graphene thicknesses can be unprecedentedly tuned by altering the thickness of thick graphene covering nanotrench geometry. It is explained as the active plasmonics hybridization leading to the tunability of the enhanced e -field localized within the graphene-covered metallic nanotrench. This study can be useful for optoelectronic devices based on hybrid graphene structures at IR wavelengths.

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Khasanov, Zimfir, Vasikh Yasoveev, Oleg Khasanov, and Alexandr Vishnevskiy. "Estimation of Dynamic Errors in Laser Optoelectronic Dimension Gauges for Geometric Measurement of Details." MATEC Web of Conferences 155 (2018): 01042. http://dx.doi.org/10.1051/matecconf/201815501042.

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The article reviews the capabilities and particularities of the approach to the improvement of metrological characteristics of fiber-optic pressure sensors (FOPS) based on estimation estimation of dynamic errors in laser optoelectronic dimension gauges for geometric measurement of details. It is shown that the proposed criteria render new methods for conjugation of optoelectronic converters in the dimension gauge for geometric measurements in order to reduce the speed and volume requirements for the Random Access Memory (RAM) of the video controller which process the signal. It is found that the lower relative error, the higher the interrogetion speed of the CCD array. It is shown that thus, the maximum achievable dynamic accuracy characteristics of the optoelectronic gauge are determined by the following conditions: the parameter stability of the electronic circuits in the CCD array and the microprocessor calculator; linearity of characteristics; error dynamics and noise in all electronic circuits of the CCD array and microprocessor calculator.

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32

Olimov, Lutfiddin Omanovich. "DETERMINATION OF EFFICIENT OPTICAL SOURCES OF AIR PROPAGATION FOR FISHERIES BIOPHYSICAL DEVICES." European International Journal of Multidisciplinary Research and Management Studies 02, no. 10 (October 1, 2022): 01–08. http://dx.doi.org/10.55640/eijmrms-02-10-01.

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From the analysis of the literature, it is known that agricultural pest control devices designed to combat insects or for fishing attract flying insects, the growth of functional systems of Fish and fish larvae in one norm plays an important role in the development of light rays of optical radiation sources. Instruments with incandescent lamp, fluorescent, halogen or light-emitting semiconductor optoelectronic irradiators are widely used as sources of optical radiation in this area. When creating agricultural devices from them, light-emitting semiconductor optoelectronic devices are considered to withstand competition with performance, energy efficiency and other physical characteristics. In connection with these, the research methods and results of the study on the distribution of semiconductor optoelectronic irradiators in the air and aqueous medium as well as the spectral characteristics are described in this work.

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Liu, Lei, WeiWei Jiang, and Bi He. "Analysis and Experimental Research on Dynamic Characteristics of Horizontal Shaft System of Photoelectric Equipment." Journal of Physics: Conference Series 2396, no. 1 (December 1, 2022): 012008. http://dx.doi.org/10.1088/1742-6596/2396/1/012008.

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Abstract In order to study the transmission characteristics of vibration in the shafting of optoelectronic equipment, a horizontal shafting test platform for optoelectronic equipment is designed. Firstly, according to the special structure and load conditions of the three-row ball-column combined turntable bearing used in the horizontal shafting, a quasi-static model of the bearing load was established to solve the load distribution of the bearing and further calculate the bearing stiffness. At the same time, the bearing system was established. The dynamic model of the system is used to calculate the frequency response function of the system under the conditions of radial load and axial load and analyze the vibration transmission characteristics of the shaft system. Based on the finite element method, a finite element calculation model is established, the shafting dynamic model established is used to simplify the bearing, the modal parameters of the equipment are analyzed, and the experimental verification is carried out using the Siemens dynamic test system. The results show that the established model is effective and reliable. It provides a reference for studying the dynamic characteristics of the shaft system of optoelectronic equipment.

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Bragina, Liudmyla, Dmitry Petrov, Nazar Kovalenko, and Sergiy Philonenko. "Study of the Performance Characteristics of Erbium-Containing Laser Glasses." Key Engineering Materials 788 (November 2018): 114–19. http://dx.doi.org/10.4028/www.scientific.net/kem.788.114.

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The present state of laser glasses production for optoelectronic systems and devices is considered. The limitations of existing laser glasses and the necessity to create new ones have been viewed. The urgency of the development and introduction of new types of laser glass for its use in both civilian and defense equipment sectors is shown. The technological complexity of the phosphate erbium glasses production is substantiated. The purpose of the work is to create laser glasses and make a laser element, will be operating wavelength of 1.54 μm. Optimum concentration of rare earth oxides in laser glasses has been determined. The quality control methodology and technology of laser glasses were developed. The production of a new laser glass makes it possible to use it in modern optoelectronic systems. The laser elements were fabricated and their generation characteristics were investigated. The results of the laser elements industrial testing are presented.

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35

Simić, Biljana, Dejan Nikolić, Koviljka Stanković, Ljubinko Timotijević, and Srboljub Stanković. "Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/582819.

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This study investigates the effects of neutron radiation onI-Vcharacteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

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36

Kozłowski, Grzeegorz. "COMPETENCE OF LABORATORY FOR TESTING OPTOELECTRONIC SYSTEMS IN MILITARY INSTITUTE OF ARMAMENT TECHNOLOGY." PROBLEMY TECHNIKI UZBROJENIA 157, no. 2 (November 10, 2021): 37–58. http://dx.doi.org/10.5604/01.3001.0015.5046.

