Relevant bibliographies by topics / Open Circuit Voltage Decay (OCVD)

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Open Circuit Voltage Decay (OCVD)'

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Published: 10 March 2023

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Journal articles on the topic "Open Circuit Voltage Decay (OCVD)"

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Journal, Baghdad Science. "Evaluation of Laser Doping of Si from MCLT Measurement." Baghdad Science Journal 1, no. 2 (2004): 321–25. http://dx.doi.org/10.21123/bsj.1.2.321-325.

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The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.
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Sakata, Isao, and Yutaka Hayashi. "Open-Circuit Voltage Decay (OCVD) Measurement Applied to Hydrogenated Amorphous Silicon Solar Cells." Japanese Journal of Applied Physics 29, Part 2, No. 1 (1990): L27—L29. http://dx.doi.org/10.1143/jjap.29.l27.

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Amri, Khaoula, Rabeb Belghouthi, Michel Aillerie, and Rached Gharbi. "An Open Circuit Voltage Decay System for a Flexible Method for Characterization of Carriers’ Lifetime in Semiconductor." Key Engineering Materials 886 (May 2021): 3–11. http://dx.doi.org/10.4028/www.scientific.net/kem.886.3.

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Among all the material parameters of a semiconductor, the lifetime of the carriers is one of the most complex, as it is a function of the dominant recombination mechanism, the number of carriers, the structural parameters and the temperature. Nevertheless, the lifetime of the carriers is a very useful and fundamental parameter to be determined for the qualification of the semiconductor in order to allow the improvement of the manufacturing process and the optimization of the operation of the semiconductor device. Thus being strongly linked to many physical and electronic parameters, the lifetime of the carriers cannot be provided only with a theoretical average value and an experimental measured value must be obtained. In the case of semiconductor junctions, precise measurements of the open-circuit voltage decay, OCVD, make it possible to trace the lifetime of the carriers through the device. An automated method for OCVD measurements presented in this contribution overcomes the main limitations that arise in the standard method when used for the characterization of the lifetime of carriers as it achieves the "open circuit conditions" of the device under test and reduces inherent noise of the differential operation mode of the method.
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A. K., Azlina, M. H. Mamat, Che Soh, Z. H., et al. "MITRAGYNA SPECIOSA DYE SENSITISER AS THE LIGHT-HARVESTING MOLECULES FOR DYE-SENSITISED SOLAR CELLS." Jurnal Teknologi 85, no. 1 (2022): 107–13. http://dx.doi.org/10.11113/jurnalteknologi.v85.18695.

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In this study, natural dye sensitisers derived from ketum (Mitragyna speciosa-MS), spinach (Spinacia oleracea-SO), curry (Murraya koenigii-MK), papaya (Carica papaya-CP), and henna (Lawsonia inermis-LI) were investigated for dye-sensitised solar cells (DSSCs). Ultraviolet-Visible Spectroscopy (UV-Vis), Fourier Transform Infrared spectroscopy (FTIR), Open-Circuit Voltage Decay (OCVD) and Current to Voltage (I-V) were used to analyse the natural dye and the fabricated DSSC. It was observed that all dye solutions contain the majority of important functional groups of chlorophyll-based sensitisers, which is crucial for the dye-to-TiO2 (Titanium (II) Oxide) attachment, making them suitable sources of energy harvesting pigments. In this regard, the dye pH and chemical bonding of the respective dyes play a significant role that contribute to the overall performance of the DSSCs. It was discovered that a dye based on MK provided the best DSSC performance. This is because MK-based dye has higher content of functional groups, an optimal pH, and the slowest properties of back electron recombination among the OCVD measurements. Because of the combination of these properties, the open-circuit voltage (VOC), short-circuit current density (JSC), and power conversion efficiency (PCE) values have been determined to be 0.58 V, 2.48 mA/cm2, and 0.47%, respectively.
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Dheilly, Nicolas, Dominique Planson, Pierre Brosselard, et al. "Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique." Materials Science Forum 615-617 (March 2009): 703–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.703.

