Relevant bibliographies by topics / Optoelectronic characteristics

Academic literature on the topic 'Optoelectronic characteristics'

Author: Grafiati
Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Optoelectronic characteristics"

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Xie, De-Hua, Fei-Fei Wang, Hao Lü, Min-Yong Du, and Wen-Jie Xu. "Optoelectronic characteristics of CuO nanorods." Chinese Physics B 22, no. 5 (May 2013): 058103. http://dx.doi.org/10.1088/1674-1056/22/5/058103.

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Sakata, H., Y. Nagao, and Y. Matsushima. "Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch (S-TOPS)." Journal of Optics A: Pure and Applied Optics 1, no. 4 (January 1, 1999): 435–37. http://dx.doi.org/10.1088/1464-4258/1/4/302.

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Li, Q. H., T. Gao, and T. H. Wang. "Optoelectronic characteristics of single CdS nanobelts." Applied Physics Letters 86, no. 19 (May 9, 2005): 193109. http://dx.doi.org/10.1063/1.1923186.

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Wang, Feifei, Chong Wang, Jiannong Chen, and Yongjiang Yu. "Optoelectronic characteristics of single ZnAlO nanotetrapod." Materials Letters 66, no. 1 (January 2012): 270–72. http://dx.doi.org/10.1016/j.matlet.2011.08.070.

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Wu, Jing, Yunshan Zhao, Minglei Sun, Minrui Zheng, Gang Zhang, Xinke Liu, and Dongzhi Chi. "Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering." Nanophotonics 9, no. 8 (February 21, 2020): 2467–74. http://dx.doi.org/10.1515/nanoph-2019-0542.

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AbstractRecently, layered two-dimensional (2D) palladium diselenide (PdSe2), with a unique low- symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herein, we studied the optoelectronics transport characteristics of high-quality PdSe2-based photodetectors with different thicknesses. We demonstrated an enhancement of PdSe2 photodetector performance owing to the band engineering via a thickness reduction. The highest responsivity of 5.35 A/W can be achieved with an external quantum efficiency of 1250% at the wavelength of 532 nm. We attribute such high performance in photoresponsivity to the high valley convergence in the conduction band of layered PdSe2, in agreement with first-principles calculation. Our results offer new insight into the layer-dependent optoelectronic properties of PdSe2 and open new avenues in engineering next-generation 2D-based electronics and optoelectronics.
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GUO, DER-FENG, JUNG-HUI TSAI, TZU-YEN WENG, CHIH-HUNG YENG, PO-HSIEN LAI, SSU-YI FU, CHING-WEN HUNG, and WEN-CHAU LIU. "INVESTIGATION ON HETEROSTRUCTURAL OPTOELECTRONIC SWITCHES." Surface Review and Letters 15, no. 01n02 (February 2008): 139–44. http://dx.doi.org/10.1142/s0218625x08011123.

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GaAs / InGaP and AlGaAs / GaAs / InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltage V S and increases the switching current I S in the GaAs / InGaP HSOS characteristics. But in the AlGaAs / GaAs / InAlGaP HSOS, the V S and I S present contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.
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Lyashenko, V., V. Zozulia, O. Yula, V. Mazur, and V. Strelbitskyi. "GROUND of COMPOSITION AND TAKTIKO-TEKHNICHNIKH DESCRIPTIONS of PERSPECTIVE MOBILE OPTICAL-ELECTRONIC COMPLEX of TRAJECTORY MEASURINGS." Наукові праці Державного науково-дослідного інституту випробувань і сертифікації озброєння та військової техніки, no. 4 (August 19, 2020): 63–74. http://dx.doi.org/10.37701/dndivsovt.4.2020.08.

