Log in

Relevant bibliographies by topics / Optoelectric properties / Journal articles

To see the other types of publications on this topic, follow the link: Optoelectric properties.

Journal articles on the topic 'Optoelectric properties'

Author: Grafiati

Published: 28 June 2021

Last updated: 13 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Optoelectric properties.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Yi, Sum-Gyun, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Young Wook Chang, and Kyung-Hwa Yoo. "Optoelectric Properties of Gate-Tunable MoS2/WSe2Heterojunction." IEEE Transactions on Nanotechnology 15, no. 3 (May 2016): 499–505. http://dx.doi.org/10.1109/tnano.2016.2547183.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Luo, Yongfeng, Xi Li, Jianxiong Zhang, Chunrong Liao, and Xianjun Li. "The Carbon Nanotube Fibers for Optoelectric Conversion and Energy Storage." Journal of Nanomaterials 2014 (2014): 1–13. http://dx.doi.org/10.1155/2014/580256.

Full text

Abstract:

This review summarizes recent studies on carbon nanotube (CNT) fibers for weavable device of optoelectric conversion and energy storage. The intrinsic properties of individual CNTs make the CNT fibers ideal candidates for optoelectric conversion and energy storage. Many potential applications such as solar cell, supercapacitor, and lithium ion battery have been envisaged. The recent advancement in CNT fibers for optoelectric conversion and energy storage and the current challenge including low energy conversion efficiency and low stability and future direction of the energy fiber have been finally summarized in this paper.

APA, Harvard, Vancouver, ISO, and other styles

3

Park, Ji Young, and Hee Jung Park. "Optoelectric Property and Flexibility of Tin-Doped Indium Oxide (ITO) Thin Film." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3542–46. http://dx.doi.org/10.1166/jnn.2020.17489.

Full text

Abstract:

Transparent conducting electrodes (TCEs) are key materials for electronic devices such as flat panel displays (e.g., a liquid crystal display and a light emitting diode display), photovoltaic cells, and transparent transistors. Tin-doped indium oxide (ITO) is known to be highly conductive/transparent, but rigid. In this study, very thin (<35 nm) ITO films with amorphous phases were prepared on flexible substrates and their optoelectric properties investigated. A 10 nm-thick ITO film was also fabricated. Because of their low thickness, their transmittances were above 80% at ˜550 nm wavelength. Their sheet resistances were below 0.7 kΩ/sq and decreased with increasing film thickness. An interesting observation was that their sheet resistances were nearly unchanged even at a bending radius of ˜2 mm. These optoelectric properties and flexibility demonstrate that the ITO films fabricated in this study are suitable transparent conducting oxides for the electrodes of flexible optoelectric devices.

APA, Harvard, Vancouver, ISO, and other styles

4

SOGA, T., T. JIMBO, K. M. KRISHNA, and M. UMENO. "AMORPHOUS CARBON THIN FILMS FOR OPTOELECTRIC DEVICE APPLICATION." International Journal of Modern Physics B 14, no. 02n03 (January 30, 2000): 206–17. http://dx.doi.org/10.1142/s0217979200000200.

Full text

Abstract:

Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor - a natural source, graphite and CH4/H2 mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

APA, Harvard, Vancouver, ISO, and other styles

5

吕, 德涛. "Optoelectric Properties and Research Situation of Silver Transparent Conductive Film." Material Sciences 09, no. 07 (2019): 708–16. http://dx.doi.org/10.12677/ms.2019.97089.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Liu, Kun, Lianjie Zhu, Tengfei Jiang, Youguang Sun, Hongbin Li, and Dejun Wang. "MesoporousTiO2Micro-Nanometer Composite Structure: Synthesis, Optoelectric Properties, and Photocatalytic Selectivity." International Journal of Photoenergy 2012 (2012): 1–9. http://dx.doi.org/10.1155/2012/849062.

Full text

Abstract:

Mesoporous anatase TiO2micro-nanometer composite structure was synthesized by solvothermal method at 180°C, followed by calcination at 400°C for 2 h. The as-prepared TiO2was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and Fourier transform infrared spectrum (FT-IR). The specific surface area and pore size distribution were obtained from N2adsorption-desorption isotherm, and the optoelectric property of the mesoporous TiO2was studied by UV-Vis absorption spectrum and surface photovoltage spectra (SPS). The photocatalytic activity was evaluated by photodegradation of sole rhodamine B (RhB) and sole phenol aqueous solutions under simulated sunlight irradiation and compared with that of Degussa P-25 (P25) under the same conditions. The photodegradation preference of this mesoporous TiO2was also investigated for an RhB-phenol mixed solution. The results show that the TiO2composite structure consists of microspheres (∼0.5–2 μm in diameter) and irregular aggregates (several hundred nanometers) with rough surfaces and the average primary particle size is 10.2 nm. The photodegradation activities of this mesoporous TiO2on both RhB and phenol solutions are higher than those of P25. Moreover, this as-prepared TiO2exhibits photodegradation preference on RhB in the RhB-phenol mixture solution.