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This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.
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Peng, Wei, Shu Zhen Yang, and Wei Hu. "Variable Rank Differential Smoothing Technique for Electron Lifetime Calculation in Dye-Sensitized Solar Cells." Journal of Nano Research 48 (July 2017): 1–7. http://dx.doi.org/10.4028/www.scientific.net/jnanor.48.1.

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The free electron lifetime is a key factor in determining the performance of a dye-sensitized solar cells (DSCs). Open-circuit voltage-decay (OCVD) suggested by Zaban is a useful technique to provide continuous reading of the electron lifetime as a function of device’s open-circuit voltage (Voc), but the data processing has never been studied in order to get high accuracy electron lifetime value from the high resolution decaying voltage data. In this manuscript, we introduce the variable rank differential smoothing (VRDS) technique in the electron lifetime data processing. We find it can lessen data loss and give highly accurate electron lifetime value in the range of Voc decaying. We also get the effective recombination order values based on the VRDS technique, which indicate different potential processes due the two different values. These results show the detail kinetics information and microscopic device physic characteristics, which are very important to understand the device working mechanism and meaningful for realizing higher performance solar cells.
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Ismail, Raid A., Omar A. Abdulrazzaq, and Abdullah M. Ali. "Photovoltaic properties of ITO/p-Si heterojunction prepared by pulsed laser deposition." International Journal of Modern Physics B 34, no. 32 (2020): 2050321. http://dx.doi.org/10.1142/s021797922050321x.

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In this study, indium tin oxide (ITO) was deposited onto sapphire and low resistive p-Si substrates using pulsed laser deposition (PLD) technique. The optical energy gap of ITO deposited on the sapphire substrate was 3.7 eV at room temperature. Photoluminescence (PL) of ITO shows an emission of broad peak at 524 nm. Photovoltaic (PV) characteristics of the n-ITO/p-Si heterojunction are examined and showed conversion efficiency [Formula: see text] of 1.8%. The open circuit voltage [Formula: see text] for this cell was 0.49 V while the short circuit current density [Formula: see text] was 17.4 mA/cm2. The fill factor of this cell was 22%. The ideality factor of ITO/Si heterojunction is about 3.1. The barrier height [Formula: see text] of the heterojunction was determined from I–V characteristics and was 0.83 eV. The responsivity of the heterojunction was measured and the maximum value of responsivity was 0.5 A/W without bias voltage. The minority carrier lifetime of the solar was measured using open circuit voltage decay (OCVD) method and found to be 227 [Formula: see text]s.
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Affour, B., and P. Mialhe. "Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity." Active and Passive Electronic Components 19, no. 4 (1997): 225–38. http://dx.doi.org/10.1155/1997/46342.

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The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values ofτand S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. Deviations in lifetime values remain lower than 7% for almost all the cell configurations while recombination velocity deviations are shown to be dependent on cell structure parameters and experimental procedure.
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Nipoti, Roberta, Maurizio Puzzanghera, and Giovanna Sozzi. "Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes." Materials Science Forum 897 (May 2017): 439–42. http://dx.doi.org/10.4028/www.scientific.net/msf.897.439.

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The reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×1019 cm-3 against 2×1020 cm-3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes’ ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.
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Sundaresan, Siddarth G., Charles Sturdevant, Madhuri Marripelly, Eric Lieser, and Ranbir Singh. "12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes." Materials Science Forum 717-720 (May 2012): 949–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.949.

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Sharp avalanche breakdown voltages of 12.9 kV are measured on PiN rectifiers fabricated on 100 µm thick, 3 x 1014 cm-3 doped n- epilayers grown on n+ 4H-SiC substrates. This equates to a record high 129 V/µm for a > 10 kV device. Optimized epilayer, device design and processing of the SiC PiN rectifiers result in a > 60% blocking yield at 10 kV, ultra-low on-state voltage drop and differential on-resistance of 3.75 V and 3.3 mΩ-cm2 at 100 A/cm2 respectively. Open circuit voltage decay (OCVD) measured carrier lifetimes in the range of 2-4 µs are obtained at room temperature, which increase to a record high 14 µs at 225 °C. Excellent stability of the forward bias characteristics within 10 mV is observed for a long-term forward biasing of the PiN rectifiers at 100 A/cm2. A PiN rectifier module consisting of five parallel large area 6.4 mm x 6.4 mm 10 kV PiN rectifiers is connected as a free-wheeling diode with a Si IGBT and 1100 V/100 A switching transients are recorded. Data on the current sharing capability of the PiN rectifiers is also presented.
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Dissertations / Theses on the topic "Open Circuit Voltage Decay (OCVD)"