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For some time past the careful attention of researches requires the issues of analyzing qualities of test objects and compliance actually received tactical and technical characteristics with specified operational requirements, it is necessary to get the parameters of high-precision trajectory measurements that will enable comparison (deviation) of the real trajectory from the reference trajectory (pattern trajectory); evaluate the operating benefit of the test objects; identify the causes of nonconformities of tactical and technical characteristics to requirements, which can be detected. Today for measuring the trajectory parameters of the test objects using equipment, which operates on different physical principles. It refers also to the electro-optics equipment, in which implemented process of target tracking for the purpose of obtaining on a real time basis initial information, further processing which will allow to calculate highly precise trajectory parameters of test objects. Therefore, the purpose of the article was a justification for composition and tactical and technical characteristics of prospective mobile optoelectronic complex of trajectory measurements. On the basis of the modern analysis of the objects of ground tests, their main characteristics, as well as the tactical and technical characteristics of modern mobile optoelectronic complex of trajectory measurements of domestic and foreign production and taking into account the “General requirements for mobile optoelectronic station of externally - trajectory measurements” from 01 October 2017, the project of composition and the tactical and technical characteristics prospective mobile optoelectronic complex of trajectory measurements was justified. Research design - the theory of probability, system analysis and synthesis of organizational-technical systems, theory efficiency and optimization, simulation of complex technical systems. The main results, obtained in the work: - composition and the tactical and technical characteristics prospective mobile optoelectronic complex of trajectory measurements were justified; - general requirements to the mobile optoelectronic complex of trajectory measurements were developed; The practical importance lies in the possibility of creating mobile optoelectronic complex of trajectory measurements of domestic production to conduct testing of new and modernized specimens of weapons and military equipment. The study is novel in that it: general requirements to the mobile optoelectronic complex of trajectory measurements were developed; the project of terms of reference for the creation of a mobile optoelectronic complex of trajectory measurements of domestic production was worked out to provide testing of specimens of weapons and military equipment.
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Kondrotas, Rokas, Remigijus Juškėnas, Arūnas Krotkus, Vidas Pakštas, Artūras Suchodolskis, Algirdas Mekys, Marius Franckevičius, et al. "Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3." Open Research Europe 2 (December 13, 2022): 138. http://dx.doi.org/10.12688/openreseurope.15168.1.

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Background: The development of organic/inorganic metal halide perovskites has seen unprecedent growth since their first recognition for applications in optoelectronic devices. However, their thermodynamic stability and toxicity remains a challenge considering wide-scale deployment in the future. This spurred an interest in search of perovskite-inspired materials which are expected to retain the advantageous material characteristics of halide perovskites, but with high thermodynamic stability and composed of earth-abundant and low toxicity elements. ABX3 chalcogenides (A, B=metals, X=Se, S) have been identified as potential class of materials meeting the aforementioned criteria. Methods: In this work, we focus on studying tin zirconium selenide (SnZrSe3) relevant physical properties with an aim to evaluate its prospects for application in optoelectronics. SnZrSe3 powder and monocrystals were synthesized via solid state reaction in 600 – 750 °C temperature range. Crystalline structure was determined using single crystal and powder X-ray diffraction methods. The bandgap was estimated from diffused reflectance measurements on powder samples and electrical properties of crystals were analysed from temperature dependent I-V measurements. Results: We found that SnZrSe3 crystals have a needle-like structure (space group – Pnma) with following unit cell parameters: a=9.5862(4) Å, b=3.84427(10) Å, c=14.3959(5) Å. The origin of the low symmetry crystalline structure was associated with stereochemical active electron lone pair of Sn cation. Estimated bandgap was around 1.15 eV which was higher than measured previously and predicted theoretically. Additionally, it was found that resistivity and conductivity type depended on the compound chemical composition. Conclusions: Absorption edge in the infrared region and bipolar dopability makes SnZrSe3 an interesting material candidate for application in earth-abundant and non-toxic single/multi-junction solar cells or other infrared based optoelectronic devices.
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Kumar, Amit, Roberto Baccoli, Antonella Fais, Alberto Cincotti, Luca Pilia, and Gianluca Gatto. "Substitution Effects on the Optoelectronic Properties of Coumarin Derivatives." Applied Sciences 10, no. 1 (December 23, 2019): 144. http://dx.doi.org/10.3390/app10010144.

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Coumarin derivatives have gathered major attention largely due to their versatile utility in a wide range of applications. In this framework, we report a comparative computational investigation on the optoelectronic properties of 3-phenylcoumarin and 3-heteroarylcoumarin derivatives established as enzyme inhibitors. Specifically, we concentrate on the variation in the optoelectronic characteristics for the hydroxyl group substitutions within the coumarin moiety. In order to realize our aims, all-electron density functional theory and time dependent density functional theory calculations were performed with a localized Gaussian basis-set matched with a hybrid exchange–correlation functionals. Molecular properties such as highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energies, vertical ionization (IEV) and electron affinity energies, absorption spectra, quasi-particle gap, and exciton binding energy values are examined. Furthermore, the influence of solvent on the optical properties of the molecules is considered. We found a good agreement between the experimental (8.72 eV) and calculated (8.71 eV) IEV energy values for coumarin. The computed exciton binding energy of the investigated molecules indicated their potential optoelectronics application.
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Kremenetskaya, Y. A., S. E. Markov, and Yu V. Melnyk. "Structural optimization of optoelectronic components in millimeter-wave radio-transmitting modules." Semiconductor Physics, Quantum Electronics and Optoelectronics 23, no. 04 (November 19, 2020): 424–30. http://dx.doi.org/10.15407/spqeo23.04.424.

