Relevant bibliographies by topics / Nondegenerate semiconductors

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Nondegenerate semiconductors'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Nondegenerate semiconductors"

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Sheik-Bahae, M., J. Wang, and E. W. Van Stryland. "Nondegenerate optical Kerr effect in semiconductors." IEEE Journal of Quantum Electronics 30, no. 2 (1994): 249–55. http://dx.doi.org/10.1109/3.283767.

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Min, H. S. "Steady‐state Nyquist theorem for nondegenerate semiconductors." Journal of Applied Physics 64, no. 11 (December 1988): 6339–44. http://dx.doi.org/10.1063/1.342096.

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Zhao, Peng, Matthew Reichert, David J. Hagan, and Eric W. Van Stryland. "Dispersion of nondegenerate nonlinear refraction in semiconductors." Optics Express 24, no. 22 (October 17, 2016): 24907. http://dx.doi.org/10.1364/oe.24.024907.

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Ruvinskii, M. A., O. B. Kostyuk, and B. M. Ruvinskii. "The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire." Фізика і хімія твердого тіла 17, no. 1 (March 15, 2016): 7–10. http://dx.doi.org/10.15330/pcss.17.1.7-10.

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It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.
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FUCHS, F., and F. POUPAUD. "ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 05, no. 08 (December 1995): 1093–111. http://dx.doi.org/10.1142/s0218202595000577.

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A current approximation for modeling electron transport in semiconductor devices is to assume small electron density. Through this method nondegenerate models are obtained. Here we present an asymptotical analysis of that approximation on the drift-diffusion equation. The numerical approximations of the degenerate and nondegenerate equations are then compared. A modified Scharfetter-Gummel scheme which integrates the degenerate drift-diffusion equation is proposed for comparison.
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JÜNGEL, ANSGAR. "ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 04, no. 05 (October 1994): 677–703. http://dx.doi.org/10.1142/s0218202594000388.

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We analyze the degenerate transient multi-dimensional quasi-hydrodynamic model for semiconductors with general recombination rate. We present existence results for general nonlinear diffusivities for the nondegenerate and the degenerate Dirichlet-Neumann mixed boundary value problem. Uniqueness of solutions of the nondegenerate system can be proved in the Dirichlet boundary case. Concerning the degenerate problem uniqueness can only be shown under some conditions on the initial and boundary data or on the electric field.
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Min, H. S. "A unified theory of noise in nondegenerate semiconductors." Journal of Applied Physics 61, no. 9 (May 1987): 4549–65. http://dx.doi.org/10.1063/1.338389.

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Combescot, Monique, and Roland Combescot. "Comment on ‘‘Electron-electron scattering in nondegenerate semiconductors’’." Physical Review Letters 59, no. 3 (July 20, 1987): 375. http://dx.doi.org/10.1103/physrevlett.59.375.

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Hutchings, D. C., and E. W. Van Stryland. "Nondegenerate two-photon absorption in zinc blende semiconductors." Journal of the Optical Society of America B 9, no. 11 (November 1, 1992): 2065. http://dx.doi.org/10.1364/josab.9.002065.

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Reggiani, Lino, Paolo Lugli, and A. P. Jauho. "Quantum kinetic equation for electronic transport in nondegenerate semiconductors." Physical Review B 36, no. 12 (October 15, 1987): 6602–8. http://dx.doi.org/10.1103/physrevb.36.6602.

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Dissertations / Theses on the topic "Nondegenerate semiconductors"

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Marchetti, Gionni. "The role of electron-electron scattering in spin transport for a GaAs semiconductor in the nondegenerate regime." Thesis, University of York, 2013. http://etheses.whiterose.ac.uk/5134/.

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Hsu, Woan-Jen, and 徐婉禎. "Generation of Squeezed States by Nondegenerate Four-Wave Mixing in Direct Band-Gap Semiconductors." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/03779535127910379935.

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Abstract:
碩士
國立交通大學
物理研究所
84
In this dissertation I present theoretically a mechanism for the generation of squeezed states of light, which is based on the nonlinear optical responses of the condensed exciton system in a finitesize semiconductor sample. Starting with an effective Hamiltonian for the quantized cavity modes and the excitons and using the quantum theory of multiwave mixing, we derive formulas for the variances of intracavity squeezed states generated by nondegenerate four-wave mixing. Spectral analysis of the cavity output light is also studied for various side-mode/pump beat frequencies.
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Book chapters on the topic "Nondegenerate semiconductors"

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Wu, C. C. "Influence of the Velocity Operator on Magnetoresistances in Nondegenerate Semiconductors." In Phonon Scattering in Condensed Matter V, 103–5. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82912-3_31.

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Seeger, Karlheinz. "Charge and Energy Transport in a Nondegenerate Electron Gas." In Semiconductor Physics, 47–119. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03797-3_4.

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Paul, A. E., M. Lindberg, S. An, M. Sargent, and S. W. Koch. "Quantum Theory of Nondegenerate Four-Wave Mixing in Semiconductor Media." In Coherence and Quantum Optics VI, 877–81. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0847-8_159.

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Jena, Debdeep. "Perturbations to the Electron’s Freedom." In Quantum Physics of Semiconductor Materials and Devices, 135–52. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198856849.003.0007.

