Journal articles: 'Opto-Spintronics'

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Němec, P., M. Fiebig, T. Kampfrath, and A. V. Kimel. "Antiferromagnetic opto-spintronics." Nature Physics 14, no. 3 (March 2018): 229–41. http://dx.doi.org/10.1038/s41567-018-0051-x.

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Sierra, Juan F., Jaroslav Fabian, Roland K. Kawakami, Stephan Roche, and Sergio O. Valenzuela. "Van der Waals heterostructures for spintronics and opto-spintronics." Nature Nanotechnology 16, no. 8 (July 19, 2021): 856–68. http://dx.doi.org/10.1038/s41565-021-00936-x.

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Wang, Mingchao, Renhao Dong, and Xinliang Feng. "Two-dimensional conjugated metal–organic frameworks (2D c-MOFs): chemistry and function for MOFtronics." Chemical Society Reviews 50, no. 4 (2021): 2764–93. http://dx.doi.org/10.1039/d0cs01160f.

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Caspers, Christian, Dongyoung Yoon, Murari Soundararajan, and Jean-Philippe Ansermet. "Opto-spintronics in InP using ferromagnetic tunnel spin filters." New Journal of Physics 17, no. 2 (February 13, 2015): 022004. http://dx.doi.org/10.1088/1367-2630/17/2/022004.

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Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon, and Jeffrey Bokor. "Progress toward picosecond on-chip magnetic memory." Applied Physics Letters 120, no. 14 (April 4, 2022): 140501. http://dx.doi.org/10.1063/5.0083897.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

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Huang, Y. Q., V. Polojärvi, S. Hiura, P. Höjer, A. Aho, R. Isoaho, T. Hakkarainen, et al. "(Invited) Quest for Fully Spin and Optically Polarized Semiconductor Nanostructures for Room-Temperature Opto-Spintronics." ECS Meeting Abstracts MA2023-02, no. 34 (December 22, 2023): 1666. http://dx.doi.org/10.1149/ma2023-02341666mtgabs.

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Spintronics represents a new paradigm for future electronics, photonics and information technology, which explores the spin degree of freedom of the electron for information storage, processing and transfer. Since 1990s, we have witnessed great success of metal-based spintronics that has revolutionized the mass data storage industry. There has also been an enormous push for semiconductor spintronics during the past three decades, with the aim to capitalize the past and current success of charge-based semiconductor technology and to make its spin counterpart the backbone of future spintronics just like semiconductors have done in today’s electronics/photonics. An exclusive advantage of semiconductor spintronics is its potential for opto-spintronics that will allow integration of spin-based information processing and storage with photon-based information transfer and communications. Unfortunately, progresses of semiconductor spintronics have so far been severely hampered by the failure to generate nearly fully spin-polarized charge carriers in semiconductors at and above room temperature (RT) at which today’s devices operate. In this work, we succeed to achieve conduction electron spin polarization exceeding 90% at RT in a semiconductor nanostructure, which remains steadily high even up to 110°C [1]. This represents the highest RT electron spin polarization ever reported in any semiconductor by any approach! This breakthrough is accomplished by a conceptually new approach of defect-engineered remote spin filtering and amplification of InAs quantum-dot (QD) electrons via an adjacent tunneling-coupled GaNAs quantum well acting as a spin filter. The extraordinary spin filtering effect in GaNAs is enabled by spin-dependent recombination via spin-polarized defects, i.e. grown-in Ga self-interstitials, which selectively deplete conduction electrons with an opposite spin orientation to that of the defect electron. In sharp contrast to the general trend of deteriorating spin polarization with increasing temperature seen in all other approaches of spin generation, our approach is gifted with an opposite temperature dependence up to RT thanks to a thermally accelerated remote spin-filtering effect as a result of thermally activated recombination via the defects [2]. We further show that the QD electron spin can be remotely manipulated by spin control in the adjacent spin filter, paving the way for remote spin encoding and writing of quantum memory as well as for remote spin control of spin-photon interfaces. This work demonstrates the feasibility to implement opto-spintronic functionality under practical device operation conditions in a semiconductor nanostructure system based on the mature III-V semiconductor technology commonly used for today’s optoelectronics and photonics. It could also pave the way for a range of potential spintronic and opto-spintronic applications exploiting the state-of-the-art GaAs technology platform, such as spin-LEDs, spin lasers, spin-polarized single-photon sources, quantum spin-photon interfaces, spin qubits, etc. References [1] Y.Q. Huang, V. Polojärvi, S. Hiura, P. Höjer, A. Aho, R. Isoaho, T. Hakkarainen, M. Guina, S. Sato, J. Takayama, A. Murayama, I.A. Buyanova and W.M. Chen, Nature Photonics 15, 475 (2021). [2] Y.Q. Huang, Y. Puttisong, P. Höjer, A. Aho, R. Isoaho, T. Hakkarainen, M. Guina, I.A. Buyanova and W.M. Chen, unpublished

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Zerbib, Maxime, Maxime Romanet, Thibaut Sylvestre, Christian Wolff, Birgit Stiller, Jean-Charles Beugnot, and Kien Phan Huy. "Spin-orbit interaction through Brillouin scattering in nanofibers." EPJ Web of Conferences 287 (2023): 06011. http://dx.doi.org/10.1051/epjconf/202328706011.