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The paper analyzes the effect of structure inherent to optoelectronic radio-transmitting modules of a phased array antenna (PAA) on the noise characteristics in the millimeter range (MMR) of waves. Considered are promising structures of MMR modules for generating radiation with a phased array for communication systems based on optoelectronic technologies. The promising types of photodiodes that are used to form MMR radio signals as well as the distance and physical limitations for photodetectors associated with a limited bandwidth and nonlinear response characteristics have been analyzed. Mathematical modeling of the oscillation of the output current after the optoelectronic conversion of the signal and noise characteristics of the radio-transmitting modules capable to form MMR radiation in PAA has been carried out. The analysis of the nonlinearity of the sensitivity of photodiodes in the high-frequency regions of formation of radio signals has been carried out. The necessity to structurally optimize optoelectronic components in the MMR transmission module has been shown depending on the noise characteristics of the output signal. It has been shown that fundamental studies of nonlinear characteristics and factors limiting the band of photodetectors are important tasks for further developing MMR telecommunications of the next generations.
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Dissertations / Theses on the topic "Optoelectronic characteristics"

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Dulal, Prabin. "Optoelectronic Characteristics of Indium Oxide Thin Films." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562680154150056.

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Royo, Romero Luis. "Optoelectronic Characteristics of Inorganic Nanocrystals and Their Solids." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1555422820907262.

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Драч, Юрій Олександрович. "Підвищення точності вимірювання геометричних розмірів мікрометричного діапазону шляхом вдосконалення вузла освітлення оптико-електронної системи." Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/38419.

