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Journal articles on the topic 'Open Circuit Voltage Decay (OCVD)'

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Author: Grafiati

Published: 10 March 2023

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1

Journal, Baghdad Science. "Evaluation of Laser Doping of Si from MCLT Measurement." Baghdad Science Journal 1, no. 2 (June 6, 2004): 321–25. http://dx.doi.org/10.21123/bsj.1.2.321-325.

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The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.

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2

Sakata, Isao, and Yutaka Hayashi. "Open-Circuit Voltage Decay (OCVD) Measurement Applied to Hydrogenated Amorphous Silicon Solar Cells." Japanese Journal of Applied Physics 29, Part 2, No. 1 (January 20, 1990): L27—L29. http://dx.doi.org/10.1143/jjap.29.l27.

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3

Amri, Khaoula, Rabeb Belghouthi, Michel Aillerie, and Rached Gharbi. "An Open Circuit Voltage Decay System for a Flexible Method for Characterization of Carriers’ Lifetime in Semiconductor." Key Engineering Materials 886 (May 2021): 3–11. http://dx.doi.org/10.4028/www.scientific.net/kem.886.3.

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Among all the material parameters of a semiconductor, the lifetime of the carriers is one of the most complex, as it is a function of the dominant recombination mechanism, the number of carriers, the structural parameters and the temperature. Nevertheless, the lifetime of the carriers is a very useful and fundamental parameter to be determined for the qualification of the semiconductor in order to allow the improvement of the manufacturing process and the optimization of the operation of the semiconductor device. Thus being strongly linked to many physical and electronic parameters, the lifetime of the carriers cannot be provided only with a theoretical average value and an experimental measured value must be obtained. In the case of semiconductor junctions, precise measurements of the open-circuit voltage decay, OCVD, make it possible to trace the lifetime of the carriers through the device. An automated method for OCVD measurements presented in this contribution overcomes the main limitations that arise in the standard method when used for the characterization of the lifetime of carriers as it achieves the "open circuit conditions" of the device under test and reduces inherent noise of the differential operation mode of the method.

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4

A. K., Azlina, M. H. Mamat, Che Soh, Z. H., M. F. A. Rahman, N. A. Othman, Marina M., Syarifah Adilah M. Y., and M. H. Abdullah. "MITRAGYNA SPECIOSA DYE SENSITISER AS THE LIGHT-HARVESTING MOLECULES FOR DYE-SENSITISED SOLAR CELLS." Jurnal Teknologi 85, no. 1 (December 2, 2022): 107–13. http://dx.doi.org/10.11113/jurnalteknologi.v85.18695.

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In this study, natural dye sensitisers derived from ketum (Mitragyna speciosa-MS), spinach (Spinacia oleracea-SO), curry (Murraya koenigii-MK), papaya (Carica papaya-CP), and henna (Lawsonia inermis-LI) were investigated for dye-sensitised solar cells (DSSCs). Ultraviolet-Visible Spectroscopy (UV-Vis), Fourier Transform Infrared spectroscopy (FTIR), Open-Circuit Voltage Decay (OCVD) and Current to Voltage (I-V) were used to analyse the natural dye and the fabricated DSSC. It was observed that all dye solutions contain the majority of important functional groups of chlorophyll-based sensitisers, which is crucial for the dye-to-TiO2 (Titanium (II) Oxide) attachment, making them suitable sources of energy harvesting pigments. In this regard, the dye pH and chemical bonding of the respective dyes play a significant role that contribute to the overall performance of the DSSCs. It was discovered that a dye based on MK provided the best DSSC performance. This is because MK-based dye has higher content of functional groups, an optimal pH, and the slowest properties of back electron recombination among the OCVD measurements. Because of the combination of these properties, the open-circuit voltage (VOC), short-circuit current density (JSC), and power conversion efficiency (PCE) values have been determined to be 0.58 V, 2.48 mA/cm2, and 0.47%, respectively.

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5

Dheilly, Nicolas, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Pascal Bevilacqua, Dominique Tournier, Josep Montserrat, Christophe Raynaud, and Hervé Morel. "Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique." Materials Science Forum 615-617 (March 2009): 703–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.703.

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This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

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6

Peng, Wei, Shu Zhen Yang, and Wei Hu. "Variable Rank Differential Smoothing Technique for Electron Lifetime Calculation in Dye-Sensitized Solar Cells." Journal of Nano Research 48 (July 2017): 1–7. http://dx.doi.org/10.4028/www.scientific.net/jnanor.48.1.

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The free electron lifetime is a key factor in determining the performance of a dye-sensitized solar cells (DSCs). Open-circuit voltage-decay (OCVD) suggested by Zaban is a useful technique to provide continuous reading of the electron lifetime as a function of device’s open-circuit voltage (Voc), but the data processing has never been studied in order to get high accuracy electron lifetime value from the high resolution decaying voltage data. In this manuscript, we introduce the variable rank differential smoothing (VRDS) technique in the electron lifetime data processing. We find it can lessen data loss and give highly accurate electron lifetime value in the range of Voc decaying. We also get the effective recombination order values based on the VRDS technique, which indicate different potential processes due the two different values. These results show the detail kinetics information and microscopic device physic characteristics, which are very important to understand the device working mechanism and meaningful for realizing higher performance solar cells.