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Spin-orbit interactions (SOI), describing the transfer of a spin degree of freedom to an orbital angular momentum (OAM), have been widely explored in recent opto-acoustic studies for applications mainly in spintronics and for topological insulators [1]. We report the observation of SOI by Brillouin scattering in an optical nanofiber. Specifically, we describe the transfer of a spin degree of freedom from light incident to the nanofiber to an acoustic vortex with a topological charge of order 2 in the form of OAM. Coupled with the phase matching condition for the energy conservation during Brillouin scattering, it results in a backscattered wave with a spin opposite to the incident wave. This observation allows considering applications of opto-acoustic Brillouin memory based on polarization conversion through a SOI [2].

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Matsubara, Masakazu. "Ultrafast Optical Control of Magnetic Interactions in Carrier-Density-Controlled Ferromagnetic Semiconductors." Applied Sciences 9, no. 5 (March 6, 2019): 948. http://dx.doi.org/10.3390/app9050948.

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Investigation of the interaction of ultrashort laser pulses with magnetically ordered materials has become a fascinating research topic in modern magnetism. Especially, the control of magnetic order by sub-ps laser pulses has become a fundamentally important topic with a high potential for future spintronics applications. This paper will review the recent success in optically controlling the magnetic interactions in carrier-density-controlled ferromagnetic semiconductor EuO doped with Gd ions. When the Gd concentration is low, the magnitude of the magnetic interaction is enhanced by the irradiation of ultrashort laser pulses, whereas it is attenuated when the Gd concentration is high. In ferromagnetic Eu1−xGdxO, we thereby demonstrate the strengthening as well as the weakening of the magnetic interaction by 10% and within 3 ps by optically controlling the magnetic exchange interaction. This principle—ultrafast optical control of magnetic interaction—can be applied to future ultrafast opto-spintronics.

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Navarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance." Crystals 10, no. 5 (May 1, 2020): 359. http://dx.doi.org/10.3390/cryst10050359.

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III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended their applicability to spintronic devices. However, in most III-Nitrides the low solubility of the magnetic ions leads to the formation of secondary phases that are often responsible for the observed magnetic behavior of the layers. The present review summarizes the research dedicated to the understanding of the basic properties, from the fabrication to the performance, of III-Nitride-based phase-separated magnetic systems containing embedded magnetic nanostructures as suitable candidates for spintronics applications.

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Ghoshal, Debjit, Elisa Miller-Link, and Jao van de Lagemaat. "Defect Engineering in Large Area Epitaxial Monolayer MoS₂ for Optoelectronics and Beyond." ECS Meeting Abstracts MA2023-01, no. 13 (August 28, 2023): 1318. http://dx.doi.org/10.1149/ma2023-01131318mtgabs.

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Monolayers of transition metal dichalcogenides (TMDCs), due to their tunable properties, have shown immense promise in applications such as optoelectronics, flexible electronics, spintronics and energy harvesting. Defect engineering has emerged as a facile tool to tune the properties of monolayer TMDCs making them more potent for these applications. While a high propensity of defects is useful for certain applications like catalysis, many other applications benefit from low defect densities. Thus, understanding the nature of these defects as well as finding quick throughput techniques to characterize them have become critical. Additionally, although several efforts have focused on creation/healing of defects, these processes are still premature and not well understood. In this talk, we will discuss defect engineering in large area epitaxial monolayer MoS2 thin films. We will outline in-situ approaches for fabrication/healing of defects. We will also demonstrate a quick throughput technique to characterize defect densities in these thin films. We envision the ability to modulate defect densities (create/heal) in a controllable fashion in these materials can open-up an additional knob to tune the opto-electronic properties of these materials thus making them more marketable for applications in opto-electronics, photonics, energy harvesting and beyond.

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Hung, Chang-Ming, Diem Thi-Xuan Dang, Amit Chanda, Derick Detellem, Noha Alzahrani, Nalaka Kapuruge, Yen T. H. Pham, et al. "Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces." Nanomaterials 13, no. 4 (February 18, 2023): 771. http://dx.doi.org/10.3390/nano13040771.

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The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS2/BPIO (biphase iron oxide, Fe3O4 and α-Fe2O3) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS2 flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS2/BPIO at T > ~120 K—the Verwey transition temperature of Fe3O4 (TV). However, an enhanced magnetization is achieved at T < TV. In the latter case, a comparative analysis of the transport properties of Pt/WS2/BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS2/BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.

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Paquette, Michelle M., Daniel Plaul, Aiko Kurimoto, Brian O. Patrick, and Natia L. Frank. "Opto-Spintronics: Photoisomerization-Induced Spin State Switching at 300 K in Photochrome Cobalt–Dioxolene Thin Films." Journal of the American Chemical Society 140, no. 44 (October 10, 2018): 14990–5000. http://dx.doi.org/10.1021/jacs.8b09190.

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Ibrahim, E. M. M., A. Z. Mahmoud, L. Galal, Y. El Sayed, and E. R. Shaaban. "Investigation of the opto-magnetic properties of Co doped ZnO nanoparticles and thin films for spintronics." Journal of Ovonic Research 17, no. 6 (November 2021): 519–32. http://dx.doi.org/10.15251/jor.2021.176.519.