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В даній магістерській дисертаційній роботі проведено аналітичне дослідження будови оптико-електронної вимірювальної системи, її складових вузлів та особливостей налаштування. З самої теми дисертації «Підвищення точності вимірювання геометричних розмірів мікрометричного діапазону шляхом вдосконалення вузла освітлення оптико-електронної системи» видно, що шляхом підвищення точності вимірювання геометричних розмірів у мікрометричному діапазону є вдосконалення джерела освітлення. Ми визначили основні відомі методи визначення світло-технічних характеристик джерел освітлення у другому розділі дисертації. В розділі нами проаналізовано методи «інтегруючої сфери» та «гоніофотометричний» для визначення світлового потоку освітлювальних систем з різним типом світлового розподілу. Звісно, ми розглядали методи світового досвіду визначення цих характеристик та вітчизняного досвіду, адже ми планували проведення експериментальних досліджень власного джерела випромінювання, що відповідало б світовому рівню. У третьому розділі ми навели приклади трьох джерел освітлення з зазначенням світлотехнічних характеристик. Ми зазначили спектральні характеристики для кожного джерела освітлення. У четвертому розділі ми навели матеріали, щодо побудови нами оптико- електронної вимірювальної системи. Свою вимірювальну систему для визначення геометричних розмірів мікрометричного діапазону, ми спроектували на базі оптичного мікроскопу, телевізійної камери, що закріплювалась до тіла оптичного мікроскопу з застосуванням перехідників (тубусів). Отримане, CCD матрицею телевізійної камери, випромінювання від об’єкту дослідження геометричних розмірів, надходило до персонального комп’ютеру з необхідним програмним забезпеченням, що дозволило нам за випромінюванням визначати розміри об’єкту або дефекту об’єкту. Хочемо зазначити, що програмне забезпечення ми в магістерській дисертації не розробляли, а користувались готовим програмним продуктом. Адже такого завдання перед нами не стояло. Більшість наших зусиль було спрямовано на дослідження джерела освітлення. Проте, хочемо зазначити, що після отриманих результатів щодо дослідження світло-технічних характеристик нового джерела освітлення, ми провели ряд вимірювань геометричних розмірів у мікрометричному діапазоні. Щоб порівняти точність вимірювання мікрометричних геометричних розмірів. Для цього ми проводили вимірювання на еталонному зразку лінійних геометричних розмірів ГОСТ 15114-78 Даний комплект мір використовують встановлення роздільної здатності телескопічних систем, кутові геометричні розміри ми не вимірювали. Хочемо зазначити, що ми обрали у якості нового джерела освітлення світлодіодну лампу та порівнювали отримані результати світлотехнічних характеристик з джерелом, що є стандартним (базовим) для моделі оптичного мікроскопу. Отже нами проведено ряд експериментальних досліджень світлотехнічних характеристик найпопулярнішого джерела освітлення - світлодіодної ламп. Аналіз результатів дослідження показав, що перед тим як застосовувати лампу масового виробництва виготовлену за будь-якою технологією у вимірювальній системі (оптико-електронна система) необхідно після спеціалізованого дослідження у центрах випробувань і діагностики надпровідникових джерел світла та освітлювальних систем. Адже зазначені світлотехнічні характеристики від виробників не відповідають тим, що визначено дослідним шляхом.
In this master's dissertation an analytical study of the structure of the optoelectronic measuring system, its components and features of the setting. From the topic of the dissertation "Improving the accuracy of measuring the geometric dimensions of the micrometric range by improving the lighting unit of the optoelectronic system" it is clear that by improving the accuracy of measuring geometric dimensions in the micrometric range is improving the light source. We have identified the main known methods for determining the lighting characteristics of light sources in the second section of the dissertation. In this section we analyze the methods of "integrating sphere" and "goniophometric" to determine the luminous flux of lighting systems with different types of light distribution. Of course, we considered the methods of world experience in determining these characteristics and domestic experience, because we planned to conduct experimental studies of our own radiation source, which would correspond to the world level. In the third section, we gave examples of three light sources with lighting characteristics. We noted the spectral characteristics for each light source. In the fourth section, we presented materials on the construction of our optoelectronic measuring system. We designed our measuring system to determine the geometric dimensions of the micrometric range on the basis of an optical microscope, a television camera, which was attached to the body of the optical microscope using adapters (tubes). The radiation received from the geometric dimensions object by the CCD matrix of the television camera was sent to a personal computer with the necessary software, which allowed us to determine the dimensions of the object or the defect of the object by the radiation. We would like to note that we did not develop the software in the master's dissertation, but used the finished software product. After all, we did not face such a task. Most of our efforts have been focused on researching the light source. However, we would like to note that after the results obtained on the study of lighting characteristics of the new light source, we conducted a series of measurements of geometric dimensions in the micrometric range. To compare the accuracy of measuring micrometric geometric dimensions. To do this, we performed measurements on a reference sample of linear geometric dimensions GOST 15114-78 This set of measures uses the establishment of the resolution of telescopic systems, we did not measure the angular geometric dimensions. We would like to note that we chose an LED lamp as a new light source and compared the obtained results of lighting characteristics with a source that is standard (basic) for the optical microscope model. Therefore, we conducted a number of experimental studies of the lighting characteristics of the most popular light source - LED lamps. Analysis of the results of the study showed that before using a mass-produced lamp made by any technology in a measuring system (optoelectronic system) it is necessary after a specialized study in the centers of testing and diagnostics of superconducting light sources and lighting systems. After all, these lighting characteristics from the manufacturers do not correspond to those determined experimentally. Although the characteristics of the LED lamp were not significantly different from the halogen lamp. The impact on the measurement accuracy of the optoelectronic measuring system of these light sources, we determined using a bar measure of absolute contrast and concluded that the efficiency of LED lighting is four times higher than halogen lighting when building a measuring system as described in dissertation.
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Al-Ramli, I. F. K. "Receiver structures and filter characteristics for M-ary optical communication systems." Thesis, University of Essex, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356042.

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Микитенко, Володимир Іванович. "Підвищення ефективності функціонування оптико-електронних систем спостереження з комплексуванням зображень." Thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/31476.

