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1
Boyanov, Petar. "PRIMARY PROCESSING OF SIGNALS IN AN OPTO-ELECTRONIC DEVICES." Journal Scientific and Applied Research 8, no. 1 (November 14, 2015): 10–15. http://dx.doi.org/10.46687/jsar.v8i1.172.
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The energy efficiency of systems for primary processing of signals in opto-electronic devices is analyzed for the case of identification and study of remote objects against a bright background and under low-contrast conditions. A criterion is determined for evaluating the energy efficiency of the major unit of the system for primary signal processing - the optic system, and some expressions are derived, relating the value of the signal-to-noise ratio at the device's input with these criteria (amplification factor) and other "ideal" or "real" optic systems' parameters. The specific thing here is the operation of the system for primary processing of signals when the value of recorded contrast equals 1 percent or less. As an evaluation criterion for the energy efficiency of this system, the signal-to-noise ratio is used. Comparative evaluation of various systems for primary processing of signals operating under low-contrast conditions and specific values of the signal-to-noise ratio is performed. The operation analysis for the system for primary processing of information (signals) under low-contrast conditions is performed accounting for the impact of the optic system. The evaluation criterion for the energy efficiency of the major unit of the system for primary processing of information (the optic system) is the amplification factor, which determines the limit value for the signal-to-noise ratio at the output of the optic-electronic device. The assumption is made that the flow, which determines the circle's area, is uniformly distributed, which does not cause significant errors in evaluating the energy efficiency of the optic-electronic system.
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Getzov, Petar. "EFFICIENCY OF A SYSTEM FOR PRIMARY PROCESSING OF SIGNALS IN AN OPTO-ELECTRONIC DEVICE." Journal Scientific and Applied Research 12, no. 1 (November 12, 2017): 5–10. http://dx.doi.org/10.46687/jsar.v12i1.221.
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The energy efficiency of systems for primary processing of signals in optoelectronic devices is analyzed for the case of identification and study of remote objects against a bright background and under low-contrast conditions. A criterion is determined for evaluating the energy efficiency of the major unit of the system for primary signal processing - the optic system, and some expressions are derived, relating the value of the signal-to-noise ratio at the device’s input with these criteria (amplification factor) and other “ideal†or “real†optic systems’ parameters. The specific thing here is the operation of the system for primary processing of signals when the value of recorded contrast equals 1 percent or less. As an evaluation criterion for the energy efficiency of this system, the signal-to-noise ratio is used. Comparative evaluation of various systems for primary processing of signals operating under low-contrast conditions and specific values of the signal-to-noise ratio is performed. The operation analysis for the system for primary processing of information (signals) under low-contrast conditions is performed accounting for the impact of the optic system.
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Zhekov, Zhivko, and Garo Mardirossian. "ENERGY EFFICIENCY OF A SYSTEM FOR PRIMARY PROCESSING OF SIGNALS IN AN OPTO-ELECTRONIC DEVICE OPERATION UNDER LOW-CONTRAST CONDITIONS." Journal Scientific and Applied Research 19, no. 1 (May 5, 2020): 11–16. http://dx.doi.org/10.46687/jsar.v19i1.288.
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The energy efficiency of systems for primary processing of signals in optoelectronic devices is analyzed for the case of identification and study of remote objects against a bright background and under low-contrast conditions. A criterion is determined for evaluating the energy efficiency of the major unit of the system for primary signal processing the optic system, and some expressions are derived, relating the value of the signal-to-noise ratio at the device’s input with these criteria (amplification factor) and other “ideal” or “real” optic systems’ parameters. The specific thing here is the operation of the system for primary processing of signals when the value of recorded contrast equals 1 percent or less. As an evaluation criterion for the energy efficiency of this system, the signal-to-noise ratio is used. Comparative evaluation of various systems for primary processing of signals operating under low-contrast conditions and specific values of the signal-to-noise ratio is performed. The operation analysis for the system for primary processing of information (signals) under low-contrast conditions is performed accounting for the impact of the optic system. The evaluation criterion for the energy efficiency of the major unit of the system for primary processing of information (the optic system) is the amplification factor, which determines the limit value for the signal-to-noise ratio at the output of the optic-electronic device. The assumption is made that the flow, which determines the circle’s area, is uniformly distributed, which does not cause significant errors in evaluating the energy efficiency of the optic- electronic system.
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Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon, and Jeffrey Bokor. "Progress toward picosecond on-chip magnetic memory." Applied Physics Letters 120, no. 14 (April 4, 2022): 140501. http://dx.doi.org/10.1063/5.0083897.
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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.
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Tóth, Zsolt, Miklós Tóth, Júlia Katalin Jósvai, Franciska Tóth, Norbert Flórián, Veronika Gergócs, and Miklós Dombos. "Automatic Field Detection of Western Corn Rootworm (Diabrotica virgifera virgifera; Coleoptera: Chrysomelidae) with a New Probe." Insects 11, no. 8 (August 1, 2020): 486. http://dx.doi.org/10.3390/insects11080486.
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The Western corn rootworm (WCR), Diabrotica virgifera virgifera LeConte (Coleoptera: Chrysomelidae), is a significant invasive pest of maize plantations in Europe. Integrated pest management demands an adequate monitoring system which detects the activity of insects with high accuracy in real-time. In this study, we show and test a new electronic device (ZooLog KLP), which was developed to detect WCR in the field. The ZooLog KLP consists of a trapping element that attracts insects with its color and species-specific sex pheromone. The other part is an opto-electronic sensor-ring which detects the specimens when they fall into the trap. At detection, the time of catch is recorded and sent to a web interface. In this study, we followed WCR flight patterns for six weeks in two locations, using ZooLog KLP probes. We investigated sensor precision by comparing the number of catches to the number of detections. The tool reached high accuracy (95.84%) in recording WCR. We found a peak in flight activity in August and a bimodal daily pattern. This method may be beneficial in detecting the WCR during their activity, and this new device may serve as a prototype for real-time monitoring systems and improve the management of this pest.
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Sorger, Volker. "Editorial." Nanophotonics 4, no. 1 (May 22, 2015): 114. http://dx.doi.org/10.1515/nanoph-2015-0009.
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AbstractThe year 2015 will likely have a unique place in the history books for the optics and photonics community, since it is paired with various events that are exciting for this field. For one it is the 125th birthday of the Optical Society (OSA), and in addition, the United Nations declared 2015 to be the Year Of Light. The first special issue of this year is dedicated to the topic of “Emerging Materials on Nanophotonics”. While the field of nanophotonics has seen tremendous momentum through the support of plasmonics, opto-mechanics, and quantum photonics, it often are both the breakthroughs and continuing developments of materials that bring enabling opportunities for this field. For instance, the area of 2D materials has grown out of its infancy being focused on Graphene into a crossdisciplinary subject area. Here, both scientific and engineering potential are seen in a) novel physical effects, b) higher functionality, and c) smaller form factors all found in one material option. Coincidentally, theUSNational Science Foundation recently held a path findingworkshop on 2D materials Beyond Graphene, and followed through with a dedicated two-year program to fund engineering innovations of the same. Here, the bandgap tunability of trimetal Dichalcogenides (TMD) has found to bear rich bandgap tunability via composition, alloying, and altering design options such as substrate choices or stress, thus providing a large variety of functions. In this context it is interesting to note, that with the many material choices for TMDs, the importance of targeted approaches towards accelerated material-to-marketwas raised in theMaterial Genome Initiative by the US White House. However, with the fundamental challenge of nanophotonics – weak interactions between light and matter – the choice of materials as both device building block and functionality delivery option needs to be synergistically considered. In this regard metal optics is seen as an emerging field that is able to contribute to this design evolution of devices and systems with ever growing constrains. However, materials with new functionalities and *Corresponding Author: Volker Sorger: E-mail: sorger@email.gwu.edu form factors allow utilizing field enhancement techniques in an unprecedented way. This, for instance, enables subwavelength scale photonic and opto-electronic devices with performance improvements such as utilized by the Purcell effect in light emitters, detectors, or electro-optic switching devices. On the other hand, certain novel materials are able to clearly outperform any existing option; for instance transparent-conductive-oxides (TCO) have been found to be able to alter its refractive index by unity. Lastly, with the maturing of silicon photonics as an on-chip optics platform, higher integration options are considered in this special issue; passive devices such as waveguides made out of the electro-optically active Lithium Niobate aid highfunctionality systems on-chip. However, these novel materials and subsequent devices and systems need to be compared and benchmarked in order to be a guide for the next phase of opto-electronic integration and other technologies as carried out by some contributions of this special issue.As the festivities around this Year Of Light continue, this special issue summarizes some of the interesting work around the emerging materials for nanophotonics. Concluding, I would like to thank for the input and help of the fellow Guest Editors, Jenifer Dionne, Alexandra Boltasseva, and Luke Sweatlock along with the Nanophotonics staff, Dennis Couwenberg and Tara Dorrian. Sincerely
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Jana, Susmita, Arka Bandyopadhyay, Sujoy Datta, Debaprem Bhattacharya, and Debnarayan Jana. "Emerging properties of carbon based 2D material beyond graphene." Journal of Physics: Condensed Matter 34, no. 5 (November 10, 2021): 053001. http://dx.doi.org/10.1088/1361-648x/ac3075.