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Zn1-xCoxO (0≤x≤0.10) nanocrystalline compounds with different compositions were prepared by ball milling, and thin films of these compounds were prepared by electron evaporation method. XRD patterns are used to study the structural properties of these films. All films showed a hexagonal wurtzite structure. Using XRD patterns, calculate crystallite. The optical constants n and k of the Zn1-xCoxO nanocrystalline film are calculated in the range of 300-2500 nm based on K-K method. As Co is more doped, the refractive index also shows an increase. According to the Tauc relationship, the optical energy gap of the Zn1-xCoxO film is calculated, which proves to be a direct transition.

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Chen, Yequan, Zhendong Chen, Wenxuan Sun, Yongda Chen, Xianyang Lu, Xuezhong Ruan, Fengqiu Wang, et al. "Observation of an anisotropic ultrafast spin relaxation process in large-area WTe₂ films." Journal of Applied Physics 131, no. 16 (April 28, 2022): 163903. http://dx.doi.org/10.1063/5.0090935.

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Weyl semimetal Td-WTe2 hosts the natural broken inversion symmetry and strong spin–orbit coupling, which contains profound spin-related physics within a picosecond timescale. However, the comprehensive understanding of ultrafast spin behaviors in WTe2 is lacking due to its limited quality of large-scale films. Here, we report on an anisotropic ultrafast spin dynamics in highly oriented Td-WTe2 films using a femtosecond pump–probe technique at room temperature. A transient spin polarization-flip transition as fast as 0.8 ps is observed upon photoexcitation. The inversed spin is subsequently scattered by defects with a duration of about 5.9 ps. The whole relaxation process exhibits an intriguing dual anisotropy of sixfold and twofold symmetries, which stems from the energy band anisotropy of the WTe2 crystalline structure and the matrix element effect, respectively. Our work enriches the insights into the ultrafast opto-spintronics in topological Weyl semimetals.

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Kirilyuk, Andrei, Alexey V. Kimel, and Theo Rasing. "Controlling spins with light." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1951 (September 28, 2011): 3631–45. http://dx.doi.org/10.1098/rsta.2011.0168.

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The interaction of sub-picosecond laser pulses with magnetically ordered materials has developed into an extremely exciting research topic in modern magnetism. From the discovery of sub-picosecond demagnetization over a decade ago to the recent demonstration of magnetization reversal by a single 40 fs laser pulse, the manipulation of spins by ultrashort laser pulses has become a fundamentally challenging topic with a potentially high impact for future spintronics, data storage and manipulation, and quantum computation. We have recently demonstrated that one can generate ultrashort and very strong (teslas) magnetic field pulses via the so-called inverse Faraday effect. Such optically induced magnetic field pulses provide unprecedented means for the generation, manipulation and coherent control of spins on very short time scales. The basic ideas behind these so-called opto-magnetic effects will be discussed and illustrated with recent results, demonstrating the various possibilities of this new field of femto-magnetism.

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Arockiaraj, Micheal, J. Celin Fiona, S. Ruth Julie Kavitha, Arul Jeya Shalini, and Krishnan Balasubramanian. "Topological and Spectral Properties of Wavy Zigzag Nanoribbons." Molecules 28, no. 1 (December 24, 2022): 152. http://dx.doi.org/10.3390/molecules28010152.

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Low-dimensional graphene-based nanomaterials are interesting due to their cutting-edge electronic and magnetic properties. Their large surface area, strong mechanical resistance, and electronic properties have enabled potential pharmaceutical and opto-electronic applications. Graphene nanoribbons (GNRs) are graphene strips of nanometer size possessing zigzag and armchair edge geometries with tunable widths. Despite the recent developments in the characterization, design and synthesis of GNRs, the study of electronic, magnetic and topological properties, GNRs continue to pose a challenge owing to their multidimensionality. In this study, we obtain the topological and electronic properties of a series of wave-like nanoribbons comprising nanographene units with zigzag-shaped edges. The edge partition techniques based on the convex components are employed to compute the mathematical formulae of molecular descriptors for the wave-like zigzag GNRs. We have also obtained the spectral and energetic properties including HOMO-LUMO gaps, bond delocalization energies, resonance energies, 13C NMR and ESR patterns for the GNRs. All of these computations reveal zero to very low HOMO-LUMO gaps that make these nanoribbons potential candidates for topological spintronics.

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Allieta, Mattia, Mauro Coduri, and Alberto Naldoni. "Black TiO2 and Oxygen Vacancies: Unraveling the Role in the Thermal Anatase-to-Rutile Transformation." Applied Nano 5, no. 2 (May 3, 2024): 72–83. http://dx.doi.org/10.3390/applnano5020007.

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Understanding the role of oxygen vacancies in the phase transformation of metal oxide nanomaterials is fundamental to design more efficient opto-electronic devices for a variety of applications, including sensing, spintronics, photocatalysis, and photo-electrochemistry. However, the structural mechanisms behind the phase transformation in reducible oxides remain poorly described. Here, we compare P25 and black TiO2 during the thermal anatase-to-rutile transformation using in situ synchrotron powder diffraction. The precise measurement of the phase fractions, unit cell parameters, and Ti-O bond sheds light on the phase transformation dynamics. Notably, we observe distinct temperature-dependent shifts in the relative phase fractions of anatase and rutile in both materials highlighting the role of the oxygen vacancy in promoting the phase transformation. We employ bond valence concepts for structural modeling, revealing unique trends in temperature evolution of Ti-O distances of black rutile, confirming that this TiO2 phase is preferentially reduced over anatase. These findings not only enhance our understanding of phase transitions in TiO2 but also open new ways for the design of advanced photocatalytic materials through targeted phase control.