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7

Ismail, Raid A., Omar A. Abdulrazzaq, and Abdullah M. Ali. "Photovoltaic properties of ITO/p-Si heterojunction prepared by pulsed laser deposition." International Journal of Modern Physics B 34, no. 32 (November 13, 2020): 2050321. http://dx.doi.org/10.1142/s021797922050321x.

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In this study, indium tin oxide (ITO) was deposited onto sapphire and low resistive p-Si substrates using pulsed laser deposition (PLD) technique. The optical energy gap of ITO deposited on the sapphire substrate was 3.7 eV at room temperature. Photoluminescence (PL) of ITO shows an emission of broad peak at 524 nm. Photovoltaic (PV) characteristics of the n-ITO/p-Si heterojunction are examined and showed conversion efficiency [Formula: see text] of 1.8%. The open circuit voltage [Formula: see text] for this cell was 0.49 V while the short circuit current density [Formula: see text] was 17.4 mA/cm2. The fill factor of this cell was 22%. The ideality factor of ITO/Si heterojunction is about 3.1. The barrier height [Formula: see text] of the heterojunction was determined from I–V characteristics and was 0.83 eV. The responsivity of the heterojunction was measured and the maximum value of responsivity was 0.5 A/W without bias voltage. The minority carrier lifetime of the solar was measured using open circuit voltage decay (OCVD) method and found to be 227 [Formula: see text]s.

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8

Affour, B., and P. Mialhe. "Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity." Active and Passive Electronic Components 19, no. 4 (1997): 225–38. http://dx.doi.org/10.1155/1997/46342.

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The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values ofτand S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. Deviations in lifetime values remain lower than 7% for almost all the cell configurations while recombination velocity deviations are shown to be dependent on cell structure parameters and experimental procedure.

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9

Nipoti, Roberta, Maurizio Puzzanghera, and Giovanna Sozzi. "Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes." Materials Science Forum 897 (May 2017): 439–42. http://dx.doi.org/10.4028/www.scientific.net/msf.897.439.

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The reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×1019 cm-3 against 2×1020 cm-3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes’ ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.

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10

Sundaresan, Siddarth G., Charles Sturdevant, Madhuri Marripelly, Eric Lieser, and Ranbir Singh. "12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes." Materials Science Forum 717-720 (May 2012): 949–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.949.

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Sharp avalanche breakdown voltages of 12.9 kV are measured on PiN rectifiers fabricated on 100 µm thick, 3 x 1014 cm-3 doped n- epilayers grown on n+ 4H-SiC substrates. This equates to a record high 129 V/µm for a > 10 kV device. Optimized epilayer, device design and processing of the SiC PiN rectifiers result in a > 60% blocking yield at 10 kV, ultra-low on-state voltage drop and differential on-resistance of 3.75 V and 3.3 mΩ-cm2 at 100 A/cm2 respectively. Open circuit voltage decay (OCVD) measured carrier lifetimes in the range of 2-4 µs are obtained at room temperature, which increase to a record high 14 µs at 225 °C. Excellent stability of the forward bias characteristics within 10 mV is observed for a long-term forward biasing of the PiN rectifiers at 100 A/cm2. A PiN rectifier module consisting of five parallel large area 6.4 mm x 6.4 mm 10 kV PiN rectifiers is connected as a free-wheeling diode with a Si IGBT and 1100 V/100 A switching transients are recorded. Data on the current sharing capability of the PiN rectifiers is also presented.

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11

Khurshid, Farheen, M. Jeyavelan, M. Sterlin Leo Hudson, and Samuthira Nagarajan. "Ag-doped ZnO nanorods embedded reduced graphene oxide nanocomposite for photo-electrochemical applications." Royal Society Open Science 6, no. 2 (February 2019): 181764. http://dx.doi.org/10.1098/rsos.181764.

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In this paper, the Ag-doped zinc oxide nanorods embedded reduced graphene oxide (ZnO:Ag/rGO) nanocomposite was synthesized for photocatalytic degradation of methyl orange (MO) in the water. The microstructural results confirmed the successful decoration of Ag-doped ZnO nanorods on rGO matrix. The photocatalytic properties, including photocatalytic degradation, charge transfer kinetics and photocurrent generation, are systematically investigated using electrochemical impedance spectroscopy (EIS), photocurrent transient response (PCTR) and open circuit voltage decay (OCVD). The results of photocatalytic dye degradation measurements indicated that ZnO:Ag/rGO nanocomposite is more effective than pristine ZnO to degrade the MO dye, and the degradation rate reached 40.6% in 30 min. The decomposition of MO with ZnO:Ag/rGO nanostructure followed first-order reaction kinetics with a reaction rate constant ( K a ) of 0.01746 min −1 . The EIS, PCTR and OCVD measurements revealed that the Ag doping and incorporation of rGO could suppress the recombination probability in ZnO by the separation of photo-generated electron–hole pairs, which leads to the enhanced photocurrent generation and photocatalytic activity. The photocurrent density of ZnO:Ag/rGO, ZnO/rGO and pristine ZnO are 206, 121.4 and 88.8 nA cm −2 , respectively.