APA, Harvard, Vancouver, ISO, and other styles

7

Ghosh, Moumita, Mangolika Mondal, and Aritra Acharyya. "The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes." Advances in OptoElectronics 2013 (March 25, 2013): 1–12. http://dx.doi.org/10.1155/2013/840931.

Full text

Abstract:

The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of p+-p-n-n+ structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and 9.4144×103, respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and 7.8800×103, respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the n+-layer instead of p+-layer of the device.

APA, Harvard, Vancouver, ISO, and other styles

8

Wang, Zhenyu, Alex M. Ganose, Chunming Niu, and David O. Scanlon. "First-principles insights into tin-based two-dimensional hybrid halide perovskites for photovoltaics." Journal of Materials Chemistry A 6, no. 14 (2018): 5652–60. http://dx.doi.org/10.1039/c8ta00751a.

Full text

Abstract:

Layered lead-free perovskites, (BA)₂(MA)n₋₁SnnI_3n+1, exhibit excellent optoelectric properties for photovoltaic applications. The champion absorber displays a high spectroscopic limited maximum efficiency greater than 24%, competitive with current generation absorbers.

APA, Harvard, Vancouver, ISO, and other styles

9

Kishimoto, N., H. Amekura, K. Kono, and C. G. Lee. "Radiation resistance of amorphous silicon in optoelectric properties under proton bombardment." Journal of Nuclear Materials 258-263 (October 1998): 1908–13. http://dx.doi.org/10.1016/s0022-3115(98)00149-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Nakata, Masami, Hajime Shirai, Tatsuru Namikawa, and Isamu Shimizu. "Preparation of µc-Si:H/a-Si:H Multilayers and Their Optoelectric Properties." Japanese Journal of Applied Physics 29, Part 1, No. 6 (June 20, 1990): 1027–32. http://dx.doi.org/10.1143/jjap.29.1027.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Peng, R. W., X. Q. Huang, F. Qiu, Y. M. Liu, A. Hu, and S. S. Jiang. "Structural Symmetry and Optical Properties of Dielectric Multilayers." Surface Review and Letters 10, no. 02n03 (April 2003): 311–15. http://dx.doi.org/10.1142/s0218625x03004950.

Full text

Abstract:

We have investigated the structural symmetry and optical properties of the dielectric multilayers. By using the transfer-matrix method, the propagation of electromagnetic wave in the dielectric multilayer film is obtained. It is shown that if a mirror symmetry is induced to the structure, perfect transmissions will definitely happen. And the perfect transmission can be controlled at certain wavelengths if the special structure with symmetry is achieved. Experimental observations are in good agreement with the theoretical predictions. This finding will have potential applications to optoelectric devices, such as the wavelength division multiplexing (WDM) system.

APA, Harvard, Vancouver, ISO, and other styles

12

Yao, Yu, Dandan Sang, Liangrui Zou, Qinglin Wang, and Cailong Liu. "A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices." Nanomaterials 11, no. 8 (August 22, 2021): 2136. http://dx.doi.org/10.3390/nano11082136.

Full text

Abstract:

Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

APA, Harvard, Vancouver, ISO, and other styles

13

Mohammed, Modaffer A., Ali M. Mousa, and J. P. Ponpon. "Optical and Optoelectric Properties of PbCdS Ternary Thin Films Deposited by CBD." JSTS:Journal of Semiconductor Technology and Science 9, no. 2 (June 30, 2009): 117–23. http://dx.doi.org/10.5573/jsts.2009.9.2.117.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

YOU Hong-jun, 游红军, 李穿江 LI Chuan-jiang, 张智勇 ZHANG Zhi-yong, 关金涛 GUAN Jing-tao, 未本美 WEI Ben-mei, and 戴志群 DAI Zhi-qun. "Synthesis and Optoelectric Properties of Novel Spirofluorene for Blue Light-emitting Materials." Chinese Journal of Luminescence 32, no. 11 (2011): 1126–32. http://dx.doi.org/10.3788/fgxb20113211.1126.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Wang, Huafeng, Kaushik Ghosh, Zhenhua Li, Takahiro Maruyama, Sakae Inoue, and Yoshinori Ando. "Direct Growth of Single-Walled Carbon Nanotube Films and Their Optoelectric Properties." Journal of Physical Chemistry C 113, no. 28 (June 11, 2009): 12079–84. http://dx.doi.org/10.1021/jp8114463.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

He, Jianqiao, Xian Zhang, Chong Zheng, and Fuqiang Huang. "Synthesis, structure, magnetic and optoelectric properties of layered NaM0.5Sn0.5S2 (M= Mn, Fe)." Journal of Alloys and Compounds 746 (May 2018): 328–34. http://dx.doi.org/10.1016/j.jallcom.2018.02.278.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Latukhina, N. V., D. A. Pisarenko, A. V. Volkov, and V. A. Kitaeva. "PHOTOSENSITIVE MATRIX BASED ON POROUS MICROCRYSTALLINE SILICON." Vestnik of Samara University. Natural Science Series 17, no. 5 (June 14, 2017): 115–21. http://dx.doi.org/10.18287/2541-7525-2011-17-5-115-121.

