Relevant bibliographies by topics / Open Circuit Voltage Decay (OCVD)

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Open Circuit Voltage Decay (OCVD)'

Author: Grafiati
Published: 10 March 2023
Last updated: 31 July 2025

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Journal articles on the topic "Open Circuit Voltage Decay (OCVD)"

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Journal, Baghdad Science. "Evaluation of Laser Doping of Si from MCLT Measurement." Baghdad Science Journal 1, no. 2 (2004): 321–25. http://dx.doi.org/10.21123/bsj.1.2.321-325.

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The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.
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Sakata, Isao, and Yutaka Hayashi. "Open-Circuit Voltage Decay (OCVD) Measurement Applied to Hydrogenated Amorphous Silicon Solar Cells." Japanese Journal of Applied Physics 29, Part 2, No. 1 (1990): L27—L29. http://dx.doi.org/10.1143/jjap.29.l27.

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A. K., Azlina, M. H. Mamat, Che Soh, Z. H., et al. "MITRAGYNA SPECIOSA DYE SENSITISER AS THE LIGHT-HARVESTING MOLECULES FOR DYE-SENSITISED SOLAR CELLS." Jurnal Teknologi 85, no. 1 (2022): 107–13. http://dx.doi.org/10.11113/jurnalteknologi.v85.18695.

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In this study, natural dye sensitisers derived from ketum (Mitragyna speciosa-MS), spinach (Spinacia oleracea-SO), curry (Murraya koenigii-MK), papaya (Carica papaya-CP), and henna (Lawsonia inermis-LI) were investigated for dye-sensitised solar cells (DSSCs). Ultraviolet-Visible Spectroscopy (UV-Vis), Fourier Transform Infrared spectroscopy (FTIR), Open-Circuit Voltage Decay (OCVD) and Current to Voltage (I-V) were used to analyse the natural dye and the fabricated DSSC. It was observed that all dye solutions contain the majority of important functional groups of chlorophyll-based sensitisers
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Amri, Khaoula, Rabeb Belghouthi, Michel Aillerie, and Rached Gharbi. "An Open Circuit Voltage Decay System for a Flexible Method for Characterization of Carriers’ Lifetime in Semiconductor." Key Engineering Materials 886 (May 2021): 3–11. http://dx.doi.org/10.4028/www.scientific.net/kem.886.3.

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Among all the material parameters of a semiconductor, the lifetime of the carriers is one of the most complex, as it is a function of the dominant recombination mechanism, the number of carriers, the structural parameters and the temperature. Nevertheless, the lifetime of the carriers is a very useful and fundamental parameter to be determined for the qualification of the semiconductor in order to allow the improvement of the manufacturing process and the optimization of the operation of the semiconductor device. Thus being strongly linked to many physical and electronic parameters, the lifeti
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Dheilly, Nicolas, Dominique Planson, Pierre Brosselard, et al. "Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique." Materials Science Forum 615-617 (March 2009): 703–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.703.

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This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.
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Peng, Wei, Shu Zhen Yang, and Wei Hu. "Variable Rank Differential Smoothing Technique for Electron Lifetime Calculation in Dye-Sensitized Solar Cells." Journal of Nano Research 48 (July 2017): 1–7. http://dx.doi.org/10.4028/www.scientific.net/jnanor.48.1.

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The free electron lifetime is a key factor in determining the performance of a dye-sensitized solar cells (DSCs). Open-circuit voltage-decay (OCVD) suggested by Zaban is a useful technique to provide continuous reading of the electron lifetime as a function of device’s open-circuit voltage (Voc), but the data processing has never been studied in order to get high accuracy electron lifetime value from the high resolution decaying voltage data. In this manuscript, we introduce the variable rank differential smoothing (VRDS) technique in the electron lifetime data processing. We find it can lesse
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Ismail, Raid A., Omar A. Abdulrazzaq, and Abdullah M. Ali. "Photovoltaic properties of ITO/p-Si heterojunction prepared by pulsed laser deposition." International Journal of Modern Physics B 34, no. 32 (2020): 2050321. http://dx.doi.org/10.1142/s021797922050321x.

