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Relevant bibliographies by topics / Optoelectric properties

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Academic literature on the topic 'Optoelectric properties'

Author: Grafiati

Published: 28 June 2021

Last updated: 13 February 2022

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Journal articles on the topic "Optoelectric properties"

1

Yi, Sum-Gyun, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Young Wook Chang, and Kyung-Hwa Yoo. "Optoelectric Properties of Gate-Tunable MoS2/WSe2Heterojunction." IEEE Transactions on Nanotechnology 15, no. 3 (May 2016): 499–505. http://dx.doi.org/10.1109/tnano.2016.2547183.

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Luo, Yongfeng, Xi Li, Jianxiong Zhang, Chunrong Liao, and Xianjun Li. "The Carbon Nanotube Fibers for Optoelectric Conversion and Energy Storage." Journal of Nanomaterials 2014 (2014): 1–13. http://dx.doi.org/10.1155/2014/580256.

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This review summarizes recent studies on carbon nanotube (CNT) fibers for weavable device of optoelectric conversion and energy storage. The intrinsic properties of individual CNTs make the CNT fibers ideal candidates for optoelectric conversion and energy storage. Many potential applications such as solar cell, supercapacitor, and lithium ion battery have been envisaged. The recent advancement in CNT fibers for optoelectric conversion and energy storage and the current challenge including low energy conversion efficiency and low stability and future direction of the energy fiber have been finally summarized in this paper.

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Park, Ji Young, and Hee Jung Park. "Optoelectric Property and Flexibility of Tin-Doped Indium Oxide (ITO) Thin Film." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3542–46. http://dx.doi.org/10.1166/jnn.2020.17489.

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Transparent conducting electrodes (TCEs) are key materials for electronic devices such as flat panel displays (e.g., a liquid crystal display and a light emitting diode display), photovoltaic cells, and transparent transistors. Tin-doped indium oxide (ITO) is known to be highly conductive/transparent, but rigid. In this study, very thin (<35 nm) ITO films with amorphous phases were prepared on flexible substrates and their optoelectric properties investigated. A 10 nm-thick ITO film was also fabricated. Because of their low thickness, their transmittances were above 80% at ˜550 nm wavelength. Their sheet resistances were below 0.7 kΩ/sq and decreased with increasing film thickness. An interesting observation was that their sheet resistances were nearly unchanged even at a bending radius of ˜2 mm. These optoelectric properties and flexibility demonstrate that the ITO films fabricated in this study are suitable transparent conducting oxides for the electrodes of flexible optoelectric devices.

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SOGA, T., T. JIMBO, K. M. KRISHNA, and M. UMENO. "AMORPHOUS CARBON THIN FILMS FOR OPTOELECTRIC DEVICE APPLICATION." International Journal of Modern Physics B 14, no. 02n03 (January 30, 2000): 206–17. http://dx.doi.org/10.1142/s0217979200000200.

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Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor - a natural source, graphite and CH4/H2 mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

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吕, 德涛. "Optoelectric Properties and Research Situation of Silver Transparent Conductive Film." Material Sciences 09, no. 07 (2019): 708–16. http://dx.doi.org/10.12677/ms.2019.97089.

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Liu, Kun, Lianjie Zhu, Tengfei Jiang, Youguang Sun, Hongbin Li, and Dejun Wang. "MesoporousTiO2Micro-Nanometer Composite Structure: Synthesis, Optoelectric Properties, and Photocatalytic Selectivity." International Journal of Photoenergy 2012 (2012): 1–9. http://dx.doi.org/10.1155/2012/849062.