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Torto, Lorenzo. "Development of photocurrent and open circuit voltage decay models for the characterization and reliability study of bulk herejunction solar cells." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422689.

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Le celle solari organiche appartengono al fotovoltaico di terza generazione e i loro punti di forza risiedono nelle loro peculiarità, che le rendono molto adatte a molte applicazioni, come l'integrazione architettonica o l'elettronica indossabile. Nonostante i numerosi vantaggi, soffrono ancora di molti punti deboli. Il più significativo è la scarsa affidabilità, da cui deriva la necessità di studiare nuove procedure di indagine che conducano alla risoluzione dei problemi di affidabilità. Questa attività di ricerca mira a sviluppare una metodologia per la caratterizzazione e lo studio dell'affidabilità delle celle solari polimeriche. In particolare, sono qui sviluppati due modelli, insieme alla descrizione di una nuova tipologia di misura: la open circuit voltage decay (OCVD). Il primo modello si basa sull'analisi della fotocorrente prodotta da una cella solare organica e prende in considerazione il piegamento della banda elettronica vicino agli elettrodi causata da un accumulo di carica nell’active layer. Questi accumuli di carica hanno un forte impatto sulla fotocorrente prodotta dal dispositivo. Inoltre, il modello spiega diverse discrepanze che sorgono tra i risultati sperimentali e la predizione fatta da altri modelli precedentemente presentati in letteratura. Il secondo modello si basa sull'analisi delle OCVD (ovvero una misura non distruttiva per la cella solare che monitora il transitorio di decadimento della tensione di circuito aperto a partire dal momento in cui la luce sulla cella solare viene spenta). È dimostrato che la forma del transitorio del decadimento della tensione è correlata ai meccanismi di separazione e ricombinazione dei portatori liberi. Molti parametri che descrivono le celle solari polimeriche sono estrapolate dal modello: i tassi di ricombinazione, il numero di portatori intrinseci nell’active layer e il gap energetico dei materiali che compongono lo strato attivo. Al fine di migliorare il fit e l’estrapolazione dei parametri, nel modello OCVD viene aggiunta la considerazione della distribuzione di carica spaziale non costante all'interno dell’active layer. L'analisi è supportata da alcune simulazioni drift diffusion. Ciò consente di quantificare la carica accumulata sulle interfacce elettrodo/organico, ottenendo ulteriori informazioni sulla struttura della banda elettronica della cella solare, e in particolare sull'allineamento tra le funzioni lavoro dell'elettrodo e le bande di trasporto organiche. La seconda parte del lavoro fa uso dei modelli sviluppati nella prima parte. In particolare, sono applicati a dati sperimentali ottenuti da dispositivi solari. I modelli vengono applicati a due casi principali. Nel primo caso, i due modelli sono utilizzati per caratterizzare quattro tipi di celle solari, evidenziando le differenze tra i dispositivi. Nello specifico, vengono estrapolate diverse informazioni sui meccanismi di ricombinazione all'interno dello strato attivo e sul diagramma a bande dell’active layer. Inoltre, viene identificata l'origine delle prestazioni inferiori associate ad alcuni dispositivi rispetto ad altri, mostrando il motivo per cui alcuni dispositivi non si guastano durante stress elettrici. Inoltre, le misurazioni in temperatura consentono di estrapolare il diagramma a bande dei materiali che compongono le celle solari. Nel secondo caso, i modelli vengono utilizzati per monitorare alcune celle durante i test di vita accelerati, mostrando i principali fattori causa di degradazione. Lo stress elettrico danneggia solo lo strato attivo riducendo la velocità di generazione dei polaroni e la probabilità di separazione dei polaron. Dall'analisi della forma della curva di fotocorrente è stato anche osservato che lo stress termico degrada anche l'interfaccia con l'anodo.
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Freda, Albanese Loredana. "Characterization, modeling and simulation of 4H-SiC power diodes." Doctoral thesis, Universita degli studi di Salerno, 2011. http://hdl.handle.net/10556/217.