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Дисертаційну роботу присвячено вирішенню важливої наукової проблеми підвищення ефективності функціонування багатоканальних оптико-електронних систем спостереження з комплексуванням зображень шляхом створення методів узгодження характеристик основних блоків, механізму оцінювання ефективності функціонування систем і адаптивного вибору найкращого методу злиття зображень спектральних каналів, засобів експериментального визначення основних характеристик систем, що дозволяє покращити якість виконання поточної задачі спостереження оператором, підвищити максимальну дальність виявлення об’єктів в двоканальних системах до 12%, забезпечує збільшення динамічного діапазону вимірювання енергетичних характеристик до 2,5 разів.
The dissertation is devoted to solving the scientific problem of increasing performance of optoelectronic surveillance systems (OESS) with image fusion by creating scientific bases and applied methods of analysis, synthesis and adjustment of information channels on a uniform methodological basis. The methodological bases for improving the OESS power consumption with image fusion are scientifically substantiated. They include the methods of constructive harmonization of the OESS’s main units characteristics, the mechanism of the adaptive selection of the best method of spectral images merging, the means of experimental determination of the OESS main characteristics and allow increase performance of the system. By information fusion from different channels, one can dramatically improve the quality of background status (BS) information. There is still no unified OESS design technology to analyze and synthesize the entire information system, to formulate technical requirements for individual blocks of spectral channels and algorithms for image fusion, taking into account the context of the observer's current task and type of BS. A number of problems remain to be solved with regard to improve the OESS performance by forming the image in operator’s field of view, which content provides best solution to the current surveillance task. An «object - OESS with image fusion – operator» mathematical model has been created. It allows analyze and design the OESS within a linear model. The formula for mod-ulation transfer function of the “lens - detector” system of the aerospace OESS was obtained at arbitrary angles of view. It can be used to calculate the values of the lens pupil diameter, focal length of the lens and threshold irradiance of detector, which is required to achieve the given image contrast. Unified algorithm for estimation of spatial and energy properties of OESS spectral channels based on the targeting task performance (TTP) metric is offered. It allows to determine the main information channel in the OESS as the base for further fusion, as well as to coordinate the parameters of the input blocks of two-chan-nel OESS. The method of performance estimation of OESS with information fusion on the basis of a posteriori TTP metric is developed. The metric is determined numerically for the method of merging images on the resulting spatial spectrum of images. This method allows to investigate the features of the image fusion process and its visual perception by the operator. It allows you to calculate the probability of detection, recognition and identification of an object, which is observed by the OESS with image fusion. A new method of reconciling the basic parameters of monoblock collimator and telescopic sights for small arms is proposed. Two variants of monoblock collimator sights with improved aiming accuracy are offered. The sight of two optical parts with different refractive index, glued on the plane, provides a linear aperture of the original pupil of the sight 0.276, with parallax 3 mrad. A monoblock collimator sight of two optical parts with different refractive index, glued on a spherical surface, at the same linear aperture of the original pupil and mass provides parallax of 1.25 mrad. A scheme of a decentralized tele-scopic monoblock is proposed, in which at a mismatch of 3 mrad the magnification can reach 1.6 times compared to 1.4 times for an axisymmetric scheme. A new method for measuring OESS spectral channels basic energy characteristics has been developed. This method, compared to its analogues, increases the dynamic range up to 2.5 times with a high uniformity of the brightness field. For the first time, the efficiency of the image fusion strategy, which allows to increase the maximum detection range of objects in dual-channel OESS by up to 12%, was developed and experimentally validated. New methods of increasing the speed of information processing in multichannel OESS with image fusion are proposed. The first method uses the information map based on the low spatial resolution channel and the second method uses a digital coherent optical processor. The amount of computation in the first case can be reduced up to 2 times.
Диссертационная работа посвящена решению важной научной проблемы повышения эффективности функционирования многоканальных оптико-электронных систем наблюдения с комплексированием изображений путем создания методов согласования характеристик основных блоков, механизма оценки эффективности функционирования систем и адаптивного выбора наилучшего метода слияния изображений спектральных каналов, средств экспериментального определения основных характеристик систем, что позволяет улучшить качество выполнения текущей задачи наблюдения оператором, повысить максимальную дальность обнаружения объектов в двухканальных системах до 12%, обеспечивает увеличение динамического диапазона измерения энергетических характеристик до 2,5 раз.
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Haidar, Jihad. "Commande optoélectronique d'atténuateurs, de résonateurs et de filtres microondes réalises sur substrat silicium." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0094.