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Abstract Graphene turns out to be the pioneering material for setting up boulevard to a new zoo of recently proposed carbon based novel two dimensional (2D) analogues. It is evident that their electronic, optical and other related properties are utterly different from that of graphene because of the distinct intriguing morphology. For instance, the revolutionary emergence of Dirac cones in graphene is particularly hard to find in most of the other 2D materials. As a consequence the crystal symmetries indeed act as a major role for predicting electronic band structure. Since tight binding calculations have become an indispensable tool in electronic band structure calculation, we indicate the implication of such method in graphene’s allotropes beyond hexagonal symmetry. It is to be noted that some of these graphene allotropes successfully overcome the inherent drawback of the zero band gap nature of graphene. As a result, these 2D nanomaterials exhibit great potential in a broad spectrum of applications, viz nanoelectronics, nanooptics, gas sensors, gas storages, catalysis, and other specific applications. The miniaturization of high performance graphene allotrope based gas sensors to microscopic or even nanosized range has also been critically discussed. In addition, various optical properties like the dielectric functions, optical conductivity, electron energy loss spectra reveal that these systems can be used in opto-electronic devices. Nonetheless, the honeycomb lattice of graphene is not superconducting. However, it is proposed that the tetragonal form of graphene can be intruded to form new hybrid 2D materials to achieve novel superconducting device at attainable conditions. These dynamic experimental prospects demand further functionalization of these systems to enhance the efficiency and the field of multifunctionality. This topical review aims to highlight the latest advances in carbon based 2D materials beyond graphene from the basic theoretical as well as future application perspectives.
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D’Amico, Moreno, Edyta Kinel, Gabriele D’Amico, and Piero Roncoletta. "A Self-Contained 3D Biomechanical Analysis Lab for Complete Automatic Spine and Full Skeleton Assessment of Posture, Gait and Run." Sensors 21, no. 11 (June 7, 2021): 3930. http://dx.doi.org/10.3390/s21113930.
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Quantitative functional assessment of Posture and Motion Analysis of the entire skeleton and spine is highly desirable. Nonetheless, in most studies focused on posture and movement biomechanics, the spine is only grossly depicted because of its required level of complexity. Approaches integrating pressure measurement devices with stereophotogrammetric systems have been presented in the literature, but spine biomechanics studies have rarely been linked to baropodometry. A new multi-sensor system called GOALS-E.G.G. (Global Opto-electronic Approach for Locomotion and Spine-Expert Gait Guru), integrating a fully genlock-synched baropodometric treadmill with a stereophotogrammetric device, is introduced to overcome the above-described limitations. The GOALS-EGG extends the features of a complete 3D parametric biomechanical skeleton model, developed in an original way for static 3D posture analysis, to kinematic and kinetic analysis of movement, gait and run. By integrating baropodometric data, the model allows the estimation of lower limb net-joint forces, torques and muscle power. Net forces and torques are also assessed at intervertebral levels. All the elaborations are completely automatised up to the mean behaviour extraction for both posture and cyclic-repetitive tasks, allowing the clinician/researcher to perform, per each patient, multiple postural/movement tests and compare them in a unified statistically reliable framework.
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Simoncig, Alberto, Michele Manfredda, Giulio Gaio, Nicola Mahne, Lorenzo Raimondi, Claudio Fava, Simone Gerusina, et al. "AC/DC: The FERMI FEL Split and Delay Optical Device for Ultrafast X-ray Science." Photonics 9, no. 5 (May 5, 2022): 314. http://dx.doi.org/10.3390/photonics9050314.
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Free-electron lasers (FELs) are the most advanced class of light-sources, by virtue of their unique capability to lase high-brightness pulses characterized by wavelengths spanning the extreme-ultraviolet, the soft and hard X-ray spectral domains, as well as by temporal lengths lying in the femtosecond (fs) timescale. The next step to push the current standards in ultrafast X-ray science is strongly linked to the possibility of engineering and exploiting time-resolved experiments exclusively for FELs pulses, ideally having different colors tunable at specific electronic resonance of the chemical elements. At the seeded FERMI FEL (Trieste, Italy) this goal is committed to the optical device known as AC/DC, which stands for the auto correlator/delay creator. AC/DC is designed to double the incoming FEL pulse splitting the photon beam by inserting a grazing incidence flat mirror, thus preserving the spectral and temporal properties, and further delaying one of these two pulses in time. It can independently tune the FEL pulses fluence on the two optical paths by means of solid-state filters, too. Here, we present a detailed description about this optical device. Strong emphasis is dedicated to the AC/DC opto-mechanical design and to the laser-based feedback systems implemented to compensate for any mismatch affecting the FEL optical trajectory, ascribable to both mechanical imperfections and paraxial errors rising during a temporal delay scan.
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Quijada, César. "Special Issue: Conductive Polymers: Materials and Applications." Materials 13, no. 10 (May 20, 2020): 2344. http://dx.doi.org/10.3390/ma13102344.
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Intrinsically conductive polymers (CPs) combine the inherent mechanical properties of organic polymers with charge transport, opto-electronic and redox properties that can be easily tuned up to those typical of semiconductors and metals. The control of the morphology at the nanoscale and the design of CP-based composite materials have expanded their multifunctional character even further. These virtues have been exploited to advantage in opto-electronic devices, energy-conversion and storage systems, sensors and actuators, and more recently in applications related to biomedical and separation science or adsorbents for pollutant removal. The special issue “Conductive Polymers: Materials and Applications” was compiled by gathering contributions that cover the latest advances in the field, with special emphasis upon emerging applications.
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Azizov B.M., B. M., A. N. Badalova, and H. N. Mammadov. "EVALUATION OF CHARACTERISTIC PARAMETERS OF OPTO-ELECTRONIC DEVICES USED IN REMOTE SENSING SYSTEMS." IZVESTIYA SFedU. ENGINEERING SCIENCES, no. 3 (August 16, 2023): 232–40. http://dx.doi.org/10.18522/2311-3103-2023-3-232-240.
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Paez-Sierra, Beynor Antonio, Fredy Mesa, and Anderson Dussan. "Raman Analysis of Vanadyl Phthalocynine Layers for Plastic Electronic Applications." Applied Mechanics and Materials 789-790 (September 2015): 170–75. http://dx.doi.org/10.4028/www.scientific.net/amm.789-790.170.
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Engineering, stability and orientation of semiconducting molecules are necessary to achieve the high efficiency of multifunctional organic-based devices. Several conjugated molecules facilitate the use of external magnetic fields to tailor both their molecular orientation and electronic properties while being processed for bio or opto-electronic applications. In this work, molecular thin films of vanadyl phthalocynine (VOPc) layers forming conducting channels in organic field-effect transistors were investigated. Three systems based on 100 nm thick VOPc thin film were grown, one in absence of magnetic field, while the other two with parallel and perpendicular to the substrate plane, respectively. Devices were ex-situ investigated by electrical characterization and confocal scanning Raman spectroscopy (SRS). All molecular layers growth on Au electrodes presented enhancement of the Raman signal.
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Navarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance." Crystals 10, no. 5 (May 1, 2020): 359. http://dx.doi.org/10.3390/cryst10050359.
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III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended their applicability to spintronic devices. However, in most III-Nitrides the low solubility of the magnetic ions leads to the formation of secondary phases that are often responsible for the observed magnetic behavior of the layers. The present review summarizes the research dedicated to the understanding of the basic properties, from the fabrication to the performance, of III-Nitride-based phase-separated magnetic systems containing embedded magnetic nanostructures as suitable candidates for spintronics applications.