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Lai, Wenlong, Hui Yan, and Yukai An. "Stability, electronic structures, magnetic and optical properties of Fe and non-metal (NM=B, C, N) co-doped monolayer 2H-WSe2." Modern Physics Letters B 35, no. 07 (January 11, 2021): 2150122. http://dx.doi.org/10.1142/s0217984921501220.

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The effects of Fe–NM (NM=B, C, N) co-doping on the stability, electronic structures, magnetic and optical properties of 2H-WSe2 monolayer are investigated in detail by spin-polarized density functional theory (DFT) calculations. The results show that the Fe-doped WSe2 monolayer exhibits magnetic half-metallicity (HM) with a 100% spin polarization due to the electrons partially occupied Fe [Formula: see text] and [Formula: see text] bonding states at the Femi level [Formula: see text], and eventually induces a magnetic moment of 2 [Formula: see text]. The Fe–B and Fe–N co-doped WSe2 monolayers show obvious spin-polarization and retain semiconductor character with an indirect bandgap of 0.034 eV and 0.220 eV, respectively, which can be attributed to the strong hybridization between the Fe [Formula: see text], [Formula: see text] states and [Formula: see text], [Formula: see text] orbitals at the [Formula: see text]. Interestingly, the Fe–C co-doped WSe2 monolayer exhibits a typical non-magnetic semiconductor due to the effective charge compensation between Fe and C atoms, leading to completely symmetrical spin-up and spin-down channel of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] states near [Formula: see text]. Moreover, the optical properties of WSe2 monolayer can be effectively tuned by Fe–NM co-doping, which can attribute to the introduction of impurity state. The excellent magnetic HM, tunable magnetic, optical properties of Fe–NM co-doped WSe2 monolayers are of great significance for further application in the fields of spintronics, opto-electronics and magneto-optics devices.

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Gish, J. Tyler, Dmitry Lebedev, Thomas W. Song, Vinod K. Sangwan, and Mark C. Hersam. "Van der Waals opto-spintronics." Nature Electronics, May 22, 2024. http://dx.doi.org/10.1038/s41928-024-01167-3.

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Liu, Sheng, Iftikhar Ahmed Malik, Vanessa Li Zhang, and Ting Yu. "Lightning the Spin: Harnessing the Potential of 2D Magnets in Opto‐Spintronics." Advanced Materials, October 31, 2023. http://dx.doi.org/10.1002/adma.202306920.

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AbstractSince the emergence of two‐dimensional (2D) magnets in 2017, the diversity of these materials has greatly expanded. Their 2D nature (atomic‐scale thickness) endows these magnets with strong magnetic anisotropy, layer‐dependent and switchable magnetic order, and quantum‐confined quasiparticles, which distinguish them from conventional three‐dimensional (3D) magnetic materials. Moreover, the 2D geometry facilitates light incidence for opto‐spintronic applications and potential on‐chip integration. In analogy to optoelectronics based on optical‐electronic interactions, opto‐spintronics use light‐spin interactions to process spin information stored in the solid state. In this review, we divide opto‐spintronics into three types with respect to the wavelengths of radiation interacting with 2D magnets: (1) GHz (microwave) to THz (mid‐infrared), (2) visible, and (3) UV to X‐rays. We focus on the recent research advancements on the newly discovered mechanisms of light‐spin interactions in 2D magnets and introduce the potential design of novel opto‐spintronic applications based on these interactions.This article is protected by copyright. All rights reserved

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Davies, C. S., and A. Kirilyuk. "Epsilon-near-zero regime for ultrafast opto-spintronics." npj Spintronics 2, no. 1 (June 3, 2024). http://dx.doi.org/10.1038/s44306-024-00025-4.

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AbstractOver the last two decades, breakthrough works in the field of non-linear phononics have revealed that high-frequency lattice vibrations, when driven to high amplitude by mid- to far-infrared optical pulses, can bolster the light-matter interaction and thereby lend control over a variety of spontaneous orderings. This approach fundamentally relies on the resonant excitation of infrared-active transverse optical phonon modes, which are characterized by a maximum in the imaginary part of the medium’s permittivity. Here, in this Perspective article, we discuss an alternative strategy where the light pulses are instead tailored to match the frequency at which the real part of the medium’s permittivity goes to zero. This so-called epsilon-near-zero regime, popularly studied in the context of metamaterials, naturally emerges to some extent in all dielectric crystals in the infrared spectral range. We find that the light-matter interaction in the phononic epsilon-near-zero regime becomes strongly enhanced, yielding even the possibility of permanently switching both spin and polarization order parameters. We provide our perspective on how this hitherto-neglected yet fertile research area can be explored in future, with the aim to outline and highlight the exciting challenges and opportunities ahead.

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Tao, Liting, Wei Tang, Minxing Yan, Li Ding, Jiajun Wei, Lixiang Wang, Liqi Li, Linjun Li, Deren Yang, and Yanjun Fang. "Construction of Chiral-2D/3D Perovskite Heterojunction Films for Efficient Circularly Polarized Light Detection." Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc01534c.

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2D Ruddlesden-Popper perovskites with chiral organic ligands are emerging as the promising candidates for circularly polarized light (CPL) detection, which has important applications in quantum communication and opto-spintronics. However, the...