Full text

Abstract:

The article presents the results of experimental researches of optoelectric properties of porous silicon. Layers of porous silicon were formed using electrochemical etching process in water-alcohol solutions of hydrofluoric acid on plates with a pre-established microrelief surface. Evaluation of possibility of using of created structure as the artificial retina component was performed based on the results of the research.

APA, Harvard, Vancouver, ISO, and other styles

18

Park, Hee Jung, Kimoon Lee, Il-Doo Kim, Seon-Jin Choi, and Byungki Ryu. "Abnormal Optoelectric Properties of Two-Dimensional Protonic Ruthenium Oxide with a Hexagonal Structure." ACS Applied Materials & Interfaces 10, no. 26 (June 12, 2018): 22661–68. http://dx.doi.org/10.1021/acsami.8b07533.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Zhang, L. Q., C. H. Zhang, Y. Q. Xian, J. Liu, Z. N. Ding, T. X. Yan, Y. G. Chen, C. H. Su, J. Y. Li, and H. P. Liu. "Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation." Applied Surface Science 440 (May 2018): 814–20. http://dx.doi.org/10.1016/j.apsusc.2018.01.170.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Ko, Tsung-Shine, Der-Yuh Lin, You-Chi He, Chen-Chia Kao, Bo-Yuan Hu, Ray-Hua Horng, Fan-Lei Wu, Chih-Hung Wu, and Yu-Li Tsai. "Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses." International Journal of Photoenergy 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/703045.

Full text

Abstract:

The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm.I-Vmeasurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

APA, Harvard, Vancouver, ISO, and other styles

21

Koshy, Raji, and C. S. Menon. "Effect of Vacuum Annealing on the Optoelectric and Morphological Properties of F16CuPc Thin Films." E-Journal of Chemistry 9, no. 1 (2012): 294–300. http://dx.doi.org/10.1155/2012/101686.

Full text

Abstract:

The effect of vacuum annealing temperature on optical and electrical properties of vacuum evaporated F16CuPc thin films have been studied spectrophotometer and Kiethely electrometer respectively. The band gap energy both fundamental and excitonic remains unchanged when the annealing temperature increased. The optical constants of thin films are obtained by means of thin film spectrophotometry. From the electrical study, the activation energies of the films, in the intrinsic region and impurity region have been determined from the Arrhenious plots of lnσversus1000/T. Optical data have been obtained from both absorption and reflectivity spectra over the wavelength range 200-800 nm. The absorption coefficient α and extinction coefficient k are estimated from the spectrum. The mechanism of optical absorption follows the rule of direct transition. Using α and k, the refractive index and the dielectric constants are determined. The SEM investigations are F16CuPc thin films are expected to find application in the fabrication of optoelectronic devices such as organic transistors and LED devices.

APA, Harvard, Vancouver, ISO, and other styles

22

Enesca, Alexandru. "INFLUENCE OF PRECURSOR COMPOSITION ON OPTOELECTRIC AND PHOTOCATALYTIC PROPERTIES OF TIO2 AND WO3 FILMS." Environmental Engineering and Management Journal 10, no. 8 (2011): 1191–96. http://dx.doi.org/10.30638/eemj.2011.171.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Roy, Shrawan, Manh-Ha Doan, Jeongyong Kim, Seon Kyeong Kang, Gwang Hwi Ahn, Hyun Seok Lee, and Seok Joon Yun. "Modulation of optoelectric properties of monolayer transition metal dichalcogenides placed on a metal pattern." Journal of the Korean Physical Society 78, no. 8 (February 17, 2021): 693–99. http://dx.doi.org/10.1007/s40042-021-00102-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Khamon, Warut, and Wisanu Pecharapa. "Acid Surface Treatment of Sol-Gel Derived ZnO Thin Films for Anti-Reflection Coating Application." Key Engineering Materials 675-676 (January 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/kem.675-676.177.

Full text

Abstract:

Transparent ZnO films were deposited by sol-gel spin coating process. HCl acid was used in the wet etching process to modify its surface morphology that can be used as an anti-reflective layer of optoelectric devices. The effect of etching time on its structure, surface morphologies and optical properties were scrutinized. The overall results indicated that HCl acid has obviously effect on significant change in surface morphologies and its roughness varied in the range of 0.5 nm to 4.9 nm.

APA, Harvard, Vancouver, ISO, and other styles

25

Wang, Xue-Ting, Yu-Hao Fu, Guang-Ren Na, Hong-Dong Li, and Li-Jun Zhang. "Barium as doping element tuning both toxicity and optoelectric properties of lead-based halide perovskites." Acta Physica Sinica 68, no. 15 (2019): 157101. http://dx.doi.org/10.7498/aps.68.20190596.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Deng, Jiyong, Liu Yu, Hua Tan, Xianwei Huang, and Weiguo Zhu. "Synthesis and optoelectric properties of fluorene-alt-benzene organic phosphorescent polymers containing pendent cyclometalated iridium complex." Polymer Science Series B 56, no. 6 (November 2014): 830–36. http://dx.doi.org/10.1134/s1560090414060050.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Tseng, Shih-Feng, Wen-Tse Hsiao, Donyau Chiang, Kuo-Cheng Huang, and Chang-Pin Chou. "Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation." Applied Surface Science 257, no. 16 (June 2011): 7204–9. http://dx.doi.org/10.1016/j.apsusc.2011.03.091.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Mostafa, Myeesha, Mohammad Jellur Rahman, and Shamima Choudhury. "Enhanced dielectric properties of BaTiO3 ceramics with cerium doping, manganese doping and Ce-Mn co-doping." Science and Engineering of Composite Materials 26, no. 1 (January 28, 2019): 62–69. http://dx.doi.org/10.1515/secm-2017-0177.