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12

Soloviev, Stanislav, Ahmed Elasser, Sarah Katz, Steve Arthur, Zach Stum, and Liang Chun Yu. "Optimization of Holding Current in 4H-SiC Thyristors." Materials Science Forum 740-742 (January 2013): 994–97. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.994.

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Two designs (A and B) of 4H-SiC thyristors for pulse power applications were implemented and characterized in this work. Both designs have the same layout and epi-layer stack except for the anode layers: thyristors with design A (baseline) had a thin (~0.5 um) anode while devices with design B (optimized) consisted of a heavily doped cap layer (~0.5 um, ~1019/cc) and ~1.5 um p-type layer with lower doping (~1018/cc). All devices were fabricated in 4” 4H-SiC subSuperscript textstrates (three wafers per each design) and were fully characterized at the wafer level including measurements of forward voltage, blocking voltage, leakage current, and holding current. It was shown that the mean value of the holding current in the thyristors with thin anode was significantly higher (0.7A) than that of the thyristors with thick anode (0.1A), while other parameters had practically the same values. The open circuit voltage decay (OCVD) method was used for measurements of the minority carrier lifetime in order to correlate it with the holding current. Impact of material properties and device design parameters on the holding current is discussed as well.

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13

Li, Luping, Cheng Xu, Yang Zhao, and Kirk J. Ziegler. "Tin-Doped Indium Oxide-Titania Core-Shell Nanostructures for Dye-Sensitized Solar Cells." Advances in Condensed Matter Physics 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/903294.

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Dye-sensitized solar cells (DSSCs) hold great promise in the pursuit of reliable and cheap renewable energy. In this work, tin-doped indium oxide (ITO)-TiO2core-shell nanostructures are used as the photoanode for DSSCs. High-density, vertically aligned ITO nanowires are grown via a thermal evaporation method and TiO2is coated on nanowire surfaces via TiCl4treatment. It is found that high TiO2annealing temperatures increase the crystallinity of TiO2shell and suppress electron recombination in the core-shell nanostructures. High annealing temperatures also decrease dye loading. The highest efficiency of 3.39% is achieved at a TiO2annealing temperature of 500°C. When HfO2blocking layers are inserted between the core and shell of the nanowire, device efficiency is further increased to 5.83%, which is attributed to further suppression of electron recombination from ITO to the electrolyte. Open-circuit voltage decay (OCVD) measurements show that the electron lifetime increases by more than an order of magnitude upon HfO2insertion. ITO-TiO2core-shell nanostructures with HfO2blocking layers are promising photoanodes for DSSCs.

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14

Badawi, Ali, Nasser Y. Mostafa, Najm M. Al-Hosiny, Amar Merazga, Ateyyah M. Albaradi, F. Abdel-Wahab, and A. A. Atta. "The photovoltaic performance of Ag2S quantum dots-sensitized solar cells using plasmonic Au nanoparticles/TiO2 working electrodes." Modern Physics Letters B 32, no. 16 (June 5, 2018): 1850172. http://dx.doi.org/10.1142/s0217984918501725.

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The photovoltaic performance of silver sulfide (Ag2S) quantum dots-sensitized solar cells (QDSSCs) using different concentrations (0, 0.05, 0.1, 0.3 and 0.5 wt.%) of plasmonic Au nanoparticles (NPs)/titania (TiO2) electrodes has been investigated. Ag2S quantum dots (QDs) were adsorbed onto the Au NPs/titania electrodes using the successive ionic layer adsorption and reaction (SILAR) deposition technique. The morphological properties of the Au NPs and the prepared titania electrodes were characterized using transmission electron microscope (TEM) and scanning electron microscope (SEM), respectively. The energy-dispersive X-ray (EDX) spectra of the bare titania and Ag2S QDs-sensitized titania electrodes were recorded. The optical properties of the prepared Ag2S QDs-sensitized titania electrodes were measured using a UV–visible spectrophotometer. The estimated energy band gap of Ag2S QDs-sensitized titania electrodes is 1.96 eV. The photovoltaic performance of the assembled Ag2S QDSSCs was measured under 100 mW/cm2 solar illumination. The optimal photovoltaic parameters were obtained as follows: open circuit voltage [Formula: see text] = 0.50 V, current density [Formula: see text] = 3.18 mA/cm2, fill factor (FF) = 0.35 and energy conversion efficiency [Formula: see text] = 0.55% for 0.3 wt.% of Au NPs/titania electrode. These results are attributed to the enhancement in the absorption and decrease in the electron–hole pairs recombination rate. The open circuit voltage decay (OCVD) measurements of the assembled Ag2S QDSSCs were measured. The calculated electron lifetime [Formula: see text] in Ag2S QDSSCs with Au NPs/titania electrodes is at least one order of magnitude more than that with bare titania electrode. The cut-on–cut-off cycles of the solar illumination measurements show the rapid sensitivity and good reproducibility of the assembled Ag2S QDSSCs.