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Sheokand, Sonia, Dharamvir Singh Ahlawat, and Amrik Singh. "Nano structural and opto-magnetic investigation of Co–Ni co-doped ZnSe for spintronics." Micro and Nanostructures, December 2023, 207740. http://dx.doi.org/10.1016/j.micrna.2023.207740.

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Ma, Guodong, Renjun Du, Fuzhuo Lian, Song Bao, Zijing Guo, Xiaofan Cai, Jingkuan Xiao, et al. "Tailoring coercive fields and the Curie temperature via proximity coupling in WSe₂/Fe₃GeTe₂ van der Waals heterostructures." 2D Materials, April 5, 2024. http://dx.doi.org/10.1088/2053-1583/ad3b12.

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Abstract Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe2/Fe3GeTe2 van der Waals (vdW) heterostructures and investigated proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-dependent modulation of magnetic order in the heterostructure. For temperatures above 40 K, WSe2-covered Fe3GeTe2 exhibits a larger coercive field than that observed in bare Fe3GeTe2, accompanied by a noticeable enhancement of the Curie temperature by 21 K. This strengthening suggests an increase in magnetic anisotropy in the interfacial Fe3GeTe2 layer, which can be attributed to the spin-orbit coupling (SOC) proximity effect induced by the adjacent WSe2 layers. However, at much lower temperatures (T<20 K), a non-monotonic modification of the coercive field is observed, showing both reduction and enhancement, which depends on the thickness of the WSe2 and Fe3GeTe2 layers. Moreover, an unconventional two-step magnetization process emerges in the heterostructure, indicating the short-range nature of SOC proximity effects. Our findings on proximity coupling may shed light on the design of future spintronic and memory devices based on 2D magnetic heterostructures.

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Pal, Apurba, J. N. Roy, P. Dey, and S. M. Yusuf. "Coexistence of Room Temperature Optical Response and Spin Valve Characteristics in ITO/V[TCNE]₂/Rubrene/Co/Au Magnetic Organic Photodetector Heterostructure." physica status solidi (RRL) – Rapid Research Letters, June 27, 2024. http://dx.doi.org/10.1002/pssr.202400113.

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We report integration of organic photodetector and organic spin valve in a single physical device – ITO/V[TCNE]2/rubrene/Co/Au magnetic organic photodetector heterostructure. Generation of photocurrent with more than 43.3% photocurrent to dark current ratio is revealed in this device under illumination of 660 nm red laser light at 0.4 V electrical bias. Moreover, room temperature spin valve response with up to 7.7% spin valve magnetoresistance peak is found at 138 Oe in the same heterostructure. Such intriguing coexistence of photocurrent generation and spin valve effect at room temperature in a single magnetic organic photodetector heterostructure paves the way for development of eco‐friendly all‐organic next generation multifunctional opto‐spintronics devices.This article is protected by copyright. All rights reserved.

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Jia, Chunyu, Rukuan Wu, Ying Hu, Wu-Ming Liu, and Zhaoxin Liang. "Dissipative Magnetic Soliton in a Spinor Polariton Bose–Einstein Condensate." Frontiers in Physics 9 (December 23, 2021). http://dx.doi.org/10.3389/fphy.2021.805841.

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Magnetic soliton is an intriguing nonlinear topological excitation that carries magnetic charges while featuring a constant total density. So far, it has only been studied in the ultracold atomic gases with the framework of the equilibrium physics, where its stable existence crucially relies on a nearly spin-isotropic, antiferromagnetic, interaction. Here, we demonstrate that magnetic soliton can appear as the exact solutions of dissipative Gross–Pitaevskii equations in a linearly polarized spinor polariton condensate with the framework of the non-equilibrium physics, even though polariton interactions are strongly spin anisotropic. This is possibly due to a dissipation-enabled mechanism, where spin excitation decouples from other excitation channels as a result of gain-and-loss balance. Such unconventional magnetic soliton transcends constraints of equilibrium counterpart and provides a novel kind of spin-polarized polariton soliton for potential application in opto-spintronics.

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Khalid, Muhammad Waleed, Jeongho Ha, Mohammed Salah El Hadri, Liyi Hsu, Saeed Hemayat, Yuxuan Xiao, Alexander Sergienko, Eric E. Fullerton, and Abdoulaye Ndao. "Meta‐Magnetic All‐Optical Helicity Dependent Switching of Ferromagnetic Thin Films." Advanced Optical Materials, October 15, 2023. http://dx.doi.org/10.1002/adom.202301599.

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AbstractTo address the ever‐increasing need for higher speed and density of information storage, recent developments in ultrafast optical switching have focused on deterministic control of magnetic properties of materials using femtosecond circularly polarized optical pulses. However, a monolithic high‐speed optical helicity‐dependent switching at room temperature has remained elusive. In recent years, ultra‐thin flat optical structures, known as metasurfaces, have been developed that offer a versatile way to manipulate electromagnetic fields using subwavelength spatial resolution. Here, a monolithic multilayer nanostructure capable of achieving optical helicity‐dependent switching in arbitrary geometries using femtosecond meta‐circularly polarized optical pulses is theoretically described and experimentally demonstrated at room temperature. The proposed monolithic meta‐magnetic platform provides a practical route to reform the current data memory, storage, and information processing technologies in integrated opto‐magnetic systems, holding great promise for cutting‐edge applications in information, spintronics, sensing, and memory storage devices.