Full text

Abstract:

Abstract Ba1−xCexTi1−yMnyO3 (where x and y varies from 0.00 to 0.03) ceramic samples are synthesized by conventional solid state reaction technique. The samples are sintered at 1473 K for 4 h. The grain size is observed to increase with increasing dopant and co-dopant concentration. The X-ray diffraction confirmed the cubic phase of these BaTiO3-based ceramics with a small amount of secondary phase. The current density shows a nearly linear relationship with voltage, and the AC resistivity of the samples is observed to decrease with increasing frequency and doping concentration. The dielectric constant and dielectric loss were observed to decrease with frequency in the lower frequency range (0.2–10 kHz), but remained almost the same at the high-frequency region (>10 kHz). Though Ce-doped samples shows better dielectric properties than Mn-doped samples, the Ce-Mn co-doped samples, having improved their dielectric properties, can be used to fabricate different optoelectric devices.

APA, Harvard, Vancouver, ISO, and other styles

29

Enesca, Alexandru, Luminita Isac, and Anca Duta. "Hybrid structure comprised of SnO2, ZnO and Cu2S thin film semiconductors with controlled optoelectric and photocatalytic properties." Thin Solid Films 542 (September 2013): 31–37. http://dx.doi.org/10.1016/j.tsf.2013.06.008.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Reo, Youjin, Huihui Zhu, Ji-Young Go, Kyu In Shim, Ao Liu, Taoyu Zou, Haksoon Jung, et al. "Effect of Monovalent Metal Iodide Additives on the Optoelectric Properties of Two-Dimensional Sn-Based Perovskite Films." Chemistry of Materials 33, no. 7 (March 30, 2021): 2498–505. http://dx.doi.org/10.1021/acs.chemmater.0c04786.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Cho, Hyunmin, Jinhyeong Kwon, Inho Ha, Jinwook Jung, Yoonsoo Rho, Habeom Lee, Seungyong Han, Sukjoon Hong, Costas P. Grigoropoulos, and Seung Hwan Ko. "Mechano-thermo-chromic device with supersaturated salt hydrate crystal phase change." Science Advances 5, no. 7 (July 2019): eaav4916. http://dx.doi.org/10.1126/sciadv.aav4916.

Full text

Abstract:

Active control of transparency/color is the key to many functional optoelectric devices. Applying an electric field to an electrochromic or liquid crystal material is the typical approach for optical property control. In contrast to the conventional electrochromic method, we developed a new concept of smart glass using new driving mechanisms (based on mechanical stimulus and thermal energy) to control optical properties. This mechano-thermo-chromic smart glass device with an integrated transparent microheater uses a sodium acetate solution, which shows a unique marked optical property change under mechanical impact (mechanochromic) and heat (thermochromic). Such mechano-thermo-chromic devices may provide a useful approach in future smart window applications that could be operated by external environment conditions.

APA, Harvard, Vancouver, ISO, and other styles

32

Xu, Feng, Sheng Nan Sun, Yi Xin Wang, Feng Ling Bian, He Wang, Zhen Xiao Fu, Hai Shui Wang, and Hai Ning Cui. "The Influence of Top Layer on ZnO/Cu₂S/ZnO Films in Optoelectric and Photocatalytic Performance." Key Engineering Materials 575-576 (September 2013): 306–9. http://dx.doi.org/10.4028/www.scientific.net/kem.575-576.306.

Full text

Abstract:

In this paper, the ZnO/Cu2S/ZnO complex films were fabricated by Radio Frequency (RF) magnetron sputtering, and their transparent, conductive and photocatalytic properties have been investigated. The results show the properties of ZnO/Cu2S/ZnO complex films vary when the top layer ZnO thickness changes.

APA, Harvard, Vancouver, ISO, and other styles

33

Kashif, M., U. Hashim, M. E. Ali, Syed M. Usman Ali, M. Rusop, Z. H. Ibupoto, and Magnus Willander. "Effect of Different Seed Solutions on the Morphology and Electrooptical Properties of ZnO Nanorods." Journal of Nanomaterials 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/452407.