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La commande optique de dispositifs microondes, qui exploite l'injection optique des porteurs dans un semiconducteur, apporte de nombreux avantages vis-a-vis de l'electronique conventionnelle. La presente etude avait pour objectif d'etendre cette commande a des dispositifs, realisant des fonctions complexes, tels que les attenuateurs, resonateurs et filtres microondes. Les structures etudiees ont ete realisees sur du silicium en technologie ligne microruban. Nous avons exploite principalement la charge complexe induite entre le ruban et le plan de masse par illumination optique. Nous avons demontre que la lumiere cree principalement une charge resistive aux faibles puissances, mais qu'une composante reactive apparait aussi d'une maniere nette pour les puissances optiques elevees. L'effet resistif a ete mis en application dans la realisation d'un attenuateur microondes en technologie microruban, reglable par la simple commande optique. Nous avons demontre sur un premier prototype une plage d'attenuation superieure a 10db dans la bande c. Quant a l'effet reactif, nous avons introduit une commande supplementaire qui permet de le renforcer. Il s'agit de polariser le plasma photo-induit par une tension continue qui se superpose au signal hyperfrequences. Nous avons accorde la frequence de differents resonateurs par cette nouvelle double commande optoelectronique. Ces accords, sont, a notre connaissance, de loin les plus larges jamais reportes parmi les accords electriques. En effet, nous avons mesure des deplacements de la frequence de resonance de l'ordre de 30% en dessous de la frequence de resonance en l'absence d'illumination. L'etude est plutot de nature experimentale, mais des modeles theoriques simples ont ete developpes pour tenter d'expliquer les differents phenomenes nouveaux mis en evidence experimentalement. Nous avons reussi a etablir, d'une maniere satisfaisante en premiere approche, le lien entre les parametres physiques du semiconducteur d'une part et le schema equivalent du plasma photo-induit deduit de la reponse microondes du dispositif d'autre part
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LIU, CHIA-CHUAN, and 劉家權. "Optoelectronic Characteristics of Tin Sulfide-Graphene Optoelectronic Device by Chemical Bath Deposition." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/ay549e.

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碩士
國立中正大學
光機電整合工程研究所
107
Graphene has a very high carrier mobility and excellent conductivity. It’s very suitable for using as a photodetector. But its transmittance is too high and has poor absorption when it illuminated. The carrier is combined fast after illuminating and the reaction to light is extremely weak. Therefore, a semiconductor material is used to grow on graphene to increase its response to light. For semiconductor materials, tin sulfide will be used. Because tin sulfide has the advantages of stable nature, non-toxicity, low cost and rich content of crust, it has a very high absorption coefficient ( > 1E5) and a suitable energy gap of 1.3 eV. We use chemical bath deposition (CBD) method to deposit tin sulfide on graphene. Due to the high temperature and low pH value of the process environment, the graphene has poor properties. Try to stack two layers of graphene for experiment and Raman spectroscopy and Hall effect measured resistance, carrier mobility and carrier concentration of a layer of graphene and two layers of graphene were measured. In the experiment, it was found that the deposition of one hour, the characteristics of graphene is the best and the characteristics of the element are also excellent. The 405 nm laser, the light intensity is 60 mW, and the switching time is 10 seconds. The rise time, component defect density, responsivity and specific detectivity were 6436 ms, 0.41, 0.046 AW-1 and 5.87E7 Jones.
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Lee, Yu-Chin, and 李昱嶔. "Characteristics of P-type CuGaO2 Optoelectronic Semiconductor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83771986340068153857.

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碩士
亞洲大學
光電與通訊學系
103
In this study, we prepared CuGaO2 film by using sputtering method and the annealing under controlled nitrogen atmosphere, with the attempt to identify the structure and optoelectronic properties. During the Cu-Ga-O phase change, CuGa2O4 and CuO were the intermediate phases of the reaction for forming CuGaO2, the temperature of CuGaO2 formation is 750°C. CuGaO2 had its structure remaining steady at high temperature, and had its cross-section formed by stacked polygonal microstructure. With the increase of the annealing temperature, the CuGaO2 film had its surface roughness, average grain size and direct band gap increased. The CuGaO2 films had its surface roughness values of 5.70~7.31 nm. The average CuGaO2 grain sizes were 35.59~39.02 nm. When CuGaO2 films were annealed at 750, 800, 850, and 900°C, its direct band gaps were 3.45, 3.50, 3.64, and 3.65eV, respectively. CuGaO2 absorbed mainly the photons with short wavelengths. The CuGaO2 film exhibited transmittance of 68% at a wavelength of 800nm. The positive Hall coefficient proves that the CuGaO2 is a p-type semiconductor.
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Tsai, Chia-Ho, and 蔡佳和. "Optoelectronic Characteristics of GeSn/Ge quantum-well photodetectors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/xjvpmj.