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Abstract This chapter develops a matrix approach to perturbation theory to explain how to • Use simplifications of non-degenerate energy eigenvalue systems to develop non-matrix based, algebraic results of perturbation theory. • Become comfortable with the analytical Rayleigh-Schrodinger and Brillouin-Wigner nondegenerate perturbation theory results, and learn when to apply them. • Appreciate that the matrix version of perturbation theory is always applicable, both for degenerate and non-degenerate problems by applying it to examples in preparation of its use in semiconductors.
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McBranch, D. W., and M. B. Sinclair. "ULTRAFAST PHOTOINDUCED ABSORPTION IN NONDEGENERATE GROUND-STATE CONJUGATED POLYMERS: SIGNATURES OF EXCITED STATES." In Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model, 587–621. WORLD SCIENTIFIC, 1998. http://dx.doi.org/10.1142/9789814447201_0020.

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Conference papers on the topic "Nondegenerate semiconductors"

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Allan, Gary R., Edesly J. Canto-Said, Eric C. Fox, and Henry M. van Driel. "Nondegenerate two-photon absorption in CdS." In Semiconductors '92, edited by Robert R. Alfano. SPIE, 1992. http://dx.doi.org/10.1117/12.137680.

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Zhao, Peng, Matthew Reichert, David J. Hagan, and Eric W. Van Stryland. "Nondegenerate Nonlinear Refraction in Semiconductors." In Frontiers in Optics. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/fio.2016.jth2a.26.

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Van Stryland, Eric W., and David Hagan. "Extremely Nondegenerate Nonlinear Responses of Semiconductors." In Latin America Optics and Photonics Conference. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/laop.2016.lw2a.1.

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Van Stryland, Eric W., and David J. Hagan. "Extremely Nondegenerate Third-Order Nonlinearities in Semiconductors." In International Conference on Fibre Optics and Photonics. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/photonics.2016.tu1a.3.

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J. Hagan, David, Himansu S. Pattanaik, Peng Zhao, Matthew Reichert, and Eric W. Van Stryland. "Extremely Nondegenerate Two-photon Processes in Semiconductors." In 5th International Conference on Photonics, Optics and Laser Technology. SCITEPRESS - Science and Technology Publications, 2017. http://dx.doi.org/10.5220/0006104700650069.

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Reichert, Matthew, Peng Zhao, Himansu S. Pattanaik, David J. Hagan, and Eric W. Van Stryland. "Nondegenerate two- and three-photon nonlinearities in semiconductors." In SPIE Defense + Security, edited by Michael K. Rafailov and Eric Mazur. SPIE, 2016. http://dx.doi.org/10.1117/12.2223286.

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Zhao, Peng, David J. Hagan, and Eric W. Van Stryland. "Dispersion of extremely nondegenerate nonlinear refraction in semiconductors." In 2017 IEEE Photonics Conference (IPC). IEEE, 2017. http://dx.doi.org/10.1109/ipcon.2017.8116291.

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Zhao, Peng, David Hagan, and Eric Van Stryland. "Extremely nondegenerate nonlinear refraction and dispersion in semiconductors (Conference Presentation)." In Ultrafast Bandgap Photonics III, edited by Michael K. Rafailov. SPIE, 2018. http://dx.doi.org/10.1117/12.2304820.

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Hagan, David J., Matthew C. Reichert, Peng Zhao, Himansu S. Pattanaik, and Eric W. Van Stryland. "Nondegenerate nonlinear refraction, absorption, and gain in semiconductors (Conference Presentation)." In Ultrafast Bandgap Photonics II, edited by Michael K. Rafailov. SPIE, 2017. http://dx.doi.org/10.1117/12.2263280.

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Sheik-Bahae, M., J. Wang, D. C. Hutchings, J. R. DeSalvo, A. A. Said, D. J. Hagan, and E. W. Van Stryland. "Measurement and theory of nondegenerate bound electronic nonlinearities in semiconductors." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mff6.

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We recently obtained the dispersion and band-gap scaling of the bound electronic Kerr effect (n2) from a nonlinear Kramers-Kronig transformation of the nondegenerate nonlinear absorption spectrum calculated including the AC Stark, electronic Raman, and two-photon absorption effect.1 The results for the degenerate case gave excellent agreement with the experimental results of semiconductors as well as large gap dielectrics.2 We have extended this formalism to obtain a general expression for the nondegenerate n2(ω1; ω2) and 2PA coefficient β(ω1; ω2). This allows us to calculated the change of refractive index (Δn) and absorption (Δα) at a probing frequency ω1, due to the presence of a pump beam at ω2 < ω g . Experiments were performed using a excite-probe (two-color) Z-scan technique.2,3 Picosecond pulses from a mode-locked Nd:YAG laser at λ2 = 1.06 μm were used as the pump beam while the second harmonic of these pulses at λ1 = 0.532 μm probed the induced nonlinearities in two-color Z-scan geometry. Here the pump beam induces a Kerr lens in the sample, which changes the transmittance of the probe beam as transmitted through an aperture in the far field. This change is a strong function Z position (along the propagation distance) of the sample.
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