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Qin, Yu, Jinling Yu, Yonghai Chen, Yunfeng Lai, Shuying Cheng, and Ke He. "Investigation of helicity dependent photocurrent of the surface states in a (Bi_0.7Sb_0.3)₂Te₃ nanoplate." Chinese Physics B, March 11, 2024. http://dx.doi.org/10.1088/1674-1056/ad322c.

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Abstract Helicity dependent photocurrent (HDPC) of the surface states in a high-quality topological insulator (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate grown by chemical vapor deposition (CVD) is investigated. By investigating the angle dependent HDPC, it is found that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two contacts, whereas the circular photon drag effect (CPDE) dominates the HDPC when the incident plane is parallel to the connection of the two contacts. In addition, the CPGE of the (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate is regulated by temperature, light power, excitation wavelength, the source-drain and ionic liquid top-gate voltages, and the regulation mechanisms are discussed. It is demonstrated that (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplates may provide a good platform for novel opto-spintronics devices.

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Maity, Dipak, Rahul Sharma, Krishna Rani Sahoo, Janmey Jay Panda, Ashique Lal, Anand B Puthirath, Pulickel M. Ajayan, and Tharangattu N. Narayanan. "On the electronic and spin-valley coupling of vanadium doped MoS_2(1-x)Se_2x monolayers." Journal of Physics: Condensed Matter, September 14, 2023. http://dx.doi.org/10.1088/1361-648x/acf9d5.

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Abstract Monolayers of MoS2 with tunable bandgap and valley positions are highly demanding for their applications in opto-spintronics. Herein, selenium (Se) and vanadium (V) co-doped MoS2 monolayers (vanadium doped MoS2(1-x)Se2x (V-MoSSe)) are developed and showed their variations in the electronic and optical properties with dopant content. Vanadium gets substitutionally (in place of Mo) doped within the MoS2 lattice while selenium doped in place of sulfur, as shown by a detailed microstructure and spectroscopy analyses. The bandgap tunability with selenium doping can be achieved while valley shift is occurred due to the doping of vanadium. Chemical vapor deposition assisted grown MoS2 (also selenium doped MoS2 as shown here) is known for its n-type transport behaviour while vanadium doping is found to be changing its nature to p-doping. Chirality dependent photoexcitation studies indicate a room temperature valley splitting in V-MoSSe (~8 meV), where such a valley splitting is verified using density functional theory based calculations.

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Volmer, Frank, Manfred Ersfeld, Paulo E. Faria Junior, Lutz Waldecker, Bharti Parashar, Lars Rathmann, Sudipta Dubey, et al. "Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers." npj 2D Materials and Applications 7, no. 1 (August 22, 2023). http://dx.doi.org/10.1038/s41699-023-00420-1.

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AbstractTransition metal dichalcogenides (TMDs) have attracted much attention in the fields of valley- and spintronics due to their property of forming valley-polarized excitons when illuminated by circularly polarized light. In TMD-heterostructures it was shown that these electron-hole pairs can scatter into valley-polarized interlayer exciton states, which exhibit long lifetimes and a twist-angle dependence. However, the question how to create a valley polarization of free charge carriers in these heterostructures after a valley selective optical excitation is unexplored, despite its relevance for opto-electronic devices. Here, we identify an interlayer transfer mechanism in twisted WSe2/MoSe2 heterobilayers that transfers the valley polarization from excitons in WSe2 to free charge carriers in MoSe2 with valley lifetimes of up to 12 ns. This mechanism is most efficient at large twist angles, whereas the valley lifetimes of free charge carriers are surprisingly short for small twist angles, despite the occurrence of interlayer excitons.

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Matsubara, Masakazu, Takatsugu Kobayashi, Hikaru Watanabe, Youichi Yanase, Satoshi Iwata, and Takeshi Kato. "Polarization-controlled tunable directional spin-driven photocurrents in a magnetic metamaterial with threefold rotational symmetry." Nature Communications 13, no. 1 (November 7, 2022). http://dx.doi.org/10.1038/s41467-022-34374-7.

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AbstractFuture spintronics and quantum technologies will require a portfolio of techniques for manipulating electron spins in functional nanodevices. Especially, the establishment of the methods to control spin current is the key ingredient essential for the transfer and processing of information, enabling faster and low-energy operation. However, a universal method for manipulating spin currents with full-directional controllability and tunable magnitude has not been established. Here we show that an artificial material called a magnetic metamaterial (MM), which possesses a novel spintronic functionality not exhibited by the original substance, generates photo-driven ultrafast spin currents at room temperature via the magneto-photogalvanic effect. By tuning the polarization state of the excitation light, these spin currents can be directed with tunable magnitude along an arbitrary direction in the two-dimensional plane of the MM. This new concept may guide the design and creation of artificially engineered opto-spintronic functionalities beyond the limitations of conventional material science.

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Lu, Yang, Yingying Zhang, Chi-Yuan Yang, Sergio Revuelta, Haoyuan Qi, Chuanhui Huang, Wenlong Jin, et al. "Precise tuning of interlayer electronic coupling in layered conductive metal-organic frameworks." Nature Communications 13, no. 1 (November 24, 2022). http://dx.doi.org/10.1038/s41467-022-34820-6.