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Mesoporous anatase TiO2micro-nanometer composite structure was synthesized by solvothermal method at 180°C, followed by calcination at 400°C for 2 h. The as-prepared TiO2was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and Fourier transform infrared spectrum (FT-IR). The specific surface area and pore size distribution were obtained from N2adsorption-desorption isotherm, and the optoelectric property of the mesoporous TiO2was studied by UV-Vis absorption spectrum and surface photovoltage spectra (SPS). The photocatalytic activity was evaluated by photodegradation of sole rhodamine B (RhB) and sole phenol aqueous solutions under simulated sunlight irradiation and compared with that of Degussa P-25 (P25) under the same conditions. The photodegradation preference of this mesoporous TiO2was also investigated for an RhB-phenol mixed solution. The results show that the TiO2composite structure consists of microspheres (∼0.5–2 μm in diameter) and irregular aggregates (several hundred nanometers) with rough surfaces and the average primary particle size is 10.2 nm. The photodegradation activities of this mesoporous TiO2on both RhB and phenol solutions are higher than those of P25. Moreover, this as-prepared TiO2exhibits photodegradation preference on RhB in the RhB-phenol mixture solution.

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Ghosh, Moumita, Mangolika Mondal, and Aritra Acharyya. "The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes." Advances in OptoElectronics 2013 (March 25, 2013): 1–12. http://dx.doi.org/10.1155/2013/840931.

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The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of p+-p-n-n+ structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and 9.4144×103, respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and 7.8800×103, respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the n+-layer instead of p+-layer of the device.

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Wang, Zhenyu, Alex M. Ganose, Chunming Niu, and David O. Scanlon. "First-principles insights into tin-based two-dimensional hybrid halide perovskites for photovoltaics." Journal of Materials Chemistry A 6, no. 14 (2018): 5652–60. http://dx.doi.org/10.1039/c8ta00751a.

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Layered lead-free perovskites, (BA)₂(MA)n₋₁SnnI_3n+1, exhibit excellent optoelectric properties for photovoltaic applications. The champion absorber displays a high spectroscopic limited maximum efficiency greater than 24%, competitive with current generation absorbers.

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Kishimoto, N., H. Amekura, K. Kono, and C. G. Lee. "Radiation resistance of amorphous silicon in optoelectric properties under proton bombardment." Journal of Nuclear Materials 258-263 (October 1998): 1908–13. http://dx.doi.org/10.1016/s0022-3115(98)00149-4.

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Nakata, Masami, Hajime Shirai, Tatsuru Namikawa, and Isamu Shimizu. "Preparation of µc-Si:H/a-Si:H Multilayers and Their Optoelectric Properties." Japanese Journal of Applied Physics 29, Part 1, No. 6 (June 20, 1990): 1027–32. http://dx.doi.org/10.1143/jjap.29.1027.

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Dissertations / Theses on the topic "Optoelectric properties"

1

Altalebi, Hasanain Basim. "Processing of Ultra-Thin Film of Un Modified C60 Fullerene Using the Langmuir-Blodgett Technique. Effect of Structure on Stiffness and Optoelectric Properties." Wright State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=wright1506520625022502.

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Gavranović, Stevan. "Monokrystaly perovskitů pro detekci elektromagnetického záření." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2021. http://www.nusl.cz/ntk/nusl-445139.

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This thesis is focused on the study of the detection of electromagnetic radiation using monocrystalline perovskites. Theoretical part deals with basic principles of detections and possible applications of hybrid perovskite crystals in the field of ultraviolet and visible spectrum detection. Parameters of the recently published perovskite photodetectors are also presented. Experimental part describes synthesis, structural and optical properties of MAPbBr3 single crystals and electrical characterization of the Au/MAPbBr3/Au photodetector. Photodetector parameters (responsivity, external quantum efficiency and specific detectivity) are calculated based on the spectral and switching (on/off) current responses.

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Ginger, David Stanton. "Optoelectronic properties of CdSe nanocrystals." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621187.

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Landes, Christy. "The dependence of the opto-electronic properties of CdSe nanoparticles on surface properties." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/30657.

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Figueiredo, José Maria Longras. "Optoelectronic properties of resonant tunnelling diodes." Tese, Universidade do Porto. Reitoria, 2000. http://hdl.handle.net/10216/14347.