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15

Stutenbaeumer, Ulrich, and Elias Lewetegn. "Comparison of minority carrier diffusion length measurements in silicon solar cells by the photo-induced open-circuit voltage decay (OCVD) with different excitation sources." Renewable Energy 20, no. 1 (May 2000): 65–74. http://dx.doi.org/10.1016/s0960-1481(99)00089-0.

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Shi, Mingwei, Zailei Zhang, Man Zhao, Xianmao Lu, and Zhong Lin Wang. "Reducing the Self-Discharge Rate of Supercapacitors by Suppressing Electron Transfer in the Electric Double Layer." Journal of The Electrochemical Society 168, no. 12 (December 1, 2021): 120548. http://dx.doi.org/10.1149/1945-7111/ac44b9.

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For supercapacitors, high self-discharge rate is an inevitable issue that causes fast decay of cell voltage and loss of stored energy. Designing supercapacitors with suppressed self-discharge for long-term energy storage has been a challenge. In this work, we demonstrate that substantially reduced self-discharge rate can be achieved by using highly concentrated electrolytes. Specifically, when supercapacitors with 14 M LiCl electrolyte are charged to 0.80 V, the open circuit voltage (OCV) drops to 0.65 V in 24 h. In stark contrast, when the electrolyte concentration is reduced to 1 M, the OCV drops from 0.80 to 0.65 V within only 0.3 h, which was 80 times faster than that with 14 M LiCl. Decreased OCV decay rate at high electrolyte concentration is also confirmed for supercapacitors with different electrolytes (e.g., LiNO3) or at higher charging voltages (1.60 V). The slow self-discharge in highly concentrated electrolyte can be largely attributed to impeded electron transfer between the electrodes and electrolyte due to the formation of hydration clusters and reduced amount of free water molecules, thereby faradaic reactions that cause fast self-discharge are reduced. Our study not only supports the newly revised model about the formation of electric double layer with the inclusion of electron transfer, but also points a direction for substantially reducing the self-discharge rate of supercapacitors.

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17

Streck, Luiza, Thomas Roth, Peter Keil, Benjamin Strehle, Severin Ludmann, and Andreas Jossen. "Determination of Leakage Currents Via Voltage Hold and Voltage Relaxation Method Using High Precision Coulometry - a Comparison and Optimization Study." ECS Meeting Abstracts MA2022-02, no. 3 (October 9, 2022): 350. http://dx.doi.org/10.1149/ma2022-023350mtgabs.

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Parasitic side reactions on the surface of the anode and the cathode of lithium-ion batteries contribute significantly to calendar and cyclic aging [1, 2]. In order to investigate these parasitic side reactions, such as solid electrolyte interface growth, this study focuses on two methods broadly utilized to determine leakage currents: the voltage hold and the voltage relaxation method. Regarding the voltage relaxation method, the open circuit voltage (OCV) decay is observed over weeks without allowing active electrode de-/lithiation [3] and subsequently, a small pulse is performed to calculate the leakage current [4]. For the voltage hold method, a defined voltage is kept constant, which compensates the parasitic side effects and allows active electrode de-/lithiation to maintain the state of charge (SoC) [5, 6]. To compare these methods, different results are found in literature. On the one hand, both methods were reported to deliver individual results [3, 7], while other research activities [8] found the variance only at 100% SoC. Therefore, voltage hold and voltage relaxation were compared in this study, utilizing high precision coulometry (HPC). The measurements were conducted on 16 commercial LGChem INR18650MJ1 cylindrical cells at 25 °C, 40 °C and 55 °C and different SoCs of 10%, 50%, 90%, and 100% SoC, respectively. The cells were preconditioned to each SoC and were subsequently stored for 30 days to minimize relaxation and anode overhang effects. Afterwards, voltage hold and voltage relaxation measurements were carried out for 21 days at each temperature and SoC. In addition to the discharge pulse, an incremental capacity analysis (ICA) was conducted for all three temperatures through the whole voltage range to compare and validate the results obtained. The measurements of this study delivered similar results for the voltage hold and the voltage relaxation method, especially at 10% SoC and 50% SoC. Consequently, the voltage hold did not contribute to additional parasitic side reactions from allowing active de-/lithiation of the electrode. Minor deviations were found for 90% SoC and 100% SoC, for which one possible explanation may be the flat shape of the OCV curve, among others. In addition, the results show a strong dependency on the pulse length and strength. This study was part of the project ExZellTUM III, funded by the German Federal Ministry of Education and Research (BMBF) under grant number 03XP0255, supervised by Project Management Jülich (PTJ). Literature [1] Smith, A.; Burns, J.; Dahn, J.: A high precision study of the coulombic efficiency of Li-ion batteries, In: Electrochemical and Solid-State Letters 13, p. A177, 2010 [2] Birkl, C. R.; Roberts, M. R.; McTurk, E.; Bruce, P. G.; Howey, D. A.: Degradation diagnostics for lithium ion cells, In: Journal of Power Sources 341, p. 373-386, 2017 [3] Zilberman, I.; Sturm, J.; Jossen, A.: Reversible self-discharge and calendar aging of 18650 nickel-rich, silicon-graphite lithium-ion cells, In: Journal of Power Sources 425 (9), p. 217-226, 2019 [4] Schmidt, J. P.; Weber, A.; Ivers-Tiffée, E.: A novel and fast method of characterizing the self-discharge behaviour of lithium-ion cells using a pulse-measurements technique, In: Journal of Power Sources 274, p.1231-1238, 2015 [5] Lewerenz, M.; Käbitz, S.; Knips, M.; Münnix, J.; Schmalstieg, J.; Warnecke, A.; Uwe Sauer, D.: New method evaluating currents keeping the voltage constant for fast and highly resolved measurement of Arrhenius relation and capacity fade, In: Journal of Power Sources 353, p.144-151, 2017 [6] Vadivel, N. R.; Ha, S.; He, M.; Dees, D.; Trask, S.; Polzin, B.; Gallagher, K. G.: On leakage current measured at high cell voltages in lithium-ion batteries, In: Journal of The Electrochemical Society, 164 (2), p. 508-A517, 2017 [7] Theiler, M.; Endisch, C.; Lewerenz, M.: Float Current Analysis for Fast Calendar Aging Assessment of 18650 Li(NiCoAl)O2/Graphite Cells, In: Batteries 7 (2), p. 22–22, 2021 [8] Käbitz, S.; Gerschler, J. B.; Ecker, M., Yurdagel, Y.; Emmermacher, B.; André, D.; Mitsch, T.; Uwe Sauer, D.: Cycle and calendar life study of a graphite LiNi1/3Mn1/3Co1/3O2 Li-ion high energy system. Part A: Full cell characterization, In: Journal of Power Sources 239, p. 572-583, 2013