Full text

Abstract:

The morphology and electrooptical properties of ZnO nanorods synthesized on monoethanolamine-based seed layer and KOH-based seed layer were compared. The seed solutions were prepared in monoethanolamine in 2-methoxyethanol and potassium hydroxide in methanol, respectively. Zinc acetate dihydrate was as a common precursor in both solutions. The nanorod-ZnOs were synthesized via the spin coating of two different seed solutions on silicon substrates followed by their hydrothermal growth. The scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Raman studies revealed that the ZnO nanorods obtained from monoethanolamine-based seed layer had fewer defects, better crystals, and better alignment than those realized via KOH-based seed layer. However, the current-voltage (I-V) characteristics demonstrated better conductivity of the ZnO nanorods obtained via KOH-based seed layer. The current measured in forward bias was 4 mA and 40 μA for ZnO-nanorods grown on KOH-based seed layer and monoethanolamine-based with the turn on voltage of approximately 1.5 V and 2.5 V, respectively, showing the feasibility of using both structures in optoelectric devices.

APA, Harvard, Vancouver, ISO, and other styles

34

Peng, Liping, Yuan'an Zhao, Xiaofeng Liu, Zhaoliang Cao, Dawei Li, Yafei Lian, Yun Cui, et al. "Tailoring the free carrier and optoelectric properties of indium tin oxide film via quasi-continuous-wave laser annealing." Applied Surface Science 538 (February 2021): 148104. http://dx.doi.org/10.1016/j.apsusc.2020.148104.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Zahran, Magdy K., Thomas S. Faheem, Amal M. Abdel-Karim, Maher M. Saleeb, and Noha Elhalawany. "Enhanced optical as well as electrical properties of poly 2-acetyl pyrrole P(2-APy) for optoelectric applications." Chemical Papers 75, no. 7 (March 25, 2021): 3599–606. http://dx.doi.org/10.1007/s11696-021-01609-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Fletcher, Robert A., and Edgar S. Etz. "Complementary Molecular Information on Phthalocyanine Compounds Derived From Laser Microprobe Mass Spectrometry and Micro-Raman Spectroscopy." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 2 (August 12, 1990): 300–301. http://dx.doi.org/10.1017/s0424820100135101.

Full text

Abstract:

Various metal phthalocyanines (Pc's) have come under study because of their optoelectric properties which make them attractive materials for fabrication of ultra-fast molecular electronic devices. Probably the most extensively investigated metal Pc is vanadyl phthalocyanine, VOPc, which has been proposed as a medium for optical storage devices and has been shown to be a photoconductor in the infrared. Several methods have been used to elucidate the relationship between molecular structure and the Pc's optical and electronic properties.The thrust of this work is to show how well laser microprobe mass spectrometry (LAMMS) and micro-Raman spectroscopy complement each other to provide information so that structural assignments can be made. The vibrational frequencies obtained from micro-Raman spectroscopy indicate molecular structure while mass spectrometry provides the mass (m/z) of the molecule along with certain features of the structure through the fragmentation process. The compounds studied are the metal-free Pc (H2PC), and the derivatives containing the divalent cations of Ni, Cu, and VO. Some of the results are illustrated here for VOPc.

APA, Harvard, Vancouver, ISO, and other styles

37

Muzammal uz Zaman, Muhammad, Muhammad Imran, Abida Saleem, Afzal Hussain Kamboh, Muhammad Arshad, Nawazish Ali Khan, and Parvez Akhter. "Potassium doped methylammonium lead iodide (MAPbI 3 ) thin films as a potential absorber for perovskite solar cells; structural, morphological, electronic and optoelectric properties." Physica B: Condensed Matter 522 (October 2017): 57–65. http://dx.doi.org/10.1016/j.physb.2017.07.067.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Li Jiangyong, 李江勇, 王淼妍 Wang Miaoyan, and 贲畅 Ben Chang. "分布式光电系统性能评估." Laser & Optoelectronics Progress 58, no. 18 (2021): 1811026. http://dx.doi.org/10.3788/lop202158.1811026.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Liu, Cheng-Kai, Wei-Hsuan Chen, Chung-Yu Li, and Ko-Ting Cheng. "High-Contrast and Scattering-Type Transflective Liquid Crystal Displays Based on Polymer-Network Liquid Crystals." Polymers 12, no. 4 (March 26, 2020): 739. http://dx.doi.org/10.3390/polym12040739.

Full text

Abstract:

The methods to enhance contrast ratios (CRs) in scattering-type transflective liquid crystal displays (ST-TRLCDs) based on polymer-network liquid crystal (PNLC) cells are investigated. Two configurations of ST-TRLCDs are studied and are compared with the common ST-TRLCDs. According to the comparisons, CRs are effectively enhanced by assembling a linear polarizer at the suitable position to achieve better dark states in the transmissive and reflective modes of the reported ST-TRLCDs with the optimized configuration, and its main trade-off is the loss of brightness in the reflective modes. The PNLC cell, which works as an electrically switchable polarizer herein, can be a PN-90° twisted nematic LC (PN-90° TNLC) cell or a homogeneous PNLC (H-PNLC) cell. The optoelectric properties of PN-90° TNLC and those of H-PNLC cells are compared in detail, and the results determine that the ST-TRLCD with the optimized configuration using an H-PNLC cell can achieve the highest CR. Moreover, no quarter-wave plate is used in the ST-TRLCD with the optimized configuration, so a parallax problem caused by QWPs can be solved. Other methods for enhancing the CRs of the ST-TRLCDs are also discussed.