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Casey, Abby. "Optoelectronic properties of new conjugated materials." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/46164.

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Next-generation electronic devices which are cheap, lightweight and flexible could be realised through the use of solution processable organic polymer and small molecule semiconductors. Unlike inorganic semiconductors such as silicon, soluble organic semiconductors could be processed using traditional high through-put printing techniques such as roll-to-roll processing and ink-jet printing, which would dramatically reduce manufacturing costs. Whilst organic semiconductors are not expected to be as high performance as inorganic semiconductors, improvements in performance are still required before commercialisation is possible. One way to help improve performance is to exploit the chemical versatility of organic materials. Many different structures can be synthesised through chemical modification, allowing the optoelectronic properties (such as the optical band gap and energy levels) and physical properties (such as solid state structure) of the material to be tuned. Materials can therefore be chemically designed to optimise their performance in organic electronic devices. This work is focused on exploring the relationship between chemical structure, material properties and device performance, through the design and synthesis of new materials for organic field-effect transistors (OFET) and organic photovoltaics (OPV). The majority of the new materials synthesised in this thesis are new donor-acceptor polymers (Chapters 2-6), in which an electron donating monomer and electron accepting monomer are co-polymerised. Whilst there is a vast wealth of different donor monomer structures available, there has been less focus on the synthesis of new electron accepting monomers. In this work the common electron acceptor monomer 2,1,3-benzothiadiazole (BT) is chemically modified to either increase the solubility (Chapter 2) or increase the electron accepting strength (Chapters 3 and 4). Increasing the strength of the electron accepting unit in donor-acceptor polymers was found to induce N-type (electron conducting) behaviour in OFET devices (Chapter 3) or improve OPV performance by reducing the optical band gap and increasing light absorption (Chapter 4). Power conversion efficiencies of ~6.5% in OPV devices were achieved. In chapter 6 a novel BT based acceptor monomer is designed to maximise polymer backbone planarity which resulted in promising hole mobilities of up to 0.5 cm2/Vs when tested in OFET devices. In Chapter 5 the strength of the common electron accepting unit benzo[d][1,2,3]thiadiazole (BTz) is also increased through chemical modification. Similarly to Chapter 4, we find that increasing the strength of the electron accepting unit of the donor-acceptor polymer improves the OPV performance through increased light absorption, resulting in efficiencies of ~6.5% in OPV devices. Finally in Chapter 7, new electron rich conjugated small molecules are synthesised and the optoelectronic properties investigated.

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Figueiredo, José Maria Longras. "Optoelectronic properties of resonant tunnelling diodes." Doctoral thesis, Universidade do Porto. Reitoria, 2000. http://hdl.handle.net/10216/14347.

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Octon, T. "Optoelectronic properties of two-dimensional molybdenum ditelluride." Thesis, University of Exeter, 2019. http://hdl.handle.net/10871/35713.