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18

Vobecký, J., P. Hazdra, and V. Záhlava. "Open circuit voltage decay lifetime of ion irradiated devices." Microelectronics Journal 30, no. 6 (June 1999): 513–20. http://dx.doi.org/10.1016/s0026-2692(98)00173-6.

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19

Ba, B., and M. Kane. "Open-circuit voltage decay in polycrystalline silicon solar cells." Solar Energy Materials and Solar Cells 37, no. 3-4 (July 1995): 259–71. http://dx.doi.org/10.1016/0927-0248(95)00019-4.

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20

Nay Wunn, Htoo, Yutaro Sakamoto, Isamu Hashidaka, Shinichi Motoda, and Motoaki Morita. "Analysis of Open Circuit Voltage Decay in Titanium Dioxide Electrode." ECS Meeting Abstracts MA2020-02, no. 61 (November 23, 2020): 3111. http://dx.doi.org/10.1149/ma2020-02613111mtgabs.

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21

Lindholm, Fredrik A., and C. Tang Sah. "Circuit technique for semiconductor-device analysis with junction diode open circuit voltage decay example." Solid-State Electronics 31, no. 2 (February 1988): 197–204. http://dx.doi.org/10.1016/0038-1101(88)90128-1.

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22

Gopal, R., R. Dwivedi, and S. K. Srivastava. "Open‐circuit voltage‐decay behavior inp‐njunction diode at high injection." Journal of Applied Physics 58, no. 9 (November 1985): 3476–80. http://dx.doi.org/10.1063/1.335770.

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23

Lemaire, Antoine, Arnaud Perona, Matthieu Caussanel, Herve Duval, and Alain Dollet. "Open-circuit voltage decay: moving to a flexible method of characterisation." IET Circuits, Devices & Systems 14, no. 7 (October 1, 2020): 947–55. http://dx.doi.org/10.1049/iet-cds.2020.0123.

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Sudheendra Rao, K., and Y. N. Mohapatra. "Open circuit voltage decay transients and recombination in bulk-heterojunction solar cells." Applied Physics Letters 104, no. 20 (May 19, 2014): 203303. http://dx.doi.org/10.1063/1.4879278.

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Lacouture, Shelby, James Schrock, Emily Hirsch, Stephen Bayne, Heather O’Brien, and Aderinto A. Ogunniyi. "An open circuit voltage decay system for performing injection dependent lifetime spectroscopy." Review of Scientific Instruments 88, no. 9 (September 2017): 095105. http://dx.doi.org/10.1063/1.5001732.

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Davletova, A., and S. Zh Karazhanov. "Open-circuit voltage decay transient in dislocation-engineered Si p–n junction." Journal of Physics D: Applied Physics 41, no. 16 (July 30, 2008): 165107. http://dx.doi.org/10.1088/0022-3727/41/16/165107.

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Kim, Seul Ah, Muhammad Awais Abbas, Lanlee Lee, Byungwuk Kang, Hahkjoon Kim, and Jin Ho Bang. "Control of morphology and defect density in zinc oxide for improved dye-sensitized solar cells." Physical Chemistry Chemical Physics 18, no. 44 (2016): 30475–83. http://dx.doi.org/10.1039/c6cp04204j.