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2009 - 2010<br>Exploring the attractive electrical properties of the Silicon Carbide (SiC) for power devices, the characterization and the analysis of 4H-SiC pin diodes is the main topic of this Ph.D. document. In particular, the thesis concerns the development of an auto consistent, analytical, physics based model, created for accurately replicating the power diodes behavior, including both on-state and transient conditions. At the present, the fabrication of SiC devices with the given performances is not completely obvious because of the lack of knowledge still existing in the physical properties of the material, especially of those related to carrier transport and of their dependences on process parameters. Among these, one can cite the degree of doping activation, the carrier lifetime into epitaxial layers that will be employed and the sensitivity of some physical parameters to temperature changes. Therefore, a set of investigative tools, designed especially for SiC devices, cannot be regarded as secondary objective. It will be useful both for process monitoring, becoming essential to the tuning of technological processes used for the implementation of the final devices, and for a proper diagnostics of the realized devices. Following this need, in our research activity firstly a predictive, static analytical model, including temperature dependence, is developed. It is able to explain the carrier transport in diffused regions as function of the injection level and turns also useful for better understanding the influence of physical parameters, which depend in a significant way from the processed material, on device performances. The model solves the continuity equation in double carrier conditions, taking into account the effects due to varying doping profile of the junction, the spatial dependence of physical parameters on both doping and injection level and the modification of the electric field of the region with the injection regime. The model includes also the device characterization at high temperatures to analyze the influence of thermal issues on the overall behavior up to temperature of 250°C. The accuracy of the static model has been extensively demonstrated by numerous comparisons with numerical results obtained by the SILVACO commercial simulator. Secondly, with the aim to properly account for the dynamic electrical behavior of a diode with generic structure, the static model has been incorporated in a more general, self-consistent model, allowing the analysis of the device behavior when it is switched from an arbitrary forward-bias condition. In particular, the attention is focused on an abrupt variation of diode voltage due to an instantaneous interruption of the conduction current: although this situation is notably interesting for the study of the switching behavior of diodes, the voltage transitory is also traditionally used in different techniques of investigation to extract more information about the mean carrier lifetime. This occurs, for example, in the conventional Open Circuit Voltage Decay (OCVD) technique, where the voltage decay due to the current interruption is useful for an indirect measure of minority carrier lifetime in the epitaxial layer. Because of its heavy dependence on processes, the carrier lifetime is an important parameter to be monitored, especially in the case of bipolar devices, and it cannot be neglected. Due to the existent uncertainty about this parameter in SiC epi-layers, the OCVD method reveals itself a practical way to overcoming this limit. In detail, by using our self-consistent model, that exploits an improved method of the traditional OCVD technique, it is possible to characterize the carrier lifetime into 4H-SiC epitaxial layer of a generic diode under test, obtaining the spatial distributions of the minority carrier concentration and carrier lifetime at any injection regime. The overall model performances are compared to both device simulations and experimental results performed on Si and 4H-SiC rectifier structures with various physical and electrical characteristics. From the comparisons, the model results to have good predictive capabilities for describing the spatial–temporal variation of carriers and currents along the whole epi-layer, proving contextually the validity of the used approximations and allowing also to resolve some ambiguities reported in the literature, such as the stated inapplicability of the OCVD method on thick epitaxial layers, the reasons of the observed non linear decay of the voltage with time, and the effects of junction properties on voltage transient. Finally, with the imposition of right boundary conditions, it is possible to use the versatility of the developed model for extending the analysis and obtaining a physical insight of any arbitrary switching condition of 4H-SiC power diodes. [edited by author]<br>IX n.s.
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Lemaire, Antoine. "Mesure par OCVD de la durée de vie des porteurs minoritaires dans des jonctions en GaSb, en GaAs et en Si : simulations et expérimentations." Thesis, Perpignan, 2019. http://www.theses.fr/2019PERP0031.