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In this thesis the layered, two-dimensional material MoTe2 is examined experimentally for its optoelectronic properties, using a field effect transistor device configuration. MoTe2 experiences a strong light matter interaction, which is highly dependent on the conditions of the measurement, and the wavelength of light used. Light is able to: produce a photocurrent in MoTe2, desorb adsorbates from the surface, and even controllably thin by a single layer at a time. A theoretical study on MoTe2 also provides insights on the source of some of these interesting light matter interactions. MoTe2 is found to be a fast and responsive photodetector when illuminated with red laser light in ambient conditions, with increases in current stemming from the photovoltaic effect. Due to the generated charge carriers from the photovoltaic effect, conductivity can increase by increasing the Fermi energy of the material, or by a photogating effect where excited charges are trapped and behave as an artificial gate for the field effect transistor. The mechanisms of charge trapping are experimentally investigated due to their prevalence in the photodetection mechanisms. A theoretical study points towards the existence of two types of trap states, in not just MoTe2 but all transition metal dichalcogenides, with shallow traps closer to the valence band edge (τ ~ 500 s) and deeper traps (τ ~ 1000 s), further away from the valence band edge. MoTe2, under the effects of higher energy photons from blue and green lasers, showed different photocurrent mechanisms to red light. From the increased energy of the photons, photo-desorption of adsorbates on the surface of MoTe2 occurred causing a decrease in the overall current, in a rarely seen photocurrent mechanism. Again, both shallow and deep traps are evident from the experimental measurements, with the shallow traps being removed when illuminated by higher energy photons. Finally, a humidity assisted photochemical layer-by-layer etching process was developed with an in-situ Raman spectroscopy system, able to thin MoTe2 by a single layer at a time with 200 nm spatial resolution. MoTe2 FETs were created with thinned channels to examine the effect of the thinning technique on optoelectronic properties. Some improvement in optoelectronic performance (higher responsivity, higher mobility) was seen for the thinned channel devices, with great improvement observed for monolayer MoTe2.

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Tong, Wing-yun, and 唐穎潤. "Organic optoelectronic materials: optical properties and 1D nanostructure fabrication." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38574597.

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Jalili, Yousef Seyed. "Optoelectronic properties of GaAs-based dilute nitrides." Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.408757.

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Books on the topic "Optoelectric properties"

1

Roundhill, D. Max. Optoelectronic Properties of Inorganic Compounds. Boston, MA: Springer US, 1999.

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Roundhill, D. Max, and John P. Fackler, eds. Optoelectronic Properties of Inorganic Compounds. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6.

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3

Guldi, Dirk M. Fullerenes: From Synthesis to Optoelectronic Properties. Dordrecht: Springer Netherlands, 2002.

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4

Guldi, Dirk M., and Nazario Martin, eds. Fullerenes: From Synthesis to Optoelectronic Properties. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-015-9902-3.

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5

NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectric Applications (2004 St. Petersburg, Russia). Zinc oxide--a material for micro- and optoelectronic applications. Dordrecht: Springer, 2005.

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6

Bube, Richard H. Photoelectronic properties of semiconductors. Cambridge: Cambridge University Press, 1992.

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7

Roy, Kallol. Optoelectronic Properties of Graphene-Based van der Waals Hybrids. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-59627-9.

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8

Dahl, William L. Photonic crystals: Optical properties, fabrication, and applications. New York: Nova Science Publishers, 2011.

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9

Helmut, Föll, ed. Porous semiconductors: Optical properties and applications. London: Springer, 2009.

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10

Liu, Cheng-Hua. Electrical and Optoelectronic Properties of the Nanodevices Composed of Two-Dimensional Materials. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4.

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Book chapters on the topic "Optoelectric properties"

1

Gawad, Shady, Ana Valero, Thomas Braschler, David Holmes, Philippe Renaud, Vanni Lughi, Tomasz Stapinski, et al. "Optoelectronic Properties." In Encyclopedia of Nanotechnology, 2000. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100615.

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2

Gray, Gary M., and Christopher M. Lawson. "Structure-Property Relationships in Transition Metal-Organic Third-Order Nonlinear Optical Materials." In Optoelectronic Properties of Inorganic Compounds, 1–27. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_1.

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Kershaw, Stephen V. "Metallo-Organic Materials for Optical Telecommunications." In Optoelectronic Properties of Inorganic Compounds, 349–406. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_10.

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Sibley, Scott, Mark E. Thompson, Paul E. Burrows, and Stephen R. Forrest. "Electroluminescence in Molecular Materials." In Optoelectronic Properties of Inorganic Compounds, 29–54. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_2.

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Shi, S. "Nonlinear Optical Properties of Inorganic Clusters." In Optoelectronic Properties of Inorganic Compounds, 55–105. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_3.