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The surface characteristics of the ZnO photoelectrode in dye-sensitized solar cells are elucidated by in-depth electrochemical analyses including open-circuit voltage decay measurements and electrochemical impedance spectroscopy.

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Zemel, A., and M. Gallant. "Carrier lifetime in InP/InGaAs/InP by open‐circuit voltage and photoluminescence decay." Journal of Applied Physics 78, no. 2 (July 15, 1995): 1094–100. http://dx.doi.org/10.1063/1.360342.

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Soliman, Fouad A. S. "Applications of open circuit voltage decay technique for the characterisation of photovoltaic devices." International Journal of Ambient Energy 18, no. 1 (January 1997): 13–22. http://dx.doi.org/10.1080/01430750.1997.9675253.

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Verma, Upkar K., Sunil Kumar, and Y. N. Mohapatra. "Comparison between conventional and inverted solar cells using open circuit voltage decay transients." Journal of Applied Physics 122, no. 8 (August 28, 2017): 085503. http://dx.doi.org/10.1063/1.4993274.

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Kerr, Mark J., Andres Cuevas, and Ronald A. Sinton. "Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements." Journal of Applied Physics 91, no. 1 (2002): 399. http://dx.doi.org/10.1063/1.1416134.

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Berry, W. B., and P. Longrigg. "Open-circuit voltage decay — measures of amorphous silicon material stability and module degradation." Solar Cells 24, no. 3-4 (July 1988): 321–28. http://dx.doi.org/10.1016/0379-6787(88)90084-1.

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Vollbrecht, Joachim, and Viktor V. Brus. "Effects of Recombination Order on Open-Circuit Voltage Decay Measurements of Organic and Perovskite Solar Cells." Energies 14, no. 16 (August 6, 2021): 4800. http://dx.doi.org/10.3390/en14164800.

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Non-geminate recombination, as one of the most relevant loss mechanisms in organic and perovskite solar cells, deserves special attention in research efforts to further increase device performance. It can be subdivided into first, second, and third order processes, which can be elucidated by the effects that they have on the time-dependent open-circuit voltage decay. In this study, analytical expressions for the open-circuit voltage decay exhibiting one of the aforementioned recombination mechanisms were derived. It was possible to support the analytical models with experimental examples of three different solar cells, each of them dominated either by first (PBDBT:CETIC-4F), second (PM6:Y6), or third (irradiated CH3NH3PbI3) order recombination. Furthermore, a simple approach to estimate the dominant recombination process was also introduced and tested on these examples. Moreover, limitations of the analytical models and the measurement technique itself were discussed.

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Kavasoglu, A. Sertap, Nese Kavasoglu, and Sener Oktik. "The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell." Solar Energy 83, no. 9 (September 2009): 1446–53. http://dx.doi.org/10.1016/j.solener.2009.03.009.

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Losee, P. A., C. Li, R. J. Kumar, T. P. Chow, I. B. Bhat, and R. J. Gutmann. "ELECTRICAL CHARACTERISTICS AND CARRIER LIFETIME MEASUREMENTS IN HIGH VOLTAGE 4H-SIC PIN DIODES." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 43–48. http://dx.doi.org/10.1142/s0129156407004229.

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The key material and device parameters governing the electrical performance of high voltage 4 H - SiC PiN diodes have been investigated using experimental results and numerical simulations. Reverse recovery characteristics show an increase in both carrier lifetime and anode injection efficiency at elevated temperature. Open circuit voltage decay measurements are used to estimate carrier lifetimes (τ≈0.6μ s at T =25° C increasing to τ≈2μ s at T =225° C ) that are comparable to values measured on starting material prior to fabrication using micro-wave photoconductivity decay techniques.

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Jain, S. C., U. C. Ray, R. Muralidharan, and V. K. Tewary. "Open circuit voltage decay in p-n junction diodes at high levels of injection." Solid-State Electronics 29, no. 5 (May 1986): 561–70. http://dx.doi.org/10.1016/0038-1101(86)90079-1.

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Dhariwal, S. R., and R. C. Sharma. "Modified differential open-circuit-voltage decay method for lifetime measurement in p-n junctions." Solid-State Electronics 36, no. 3 (March 1993): 421–26. http://dx.doi.org/10.1016/0038-1101(93)90096-9.

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De, S. S., A. K. Ghosh, A. K. Hajra, M. Bera, and J. C. Haldar. "Heavy doping effects on open circuit voltage decay in an abrupt p+-n junction." Solid-State Electronics 37, no. 10 (October 1994): 1775–77. http://dx.doi.org/10.1016/0038-1101(94)90228-3.

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Totterdell, D. H. J., J. W. Leake, and S. C. Jain. "High-injection open-circuit voltage decay in pn-junction diodes with lightly doped bases." IEE Proceedings I Solid State and Electron Devices 133, no. 5 (1986): 181. http://dx.doi.org/10.1049/ip-i-1.1986.0038.

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Banghart, E. K., and J. L. Gray. "Extension of the open-circuit voltage decay technique to include plasma-induced bandgap narrowing." IEEE Transactions on Electron Devices 39, no. 5 (May 1992): 1108–14. http://dx.doi.org/10.1109/16.129090.