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In this study, indium tin oxide (ITO) was deposited onto sapphire and low resistive p-Si substrates using pulsed laser deposition (PLD) technique. The optical energy gap of ITO deposited on the sapphire substrate was 3.7 eV at room temperature. Photoluminescence (PL) of ITO shows an emission of broad peak at 524 nm. Photovoltaic (PV) characteristics of the n-ITO/p-Si heterojunction are examined and showed conversion efficiency [Formula: see text] of 1.8%. The open circuit voltage [Formula: see text] for this cell was 0.49 V while the short circuit current density [Formula: see text] was 17.4 m
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Affour, B., and P. Mialhe. "Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity." Active and Passive Electronic Components 19, no. 4 (1997): 225–38. http://dx.doi.org/10.1155/1997/46342.

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The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values ofτand S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. D
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Nipoti, Roberta, Maurizio Puzzanghera, and Giovanna Sozzi. "Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes." Materials Science Forum 897 (May 2017): 439–42. http://dx.doi.org/10.4028/www.scientific.net/msf.897.439.

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The reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×1019 cm-3 against 2×1020 cm-3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes’ ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.
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Sundaresan, Siddarth G., Charles Sturdevant, Madhuri Marripelly, Eric Lieser, and Ranbir Singh. "12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes." Materials Science Forum 717-720 (May 2012): 949–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.949.

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Sharp avalanche breakdown voltages of 12.9 kV are measured on PiN rectifiers fabricated on 100 µm thick, 3 x 1014 cm-3 doped n- epilayers grown on n+ 4H-SiC substrates. This equates to a record high 129 V/µm for a > 10 kV device. Optimized epilayer, device design and processing of the SiC PiN rectifiers result in a > 60% blocking yield at 10 kV, ultra-low on-state voltage drop and differential on-resistance of 3.75 V and 3.3 mΩ-cm2 at 100 A/cm2 respectively. Open circuit voltage decay (OCVD) measured carrier lifetimes in the range of 2-4 µs are obtained at room temperature, which increas
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Dissertations / Theses on the topic "Open Circuit Voltage Decay (OCVD)"

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Torto, Lorenzo. "Development of photocurrent and open circuit voltage decay models for the characterization and reliability study of bulk herejunction solar cells." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422689.

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Le celle solari organiche appartengono al fotovoltaico di terza generazione e i loro punti di forza risiedono nelle loro peculiarità, che le rendono molto adatte a molte applicazioni, come l'integrazione architettonica o l'elettronica indossabile. Nonostante i numerosi vantaggi, soffrono ancora di molti punti deboli. Il più significativo è la scarsa affidabilità, da cui deriva la necessità di studiare nuove procedure di indagine che conducano alla risoluzione dei problemi di affidabilità. Questa attività di ricerca mira a sviluppare una metodologia per la caratterizzazione e lo studio dell'af
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Freda, Albanese Loredana. "Characterization, modeling and simulation of 4H-SiC power diodes." Doctoral thesis, Universita degli studi di Salerno, 2011. http://hdl.handle.net/10556/217.

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2009 - 2010<br>Exploring the attractive electrical properties of the Silicon Carbide (SiC) for power devices, the characterization and the analysis of 4H-SiC pin diodes is the main topic of this Ph.D. document. In particular, the thesis concerns the development of an auto consistent, analytical, physics based model, created for accurately replicating the power diodes behavior, including both on-state and transient conditions. At the present, the fabrication of SiC devices with the given performances is not completely obvious because of the lack of knowledge still existing in the physical
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Lemaire, Antoine. "Mesure par OCVD de la durée de vie des porteurs minoritaires dans des jonctions en GaSb, en GaAs et en Si : simulations et expérimentations." Thesis, Perpignan, 2019. http://www.theses.fr/2019PERP0031.

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Mesurer la durée de vie des porteurs minoritaires est indispensable pour optimiser les cellules PV. La méthode OCVD le permet dans une jonction p-n. C'est une technique relativement simple à mettre en place et peu coûteuse comparée à d'autres largement utilisées comme la PCD ou la TRPL. Cependant elle a rarement été employée pour les matériaux III-V puisque les durées de vie sont généralement très faibles (&lt;1μs). Nous nous intéressons aux semiconducteurs III-V puisqu'ils sont utilisés dans les cellules multijonctions dédiées au CPV. Afin de déterminer la durée de vie dans ces matériaux, le
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Book chapters on the topic "Open Circuit Voltage Decay (OCVD)"

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Tewary, V. K., and S. C. Jain. "Open-Circuit Voltage Decay in Solar Cells." In Advances in Electronics and Electron Physics. Elsevier, 1986. http://dx.doi.org/10.1016/s0065-2539(08)60332-7.