APA, Harvard, Vancouver, ISO, and other styles

40

Bach, Long Giang, Nam Giang Nguyen, and Van Thi Thanh Ho. "Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD." International Journal of Photoenergy 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/1217576.

Full text

Abstract:

We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

APA, Harvard, Vancouver, ISO, and other styles

41

SU, C., T. K. SHEU, M. A. WAN, Y. T. CHANG, and M. C. FENG. "PREPARATION AND CHARACTERIZATION OF ITO THIN FILMS ON GLASS BY A SOL–GEL PROCESS USING METAL SALTS." International Journal of Nanoscience 03, no. 04n05 (August 2004): 447–54. http://dx.doi.org/10.1142/s0219581x04002243.

Full text

Abstract:

Indium-tin-oxide (ITO) thin film is one of the indispensable materials for advanced optoelectric technologies. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol–gel method. The initial sols were prepared from anhydrous ethanol solutions of indium nitrate ( In ( NO 3)3·1 H 2 O ) and tin chloride ( SnCl 4), with different In:Sn ratios. The sols were dip-coated on the substrates and were subjected to annealing at different temperatures. Depending on compositions, the electrical resistivity of ITO coating varied from 1.4×103Ω/□ to 3.5×103Ω/□, and the minimum value for the electric resistivity was observed for the films containing 8% Sn by weight. Increasing heat treatment-temperatures from 400 to 600°C led to increase in conductivity by one order of magnitude. The optical transmittance of 550°C-annealed ITO films was more than 90% in the visible region. The morphology of the ITO films was examined by scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The rms-roughness of 350 nm thick ITO film was 1.5 nm. Increasing film thickness resulted in decrease in both, surface roughness and electrical resistivity. The correlations among the film properties and the film preparation conditions are discussed in detail.

APA, Harvard, Vancouver, ISO, and other styles

42

Torlak, Yasemin, Merve Güzel, and Metin Ak. "IMPROVING THE OPTOELECTRONIC PROPERTIES OF CONDUCTING POLYMER VIA POLYOXOMETALATE." E-journal of New World Sciences Academy 15, no. 1 (January 15, 2020): 1–8. http://dx.doi.org/10.12739/nwsa.2020.15.1.3a0091.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Sabov, Viktoria, Мaria Potorij, Iwan Kityk, Mykhailo Filep, and Marian Sabov. "Interaction in quasibinary systems based on TlSbP2Se6 and compounds of the Tl2Se-Sb2Se3 system." Ukrainian Chemistry Journal 85, no. 3 (June 7, 2019): 20–26. http://dx.doi.org/10.33609/0041-6045.85.3.2019.20-26.

Full text

Abstract:

Complex chalcogenides display semiconductor properties. In particular, heavy metal compounds that are formed in the Tl2Se-Sb2Se3 system are good thermoelectric materials. At the same time TlSbP2Se6 compound belongs to the family of hexaseleno-hypodiphosphates, which representatives have a number of interesting properties (optoelectric, non-linear, etc.) in the near infrared range. The combination of these properties in one material causes some scientific and practical interest, therefore our research was aimed to study the nature of the interaction between TlSbP2Se6 and the thermally stable phases of the Tl2Se-Sb2Se3 system in order to find new promising candidate for applications in electronic devices. The alloys were prepared from corresponding binary, ternary compounds and quaternary TlSbP2Se6 by a direct one-temperature method in evacuated quartz ampoules at temperatures above the melting point of the initial and final products. The initial compounds were synthesized by the reaction of their high purity component elements in stoichiometric proportion. According to the results of the research, it was found that cross-sections based on TlSbP2Se6 and the thermally stable compounds of the Tl2Se-Sb2Se3 section are quasibinary: Sb2Se3–TlSbP2Se6 and TlSbSe2–TlSbP2Se6. Tl9SbSe6 – TlSbP2Se6 and Tl2Se - TlSbP2Se6 systems are not quasibinary, instead quasibinary sections Tl2Se-Tl4P2Se6 and Tl9SbSe6-Tl4P2Se6 which crossing their. The phase equilibrium in Sb2Se3 – TlSbP2Se6 and TlSbSe2 – TlSbP2Se6 systems were studied by common differential thermal analysis (DTA), X-ray powder diffraction (XRD) and microstructure analysis. The eutectic interactions are observed in both systems. The invariant points coordinates are: 77 mol.% TlSbP2Se6, 709 K (system Sb2Se3 – TlSbP2Se6) and 45 mol.% TISbSe2, 680 K (system TlSbSe2 – TlSbP2Se6). Significant boundary solid solutions are formed on the basis of the quaternary compound. Their region extends up to 10 mol% in the system Sb2Se3 – TlSbP2Se6 and to about 18 mol.% in the system TlSbSe2 –TlSbP2Se6 at annealing temperature (573 К). Near the Sb2Se3 and TlSbSe2, the solubility limits do not exceed several mol.%.