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Mesurer la durée de vie des porteurs minoritaires est indispensable pour optimiser les cellules PV. La méthode OCVD le permet dans une jonction p-n. C'est une technique relativement simple à mettre en place et peu coûteuse comparée à d'autres largement utilisées comme la PCD ou la TRPL. Cependant elle a rarement été employée pour les matériaux III-V puisque les durées de vie sont généralement très faibles (&lt;1μs). Nous nous intéressons aux semiconducteurs III-V puisqu'ils sont utilisés dans les cellules multijonctions dédiées au CPV. Afin de déterminer la durée de vie dans ces matériaux, le signal OCVD doit être modélisé. Pour ce faire, nous avons tout d'abord utilisé la simulation TCAD pour étudier l'influence du design (épaisseur du bulk et dopage de l'émetteur) de jonctions p-n en silicium et en GaAs sur le signal OCVD. Nous avons travaillé sur l'extraction de la durée de vie dans une région spécifique : le bulk. Parallèlement nous avons caractérisé des diodes en GaSb et en GaAs. À l'aide de la simulation TCAD, nous avons ajusté les courbes expérimentales I-V et OCVD. Ceci nous a permis de mettre en évidence l'importance de la diode anti-retour dans le circuit OCVD. Son temps de blocage doit être inférieur à la durée de vie à mesurer. Enfin, nous avons développé, sur la base du modèle équivalent à une diode en régime transitoire, un modèle sous Python. Il permet de simuler le signal OCVD puis d'ajuster une courbe expérimentale à partir de plusieurs variables d'ajustement (τOCVD, Nl et Rsh). Ce modèle permet également d'examiner l'influence de ces grandeurs sur le signal OCVD et donc d'appréhender davantage le comportement de la mesure<br>Minority carrier lifetime measurement is essential to optimize PV solar cells. The OCVD method allows it into p-n junction. Compare to other technics widely used like PCD or TRPL, it is really simple and cheap. However it has been scarcely used for III-V materials mainly due to their low lifetime (&lt;1μs). We focus on III-V semiconductors because they are good candidates to multijunction solar cells dedicated to CPV. Nevertheless, the OCVD signal must be simulated in order to extract lifetime in these materials. Therefore, we first used TCAD simulation to study design influence (bulk thickness and emitter doping) of silicon and GaAs p-n junctions on OCVD signal. We examined lifetime extraction in a specific region: the bulk. In parallel, we characterized GaSb and GaAs diodes. Experimental I-V and OCVD curves of GaSb p-n junctions have been fitted by TCAD simulation. It allowed to highlight the blocking diode is of major importance. Its blocking time has to be shorter than measured lifetime. Finally, we developed a model under Python based on transient single-diode model. It enables first to simulate OCVD signal, then to fit experimental curve with several fitting variables (τOCVD, Nl et Rsh). This modelling allowed to study further the variable influences on the signal and thus improved our knowledge on OCVD behaviour
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Book chapters on the topic "Open Circuit Voltage Decay (OCVD)"

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Tewary, V. K., and S. C. Jain. "Open-Circuit Voltage Decay in Solar Cells." In Advances in Electronics and Electron Physics. Elsevier, 1986. http://dx.doi.org/10.1016/s0065-2539(08)60332-7.

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Conference papers on the topic "Open Circuit Voltage Decay (OCVD)"

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Klotz, F. H., G. Massano, A. Sarno, and L. Zavarese. "Determination and analysis of the performance and degradation of a-Si modules using outdoor, simulator and open-circuit-voltage decay (OCVD) measurements." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105709.