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Conference papers on the topic "Open Circuit Voltage Decay (OCVD)"

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Mansfeld, F., S. H. Lin, and L. Kwiatkowski. "Surface Modification of Stainless Steel by an Electrochemical Method." In CORROSION 1994. NACE International, 1994. https://doi.org/10.5006/c1994-94324.

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Abstract In the alternating voltage passivation process (AVPP) a potential square wave is applied for a certain length of time at a constant dc bias potential. The effects of the process parameters dc bias potential Eo, pulse length P, pulse amplitude A and ratio Ro of the duration of the anodic to the cathodic portion of the pulse on the passive properties of 304 SS have been evaluated using a factorial design experiment. The surface properties have been evaluated by recording anodic polarization curves in 0.1 M H2SO4 from which the critical current density icrit and the passive current densi
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Klotz, F. H., G. Massano, A. Sarno, and L. Zavarese. "Determination and analysis of the performance and degradation of a-Si modules using outdoor, simulator and open-circuit-voltage decay (OCVD) measurements." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105709.

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Bellone, Salvatore, Loredana Freda Albanese, and Gian Domenico Licciardo. "Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes." In 2009 International Semiconductor Conference (CAS 2009). IEEE, 2009. http://dx.doi.org/10.1109/smicnd.2009.5336692.

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Smrity, Manu, and S. R. Dhariwal. "Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5032680.

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Fischer, Mathias, David Kiermasch, Lidon Gil Escrig, Henk J. Bolink, Vladimir Dyakonov, and Kristofer Tvingstedt. "Transient drift‐diffusion simulation of the open circuit voltage decay in ionic perovskite solar cells." In 13th Conference on Hybrid and Organic Photovoltaics. Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.hopv.2021.024.

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Sasaki, S., N. Mitsugi, S. Samata, et al. "Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-4-03.

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Torto, Lorenzo, Andrea Cester, Luigi Passarini, et al. "Open circuit voltage decay as a tool to assess the reliability of organic solar cells: P3HT:PCBM vs. HBG1:PCBM." In 2017 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2017. http://dx.doi.org/10.1109/irps.2017.7936272.

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Diop, Pape, Papa Touty Traore, Papa Monzon Samake, Babou Dione, Fatimata Ba, and Modou Pilor. "Influence of temperature and magnetic field on the transient voltage decay of a silicon solar cell with parallel vertical junction in open circuit." In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC). IEEE, 2022. http://dx.doi.org/10.1109/pvsc48317.2022.9938545.

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Okafor, A. Chukwujekwu, and Hector-Martins Mogbo. "Effects of Gas Flow Rate and Catalyst Loading on Polymer Electrolyte Membrane (PEM) Fuel Cell Performance and Degradation." In ASME 2010 8th International Conference on Fuel Cell Science, Engineering and Technology. ASMEDC, 2010. http://dx.doi.org/10.1115/fuelcell2010-33308.

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In this paper, the effects of gas flow rates, and catalyst loading on polymer electrolyte membrane fuel cell (PEMFC) performance was investigated using a 50cm2 active area fuel cell fixture with serpentine flow field channels machined into poco graphite blocks. Membrane Electrode Assemblies (MEAs) with catalyst and gas flow rates at two levels each (0.5mg/cm2, 1mg/cm2; 0.3L/min, 0.5L/min respectively) were tested at 60°C without humidification. The cell performance was analyzed by taking AC Impedance, TAFEL plot, open circuit voltage, and area specific resistance measurements. It was observed
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Croitoru, N., M. Zafrir, S. Amirhaghi, and Z. Harzion. "Schottky-type photovoltaic junctions with transparent conductor films." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.

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Junctions between transparent conductor (ITO) and single-crystal silicon or polycrystalline silicon (poly-Si) were prepared. Electrical I–V and C-V, as well as photovoltage decay (PVD) measurements, were performed. Data of open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), efficiency (η), built-in potential (ϕ- bl ), and lifetime were obtained. It was found that the lifetime of photogenerated carriers in the poly-Si/ITO junction is much shorter than in single crystal. There are two types of recombination center that have an essential influence on the efficiency of the s
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