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Long, Nicholas J. "Organometallics for Nonlinear Optics." In Optoelectronic Properties of Inorganic Compounds, 107–67. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_4.

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Kalyanasundaram, K., and M. Grätzel. "Efficient Photovoltaic Solar Cells Based on Dye Sensitization of Nanocrystalline Oxide Films." In Optoelectronic Properties of Inorganic Compounds, 169–94. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_5.

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Forward, Jennifer M., John P. Fackler, and Zerihun Assefa. "Photophysical and Photochemical Properties of Gold(l) Complexes." In Optoelectronic Properties of Inorganic Compounds, 195–229. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_6.

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Kenney, John W. "Pressure Effects on Emissive Materials." In Optoelectronic Properties of Inorganic Compounds, 231–68. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_7.

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Ko, Minh C., and Gerald J. Meyer. "Photoluminescence of Inorganic Semiconductors for Chemical Sensor Applications." In Optoelectronic Properties of Inorganic Compounds, 269–315. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-6101-6_8.

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Conference papers on the topic "Optoelectric properties"

1

Yi, Sum-Gyun, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Kyung-Hwa Yoo, and Young Wook Chang. "Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388678.

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2

Yun, Je-Jung, Gwang-Chae Oh, Su-Mi Park, and Eun-Mi Han. "Optoelectric properties in the phosphor-doped polymeric light-emitting diodes." In Symposium on Integrated Optoelectronic Devices, edited by E. F. Schubert and H. Walter Yao. SPIE, 2002. http://dx.doi.org/10.1117/12.469211.

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Varkey, A. J., and A. F. Fort. "Some optoelectric properties of chemically deposited thin films of nickel and cobalt oxides." In SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, edited by Carl M. Lampert. SPIE, 1993. http://dx.doi.org/10.1117/12.161970.

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Ptashchenko, Alexander A., and Fedor A. Ptashchenko. "Tunnel surface recombination in optoelectronic device modeling." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov and Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280420.

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Guedes, Andre F. S., Simone Tartari, and Idaulo J. Cunha. "The new Flexible Optoelectronic Organic Sensor (FOOS)." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, edited by André-Jean Attias and Balaji Panchapakesan. SPIE, 2019. http://dx.doi.org/10.1117/12.2528225.

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Yadav, Shriniwas, and Inderpreet Kaur. "Effect of annealing over optoelectronic properties of graphene based transparent electrodes." In 5TH NATIONAL CONFERENCE ON THERMOPHYSICAL PROPERTIES: (NCTP‐09). American Institute of Physics, 2016. http://dx.doi.org/10.1063/1.4945234.

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Berchenko, Nicolas N., A. I. Vinnikova, Alexander Y. Nikiforov, E. A. Tretyakova, and S. V. Fadyeev. "Growth and properties of native oxides for IV-VI optoelectronic devices." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov and Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280467.

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Bellil, Wafa, Abdelkader Aissat, and Jean Pierre Vilcot. "Substrate Effect on InGaN Optoelectronic Properties." In 2018 6th International Renewable and Sustainable Energy Conference (IRSEC). IEEE, 2018. http://dx.doi.org/10.1109/irsec.2018.8702885.

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Wang, H., P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, et al. "Optoelectronic properties of GaAs nanowire photodetector." In 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2012. http://dx.doi.org/10.1109/commad.2012.6472399.

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10

Gell, Michael A. "Optoelectronic properties of Si/Ge superlattices." In Semi - DL tentative, edited by Gottfried H. Doehler, Emil S. Koteles, and Joel N. Schulman. SPIE, 1990. http://dx.doi.org/10.1117/12.20757.

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Reports on the topic "Optoelectric properties"

1

Hsieh, Timothy H., and Brian M. Wong. Optoelectronic and excitonic properties of oligoacenes and one-dimensional nanostructures. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/1002094.

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Leonard, Francois Leonard. Temperature dependence of the electronic and optoelectronic properties of carbon nanotube devices. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1113878.

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