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The paper presents competences of the Military Institute of Armament Technology Laboratory for Testing Optoelectronic Systems used to acquisition and handling the optoelectronic systems. The selection of optoelec-tronic equipment and its performance used by the Polish Armed Forces is specified. Technological competences including the testing equipment used to verify and evaluate the characteristics of nightvision and thermovision systems are presented, as well.

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Svishcho, Vitaliy S. "Methodology for Estimating the Probability of Obtaining Data About an Object Using Optoelectronic Systems of Unmanned Aerial Vehicles." Journal of Siberian Federal University. Engineering & Technologies 14, no. 7 (November 2021): 803–11. http://dx.doi.org/10.17516/1999-494x-0357.

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The article presents a method for estimating the probability of obtaining data about an object using optoelectronic means of unmanned aerial vehicles. The optimal heights of the use of unmanned aerial vehicles depending on weather conditions are considered. Numerical estimates of the dependence of the characteristics of optoelectronic devices on the factors affecting their use are obtained. The actual period of the use of unmanned aerial vehicles to increase the probability of obtaining data about the object is determined. Graphs of the use of optoelectronic devices of different wavelength ranges, taking into account the time interval, are constructed

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Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, and Lou Zhi-Dong. "Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors." Acta Physica Sinica 58, no. 5 (2009): 3427. http://dx.doi.org/10.7498/aps.58.3427.

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Komarala, Eswaravara Prasadarao, Karthikeyan Mariyappan, Suyoun Park, and Sung Ha Park. "DNA foams constructed by freeze drying and their optoelectronic characteristics." Colloids and Surfaces B: Biointerfaces 217 (September 2022): 112648. http://dx.doi.org/10.1016/j.colsurfb.2022.112648.

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Ilanchezhiyan, P., C. Siva, A. Madhan Kumar, Fu Xiao, G. Mohan Kumar, and T. W. Kang. "Optoelectronic characteristics of chemically processed ultra-thin InyZn1−yO nanostructures." CrystEngComm 18, no. 18 (2016): 3204–10. http://dx.doi.org/10.1039/c6ce00558f.

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Hamaguchi, H., M. Makiuchi, T. Kumai, and O. Wada. "GaAs optoelectronic integrated receiver with high-output fast-response characteristics." IEEE Electron Device Letters 8, no. 1 (January 1987): 39–41. http://dx.doi.org/10.1109/edl.1987.26543.

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Zheng, Lü, Chen Zhi-Ming, and Pu Hong-Bin. "SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics." Chinese Physics 14, no. 6 (May 3, 2005): 1255–58. http://dx.doi.org/10.1088/1009-1963/14/6/035.

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Al-Sagheer, Fakhreia, Ali Bumajdad, Metwally Madkour, and Basma Ghazal. "Optoelectronic Characteristics of ZnS Quantum Dots: Simulation and Experimental Investigations." Science of Advanced Materials 7, no. 11 (November 1, 2015): 2352–60. http://dx.doi.org/10.1166/sam.2015.2385.

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Kamimura, H., C. J. Dalmaschio, S. C. Carrocine, A. D. Rodrigues, R. C. Gouveia, E. R. Leite, and A. J. Chiquito. "Optoelectronic characteristics of single InP nanowire grown from solid source." Materials Research Express 2, no. 4 (April 14, 2015): 045012. http://dx.doi.org/10.1088/2053-1591/2/4/045012.

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Azadeh, M., R. B. Darling, and W. R. Babbitt. "Characteristics of optoelectronic feedback for smart pixels with smart illumination." IEEE Journal of Selected Topics in Quantum Electronics 5, no. 2 (1999): 172–77. http://dx.doi.org/10.1109/2944.778277.

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Surabhi, R., A. Batra, K. Bhat, A. Chilvery, S. Uba, B. Bohara, and A. Alomari. "Growth and characteristics of perovskite CH3NH3PbBr3 crystal for optoelectronic applications." Ferroelectrics 533, no. 1 (September 10, 2018): 72–81. http://dx.doi.org/10.1080/00150193.2018.1470842.

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Dostanko, A. P., and A. V. Tishkevich. "Correction of the calibrating characteristics of optoelectronic temperature measurement systems." Measurement Techniques 33, no. 9 (September 1990): 923–26. http://dx.doi.org/10.1007/bf00976570.

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Zanatta, A. R., C. T. M. Ribeiro, and U. Jahn. "Optoelectronic and structural characteristics of Er-doped amorphous AlN films." Journal of Applied Physics 98, no. 9 (November 2005): 093514. http://dx.doi.org/10.1063/1.2127120.

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Huang, Yidong, Kaiyu Cui, Fang Liu, Xue Feng, and Wei Zhang. "Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures." Frontiers of Optoelectronics 9, no. 2 (March 29, 2016): 151–59. http://dx.doi.org/10.1007/s12200-016-0615-2.

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Porada, Z., and E. Schabowska-Osiowska. "Dynamic Characteristics of a Thin Film Optoelectronic Voltage-Current Convertor." Active and Passive Electronic Components 16, no. 1 (1993): 29–34. http://dx.doi.org/10.1155/1993/79097.

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