APA, Harvard, Vancouver, ISO, and other styles

44

Sabov, Viktoria, Мaria Potorij, Iwan Kityk, Mykhailo Filep, and Marian Sabov. "Interaction in quasibinary systems based on TlSbP2Se6 and compounds of the Tl2Se-Sb2Se3 system." Ukrainian Chemistry Journal 85, no. 3 (June 7, 2019): 20–26. http://dx.doi.org/10.33609/6045.85.3.2019.20-26.

Full text

Abstract:

Complex chalcogenides display semiconductor properties. In particular, heavy metal compounds that are formed in the Tl2Se-Sb2Se3 system are good thermoelectric materials. At the same time TlSbP2Se6 compound belongs to the family of hexaseleno-hypodiphosphates, which representatives have a number of interesting properties (optoelectric, non-linear, etc.) in the near infrared range. The combination of these properties in one material causes some scientific and practical interest, therefore our research was aimed to study the nature of the interaction between TlSbP2Se6 and the thermally stable phases of the Tl2Se-Sb2Se3 system in order to find new promising candidate for applications in electronic devices. The alloys were prepared from corresponding binary, ternary compounds and quaternary TlSbP2Se6 by a direct one-temperature method in evacuated quartz ampoules at temperatures above the melting point of the initial and final products. The initial compounds were synthesized by the reaction of their high purity component elements in stoichiometric proportion. According to the results of the research, it was found that cross-sections based on TlSbP2Se6 and the thermally stable compounds of the Tl2Se-Sb2Se3 section are quasibinary: Sb2Se3–TlSbP2Se6 and TlSbSe2–TlSbP2Se6. Tl9SbSe6 – TlSbP2Se6 and Tl2Se - TlSbP2Se6 systems are not quasibinary, instead quasibinary sections Tl2Se-Tl4P2Se6 and Tl9SbSe6-Tl4P2Se6 which crossing their. The phase equilibrium in Sb2Se3 – TlSbP2Se6 and TlSbSe2 – TlSbP2Se6 systems were studied by common differential thermal analysis (DTA), X-ray powder diffraction (XRD) and microstructure analysis. The eutectic interactions are observed in both systems. The invariant points coordinates are: 77 mol.% TlSbP2Se6, 709 K (system Sb2Se3 – TlSbP2Se6) and 45 mol.% TISbSe2, 680 K (system TlSbSe2 – TlSbP2Se6). Significant boundary solid solutions are formed on the basis of the quaternary compound. Their region extends up to 10 mol% in the system Sb2Se3 – TlSbP2Se6 and to about 18 mol.% in the system TlSbSe2 –TlSbP2Se6 at annealing temperature (573 К). Near the Sb2Se3 and TlSbSe2, the solubility limits do not exceed several mol.%.

APA, Harvard, Vancouver, ISO, and other styles

45

Zhang, Yurou, Miaoqiang Lyu, Tengfei Qiu, Ekyu Han, Il Ku Kim, Min-Cherl Jung, Yun Hau Ng, Jung-Ho Yun, and Lianzhou Wang. "Halide Perovskite Single Crystals: Optoelectronic Applications and Strategical Approaches." Energies 13, no. 16 (August 17, 2020): 4250. http://dx.doi.org/10.3390/en13164250.

Full text

Abstract:

Halide perovskite is one of the most promising semiconducting materials in a variety of fields such as solar cells, photodetectors, and light-emitting diodes. Lead halide perovskite single crystals featuring long diffusion length, high carrier mobility, large light absorption coefficient and low defect density, have been attracting increasing attention. Fundamental study of the intrinsic nature keeps revealing the superior optoelectrical properties of perovskite single crystals over their polycrystalline thin film counterparts, but to date, the device performance lags behind. The best power conversion efficiency (PCE) of single crystal-based solar cells is 21.9%, falling behind that of polycrystalline thin film solar cells (25.2%). The oversized thickness, defective surfaces, and difficulties in depositing functional layers, hinder the application of halide perovskite single crystals in optoelectronic devices. Efforts have been made to synthesize large-area single crystalline thin films directly on conductive substrates and apply defect engineering approaches to improve the surface properties. This review starts from a comprehensive introduction of the optoelectrical properties of perovskite single crystals. Then, the synthesis methods for high-quality bulk crystals and single-crystalline thin films are introduced and compared, followed by a systematic review of their optoelectronic applications including solar cells, photodetectors, and X-ray detectors. The challenges and strategical approaches for high-performance applications are summarized at the end with a brief outlook on future work.

APA, Harvard, Vancouver, ISO, and other styles

46

Khan, Firoz, and Jae Hyun Kim. "Performance Degradation Analysis of c-Si PV Modules Mounted on a Concrete Slab under Hot-Humid Conditions Using Electroluminescence Scanning Technique for Potential Utilization in Future Solar Roadways." Materials 12, no. 24 (December 5, 2019): 4047. http://dx.doi.org/10.3390/ma12244047.