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Tanaka, Atsushi, Koji Nakayama, Katsunori Asano, Tetsuya Miyazawa, and Hidekazu Tsuchida. "Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation." Japanese Journal of Applied Physics 53, no. 4S (January 1, 2014): 04EP08. http://dx.doi.org/10.7567/jjap.53.04ep08.

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Mialhe, P., B. Affour, K. El-Hajj, and A. Khoury. "High Injection Effects on Solar Cell Performances." Active and Passive Electronic Components 17, no. 4 (1995): 227–32. http://dx.doi.org/10.1155/1995/93424.

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Experiments are performed on solar cells under concentrated sunlight in order to explore fundamental physical processes with high injection conditions. Saturation effects are observed on the cell open circuit voltage and on the extracted values of the recombination current. A large decrease of the initial decay of the transient voltage have been measured. High injection effects are shown to be correlated with the increase of recombination current in the space charge region together with an increase of the emitterbase coupling.

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43

Li, Rong, Xin Yu Tan, Yue Hua Huang, Yuan Liu, and Qin Qin Liu. "The Influence of Interface Silicon Oxide Layer on Photovoltaic Effect of Iron-Doped Amorphous Carbon Film/SiO₂/Si Based Heterostructure." Advanced Materials Research 535-537 (June 2012): 2071–74. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.2071.

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This paper studied the impact of silicon oxide layer on photovoltaic characteristic of iron-doped amorphous carbon film/silicon heterojunction (a-C:Fe/Si). The results show that a native SiO2 layer on the silicon surface can provide a significant improvement of the a-C:Fe/Si devices’ photovoltaic performances, especially for the short circuit current and fill factor. This improvement partly may be attributed to the electron recombination process is suppressed and the interface is modified by the SiO2 film based on the open circuit voltage decay measurement.

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Zhou, Fu Fang, Chun Xu Pan, and Yuan Ming Huang. "Organic Photovoltaic Cells Prepared with Toluene Sulfonic Acid Doped Polypyrrole." Key Engineering Materials 428-429 (January 2010): 450–53. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.450.

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Organic photovoltaic cells were fabricated by sandwiching p-toluene sulfonic acid doped conducting polymer polypyrrole between indium-tin-oxide cathodes and aluminum anodes. The active polymeric layers could effectively absorb incident photons more than 75 % in the entire spectral region of 250~1100 nm. Upon light exposure, the short-circuit current and the open-circuit voltage were recorded up to 0.6 μA/cm2 and 60 mV, respectively, for the organic photovoltaic cells. The dynamics of the generation and decay of the photocurrent and photovoltage in our organic photovoltaic cells were investigated.

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Zaban, Arie, Miri Greenshtein, and Juan Bisquert. "Determination of the Electron Lifetime in Nanocrystalline Dye Solar Cells by Open-Circuit Voltage Decay Measurements." ChemPhysChem 4, no. 8 (August 7, 2003): 859–64. http://dx.doi.org/10.1002/cphc.200200615.

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46

Miyashita, Tomofumi. "(Digital Presentation) Additional Voltage Loss in Terms of Electromagnetic Potential Related to Jarzynski’s Equality Using Sm-Doped Ceria Electrolytes in Wagner’s Equation for SOFCs." ECS Meeting Abstracts MA2022-01, no. 41 (July 7, 2022): 2398. http://dx.doi.org/10.1149/ma2022-01412398mtgabs.