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碩士
國立中正大學
機械工程系研究所
106
GeSn is an emerging group-IV semiconductor material. As the Sn concentration increases, the band gap decreases. When a certain Sn concentration is met, it becomes a direct-band-gap material. Therefore, the band gap of the material can be controlled by adjusting the Sn concentration. Moreover, with the CMOS technology, this study produced a silicon-based photoelectric component. Thus, the potential of GeSn in developing PICs is very high. In the modern world where the communication business is thriving, GeSn can be used to greatly increase information transmission capacity. This study aimed to explore the optoelectronic characteristics of GeSn/Ge quantum-well MSM photodetectors under different temperatures. This study used photolithography to produce GeSn/Ge quantum-well photodetectors with the Sn concentration of 3% and 4%. The optoelectronic characteristics such as responsivity and dark current of the photodetectors were measured under different temperatures. The dark current increased as the temperature increased. Using the Arrhenius equation, the activation energy of the component was extracted. It was found that the activation energy was much smaller than half of the band gap, meaning there were very few component internal defects. The spectrum for the responsivity measurement displayed the feature of the step shape, representing the phenomenon of quantization of energy level, through which we could extract the band gaps of heavy holes (HH) and light holes (LH). The responsivity cut-off wavelength of the component produced by this study was extended to 1700nm, covering the whole telecommunication band. The component can be used for important applications in fiber-optic communication. According to the responsivities measured under different temperatures, as the temperature went up, the redshift of the responsivity can be observed. Although the influence of temperature on band gap was not strong, temperature could still influence the component. In addition, the cut-off wavelength obtained based on responsivity was consistent with the position of the photoluminescence peak, proving that the band gap of the component could be obtained using both methods. Based on the activation energy data, the quantum-well structure was very suitable for GeSn. With this structure, the problem of too many internal defects could be solved.
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Liu, Yuan-yu, and 劉原毓. "Studies of optoelectronic characteristics of optically controlled cholesteric gratings." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/v36nq2.

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碩士
國立中山大學
物理學系研究所
96
A optically controlled cholesteric grating is proposed. The dye-doped cholesteric grating (DDCLC grating) can be rotated by changing the polarization of the pump-beam. The experiment results reveal that the orientation of the cholesteric grating can be rotated in a specific range decided by the alignment direction of the two substrates. Moreover, the hybrid alignment condition for the cholesteric grating is also investigated. When the ratio of d/p is larger than 0.5,the cholesteric grating is observable without applying voltage in hybrid aligned cholesteric cell, and the cholesteric gratings with hybrid alignment can have a 360 rotation angle, thus achieve the two dimension beam steering cholesteric.
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Books on the topic "Optoelectronic characteristics"

1

Goodwin, Barbara. Photonic Crystals: Characteristics, Performance and Applications. Nova Science Publishers, Incorporated, 2016.

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Book chapters on the topic "Optoelectronic characteristics"

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Yu, S. F. "Lasing Characteristics of Single and Assembled Nanowires." In Semiconductor Nanostructures for Optoelectronic Devices, 251–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_9.

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Tiginyanu, I. M., C. Schwab, A. Sarua, G. Irmer, J. Monecke, I. Kravetsky, J. Sigmund, and H. L. Hartnagel. "Optical Characteristics of Nanostructured III-V Compounds." In Frontiers of Nano-Optoelectronic Systems, 393–403. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0890-7_26.

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Ekuma, Chinedu, Israel Owate, Eziaku Osarolube, Evelyn Esabunor, and Innocent Otu. "Chemical Growth and Optoelectronic Characteristics of TiO2 Thin Film." In Ceramic Transactions Series, 77–82. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144602.ch8.

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Laref, A. "Optoelectronic Characteristics of Passivated and Non-passivated Silicon Quantum Dot." In Advances in Silicon Solar Cells, 25–52. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1_2.

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Khan, Karina, Aditi Gaur, Ushma Ahuja, Amit Soni, and Jagrati Sahariya. "A Computational Investigation of the Optoelectronic Characteristics of Chalcopyrite HgCP2." In Intelligent Computing Techniques for Smart Energy Systems, 649–56. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0252-9_58.

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Piccirillo, A., and P. E. Bagnoli. "Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation." In Crucial Issues in Semiconductor Materials and Processing Technologies, 103–7. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_9.

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Rubtsov, Nickolai, Mikhail Alymov, Alexander Kalinin, Alexey Vinogradov, Alexey Rodionov, and Kirill Troshin. "The use of high-speed optical multidimensional technique to determine the characteristics of ignition and combustion of 40% H2 - air mix in the presence of platinum metal." In Remote studies of combustion and explosion processes based on optoelectronic methods, 126–51. au: AUS PUBLISHERS, 2022. http://dx.doi.org/10.26526/chapter_62876066bef2a8.05945792.