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Xu, Nan, Ze-Di Cheng, Jin-Dao Tang, Xiao-Min Lv, Tong Li, Meng-Lin Guo, You Wang, Hai-Zhi Song, Qiang Zhou, and Guang-Wei Deng. "Recent advances in nano-opto-electro-mechanical systems." Nanophotonics 10, no. 9 (June 28, 2021): 2265–81. http://dx.doi.org/10.1515/nanoph-2021-0082.
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Abstract Nano-opto-electro-mechanical systems (NOEMS), considered as new platforms to study electronic and mechanical freedoms in the field of nanophotonics, have gained rapid progress in recent years. NOEMS offer exciting opportunities to manipulate information carriers using optical, electrical, and mechanical degrees of freedom, where the flow of light, dynamics of electrons, and mechanical vibration modes can be explored in both classical and quantum domains. By exploiting NOEMS concepts and technologies, high speed and low-power consumption switches, high-efficiency microwave-optical conversion devices, and multiple quantum information processing functions can be implemented through on-chip integration. This review will introduce the principles of NOEMS, summarize the recent developments, and important achievements, and give a prospect for the further applications and developments in this field.
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Mohnani, Stefan, Anna Llanes-Pallas, and Davide Bonifazi. "Mastering nanostructured materials through H-bonding recognitions at interfaces." Pure and Applied Chemistry 82, no. 4 (March 20, 2010): 917–29. http://dx.doi.org/10.1351/pac-con-10-01-06.
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The controlled engineering of functional architectures composed of π-systems with unusual opto-electronic properties is currently being investigated intensively from both fundamental research and technological application viewpoints. In particular, the exploitation of the supramolecular approach for the facile construction of multidimensional architectures, featuring cavities capable of hosting functional molecules, could be used in several applications, such as nanomedicine, molecular-based memory storage devices, and sensors. This paper highlights our recent strategies to use hydrogen-bonding interactions to prepare nanostructured functional architectures via the self-assembly of organic molecular modules studied at different interfaces.
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Rani, S., S. Thanka Rajan, J. Shanthi, A. Ayeshamariam, and M. Jayachandran. "Review on the Materials Properties and Photoelctrochemical (PEC) Solar Cells of CdSe, Cd1-xZnxSe, Cd1-xInxSe, Thin Films." Materials Science Forum 832 (November 2015): 1–27. http://dx.doi.org/10.4028/www.scientific.net/msf.832.1.
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CdSe and its Zn/In/suitable element doped films are very important interesting materials for the realization of electronic and photoelectronic devices for energy conversion. The growth of ternary In/Zn/Cd selenides opens up the possibility of their applications for novel opto-electronic devices in the visible region of electromagnetic radiation. The (CdZn)Se and (CdIn)Se systems enable a tunable band gap region between 1.72 and 2.82 eV at normal temperature facilitating the development of several new light emitting diodes, photo detectors, blue green lasers. Thin films of these materials are usually synthesized by molecular beam epitaxy, electron beam evaporation and chemical techniques. Many researchers have reported about these materials prepared by different techniques and their properties as well as their use in PEC cell fabrication mainly followed by other optoelectronic devices also. This review gives an account of all these data in a representative distributed manner so as to cover many decades of published papers in this ever green topic of energy conversion research.
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Branscheid, W., and A. Dobrowolski. "Evaluation of market value: comparison between different techniques applied on pork carcasses (short communication)." Archives Animal Breeding 43, no. 2 (October 10, 2000): 131–38. http://dx.doi.org/10.5194/aab-43-131-2000.
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Abstract. The market value of a carcass in the whole should be represented by the sum of values of all Single cuts dissected from a carcass. These values of the single cuts are defined by their tissue composition and meat quality characteristics (pH, etc.)respectively. The ftxing of market value at the slaughter line requires very quick methods that base on instrumental measurements and electronic data management. Nowadays four technically different types of instruments are available for the determination of market value in Germany. Following instrumental devices are compared and valuated. Opto-electronic devices, Ultrasonic Scanners, Autoform (SFK Company, DK), The video imaging System VCS 2000. These four technical Systems presented in this study give equally good results in predicting the market value of pork carcass. It can State, that the fully automatic devices represent a new stage of development. They are calculating the market value on a great number of measurements and in most aspects with a high reliability.
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Konyakhin, Igor A., Alexander N. Timofeev, and Sergey N. Yaryshev. "High Precision Angular and Linear Measurements Using Universal Opto-Electronic Measuring Modules in Distributed Measuring Systems." Key Engineering Materials 437 (May 2010): 160–64. http://dx.doi.org/10.4028/www.scientific.net/kem.437.160.
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Large or long objects require measuring systems as a combination of more than one measuring instrument. In this case, the combination of instruments consists of one central module and several measuring modules. The measuring modules make the preliminary computation of measuring information and translate it to the central module for final computation of measuring parameters. The central module also makes statistics of measuring and archive information. Some tasks require noncontact measurement of angular and linear coordinates of objects or places. The optoelectronic measuring devices (OEMD) are ideal for these purposes. These devices also have other advantages such as high precision and adaptability. One and two coordinates high precision modules based on matrix and linear CCD or CMOS photo sensors are described. In this article variants of the distributed measuring systems are described. The basic attention is given to the description of the unified optoelectronic modules for measurement of angular and linear coordinates. Basic parameters and application examples of measuring modules are presented.
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Xin, Kaiyao, Xingang Wang, Kasper Grove-Rasmussen, and Zhongming Wei. "Twist-angle two-dimensional superlattices and their application in (opto)electronics." Journal of Semiconductors 43, no. 1 (January 1, 2022): 011001. http://dx.doi.org/10.1088/1674-4926/43/1/011001.
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Abstract Twist-angle two-dimensional systems, such as twisted bilayer graphene, twisted bilayer transition metal dichalcogenides, twisted bilayer phosphorene and their multilayer van der Waals heterostructures, exhibit novel and tunable properties due to the formation of Moiré superlattice and modulated Moiré bands. The review presents a brief venation on the development of “twistronics” and subsequent applications based on band engineering by twisting. Theoretical predictions followed by experimental realization of magic-angle bilayer graphene ignited the flame of investigation on the new freedom degree, twist-angle, to adjust (opto)electrical behaviors. Then, the merging of Dirac cones and the presence of flat bands gave rise to enhanced light-matter interaction and gate-dependent electrical phases, respectively, leading to applications in photodetectors and superconductor electronic devices. At the same time, the increasing amount of theoretical simulation on extended twisted 2D materials like TMDs and BPs called for further experimental verification. Finally, recently discovered properties in twisted bilayer h-BN evidenced h-BN could be an ideal candidate for dielectric and ferroelectric devices. Hence, both the predictions and confirmed properties imply twist-angle two-dimensional superlattice is a group of promising candidates for next-generation (opto)electronics.
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Rao, P. Nageswara, and R. C. Pande. "Design of Optical Systems for Coupling Laser Diode to Single Mode Fibre in Opto-Electronic Devices." IETE Technical Review 7, no. 1 (January 1990): 58–64. http://dx.doi.org/10.1080/02564602.1990.11438583.
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Ilgaz, Mehmet Alp, and Bostjan Batagelj. "Opto-Electronic Oscillators for Micro- and Millimeter Wave Signal Generation." Electronics 10, no. 7 (April 3, 2021): 857. http://dx.doi.org/10.3390/electronics10070857.
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High-frequency signal oscillators are devices needed for a variety of scientific disciplines. One of their fundamental requirements is low phase noise in the micro- and millimeter wave ranges. The opto-electronic oscillator (OEO) is a good candidate for this, as it is capable of generating a signal with very low phase noise in the micro- and millimeter wave ranges. The OEO consists of an optical resonator with electrical feedback components. The optical components form a delay line, which has the advantage that the phase noise is independent of the oscillator’s frequency. Furthermore, by using a long delay line, the phase noise characteristics of the oscillator are improved. This makes it possible to widen the range of possible OEO applications. In this paper we have reviewed the state of the art for OEOs and micro- and millimeter wave signal generation as well as new developments for OEOs and the use of OEOs in a variety of applications. In addition, a possible implementation of a centralized OEO signal distribution as a local oscillator for a 5G radio access network (RAN) is demonstrated.
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Alam, Muhammad Ashraful. "The Physics of Nanonet Fabrics and Its Applications in Electronic, Opto-electronic, Biosensing, Energy Storage, and MEMS Devices and Systems." ECS Transactions 35, no. 3 (December 16, 2019): 55–65. http://dx.doi.org/10.1149/1.3569899.