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AbstractTwo-dimensional conjugated metal-organic frameworks (2D c-MOFs) have attracted increasing interests for (opto)-electronics and spintronics. They generally consist of van der Waals stacked layers and exhibit layer-depended electronic properties. While considerable efforts have been made to regulate the charge transport within a layer, precise control of electronic coupling between layers has not yet been achieved. Herein, we report a strategy to precisely tune interlayer charge transport in 2D c-MOFs via side-chain induced control of the layer spacing. We design hexaiminotriindole ligands allowing programmed functionalization with tailored alkyl chains (HATI_CX, X = 1,3,4; X refers to the carbon numbers of the alkyl chains) for the synthesis of semiconducting Ni3(HATI_CX)2. The layer spacing of these MOFs can be precisely varied from 3.40 to 3.70 Å, leading to widened band gap, suppressed carrier mobilities, and significant improvement of the Seebeck coefficient. With this demonstration, we further achieve a record-high thermoelectric power factor of 68 ± 3 nW m−1 K−2 in Ni3(HATI_C3)2, superior to the reported holes-dominated MOFs.

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Ghosal, Supriya, Arka Bandyopadhyay, Suman Chowdhury, and Debnarayan Jana. "A review on transport characteristics and Bio-sensingapplication of Silicene." Reports on Progress in Physics, August 1, 2023. http://dx.doi.org/10.1088/1361-6633/acec5a.

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Abstract Silicene, a silicon counterpart of graphene, hass been predicted to possess massless Dirac fermions.Compared to graphene, the effective spin–orbit interaction is quite significant compared to grapheneand as a result, buckling in silicene opens a gap of 1.55 meV at the Dirac point. This band gap can befurther tailored by applying in plane stress, an external electric field, chemical functionalization anddefects. This special feature allows silicene and its various derivatives as potential candidates fordevice applications. In this short review, we would like to explore the transport features of the pristinesilicene and its possible nano derivatives. Besides, the recent progress in biosensor applications ofsilicene and its hetero-structures will be highlighted.We hope the results obtained from recentexperimental and theoretical studies in silicene will setup a benchmark in diverse applications such asin spintronics, bio-sensing and opto-electronic devices.

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Jin, Yichen, Mouhui Yan, Tomislav Kremer, Elena Voloshina, and Yuriy Dedkov. "Mott–Hubbard insulating state for the layered van der Waals $$\hbox {FePX}_3$$ (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy." Scientific Reports 12, no. 1 (January 14, 2022). http://dx.doi.org/10.1038/s41598-021-04557-1.

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AbstractA broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies of the electronic correlation effects in the new 2D materials is of paramount importance for the understanding of their transport, optical and catalytic properties. Here, by means of electron spectroscopy methods in combination with density functional theory calculations we investigate the electronic structure of a new layered van der Waals $$\hbox {FePX}_3$$ FePX 3 (X: S, Se) materials. Using systematic resonant photoelectron spectroscopy studies we observed strong resonant behavior for the peaks associated with the $$3d^{n-1}$$ 3 d n - 1 final state at low binding energies for these materials. Such observations clearly assign $$\hbox {FePX}_3$$ FePX 3 to the class of Mott–Hubbard type insulators for which the top of the valence band is formed by the hybrid Fe-S/Se electronic states. These observations are important for the deep understanding of this new class of materials and draw perspectives for their further applications in different application areas, like (opto)spintronics and catalysis.

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Mamidi, N., R. K. Gupta, K. Ghosh, S. R. Mishra, and P. K. Kahol. "Magneto-transport Properties of Cobalt doped Indium Oxide Dilute Magnetic Semiconductors." MRS Proceedings 1032 (2007). http://dx.doi.org/10.1557/proc-1032-i10-01.

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AbstractRecently, oxide-based dilute magnetic semiconductors (DMS) have attracted an immense research interest to the scientists due to the possibility of inducing room temperature ferromagnetism and potential uses in novel spintronic devices. In2O3, a transparent opto-electronic material, is an interesting prospect for spintronics due to its unique combination of magnetic, electrical, and optical properties. High quality thin films of Co-doped In2O3 DMS were grown on quartz substrates using pulsed laser deposition technique. All the films have been characterized using different techniques such as x-ray diffraction, Raman spectroscopy, optical transmission spectroscopy, electrical resistivity, and Hall Effect measurement. The effect of growth temperature and oxygen pressure on the electrical, magnetic, and optical properties of these films have been studied in detail. The optical transparency in all the films is high. It has been observed that the optical transparency depends on growth temperature and oxygen pressure. The electrical parameters such as resistivity, carrier concentration, and mobility strongly depend on both oxygen pressure and growth temperature. The films grown at low temperature are semiconducting in nature while the films grown at high temperature are metallic. Detailed temperature and magnetic field dependent resistivity, magnetoresistance, and Hall effect data will be presented. This work is supported by Research Corporation (award number CC6166).

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Kise, Hiroto, Satoshi Hiura, Soyoung Park, Junichi Takayama, Kazuhisa Sueoka, and Akihiro Murayama. "Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots." Applied Physics Letters 122, no. 23 (June 5, 2023). http://dx.doi.org/10.1063/5.0151467.