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The main objective of this book is to acquaint the reader with the main modern problems of the multisensor data analysis and opportunities of the hyperspectral shooting being carried out in the wide range of wavelengths from ultraviolet to the infrared range, visualization of the fast combustion processes of flame propagation and flame acceleration, the limit phenomena at flame ignition and propagation. The book can be useful to students of the high courses and scientists dealing with problems of optical spectroscopy, vizualisation, digital recognizing images and gaseous combustion. The main goal of this book is to bring to the attention of the reader the main modern problems of multisensory data analysis and the possibilities of hyperspectral imaging, carried out in a broad wave-length range from ultraviolet to infrared by methods of visualizing fast combustion processes, propagation and flames acceleration, and limiting phenomena during ignition and flame propagation. The book can be useful for students of higher courses and experimental scientists dealing with problems of optical spectroscopy, visualization, pattern recognition and gas combustion.
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Dinh, Ba Minh, Aleksandr N. Timofeev, Igor A. Konyakhin, and Valery V. Korotaev. "Increasing the Reliability of Decision Making by Improving the Characteristics of Optoelectronic Channels Ensuring the Separation of Complex Shape Fruit." In Studies in Systems, Decision and Control, 229–40. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68172-2_19.

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Gee, C. M., R. J. Morrison, G. D. Thurmond, and H. W. Yen. "Characteristics and Applications of Wideband Guided-Wave Devices." In Picosecond Electronics and Optoelectronics II, 261–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72970-6_57.

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Aksun, M. I., and H. Morkoc. "Characteristics of Shielded Microstrip Lines on GaAs-Si at Millimeter-Wave Frequencies." In Picosecond Electronics and Optoelectronics II, 188–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72970-6_40.

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Conference papers on the topic "Optoelectronic characteristics"

1

Sen, Pratima, and Joseph Thomas Andrews. "Absorption characteristics of semiconductor quantum dots." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Kong-Thon F. Tsen. SPIE, 1999. http://dx.doi.org/10.1117/12.349281.

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Keraenen, Kimmo, Martti Blomberg, Outi Rusanen, Pentti Karioja, Jussi Tenhunen, Harri K. Kopola, and Ari Lehto. "Main characteristics of a miniaturized multipurpose infrared spectrometer." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Michael R. Feldman, James G. Grote, and Mary K. Hibbs-Brenner. SPIE, 1999. http://dx.doi.org/10.1117/12.348309.

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Gouin, Francois L., Carlos Almeida, Claire L. Callender, Lucie Robitaille, and Julian P. Noad. "High-speed switching characteristics of integrated optoelectronic crossbar switch." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Michael R. Feldman, James G. Grote, and Mary K. Hibbs-Brenner. SPIE, 1999. http://dx.doi.org/10.1117/12.348297.

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Kim, Quiesup, Thomas J. Cunningham, Bedabrata Pain, Michael J. Lange, and Gregory H. Olsen. "Characteristics of monolithically integrated InGaAs active pixel imager array." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Michael R. Feldman, James G. Grote, and Mary K. Hibbs-Brenner. SPIE, 1999. http://dx.doi.org/10.1117/12.348303.

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Hsu, Mao-Chieh, Y. F. Hsu, and Kuan H. Chen. "Characteristics of a superlattice infrared detector and comparison with QWIP." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344550.

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Satrusajang, Ratapon, Yuichi Nitta, and Kazuhiko Shimomura. "Steering characteristics of GaInAs/InP MQW comb-type waveguide optical deflector." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Giancarlo C. Righini and S. Iraj Najafi. SPIE, 1999. http://dx.doi.org/10.1117/12.343748.

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Nikonorov, Nikolai V., Alexander K. Przhevuskii, and Sergei G. Lunter. "Effect of heating on spectral characteristics of Er-doped laser glasses." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Shibin Jiang and Seppo Honkanen. SPIE, 1999. http://dx.doi.org/10.1117/12.344504.

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Abiri, Habibollah, F. Emami, Aref Bakhtazad, and Mohammad H. Rahnavard. "Effect of index tapering on characteristics of DFB and DBR lasers." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356936.

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Nakazawa, Masataka, Hirokazu Kubota, Kazunori Suzuki, Eiichi Yamada, and Akio Sahara. "Superb characteristics of dispersion-managed soliton transmission in TDM and WDM systems." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Yehuda B. Band. SPIE, 1999. http://dx.doi.org/10.1117/12.351050.

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Sato, Takahiro, Atsushi Uchida, and Fumihiko Kannari. "Transient characteristics between periodic attractors stabilized by OPF method in a laser diode." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356938.

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