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Bellone, Salvatore, Loredana Freda Albanese, and Gian Domenico Licciardo. "Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes." In 2009 International Semiconductor Conference (CAS 2009). IEEE, 2009. http://dx.doi.org/10.1109/smicnd.2009.5336692.

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Smrity, Manu, and S. R. Dhariwal. "Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5032680.

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Fischer, Mathias, David Kiermasch, Lidon Gil Escrig, Henk J. Bolink, Vladimir Dyakonov, and Kristofer Tvingstedt. "Transient drift‐diffusion simulation of the open circuit voltage decay in ionic perovskite solar cells." In 13th Conference on Hybrid and Organic Photovoltaics. Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.hopv.2021.024.

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Sasaki, S., N. Mitsugi, S. Samata, et al. "Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-4-03.

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Torto, Lorenzo, Andrea Cester, Luigi Passarini, et al. "Open circuit voltage decay as a tool to assess the reliability of organic solar cells: P3HT:PCBM vs. HBG1:PCBM." In 2017 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2017. http://dx.doi.org/10.1109/irps.2017.7936272.

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Diop, Pape, Papa Touty Traore, Papa Monzon Samake, Babou Dione, Fatimata Ba, and Modou Pilor. "Influence of temperature and magnetic field on the transient voltage decay of a silicon solar cell with parallel vertical junction in open circuit." In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC). IEEE, 2022. http://dx.doi.org/10.1109/pvsc48317.2022.9938545.

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Okafor, A. Chukwujekwu, and Hector-Martins Mogbo. "Effects of Gas Flow Rate and Catalyst Loading on Polymer Electrolyte Membrane (PEM) Fuel Cell Performance and Degradation." In ASME 2010 8th International Conference on Fuel Cell Science, Engineering and Technology. ASMEDC, 2010. http://dx.doi.org/10.1115/fuelcell2010-33308.

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In this paper, the effects of gas flow rates, and catalyst loading on polymer electrolyte membrane fuel cell (PEMFC) performance was investigated using a 50cm2 active area fuel cell fixture with serpentine flow field channels machined into poco graphite blocks. Membrane Electrode Assemblies (MEAs) with catalyst and gas flow rates at two levels each (0.5mg/cm2, 1mg/cm2; 0.3L/min, 0.5L/min respectively) were tested at 60°C without humidification. The cell performance was analyzed by taking AC Impedance, TAFEL plot, open circuit voltage, and area specific resistance measurements. It was observed that MEAs with lower gas flow rate had lesser cell resistance compared to MEAs with a higher gas flow rate. TAFEL plot shows the highest exchange current density value of −2.05 mAcm2 for MEA with 0.5mg/cm2 catalyst loading operated at reactant gas flow rate of 0.3L/min signifying it had the least activation loss and fastest reaction rate. Open circuit voltage curve shows a higher output voltage and lesser voltage decay rate for MEAs tested at higher gas flow rates.
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Croitoru, N., M. Zafrir, S. Amirhaghi, and Z. Harzion. "Schottky-type photovoltaic junctions with transparent conductor films." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.

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Junctions between transparent conductor (ITO) and single-crystal silicon or polycrystalline silicon (poly-Si) were prepared. Electrical I–V and C-V, as well as photovoltage decay (PVD) measurements, were performed. Data of open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), efficiency (η), built-in potential (ϕ- bl ), and lifetime were obtained. It was found that the lifetime of photogenerated carriers in the poly-Si/ITO junction is much shorter than in single crystal. There are two types of recombination center that have an essential influence on the efficiency of the solar cells; those at the contact between ITO and the silicon; and those due to the grain boundaries (GB) between the crystallites in poly-Si. The solar cells were annealed, either by heating them in vacuum or by irradiation with the light of a Cd–Ne laser (441.6 nm). The annealing reduced the influence of the recombination centers at the contact, whereas those at the GB were not affected. Passivation of GB with iodine improved the characteristics of the solar cells. This improvement is attributed to the reduction of the recombination centers at GB. The influence of the annealing and passivation on the lifetime of this type of cell was studied by measuring PVD.
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