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Electric-field control of spin polarization of electrons during injection into InGaAs quantum dots (QDs) was studied via circularly polarized time-resolved photoluminescence. Electric-field modulation of optical spin polarization in QDs will play a key role in future progress of semiconductor opto-spintronics. The tuning of band potentials by applying external electric fields can not only affect spin-injection efficiencies but also switch dominant spin-injection layers. In this study, we developed a QD-based electric-field-effect optical spin device with two different spin-injection layers, which consisted of a GaAs and GaAs/Al0.15Ga0.85As superlattice (SL) barriers. The bias-voltage modulation of the optical spin polarization in QDs was demonstrated by changing the spin polarization degree of electrons injected from these barriers into the QD via the electric-field switching of the spin-injection layers. This was achieved by exploiting the difference in spin relaxation properties between bulk GaAs and the SL. This proposed structure, which comprised of one luminescent layer and two spin-injection layers, is highly scalable because the modulation range of optical spin polarization can be enhanced by changing the combination of spin-injection layers, as well as the material used and its layer thickness.

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Pavithra, Nagarathinam, and Muthanain Charles Robert. "Structure, Electron Density Distribution using Maximum Entropy Method, Optical and Magnetic Characteristics of Fe Doped SnS₂." Crystal Research and Technology, August 16, 2023. http://dx.doi.org/10.1002/crat.202300145.

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AbstractTwo dimensional layered magnetic materials like Fe‐doped SnS2 are cheap, abundant, and biocompatible, used for spintronics applications. The hydrothermal synthesized hexagonal nano disc structure of the sample is seen in the SEM images at room temperature. Pure SnS2, which is diamagnetic with magnetization 0.02067 emu/g becomes soft ferromagnetic by 2.5 % Fe doping with 0.672 emug−1 saturation magnetization and 0.222 kOe coercivity. A ultraviolet‐visible spectrometer measurement of the energy bandgap reveals a drop in energy from 2.35 to 2.2 eV, and the PL spectrum displays intense blue emission at a wavelength of 482–484 nm. Maximum entropy method (MEM), confirmed the ionic to covalent conversion upon Fe doping, due to the residual charge accumulation at the intermediate regions. The electron densities in Fe doped system in the plane (023) at Bond Critical Point of Sn─S and S─S are 0.327 and 0.354 e Å−3, respectively, with negative total energy density values confirming covalent bonding. A high electron density of 0.856 e Å−3 at the Sn─Sn region confirms interstitial charge accumulation. This introduces new intermediate energy levels in the forbidden region, reducing the energy bandgap and making the substance more semiconducting, making it useful for optical, opto‐electronic, and half‐metal applications.

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Fu, Houfa, Jinling Yu, Yunhe Bai, Shuying Cheng, Yunfeng Lai, Yonghai Chen, Ke He, and Qikun Xue. "Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi2Te4." Applied Physics Letters 124, no. 10 (March 4, 2024). http://dx.doi.org/10.1063/5.0193807.

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Helicity-dependent photocurrent (HDPC) of the topological surface states (TSSs) in the intrinsic magnetic topological insulator MnBi2Te4 is investigated. It is revealed that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two electrodes, while the circular photon drag effect plays the dominant role when the incident plane is parallel to the connection of the two electrodes. The CPGE current shows an odd function dependence on incident angles, which is consistent with the C3v symmetry group of the TSSs in MnBi2Te4. The amplitude of the CPGE current increases with the decrease in temperature, which can be attributed to the increase in mobility at low temperatures, confirmed by the transport measurements. Furthermore, we modulate the CPGE of MnBi2Te4 by applying top gate and source–drain voltages. Compared to Bi2Te3 of the same thickness, the CPGE current of MnBi2Te4 can be more effectively tuned by the top gate because the Fermi level of MnBi2Te4 can be effectively regulated by the top gate, and it is tuned across the Dirac point. This work suggests that the intrinsic magnetic topological insulator MnBi2Te4 is a good candidate for designing opto-spintronics devices.

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Gupta, Ram, D. Brown, K. Ghosh, S. R. Mishra, and P. K. Kahol. "Magneto-transport Properties of Gd-doped In2O3 Thin Films." MRS Proceedings 1032 (2007). http://dx.doi.org/10.1557/proc-1032-i06-04.

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AbstractDilute Magnetic Semiconductors (DMS) are a rare group of promising materials that utilize both the electronic charge - a characteristic of semiconductor materials - and the electronic spin - a characteristic of magnetic materials. Oxide based DMS show promise of ferromagnetism (FM) at room temperature. It has been found that doping metal oxides such as ZnO, TiO2, and In2O3 with magnetic ions such as Fe, Co, Mn, and Cr produces DMS, which exhibit FM above room temperature. In2O3, a transparent opto-electronic material, is an interesting prospect for spintronics due to a unique combination of magnetic, electrical, and optical properties. High quality thin films of rare earth magnetic gadolinium (Gd) doped oxide-based DMS materials have been grown by pulsed laser deposition (PLD) technique on various substrates such as single crystal of sapphire (001) and quartz under suitable growth conditions of substrate temperature and oxygen pressure in the PLD chamber. The effect of rare earth magnetic doping on the structural and electro - magnetic properties of these films has been studied using Raman Spectroscopy, X-Ray Diffraction, Scanning Electron Microscopy, and Magneto - Transport. An X- ray diffraction study reveals that these films are single phase and highly oriented. Characteristic Raman peaks typical of indium oxide are observed at 496 and 627 cm−1. We have observed high magnetoresistance (∼18 %) at a relatively small field of 1.3 Tesla for the films with 10 % gadolinium. A detailed study of temperature and magnetic field dependent resistivity, magnetoresistance, and Hall Effect will be presented.

Journal articles on the topic 'Opto-Spintronics'

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