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A solid oxide fuel cell (SOFC) converts chemical energy from a fuel gas, such as hydrogen or methane, to electrical energy. Yttria-stabilized zirconia (YSZ) films are often used as electrolytes in which only oxygen ions are carriers. In such cases, the open circuit voltage (OCV = 1.15 V at 1073 K) is equal to the Nernst voltage (Vth = 1.15 V at 1073 K). Samaria-doped ceria (SDC) have higher ionic conductivity. Therefore, SDC films are possible electrolyte candidates. However, when SDC electrolytes are used in SOFCs, the OCV is only 0.80 V at 1073 K. The voltage loss has been explained by Wagner’s equation. Numerous subsequent models have been created based on Wagner’s equation. Using the Riess model, the current-voltage relationship can be calculated with the cathode and anode polarization voltage losses [1]. Furthermore, a nonlinear model was created by Duncan and Wachsman [2]. This model can also be used to explain the equilibrium process. According to the Riess model, the OCV should decrease during electrode degradation. However, experimentally, the OCV does not change during electrode degradation [3]. The change in the equilibration of thick SDC electrolytes in response to a change in the anode gas has never been explained using the model defined by Duncan and Wachsman. Experimentally, when a very thick (6.6 mm) SDC electrolyte is used, the OCV can reach 0.80 V in only 5 minutes [4]. According to Weppner, the corresponding delay in the electron diffusion current should be more than 2080 minutes [5]. We proposed a current-independent anode voltage loss (0.35 V = 1.15 V- 0.80 V) [6]. Since we disproved the existence of large leakage currents in SDC electrolytes, our explanations seem to disregard and disprove Wagner’s equation. However, we noticed that the dismissal of this idea regarding large leakage currents in SDC electrolytes is nothing more than a side effect. When SDC electrolytes experience a large anode voltage loss (0.35 V), the leakage currents are very small. This is called the “anode shielding effect” [7]. The ionic activation energy (Ea) of SDC electrolytes is 0.7 eV (= 0.35 V ×2e). During ion hopping processes in SDC electrolytes, the work done by ions on the surrounding lattice structure is 0.7 eV. The ions should regain the 0.7 eV after hopping. However, when there are many electrons in the hopping path, hopping processes are very complex, and calculating the loss of work is challenging. Jarzynski’s equality is a very useful method of calculating the loss of work only from the first equilibrium state to the second equilibrium state. Because the distribution of hopping ions always should be a canonical ensemble, the loss of work can be calculated. When there are enough electrons, the ions cannot regain the 0.7 eV, and voltage loss (0.35 V) occurs [8]. To assist the above explanation, we use the electromagnetic potential to explain the voltage loss that occurs during ion hopping. We noticed that the potential of ions during hopping can be calculated from the Lorenz gauge condition. Reference: [1] I. Riess, J. Phys. Chem. Solids., 47(2), 129 (1986). doi: 10.1016/0022-3697(86)90121-6. [2] K. L. Duncan and E. D. Wachsman, J. Electrochem. Soc., 156, B1030 (2009). doi: 10.1149/1.315851. [3] T. Miyashita, J. Mater. Sci., 41(10), 3183 (2006). doi: 10.1007/s10853-006-6371-8. [4] T. Miyashita, J. Electrochem. Soc., 164(11) 3190 (2017). doi: 10.1149/2.0251711jes [5] J. Liu and W. Weppner, Ionics, 5(1–2), 115 (1999). doi: 10.1007/BF02375914. [6] T. Miyashita, J. Mater. Sci., 40(22), 6027 (2005). doi: 10.1007/s10855-005-4560-2. [7] B. Dalslet, P. Blennow, P. V. Hendriksen, N. Bonanos, D. Lybye, and M. Mogensen, J. Solid State Electrochem., 10(8), 547 (2006). doi: 10.1007/s10008-006-0135-x. [8] T. Miyashita, Miyashita, ECSarXiv (2020) “Open-Circuit Voltage Anomalies in Yttria-Stabilized Zirconia and Samaria-Doped Ceria Bilayered Electrolytes”, https://ecsarxiv.org/xhn73/

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Van Brunt, Edward, Anant Agarwal, Al Burk, Lin Cheng, Michael O’Loughlin, John Palmour, and Alexander Suvorov. "A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers." Journal of Electronic Materials 43, no. 4 (October 31, 2013): 809–13. http://dx.doi.org/10.1007/s11664-013-2836-0.

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48

Reshanov, Sergey A., and Gerhard Pensl. "Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC." Materials Science Forum 483-485 (May 2005): 417–20. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.417.

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Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.

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49

Ivanov, Pavel A., Michael E. Levinshtein, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, and Brett A. Hull. "Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process." Materials Science Forum 556-557 (September 2007): 921–24. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.921.

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Forward current-voltage (I-V) characteristics and non-equilibrium carrier lifetime, τ were measured in 4H-SiC pin diodes (10-kV rated, 100 μm base width). The τ value was found to be 3.7 μs at room temperature by measurements of open circuit voltage decay. To the best of the authors' knowledge, the above lifetime value is the highest reported for 4H-SiC. The forward voltage drops were measured to be 3.44 V at current density of 100 A/cm2 and 5.45 V at 1000 A/cm2 showing a very deep modulation of the blocking base by injected carriers. Diodes operated well at elevated temperatures up to 400oC. No essential forward degradation was detected after 300- A×min current stress at 400oC.

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50

Liu, Shuo, Ruiwen Shao, Shaojie Ma, Lei Zhang, Oubo You, Haotian Wu, Yuan Jiang Xiang, Tie Jun Cui, and Shuang Zhang. "Non-Hermitian Skin Effect in a Non-Hermitian Electrical Circuit." Research 2021 (March 15, 2021): 1–9. http://dx.doi.org/10.34133/2021/5608038.

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The conventional bulk-boundary correspondence directly connects the number of topological edge states in a finite system with the topological invariant in the bulk band structure with periodic boundary condition (PBC). However, recent studies show that this principle fails in certain non-Hermitian systems with broken reciprocity, which stems from the non-Hermitian skin effect (NHSE) in the finite system where most of the eigenstates decay exponentially from the system boundary. In this work, we experimentally demonstrate a 1D non-Hermitian topological circuit with broken reciprocity by utilizing the unidirectional coupling feature of the voltage follower module. The topological edge state is observed at the boundary of an open circuit through an impedance spectra measurement between adjacent circuit nodes. We confirm the inapplicability of the conventional bulk-boundary correspondence by comparing the circuit Laplacian between the periodic boundary condition (PBC) and open boundary condition (OBC). Instead, a recently proposed non-Bloch bulk-boundary condition based on a non-Bloch winding number faithfully predicts the number of topological edge states.

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