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Liaqat, Maryam. "Optical Properties of Nano-circuits for Metallic and Non-Metallic Nanoparticles." JOURNAL OF NANOSCOPE (JN) 2, no. 2 (December 31, 2021): 113–19. http://dx.doi.org/10.52700/jn.v2i2.46.
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Optical properties of the nanoparticles can be studied theoretically by using the lumped electronic components. The particles having >0 behaved as capacitor whereas for <0 had inductor properties on the other hand the electric field perpendicular to the components then the properties of series combinations dominates and vice versa. A first principles electronic structure based method is presented to determine the equivalent circuit representations of nanostructured physical systems at optical frequencies, via a mapping of the effective permittivity calculated for a lattice of physical nano-elements using density functional theory to that calculated for a lattice of impedances using circuit theory. Specifically, it is shown that silicon nanowires and carbon nanotubes can be represented as series combinations of inductance, capacitance and resistance. It is anticipated that the generality of this approach will allow for an alternate description of physical systems at optical frequencies, and in the realization of novel opto and nanoelectronic devices, including negative refractive index materials.
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Zou, Shizan, Hengyuan Wang, Jianhang Guo, Sai Jiang, Ziqian Hao, Mengjiao Pei, Xin Xu, et al. "Asymmetric electrode geometry induced photovoltaic behavior for self-powered organic artificial synapses." Flexible and Printed Electronics 6, no. 4 (December 1, 2021): 044009. http://dx.doi.org/10.1088/2058-8585/ac442f.
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Abstract Opto-electronic synapses have attracted considerable attention because of their promising potential in artificial visual perception systems for neuromorphic computing. Despite remarkable progress in mimicking synaptic functions, reduction of energy consumption of artificial synapses is still a substantial obstacle that is required to be overcome to promote advanced emerging applications. Herein, we propose a zero-power artificial optoelectrical synapses using ultrathin organic crystalline semiconductors, which can be self-driven by exploiting the photovoltaic effect induced by asymmetric electrode geometry contacts. The photogenerated charge carrier collection at the two electrodes is unbalanced due to the asymmetric contacts, leading to the in-plane current without bias voltage. Our devices successfully mimic a range of important synaptic functions, such as paired-pulse facilitation and spike rate-dependent plasticity. Furthermore, we demonstrate that our devices can realize the simulation of image sharpening under self-driven optical-sensing synaptic operations, offering prospects for the development of retinomorphic visual systems.
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Westwood, A. D. "Application of AEM to chemical and structural characterization of the AlN-Al2O3 and AlN-Al2O3-SiO2 Systems." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 318–19. http://dx.doi.org/10.1017/s0424820100137963.
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The thermal, electronic and mechanical properties of aluminum nitride (A1N) make it an attractive material to a number of technologically important areas; microelectronic packaging, high temperature semiconductors, opto-electronic and piezoelectric devices and structural ceramics. It is well established that the concentration and distribution of impurities can control the macroscopic properties of materials. A1N is a classic example, with oxygen (O) being the dominant controlling impurity. The role of O in point defect formation and its detrimental effect on thermal conductivity was first documented by Slack. Oxygen has subsequently been shown to cause the formation of two-dimensional extended defects of which two variants exist, planar and curved. Both defects have been identified as O-rich inversion domain boundaries (IDB´s) (Fig.l). Because of the controlling influence that O has on thermal conductivity, it is important to fully understand the defect structures and chemistries that exist as a result of O incorporation. A1N-A12O3 is a prototype system for understanding the role that non-stoichiometry (impurities) plays in IDB formation.
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Jia, Yaoyao, Yan Gong, Arthur Weber, Wen Li, and Maysam Ghovanloo. "A mm-Sized Free-Floating Wireless Implantable Opto-Electro Stimulation Device." Micromachines 11, no. 6 (June 25, 2020): 621. http://dx.doi.org/10.3390/mi11060621.
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Towards a distributed neural interface, consisting of multiple miniaturized implants, for interfacing with large-scale neuronal ensembles over large brain areas, this paper presents a mm-sized free-floating wirelessly-powered implantable opto-electro stimulation (FF-WIOS2) device equipped with 16-ch optical and 4-ch electrical stimulation for reconfigurable neuromodulation. The FF-WIOS2 is wirelessly powered and controlled through a 3-coil inductive link at 60 MHz. The FF-WIOS2 receives stimulation parameters via on-off keying (OOK) while sending its rectified voltage information to an external headstage for closed-loop power control (CLPC) via load-shift-keying (LSK). The FF-WIOS2 system-on-chip (SoC), fabricated in a 0.35-µm standard CMOS process, employs switched-capacitor-based stimulation (SCS) architecture to provide large instantaneous current needed for surpassing the optical stimulation threshold. The SCS charger charges an off-chip capacitor up to 5 V at 37% efficiency. At the onset of stimulation, the capacitor delivers charge with peak current in 1.7–12 mA range to a micro-LED (µLED) array for optical stimulation or 100–700 μA range to a micro-electrode array (MEA) for biphasic electrical stimulation. Active and passive charge balancing circuits are activated in electrical stimulation mode to ensure stimulation safety. In vivo experiments conducted on three anesthetized rats verified the efficacy of the two stimulation mechanisms. The proposed FF-WIOS2 is potentially a reconfigurable tool for performing untethered neuromodulation.
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Zamboni, Riccardo, Annamaria Zaltron, Elena Izzo, Gregorio Bottaro, Davide Ferraro, and Cinzia Sada. "Opto-Microfluidic System for Absorbance Measurements in Lithium Niobate Device Applied to pH Measurements." Sensors 20, no. 18 (September 19, 2020): 5366. http://dx.doi.org/10.3390/s20185366.
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The aim of Lab-on-a-chip systems is the downscaling of analytical protocols into microfluidic devices, including optical measurements. In this context, the growing interest of the scientific community in opto-microfluidic devices has fueled the development of new materials. Recently, lithium niobate has been presented as a promising material for this scope, thanks to its remarkable optical and physicochemical properties. Here, we present a novel microfluidic device realized starting from a lithium niobate crystal, combining engraved microfluidic channels with integrated and self-aligned optical waveguides. Notably, the proposed microfabrication strategy does not compromise the optical coupling between the waveguides and the microchannel, allowing one to measure the transmitted light through the liquid flowing in the channel. In addition, the device shows a high versatility in terms of the optical properties of the light source, such as wavelength and polarization. Finally, the developed opto-microfluidic system is successfully validated as a probe for real-time pH monitoring of the liquid flowing inside the microchannel, showing a high integrability and fast response.
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Moradi, Mina, Nadia L. Opara, Ludovico G. Tulli, Christian Wäckerlin, Scott J. Dalgarno, Simon J. Teat, Milos Baljozovic, et al. "Supramolecular architectures of molecularly thin yet robust free-standing layers." Science Advances 5, no. 2 (February 2019): eaav4489. http://dx.doi.org/10.1126/sciadv.aav4489.
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Stable, single-nanometer thin, and free-standing two-dimensional layers with controlled molecular architectures are desired for several applications ranging from (opto-)electronic devices to nanoparticle and single-biomolecule characterization. It is, however, challenging to construct these stable single molecular layers via self-assembly, as the cohesion of those systems is ensured only by in-plane bonds. We herein demonstrate that relatively weak noncovalent bonds of limited directionality such as dipole-dipole (–CN⋅⋅⋅NC–) interactions act in a synergistic fashion to stabilize crystalline monomolecular layers of tetrafunctional calixarenes. The monolayers produced, demonstrated to be free-standing, display a well-defined atomic structure on the single-nanometer scale and are robust under a wide range of conditions including photon and electron radiation. This work opens up new avenues for the fabrication of robust, single-component, and free-standing layers via bottom-up self-assembly.
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Cachaneski-Lopes, João P., and Augusto Batagin-Neto. "Effects of Mechanical Deformation on the Opto-Electronic Responses, Reactivity, and Performance of Conjugated Polymers: A DFT Study." Polymers 14, no. 7 (March 26, 2022): 1354. http://dx.doi.org/10.3390/polym14071354.