Full text

Abstract:

The stability of the photovoltaic (PV) modules is critical when deployed in a non-ideal environment. Among the different factors, temperature and humidity are the two major factors affecting PV stability, making them significant causes of its degradation in terms of optoelectric and materials properties. Nowadays, with the increase in PV installation (here, we are only taking account of c-Si-based PV modules) to generate green electricity, effective space utilization is an important issue. Recently, people have been considering deploying PV modules on the road to utilize the space available on highways (roadways). This raises several new issues in the deployment of PV modules. However, issues related to temperature and humidity retain the same importance. Normally, these stability tests are performed in a damp-heat (DH) stress-testing chamber in an accelerated condition at 85 °C and 85% relative humidity (RH). In this work, c-Si PV modules were fixed over a concrete slab to prepare a PV interacted block, which can be used to build concrete-based roads. The performance of this PV on the concrete slab was tested in a DH stress-testing chamber in an accelerated condition at 85 °C and 85% RH for 4000 h. For the comparison, a PV module without concrete was also evaluated. The degradation of the PV modules was characterized using the electroluminescence scanning technique. After 2500 h of exposure to the DH conditions, the performance retention of the PV modules mounted on the concrete was 93.2%, which was nearly 5% higher than the module without the concrete slab.

APA, Harvard, Vancouver, ISO, and other styles

47

He, Rui, Sang Mo Kim, Ma Ro Kim, Rui Tang, and Chung Wung Bark. "Preparation of Hexagonal SrMnO3 High-Quality Target for Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 21, no. 7 (July 1, 2021): 4005–10. http://dx.doi.org/10.1166/jnn.2021.19240.

Full text

Abstract:

In recent years, the optical behavior of complex oxides are being increasingly used in light-harvesting applications. Perovskites are promising candidates for photovoltaic, photocatalytic, and optoelectric applications because of tunable band gaps and other unique properties such as fer-roelectricity To study the optical behavior of ferromagnetic-ferroelectric oxides, SrMnO3 (SMO3) targets intended for use in magnetron sputtering were prepared using SrCO3 (99.99%) and Mn2O3 (99.99%) powders by a two-step solid reaction method. Experiments were performed at various temperatures to determine the optimum calcination temperature of the SMO3 powder (1000 °C) and optimum sintering temperature of the prepared target (1300 °C), in an effort to optimize the preparation process of the target at the laboratory scale and reduce the cost of the target by more than 20-fold. Samples of the ground powder were calcined at 800, 1000, 1200, and 1300 °C for 10 h, and the resultant targets were pressed into 1 -in molds after grinding and subsequently sintered at the same temperatures at which the corresponding powders were calcined, i.e., at 800, 1000, 1200, and 1300 °Cfor 48 h. The microcrystalline state of the powders was observed by scanning electron microscopy. The prepared targets were analyzed by X-ray diffraction, and the results were compared with the powder diffraction file card of hexagonal SMO3 to determine the optimum calcination temperature and sintering temperature of the powder formulation. Finally, the Vickers hardness values of the targets were measured, and the optimum target preparation process was determined.

APA, Harvard, Vancouver, ISO, and other styles

48

Hussein, Bushra H. "Comparative Study for Optoelectronic Properties of Zn (Te, Se) Solar Cells." Neuroquantology 18, no. 5 (May 30, 2020): 77–82. http://dx.doi.org/10.14704/nq.2020.18.5.nq20171.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Zhang, Qiankun, Rongjie Zhang, Jiancui Chen, Wanfu Shen, Chunhua An, Xiaodong Hu, Mingli Dong, Jing Liu, and Lianqing Zhu. "Remarkable electronic and optical anisotropy of layered 1T’-WTe2 2D materials." Beilstein Journal of Nanotechnology 10 (August 20, 2019): 1745–53. http://dx.doi.org/10.3762/bjnano.10.170.

Full text

Abstract:

Anisotropic 2D materials exhibit novel optical, electrical and thermoelectric properties that open possibilities for a great variety of angle-dependent devices. Recently, quantitative research on 1T’-WTe2 has been reported, revealing its fascinating physical properties such as non-saturating magnetoresistance, highly anisotropic crystalline structure and anisotropic optical/electrical response. Especially for its anisotropic properties, surging research interest devoted solely to understanding its structural and optical properties has been undertaken. Here we report quantitative, comprehensive work on the highly anisotropic, optical, electrical and optoelectronic properties of few-layer 1T’-WTe2 by azimuth-dependent reflectance difference microscopy, DC conductance measurements, as well as polarization-resolved and wavelength-dependent optoelectrical measurements. The electrical conductance anisotropic ratio is found to ≈103 for a thin 1T’-WTe2 film, while the optoelectronic anisotropic ratio is around 300 for this material. The polarization dependence of the photo-response is ascribed to the unique anisotropic in-plane crystal structure, consistent with the optical absorption anisotropy results. In general, 1T’-WTe2, with its highly anisotropic electrical and photoresponsivity reported here, demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for applications of 2D materials for light polarization detection.

APA, Harvard, Vancouver, ISO, and other styles

50

Ghasemi, Foad, Riccardo Frisenda, Eduardo Flores, Nikos Papadopoulos, Robert Biele, David Perez de Lara, Herre S. J. van der Zant, et al. "Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2." Nanomaterials 10, no. 4 (April 9, 2020): 711. http://dx.doi.org/10.3390/nano10040711.

Full text

Abstract:

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!