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The development of polymers for optoelectronic applications is an important research area; however, a deeper understanding of the effects induced by mechanical deformations on their intrinsic properties is needed to expand their applicability and improve their durability. Despite the number of recent studies on the mechanochemistry of organic materials, the basic knowledge and applicability of such concepts in these materials are far from those for their inorganic counterparts. To bring light to this, here we employ molecular modeling techniques to evaluate the effects of mechanical deformations on the structural, optoelectronic, and reactivity properties of traditional semiconducting polymers, such as polyaniline (PANI), polythiophene (PT), poly (p-phenylene vinylene) (PPV), and polypyrrole (PPy). For this purpose, density functional theory (DFT)-based calculations were conducted for the distinct systems at varied stretching levels in order to identify the influence of structural deformations on the electronic structure of the systems. In general, it is noticed that the elongation process leads to an increase in electronic gaps, hypsochromic effects in the optical absorption spectrum, and small changes in local reactivities. Such changes can influence the performance of polymer-based devices, allowing us to establish significant structure deformation response relationships.
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Oliynik, R., S. Tsilyna, and O. Yermolenko. "IMPROVEMENT OF OPTICAL-ELECTRONIC MEANS FOR INCREASE OF EFFICIENCY OF COMBAT EMPLOYMENT OF THE ARMORED WEAPONS UNDER LIMITED VISIBILITY CONDITIONS." Наукові праці Державного науково-дослідного інституту випробувань і сертифікації озброєння та військової техніки, no. 6 (December 30, 2020): 62–69. http://dx.doi.org/10.37701/dndivsovt.6.2020.07.
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According to the experience of hostilities, including during the JFO (ATO), today much attention is paid by military experts to the development and improvement of optical and optoelectronic devices. This is due to the continuous improvement and development of new generation weapons systems that have improved tactical and technical characteristics, reduces the time spent by objects in the area of detection and damage, reduces the visibility of objects, increases their protection from interference and countermeasures, changes their tactics.
The main advantages of optoelectronic devices are: the secrecy of their use, in contrast to radar and radio equipment, they do not require additional systems of protection against interference; relative simplicity of design, operation and small dimensions; low energy consumption; ecological purity.
The current state of threats to Ukraine's sovereignty and territorial integrity, first of all the ongoing aggression of the Russian Federation, requires the introduction of necessary ways to counter them, improving approaches to the formation of military-technical policy, taking into account the urgent need to update existing weapons and military (special) equipment.
There is a need to create electron-optical transducers or matrix devices of other types that work in the visible and infrared ranges, for night vision devices, and opto-electronic systems for detection (registration) of laser radiation of rangefinders, control systems for homing projectiles, missiles in the optical range spectrum.
The paper describes the areas of improvement of optoelectronic means of surveillance, detection and aiming in order to increase the effectiveness of combat employment of armored weapons. The relevance of the study lies in the need to introduce fundamentally new concepts for the integration of optical and optoelectronic devices.
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Nakayama, Yasuo. "(Invited, Digital Presentation) Epitaxial Organic Molecular Interfaces As Well-Ordered Model Systems for Molecular Semiconductor p-n Junctions for Optoelectronic Applications." ECS Meeting Abstracts MA2022-01, no. 13 (July 7, 2022): 907. http://dx.doi.org/10.1149/ma2022-0113907mtgabs.
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Donor-acceptor molecular interfaces are nothing but p-n junctions for organic optoelectronic devices such as organic light emitting diodes and organic solar cells where an exciton forms or dissociates. Understanding about dominating factors determining the intermolecular assembly and charge carrier exchange processes are highly anticipated for the establishment of smart design strategies of practically efficient devices. Molecular heterojunctions built on single crystal organic semiconductors provide well-ordered model systems disentangling complex intermolecular contacts in real devices. Moreover, the p-n junctions of highly ordered molecular assembly lead to the enhancement of the mobility of charge carriers and excitons through the inter-molecular delocalization of the electronic states, which potentially opens a new route for efficient optoelectronic applications of molecular semiconductors. In this contribution, crystallographic and electronic structures of well-ordered molecular semiconductor homo- and hetero-epitaxial junctions are overviewed. One representative system is a “complementary” p-n junction of perfluoropentacene (C22F14) crystalline ad-layers formed on the single crystal pentacene (C22H14) [1]. Grazing-incidence X-ray diffraction (GIXD) analyses revealed hetero-epitaxial growth of perfluoropentacene in a uniform crystallographic orientation with respect to the surface lattice of the single crystal pentacene. The energy-momentum dispersions of inter-molecular electronic bands were successfully demonstrated by angle-resolved photoelectron spectroscopy (ARPES) for the hetero-epitaxial perfluoropentacene as well as for the single crystal pentacene, which strongly suggests realization of the delocalization of electrons and holes across this well-ordered molecular p-n junction. To further improve the crystallinity of the epitaxial molecular heterojunctions, the authors’ group proposed a new concept of “quasi-homoepitaxial organic semiconductor junctions”, at which a molecular species with nearly identical in-plane lattice constants to those of the substrate molecular single crystal surface is stacked [2]. Actually, quasi-homoepitaxial crystallites of bis(trifluoromethyl)dimethylrubrene was revealed to form highly-ordered interface of much improved mean crystallite size on the single crystal surface of (unsubstituted) rubrene by means of high-resolution GIXD. The electronic structures exhibiting spontaneous electron transfer at this inter-molecular contact and possible opto-electronic applications of this quasi-homoepitaxial junction are also discussed in this presentation. This contribution is supported by Grant-in Aids for Transformative Research Areas (A) “Dynamic Exciton: Emerging Science and Innovation” (JSPS-KAKENHI Grant Number JP21H05405). [1] Y. Nakayama, et al., J. Phys. Chem. Lett. 10 (2019) 1312. [2] K. Takahashi, et al., J. Phys. Chem. Lett. 12 (2021) 11430.
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Mescheder, Ulrich, Michael Lootze, and Khaled Aljasem. "Evaluation and Optimization of a MOEMS Active Focusing Device." Micromachines 12, no. 2 (February 9, 2021): 172. http://dx.doi.org/10.3390/mi12020172.
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In this paper we present a detailed evaluation of a micro-opto-electromechanical system (MOEMS) for active focusing which is realized using an electrostatically deformed thin silicon membrane. The evaluation is done using finite element methods and experimental characterization of the device behavior. The devices are realized in silicon on insulator technology. The influence of internal stress especially resulting from the high compressive buried oxide (BOX) layer is evaluated. Additionally, the effect of stress gradients in the crystalline device layer and of high reflective coatings such as aluminum is discussed. The influence of variations of some important process steps on the device performance is quantified. Finally, practical properties such as focal length control, long-term stability, hysteresis and dynamical response are presented and evaluated. The evaluation proves that the proposed membrane focusing device is suitable for high performance imaging (wavefront errors between λ/5–λ/10) with a large aperture (5 mm).
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Theurer, Christoph P., Antonia Weber, Martin Richter, Markus Bender, Patrick Michel, Debkumar Rana, Krishan Kumar, et al. "Short-range organization and photophysical properties of CdSe quantum dots coupled with aryleneethynylenes." Nanotechnology 33, no. 23 (March 17, 2022): 230001. http://dx.doi.org/10.1088/1361-6528/ac52bd.
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Abstract Hybrid organic–inorganic nanomaterials composed of organic semiconductors and inorganic quantum dots (QDs) are promising candidates for opto-electronic devices in a sustainable internet of things. Especially their ability to combine the advantages of both compounds in one material with new functionality, the energy-efficient production possibility and the applicability in thin films with little resource consumption are key benefits of these materials. However, a major challenge one is facing for these hybrid materials is the lack of a detailed understanding of the organic–inorganic interface which hampers the widespread application in devices. We advance the understanding of this interface by studying the short-range organization and binding motif of aryleneethynylenes coupled to CdSe QDs as an example system with various experimental methods. Clear evidence for an incorporation of the organic ligands in between the inorganic QDs is found, and polarization-modulation infrared reflection-absorption spectroscopy is shown to be a powerful technique to directly detect the binding in such hybrid thin-film systems. A monodentate binding and a connection of neighboring QDs by the aryleneethynylene molecules is identified. Using steady-state and time resolved spectroscopy, we further investigated the photophysics of these hybrid systems. Different passivation capabilities resulting in different decay dynamics of the QDs turned out to be the main influence of the ligands on the photophysics.
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Liu, Daoqun, Peng Zhang, Bo Tang, Wenwu Wang, and Zhihua Li. "High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region." Micromachines 13, no. 5 (April 19, 2022): 649. http://dx.doi.org/10.3390/mi13050649.
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High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration. The device can work at low voltage and high speed with a lateral multiplication region without complexity of the charge layer. The proposed device is implemented by the complementary metal-oxide-semiconductor (CMOS) process in the 8-inch Si photonics platform. The device has a low breakdown voltage of 12 V and shows high responsivity of 15.1 A/W at 1550 nm wavelength under optical power of −22.49 dBm, corresponding to a multiplication gain of 18.1. Moreover, an opto-electrical bandwidth of 20.7 GHz is measured at 10.6 V. The high-speed performance at low voltage shows a great potential to implement high-energy-efficient Si optical communications and interconnections.
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Parreira, N. M. G., Y. T. Pei, D. Galvan, T. Polcar, J. Th M. De Hosson, and A. Cavaleiro. "TEM Characterization of W-O-N Coatings." Microscopy and Microanalysis 14, S3 (September 2008): 27–30. http://dx.doi.org/10.1017/s1431927608089289.
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Recently, a new class of coatings based on oxynitrides has drawn much attention in the research field as well as in industrial applications, as shown by either the large numbers of recent publications on TM O N systems (TM—transition metal) such as Ti-O-N, Zr-O-N and Ta-O-N, or the development of Si O-N for opto-electronic devices. The properties of these coatings are related to the chemical composition and the structural arrangement. However, the knowledge about the structure of TM-O-N systems is very limited, especially how the structural arrangement of the non-metallic elements is in the lattices. To the best of our knowledge, only a few studies exist on the development of structural models for oxynitrides, based on XRD and/or XPS analysis, as e.g. Si-O-N and Ti-O-N, or on Mössbauer spectrometry for Fe-O-N. TEM was used scarcely for the characterization of TM-O-N coatings possibly due to the damage of the structure by the electron-irradiation as it is reported for Cr-O-N. This work is aimed at the crystallographic understanding of W-O-N sputtered films by using TEM and HR TEM techniques for complementing the information provided by XRD characterization.
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Irshad, Reyazur Rashid, Sultan Ahmad, Zainulabedin Hasan Muhammed, Abdallah Ahmed Alzupair Ahmed, and Ahmed Abdu Alattab. "Intelligent Healthcare Provided by Nano-Enhanced Biosensing Systems: Progress in COVID-19 Management via the Artificial Neural Network Approach." Journal of Nanoelectronics and Optoelectronics 17, no. 11 (November 1, 2022): 1459–68. http://dx.doi.org/10.1166/jno.2022.3352.
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Biosensors using opto electronics mechanisms are evolving as efficient (sensitive and selective) and low-cost analytical diagnostic devices for early-stage disease diagnosis, which is crucial for person-centered health and wellness management. Due to advancements in nanotechnology in the areas of sensing unit fabrication, device integration, interfacing, packaging, and sensing performance at the point-of-care (POC), personalized diagnostics are now possible, allowing doctors to tailor tests to each patient’s unique disease profile and management requirements. Innovative biosensing technology is being pushed as the diagnostic tool of the future because of its potential to provide accurate results without requiring intrusive procedures. Because of this, this visionary piece of writing explores analytical methods for managing personalised health care that can enhance the health of the general population. The end goal is to take control of a healthier tomorrow as soon as possible. Right now, the most crucial part of controlling the COVID-19 pandemic, a potentially fatal respiratory viral disease, is the rapid, specific, and sensitive detection of human beta severe acute respiratory system coronavirus (SARS-CoV-2) protein.
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Mireles, José, Ángel Sauceda, Abimael Jiménez, Manuel Ramos, and Rafael Gonzalez-Landaeta. "Design and Development of a MOEMS Accelerometer Using SOI Technology." Micromachines 14, no. 1 (January 16, 2023): 231. http://dx.doi.org/10.3390/mi14010231.
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The micro-electromechanical system (MEMS) sensors are suitable devices for vibrational analysis in complex systems. The Fabry–Pérot interferometer (FPI) is used due to its high sensitivity and immunity to electromagnetic interference (EMI). Here, we present the design, fabrication, and characterization of a silicon-on-insulator (SOI) MEMS device, which is embedded in a metallic package and connected to an optical fiber. This integrated micro-opto-electro-mechanical system (MOEMS) sensor contains a mass structure and handle layers coupled with four designed springs built on the device layer. An optical reading system using an FPI is used for displacement interrogation with a demodulation technique implemented in LabVIEW®. The results indicate that our designed MOEMS sensor exhibits a main resonant frequency of 1274 Hz with damping ratio of 0.0173 under running conditions up to 7 g, in agreement with the analytical model. Our experimental findings show that our designed and fabricated MOEMS sensor has the potential for engineering application to monitor vibrations under high-electromagnetic environmental conditions.
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Shaban, Muhammad, Hamza Khalid, Muhammad Adnan, Majid Naseem, and Adeeba Noshahi. "New Insights and Latest Developments in Different Disciplines of Physics through Nanotechnology." Scholars Bulletin 8, no. 3 (March 22, 2022): 106–10. http://dx.doi.org/10.36348/sb.2022.v08i03.006.
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Recent advances in physics have been made through nanotechnology that employed the nanoparticles and provide the physical and chemical basis studies of various compounds. In this regards, various branches of physical such as atomic, molecular, nuclear, thermodynamics and photonics all also made several recent perspectives in their main areas. Many photonics based objected have been designed through advances in nanotechnology for example, nature of opto-electronics as it now becomes possible to imagine using coherent light produced on a chip to control electronic interactions on the same chip. The new technologies are focusing on the development of quantum physics has applied to the nanoscale systems in order to understand the as quantum sensing. Molecular physics associated with combinations of the nanoparticles intergraded with atoms and hybrid systems that would be helpful for the ultrasensitive sensor devices that are most efficient and no environmental hazards while some of the old and traditionally used devices and machines are poorly understood with noise pollution and no significant in their preparations. As, quantum computing is based on physical materials, the choice of material is important and semiconductor materials. The newly solar cell technology has been also folding the nanoparticles coating to the adhered materials of the solid surfaces for when surface plasmon is located in front of a solar cell. Microwave plasma-enhanced also applied for the different applications of diamond films. X-ray diffraction for thermodynamic based materials also important because of the some phenomenon happening in nature deals with heat, work and temperature, and their relation to energy.
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Lisik, Zbigniew, Ewa Raj, and Jacek Podgórski. "Numerical Model of Current Flow and Thermal Phenomena in Lateral GaN/InGaN LEDs." Electronics 10, no. 24 (December 16, 2021): 3127. http://dx.doi.org/10.3390/electronics10243127.
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GaN-based light-emitting diodes (LEDs) became one of the most widely used light sources. One of their key factors is power conversion efficiency; hence, a lot of effort is placed on research to improve this parameter, either experimentally or numerically. Standard approaches involve device-oriented or system-oriented methods. Combining them is possible only with the aid of compact, lumped parameter models. In the paper, we present a new electro-thermal model that covers all the complex opto-electro-thermal phenomena occurring within the operating LED. It is a simple and low computational cost solution that can be integrated with package- or system-oriented numerical analysis. It allows a parametric analysis of the diode structure and properties under steady-state operating conditions. Its usefulness has been proved by conducting simulations of a sample lateral GaN/InGaN LED with the aid of ANSYS software. The results presented illustrate the current density and temperature fields. They allow the identification of ‘hot spots’ resulting from the current crowding effect and can be used to optimise the structure.
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Vafapour, Zohreh. "Cost-Effective Bull’s Eye Aperture-Style Multi-Band Metamaterial Absorber at Sub-THz Band: Design, Numerical Analysis, and Physical Interpretation." Sensors 22, no. 8 (April 9, 2022): 2892. http://dx.doi.org/10.3390/s22082892.
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Theoretical and numerical studies were conducted on plasmonic interactions at a polarization-independent semiconductor–dielectric–semiconductor (SDS) sandwiched layer design and a brief review of the basic theory model was presented. The potential of bull’s eye aperture (BEA) structures as device elements has been well recognized in multi-band structures. In addition, the sub-terahertz (THz) band (below 1 THz frequency regime) is utilized in communications and sensing applications, which are in high demand in modern technology. Therefore, we produced theoretical and numerical studies for a THz-absorbing-metasurface BEA-style design, with N-beam absorption peaks at a sub-THz band, using economical and commercially accessible materials, which have a low cost and an easy fabrication process. Furthermore, we applied the Drude model for the dielectric function of semiconductors due to its ability to describe both free-electron and bound systems simultaneously. Associated with metasurface research and applications, it is essential to facilitate metasurface designs to be of the utmost flexible properties with low cost. Through the aid of electromagnetic (EM) coupling using multiple semiconductor ring resonators (RRs), we could tune the number of absorption peaks between the 0.1 and 1.0 THz frequency regime. By increasing the number of semiconductor rings without altering all other parameters, we found a translation trend of the absorption frequencies. In addition, we validated our spectral response results using EM field distributions and surface currents. Here, we mainly discuss the source of the N-band THz absorber and the underlying physics of the multi-beam absorber designed structures. The proposed microstructure has ultra-high potentials to utilize in high-power THz sources and optical biomedical sensing and detection applications based on opto-electronics technology based on having multi-band absorption responses.
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Levchenko, V., I. Shulga, А. Romanyuk, and L. Bezverkha. "USE OF REMOTE GEOINFORMATION TECHNOLOGIES FOR FOREST PATHOLOGY MONITORING IN THE ZHYTOMYR POLISSYA." Innovative Solution in Modern Science 2, no. 38 (March 30, 2020): 20. http://dx.doi.org/10.26886/2414-634x.2(38)2020.3.
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Topical issues of remote assessment of the forest pathological condition of forests are substantiated, in particular, it is emphasized that today this type of decryption is the least developed link in the section of forest decoding. This is due to the unstable manifestation and diagnosis on the materials of aeronautical surveys of signs of deciphering trees and plantations of varying degrees of attenuation and drying. Forest decoding of aerospace imagery materials today is the process of recognizing aerial objects depicted on aerospace images and establishing their quantitative and qualitative characteristics. The subject of the work is the fundamental aspects of forest decoding, which in turn can be visual (eye, analytical), measuring, automatic (machine), as well as complex-analytical or automated (interactive). For all types of visual decoding of the investigated forest objects, as a rule, characterize, on the basis of decryption signs, its image on an aerial photo or space picture (on paper or computer screen) with the naked eye or by means of magnifying or stereoscopic devices. Therefore, methodological correctness and clarity in deciphering satellite images of forest arrays obtained through satellite communication channels is quite important today, using satellite and internet technologies. The purpose of the study is to study and systematize materials for deciphering geoinformation images of forests that were obtained by satellite sounding of forests in Ukraine as a whole, and in the Zhytomyr region in particular. The main methods of carrying out the works are the computational-analytical on the collection and processing of the results of space images of satellite sounding of forests located in the territory of Zhytomyr region. In addition, it should be noted that remote satellite sensing of forests enables, with the correct methodological decryption of space images, not only to monitor, but also to make a prediction of the spread of harmful organisms in the forests of Zhytomyr region. The main methods of carrying out the works are the computational-analytical on the collection and processing of the results of space images of satellite sounding of forests located in the territory of Zhytomyr region. In addition, it should be noted that remote satellite sensing of forests enables, with the correct methodological decryption of space images, not only to monitor, but also to make a prediction of the spread of harmful organisms in the forests of Zhytomyr region. According to the results of the work, it is established that the information from the aerospace image is read and analyzed by means of visual and logical devices of the decoder. Therefore, analytical decryption, and especially with the use of certified computer software, allows not only a high-quality reading of space images of forest covered areas of Zhytomyr region, but also to make a long-term forecast for the spread and spread of pests and diseases of the forest in a certain area. The scope of the research results are forestry enterprises of the Zhytomyr Regional Forestry and Hunting Directorate, Ecological and Naturalistic Centers, State environmental inspections including in the Zhytomyr region for space monitoring of the state of forest ecosystems, as well as conducting forestry and nature activities forest of Zhytomyr Polesie. The conclusions of the research are that in Zhytomyr Polissya, when measuring decryption, all or some of the parameters and characteristics of the decrypted objects are measured in pictures using mechanical, opto-mechanical, opto-electronic and other measuring instruments, devices, devices and systems. In analytical-measuring decryption, a visual-logical analysis of the image is combined with the measurement of different parameters of the decrypted objects. Automatic decryption is based on the recognition of spectral and morphometric characteristics of decrypted objects, their quantitative and qualitative indicators. In this case, the decryption process is performed using image processing equipment. The role of the individual is to create a system, define a specific task and process the captured information with the help of appropriate programs, and to maintain the normal functioning of the system. Automated (interactive) decryption combines elements of analytic-measuring, performed by the decryptor-operator on the image on the computer screen, with automatic decryption. In this case, the collected information is analyzed and processed using technical means of image processing with the active participation of the decoder. Depending on the location, the decryption can be field, camera (laboratory), aerial or combined. Field decryption is carried out directly on the ground by comparing the image on aerial or space images with nature. The field decryption method is the simplest and most accurate, but it takes a lot of time and labor. Cameral decryption is carried out in the laboratory, while reducing the cost of engineering staff and workers, there is an acceleration of work and a significant reduction in their cost. Camera decryption is always done with the help of additional cartographic, regulatory and other stock materials. Aero-visual decryption is performed by comparing images of identified objects in aerial or space imagery with terrain when flying on planes or helicopters. The analysis of the informative content of the shooting materials shows that their practical application is possible, as a rule, on the basis of a rational combination of methods of terrestrial and remote observations.Keywords: remote evaluation, forest pathological condition, aerial photos, aerial photos, remote satellite sounding of forests, signs of decryption, space monitoring of forests in Zhytomyr region.
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Jordan, A. S., and V. Swaminathan. "The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials." MRS Proceedings 226 (1991). http://dx.doi.org/10.1557/proc-226-117.
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AbstractThe thermo-mechanical properties of III-V semiconductors, in general, and of GaAs and InP in particular, are reviewed. They play an important role in many aspects of semiconductor device fabrication starting from the growth of bulk crystals. Dislocation generation in GaAs and InP are discussed with the emphasis on the theoretical and experimental aspects of reducing the dislocation density in these materials. Such mechanical properties as glide systems, critical resolved shear stress and impurity hardening are covered. The effects of dislocations on device performance are illustrated with examples from photonic and electronic devices. Finally, the effect of thermomechanical stresses in the degradation and reliability of GaAs/AlGaAs and InP/InGaAsP based opto-electronic devices is considered.
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"An Ultra-CompactOptical Modulator using Indium Tin Oxide Materialand Metal-Dielectric-Metal Waveguide Structure." International Journal of Engineering and Advanced Technology 8, no. 6 (August 30, 2019): 463–66. http://dx.doi.org/10.35940/ijeat.e7859.088619.
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These days Ultra-compact modulators are seeking so much interest in their research area, because these are the main components of optical transmission systems and also Ultracompact and ultra- high speed semiconductor electronic modulators are very significant for optoelectronic integrated circuits. The resonant modulators can be of very small size therefor we have proposed a compactIndium Tin Oxide (ITO) based Opto- Electronic Modulator in a Metal-Dielectric-Metal Plasmonic Waveguide Structure and utilizing resonance property in the device. The device has dimension of 0.01 μm3 and shows modulation depth approximately 9 dB near telecommunication wavelength of 1.5 μm. All the calculations had been done using Finite Element Method (FEM). We have also studied the applications of the device as a tunable filter near the telecommunication wavelength. Performance of the suggested device is quite acceptable with comparison to device size and considered valuable for photonic integrated circuit.
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Mompeán, Juan, Juan L. Aragón, and Pablo Artal. "Energy-efficient design of a presbyopia correction wearable powered by mobile GPUs and FPGAs." Journal of Supercomputing, February 16, 2022. http://dx.doi.org/10.1007/s11227-022-04332-7.
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AbstractThis paper presents an energy-efficient design and evaluation of a novel portable device for the automatic correction of presbyopia in human eyes driven by the use of opto-electronic lenses and based on the dynamic pupil response of the subject. Due to the wearable nature of the proposed Dynamic Auto–Accommodation Glasses, in addition to the real-time requirement, an energy-efficient implementation is critical for the success of the device. In this work, the binocular pupil tracking of a subject, followed by the calculation of the eyes’ vergence, and the control of a pair of opto-electronic lenses are implemented and evaluated on several hardware platforms, including two mobile GPU/SoCs, a high-end FPGA, a low-cost FPGA, and a desktop GPU (as a reference point). The pupil tracking algorithm has been parallelized, applying different platform-specific optimizations for each case, to design a fast yet energy-efficient wearable. The hardware platforms have been evaluated to determine which one is the most appropriate for the presbyopia correction task. The experimental results show that the most energy-efficient platform is a mobile GPU (Samsung Exynos 8890) capable of processing frames at 0.016 Joules/frame, still allowing real-time processing (24 frames/sec).
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Das, Dhruba, Rahul Raj, Jayanta Jana, Subhajit Chatterjee, Lakshmi Ganapathi Kolla, Maneesh Chandran, and M. S. Ramachandra Rao. "Diamond - The Ultimate Material for Exploring Physics of Spin-defects for Quantum Technologies and Diamontronics." Journal of Physics D: Applied Physics, May 6, 2022. http://dx.doi.org/10.1088/1361-6463/ac6d89.
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Abstract Diamond due to its outstanding optical, electrical, mechanical and thermal properties finds an important place in electronic, opto-electronic and quantum technologies. Recent progresses showing superconductivity in diamond by boron doping has opened up many avenues including its applications in SQUID devices especially with polycrystalline diamond films. Granular boron doped diamond films find applications in quantum inductance devices where high surface inductance is required. Particularly important are the defect centers in diamond like nitrogen-vacancy (N-V), silicon vacancy (SiV) and other color centres which are ideal candidates for next generation quantum hardware systems. For efficient device applications, an indispensable need remains for a substitutional donor in diamond lattice that yields a lower thermal activation energy at room temperature. In this review, a comprehensive summary of research and the technological challenges has been reported including some of our latest results on nitrogen doping in polycrystalline diamond to understand the transport phenomenon emphasizing on its possible future applications.
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Mukherjee, Subhrajit, Debopriya Dutta, Michael Uzhansky, and Elad Koren. "Monolithic In2Se3–In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs." npj 2D Materials and Applications 6, no. 1 (May 26, 2022). http://dx.doi.org/10.1038/s41699-022-00309-5.
Full textAbstract:
AbstractStable ferroelectricity at room-temperature down to the monolayer limit, harnessed with strong sensitivity towards visible-to-near-infrared illumination in α-In2Se3, facilitates its potential as versatile building block for developing ultrathin multifunctional photonic integrated networks. Herein, we demonstrated a planar ferroelectric-semiconductor heterojunction (FeS-HJ) field-effect transistor (FET) fabricated out of α-In2Se3 and In2O3, where the ferroelectric-polarization state in α-In2Se3 is utilized to control the device characteristics. The robust in-plane (IP) polarization flipping triggered by out-of-plane (OOP) electrostatic field along with clear anticlockwise hysteresis loop were readily revealed by scanning Kelvin-probe force microscopy (KPFM) and electrical probing. The orthogonally tangled ferroelectric switching was used to manipulate the HJ channel conductance and thereby to realize non-volatile memory (NVM) states. Moreover, gate-tuneable diode-like characteristics and superior photoresponse in HJ compared to its individual constitutes were observed. Utilizing the concurrent ferro-photonic coupling, high bandwidth optical inputs further tailored the outputs into four distinguished current states induced by different polarization directions. Our results pave the way for developing advanced (opto) electronic devices with diverse signal modulation capability to realize next generation low-power neurocomputing, brain-inspired visionary systems, and on-chip optical communications.
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Zhang, Xu, Hoang Nguyen, Xiang Zhang, Pulickel M. Ajayan, Jianguo Wen, and Horacio D. Espinosa. "Atomistic measurement and modeling of intrinsic fracture toughness of two-dimensional materials." Proceedings of the National Academy of Sciences 119, no. 45 (November 4, 2022). http://dx.doi.org/10.1073/pnas.2206756119.
Full textAbstract:
Quantifying the intrinsic mechanical properties of two-dimensional (2D) materials is essential to predict the long-term reliability of materials and systems in emerging applications ranging from energy to health to next-generation sensors and electronics. Currently, measurements of fracture toughness and identification of associated atomistic mechanisms remain challenging. Herein, we report an integrated experimental–computational framework in which in-situ high-resolution transmission electron microscopy (HRTEM) measurements of the intrinsic fracture energy of monolayer MoS 2 and MoSe 2 are in good agreement with atomistic model predictions based on an accurately parameterized interatomic potential. Changes in crystalline structures at the crack tip and crack edges, as observed in in-situ HRTEM crack extension tests, are properly predicted. Such a good agreement is the result of including large deformation pathways and phase transitions in the parameterization of the inter-atomic potential. The established framework emerges as a robust approach to determine the predictive capabilities of molecular dynamics models employed in the screening of 2D materials, in the spirit of the materials genome initiative. Moreover, it enables device-level predictions with superior accuracy (e.g., fatigue lifetime predictions of electro- and opto-electronic nanodevices).
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Stadler, B. J., K. Vaccaro, A. Davis, E. A. Martin, G. O. Ramseyer, and J. P. Lorenzo. "Characterization of Magneto-Optical Rare Earth-Doped Ingaasp Thin Films on InP." MRS Proceedings 392 (1995). http://dx.doi.org/10.1557/proc-392-235.
Full textAbstract:
AbstractWe have investigated the properties of rare earth-doped InGaAsP thin films with special interest in magneto-optical device applications. Magneto-optical properties have been used in optical systems as isolators, waveguides, and switches. These materials and devices can be used to expand the functionality of InP opto-electronic integrated circuits (OEICs). Thin films of InP, InGaAs, and InGaAsP, grown by liquid phase epitaxy, were lattice matched to the (100) InP substrates. The films were n-type, with the carrier concentration decreasing by an order of magnitude in the doped films due to gettering by the rare earth elements. The doped films contained 2.6×1018 - 1.5×1020 cm−3 rare earth elements, which were observed to segregate toward the film/melt interface in the more highly doped films. A broad photoluminescence was observed at 1.52 μm in the Er-doped films. The Verdet constant was measured through the sample thickness, and the substrate signal dominated the measurements. However, the measured values were in agreement with published values for InP, which gives an indication of the films' host value. The Verdet constants increased from 4 to 7 deg/T/mm as the wavelength decreased toward the band edge. The band edges of our samples were 0.93, 1.62, and 1.30 μm, respectively. Rare earth dopants were observed to raise the refractive index of the InP films, and waveguiding at 1.3 μm was achieved in the rare earth-doped InP films and in the InGaAsP films.
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Wada, O., and O. Ueda. "Reliable Metallization For InP-Based Devices and Oeic’s." MRS Proceedings 181 (1990). http://dx.doi.org/10.1557/proc-181-273.
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ABSTRACTWe describe techniques of reliable metallization in InP-based systems for application to discrete and opto-electronic integrated circuits (OEIC’s). Strong metallurgical interaction between Au and InP-based compounds can cause serious contact degradation in light emitting diodes (LED’s). By analyzing this interaction in detail, an improved thin Au/Zn/Au p-contact technique has been developed. The results are compared with Pt/Ti contacts, and it has shown that both provide sufficient reliability under temperature and current stresses in LED’s. We then describe a metallization technique for flip-chip bonding of opto-electronic devices on other semiconductor chips for OEIC applications. An acceptable reaction barrier effect of Pt in AuSn/Pt/Ti metallization structure has been demonstrated and this structure has been used for a high-reliability, flip-chip integrated GalnAs/InP PIN photodiode/GaAs amplifier receiver circuit. We also discuss requirements for metallization for future monolithic OEIC’s by taking up an example of metal-semiconductor-metal photodiodes in InP-based systems.
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Wada, O., and O. Ueda. "Reliable Metallization for Inp-Based Devices and Oeic's." MRS Proceedings 184 (1990). http://dx.doi.org/10.1557/proc-184-209.
Full textAbstract:
ABSTRACTWe describe techniques of reliable metallization in InP-based systems for application to discrete and opto-electronic integrated circuits (OEIC's). Strong metallurgical interaction between Au and InP-based compounds can cause serious contact degradation in light emitting diodes (LED's). By analyzing this interaction in detail, an improved thin Au/Zn/Au p-contact technique has been developed. The results are compared with Pt/Ti contacts, and it has shown that both provide sufficient reliability under temperature and current stresses in LED's. We then describe a metallization technique for flip-chip bonding of opto-electronic devices on other semiconductor chips for OEIC applications. An acceptable reaction barrier effect of Pt in AuSn/Pt/Ti metallization structure has been demonstrated and this structure has been used for a high-reliability, flip-chip integrated GaInAs/InP PIN photodiode/GaAs amplifier receiver circuit. We also discuss requirements for metallization for future monolithic OEIC's by taking up an example of metal-semiconductor-metal photodiodes in InP-based systems.